CN103539445A - Low-temperature sinterable microwave dielectric ceramic Zn2V3Bi3O14 and its preparation method - Google Patents

Abstract

The invention discloses a low-temperature sinterable microwave dielectric ceramic Zn ₂ V ₃ Bi ₃ O ₁₄ and a preparation method thereof. The chemical composition of low-temperature sinterable microwave dielectric ceramics is Zn ₂ V ₃ Bi ₃ O ₁₄ . (1) Weigh the raw powders of analytically pure ZnO, V ₂ O ₅ and Bi ₂ O ₃ according to the chemical formula of Zn ₂ V ₃ Bi ₃ O ₁₄ . (2) Mix the raw materials in step (1) with distilled water and wet ball mill for 12 hours, dry them and pre-fire them in an atmosphere at 800°C for 6 hours. (3) Add a binder to the powder prepared in step (2) and granulate it, then press it into shape, and finally sinter it in the air atmosphere at 870-900°C for 4 hours; the binder is used at a mass concentration of 5 % polyvinyl alcohol solution, the dosage accounts for 3% of the total mass of the powder. The ceramic prepared by the invention is well sintered at 870-900°C, its dielectric constant reaches 15-16, its quality factor Qf value is as high as 78000-86000 GHz, and the temperature coefficient of resonance frequency is small, so it has great application value in industry.

Description

Low temperature sinterable microwave dielectric ceramics Zn2V3Bi3O14 and its preparation method

technical field

The present invention relates to dielectric ceramics, in particular to microwave dielectric ceramics for microwave components used at microwave frequencies, such as dielectric substrates, resonators and filters, and a preparation method thereof.

Background technique

Microwave dielectric ceramics refer to ceramics that are used as dielectric materials in circuits in the microwave frequency band (mainly UHF and SHF bands) and perform one or more functions. They are widely used as resonators, filters, and dielectric substrates in modern communications. Components such as chips and dielectric waveguide circuits are the key basic materials of modern communication technology. They have been used in portable mobile phones, car phones, cordless phones, TV satellite receivers and military radars. They are used in modern communication tools. It is playing an increasingly important role in the process of miniaturization and integration.

Dielectric ceramics used in the microwave frequency band should meet the following requirements for dielectric properties: (1) Serialized dielectric constant ε _r to meet the requirements of different frequencies and different applications; (2) High quality factor Q value or dielectric Loss tanδ to reduce noise, generally requires Qf≥3000 GHz; (3) The temperature coefficient τ _ƒ of the resonant frequency should be as small as possible to ensure good thermal stability of the device, generally requires -10/℃≤τ _ƒ ≤+10 ppm/ ℃. Internationally, since the late 1930s, there have been attempts to apply dielectric materials to microwave technology.

According to the relative permittivity ε _r and the frequency band used, the microwave dielectric ceramics that have been developed and are being developed can usually be divided into 4 categories.

(1) Ultra-low dielectric constant microwave dielectric ceramics, mainly represented by Al ₂ O ₃ -TiO ₂ , Y ₂ BaCuO ₅ , MgAl ₂ O ₄ and Mg ₂ SiO ₄ , etc., whose ε _r ≤ 20, quality factor Q× f≥50000GHz, τ _ƒ ≤10 ppm/°C. Mainly used for microwave substrates and high-end microwave components.

(2) Microwave dielectric ceramics with low ε _r and high Q value, mainly BaO-MgO-Ta ₂ O ₅ , BaO-ZnO-Ta ₂ O ₅ or BaO-MgO-Nb ₂ O ₅ , BaO-ZnO-Nb ₂ O ₅ system or composite system MWDC materials between them. Its ε _r =25～30, Q=(1～2)×10 ⁴ (at f≥10 GHz), τ _ƒ ≈0. It is mainly used as a dielectric resonator device in microwave communication devices such as satellite broadcasting with f≥8 GHz.

(3) Microwave dielectric ceramics with medium ε _r and Q value, mainly MWDC materials based on BaTi ₄ O ₉ , Ba ₂ Ti ₉ O ₂₀ and (Zr, Sn) TiO ₄ , whose ε _r = 35~ 40, Q=(6~9)×10 ³ (at f=3~-4GHz), τ _ƒ ≤5 ppm/°C. It is mainly used as a dielectric resonant device in microwave military radar and communication systems in the frequency range of 4-8 GHz.

(4) Microwave dielectric ceramics with high ε _r and low Q value are mainly used in civil mobile communication systems in the frequency range of 0.8-4GHz, which is also the focus of research on microwave dielectric ceramics. Since the 1980s, Kolar, Kato and others have successively discovered and studied perovskite-like tungsten bronze BaO—Ln ₂ O ₃ —TiO ₂ series (Ln=La, Sm, Nd or Pr, etc., referred to as BLT series), composite calcium Titanite structure CaO—Li ₂ O—Ln ₂ O ₃ —TiO ₂ series, lead-based series materials, Ca _1-x Ln _2x/3 TiO ₃ series and other high ε _r microwave dielectric ceramics, among which BaO—Nd of BLT system The dielectric constant of ₂ O ₃ —TiO ₂ materials reaches 90, and the dielectric constant of lead-based series (Pb, Ca)ZrO ₃ reaches 105.

The sintering temperature of the above material systems is generally higher than 1300°C, and cannot be directly co-fired with low melting point metals such as Ag and Cu to form multilayer ceramic capacitors. In recent years, with the development of miniaturization and integration of devices, microwave dielectric ceramics need to be co-fired with Ag or Cu electrodes (melting points are 961°C and 1042°C, respectively) that are lower in cost than metals such as Au and Pd to obtain a chip multilayer structure. This requires that the material not only has good microwave dielectric properties, but also that its sintering temperature should be lower than the melting point of Cu and Ag. We have studied the sintering characteristics and microwave dielectric properties of ceramics composed of Zn ₂ V ₃ Bi ₃ O ₁₄ , and found that this type of ceramics has excellent comprehensive microwave dielectric properties and the sintering temperature is lower than 900 ° C. The low-temperature co-firing of Ag can be widely used in the manufacture of microwave devices such as various resonators and filters, and can meet the needs of low-temperature co-firing technology and microwave multilayer devices.

Contents of the invention

The object of the present invention is to provide a microwave dielectric ceramic with low loss, good thermal stability and low sintering temperature.

The chemical composition formula of the microwave dielectric ceramic of the present invention is: Zn ₂ V ₃ Bi ₃ O ₁₄ .

The specific steps of the preparation method of the microwave dielectric ceramic are:

(1) Weigh the raw powders of analytically pure ZnO, V ₂ O ₅ and Bi ₂ O ₃ according to the chemical formula of Zn ₂ V ₃ Bi ₃ O ₁₄ .

(2) Mix the raw materials in step (1) with distilled water and wet ball mill for 12 hours, dry them and pre-fire them in an atmosphere at 800°C for 6 hours.

(3) Add a binder to the powder prepared in step (2) and granulate it, then press it into shape, and finally sinter it in the air atmosphere at 870-900°C for 4 hours; the binder is used at a mass concentration of 5 % polyvinyl alcohol solution, the dosage accounts for 3% of the total mass of the powder.

The ceramic prepared by the invention is well sintered at 870-900°C, its dielectric constant reaches 15-16, its quality factor Qf value is as high as 78000-86000 GHz, and the temperature coefficient of resonance frequency is small, so it has great application value in industry.

Detailed ways

Example:

Table 1 shows four specific examples of different sintering temperatures constituting the present invention and their microwave dielectric properties. The preparation method is as above, and the dielectric properties of the microwave are evaluated by the cylindrical dielectric resonator method; Zn ₂ V ₃ Bi ₃ O ₁₄ powder is mixed with Ag powder accounting for 20% of the powder mass, and after compression molding, it is heated at 900 Sintering at ℃ for 4 hours; X-ray diffraction phase analysis and scanning electron microscope observation both show that Zn ₂ V ₃ Bi ₃ O ₁₄ has no chemical reaction with Ag, that is, Zn ₂ V ₃ Bi ₃ O ₁₄ can be co-fired with Ag electrode at low temperature.

The present invention is by no means limited to the above examples. The upper and lower limits and range values of the sintering temperature can all realize the present invention, and the examples are not listed one by one here.

The ceramics can be widely used in the manufacture of microwave devices such as various dielectric substrates, resonators and filters, and can meet the technical needs of mobile communication, satellite communication and other systems.

Table 1:

Claims (1)

1. A low-temperature sinterable microwave dielectric ceramic, characterized in that the chemical composition of the microwave dielectric ceramic is: Zn ₂ V ₃ Bi ₃ O ₁₄ ; The specific steps of the preparation method of the microwave dielectric ceramic are: (1) Weigh the original powder of analytically pure ZnO, V ₂ O ₅ and Bi ₂ O ₃ according to the chemical formula of Zn ₂ V ₃ Bi ₃ O ₁₄ ; (2) Mix the raw materials of step (1) with distilled water and wet ball mill for 12 hours, dry and pre-fire in the atmosphere at 800°C for 6 hours; (3) Add a binder to the powder prepared in step (2) and granulate it, then press it into shape, and finally sinter it in the air atmosphere at 870-900°C for 4 hours; the binder is used at a mass concentration of 5 % polyvinyl alcohol solution, the dosage accounts for 3% of the total mass of the powder.