CN103682006A - LED (light emitting diode) structure and manufacturing method thereof - Google Patents
LED (light emitting diode) structure and manufacturing method thereof Download PDFInfo
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- CN103682006A CN103682006A CN201310753037.7A CN201310753037A CN103682006A CN 103682006 A CN103682006 A CN 103682006A CN 201310753037 A CN201310753037 A CN 201310753037A CN 103682006 A CN103682006 A CN 103682006A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000000576 coating method Methods 0.000 claims description 56
- 239000011248 coating agent Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 150000002500 ions Chemical group 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract 2
- 230000031700 light absorption Effects 0.000 abstract 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000008033 biological extinction Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
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- Led Devices (AREA)
Abstract
本发明提供的一种LED结构及其制造方法，该LED结构包括：衬底；反射层，覆盖所述衬底；LED发光结构，位于所述反射层上，该LED发光结构包括上层半导体层、下层半导体层以及位于该上层半导体层和下层半导体层之间的多量子阱层，所述上层半导体层和下层半导体层其中一个是P型掺杂，另一个是N型掺杂。本发明无需衬底转移或者衬底图形化就能克服吸光问题，有利于降低制造成本，而且有利于减少采用MOCVD形成LED发光结构时的生长时间。
An LED structure and a manufacturing method thereof provided by the present invention, the LED structure comprises: a substrate; a reflective layer covering the substrate; an LED light-emitting structure located on the reflective layer, the LED light-emitting structure comprising an upper semiconductor layer, The lower semiconductor layer and the multiple quantum well layer located between the upper semiconductor layer and the lower semiconductor layer, one of which is P-type doped and the other is N-type doped. The present invention can overcome the problem of light absorption without substrate transfer or substrate patterning, is beneficial to reduce manufacturing cost, and is beneficial to reduce the growth time when MOCVD is used to form the LED light-emitting structure.
Description
Technical field
The present invention relates to semiconductor optoelectronic chip technology field, relate in particular to a kind of LED structure and manufacture method thereof.
Background technology
Semiconductor light-emitting-diode (LED) is New Solid cold light source, it has the plurality of advantages such as efficiency is high, the life-span is long, volume is little, voltage is low, be widely used in daily life, for example traffic-control device, headlight, outdoor display, mobile phone backlight source, the indicator light of electrical equipment, partial illumination street lamp etc. all extensively adopts LED.Especially, aspect energy-conserving and environment-protective, ordinary incandescent lamp compared by LED lamp and fluorescent lamp has obvious advantage, and therefore following LED light source replaces conventional light source to become main lighting source has become common recognition.
Yet replace conventional light source, the cost of LED is low as far as possible.LED ray structure is all to adopt the preparation of metal-organic chemical vapor deposition equipment (MOCVD) technology heteroepitaxy conventionally at present.Wherein, conventional foreign substrate mainly contains sapphire, carborundum and silicon substrate at present.
Wherein, silicon substrate is with its cheap price, and the advantages such as large scale have extremely significantly advantage in LED illumination.But because silicon substrate has extinction characteristic, so the epitaxial loayer on silicon substrate need to be transferred on other substrate to be prepared into light emitting diode (LED) chip with vertical structure.Although shift by silicon substrate the light emitting diode (LED) chip with vertical structure obtaining, have a lot of advantages, the cost of chip can raise.
In addition, adopt Sapphire Substrate to need extra patterned substrate technique, also can increase device cost.
In addition, epitaxy layer thickness in current LED ray structure is 5-7 μ m substantially, for such thickness, needs to grow 7-9 hour in conventional MOCVD equipment, so the long time need to be expended a large amount of metallo-organic compound sources, causes chip cost to rise.
Summary of the invention
The problem to be solved in the present invention is to provide a kind of LED structure and manufacture method thereof, without substrate-transfer or substrate graph, just can overcome extinction problem, is conducive to reduce manufacturing cost.
For solving the problems of the technologies described above, the invention provides a kind of LED structure, comprising:
Substrate;
Reflector, covers described substrate;
LED ray structure, be positioned on described reflector, this LED ray structure comprises upper strata semiconductor layer, lower floor's semiconductor layer and the multiple quantum well layer between this upper strata semiconductor layer and lower floor's semiconductor layer, one of them is the doping of P type for described upper strata semiconductor layer and lower floor's semiconductor layer, and another is N-type doping.
According to one embodiment of present invention, described reflector for the reflectivity of 440～550nm wavelength higher than 95%.
According to one embodiment of present invention, described reflector is Bragg mirror structure.
According to one embodiment of present invention, the material in described reflector is silica and titanium oxide.
According to one embodiment of present invention, the thickness in described reflector is 2～3 μ m.
According to one embodiment of present invention, between described LED ray structure and reflector, also have AlN resilient coating, this AlN resilient coating covers described reflector, and this LED ray structure is positioned on described AlN resilient coating.
According to one embodiment of present invention, the AlN resilient coating that this AlN resilient coating is preferred orientation.
According to one embodiment of present invention, the thickness of described AlN resilient coating is 100nm～500nm.
According to one embodiment of present invention, this LED structure also comprises:
The step that runs through described upper strata semiconductor layer and multiple quantum well layer;
Be positioned at the first pad of the lower floor's semiconductor layer surface under this step, this first pad is electrically connected to described lower floor semiconductor layer;
Be positioned at the nesa coating of the upper strata semiconductor layer surface on this step, this nesa coating is electrically connected to described upper strata semiconductor layer;
Be positioned at the second pad on this nesa coating, this second pad is electrically connected to described nesa coating.
According to one embodiment of present invention, described substrate is silicon substrate or Sapphire Substrate.
The present invention also provides a kind of manufacture method of LED structure, comprising:
Substrate is provided;
Form reflector, this reflector covers described substrate;
On described reflector, form LED ray structure, this LED ray structure comprises upper strata semiconductor layer, lower floor's semiconductor layer and the multiple quantum well layer between this upper strata semiconductor layer and lower floor's semiconductor layer, one of them is the doping of P type for described upper strata semiconductor layer and lower floor's semiconductor layer, and another is N-type doping.
According to one embodiment of present invention, described reflector for the reflectivity of 440～550nm wavelength higher than 95%.
According to one embodiment of present invention, described reflector is Bragg mirror structure.
According to one embodiment of present invention, the material in described reflector is silica and titanium oxide.
According to one embodiment of present invention, the thickness in described reflector is 2～3 μ m.
According to one embodiment of present invention, the formation method in described reflector is evaporation or sputter.
According to one embodiment of present invention, the formation method in described reflector is ion assisted evaporative.
According to one embodiment of present invention, before forming described LED ray structure, also comprise: on described reflector, form AlN resilient coating, this AlN resilient coating covers described reflector, and this LED ray structure is formed on described AlN resilient coating.
According to one embodiment of present invention, the AlN resilient coating that this AlN resilient coating is preferred orientation.
According to one embodiment of present invention, the thickness of this AlN resilient coating is 100nm～500nm.
According to one embodiment of present invention, the method also comprises:
Formation runs through the step of described upper strata semiconductor layer and multiple quantum well layer;
In the upper strata semiconductor layer surface being positioned on this step, form nesa coating, this nesa coating is electrically connected to described upper strata semiconductor layer;
In the lower floor's semiconductor layer surface being positioned under this step, form the first pad, this first pad Yu Gai lower floor semiconductor layer is electrically connected to;
On this nesa coating, form the second pad, this second pad is electrically connected to described nesa coating.
According to one embodiment of present invention, described substrate is silicon substrate or Sapphire Substrate.
Compared with prior art, the present invention has the following advantages:
In the LED structure of the embodiment of the present invention, on substrate and between LED ray structure, be formed with reflector, the extinction of substrate can be avoided in reflector, thereby without doing substrate-transfer or substrate graph, is conducive to reduce manufacturing cost.
In addition, in the LED structure of the embodiment of the present invention, also have AlN resilient coating between LED ray structure and reflector, it can reduce and form the needed MOCVD growth time of LED ray structure, thereby be conducive to save metallo-organic compound source, to reduce costs.And the formation method of this AlN resilient coating is preferably sputter, sputtering method is widely used, and is applicable to volume production.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of manufacture method of the LED structure of the embodiment of the present invention;
Fig. 2 to Fig. 5 is cross-sectional view corresponding to each step in the manufacture method of LED structure of inventive embodiments.
Embodiment
Below in conjunction with specific embodiments and the drawings, the invention will be further described, but should not limit the scope of the invention with this.
With reference to figure 1, the manufacture method of LED structure of the present invention comprises the steps:
Step S11, provides substrate;
Step S12, forms reflector, and this reflector covers described substrate;
Step S13, on described reflector, form LED ray structure, this LED ray structure comprises upper strata semiconductor layer, lower floor's semiconductor layer and the multiple quantum well layer between this upper strata semiconductor layer and lower floor's semiconductor layer, one of them is the doping of P type for institute's upper strata semiconductor layer and lower floor's semiconductor layer, and another is N-type doping.
Below in conjunction with specific embodiment, be elaborated.
The first embodiment
With reference to figure 2, substrate 11 is provided, as a nonrestrictive example, the substrate 11 in the present embodiment is silicon substrate, for example, can be the silicon substrate of 2-8 cun.
Afterwards, on the surface of substrate 11, pass through to form reflector 12.This reflector 12 is preferably Bragg mirror structure, for example, can form silica (SiO by the method for evaporation or sputter
2) and titanium oxide (TiO
2) periodic structure, be also Bragg mirror structure.Preferably, can adopt ion assisted evaporative to deposit SiO
2and TiO
2periodic structure.By adjusting thickness, can so that the reflectivity of the reflector 12 forming between 440-550nm wavelength higher than 95%, its thickness range is preferably 0.1～100 μ m, is more preferably 2～3 μ m.
For example, in the present embodiment, the cycle of this Bragg mirror is 28 cycles, and its thickness is 2.13um left and right.
With reference to figure 3, on reflector 12, form AlN resilient coating 13, this AlN resilient coating is preferably the AlN resilient coating of preferred orientation, and its thickness is preferably 100nm～500nm, is more preferably 300nm.
The formation method of AlN resilient coating 13 can be sputtering method, is preferably radio-frequency magnetron sputter method.Radio-frequency magnetron sputter method is a kind of large area, film preparing technology cheaply, and it has, and depositing temperature is low, controllability strong, membrane structure and the feature such as surface ratio is more even.More specifically, the process conditions that adopt radio-frequency magnetron sputter method to form AlN resilient coating 13 can be: adopt aluminium target, operating air pressure is 1.3Pa, and power is 100W, and the temperature of substrate 11 is 100 ℃, N in sputtering atmosphere
2concentration be 20%; Or, also can adopt following process conditions: adopt aluminium target, operating air pressure is 0.8Pa, and power is 1400W, and the temperature of substrate 11 is 400 ℃, N in sputtering atmosphere
2concentration be 80%.
With reference to figure 4, on AlN resilient coating 13, form LED ray structure 17, Multiple Quantum Well (MQW) layer 15 that it comprises upper strata semiconductor layer 16, lower floor's semiconductor layer 14 and is positioned at the two time, one of them is N-type doping for upper strata semiconductor layer 16He lower floor semiconductor layer 14, and another adulterates for P type.
As a nonrestrictive example, can on AlN resilient coating, deposit the n-GaN of 1.5 μ m by organic chemical vapor deposition (MOCVD), as lower floor's semiconductor layer 14; Next deposit the multiple quantum well layer 15 of 100nm; Deposit again afterwards the p-GaN of 150nm, as upper strata semiconductor layer 16.It should be noted that, the structure of LED ray structure 17 and formation method can also adopt other structures and the method for well known to a person skilled in the art, because this part is not emphasis of the present invention, at this, do not do too much description.
With reference to figure 5, by chip manufacturing process, the structure shown in Fig. 4 is manufactured to the LED chip of planar structure.
First, form the step that runs through upper strata semiconductor layer 16 and multiple quantum well layer 15 in LED ray structure 17, the formation technique of step can be etching or other suitable technique.The residual thickness that for example, can etch into lower floor's semiconductor layer 14 is 1.2 μ m.
Afterwards, upper strata semiconductor layer 16 surfaces that can be on step form nesa coatings 19, tin indium oxide (ITO) for example, and its formation method can be electron beam evaporation, its thickness can be 3000 dusts.After forming nesa coating 19, the formation ohmic contact of can annealing.
Afterwards, can form the first pad 18 in lower floor's semiconductor layer 14 surfaces under step, and 16 surfaces of the upper strata semiconductor layer on step form the second pad 20.
By upper, the first embodiment forms reflector on silicon substrate, and LED ray structure is positioned at top, reflector, has avoided the extinction of silicon substrate, without carrying out substrate-transfer, is conducive to reduce costs.
And, the present embodiment also forms AlN resilient coating on reflector, make the integral thickness of LED ray structure without very thick, for example only need to grow the in an example LED ray structure of 1～2 μ m, and the thickness of conventional LED ray structure is generally 5～7 μ m in prior art, therefore the manufacture method of the present embodiment can shorten the time of MOCVD, greatly reduces manufacturing cost.
The second embodiment
With reference to figure 2, substrate 11 is provided, the substrate 11 of the present embodiment is Sapphire Substrate.On substrate 11, form afterwards reflector 12.The material in reflector 12, structure, forming process please refer to the first embodiment, repeat no more here.
With reference to figure 3, on reflector 12, form AlN resilient coating 13.In a second embodiment, the formation method of AlN is still radio-frequency magnetron sputter method, but does not adopt Al target response to generate AlN, but adopts the direct sputter of AlN target to obtain the AlN resilient coating 13 of preferred orientation.Concrete process conditions are: operating air pressure is 2.0Pa, and power is 300W, and temperature is 370 ℃, N in sputtering atmosphere
2concentration 99.99%.
With reference to figure 4, adopt MOCVD method on AlN resilient coating 13, to deposit LED ray structure 17.Its concrete forming process please refer to the first embodiment, repeats no more here.
With reference to figure 5, by chip manufacturing process, structure shown in Fig. 4 is manufactured to the LED chip of planar structure, its concrete technology step please refer to the first embodiment, repeats no more here.
The second embodiment forms reflector in Sapphire Substrate, and then forms LED ray structure, has avoided the patterned process of Sapphire Substrate, is conducive to reduce costs.
In addition, the second embodiment also forms AlN resilient coating on reflector, makes, without the very thick LED ray structure of growth in the MOCVD equipment expensive, to be conducive to further reduce manufacturing cost.
The above, be only preferred embodiment of the present invention, not the present invention done to any pro forma restriction.Therefore, every content that does not depart from technical solution of the present invention, just according to technical spirit of the present invention to any simple modification made for any of the above embodiments, the conversion that is equal to, all still belong in the protection range of technical solution of the present invention.
Claims (22)
1. a LED structure, is characterized in that, comprising:
Substrate;
Reflector, covers described substrate;
LED ray structure, be positioned on described reflector, this LED ray structure comprises upper strata semiconductor layer, lower floor's semiconductor layer and the multiple quantum well layer between this upper strata semiconductor layer and lower floor's semiconductor layer, one of them is the doping of P type for described upper strata semiconductor layer and lower floor's semiconductor layer, and another is N-type doping.
2. LED structure according to claim 1, is characterized in that, described reflector for the reflectivity of 440～550nm wavelength higher than 95%.
3. LED structure according to claim 1, is characterized in that, described reflector is Bragg mirror structure.
4. LED structure according to claim 3, is characterized in that, the material in described reflector is silica and titanium oxide.
5. LED structure according to claim 1, is characterized in that, the thickness in described reflector is 2～3 μ m.
6. LED structure according to claim 1, is characterized in that, between described LED ray structure and reflector, also has AlN resilient coating, and this AlN resilient coating covers described reflector, and this LED ray structure is positioned on described AlN resilient coating.
7. LED structure according to claim 6, is characterized in that, the AlN resilient coating that this AlN resilient coating is preferred orientation.
8. LED structure according to claim 6, is characterized in that, the thickness of described AlN resilient coating is 100nm～500nm.
9. LED structure according to claim 1, is characterized in that, also comprises:
The step that runs through described upper strata semiconductor layer and multiple quantum well layer;
Be positioned at the first pad of the lower floor's semiconductor layer surface under this step, this first pad is electrically connected to described lower floor semiconductor layer;
Be positioned at the nesa coating of the upper strata semiconductor layer surface on this step, this nesa coating is electrically connected to described upper strata semiconductor layer;
Be positioned at the second pad on this nesa coating, this second pad is electrically connected to described nesa coating.
10. LED structure according to claim 1, is characterized in that, described substrate is silicon substrate or Sapphire Substrate.
The manufacture method of 11. 1 kinds of LED structures, is characterized in that, comprising:
Substrate is provided;
Form reflector, this reflector covers described substrate;
On described reflector, form LED ray structure, this LED ray structure comprises upper strata semiconductor layer, lower floor's semiconductor layer and the multiple quantum well layer between this upper strata semiconductor layer and lower floor's semiconductor layer, one of them is the doping of P type for described upper strata semiconductor layer and lower floor's semiconductor layer, and another is N-type doping.
The manufacture method of 12. LED structures according to claim 11, is characterized in that, described reflector for the reflectivity of 440～550nm wavelength higher than 95%.
The manufacture method of 13. LED structures according to claim 11, is characterized in that, described reflector is Bragg mirror structure.
The manufacture method of 14. LED structures according to claim 13, is characterized in that, the material in described reflector is silica and titanium oxide.
The manufacture method of 15. LED structures according to claim 11, is characterized in that, the thickness in described reflector is 2～3 μ m.
The manufacture method of 16. LED structures according to claim 11, is characterized in that, the formation method in described reflector is evaporation or sputter.
The manufacture method of 17. LED structures according to claim 11, is characterized in that, the formation method in described reflector is ion assisted evaporative.
The manufacture method of 18. LED structures according to claim 11, it is characterized in that, before forming described LED ray structure, also comprise: on described reflector, form AlN resilient coating, this AlN resilient coating covers described reflector, and this LED ray structure is formed on described AlN resilient coating.
The manufacture method of 19. LED structures according to claim 18, is characterized in that, the AlN resilient coating that this AlN resilient coating is preferred orientation.
The manufacture method of 20. LED structures according to claim 18, is characterized in that, the thickness of this AlN resilient coating is 100nm～500nm.
The manufacture method of 21. LED structures according to claim 11, is characterized in that, also comprises:
Formation runs through the step of described upper strata semiconductor layer and multiple quantum well layer;
In the upper strata semiconductor layer surface being positioned on this step, form nesa coating, this nesa coating is electrically connected to described upper strata semiconductor layer;
In the lower floor's semiconductor layer surface being positioned under this step, form the first pad, this first pad Yu Gai lower floor semiconductor layer is electrically connected to;
On this nesa coating, form the second pad, this second pad is electrically connected to described nesa coating.
The manufacture method of 22. LED structures according to claim 11, is characterized in that, described substrate is silicon substrate or Sapphire Substrate.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914270A (en) * | 2016-06-28 | 2016-08-31 | 聚灿光电科技股份有限公司 | Manufacturing method of silicon-based gallium nitride LED epitaxial structure |
| CN106531869A (en) * | 2016-12-30 | 2017-03-22 | 合肥市华达半导体有限公司 | Convex type LED chip structure and manufacturing method thereof |
| CN109728146A (en) * | 2018-12-25 | 2019-05-07 | 郑州师范学院 | A gallium nitride diode containing reflective material |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5804834A (en) * | 1994-10-28 | 1998-09-08 | Mitsubishi Chemical Corporation | Semiconductor device having contact resistance reducing layer |
| CN101740677A (en) * | 2008-11-20 | 2010-06-16 | 深圳世纪晶源华芯有限公司 | GaN based LED epitaxial wafer of graphical substrate and method for preparing same |
| WO2012172606A1 (en) * | 2011-06-16 | 2012-12-20 | 古河電気工業株式会社 | Semiconductor laser, surface-emitting semiconductor laser, semiconductor laser module, and non-linear optical element |
| CN103339749A (en) * | 2011-01-28 | 2013-10-02 | 首尔Opto仪器股份有限公司 | Wafer level light emitting diode package and method of manufacturing same |
| CN103367578A (en) * | 2012-03-30 | 2013-10-23 | 隆达电子股份有限公司 | Light emitting diode |
| CN203674245U (en) * | 2013-12-30 | 2014-06-25 | 杭州士兰明芯科技有限公司 | LED structure |
-
2013
- 2013-12-30 CN CN201310753037.7A patent/CN103682006A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5804834A (en) * | 1994-10-28 | 1998-09-08 | Mitsubishi Chemical Corporation | Semiconductor device having contact resistance reducing layer |
| CN101740677A (en) * | 2008-11-20 | 2010-06-16 | 深圳世纪晶源华芯有限公司 | GaN based LED epitaxial wafer of graphical substrate and method for preparing same |
| CN103339749A (en) * | 2011-01-28 | 2013-10-02 | 首尔Opto仪器股份有限公司 | Wafer level light emitting diode package and method of manufacturing same |
| WO2012172606A1 (en) * | 2011-06-16 | 2012-12-20 | 古河電気工業株式会社 | Semiconductor laser, surface-emitting semiconductor laser, semiconductor laser module, and non-linear optical element |
| CN103367578A (en) * | 2012-03-30 | 2013-10-23 | 隆达电子股份有限公司 | Light emitting diode |
| CN203674245U (en) * | 2013-12-30 | 2014-06-25 | 杭州士兰明芯科技有限公司 | LED structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914270A (en) * | 2016-06-28 | 2016-08-31 | 聚灿光电科技股份有限公司 | Manufacturing method of silicon-based gallium nitride LED epitaxial structure |
| CN106531869A (en) * | 2016-12-30 | 2017-03-22 | 合肥市华达半导体有限公司 | Convex type LED chip structure and manufacturing method thereof |
| CN109728146A (en) * | 2018-12-25 | 2019-05-07 | 郑州师范学院 | A gallium nitride diode containing reflective material |
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Application publication date: 20140326 |