CN103579210A - Connection method of LED unit and heat dissipation substrate - Google Patents

Abstract

The present invention relates to semiconductor lighting technology, in particular to a method for connecting a light-emitting diode ( LED ) unit to an insulating and heat-conducting substrate, an LED light-emitting module based on the method, and a method for manufacturing the LED light-emitting module. An LED lighting module according to an embodiment of the present invention includes: a metal carrier ( 110 ), which includes a plurality of interconnected pattern areas ( 111, 112 , 113, 114 ); at least one LED die (120A, 120B, 120C) , which includes a The electrodes at the bottom are also arranged on different pattern areas, wherein the electrodes are respectively connected to one of the different pattern areas; and a frame (130) made of insulating material, which is connected to the pattern area fixed together.

Description

Connection of light-emitting diode unit and heat sink substrate

technical field

The invention relates to semiconductor lighting technology, in particular to a method for connecting a light-emitting diode (LED) unit and a heat dissipation substrate, an LED light-emitting module based on the method, and a method for manufacturing the LED light-emitting module.

Background technique

The light-emitting diode (LED) currently used as a light source in lighting devices is a solid-state semiconductor device. Its basic structure generally includes a bracket with leads, a semiconductor wafer placed on the bracket, and packaging materials that seal the wafer around. (such as silicone or epoxy). The above-mentioned semiconductor wafer contains a P-N structure. When the current passes through, electrons are pushed to the P region, and in the P region, the electrons recombine with the holes, and then emit energy in the form of photons, and the wavelength of light is formed by the material forming the P-N structure. decided. Compared with traditional light sources, LED light sources have a series of advantages that other light sources do not have, such as no pollution, long life, low energy consumption, vibration resistance, convenient control and easy dimming, etc.

The characteristic of LED is that it generates extremely high heat in a very small volume, and its own heat capacity is very small, so the heat generated must be transmitted as fast as possible, otherwise it will cause the junction temperature to rise and affect the performance of the LED. and longevity. For high-power LEDs, the problem of heat dissipation is particularly prominent. It can be said that heat dissipation has become a technical bottleneck in the development of current semiconductor lighting technology. For this reason, the industry has proposed various optimized designs for heat dissipation from the chip, circuit board to every level of the system, in order to obtain the best heat dissipation effect.

As far as the chip level is concerned, the heat dissipation capability can generally be improved by increasing the chip size and changing the material structure. For example, in order to improve the heat dissipation of the substrate, Cree uses a silicon carbide substrate, whose thermal conductivity is nearly 20 times higher than that of sapphire.

At the circuit board level, many LED lamps currently use aluminum substrates as printed circuit boards. This substrate has a multi-layer structure, and the middle layer uses an insulating layer material with a high thermal conductivity, so that the heat energy of the LED chip can pass through the lower layer. The aluminum sheet diffuses and passes out quickly.

For the system level, the commonly used heat dissipation strategy is to configure heat dissipation components (such as fins, heat pipes, vapor chambers, loop heat pipes, and piezoelectric fans) for LED lamps, so that the heat generated by LEDs can be quickly dissipated to in the surrounding environment.

It can be seen from the above that the heat generated by the LED chip needs to go through multiple interfaces (such as the interface between the wafer and the bracket, the interface between the packaged chip and the circuit board, and the interface between the circuit board and the heat dissipation component, etc.) before it can finally be transferred to the environment. to go. Therefore, how to reduce the thermal resistance so that the heat can be efficiently transmitted is a very important issue in the heat dissipation design of the LED lighting device.

Contents of the invention

The object of the present invention is to provide a light-emitting diode light-emitting module, which has the advantages of excellent heat dissipation effect and low manufacturing cost.

Above-mentioned purpose of the present invention can be realized through following technical scheme:

A light emitting diode (LED) lighting module, comprising:

a metal carrier comprising a plurality of interconnected pattern areas;

at least one LED die comprising electrodes formed at the bottom and disposed on different said pattern areas, wherein said electrodes are respectively connected to one of the different pattern areas; and

A frame made of insulating material is fixed together with the pattern area.

Preferably, in the LED lighting module according to one embodiment of the present invention, the LED dies are arranged on different pattern areas by means of a flip-chip process.

Preferably, in the LED lighting module according to one embodiment of the present invention, at least two of the pattern areas include areas used as pins of the LED lighting module.

Preferably, in the LED lighting module according to one embodiment of the present invention, the number of the LED dies is at least two, and they are connected in series, in parallel or in combination by means of the pattern area.

Preferably, in the LED lighting module according to one embodiment of the present invention, the frame surrounds the LED die.

Preferably, in the LED lighting module according to one embodiment of the present invention, the LED die is covered with transparent silica gel mixed with fluorescent powder.

Preferably, in the LED lighting module according to one embodiment of the present invention, the LED dies are covered with phosphor powder and transparent silica gel in sequence.

Another object of the present invention is to provide a method for manufacturing the above-mentioned LED lighting module, which has the advantage of low manufacturing cost.

Above-mentioned purpose of the present invention can be realized through following technical scheme:

A method of manufacturing the above-mentioned LED lighting module, comprising the following steps:

Provide an LED bracket, which includes a metal template and a plurality of frames made of insulating materials, the metal template includes a common area and a plurality of pattern units, wherein each of the pattern units is fixed together with one of the frames and including a plurality of pattern areas connected to the common area;

For each of the pattern units, a plurality of LED dies are arranged on different pattern areas, wherein the electrodes at the bottom of the LED dies are respectively connected to one of the different pattern areas; and

Each of the pattern units is cut from the common area so that the pattern areas are not communicated with each other.

Preferably, in the method according to one embodiment of the present invention, the LED dies are arranged on different pattern areas by means of a flip-chip process.

Preferably, in the method according to one embodiment of the present invention, each of the pattern units is fixed together with the frame through an injection molding process.

Preferably, in the method according to an embodiment of the present invention, between the step of arranging a plurality of LED dies on different pattern areas and the step of cutting each of the pattern units from the common area, The method further includes the following steps: covering the LED tube core with transparent silica gel mixed with fluorescent powder.

Preferably, in the method according to an embodiment of the present invention, between the step of arranging a plurality of LED dies on different pattern areas and the step of cutting each of the pattern units from the common area, The method further includes the following steps: sequentially covering phosphor powder and transparent silica gel on the LED tube core.

Another object of the present invention is to provide a method for arranging light-emitting diodes on an insulating and heat-conducting substrate, which has the advantages of excellent heat dissipation effect and low implementation cost.

Above-mentioned purpose of the present invention can be realized through following technical scheme:

A method for arranging light-emitting diodes (LEDs) on an insulating and heat-conducting substrate, comprising the following steps:

An LED lighting module is provided, the LED module includes a frame made of insulating material, a plurality of metal pattern areas that are not connected to each other and at least one LED tube core, the metal pattern area is fixed with the frame, and the LED tube The cores are arranged on different metal pattern areas, wherein the electrodes at the bottom of the LED dies are respectively connected to one of the different metal pattern areas, and at least two of the metal pattern areas contain the area of the external pins of the LED die; and

The metal pattern area is fixed on the surface of the insulating and heat-conducting substrate, wherein the surface of the insulating and heat-conducting substrate is formed with a wiring layer electrically connected to the area used as the external pin of the LED die.

Preferably, in the method according to one embodiment of the present invention, the metal pattern region is fixed on the surface of the insulating and heat-conducting substrate by means of electronic paste.

Above-mentioned purpose of the present invention can also be realized by following technical scheme:

A method for arranging light-emitting diodes (LEDs) on a non-insulating heat-dissipating substrate, comprising the following steps:

An LED lighting module is provided, the LED lighting module includes a frame, at least a pair of first metal pattern areas, a second metal pattern area and at least one LED die, the first and second metal pattern areas are not connected to each other and are connected to the The frames are fixed together, wherein the first metal pattern area is used as an electrode area, the LED die is arranged on the second metal pattern area, and the LED die is connected to the first metal pattern area by wires. the patterned areas are electrically connected together; and

The second metal pattern area is welded on the surface of the non-insulating heat dissipation substrate, and the first metal pattern area is located inside or above the through hole on the non-insulation heat dissipation substrate.

Preferably, in the method according to one embodiment of the present invention, when the LED dies and the first metal pattern area are electrically connected together by wires, the LED dies are also connected together by wires.

Preferably, in the method according to one embodiment of the present invention, the non-insulated heat dissipation substrate is made of metal or electrically non-insulated heat-conducting plastic.

Preferably, in the method according to one embodiment of the present invention, the surface of the non-insulating heat dissipation substrate is coated with an infrared radiation material.

Preferably, in the method according to one embodiment of the present invention, the first and second metal pattern regions are fixed together with the frame by an injection molding process.

Description of drawings

The above-mentioned and/or other aspects and advantages of the present invention will become clearer and easier to understand through the following descriptions in conjunction with various aspects of the accompanying drawings. In the accompanying drawings, the same or similar units are represented by the same reference numerals, and the accompanying drawings include:

FIG. 1 is a schematic diagram of a light emitting diode (LED) lighting module according to an embodiment of the present invention.

Fig. 2 is a schematic diagram of a method for installing an LED lighting module on a heat dissipation substrate according to an embodiment of the present invention.

Fig. 3 is a flow chart of manufacturing an LED lighting module according to an embodiment of the present invention.

4A-4C are schematic diagrams of the manufacturing method of the LED lighting module shown in FIG. 3 .

5A and 5B are schematic diagrams of a light emitting diode (LED) lighting module according to another embodiment of the present invention, wherein FIG. 5A is a top view of the LED lighting module, and FIG. 5B is a schematic plan view of the metal carrier in FIG. 5A .

FIG. 6 is a schematic diagram of a light emitting diode (LED) lighting module according to another embodiment of the present invention.

Fig. 7 is a schematic diagram of a method for installing an LED lighting module on a heat dissipation substrate according to another embodiment of the present invention.

List of reference numbers:

10 LED lighting modules

110 metal carrier

111, 112, 113, 114 pattern area

111A, 114A pins

120A, 120B, 120C LED die

130 frames

20 heat sink

210 Wiring

30 LED Bracket Template

40 metal templates

410 pattern units

411, 412, 413, 414 pattern area

420 public area

421 border

422 connection area

50 LED lighting modules

510 metal carrier

511, 512, 513, 514 pattern area

520A, 520B, 520C LED Die

530 frame

60 LED lighting modules

610 metal carrier

620 LED die

630 frame

611, 612 The first pattern area

613 The second pattern area

611A, 612A pins

640 leads

70 Heat sink substrates made of metal or non-electrically insulating thermally conductive plastic

710A, 710B Through holes.

Detailed ways

The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. This invention may, however, be embodied in different forms and should not be construed as limited to only the embodiments set forth herein. The given above-mentioned embodiments are intended to make the disclosure herein comprehensive and complete, and to more fully convey the protection scope of the present invention to those skilled in the art.

In this specification, unless otherwise specified, the term "semiconductor wafer" refers to a plurality of independent individual circuits formed on a semiconductor material (such as silicon, gallium arsenide, etc.), a "semiconductor wafer" or "die ” refers to such individual circuits, while “packaged chip” refers to the packaged physical structure of a semiconductor die, typically such as mounted on a carrier and encapsulated with an encapsulant.

The term "light-emitting diode unit" refers to a unit comprising electroluminescent materials, examples of such units include but are not limited to P-N junction inorganic semiconductor light-emitting diodes and organic light-emitting diodes (OLEDs and polymer light-emitting diodes (PLEDs)).

Junction inorganic semiconductor light emitting diodes may have different structural forms, including but not limited to light emitting diode dies and light emitting diode monomers. Among them, "light-emitting diode die" refers to a semiconductor wafer with P-N structure and electroluminescence capability, while "light-emitting diode monomer" refers to the physical structure formed after the die is packaged. In one physical structure, the die is mounted, for example, on a standoff and encapsulated with an encapsulant.

The terms "wiring", "wiring pattern" and "wiring layer" refer to conductive patterns arranged on an insulating surface for electrical connection between components, including but not limited to traces and holes (such as pads, component holes, fastening holes and metallized holes, etc.).

The term "thermal radiation" refers to a phenomenon in which an object radiates electromagnetic waves due to having a temperature.

The term "thermal conduction" refers to the manner in which heat is transferred in a solid from a higher temperature part to a cooler part.

The term "ceramic material" generally refers to non-metallic inorganic materials that require high temperature treatment or densification, including but not limited to silicates, oxides, carbides, nitrides, sulfides, borides, etc.

The term "insulating and heat-conducting polymer composite material" refers to such a polymer material, which is filled with metal or inorganic fillers with high thermal conductivity to form a heat-conducting network chain inside, so as to have a high thermal conductivity. Examples of insulating and heat-conducting polymer composite materials include, but are not limited to, polypropylene materials added with alumina, polycarbonate and acrylonitrile-butadiene-styrene terpolymers added with alumina, silicon carbide, and bismuth oxide, and the like. For a detailed description of insulating and thermally conductive polymer composite materials, please refer to the paper "Research on Polycarbonate and Polycarbonate Alloy Insulating and Thermally Conductive Polymer Materials" by Li Li et al. (Journal of Materials Heat Treatment, August 2007, Vol. 28, No.4, pp51-54) and Li Bing et al's paper "Application of Aluminum Oxide in Insulating and Thermally Conductive Polymer Composite Materials" ("Plastic Additives" 2008 No. 3, pp14-16), these documents are quoted in full method is included in this manual.

The term "infrared radiating material" refers to a material that is engineered to absorb heat and emit a large amount of infrared light, which has a high emissivity. Further, in the embodiments of the present invention, graphite or room temperature infrared ceramic radiation material can be used as the infrared radiation material covering the surface of the radiator or constituting the infrared radiation material of the radiator. Room temperature infrared ceramic radiation materials include but are not limited to at least one of the following materials: magnesium oxide, aluminum oxide, calcium oxide, titanium oxide, silicon oxide, chromium oxide, iron oxide, manganese oxide, zirconium oxide, barium oxide, cordierite , mullite, boron carbide, silicon carbide, titanium carbide, molybdenum carbide, tungsten carbide, zirconium carbide, tantalum carbide, boron nitride, aluminum nitride, silicon nitride, zirconium nitride, titanium nitride, titanium silicide, silicide Molybdenum, tungsten silicide, titanium boride, zirconium boride, and chromium boride. For a detailed description of infrared ceramic radiation materials at room temperature, please refer to the paper "Research Status and Applications of High-Efficiency Infrared Radiation Ceramics" by Li Hongtao, Liu Jianxue, etc. ) and Wang Qianping's paper "Research Progress and Application of High Radiation Infrared Ceramic Materials" ("Journal of Ceramics" 2011 No. 3), these documents are included in this specification by reference in their entirety.

In the present invention, it is better to use the following criteria as one of the considerations for selecting infrared radiation materials: below the set P-N junction temperature (for example, a temperature value in the range of 50-80 degrees Celsius), the infrared radiation Radiative materials still have high emissivity (eg, greater than or equal to 70%).

The term "metal" refers to substances of positively charged elements, and mixtures of substances of two or more positively charged elements.

"Electrically connected" should be understood to include the case of direct transmission of electrical energy or electrical signals between two units, or the case of indirect transmission of electrical energy or electrical signals via one or more third units.

Words such as "comprising" and "comprising" mean that in addition to the units and steps that are directly and explicitly stated in the specification and claims, the technical solution of the present invention does not exclude other elements that are not directly or explicitly stated. Situation of units and steps.

Terms such as "first", "second", "third" and "fourth" do not denote the sequence of elements in terms of time, space, size, etc. but are used only to distinguish elements.

In order to improve the heat dissipation effect, the LED unit and the heat dissipation substrate can be connected together in the following ways: first prepare the heat dissipation substrate (for example, made of insulating and heat-conducting materials such as ceramics and insulating heat-conducting polymer composites), and then use eutectic or cladding The LED die is placed on the heat dissipation substrate by the crystallization process. When the LED die and the heat dissipation substrate are connected in a eutectic or flip-chip manner, the heat dissipation efficiency is greatly improved due to the reduction of the thermal interface.

However, it should be pointed out that the above-mentioned connection method between the LED unit and the heat dissipation substrate has high requirements on the wiring accuracy of the heat dissipation substrate and the flatness of the circuit surface, which makes the thickness of the thick film and low-temperature co-fired ceramic substrates affected by the process screen due to the precision. It is difficult to use due to the influence of the problem and the sintering shrinkage ratio.

According to an embodiment of the present invention, in order to solve the above problems, it is considered to use a metal carrier plate as a transition medium between the LED die and the heat dissipation substrate. Specifically, firstly, the LED dies are placed on a metal carrier to form an LED light-emitting module, wherein the metal carrier is designed to have a certain pattern, which includes a plurality of pattern areas that are not connected to each other, and the LED dies are is set on the pattern area. Among these pattern areas, some are used as the carrying area of the LED die, while the other pattern areas can be used exclusively as the electrode area of the LED light-emitting module (hereinafter also referred to as "pin") or also as the carrying area of the LED die. . Then, for example, fix the LED light-emitting module on the designated position of the heat dissipation substrate by welding, and make the pins on the metal carrier board electrically connected with the wiring layer on the heat dissipation substrate, thereby realizing the mechanical compatibility between the LED die and the heat dissipation substrate. Electrical connections. Since the metal (such as copper or aluminum) has good bonding ability with the LED die and the heat dissipation substrate, and the surface contact between the metal carrier and the heat dissipation substrate reduces the wiring accuracy of the heat dissipation substrate when setting the LED unit and flatness requirements.

In the above-mentioned embodiments, the arrangement of the LED dies on the metal carrier can be realized, for example, by means of a COB packaging process. Specifically, the LED die can be fixed on the pattern area of the metal carrier by eutectic welding technology, and then the interconnection between the LED die and the first pattern area as the electrode area can be realized, for example, through a wire bonding process. Connection. Finally, the LED tube core and the leads are encapsulated with a sealing material to form an LED lighting module. Optionally, when both the P-type electrode and the N-type electrode of the LED die are located on the lower surface of the die, the LED die can also be placed on the metal carrier by means of a flip-chip process.

According to another embodiment of the present invention, when the heat dissipation substrate is made of conductive materials such as metal or electrically non-insulating thermally conductive plastic (such as Stanyl TC 501 thermally conductive plastic produced by the Royal DSM Group of the Netherlands), metal is also used. The carrier plate acts as a transition medium between the LED die and the heat dissipation substrate. Specifically, firstly, the LED die is placed on a metal carrier plate including a plurality of interconnected pattern regions to form an LED light-emitting module. Among these pattern areas, some are used as the carrying area of the LED die, while other pattern areas can be specially used as the electrode area of the LED light-emitting module. Then, for example, by welding, the pattern area not used as electrode area is welded on the heat dissipation substrate, and the pattern area used as electrode area is positioned inside or above the through hole on the metal heat dissipation substrate for electrical connection with the external circuit. Since the metal carrier board has good bonding ability with the LED die and the metal heat dissipation substrate, and the surface contact between the metal carrier board and the metal heat dissipation substrate reduces the wiring accuracy and flatness of the heat dissipation substrate when setting the LED unit. degree requirements.

FIG. 1 is a schematic diagram of a light emitting diode (LED) lighting module according to an embodiment of the present invention.

As shown in FIG. 1 , the LED lighting module 10 includes a metal carrier 110 , a plurality of LED dies 120A- 120C and a frame 130 . The metal carrier 110 includes pattern areas 111 , 112 , 113 and 114 , wherein the pattern areas 111 and 114 respectively include an elongated area 111A and 114A used as a pair of pins for electrically connecting the LED lighting module to an external circuit. In this embodiment, the pattern areas 111 - 114 are not connected to each other, and they are fixed together with the frame 130 made of insulating material (such as plastic) through injection molding process, so that their relative position relationship remains fixed. Both the P-type electrodes and the N-type electrodes of the LED dies 120A- 120C are disposed on the lower surface, and as shown in FIG. 1 , each LED die is respectively disposed on a pair of adjacent pattern regions. Specifically, the LED die 120A is located on the pattern area 111 and the pattern area 112 at the same time, and its P-type electrode and N-type electrode are soldered to the pattern area 111 and the pattern area 112 respectively. Similarly, the LED die 120B is located on the pattern areas 112 and 113 at the same time, and its P-type electrode and N-type electrode are soldered to the pattern areas 112 and 113 respectively. The LED die 120C is located on the pattern area 113 and the pattern area 114 at the same time, and its P-type electrode and N-type electrode are soldered to the pattern area 113 and the pattern area 114 respectively. Thus, the LED dies can be connected in series between pins 111A and 114A without the aid of wires.

Due to the good thermal conductivity of the metal, the thermal resistance between the LED die and the pattern area is close to zero, so the heat generated by the former can be efficiently transferred to the heat dissipation substrate under the light emitting module 10 . In addition, in this embodiment, the electrical connection of the LED dies can be completed at the same time as the LED dies are placed on the metal carrier, thus simplifying the manufacturing process. Preferably, the disposition and electrical connection of the LED die on the metal carrier can be completed by using a flip-chip process.

When the light-emitting wavelength of the LED die deviates from the color of the actually required illumination light, the photoluminescence effect of the fluorescent material can be used to realize the change of the wavelength. Specifically, the LED die can be covered or surrounded by a silica gel mixed with a phosphor such as yttrium aluminum garnet (YAG) phosphor. Optionally, phosphor powder can be coated on the surface of each LED die first, and then the individual LED dies can be covered or wrapped with silica gel or the entire area surrounded by the frame 130 can be covered with silica gel. As shown in FIG. 1 , due to the arrangement of the frame 130 , the flow of silicone is restricted and only distributed around the LED die.

It should be pointed out that, in this embodiment, the connection mode between the LED dies is not limited to the series connection shown in FIG. 1 , and other connection forms such as parallel connection or cross array can also be used. For example, the pattern areas 112 and 113 in FIG. 1 can be omitted and the LED dies 120A-120C are all set in the pattern area 111 and the pattern area 114 at the same time, and the P-type electrode and the N-type electrode of each LED die are soldered to the pattern area respectively. The area 111 and the pattern area 114, thereby realizing the parallel connection between the LED dies. Furthermore, this embodiment takes a plurality of LED dies as an example, but it is also feasible to use a single LED die as a light emitting element.

Fig. 2 is a schematic diagram of a method for installing an LED lighting module on a heat dissipation substrate according to an embodiment of the present invention. In this embodiment, the LED lighting module shown in FIG. 1 is taken as an example to describe the connection method between the LED unit and the heat dissipation substrate, and the heat dissipation substrate is made of thermally conductive and insulating materials such as ceramics. However, it will be recognized that the method described here is also applicable to LED lighting modules with other structures.

1 and 2, it can be seen that the pins 111A and 114A of the LED lighting module 10 extend from the frame 130 and are electrically connected to the wiring 210 on the surface of the substrate 20, and the wiring 210 can be connected to the static electricity integrated on the substrate 20. Protection circuit, drive circuit and control compensation circuit etc. (not shown).

In order to arrange the LED light-emitting module 10 on the substrate 20, a pattern composed of electronic paste (such as copper paste or silver paste) can be printed on the surface of the substrate 20, and the pattern corresponds to the wiring 210 and the pattern area 111-114. area (hereinafter also referred to as the contact area). Then, through high temperature sintering, the wiring 210 and the contact area are formed on the surface of the substrate. Finally, the pattern areas 111 - 114 of the metal carrier 110 are fixed to the contact areas on the surface of the substrate 20 by thermal fusion. In this embodiment, the metal carrier 110 can be made of materials such as copper, aluminum and their alloys. Preferably, a layer of metal or alloy with a lower melting point can be formed on the surface of the pattern areas 111-114 in contact with the substrate 20. layer to facilitate thermal fusion.

Fig. 3 is a flow chart of manufacturing an LED lighting module according to an embodiment of the present invention. 4A-4C are schematic diagrams of the manufacturing process of the LED light emitting module shown in FIG. 3 . The manufacturing method of this embodiment is described by taking the LED lighting module shown in FIG. 1 as an example.

In step S310, first make or provide an LED bracket template. FIG. 4A is a schematic diagram of an exemplary LED bracket. The LED bracket template 30 shown in FIG. 4A includes a metal template and a plurality of frames 130 .

Fig. 4B is a schematic diagram of the metal template in the LED bracket template shown in Fig. 4A. Referring to FIG. 4B , the metal template 40 includes a plurality of pattern units 410 arranged in a matrix and a common area 420 connected to the pattern units 410 . In this embodiment, each pattern unit 410 includes pattern areas 411-414, wherein the pattern areas 411 and 414 will be used as electrode areas or pins of the LED light-emitting module to provide the LED core with an external electrical interface, and the pattern areas 412 and 413 are located between pattern areas 411 and 414 . The common area 420 includes a frame 421 and a plurality of connection areas 422, wherein the frame 421 surrounds the pattern unit 410, the two ends of each connection area 422 are connected to the frame 421, and the middle part contains a plurality of long and narrow bars extending in a direction perpendicular to the longitudinal direction. These elongated areas are in contact with the pattern regions 411 and 414 of the pattern unit 410 , so that two adjacent rows of pattern units are indirectly connected together through the connecting region 422 . At the same time, the pattern regions 412 of two adjacent pattern units in the same row are connected together or connected to the frame 421, and the pattern regions 413 of two adjacent pattern units in the same row are also connected together or connected to the frame border421. In the metal template shown in FIG. 4B , the pattern regions 411 - 414 of each pattern unit 410 are not connected to each other, that is, they are not directly connected together. However, since the pattern areas 411-414 are all connected to the common area 420, their relative positions are fixed.

The frame 130 is made of insulating material such as plastic, which is fixed on the surface of each pattern unit 410 of the metal template. In order to keep the positional relationship between the pattern areas 411-414 fixed after the pattern unit 410 is separated from the common area 420, as shown in FIG. It is realized by injecting the plastic frame and the pattern unit 410 together. In this embodiment, the frame 130 helps to restrict the flow of the transparent silicone during the subsequent step of coating the transparent silicone on the LED die.

In the embodiment shown in FIG. 1 , both the P-type electrode and the N-type electrode of the LED die are located on the lower surface, and each LED die is respectively arranged on a pair of adjacent pattern regions. To this end, in step S420, for each pattern unit 410, LED dies 120A-120C may be arranged on adjacent pattern areas with the layout shown in FIG. The die is fixed on the adjacent pattern area, wherein the P-type electrode and the N-type electrode are respectively soldered on the adjacent pattern area.

Then enter step S330 , inject transparent silicone into the frame 130 to encapsulate the LED dies 120A- 120C, thereby completing the manufacture of the LED lighting module. In order to change the color of the light emitted by the LED lighting module, in this embodiment, phosphor powder can be mixed into the injected transparent silica gel. However, in order to save the amount of fluorescent powder, in step S330 , each LED tube core can be covered with fluorescent powder first, and then transparent silica gel can be injected into the frame 130 .

Subsequently, in step S340, the metal template 40 is cut along the dot-dash line in FIG. 4B to separate the pattern unit 410 from the common area 420, thereby obtaining an LED lighting module. FIG. 4C is a schematic diagram of one of the cut LED lighting modules. In the LED lighting module, the pattern areas 411-414 are not connected to each other, but since the pattern areas are all fixed with the frame 130, their relative positions are fixed. Due to the injection of transparent silica gel, the internal structure of the LED lighting module is not shown in FIG. 4C.

In this embodiment, since the interconnection between the LED dies and the connection between them and the pattern area do not need wires, the wire bonding step can be omitted, thereby reducing the manufacturing cost.

5A and 5B are schematic diagrams of a light emitting diode (LED) lighting module according to another embodiment of the present invention, wherein FIG. 5A is a top view of the LED lighting module, and FIG. 5B is a schematic plan view of the metal carrier in FIG. 5A . Compared with the embodiment described above with reference to FIG. 1 , the main difference of this embodiment lies in the pattern shape of the metal carrier, which will be further described below. For other aspects, the present embodiment can adopt various features of the foregoing embodiments, and thus will not be described in detail.

The LED lighting module 50 shown in FIG. 5A also includes a metal carrier 510 , a plurality of LED dies 520A- 520C and a frame 530 . The metal carrier 510 includes pattern areas 511, 512, 513, and 514 that are not connected to each other. As shown in FIG. A pair of pins electrically connected to the external circuit, and the pattern areas 512 and 513 serve as bridge areas. The P-type electrodes and N-type electrodes of the LED dies 520A- 520C are also disposed on the lower surface, and each LED die is respectively disposed on a different pattern area by means of a flip-chip process. Specifically, the LED die 520A is located on the pattern area 511 and the pattern area 512 at the same time, and its P-type electrode and N-type electrode are soldered to the pattern area 511 and the pattern area 512 respectively. Similarly, the LED die 520B is located on the pattern areas 512 and 513 at the same time, and its P-type electrode and N-type electrode are soldered to the pattern areas 512 and 513 respectively. The LED die 520C is located on the pattern area 513 and the pattern area 514 at the same time, and its P-type electrode and N-type electrode are soldered to the pattern area 513 and the pattern area 514 respectively. Thus, the LED dies can be connected in series between the pins 511 and 514 without the aid of wires.

In this embodiment, the pattern areas 511 - 514 are fixed together with the frame 530 made of insulating material (such as plastic) through injection molding process, so as to maintain a certain relative positional relationship.

In this embodiment, transparent silica gel mixed with phosphor powder is injected into the frame 530 to encapsulate the LED die and lead wires. Optionally, the coating of phosphor powder and transparent silica gel can also be performed separately.

FIG. 6 is a schematic diagram of a light emitting diode (LED) lighting module according to another embodiment of the present invention. Compared with the embodiment described above with reference to FIGS. 1 and 5 , the main difference of this embodiment lies in the pattern shape of the metal carrier plate and the connection method of the LED dies, etc., which will be further described below. For other aspects, the present embodiment can adopt various features of the foregoing embodiments, and thus will not be described in detail.

As shown in FIG. 6, the LED lighting module 60 includes a metal carrier 610, a plurality of LED dies 620 and a frame 630. The metal carrier 610 includes a pair of first pattern regions 611, 612 and a second pattern region 613 between the first pattern regions, wherein each of the first pattern regions 611 and 612 includes elongated regions 611A and 612A as A pair of pins of the LED lighting module, and the LED die 620 are fixed on the second pattern area 613 by eutectic welding technology, for example. In this embodiment, the P-type electrode and the N-type electrode of the LED die 620 are disposed on the upper surface, and the LED dies are connected together and connected to the first pattern areas 611 and 612 by wires 640 . In this embodiment, in addition to carrying the LED die 620 , the second pattern area 613 also provides electrical connections for the LED die. Specifically, in FIG. 6 , for the LED dies located at the lower left corner and the upper right corner in the figure, one electrode of each die is electrically connected to the second pattern area 613 via a wire 640 . Since the second pattern area 613 is a connected area, an electrical connection is realized between the LED dies in the lower left corner and the upper right corner, thereby sequentially connecting all the LED dies in series between the pins 611A and 612A. The frame 630 made of insulating material (such as plastic) is fixed together with the first and second pattern regions and encloses the LED die 620 therein, for example by injection molding process. When both the first and second pattern areas are fixed on the frame 630, the relative positional relationship between them is fixed. In order to prevent the LED die 620 and the leads 640 from being directly exposed to the air, transparent silicone can be injected into the frame 630 to encapsulate them. Similarly, fluorescent powder can be mixed into the injected transparent silica gel to change the color of the light emitted by the LED light emitting module. Optionally, the coating of phosphor powder and transparent silica gel can be performed separately, that is, each LED die 620 is covered with phosphor powder and then transparent silica gel is injected into the frame 630 .

It is worth pointing out that although the LED dies are shown here connected together in series, they could also be connected in parallel. For example the two electrodes of each LED die in FIG. 6 can be connected directly between pins 611A and 612A, forming a parallel connection.

Fig. 7 is a schematic diagram of a method for installing an LED lighting module on a heat dissipation substrate according to another embodiment of the present invention. In this embodiment, the LED lighting module shown in FIG. 6 is taken as an example to describe the connection method between the LED unit and the heat dissipation substrate, and the heat dissipation substrate is made of metal or electrically non-insulating heat-conducting plastic. However, it will be recognized that the method described here is also applicable to LED lighting modules with other structures.

The light emitting module 60 is disposed on the heat dissipation substrate 70 , wherein the second pattern area 613 is in surface contact with the heat dissipation substrate 70 to transfer the heat generated by the LED dies to the heat dissipation substrate 70 . At the same time, through holes 710A and 710B are opened in areas corresponding to the first pattern areas 611 and 612 on the heat dissipation substrate 70, so that the first pattern areas 611 and 612 can be located in or above the through holes, thereby avoiding interference with heat dissipation. direct contact with the substrate 70 . In FIG. 7 , the internal structure of the LED lighting module is not shown because the frame 630 is injected with silicone. Referring to FIG. 7 , pins 611A and 612A extend from frame 640 and are located within through holes 710A and 710B, respectively.

On the other hand, external circuits (not shown) such as electrostatic protection circuit, LED driving power supply and control compensation circuit can be arranged under the heat dissipation substrate 70, and their output pins can pass through the through hole 710A from bottom to top. and 710B are electrically connected to the pins 611A and 612A of the LED lighting module.

In order to arrange the LED light emitting module 60 on the metal heat dissipation substrate, a layer of low melting point metal layer or alloy layer can be coated on the surface of the substrate corresponding to the second pattern area of the LED light emitting module, and then the first layer can be made by thermal fusion. The second pattern area is in surface contact with the metal heat dissipation substrate.

In addition, in this embodiment, it may be considered to coat the surface of the heat dissipation substrate 70 with an infrared radiation material to further enhance the heat dissipation capability.

Although some aspects of the present invention have been shown and discussed, those skilled in the art should appreciate that the above-mentioned aspects can be changed without departing from the principle and spirit of the present invention, so the scope of the present invention will be determined by the claims and equivalent content.

Claims (10)

1. light-emitting diode (LED) light emitting module, comprising:

Metal support plate, it comprises a plurality of mutual disconnected pattern area;

At least one LED tube core, it comprises the electrode bottom being formed at and is arranged in different described pattern area, and wherein, described electrode is connected respectively in one of them of different pattern area; And

The framework of being made by insulating material, itself and described pattern area are fixed together.

2. LED light emitting module as claimed in claim 1, described framework surrounds described LED tube core.

3. LED light emitting module as claimed in claim 1 or 2, wherein, covers the transparent silica gel that is mixed with fluorescent material on described LED tube core.

4. LED light emitting module as claimed in claim 1 or 2, wherein, covers fluorescent material and transparent silica gel on described LED tube core successively.

5. manufacture a method for LED light emitting module as claimed in claim 1, comprise the following steps:

LED support is provided, it comprises metal form and a plurality of framework of being made by insulating material, described metal form comprises public area and a plurality of pattern unit, and wherein, described in each, pattern unit is fixed together with framework described in one of them and comprises the pattern area that a plurality of and described public area is connected;

For pattern unit described in each, a plurality of LED tube cores are arranged in different pattern area, wherein, the electrode that is positioned at described LED die bottom is connected respectively in one of them of different pattern area; And

Pattern unit described in each is cut down from described public area, so that described pattern area is not communicated with mutually.

6. method as claimed in claim 5, wherein, is arranged on described LED tube core in different pattern area by flip chip technique.

7. method as claimed in claim 5, wherein, is fixed together pattern unit described in each and described framework by noting compression technology.

8. a method of light-emitting diode (LED) is set on insulating heat-conductive substrate, comprises the following steps:

LED light emitting module is provided, this LED module comprises the framework of being made by insulating material, a plurality of mutual disconnected metal pattern area and at least one LED tube core, described metal pattern area and described framework are fixed together, described LED tube core is arranged on different metal pattern area, wherein, the electrode that is positioned at described LED die bottom is connected respectively in one of them of different metal pattern area, and at least two regions that comprise as the external pin of described LED tube core in described metal pattern area; And

Described metal pattern area is fixed on to the surface of described insulating heat-conductive substrate, wherein, described insulating heat-conductive substrate surface is formed with the wiring layer being electrically connected with the described region that is used as the external pin of LED tube core.

9. a method of light-emitting diode (LED) is set on nonisulated heat-radiating substrate, comprises the following steps:

LED light emitting module is provided, this LED light emitting module comprises framework, at least one pair of first metal pattern area, the second metal pattern area and at least one LED tube core, described the first and second metal pattern area are not communicated with mutually and are fixed together with described framework, wherein, described the first metal pattern area is as electrode district, described LED tube core is arranged on described the second metal pattern area, and by lead-in wire, described LED tube core and described the first metal pattern area is electrically connected together; And

Described the second metal pattern area is welded on to the surface of described nonisulated heat-radiating substrate, and makes described the first metal pattern area be positioned at inside or the top of the through hole on described nonisulated heat-radiating substrate.

10. method as claimed in claim 9, wherein, described nonisulated heat-radiating substrate is made by metal or electric uninsulated heat-conducting plastic.

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