CN103560763A - On-chip integrated body wave resonator and manufacturing method thereof - Google Patents

Abstract

The invention discloses an on-chip integrated body wave resonator and a manufacturing method thereof, wherein the body wave resonator comprises: a body wave resonator; at least one energy storage element, wherein at least part of the at least one energy storage element is located in the body The wave resonator is within the range of the projected area in the vertical direction. The present invention integrates the energy storage element into the projection area of the bulk wave resonator in the vertical direction, thereby effectively reducing the integration space of the energy storage element and the bulk wave resonator, which is beneficial to further reducing the size of the bulk wave filter chip.

Description

On-chip integrated bulk wave resonator and manufacturing method thereof

technical field

The present invention relates to the field of semiconductors, and in particular, to an on-chip integrated bulk wave resonator and a manufacturing method thereof.

Background technique

In terms of mobile phone communication and high-speed serial data applications, thin-film piezoelectric bulk wave resonators made of piezoelectric thin-film longitudinal resonance in the thickness direction have become a viable alternative to surface acoustic wave devices and quartz crystal resonators. . The RF front-end bulk wave piezoelectric filter/duplexer provides superior filtering characteristics, including: low insertion loss, steep transition band, large power capacity, strong anti-electrostatic discharge (ESD) ability, etc. High-frequency thin-film piezoelectric bulk wave oscillators have ultra-low frequency temperature drift, and they have low phase noise, low power consumption, and large bandwidth modulation range. In addition, these miniature thin-film piezoelectric resonators use a complementary metal-oxide-semiconductor (CMOS)-compatible process on silicon substrates, which reduces unit cost and facilitates integration of the resonators with CMOS circuits.

A typical thin film piezoelectric bulk wave resonator includes: two metal electrodes (including the top electrode and the bottom electrode), a piezoelectric material, and an acoustic reflection structure, wherein the piezoelectric material is located between the metal electrodes, and the piezoelectric material and the two metal electrodes The sandwich structure is composed of the acoustic reflection structure located under the bottom metal electrode. Usually, the area where the three-layer structure composed of the top electrode, the piezoelectric layer and the bottom electrode overlaps in the thickness direction is defined as the effective area of the resonator. When a voltage signal of a certain frequency is applied between the two metal electrodes, due to the inverse piezoelectric effect of the piezoelectric material between the two metal electrodes, there will be a gap between the top electrode and the bottom electrode in the effective area in the vertical direction. The propagating sound wave is reflected back and forth between the interface between the top electrode and the air and the sound reflection structure under the bottom electrode and resonates at a certain frequency. As shown in Figure 1, it is an existing thin-film piezoelectric bulk wave resonator structure in the prior art. The resonator shown in Figure 1 includes: a top electrode T, a piezoelectric layer P, a bottom electrode B, and an acoustic reflection structure X and substrate S. The step of forming the acoustic reflection structure X of the resonator in Fig. 1 may include:

Step 1, etching a cavity structure on the substrate S;

Step 2, filling the cavity structure with a sacrificial layer material;

Step 3, fabricating the bottom electrode B, the piezoelectric layer P and the top electrode T on the substrate S after surface planarization.

Step 4, removing the sacrificial layer material to form a suspension structure.

In this way, a cavity can be formed under the bottom electrode of the resonator. Since the acoustic impedance ratio between the bottom electrode and the air is very large, the sound wave can be well reflected on the interface between the bottom electrode and the air. Therefore, the resonator can During the working process, the leakage of acoustic wave energy from the inside of the resonator to the substrate is reduced, thereby improving the Q value of the resonator, thereby improving the performance of the filter composed of multiple resonators.

Thin-film piezoelectric bulk wave filters can be formed by connecting thin-film piezoelectric resonators of different frequencies together according to a certain topology. In the design of the filter, it is usually necessary to connect a section of inductor in series with the parallel resonator, as shown in Figure 2 Shown is a schematic diagram of a filter structure connected with an inductor in the prior art. The position of the transmission zero on the left side of the passband of the filter can be changed through the series inductance to obtain better out-of-band suppression, and at the same time, the effective electromechanical coupling factor of the resonator can be increased to achieve the effect of widening the bandwidth.

In duplexer design, it is usually necessary to add an impedance matching network between the receiving filter and the transmitting filter. This part of the circuit can be a π-type network composed of inductors and capacitors, or a quarter-wavelength transmission line. The role of the impedance matching network is to make the receiving filter present a high impedance in the passband frequency band of the transmitting filter, which is beneficial to the transmission of the transmitting channel signal. Usually, energy storage elements such as inductors/capacitors are manufactured on the packaging substrate of the chip, which is realized in the form of chip inductors/capacitors or printed spiral wires, or there is an existing method, in the wafer manufacturing process In this method, the inductor/capacitor and filter are directly integrated on the chip by patterning metal lines, and the inductor/capacitor and the filter are arranged in parallel. However, the common disadvantage of the above methods is that both the inductance and capacitance formed on the packaging substrate or the inductance and capacitance integrated on the chip occupy additional area, which is not conducive to the reduction of the size of the filter chip. Therefore, it cannot adapt to further miniaturization of the chip. requirements of customization.

Aiming at the problem in the related art that the energy storage element in the bulk wave filter chip occupies an additional chip area, which is not conducive to further miniaturization of the chip size, no effective solution has been proposed yet.

Contents of the invention

Aiming at the problem in the related art that the energy storage element in the bulk wave filter chip occupies an additional chip area, which is not conducive to further miniaturization of the chip size, the present invention proposes an on-chip integrated bulk wave resonator and its manufacturing method, which can store The energy components are integrated into the bulk wave resonator, which is beneficial to further reduce the size of the bulk wave filter chip.

Technical scheme of the present invention is realized like this:

According to an aspect of the present invention, an on-chip integrated bulk wave resonator is provided.

The bulk wave resonator consists of:

Bulk wave resonator;

At least one energy storage element, wherein at least part of the at least one energy storage element is located within the range of the projected area of the bulk wave resonator in the vertical direction.

Wherein, the energy storage element includes an energy storage part and an electrode part.

In addition, the bulk wave resonator includes a cavity, and the energy storage part of at least one energy storage element is located in the cavity.

In addition, the above bulk wave resonator further includes:

first electrode;

a second electrode positioned below the first electrode and electrically isolated from the first electrode;

The base is located under the second electrode, and the cavity is formed by the concave surface of the base.

In addition, the above bulk wave resonator further includes:

electrode;

The base is located under the electrodes, and the energy storage part of at least one energy storage element is located between the base and the electrodes.

In addition, the above bulk wave resonator further includes:

electrode;

a substrate, located below the electrodes;

The energy storage portion of at least one energy storage element is located above the electrodes.

Wherein, the bottom of at least one energy storage element is at least partially filled with insulating material or there is a gap.

Optionally, there is a gap and/or insulating material between the conductive part of the bulk wave resonator and the at least one energy storage element.

Preferably, the energy storage element includes a capacitor and/or an inductor.

According to one aspect of the present invention, there is provided a method of manufacturing an on-chip integrated bulk wave resonator.

The manufacturing method includes:

Provide bulk wave resonators;

At least part of the at least one energy storage element is arranged within the range of the projected area of the bulk wave resonator in the vertical direction.

Wherein, the energy storage element includes an energy storage part and an electrode part.

Optionally, a cavity is formed in the bulk wave resonator, and the energy storage portion of at least one energy storage element is disposed in the cavity;

A piezoelectric structure is formed above the cavity, and the piezoelectric structure includes an upper electrode, a piezoelectric layer and a lower electrode.

In addition, when providing a bulk wave resonator, the above manufacturing method further includes:

provide the basis;

disposing the energy storage portion of at least one energy storage element above the substrate;

forming a membrane layer over the at least one energy storage element;

A piezoelectric structure is formed above the membrane layer, and the piezoelectric structure includes an upper electrode, a piezoelectric layer and a lower electrode.

Preferably, the above-mentioned energy storage element includes a capacitor and/or an inductor.

The present invention integrates the energy storage element into the projection area of the bulk wave resonator in the vertical direction, thereby effectively reducing the integration space of the energy storage element and the bulk wave resonator, which is beneficial to further reducing the size of the bulk wave filter chip.

Description of drawings

FIG. 1 is a schematic diagram of a bulk wave resonator in the prior art;

2 is a schematic diagram of a filter structure with an inductor in the prior art;

Fig. 3a is a top view of a bulk wave resonator according to an embodiment of the present invention;

Fig. 3b is a top view of the structure in the cavity of the bulk wave resonator shown in Fig. 3a;

Fig. 3c is a cross-sectional view along the A-A direction in the bulk wave resonator shown in Fig. 3a;

4a to 4j are schematic diagrams of a manufacturing method of an on-chip bulk wave resonator according to an embodiment of the present invention;

5 is a schematic diagram of a bulk wave resonator according to another embodiment of the present invention;

Fig. 6a is a top view of a bulk wave resonator cavity structure integrated with a serpentine inductor structure according to an embodiment of the present invention;

Fig. 6b is a cross-sectional view of the bulk wave resonator shown in Fig. 6a;

Fig. 7 is a schematic diagram of another embodiment of the present invention integrating a capacitor;

Fig. 8a is a schematic diagram of a bulk wave resonator integrated with an inductor according to another embodiment of the present invention;

Fig. 8b is a cross-sectional view of the A-A direction in the bulk wave resonator shown in Fig. 8a;

9 is a cross-sectional view of a bulk wave resonator according to yet another embodiment of the present invention;

10a to 10e are schematic diagrams of a manufacturing method of an on-chip integrated bulk wave resonator according to an embodiment of the present invention;

11 is a schematic diagram of a bulk wave resonator integrated with an inductor according to another embodiment of the present invention;

Fig. 12 is a schematic diagram of a bulk wave resonator integrated with a capacitor according to yet another embodiment of the present invention.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments of the present invention belong to the protection scope of the present invention.

According to an embodiment of the present invention, an on-chip integrated bulk wave resonator is provided.

A bulk wave resonator according to an embodiment of the present invention may include:

Bulk wave resonator;

At least one energy storage element, wherein the energy storage element may include capacitance and/or inductance or other energy storage elements for the bulk wave resonator, at least part of the at least one energy storage element is located in the projection area of the bulk wave resonator in the vertical direction Within the scope, preferably, at least part of at least one energy storage element is located in the cavity. By integrating the energy storage element into the bulk wave resonator, the integration space of the energy storage element and the bulk wave resonator can be effectively reduced, which is beneficial to further reducing the size of the bulk wave filter chip.

Wherein, the energy storage element includes an energy storage part and an electrode part. Moreover, the bulk wave resonator according to the embodiment of the present invention includes a cavity, and the energy storage part of at least one energy storage element is located in the cavity.

In addition, the bulk wave resonator according to the embodiment of the present invention further includes:

first electrode;

a second electrode positioned below the first electrode and electrically isolated from the first electrode;

The substrate is located below the second electrode, the cavity is formed by the concave surface of the substrate, and at least part of at least one energy storage element is located in the cavity.

According to an embodiment of the present invention, an on-chip integrated bulk wave resonator can be provided. As shown in Figures 3a-3c, they are respectively the top view of the bulk wave resonator according to the embodiment of the present invention, the top view of the structure in the cavity of the bulk wave resonator, and the cross-sectional view of the bulk wave resonator along the direction A-A in Figure 3a. In the embodiment shown in Figures 3a-3c, the cavity is located within the substrate. A bulk wave resonator according to an embodiment of the present invention includes a substrate 110, a cavity 120, a metal layer 130, a spiral region 131 of an inductor, a metal electrode 132 of an inductor, an insulating layer 140, a bottom electrode 150, a piezoelectric layer 160, and a top electrode 170 . Wherein, the inductor is the energy storage element mentioned in the text, and the metal layer 130 of the inductor plays the role of supporting the helical area 131 and electrically connecting, the helical area 131 is the energy storage part, and the metal electrode 132 is the electrode part.

As shown in Figure 3a, the cavity 120 is formed in the substrate 110, the bottom electrode 150 covers the cavity 120, the metal electrode 132 is used to connect the spiral region 131 of the inductor in the cavity 120, and the insulating layer 140 is located between the bottom electrode 150 and the metal of the inductor. Between the electrodes 132 , the piezoelectric layer 160 is located on the bottom electrode 150 and the top electrode 170 is located on the piezoelectric layer 160 .

As shown in FIG. 3 b , the helical region 131 of the inductor is suspended in the cavity 120 , and the metal layer 130 is located under the helical region 131 of the inductor, and is used to lead out electrical connections from the center of the helical inductor while supporting the helical inductor.

As shown in Figure 3c, the helical region 131 of the inductor is suspended in the cavity. The metal layer 130 is located under the spiral region 131 of the inductor, and is used to lead out the electrical connection from the center of the spiral inductor while supporting the spiral inductor to a certain extent. The insulating layer 140 is used to isolate the metal electrode 132 of the inductor from the bottom electrode 150 of the resonator.

According to yet another embodiment of the present invention, a bulk wave resonator may be provided, including:

electrode;

a substrate, located below the electrodes;

The energy storage portion of at least one energy storage element is located above the electrodes.

Wherein, in the embodiments described herein, the bottom of at least one energy storage element may be at least partially filled with insulating material (which may serve as a structural support) or there may be a gap.

In addition, in the embodiments described herein, gaps and/or insulating materials may exist between the conductive part of the bulk wave resonator and at least one energy storage element, so that the energy storage element and the conductive part of the bulk wave resonator Galvanic isolation.

According to an embodiment of the present invention, a method for manufacturing a bulk wave resonator integrated on a chip is provided.

A manufacturing method according to an embodiment of the invention includes:

Provide bulk wave resonators;

At least part of at least one energy storage element is disposed within the projection area of the bulk wave resonator in the vertical direction, wherein the energy storage element includes an energy storage part and an electrode part, and optionally, the energy storage element includes a capacitor and/or an inductor .

Preferably, a cavity is formed in the bulk wave resonator, and the energy storage part of at least one energy storage element is arranged in the cavity;

A piezoelectric structure is formed above the cavity, and the piezoelectric structure includes an upper electrode, a piezoelectric layer and a lower electrode.

In addition, when providing the bulk wave resonator, the manufacturing method according to the embodiment of the present invention further includes:

provide the basis;

disposing the energy storage portion of at least one energy storage element above the substrate;

forming a membrane layer over the at least one energy storage element;

A piezoelectric structure is formed above the membrane layer, and the piezoelectric structure includes an upper electrode, a piezoelectric layer and a lower electrode.

In the above embodiments, the energy storage portion of at least one energy storage element is disposed between the substrate and the electrode. In addition, the energy storage element may also be formed on the top electrode. That is, the inductor or capacitor can also be arranged above the bulk wave resonator, which can also achieve the effect of reducing the chip area.

According to an embodiment of the present invention, the processing flowcharts shown in Figs. 4a-4j provide a method for manufacturing an on-chip bulk wave resonator. In this embodiment, a cavity is formed in a substrate.

As shown in FIG. 4a, a concave cavity structure is formed on the silicon substrate 110 by dry etching, and then a metal layer is deposited on the silicon substrate by methods such as sputtering or physical vapor deposition, in order to form a The metal electrodes drawn out of the cavity require the metal to have good coverage on the side walls of the cavity. Next, the metal electrode 130 under the inductor is formed by patterning the metal layer by photolithography.

As shown in FIG. 4 b , a sacrificial layer material 180 is covered on the silicon substrate 110 and the metal electrode 130 by chemical vapor deposition or other methods, and a through hole a for connecting the inductor center to the metal electrode 130 is etched.

As shown in FIG. 4c, metal materials for forming inductance are deposited, and patterned to form the planar spiral inductance 131 in the bulk wave resonator shown in FIG. Good metal coverage of the side walls is required.

As shown in FIG. 4 d , the sacrificial layer material 180 is deposited by chemical vapor deposition or other methods, so that the sacrificial layer material 180 covers the cavity and the area outside the cavity and reaches a certain thickness.

As shown in FIG. 4e, the sacrificial layer is polished by chemical mechanical grinding, and the substrate 110 outside the cavity is exposed, and a flat and smooth surface is formed.

As shown in FIG. 4f , a metal layer is deposited and the metal electrodes are patterned so that the metal electrodes are respectively connected to the two electrical terminals of the inductor in the cavity to form a metal external electrode 132 for connecting the inductor.

As shown in FIG. 4g, an insulating layer 140 is deposited, and chemical mechanical polishing is performed again to form a flat and smooth surface, wherein the insulating layer completely covers the metal external electrodes.

As shown in FIG. 4h , metal materials are deposited on the insulating layer and patterned properly to form the bottom electrode 150 of the piezoelectric bulk wave resonator.

As shown in Figure 4i, a piezoelectric thin film (with good crystal orientation) is deposited to form a piezoelectric layer 160, and then metal is deposited on the piezoelectric thin film and properly patterned to form the top electrode 170 of the resonator.

As shown in FIG. 4j, the piezoelectric layer and the insulating layer are selectively etched to expose the metal electrodes to provide convenient and free electrical connections. Then, the sacrificial layer is removed by using a solution with high etching selectivity to the sacrificial layer, so that a cavity is formed at the bottom of the bottom electrode, and the spiral region of the inductor is suspended in the air, which is not shown in FIG. 4j for simplicity. A channel through which a sacrificial layer removal solution is introduced into the cavity.

In addition, the lower part of the energy storage element may be at least partially filled with an insulating material (which may serve as a structural support) or form a gap.

As shown in FIG. 5, according to another embodiment of the present invention, in the case that the Q value of the inductance is not high, the sacrificial layer material deposited in FIG. 4b is replaced with a dielectric material 190 with a smaller electrical loss angle. , so that the inductor is no longer suspended in the air, so that the inductor can have better mechanical stability.

In the technical solution of the present invention, the planar shape of the spiral inductor may not be limited to a square, but may also be various shapes such as a circle and an octagon. In addition, as shown in FIG. 6 a , which is a top view of the cavity structure of a bulk wave resonator integrated with a serpentine inductor structure, the inductor may be in a serpentine shape. Since the electrical ends of the serpentine inductor are at both ends of the inductance line, there is no need to lead out the electrical connection from the middle like the spiral inductor. Therefore, from the cross-sectional view of the bulk wave resonator shown in Figure 6b, it can be seen that in the manufacturing process, The energy storage element can be formed by patterning the inductive metal layer only once, which simplifies the process flow.

According to yet another embodiment of the present invention, as shown in FIG. 7 , a capacitor can be integrated at the bottom of the cavity using a process similar to that shown in FIGS. 4 a - 4 j . The bulk wave resonator shown in Fig. 7 is similar to that shown in Fig. 3c, except that the energy storage element in the bulk wave resonator shown in Fig. 7 is a capacitor. By controlling the area of the metal electrodes 231 and 232 and depositing the dielectric 220 with an appropriate thickness and dielectric constant, a capacitance of a certain size can be formed between the electrodes 231 and 232 .

As shown in Figure 8a, it is a top view of an on-chip integrated bulk wave resonator according to yet another embodiment of the present invention, which is similar to the resonator shown in Figure 3c, except that the wave resonator in Figure 8a omits the wave resonator in Figure 3c The insulating layer 140 makes the bottom electrode 340 bypass the inductor electrode 332 by reasonably patterning the shape of the bottom electrode 340 of the resonator. Figure 8b is a cross-sectional view taken along the A-A direction shown in Figure 8a, it can be seen that there is a gap 380 between the bottom electrode 340 of the resonator and the inductance electrode 332, so that the solution for removing the sacrificial layer can enter the cavity through the gap 380, simplifying The production process.

According to yet another embodiment of the present invention, a bulk wave resonator may be provided, including:

electrode;

The base is located under the electrodes, and the energy storage part of at least one energy storage element is located between the base and the electrodes. In this embodiment, there is no cavity in the substrate, but a cavity for accommodating the energy storage element is formed above the substrate.

As shown in FIG. 9 , it is a cross-sectional view of a bulk wave resonator with a cavity above a substrate according to an embodiment of the present invention. The bulk wave resonator includes a substrate 410, an inductor metal electrode 420, a metal inductor 421, the other end metal electrode 422 of the metal inductor, a cavity 430, an insulating layer 440, a bottom electrode 450 of the piezoelectric resonator, a piezoelectric layer 460 and a top electrode 470 . Wherein, the inductor metal electrode 420 is used to draw an electrical connection from the center of the inductor, and the metal inductor 421 is suspended in the cavity 430 .

As shown in Fig. 10a to Fig. 10e, the manufacturing process of the resonator shown in Fig. 8a is simply shown.

As shown in Figure 10a, a substrate 410 is provided, a metal electrode 420 is deposited and patterned on the substrate 410, and then a sacrificial layer 480 is deposited and patterned, so that a part of the metal electrode is exposed so as to be connected to the center of the patterned metal spiral inductance .

As shown in FIG. 10 b , the metal spiral inductor 421 is patterned first, and the center of the spiral inductor is connected to the metal electrode 420 , and then a sacrificial layer 480 is deposited to cover the surface.

As shown in FIG. 10c, the surface of the sacrificial layer is planarized by chemical mechanical polishing, and then raised steps of the sacrificial layer are formed by etching.

As shown in Figure 1Od, a membrane layer 440 is deposited as a support layer, and then the bottom electrode 450 of the resonator is deposited and patterned on the membrane layer 440.

As shown in Figure 10e, the piezoelectric layer is deposited, the top electrode 470 is deposited and patterned, and finally the piezoelectric layer 460 and the diaphragm layer are etched to expose the connecting electrodes 420 and 421 of the metal inductor, and finally the sacrificial layer is etched using a higher selectivity The solution removes the sacrificial layer, so that a cavity is formed under the bottom electrode, and the helical region of the inductor is suspended in the air. For the sake of simplicity, the channel for introducing the sacrificial layer removal solution into the cavity is not drawn in the figure.

As shown in FIG. 11 , it is a cross-sectional view of a bulk wave resonator according to another embodiment of the present invention. In the case that the Q value of the inductance is not high, changing the material of the sacrificial layer deposited in FIG. mechanical stability.

The planar shape of the spiral inductor in the bulk wave resonator according to the embodiments of the present invention is not limited to a square, and may also be circular, octagonal and other shapes. In addition, the inductance in the embodiment can also be serpentine. Since the electrical ends of the serpentine inductance are respectively at the two ends of the inductance line, there is no need to draw an electrical connection from the middle like a spiral inductance, and the inductance metal layer can only be connected once. Composition can simplify the process flow.

As shown in FIG. 12 , a bulk wave resonator according to another embodiment of the present invention can be formed with reference to the process flow shown in FIG. 10 a - FIG. 10 j , that is, a similar processing method can be used to integrate capacitors in the cavity.

In addition, the technical solution of the present invention is not limited to the case where there is only one capacitor or inductor in the cavity at the bottom of the resonator or other positions, and may also be multiple capacitors, multiple inductors or a combination thereof.

The substrate described herein can be made of silicon, germanium, gallium arsenide, gallium nitride, sapphire, etc. or their combination, but is not limited to the above materials. The top and bottom electrodes can be made of gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al), titanium ( Ti) and similar metal formation. The piezoelectric layer can be aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO ₃ ), quartz (quartz), potassium niobate (KNbO ₃ ) or lithium tantalate (LiTaO ₃ ) and other materials, but not limited to the above materials.

The metal inductors described herein may be made of copper (Cu), aluminum (Al), gold (Au), tungsten (W), molybdenum (Mo) and other materials, but are not limited to the above materials.

The insulating layer described herein may be made of silicon dioxide (SiO ₂ ), polymer (Polymer), silicon nitride (SiN) and other materials, but is not limited to the above materials.

The dielectric layer described herein may be silicon dioxide (SiO ₂ ), silicon nitride (SiN) and other materials, but not limited to the above materials.

The diaphragm layer material described herein may be composed of silicon dioxide (SiO ₂ ), polymer (Polymer), silicon nitride (SiN) and other materials, but is not limited to the above materials.

In summary, with the help of the above technical solution of the present invention, the present invention integrates energy storage elements such as inductors and capacitors in the bottom cavity of the thin film bulk wave resonator or other structures during the chip wafer manufacturing process, thereby converting The energy storage elements such as inductors or capacitors and the thin film bulk wave resonator are vertically arranged in the thickness direction of the substrate, thereby reducing the chip area and finally reducing the size of the chip.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the scope of the present invention. within the scope of protection.

Claims (14)

1. an integrated-type body wave resonator on sheet, is characterized in that, comprising:

Described body wave resonator;

At least one energy-storage travelling wave tube, wherein, the described body wave resonator view field's scope in the vertical direction that is positioned at least partly of described at least one energy-storage travelling wave tube.

2. body wave resonator according to claim 1, is characterized in that, energy-storage travelling wave tube comprises energy storage part and electrode part.

3. body wave resonator according to claim 2, is characterized in that, described body wave resonator comprises cavity, and the energy reserve of described at least one energy-storage travelling wave tube is in described cavity.

4. body wave resonator according to claim 3, is characterized in that, described body wave resonator further comprises:

The first electrode;

The second electrode, is positioned at described the first electrode below, and isolates with described the first electrode electricity;

Substrate, is positioned at described the second electrode below, and described cavity is formed by the concave surface of described substrate.

5. body wave resonator according to claim 2, is characterized in that, described body wave resonator further comprises:

Electrode;

Substrate, is positioned at described electrode below, and the energy reserve of described at least one energy-storage travelling wave tube is between described substrate and described electrode.

6. body wave resonator according to claim 2, is characterized in that, described body wave resonator further comprises:

Electrode;

Substrate, is positioned at described electrode below;

The energy reserve of described at least one energy-storage travelling wave tube is in the top of described electrode.

7. according to arbitrary described body wave resonator in claim 1-6, it is characterized in that, below described at least one energy-storage travelling wave tube, be filled with at least partly insulating material or have gap.

8. according to arbitrary described body wave resonator in claim 2-6, it is characterized in that, between the conductive part of described body wave resonator and described at least one energy-storage travelling wave tube, have gap and/or insulating material.

9. according to arbitrary described body wave resonator in claim 1-6, it is characterized in that, energy-storage travelling wave tube comprises electric capacity and/or inductance.

10. a manufacture method for integrated-type body wave resonator on sheet, is characterized in that, comprising:

Described body wave resonator is provided;

By being arranged at least partly within the scope of described body wave resonator view field in the vertical direction of at least one energy-storage travelling wave tube.

11. manufacture methods according to claim 10, is characterized in that, energy-storage travelling wave tube comprises energy storage part and electrode part.

12. manufacture methods according to claim 10, is characterized in that, in described body wave resonator, form cavity, and the energy storage part of described at least one energy-storage travelling wave tube is arranged in described cavity;

Above described cavity, form piezoelectric structure, described piezoelectric structure comprises top electrode, piezoelectric layer and bottom electrode.

13. manufacture methods according to claim 10, is characterized in that, when described body wave resonator is provided, described manufacture method further comprises:

Substrate is provided;

The energy storage part of described at least one energy-storage travelling wave tube is arranged to described substrate top;

Above described at least one energy-storage travelling wave tube, form membrane layer;

Above described membrane layer, form piezoelectric structure, described piezoelectric structure comprises top electrode, piezoelectric layer and bottom electrode.

14. according to arbitrary described body wave resonator in claim 10-13, it is characterized in that, energy-storage travelling wave tube comprises electric capacity and/or inductance.

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