CN103756573A - Low-scratch diamond grinding fluid - Google Patents
Low-scratch diamond grinding fluid Download PDFInfo
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- CN103756573A CN103756573A CN201410032237.8A CN201410032237A CN103756573A CN 103756573 A CN103756573 A CN 103756573A CN 201410032237 A CN201410032237 A CN 201410032237A CN 103756573 A CN103756573 A CN 103756573A
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- Prior art keywords
- diamond grinding
- low
- grinding liquid
- liquid
- polishing
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- 238000000227 grinding Methods 0.000 title claims abstract description 43
- 239000010432 diamond Substances 0.000 title claims abstract description 39
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 39
- 239000012530 fluid Substances 0.000 title abstract description 14
- 239000000314 lubricant Substances 0.000 claims abstract description 7
- 150000001335 aliphatic alkanes Chemical class 0.000 claims abstract description 6
- 239000013008 thixotropic agent Substances 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims description 61
- 239000002245 particle Substances 0.000 claims description 11
- 239000006185 dispersion Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- -1 polyoxyethylene Polymers 0.000 claims description 10
- 239000013543 active substance Substances 0.000 claims description 5
- 239000003002 pH adjusting agent Substances 0.000 claims description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 4
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims description 4
- IIYFAKIEWZDVMP-UHFFFAOYSA-N tridecane Chemical compound CCCCCCCCCCCCC IIYFAKIEWZDVMP-UHFFFAOYSA-N 0.000 claims description 4
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims description 3
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims description 2
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 2
- 150000003014 phosphoric acid esters Chemical class 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 229920002545 silicone oil Polymers 0.000 claims description 2
- 229960004418 trolamine Drugs 0.000 claims description 2
- 238000005498 polishing Methods 0.000 abstract description 34
- 239000013078 crystal Substances 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 239000010437 gem Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 2
- 239000000919 ceramic Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 229910001751 gemstone Inorganic materials 0.000 description 3
- 239000012669 liquid formulation Substances 0.000 description 3
- 239000002113 nanodiamond Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000010775 animal oil Substances 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005474 detonation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005189 flocculation Methods 0.000 description 1
- 230000016615 flocculation Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 235000019198 oils Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000375 suspending agent Substances 0.000 description 1
- 235000015112 vegetable and seed oil Nutrition 0.000 description 1
- 239000008158 vegetable oil Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides low-scratch diamond grinding fluid. The low-scratch diamond grinding fluid is prepared by mixing the following components by weight percent: 78-83% of alkane, 1-5% of dispersing thixotropic agent, 9-11% of surfactant, 2-5% of lubricating agent, 2-5% of pH regulator and 0.1-1% of diamond micropowder. The low-scratch diamond grinding fluid has the beneficial effects that the low-scratch diamond grinding fluid can reduce scratches under the condition of the same grinding material grain size, effectively improve the roughness of a chip surface, reduce the product processing procedures and reduce the processing cost, and can be widely used for grinding and polishing LED (light emitting diode) chips, LED display screens, optical crystals, silicon wafers, compound crystals, liquid crystal display panels, gems, ceramics, germanium wafers, metal workpieces and the like.
Description
Technical field
The present invention relates to a kind of lapping liquid, particularly, relate to a kind of low scuffing diamond grinding liquid.
Background technology
In semiconductor fabrication processes, initial semiconductor chip need to carry out polishing, polishing process adopts lapping liquid to carry out conventionally, lapping liquid is scattered in medium by abrasive particle and is prepared from, be a kind of abrasive product with excellent chemical mechanical property, can be used for the grinding and polishing of silicon chip, compound crystal, precision optics, liquid crystal panel, jewel, metal works etc.Abrasive particle is the key factor of lapping liquid mechanical effect, and different sorts, varigrained abrasive particle ground effect difference, be suitable for different processing requests.Abrasive hardness is higher in general, particle is larger, and its grinding efficiency is higher, processed surface smoothness is lower; Contrary abrasive hardness is lower, particle is less, and its grinding efficiency is lower, processed surface smoothness is higher.
The addition of lapping liquid decides according to water quality and generation cutting swarf, the hard cutting output of water quality is many, the addition of lapping liquid should be some more, after lapping liquid splashes on a small quantity and is stirred evenly by water in cylinder, when polishing, can stick to the surface of part and abrasive material, its effect is as follows: 1. ramollescence: i.e. the chemical action to metal oxide film surface, makes it softening, be easy to remove from surface grinding, to improve mill efficiency; 2. lubrication: as grinding lubricating oil, lubricate between grinding block and metal parts, thus obtain bright and clean surface; 3. cleaning function: as washing composition, can remove the greasy dirt on metal parts surface; 4. rust inhibition: the part after attrition process, does not have certain rust inhibition before not cleaning at short notice; 5. shock absorption: in polishing processing running, stir together with water, can alleviate the mutual shock between part.
Lapping liquid is divided into finish and aqua two classes substantially.Finish lapping liquid, by aviation spirit, kerosene, transformer oil and each vegetable oil, animal oil and hydro carbons, is equipped with some additives and forms.Aqua lapping liquid is formulated by water and various soap agent.Finish is mainly viscosity, lubricated and good antirust property, and cleaning must be equipped with organic solvent, has the shortcomings such as environmental pollution and expense are higher.Aqua antirust ability is poor.Lapping liquid can be divided into according to the difference of abrasive material: diamond grinding fluid, silicon-dioxide lapping liquid, cerium oxide abrasive liquid etc., wherein, diamond grinding fluid is prepared from the abundant mixed dispersion liquid of diamond abrasive grain, diamond grinding fluid can be divided into single-crystal diamond lapping liquid again, polycrystalline diamond lapping liquid and Nano diamond lapping liquid.Single-crystal diamond lapping liquid is scattered in medium by single-crystalline diamond and forms, single-crystal diamond lapping liquid has good cutting force, tooling cost is relatively low, be widely used in the grinding and polishing of the mechanically resistant materials such as superhard material, Wimet, both can improve removal rates, the amount of heat producing in grinding process can be drained rapidly again, thereby avoid workpiece surface to be burnt.Polycrystalline diamond lapping liquid is scattered in medium by polycrystalline diamond stone granulate and forms, polycrystalline diamond lapping liquid utilizes the toughness that polycrystalline diamond is good, in grinding and polishing process, can keep being difficult for producing scuffing in high grinding force, for follow-up accurate polishing provides good condition, be widely used in grinding and the polishing of the various mechanically resistant materials such as optical crystal, pottery, superhard alloy.Nano diamond lapping liquid is by detonation diadust dispersed forming in water, has good dispersion stabilization, is widely used in Ultraprecise polished.Because opticglass and jewel have high requirement to the precision of processing, Nano diamond lapping liquid can, when keeping higher removal to cut speed, form high-quality finished surface.
But, the phenomenon that at present conventional diamond grinding liquid ubiquity obviously scratches, as Chinese patent application document, (publication number is CN1392179A, open day on 01 22nd, 2003) a kind of high suspension force water soluble anti-rust grinding liquid is disclosed, it is comprised of suspension agent, flocculation agent, rust-preventive agent, lubricant etc.This lapping liquid provides a kind of abrasive material to various different compositions and different-grain diameter to have the gel waterborne anti-rust lapping liquid of higher suspension, dispersive ability, its outstanding shortcoming is exactly to have in use obvious scuffing, affect the quality of processing object, reduced converted products qualification rate.Therefore be necessary to develop a kind of novel diamond grinding liquid.
Summary of the invention
The object of the invention is to overcome the defect of above-mentioned prior art existence and a kind of low scuffing diamond grinding liquid is provided, the present invention can reduce scuffing, effectively improves the roughness of chip surface, reduces product manufacturing procedure, cuts down finished cost.
Object of the present invention is achieved through the following technical solutions, and a kind of low scuffing diamond grinding liquid is mixed and formed by the component of following weight percent:
Preferably, described low scuffing diamond grinding liquid is mixed and is formed by the component of following weight percent:
Preferred, described low scuffing diamond grinding liquid is mixed and is formed by the component of following weight percent:
Preferably, one or more mixtures in described alkane is straight chain undecane, dodecane or tridecane.
Preferably, described dispersion thixotropic agent is one or more mixtures in polyvinyl alcohol, Vinyl Ether or polyoxyethylene nonyl phenyl.
Preferably, described tensio-active agent is one or both mixtures in polyoxyethylene ethyl phenolic ether or epoxy the third hydrocarbon.
Preferably, described lubricant is one or more mixtures in silicone oil, silicon ester or phosphoric acid ester.
Preferably, described pH adjusting agent is a kind of in thanomin, trolamine, hydrochloric acid or phosphoric acid.
Preferably, described diadust is that particle diameter is the diadust of 1～10 μ m.
Compared with prior art, the present invention has following beneficial effect: the present invention is the in the situation that of same particle size, clearance is constant, effectively improve the surfaceness after polishing, reduce polishing program and activity duration, cut down finished cost, can be widely used in the grinding and polishing of LED chip, LED display, optical crystal, silicon chip, compound crystal, liquid crystal panel, jewel, pottery, germanium wafer, metal works etc.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in detail.Following examples will contribute to those skilled in the art further to understand the present invention, but not limit in any form the present invention.It should be pointed out that to those skilled in the art, without departing from the inventive concept of the premise, can also make some distortion and improvement.These all belong to protection scope of the present invention.
embodiment 1, a kind of low scuffing diamond grinding liquid preparation
(1) lapping liquid formulation selection:
(2) preparation method: according to the above ratio by alkane, disperse thixotropic agent, tensio-active agent, that lubricant is put into agitator is fully fused, obtain fused liquid, then by particle diameter, be that the diadust of 1～10 μ m is put into described fused liquid and stirred according to the above ratio, use again ultrasonic (500 watts) to disperse 10 minutes, obtain dispersion liquid, finally add above-mentioned pH adjusting agent to adjust the pH value of described dispersion liquid, obtain.
(3) scratch detection: use the above-mentioned lapping liquid preparing as polishing fluid 2 inches of 5 sapphire sheet of polishing on special glazing machine, polishing front surface roughness is in 0.05 μ m left and right, polish pressure is 40kg, polishing disk rotating speed is 80rpm, polishing fluid flow is 2mL/min, polishing time is 10min, and polishing speed is 1.8 μ m/min; After polishing, sapphire sheet surfaceness becomes 0.008 μ m, and glazed surface is without obvious cut.
embodiment 2, a kind of low scuffing diamond grinding liquid preparation
(1) lapping liquid formulation selection:
(2) preparation method: according to the above ratio by alkane, disperse thixotropic agent, tensio-active agent, that lubricant is put into agitator is fully fused, obtain fused liquid, then by particle diameter, be that the diadust of 1～10 μ m is put into described fused liquid and stirred according to the above ratio, use again ultrasonic (500 watts) to disperse 10 minutes, obtain dispersion liquid, finally add above-mentioned pH adjusting agent to adjust the pH value of described dispersion liquid, obtain.
(3) scratch detection: use the above-mentioned lapping liquid preparing as polishing fluid 2 inches of 5 sapphire sheet of polishing on special glazing machine, polishing front surface roughness is in 0.05 μ m left and right, polish pressure is 40kg, polishing disk rotating speed is 80rpm, polishing fluid flow is 2mL/min, polishing time is 10min, and polishing speed is 1.8 μ m/min; After polishing, sapphire sheet surfaceness becomes 0.008 μ m, and glazed surface is without obvious cut.
embodiment 3, a kind of low scuffing diamond grinding liquid preparation
(1) lapping liquid formulation selection:
(2) preparation method: according to the above ratio by alkane, disperse thixotropic agent, tensio-active agent, that lubricant is put into agitator is fully fused, obtain fused liquid, then by particle diameter, be that the diadust of 1～10 μ m is put into described fused liquid and stirred according to the above ratio, use again ultrasonic (500 watts) to disperse 10 minutes, obtain dispersion liquid, finally add above-mentioned pH adjusting agent to adjust the pH value of described dispersion liquid, obtain.
(3) scratch detection: use the above-mentioned lapping liquid preparing as polishing fluid 2 inches of 5 sapphire sheet of polishing on special glazing machine, polishing front surface roughness is in 0.05 μ m left and right, polish pressure is 40kg, polishing disk rotating speed is 80rpm, polishing fluid flow is 2mL/min, polishing time is 10min, and polishing speed is 1.8 μ m/min; After polishing, sapphire sheet surfaceness becomes 0.008 μ m, and glazed surface is without obvious cut.
Above specific embodiments of the invention are described.It will be appreciated that, the present invention is not limited to above-mentioned specific implementations, and those skilled in the art can make various distortion or modification within the scope of the claims, and this does not affect flesh and blood of the present invention.
Claims (9)
1. a low scuffing diamond grinding liquid, is characterized in that, by the component of following weight percent, is mixed and is formed:
2. low scuffing diamond grinding liquid as claimed in claim 1, is characterized in that, by the component of following weight percent, is mixed and is formed:
3. low scuffing diamond grinding liquid as claimed in claim 2, is characterized in that, by the component of following weight percent, is mixed and is formed:
4. low scuffing diamond grinding liquid as claimed in claim 1, is characterized in that, one or more mixtures in the undecane that described alkane is straight chain, dodecane or tridecane.
5. low scuffing diamond grinding liquid as claimed in claim 1, is characterized in that, described dispersion thixotropic agent is one or more mixtures in polyvinyl alcohol, Vinyl Ether or polyoxyethylene nonyl phenyl.
6. low scuffing diamond grinding liquid as claimed in claim 1, is characterized in that, described tensio-active agent is one or both mixtures in polyoxyethylene ethyl phenolic ether or epoxy the third hydrocarbon.
7. low scuffing diamond grinding liquid as claimed in claim 1, is characterized in that, described lubricant is one or more mixtures in silicone oil, silicon ester or phosphoric acid ester.
8. low scuffing diamond grinding liquid as claimed in claim 1, is characterized in that, described pH adjusting agent is a kind of in thanomin, trolamine, hydrochloric acid or phosphoric acid.
9. low scuffing diamond grinding liquid as claimed in claim 1, is characterized in that, described diadust is that particle diameter is the diadust of 1～10 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410032237.8A CN103756573A (en) | 2014-01-23 | 2014-01-23 | Low-scratch diamond grinding fluid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410032237.8A CN103756573A (en) | 2014-01-23 | 2014-01-23 | Low-scratch diamond grinding fluid |
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| Publication Number | Publication Date |
|---|---|
| CN103756573A true CN103756573A (en) | 2014-04-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410032237.8A Pending CN103756573A (en) | 2014-01-23 | 2014-01-23 | Low-scratch diamond grinding fluid |
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| Country | Link |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105038605A (en) * | 2015-06-16 | 2015-11-11 | 东莞市中微纳米科技有限公司 | Sapphire coarse grinding fluid |
| CN105273638A (en) * | 2015-10-14 | 2016-01-27 | 盐城工学院 | Anti-cleavage suspended grinding fluid for gallium oxide wafer and preparation method thereof |
| CN105368324A (en) * | 2015-12-07 | 2016-03-02 | 苏州博洋化学股份有限公司 | Oily diamond grinding lubricant |
| CN106566417A (en) * | 2016-10-28 | 2017-04-19 | 扬州翠佛堂珠宝有限公司 | Grinding liquid for crystal |
| CN109648404A (en) * | 2017-10-11 | 2019-04-19 | 蓝思科技（长沙）有限公司 | A kind of rough polishing light technology of ceramic product |
| CN115926747A (en) * | 2022-12-08 | 2023-04-07 | 郑州磨料磨具磨削研究所有限公司 | Concentrated aqueous grinding aid and preparation method thereof |
| CN116640518A (en) * | 2023-05-23 | 2023-08-25 | 浙江陶特容器科技股份有限公司 | Fluid grinding agent and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1417278A (en) * | 2002-12-13 | 2003-05-14 | 清华大学 | Polishing slurry for disk base sheet of memory hard disk |
| CN102268225A (en) * | 2011-05-30 | 2011-12-07 | 上海百兰朵电子科技有限公司 | Permanent-suspension diamond grinding liquid |
-
2014
- 2014-01-23 CN CN201410032237.8A patent/CN103756573A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1417278A (en) * | 2002-12-13 | 2003-05-14 | 清华大学 | Polishing slurry for disk base sheet of memory hard disk |
| CN102268225A (en) * | 2011-05-30 | 2011-12-07 | 上海百兰朵电子科技有限公司 | Permanent-suspension diamond grinding liquid |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105038605A (en) * | 2015-06-16 | 2015-11-11 | 东莞市中微纳米科技有限公司 | Sapphire coarse grinding fluid |
| CN105273638A (en) * | 2015-10-14 | 2016-01-27 | 盐城工学院 | Anti-cleavage suspended grinding fluid for gallium oxide wafer and preparation method thereof |
| CN105368324A (en) * | 2015-12-07 | 2016-03-02 | 苏州博洋化学股份有限公司 | Oily diamond grinding lubricant |
| CN106566417A (en) * | 2016-10-28 | 2017-04-19 | 扬州翠佛堂珠宝有限公司 | Grinding liquid for crystal |
| CN109648404A (en) * | 2017-10-11 | 2019-04-19 | 蓝思科技（长沙）有限公司 | A kind of rough polishing light technology of ceramic product |
| CN115926747A (en) * | 2022-12-08 | 2023-04-07 | 郑州磨料磨具磨削研究所有限公司 | Concentrated aqueous grinding aid and preparation method thereof |
| CN115926747B (en) * | 2022-12-08 | 2024-05-28 | 郑州磨料磨具磨削研究所有限公司 | Concentrated aqueous grinding aid and preparation method thereof |
| CN116640518A (en) * | 2023-05-23 | 2023-08-25 | 浙江陶特容器科技股份有限公司 | Fluid grinding agent and application thereof |
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Application publication date: 20140430 |