CN103606584A - A heterojunction solar cell composed of amorphous silicon/crystalline silicon/β-FeSi2 - Google Patents
A heterojunction solar cell composed of amorphous silicon/crystalline silicon/β-FeSi2 Download PDFInfo
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- CN103606584A CN103606584A CN201110341021.6A CN201110341021A CN103606584A CN 103606584 A CN103606584 A CN 103606584A CN 201110341021 A CN201110341021 A CN 201110341021A CN 103606584 A CN103606584 A CN 103606584A
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
- H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Abstract
本发明公开了一种由非晶硅/晶体硅/β-FeSi2组成的异质结太阳电池，其特征在于：包括依次叠层结合的受光面电极、透明导电层、p+型非晶硅层、p型晶体硅层、i型β-FeSi2层、n+型非晶硅层和背金属电极，形成P+PIN+异质结结构。本发明的太阳电池，非晶硅层具有宽的禁带宽度，同时对电池表面形成良好的表面钝化，使得电池开路电压增大，温度系数降低，高温性能明显改善；窄带隙的β-FeSi2与晶体硅同时作为光吸收层，有效拓展了晶硅电池的光谱响应范围，特别是长波段光响应，提高了电池的短路电流；由于β-FeSi2的光吸收系数高，所需厚度小，并能进一步减小晶硅层厚度，降低材料成本。
The invention discloses a heterojunction solar cell composed of amorphous silicon/crystalline silicon/β-FeSi 2 , which is characterized in that it includes a light-receiving surface electrode, a transparent conductive layer, and a p+ type amorphous silicon layer sequentially stacked and combined. , p-type crystalline silicon layer, i-type β-FeSi 2 layer, n+-type amorphous silicon layer and back metal electrode to form a P + PIN + heterojunction structure. In the solar cell of the present invention, the amorphous silicon layer has a wide forbidden band width, and at the same time forms a good surface passivation on the surface of the cell, so that the open circuit voltage of the cell is increased, the temperature coefficient is reduced, and the high temperature performance is significantly improved; the narrow band gap β-FeSi 2. At the same time as the light absorption layer with crystalline silicon, it effectively expands the spectral response range of crystalline silicon cells, especially the long-wavelength light response, which improves the short-circuit current of the cell; due to the high light absorption coefficient of β-FeSi 2 , the required thickness is small , and can further reduce the thickness of the crystalline silicon layer and reduce the material cost.
Description
Technical field
The present invention relates to a kind of solar cell of new structure, is particularly a kind of by amorphous silicon/crystalline silicon/β-FeSi
2the heterojunction solar cell forming.
Background technology
Silicon heterojunction solar battery deposits one deck amorphous silicon as emitter region on crystal silicon substrate, effectively avoided traditional crystal silicon battery High temperature diffusion technique, reduced the fire damage to silicon chip, reduced energy consumption, in addition, amorphous silicon membrane can also form good passivation to silicon chip surface, obtains higher open circuit voltage and conversion efficiency, and temperature coefficient is also less, battery high-temperature behavior is better.It is crystal silicon material that silicon heterojunction solar battery adopts, its energy gap is 1.12eV, due in photoelectric conversion process, the photon that energy is more than or equal to material energy gap can inspire electron-hole pair in silicon materials, and change into electric energy, crystal silicon battery can utilize solar spectrum can reach 1.1 μ m, therefore can obtain larger short-circuit current density, but when photon energy that silicon materials absorb is less than energy gap, photon energy dissipates energy transform into heat energy, can not convert electric energy to, this has just limited the raising of photoelectric conversion efficiency.
Environment-friendly semiconductor thin-film material β-FeSi
2the direct band gap structure, absorption coefficient with 0.80～0.92eV be large, solar spectrum is utilized to the advantages such as wide ranges, abundant raw materials, good stability, is considered to a kind of very promising narrow band gap photovoltaic material.Although people recognize β-FeSi very early
2can be applied to solar cell, but conversion efficiency is always not high, its reason is that the PN heterojunction that adopts simple FeSi2/Si to form is difficult to realize enough high Built-in potential and open circuit voltage, simultaneously due to β-FeSi
2effective controllable doped more difficult realization, so its photoelectric conversion efficiency is difficult to reach the level of crystal silicon battery.
Summary of the invention
1, goal of the invention
For the problems referred to above, the object of the invention is to overcome existing silicon heterojunction solar battery and β-FeSi
2the shortcoming of solar cell is utilized the advantage of these two kinds of batteries simultaneously, provides a kind of by amorphous silicon/crystalline silicon/β-FeSi
2the heterojunction solar cell forming.
2, technical scheme
To achieve these goals, the present invention takes following technical scheme:
A kind of by amorphous silicon/crystalline silicon/β-FeSi
2the heterojunction solar cell forming, comprises sensitive surface electrode, transparency conducting layer, p+ type amorphous silicon layer, p-type crystal silicon layer, the i type β-FeSi of lamination combination successively
2layer, n+ type amorphous silicon layer and back of the body metal electrode, form P
+pIN
+heterojunction structure.
Described sensitive surface electrode is Al, Ag, Au, Ni, Cu/Ni, Al/Ni or Ti/Pd/Ag electrode, and its thickness is 100nm～400um, and preferred thickness is 2um～200um.This sensitive surface electrode mainly works to collect sensitive surface electric current.
Described transparency conducting layer can adopt the InO of ITO, AZO, FTO or other element doping
3, SnO
2, any one or a few the combination in ZnO.Its thickness is 60um～120um, and preferred thickness is 70um～90um.This transparency conducting layer has higher light transmittance and conductivity, except playing the effect of collected current, can also reach the effect that reduces surface reflection.
Described p+ type amorphous silicon layer can be the heavily doped amorphous silicon layer of p-type, can be also bilayer or sandwich construction that the heavily doped amorphous silicon layer of intrinsic amorphous silicon transition zone and p-type forms.This p+ type amorphous silicon layer and p-type crystal silicon layer form heterojunction front-surface field, and p-type silicon chip surface is formed to good surface passivation, simultaneously because p+ type amorphous silicon layer has wide energy gap, thereby can significantly improve the open circuit voltage of battery.
Described p+ amorphous silicon layer can adopt any one or a few combination in a-Si:H, a-SiC:H, a-SiO:H, uc-Si:H, uc-SiC:H or the uc-SiO:H of p-type doping.
Described p-type crystal silicon layer can be p-type monocrystalline silicon, or p-type polysilicon, and its resistivity is 0.5～500 Ω cm, and thickness is 20um～250um, and preferred thickness is 50um～200um.This p-type crystal silicon layer is not only as light absorbing zone, simultaneously for depositing β-FeSi
2the backing material of layer.
Described i type β-FeSi
2layer is intrinsic β-FeSi
2, belonging to direct gap semiconductor material, energy gap, at 0.80～0.92eV, has the high absorption coefficient of light and carrier mobility.Its thickness is 20nm～4um, and preferred thickness is 200nm～2um.This p-type crystal silicon layer and unadulterated i type β-FeSi
2form pi heterojunction, have following features: (1) is due to β-FeSi
2there is high absorption coefficient, so i type β-FeSi
2layer can be thinner, and the thickness of p-type crystalline silicon is further attenuate also; (2) i type β-FeSi
2layer adopts intrinsic β-FeSi2, without to β-FeSi
2deliberately adulterate, can reduce the high defect concentration that causes due to doping, improve photoelectric conversion efficiency.(3) due to β-FeSi
2energy gap is less than crystalline silicon, can effectively utilize the light through crystal silicon layer, particularly photon energy lower than the longwave optical of crystal silicon band gap 1.12eV.
Described n+ type amorphous silicon layer can be the heavily doped amorphous silicon layer of N-shaped, can be also bilayer or sandwich construction that the heavily doped amorphous silicon layer of intrinsic amorphous silicon transition zone and N-shaped forms.This n+ amorphous silicon layer can adopt any one or a few combination in a-Si:H, a-SiC:H, a-SiO:H, uc-Si:H, uc-SiC:H or the uc-SiO:H of N-shaped doping.This n+ type amorphous silicon layer effect is to form good ohmic contact with back electrode, simultaneously to β-FeSi
2form good surface passivation.
Described back electrode is Al, Ag, Au, Ni, Cu/Ni, Al/Ni or Ti/Pd/Ag electrode, and its thickness is 20nm～100um, and preferred thickness is 1um～50um.Back electrode adopts back side all standing, and its effect is to collect back of the body electric current, increases long wave reflection simultaneously, improves the longwave optical response of battery.
3, beneficial effect
Due to the employing of technique scheme, compared with prior art, tool of the present invention has the following advantages:
(1) adopt the β-FeSi of the crystalline silicon of (p+) amorphous silicon/(p)/(i)
2/ (n+) amorphous silicon forms P
+pIN
+structure, device material therefor is Fe and Si, is environment-friendly material, raw material reserves in the earth are large; The manufacture craft of device can realize by low temperature coating process, has avoided High temperature diffusion and the sintering process of traditional crystal silicon battery, and energy consumption is lower.
(2) amorphous silicon layer has wide energy gap, battery surface is formed to good surface passivation simultaneously, and battery open circuit voltage is increased, and temperature coefficient reduces, and high-temperature behavior is obviously improved.
(3) β-FeSi of narrow band gap
2simultaneously as light absorbing zone, effectively expanded the spectral response range of crystal silicon battery with crystalline silicon, particularly long-wave band photoresponse, has improved the short circuit current of battery.
(4) due to β-FeSi
2the absorption coefficient of light high, desired thickness is little, and can further reduce crystal silicon layer thickness, reduces material cost.
Accompanying drawing explanation
Accompanying drawing 1 is the β-FeSi of the crystalline silicon of employing provided by the invention (p+) amorphous silicon/(p)/(i)
2/ (n+) amorphous silicon forms P
+pIN
+the structural representation of heterojunction solar cell.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing 1, the present invention is described in more detail:
Referring to accompanying drawing 1, a kind of by amorphous silicon/crystalline silicon/β-FeSi
2the heterojunction solar cell forming, comprises sensitive surface electrode 15, transparency conducting layer 14, p+ type amorphous silicon layer 11, p-type crystal silicon layer 10, the i type β-FeSi of lamination combination successively
2 layer 12, n+ type amorphous silicon layer 13 and back of the body metal electrode 16, form P
+pIN
+heterojunction structure.
Described sensitive surface electrode 15 is Ag electrode, and its thickness is 20um.This sensitive surface electrode 15 mainly works to collect sensitive surface electric current.
Described transparency conducting layer 14 adopts ito thin film, and thickness is 80nm, light transmittance 87%, and square resistance is 35 Ω/.This transparency conducting layer 14, except playing the effect of collected current, can also reach the effect that reduces surface reflection.
Described p+ type amorphous silicon layer 11 adopts 5nm intrinsic a-Si:H film and the heavily doped a-SiC:H film of 10nm p-type to form composite bed.This p+ type amorphous silicon layer 11 forms heterojunction front-surface field with p-type crystal silicon layer 10, and p-type silicon chip surface is formed to good surface passivation, simultaneously because p+ type amorphous silicon layer 11 has wide energy gap, thereby can effectively improve the open circuit voltage of battery.
Described p-type crystal silicon layer 10 adopts p-type monocrystalline silicon piece, and resistivity is 3.0 Ω cm, and thickness is 100um.This p-type crystal silicon layer is not only as light absorbing zone, simultaneously for depositing β-FeSi
2the backing material of layer.
Described i type β-FeSi
2layer 12 energy gap are 0.86eV, and its thickness is 2um.This intrinsic β-FeSi
2layer 12 forms heterogeneous PI knot with p-type crystal silicon layer 10, has following features: (1) is due to β-FeSi
2there is high absorption coefficient, so i type β-FeSi
2layer can be thinner, and the thickness of p-type crystalline silicon is further attenuate also; (2) i type β-FeSi
2layer adopts intrinsic β-FeSi
2, without to β-FeSi
2deliberately adulterate, can reduce the high defect concentration that causes due to doping, improve photoelectric conversion efficiency.(3) due to β-FeSi
2energy gap is less than crystalline silicon, can effectively utilize the light through crystal silicon layer, particularly photon energy lower than the longwave optical of crystal silicon band gap 1.12eV.
Described n+ type amorphous silicon layer 13 is for being the heavily doped uc-Si:H film of N-shaped, and its thickness is 30nm.These n+ type amorphous silicon layer 13 effects are to form good ohmic contact with back electrode, simultaneously to β-FeSi
2form good surface passivation.
Described back electrode 16 is Al electrode, and its thickness is 2um.Back electrode 16 adopts back side all standing, and its effect is to collect back of the body electric current, increases long wave reflection simultaneously, improves the longwave optical response of battery.
Claims (10)
1. one kind by amorphous silicon/crystalline silicon/β-FeSi
2the heterojunction solar cell forming, is characterized in that: the sensitive surface electrode, transparency conducting layer, p+ type amorphous silicon layer, p-type crystal silicon layer, the i type β-FeSi that comprise lamination combination successively
2layer, n+ type amorphous silicon layer and back of the body metal electrode, form P
+pIN
+heterojunction structure.
2. as claimed in claim 1 by amorphous silicon/crystalline silicon/β-FeSi
2the heterojunction solar cell forming, is characterized in that: described sensitive surface electrode is Al, Ag, Au, Ni, Cu/Ni, Al/Ni or Ti/Pd/Ag electrode, and its thickness is 100nm～400um.
3. as claimed in claim 1 by amorphous silicon/crystalline silicon/β-FeSi
2the heterojunction solar cell forming, is characterized in that: described transparency conducting layer can adopt the InO of ITO, AZO, FTO or other element doping
3, SnO
2, any one or a few the combination in ZnO, its thickness is 60um～120um.
4. as claimed in claim 1 by amorphous silicon/crystalline silicon/β-FeSi
2the heterojunction solar cell forming, is characterized in that: described p+ type amorphous silicon layer can be the heavily doped amorphous silicon layer of p-type, can be also bilayer or sandwich construction that the heavily doped amorphous silicon layer of intrinsic amorphous silicon transition zone and p-type forms.
5. as claimed in claim 1 by amorphous silicon/crystalline silicon/β-FeSi
2the heterojunction solar cell forming, is characterized in that: described p+ amorphous silicon layer can adopt any one or a few combination in a-Si:H, a-SiC:H, a-SiO:H, uc-Si:H, uc-SiC:H or the uc-SiO:H of p-type doping.
6. as claimed in claim 1 by amorphous silicon/crystalline silicon/β-FeSi
2the heterojunction solar cell forming, is characterized in that: described p-type crystal silicon layer can be p-type monocrystalline silicon, or p-type polysilicon, its resistivity is 0.5～500 Ω cm, and thickness is 20um～250um.
7. as claimed in claim 1 by amorphous silicon/crystalline silicon/β-FeSi
2the heterojunction solar cell forming, is characterized in that: described i type β-FeSi
2layer is intrinsic β-FeSi
2, energy gap is at 0.80～0.92eV, and its thickness is 20nm～4um.
8. as claimed in claim 1 by amorphous silicon/crystalline silicon/β-FeSi
2the heterojunction solar cell forming, is characterized in that: described n+ type amorphous silicon layer can be the heavily doped amorphous silicon layer of N-shaped, can be also bilayer or sandwich construction that the heavily doped amorphous silicon layer of intrinsic amorphous silicon transition zone and N-shaped forms.
9. as claimed in claim 1 by amorphous silicon/crystalline silicon/β-FeSi
2the heterojunction solar cell forming, is characterized in that: this n+ amorphous silicon layer can adopt any one or a few combination in a-Si:H, a-SiC:H, a-SiO:H, uc-Si:H, uc-SiC:H or the uc-SiO:H of N-shaped doping.
10. as claimed in claim 1 by amorphous silicon/crystalline silicon/β-FeSi
2the heterojunction solar cell forming, is characterized in that: described back electrode is Al, Ag, Au, Ni, Cu/Ni, Al/Ni or Ti/Pd/Ag electrode, and its thickness is 20nm～100um, and preferred thickness is 1um～50um.
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| CN201110341021.6A CN103606584A (en) | 2011-11-02 | 2011-11-02 | A heterojunction solar cell composed of amorphous silicon/crystalline silicon/β-FeSi2 |
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| CN201110341021.6A CN103606584A (en) | 2011-11-02 | 2011-11-02 | A heterojunction solar cell composed of amorphous silicon/crystalline silicon/β-FeSi2 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393068A (en) * | 2014-12-17 | 2015-03-04 | 苏州费米光电有限公司 | Solar panel with high conversion efficiency |
| CN105720118A (en) * | 2016-02-06 | 2016-06-29 | 中国华能集团清洁能源技术研究院有限公司 | Silicon thin film solar cell |
| CN114520269A (en) * | 2022-02-17 | 2022-05-20 | 河南工程学院 | Wavelength-adjustable wide-spectrum photoelectric device |
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| CN101510574A (en) * | 2009-03-18 | 2009-08-19 | 南开大学 | Method for preparing narrow bandgap film photovoltaic material beta-FeSi2 |
| CN101719521A (en) * | 2009-12-01 | 2010-06-02 | 湖北大学 | Solar cell of sandwich structure consisting of Si/FeSi2/Si and manufacturing method thereof |
| CN102148280A (en) * | 2010-02-10 | 2011-08-10 | 上海空间电源研究所 | Novel silicon substrate heterojunction solar cell |
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| US6943388B1 (en) * | 2004-03-18 | 2005-09-13 | National Institute Of Advanced Industrial Science And Technology | Sheet-type β-FeSi2 element, and method and device for manufacturing the same |
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| CN101719521A (en) * | 2009-12-01 | 2010-06-02 | 湖北大学 | Solar cell of sandwich structure consisting of Si/FeSi2/Si and manufacturing method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393068A (en) * | 2014-12-17 | 2015-03-04 | 苏州费米光电有限公司 | Solar panel with high conversion efficiency |
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| CN105720118A (en) * | 2016-02-06 | 2016-06-29 | 中国华能集团清洁能源技术研究院有限公司 | Silicon thin film solar cell |
| CN105720118B (en) * | 2016-02-06 | 2017-10-27 | 中国华能集团清洁能源技术研究院有限公司 | Silicon film solar batteries |
| CN114520269A (en) * | 2022-02-17 | 2022-05-20 | 河南工程学院 | Wavelength-adjustable wide-spectrum photoelectric device |
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Application publication date: 20140226 |