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CN103563497B - Method of attachment, the manufacture method of connector and connector - Google Patents

Method of attachment, the manufacture method of connector and connector Download PDF

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Publication number
CN103563497B
CN103563497B CN201280027638.3A CN201280027638A CN103563497B CN 103563497 B CN103563497 B CN 103563497B CN 201280027638 A CN201280027638 A CN 201280027638A CN 103563497 B CN103563497 B CN 103563497B
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CN
China
Prior art keywords
mentioned
light
binding agent
intensity
illumination
Prior art date
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Active
Application number
CN201280027638.3A
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Chinese (zh)
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CN103563497A (en
Inventor
林慎
林慎一
田中祐治
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Dexerials Corp
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Dexerials Corp
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Publication of CN103563497A publication Critical patent/CN103563497A/en
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Publication of CN103563497B publication Critical patent/CN103563497B/en
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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83868—Infrared [IR] curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83874—Ultraviolet [UV] curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Combinations Of Printed Boards (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

While realizing installing the low temperature of temperature, guarantee connection reliability.Have linking objective thing and connected object, fit via the binding agent of light-cured type, and by binding agent is irradiated light, make binding agent solidify, the operation being attached with connected object by linking objective thing, makes the intensity of illumination of light rise continuously or hierarchically.

Description

Method of attachment, the manufacture method of connector and connector
Technical field
The present invention relates to employ the method for attachment of the binding agent of light-cured type, by the binding agent connection of light-cured type The manufacture method of connector and the connector manufactured by the binding agent of light-cured type.
The application wanted based on Japanese patent application No. Patent 2011-126642 of Japanese publication by June 6th, 2011 Seek priority, and by referring to this application, be applied at the application.
Background technology
Up to the present, as the bonding that the electronic unit of substrate Yu IC chip, flexible flat cable etc. is attached Agent, uses the binding agent of ultraviolet hardening.The binding agent of ultraviolet hardening is to apply between substrate and electronic unit, And carry out solidifying the binding agent realizing substrate with the connection of electronic unit by irradiation ultraviolet radiation.Gluing of this ultraviolet hardening Mixture, different from the binding agent of thermohardening type, owing to substrate, electronic unit not being carried out the operation that heating presses, so not There is the bending that caused by the heating of substrate, be suitable to the connection of substrate to slimming in recent years.It addition, ultraviolet hardening Binding agent is not also by the damage of the thermal conductance cause to substrate, electronic unit.
On the other hand, the connector using the binding agent of ultraviolet hardening to connect, there are the feelings of connection reliability deterioration Condition.Such as, in the case of being constantly exposed to hot and humid environment chronically etc., on the connection resistance of substrate and electronic unit Rise.
Prior art literature
Patent documentation
Patent documentation 1: JP 2000-597378 publication.
Summary of the invention
The technical problem to be solved
Then, it is an object of the invention to, it is provided that a kind of binding agent using light-cured type can ensure that connection reliability Method of attachment, the manufacture method of connector and the connector manufactured by this method of attachment.
For solving the technical scheme of technical problem
In order to solve above-mentioned technical problem, relate to the method for attachment of the present invention, have linking objective thing with connected Object, fits via the binding agent of light-cured type, and by above-mentioned binding agent is irradiated light, makes above-mentioned binding agent solid Change, the operation that above-mentioned linking objective thing is attached with above-mentioned connected object, make the intensity of illumination of above-mentioned light continuously Or hierarchically rise.
It addition, relate to the manufacture method of the connector of the present invention, have linking objective thing and connected object, via The binding agent of light-cured type is fitted, and by above-mentioned binding agent is irradiated light, makes above-mentioned binding agent solidify, by above-mentioned connection The operation that object is attached with above-mentioned connected object, makes the intensity of illumination of above-mentioned light rise continuously or hierarchically.
It addition, relate to the connector of the present invention, have linking objective thing and connected object, via light-cured type Binding agent is fitted, and by above-mentioned binding agent is irradiated light, makes above-mentioned binding agent solidify, by above-mentioned linking objective thing with upper State the operation that connected object is attached, make the intensity of illumination of above-mentioned light rise continuously or hierarchically and be connected.
Invention effect
According to the present invention, by making the irradiation dose of light be gradually increasing, make the solidification of adhesive resin at the initial stage that light irradiates Carrying out of reaction is slow, makes the curing reaction of adhesive resin carry out hastily in the later stage that light irradiates.This is because, when from light When the initial stage irradiated implements strong intensity of illumination, become the reaction starting point of adhesive resin and become short heat-resisting of too much molecular link Property deterioration solidfied material.In the present invention, the initial stage owing to irradiating at light was irradiated with more weak intensity of illumination, in the later stage Intensity of illumination becomes strong, so the solidfied material that thermostability is strong can be made, and can improve connection reliability.
Accompanying drawing explanation
Fig. 1 is to represent the erecting device by being suitable for the method for attachment relating to the present invention, installs IC on the glass substrate The sectional view of the operation of chip and flexible base board；
Fig. 2 is the sectional view representing anisotropic conducting film.
Detailed description of the invention
Below, to being suitable for the method for attachment of the present invention, the manufacture method of connector and connector, referring to the drawings While being described in detail.Additionally, the present invention is not to be only defined in the invention of following embodiment, certainly without departing from In the range of the main points of the present invention, various changes is possible.
Below, as linking objective thing and connected object, although say in case of connecting electronic unit Bright, but this technology also can be suitably used for outside the connection of electronic unit.Such as, carry out on the glass substrate of display panels The so-called COG(chip on glass of the IC chip of liquid crystal drive is installed) install.As this display panels 10, as Shown in Fig. 1, the transparency carrier 11,12 of two pieces be made up of glass substrate etc. arranged opposite, and by the sealing device 13 of frame-shaped These transparency carriers 11,12 bonded to each other.And then, as display panels 10, by by transparency carrier 11,12 around Enclose liquid crystal 14 in space and form panel display unit 15.
As transparency carrier 11,12, at two mutually opposing inner surfaces, by ITO(tin indium oxide) etc. the striped that constitutes A pair transparency electrode 16,17 of shape is formed in cross one another mode.
And then, as two transparency electrodes 16,17, it is made up of as liquid this crossover sites of these two transparency electrodes 16,17 The pixel of the least unit of brilliant display.
In two transparency carriers 11,12, transparency carrier 12 formed than transparency carrier 11 planar dimension of another side Greatly, at the edge part 12a of the transparency carrier 12 being formed greatly, it is provided with the electronic unit 18 of installation liquid crystal drive IC etc. COG installation portion 20, it addition, near the outside of COG installation portion 20, be provided with and install the flexible base defining liquid crystal display drive circuit The FOG installation portion 22 of plate 21.
Additionally, liquid crystal drive IC, liquid crystal display drive circuit are by applying liquid crystal drive voltage to pixel selection, can make The alignment portion ground change of liquid crystal carries out the liquid crystal display specified.
In each installation portion 20,22, it is formed with portion of terminal 17a of transparency electrode 17.In portion of terminal 17a, as conduction Property binding agent use anisotropic conducting film 1 connect the electronic unit 18 of liquid crystal drive IC etc., flexible base board 21.Respectively Anisotropy conductive film 1 is containing electroconductive particle 4, and is to make electronic unit 18, the electrode of flexible base board 21 and be formed at Portion of terminal 17a of the transparency electrode 17 of the edge part 12a of bright substrate 12, the thin film being electrically connected via electroconductive particle 4.Should Anisotropic conducting film 1 is the binding agent of ultraviolet hardening and thermohardening type, by by heating press head 30 described later heat By ultraviolet radiation device 31 irradiation ultraviolet radiation while pressure, electroconductive particle 4 is at portion of terminal 17a and electronic unit, flexible base board Between each electrode of 21 with crushing state cured, make transparency carrier 12 and electronic unit 18, flexible base board 21 connect.
It addition, in two transparency electrodes 16,17, be formed with the alignment films 24 of the friction treatment having implemented regulation, and lead to Cross this alignment films 24 and limit the initial stage orientation of liquid crystal molecule.And then, in the outside of two transparency carriers 11,12, it is equipped with a pair Polarizer 25,26, and by these two Polarizers 25,26 limit light source (not shown) from backlight etc. through light Direction of vibration.
[anisotropic conducting film]
Anisotropic conducting film 1, as shown in Figure 2, it is common that on the stripping film 2 become base material, be formed with electric conductivity Particle contains the thin film of layer 3.Anisotropic conducting film 1, is situated between as it is shown in figure 1, be used in by making electroconductive particle contain layer 3 Between transparency electrode 17 and electronic unit 18, flexible base board 21 on the transparency carrier 12 being formed at display panels 10, Display panels 10 is attached with electronic unit 18 or flexible base board 21 and turns on.
As stripping film 2, the most poly-terephthaldehyde commonly used in anisotropic conducting film (ACF) can be used The base material of acetoacetic ester thin film etc..
It is the layer of dispersed electro-conductive particle 4 in binding agent that electroconductive particle contains layer 3.Binding agent is containing film forming The binding agent of resin, curable resin, firming agent, silane coupling agent etc., with common anisotropic conducting film use Binding agent is identical.
As the resin that film-forming resin, preferably mean molecule quantity are 10000～about 80000.As film-forming resin, can arrange Enumerate the various resins of phenoxy resin, epoxy resin, Shape-changeable ring epoxy resins, polyurethane resin etc..Wherein, from film-forming state, From the viewpoint of connection reliability etc., particularly preferred phenoxy resin.
As curable resin, it is not particularly limited, epoxy resin, acrylic resin etc. can be listed.
As epoxy resin, not particularly restricted, can properly select according to purpose.As concrete example, such as, can list Naphthalene type epoxy resin, connection (two) benzene-type epoxy resin, phenol novolac type epoxy resin, bisphenol-type epoxy resin, equal hexichol generation alkene Type epoxy resin, tritan. type epoxy resin, benzene aralkyl-type epoxy resin, naphthol type epoxy resin, dicyclopentadiene Type epoxy resin, triphenylmethane type epoxy resin etc..These both can be independent, it is also possible to is combination of more than two kinds.
As acrylic resin, not particularly restricted, can properly select according to purpose, as concrete example, such as, can enumerate Go out methacrylate, ethyl acrylate, isopropylacrylic acid ester, isobutyl acrylate, epoxy acrylate, ethylene glycol third Olefin(e) acid ester, diethylene glycol 3,4-acrylate, trimethylolpropane trimethacrylate, dimethylol urea tricyclohexyl phosphate acrylic acid Ester, Aronix M 240,2-hydroxyl-1,3-bis-acryloxy propane, 2,2-bis-[4-(acryloyl methoxyl group) phenyl ］ Propane, 2,2-bis-[4-(acryloyloxyethyl) phenyl propane, Cyclaprop acrylate, tricyclohexyl phosphate propylene Acid esters, three (acryloyl ethyl group) cyanurate, urethane acrylate, epoxy acrylate etc..These both can be single Solely, it is also possible to be combination of more than two kinds.
As firming agent, not particularly restricted, can properly select according to purpose, but be epoxy resin at curable resin In the case of, preferred cationic class firming agent, in the case of curable resin is acrylic resin, preferably radical type solidification Agent.
As cationic firming agent, not particularly restricted, can properly select according to purpose, such as, can list sulfonium salt, Salt etc., among these, optimization aromatic sulfonium salt.As radical type firming agent, not particularly restricted, can according to purpose suitably Select, such as, organic peroxide can be listed.
As silane coupling agent, epoxies, amino, sulfydryl sulfur class, ureide derivative etc. can be listed.Even by adding silane Mixture, can improve organic material and the cohesive in the interface of inorganic material.
As electroconductive particle 4, any one the electric conductivity grain known used in anisotropic conducting film can be listed Son.As electroconductive particle 4, can list such as, the various metals of nickel, ferrum, copper, aluminum, stannum, lead, chromium, cobalt, silver, gold etc. or gold Belong to the particle of alloy, at the surface clad of particle of metal-oxide, carbon, graphite, glass, pottery, plastics etc. Particle, or, at the particle etc. of the surface of these particles further coated insulation thin film.At the Surface coating gold being resin particle In the case of the particle belonged to, as resin particle, can list such as, epoxy resin, phenol aldehyde resin, acrylic acid tree Fat, the grain of the third second light benzene ethylene (AS) resin, benzoguanamine resin, divinylbenzene resinoid, styrene resin etc. Son.
[method of attachment]
It follows that to electronic unit 18, flexible base board 21 is saturating transparency carrier 12 via anisotropic conducting film 1 The operation connected on prescribed electrode 17 illustrates.First, anisotropic conducting film 1 is glued in transparency electrode 17 temporarily Close.As the method for temporary adhesion anisotropic conducting film 1, in the transparency electrode of the transparency carrier 12 of display panels 10 On 17, contain in the way of layer 3 becomes transparency electrode 17 side by electroconductive particle, configure anisotropic conducting film 1.
And then, transparency electrode 17 is configured with after electroconductive particle contains layer 3, by from stripping film 2 side, such as With heating press head 30, electroconductive particle being contained layer 3 to carry out heating and pressurizeing, heating press head 30 leaves from stripping film 2, The stripping film 2 electroconductive particle from transparency electrode 17 is contained layer 3 peel off, only electroconductive particle is contained layer 3 transparent Temporary adhesion on electrode 17.As temporary adhesion based on heating press head 30, by the upper surface of stripping film 2 by small pressure Power (such as about 0.1MPa～2MPa) heats while transparency electrode 17 side presses.But, heating-up temperature is set to The temperature (such as 70 of the thermosetting resin not state of cure of epoxy resin in anisotropic conducting film 1, acrylic resin etc. ～about 100 DEG C).
It follows that contain via electroconductive particle with the transparency electrode 17 of transparency carrier 12 and the electrode terminal of electronic unit 18 There is the mode that layer 3 is opposed, configure electronic unit 18.
It follows that utilize the heating press head 30 of heating-up temperature being warmed up to regulation, by the upper surface of electronic unit 18 with The temperature of regulation and the pressure of regulation carry out heat heating.Hot pressed temperature based on heating press head 30 is set to relatively represent Solidification starts temperature ± 10 of the regulation that front electroconductive particle contains viscosity (lowest melt viscosity) when layer 3 melts～20 DEG C Temperature (such as, before and after 120 DEG C).Thus, the bending of transparency carrier 12 is suppressed to minimum, it addition, electronic unit also will not be given 18 increase the damage caused based on heat.
After electronic unit 18 is pressed by heating press head 30, by being arranged at the ultraviolet of the rear side of transparency carrier 12 Anisotropic conducting film 1 irradiation ultraviolet radiation given by irradiator 31.By the ultraviolet of ultraviolet radiation device 31 luminescence, through supporting thoroughly The transparent support platform of the glass etc. of bright substrate 12 and the transparency carrier 12 supported by this support platform contain layer 3 to electroconductive particle and enter Row irradiates.As this ultraviolet radiation device 31, finsen lamp, metal halide lamp, LED etc. can be used.
By heating based on this heating press head 30 and ultraviolet based on ultraviolet radiation device 31, anisotropic conductive There is curing reaction in thin film 1, thus, is carried out by electronic unit 18 formal via anisotropic conducting film 1 in portion of terminal 17a Bonding.Heat pressurization based on heating press head 30 and ultraviolet based on ultraviolet radiation device 31 irradiate and terminate or one previous simultaneously Rear end.
In this technique, while pressing electronic unit 18 by heating press head 30, shone by ultraviolet radiation device 31 Penetrate ultraviolet.Now, ultraviolet radiation device 31, make irradiation dose increase to grade formula.It addition, in this technique, it is preferably, passes through After heating press head 30 has pressed electronic unit 18, after have passed through the stipulated time, start irradiation ultraviolet radiation.
By being made irradiation dose rise by ultraviolet radiation device 31 grade formula, at the initial bond agent resin that ultraviolet irradiates Curing reaction carry out slow, ultraviolet irradiate later stage make the curing reaction of adhesive resin carry out hastily.This is Because when the initial stage irradiated from ultraviolet implements strong intensity of illumination, the reaction starting point that will become adhesive resin becomes Obtain the solidfied material of the short thermostability deterioration of too much molecular link.In this technique, owing to the initial stage irradiated at ultraviolet is with more weak Intensity of illumination be irradiated, become strong in later stage intensity of illumination, so the solidfied material that thermostability is outstanding can be made, and can realize on limit Installing the low temperature of temperature, connection reliability is improved on limit.Additionally, the intensity of illumination of ultraviolet is divided into multiple grade and is incremented by, And can suitably set number of degrees according to total irradiation dose of ultraviolet, irradiation time etc., it is preferred that be set as 2～10 etc. Level.
By making heat pressurization based on heating press head 30 irradiate in ultraviolet in advance, make anisotropic conducting film 1 Electroconductive particle contains layer 3 liquidation, and between the transparency electrode 17 and the electrode terminal of electronic unit 18 of transparency carrier 12 Make adhesive resin flow out, electroconductive particle 4 can be clamped.When making adhesive resin liquidation by heat pressurization, logical Cross irradiation ultraviolet radiation while making heat pressurization continue further, at transparency electrode 17 and the electricity of electronic unit 18 of transparency carrier 12 Electroconductive particle can be made to contain layer 3 under the state that extreme sub-folder holds electroconductive particle 4 to solidify.
Additionally, after the heating pressing of electronic unit based on heating press head 30, have passed through stipulated time, preferably After being about 1～10 second, irradiation ultraviolet radiation.It addition, in the period of irradiation ultraviolet radiation, it is also possible to continuously or intermittently add The pressing of hot press head 30.
As irradiation time based on ultraviolet radiation device 31, irradiate grade and irradiation dose, total irradiation dose, from binding agent The composition of resin, hot pressed temperature, pressure and time of based on heating press head 30, the curing reaction setting binding agent is the highest The condition that effect ground is carried out.
Such as, the preferred scope of irradiation dose is 500～3000mJ/sec, and the preferred scope irradiating grade is set to 2～10 grades.Additionally, it is preferred that be, (irradiation dose of final grade)/(irradiation dose of the first estate) is set to 4～10.
After electronic unit 18 is connected in the transparency electrode 17 of transparency carrier 12, similarly carry out at transparency carrier The so-called FOG(film on glass of flexible base board 21 is installed in the transparency electrode 17 of 12) install.Now, ultraviolet irradiates Device 31, presses flexible base board 21 by heating press head 30, and opens after have passed through the stipulated time (such as about 1～10 second) Beginning irradiation ultraviolet radiation.It addition, in the period of irradiation ultraviolet radiation, it is also possible to continuously or intermittently carry out heating press head 30 by Pressure.It addition, ultraviolet radiation device 31 grade formula makes irradiation dose rise.
Thus, can manufacture and be connected to transparency carrier 12 and electronic unit 18, flexible base board via anisotropic conducting film 1 The connector of 21.Additionally, these COG install and FOG installs, it is also possible to irradiate one by heat pressurization once and ultraviolet and go forward side by side OK.
Above, although the COG directly installing liquid crystal drive IC on the glass substrate of display panels is installed and The FOG installation directly installing flexible base board on the substrate of display panels is illustrated as an example, but this technology Other various connections outside COG installation, FOG can be used to install.
Particularly, in the case of the electronic unit of substrate Yu IC chip, flexible flat cable etc. is attached, in order to really Protect connection reliability, currently also have and with ultraviolet curing and the method for attachment of heat cure, in this case it is necessary to prevent base The bending of substrate, the damage of electronic unit in heat pressurization.
Such as, in the case of COG installs IC chip on the glass substrate used in LCD, it is susceptible to glass base The installation region of plate peripheral part narrowing, by the slimming of glass substrate, be susceptible to glass substrate based on heat pressurization Bending.When bending in glass substrate, will be at the liquid crystal panel generation irregular colour of COG installation region periphery. The bending of this glass substrate, because resulting from the IC chip difference with the coefficient of thermal expansion of glass substrate, it requires and installs the low of temperature Wen Hua, it also requires prevent the reduction of connection reliability.
According to this technology, by making the irradiation dose of light rise monotonously, in the solidification of the initial bond agent resin that light irradiates Carrying out of reaction is slow, makes the curing reaction of adhesive resin carry out hastily in the later stage that light irradiates, thus can make heat-resisting The solidfied material that property is outstanding.That is, according to this technology, it is not necessary to the high-temperature heating needed for heat cure, and only thin with anisotropic conductive Film melted in required MIN heating realize installing the low temperature of temperature, thus can prevent bending same of substrate Time, it is ensured that connection reliability.
[other]
It addition, this technology is in addition to using the conductive adhesive of above-mentioned ultraviolet hardening, could be used that such as Light by other wavelength of infrared light etc. carries out the conductive adhesive of the light-cured type solidified.
In above-mentioned record, although as anisotropic conducting film to having film shape of the binding agent of electric conductivity 1 is illustrated, even if being that pasty state is the most no problem.In this application, by the anisotropic conductive containing electroconductive particle 4 The laminar conductive adhesive film of thin film 1 grade or the conductive adhesive of pasty state are stuck with paste and are defined as " binding agent ".
It addition, in above-mentioned record, although employing under room temperature is solid phase, by adding the conductive adhesive of heat fusing Agent but it also may use the conductive adhesive under room temperature with mobility.In this case, heating is not necessary bar Part, and COG installation portion 20, FOG installation portion coating conductive adhesive, and be configured with electronic unit 18, flexible base board 21 it After, by realizing connection with the pressure of the suitably regulation irradiation ultraviolet radiation that pressurizes.
It addition, in above-mentioned record, although be many grades by ultraviolet irradiation quantitative change and make ultraviolet irradiation amount Rise but it also may make ultraviolet irradiation amount based on ultraviolet radiation device 31 with linear rising.In this case, also examine Consider total irradiation dose and set the intensity of illumination of each irradiation time, and rise in linear manner.Pass through as ultraviolet radiation device 31 Use LED, irradiation time can be made and intensity of illumination is easier hierarchically or linearly rises.
[embodiment]
It follows that the embodiment of this technology is illustrated.As the present embodiment, determine and make ultraviolet irradiation condition Different and the curing reaction rate (%) of adhesive resin in each sample of manufacturing, initial stage conduction resistance value (Ω), hot and humid Conduction resistance value (Ω) after test (85 DEG C/85%RH 500hr) and the amount of bow (μm) of substrate.
Electroconductive particle contain layer with
Phenoxy resin (YP-50: Nippon Steel Chemical Co., Ltd's system)；45 Quality Mgmt Dept
Epoxy resin (EP-828: Mitsubishi chemical Co., Ltd's system)；50 Quality Mgmt Dept
Silane coupling agent (KBM-403: Shin-Etsu Chemial Co., Ltd's system)；1 Quality Mgmt Dept
Firming agent (SI-60L: three new chemical industry Co., Ltd. systems)；4 Quality Mgmt Dept
Electroconductive particle；(AUL704: Sekisui Chemical Co., Ltd's system): 50000/mm2, dispersion is mixed And adjust resin combination, it is fabricated to the cationic curing class electrode adhesion thin slice of thickness 20 μm.
Employ as evaluating element
Profile；1.8mm×20mm
Bulge height；15μm
Evaluation IC.
As evaluating the evaluation base material connected with IC, employ the ITO coating glass that glass thickness is 0.5mm.
Define at this ITO coating glass and contain layer and by evaluation IC heat being pressurizeed and suitable via electroconductive particle Ultraviolet irradiate and the connector sample that connects.As ultraviolet radiation device, employ UV irradiator ZUV-C30H(Omron Co., Ltd.'s system).It addition, in each connector sample carrying out ultraviolet irradiation, total irradiation dose is set to 900mJ, irradiating Time is in the connector sample of 3 seconds, and the beginning of the heat pressurization to evaluation IC based on heating press head 30 is opened after latter 1 second Beginning ultraviolet irradiates, in the connector sample that irradiation time is 4 seconds, with the heat to evaluation IC based on heating press head 30 The beginning of pressurization simultaneously, starts ultraviolet and irradiates.It addition, except comparative example 1, the heating-up temperature of heating press head is set in phase To representing that solidification starts front electroconductive particle and contains the temperature (120 DEG C) ±～40 of the viscosity (lowest melt viscosity) when layer melts DEG C scope.
In embodiment 1, will be set to 120 DEG C based on the heating-up temperature of heating press head, pressure is set to 60MPa, heat pressurization Time is set to 4 seconds.It is divided into 2 grades it addition, ultraviolet is irradiated and carries out between 3 seconds, with UV intensity of illumination in the first estate 100mJ has been carried out 2 seconds, has carried out 1 second with UV intensity of illumination 700mJ in the second grade.
In example 2, will be set to same as in Example 1 based on the heating condition of heating press head.It addition, by ultraviolet Irradiation is divided into 2 grades and carries out between 3 seconds, has carried out 2 seconds with UV intensity of illumination 50mJ in the first estate, in the second grade with UV intensity of illumination 800mJ has carried out 1 second.
In embodiment 3, will be set to same as in Example 1 based on the heating condition of heating press head.It addition, by ultraviolet Irradiation is divided into 2 grades and carries out between 3 seconds, has carried out 1 second with UV intensity of illumination 100mJ, in the first estate in the second grade 2 seconds have been carried out with UV intensity of illumination 400mJ.
In example 4, will be set to same as in Example 1 based on the heating condition of heating press head.It addition, by ultraviolet Irradiation is divided into 3 grades and carries out between 3 seconds, has carried out 1 second with UV intensity of illumination 100mJ at the first estate, in the second grade with UV intensity of illumination 300mJ has been carried out 1 second, has carried out 1 second with UV intensity of illumination 500mJ in the tertiary gradient.
In embodiment 5, will be set to same as in Example 1 based on the heating condition of heating press head.It addition, by ultraviolet Irradiation is divided into 2 grades and carries out between 3 seconds, has carried out 1 second with UV intensity of illumination 50mJ in the first estate, in the second grade with UV intensity of illumination 425mJ has carried out 2 seconds.
In embodiment 6, will be set to same as in Example 1 based on the heating condition of heating press head.It addition, by ultraviolet Irradiation is divided into 3 grades and carries out between 3 seconds, has carried out 1 second with UV intensity of illumination 50mJ in the first estate, in the second grade with UV intensity of illumination 300mJ has been carried out 1 second, has carried out 1 second with UV intensity of illumination 550mJ in the tertiary gradient.
In embodiment 7, will be set to same as in Example 1 based on the heating condition of heating press head.It addition, by ultraviolet Irradiation is divided into 3 grades and carries out between 4 seconds, has carried out 1 second with UV intensity of illumination 50mJ in the first estate, in the second grade with UV intensity of illumination 200mJ has been carried out 2 seconds, has carried out 1 second with UV intensity of illumination 450mJ in the tertiary gradient.
In embodiment 8, will be set to same as in Example 1 based on the heating condition of heating press head.It addition, by ultraviolet Irradiation is divided into 3 grades and carries out between 3 seconds, has carried out 1 second with UV intensity of illumination 100mJ, in the first estate in the second grade Carry out 1 second with UV intensity of illumination 200mJ, in the tertiary gradient, carried out 1 second with UV intensity of illumination 600mJ.
In embodiment 9, will be set as from the eutectic representing adhesive resin based on the heating condition of heating press head The temperature (120 DEG C)-40 DEG C, i.e. 80 DEG C of melt-viscosity, is set to the same as in Example 8 by other condition.
In embodiment 10, will be set as from the eutectic representing adhesive resin based on the heating condition of heating press head The temperature (120 DEG C)-30 DEG C, i.e. 90 DEG C of melt-viscosity, is set to the same as in Example 8 by other condition.
In embodiment 11, will be set as from the eutectic representing adhesive resin based on the heating condition of heating press head The temperature (120 DEG C)+20 DEG C, i.e. 140 DEG C of melt-viscosity, is set to the same as in Example 8 by other condition.
In embodiment 12, will be set as from the eutectic representing adhesive resin based on the heating condition of heating press head The temperature (120 DEG C)+30 DEG C, i.e. 150 DEG C of melt-viscosity, is set to the same as in Example 8 by other condition.
In comparative example 1, will be set to 170 DEG C based on the heating-up temperature of heating press head, pressure is set to 60MPa, heat pressurization Time is set to 4 seconds.It addition, do not carry out ultraviolet irradiation.
In comparative example 2, will be set to same as in Example 1 based on the heating condition of heating press head.It addition, do not carry out purple Outside line is irradiated.
In comparative example 3, will be set to same as in Example 1 based on the heating condition of heating press head.It addition, as ultraviolet Line irradiates condition, has carried out 3 seconds with UV intensity of illumination 300mJ.
In comparative example 4, will be set to same as in Example 1 based on the heating condition of heating press head.It addition, by ultraviolet Irradiation is divided into 2 grades and carries out between 3 seconds, has carried out 2 seconds with UV intensity of illumination 200mJ, in the first estate in the second grade 1 second has been carried out with UV intensity of illumination 500mJ.
In comparative example 5, will be set to same as in Example 1 based on the heating condition of heating press head.It addition, by ultraviolet Irradiation is divided into 2 grades and carries out between 3 seconds, has carried out 2 seconds with UV intensity of illumination 150mJ, in the first estate in the second grade 1 second has been carried out with UV intensity of illumination 600mJ.
In comparative example 6, will be set to same as in Example 1 based on the heating condition of heating press head.It addition, by ultraviolet Irradiation is divided into 2 grades and carries out between 3 seconds, has carried out 1 second with UV intensity of illumination 200mJ, in the first estate in the second grade 2 seconds have been carried out with UV intensity of illumination 350mJ.
In comparative example 7, will be set to same as in Example 1 based on the heating condition of heating press head.It addition, by ultraviolet Irradiation is divided into 2 grades and carries out between 3 seconds, has carried out 1 second with UV intensity of illumination 150mJ, in the first estate in the second grade 2 seconds have been carried out with UV intensity of illumination 375mJ.
To above embodiment and each connector sample of comparative example, contain the epoxy in layer by measuring electroconductive particle The minimizing of ring, determines the response rate (%) that electroconductive particle contains layer.It addition, to each connector sample, use digital versatile Table is determined connection resistance when having flow through electric current 2mA by 4 terminal methods.It addition, to each connector sample, use contact pin type surface Roughness gauge (the little slope research of SE-3H: Co., Ltd. is made) scans from the ITO coating lower glass surface evaluating base material, determines and comments The amount of bow (μm) in the glass substrate face of the ITO coating glass after the connection of valency IC.Measurement result is represented at table 1, table 2 In.
[table 1]
[table 2]
As shown in table 1, table 2, response rate, except comparative example 2, in whole connector samples, become more than 95%.This It is based in embodiment 1～12, comparative example 3～7, in the way of response rate becomes more than 90%, sets hot pressurized conditions The result that (80 DEG C～150 DEG C, 60MPa, 4 seconds), ultraviolet irradiate condition (900mJ, 3 seconds or 4 seconds) and obtain, at comparative example 1 In, only make response rate in the way of becoming more than 90%, set hot pressurized conditions (170 DEG C, 60MPa, 4 seconds) by heat pressurization.
On the other hand, in comparative example 2 because be with ultraviolet is irradiated and be used as premise set embodiment 1～8 identical hot pressurized conditions, and do not carry out ultraviolet irradiation, so response rate step-down is 41%.To this end, at comparative example 2 In, initial stage conduction resistance value uprises as 1.8(Ω), the conduction resistance value after high temperature and humidity test exceedes 100(Ω).
When embodiment 1～12 being compared with comparative example 1, any one electroconductive particle contains layer and illustrates more than 91% Response rate, initial stage conduction resistance value be less than 0.2(Ω), the conduction resistance value after high temperature and humidity test be less than 9.6(Ω) below. On the other hand, in embodiment 1～12, by and with ultraviolet irradiate can will based on heating press head hot pressed temperature suppress For low 80 DEG C～150 DEG C, the bending of glass substrate can be suppressed in 12.4(μm) below.In comparative example 1, due to not and use Ultraviolet irradiates and in order to draw the high response rate (%) that electroconductive particle contains layer, the hot pressed temperature of heating press head is set It is set to high 170 DEG C, so the bending of glass substrate becomes big 16.2(μm).
When embodiment 1～12 being compared with comparative example 3, in comparative example 3, carry out ultraviolet photograph to non-grade formula Penetrate, run through full irradiation time (3 seconds) and carried out ultraviolet irradiation with high intensity of illumination (300mJ/sec).
In such comparative example 3, the conduction resistance value after high temperature and humidity test rises to 20.2(Ω), connection reliability Deterioration.On the other hand, embodiment 1～12, owing to making UV intensity of illumination carry out ultraviolet photograph in the way of rising by grade formula Penetrate, so the conduction resistance value after high temperature and humidity test is also 9.6(Ω) below.Thus, it is known that in comparative example 3, become heat-resisting Property deterioration solidfied material.This is presumably because that the initial stage irradiated from ultraviolet is irradiated with strong UV intensity of illumination, so The reaction starting point just becoming adhesive resin becomes the solidfied material of the short thermostability deterioration of too much molecular link.
When embodiment 1～12 is compared with comparative example 4～comparative example 7, in comparative example 4～comparative example 7, due to The initial stage irradiated from ultraviolet is irradiated with strong UV intensity of illumination (200mJ/sec, 150mJ/sec), so becoming point The solidfied material of the thermostability deterioration that sub-key is short, the conduction resistance value after high temperature and humidity test rises to 13.5(Ω), it is known that with reality Execute example 1～12 and compare connection reliability deterioration.
On the other hand, embodiment 1～12, the conduction resistance value after high temperature and humidity test also can be suppressed to 9.6(Ω) with Under.This is because, owing to the initial stage irradiated at ultraviolet is irradiated with the UV intensity of illumination less than 150mJ/sec, so just Become the solidfied material that the outstanding electroconductive particle of thermostability contains layer.
It follows that be preferably, the UV intensity of illumination in the initial grade that UV irradiates, the ultraviolet in regulation irradiates bar Under part (being 900mJ, 3 seconds or 4 seconds in the present embodiment), it is approximately less than 150mJ/ with the 17%(that is approximately less than of total irradiation dose (900mJ) Sec) intensity of illumination is irradiated.
In addition we know, being preferably, irradiation time based on the UV intensity of illumination in the initial grade that UV irradiates, in regulation Ultraviolet irradiate under condition (being 900mJ, 3 seconds or 4 seconds in the present embodiment), be set to the pact of total irradiation time (3 seconds or 4 seconds) 20～about 40% (about 1 second～2 seconds).
About heating condition based on heating press head, when comparing with embodiment 8～embodiment 12, in embodiment In 9, owing to the temperature (120 DEG C) that heating-up temperature is the lowest melt viscosity relatively representing adhesive resin is low-40 DEG C, so with Other embodiment is compared, owing to the mobility of resin is deteriorated, it is impossible to get rid of adhesive resin between terminal fully, thus high Conduction resistance value after the high wet test of temperature becomes the 9.6(Ω that comparison is high).
It addition, from embodiment 11, embodiment 12, when heating-up temperature represents the minimum melted viscous of adhesive resin relatively When the temperature (120 DEG C) of degree is set to high, compared with other embodiment, the bending of substrate becomes big.
From the foregoing, it will be observed that as heating condition based on heating press head, although can relatively represent that adhesive resin is The scope (80 DEG C～150 DEG C) of the temperature (120 DEG C) of low melting viscosity-40 DEG C～+30 DEG C uses, however, it is preferred to be, in phase To represent adhesive resin lowest melt viscosity temperature (120 DEG C) about-30 DEG C till scope (90 DEG C～120 DEG C attached Closely) use.
The explanation of reference
1 anisotropic conducting film
2 stripping films
3 electroconductive particles contain layer
4 electroconductive particles
10 display panels
11 transparency carriers
12 transparency carriers
13 sealing devices
14 liquid crystal
15 panel display unit
16 transparency electrodes
17 transparency electrodes
17a portion of terminal
18 electronic units
20 COG installation portions
21 flexible base boards
22 FOG installation portions
23 anisotropic conducting films
24 alignment films
25 Polarizers
26 Polarizers
30 heating press heads
31 ultraviolet radiation devices.

Claims (9)

1. a method of attachment, has:
By linking objective thing and connected object, fit via the binding agent of light-cured type,
And by above-mentioned binding agent is irradiated light, make above-mentioned binding agent solidify, by above-mentioned linking objective thing and above-mentioned connected mesh The operation that mark thing is attached,
Risen continuously or hierarchically by the intensity of illumination making above-mentioned light, make the irradiation dose of this light be gradually increasing.
2. according to the method for attachment described in claim 1, wherein,
By heating press head, above-mentioned linking objective thing is carried out heat pressurization with the temperature of regulation and the pressure of regulation,
Within the temperature difference of the lowest melt viscosity of the temperature of above-mentioned regulation and the above-mentioned binding agent of expression is 40 DEG C.
3. according to the method for attachment described in claim 2, wherein,
After having started heat pressurization based on above-mentioned heating press head, irradiate above-mentioned light.
4. according to the method for attachment described in any one of claims 1 to 3, wherein,
The irradiation of above-mentioned light is carried out by 3 grades,
In initial grade, use the irradiation dose less than 17% of total irradiation dose of above-mentioned light.
5. according to the method for attachment described in claim 4, wherein,
Initial grade is 20～the irradiation time of 40% of total irradiation time of above-mentioned light.
6. according to the method for attachment described in any one of claims 1 to 3, wherein,
The irradiation of above-mentioned light is carried out by many grades,
(irradiation dose of final grade)/(irradiation dose of the first estate) is set to 4～10.
7. according to the method for attachment described in any one of claims 1 to 3, wherein,
Above-mentioned binding agent contains electroconductive particle, and is will to be respectively arranged at above-mentioned linking objective thing and above-mentioned connected target The anisotropic-electroconductive adhesive that the electrode of thing is electrically connected each other,
Above-mentioned just ultraviolet.
8. a manufacture method for connector, has:
By linking objective thing and connected object, fit via the binding agent of light-cured type,
And by above-mentioned binding agent is irradiated light, make above-mentioned binding agent solidify, by above-mentioned linking objective thing and above-mentioned connected mesh The operation that mark thing is attached,
Risen continuously or hierarchically by the intensity of illumination making above-mentioned light, make the irradiation dose of this light be gradually increasing.
9. a connector, has:
By linking objective thing and connected object, fit via the binding agent of light-cured type,
And by above-mentioned binding agent is irradiated light, make above-mentioned binding agent solidify, by above-mentioned linking objective thing and above-mentioned connected mesh The operation that mark thing is attached,
Make the irradiation dose of this light be gradually increasing by making the intensity of illumination of above-mentioned light rise continuously or hierarchically thus carry out Connect.
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