CN103441670A - Charge pump circuit with controllable output voltage - Google Patents
Charge pump circuit with controllable output voltage Download PDFInfo
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- CN103441670A CN103441670A CN2013103817170A CN201310381717A CN103441670A CN 103441670 A CN103441670 A CN 103441670A CN 2013103817170 A CN2013103817170 A CN 2013103817170A CN 201310381717 A CN201310381717 A CN 201310381717A CN 103441670 A CN103441670 A CN 103441670A
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Abstract
The invention discloses a charge pump circuit with a controllable output voltage. The charge pump circuit with the controllable output voltage comprises a bias voltage module, a bias selection module, a PID control module, a voltage-controlled oscillator, a step-up circuit and a voltage division module. The bias voltage module generates a fixed bias voltage, the fixed bias voltage is processed through the bias selection module, and then a bias control voltage is output, wherein the bias control voltage and a voltage which is generated after a step-up circuit output voltage passes through the voltage division module are input into the PID control module at the same time; the voltage-controlled oscillator converts an output voltage of the PID control module into two clock signals, wherein the two clock signals are opposite in phase and are in direct proportion to the magnitude of the frequency of an input voltage; the step-up circuit of a charge pump is controlled by the two clock signals which are opposite in phase and output by the voltage-controlled oscillator. According to the charge pump circuit with the controllable output voltage, PID closed-loop control is applied to the charge pump circuit, the magnitude of the bias voltage of the circuit is controlled externally at the same time, and therefore the output voltage of the charge pump can be adjusted accurately; besides, the modules are combined with the voltage-controlled oscillator, so that the step-up linearity of the charge pump is improved.
Description
Technical field
The present invention relates to the controlled charge pump circuit of a kind of output voltage, belong to the circuit engineering field.
Background technology
In recent years, along with the fast development in MEMS field, acceierometer sensor, gyro sensor, temperature sensor, electromagnetic sensor etc. are widely applied in fields such as mobile phone, boats and ships, inertial navigations.If these transducers will work, the treatment circuit matched with it must be arranged.And these treatment circuits are more and more harsher to the supply voltage requirement of circuit for the consideration to each side such as low-power consumption, high s/n ratios.
In order to reach the purpose that reduces power consumption, need the supply voltage for the treatment of circuit more low better, as 3.3V, 1.8V, 1.2V, 1V etc., but the characteristics due to MEMS mechanical structure, usually require the partial circuit module, as the drive circuit module be connected with structure, it need provide the driving voltage of super power supply far away, in order to drive MEMS mechanical structure, now just need to provide booster circuit that a higher while of precision can conveniently regulate to solve the problem of high driving voltage at inside circuit.
Existing charge pump construction, as shown in Figure 1, be comprised of booster circuit, biasing circuit, division module, voltage comparator and oscillator.After oscillator powers on starting of oscillation, clock signal clk is in booster circuit, and charge pump starts to boost, and now division module will produce a voltage V0 proportional to output voltage, this voltage VO and bias voltage Vb compare, unlatching and the shutoff of its output voltage V c in order to control oscillator.When charge pump output voltage VOUT1 is low, V0<Vb, now the output voltage V c of comparator is high level " H ", oscillator remains on operating state, charge pump continues to boost, until V0 >=Vb, now, comparator output voltage V c becomes low level " L " by high level " H ", and oscillator quits work.Charge pump is due to the relation of extraneous load, and output voltage VO UT1 starts to descend gradually, and the voltage that division module is got also descends thereupon, until voltage V0 is less than bias voltage Vb again, charge pump restarts the work of boosting again, and so repeatedly, the output voltage VO UT1 that maintains charge pump is constant.
The advantage of this structure is that loop structure is simple, but, obtains the controlled voltage of high accuracy if want and will be difficult to realize in the course of the work in the dynamic change in " balanced-unbalanced-balance " more always due to this charge pump feedback system.And this Structure Comparison not only requires it to have the speed of response faster than the having relatively high expectations of device, its precision, bandwidth, open-loop gain, common-mode input range etc. are all had to higher requirement simultaneously.Nonetheless, such charge pump still is difficult to obtain the controlled output voltage of high accuracy.Wherein the analogous diagram of branch pressure voltage V0 and bias voltage Vb as shown in Figure 2.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of novel charge pump feedback system, makes the system can be more stable, and the high and voltage of output voltage precision is can size controlled.
For solving the problems of the technologies described above, the invention provides the controlled charge pump circuit of a kind of output voltage, it is characterized in that, comprise bias voltage module, biasing selection module, pid control module, voltage controlled oscillator, booster circuit, division module,
Bias voltage module produces a fixing bias voltage, this voltage is after resume module is selected in biasing, voltage V1 is controlled in output one biasing, and the branch pressure voltage V2 that biasing control voltage V1 and booster circuit output voltage produce after division module is input in pid control module simultaneously;
Regulating control through described pid control module by PID makes the output voltage V 3 of pid control module equal biasing control voltage V1;
The clock signal that voltage controlled oscillator converts the output voltage V of pid control module 3 two single spin-echos to and is directly proportional to the frequency size of input voltage;
The clock signal of two single spin-echos of voltage controlled oscillator output is controlled the booster circuit of charge pump.
Described pid control module detects biasing and controls the error between voltage V1 and branch pressure voltage V2, and regulates and control the output voltage V 3 that the makes pid control module control voltage V1 that equals to setover by PID.
Described pid control module comprises proportional amplifier, integrator, differentiator and adder, and wherein, integrator is for eliminating steady-state error; The instant proportional reflection deviation signal of proportional amplifier; Differentiator is for reflecting the rate of change of deviation signal.
Also comprise a Logic control module of selecting module, pid control module to be connected with biasing respectively, by described Logic control module, select biasing to select the biasing of module output to control the size of voltage V1 and unlatching or the shutoff of Control PID control module.
Also comprise a Logic control module of selecting module, pid control module to be connected with biasing respectively, the implementation of serial or parallel connection between integrator, proportional amplifier in described Logic control module Control PID control module.
The beneficial effect that the present invention reaches:
The present invention is incorporated into the PID Closed loop Control in charge pump circuit, improve system accuracy, simultaneously by the size of external control circuit bias voltage, the output voltage of energy fine adjustment charge pump, and the combination of this module and voltage controlled oscillator, improved the linearity that charge pump boosts.
The accompanying drawing explanation
The charge pump booster circuit schematic diagram that Fig. 1 is prior art;
The simulation waveform figure of branch pressure voltage V0 and bias voltage Vb in the charge pump booster circuit that Fig. 2 is prior art;
Fig. 3 is the related a kind of circuit structure diagram of exporting controlled charge pump circuit of the present invention;
Fig. 4 is the related a kind of analogous diagram of exporting controlled charge pump circuit of the present invention.This figure has reflected the relation of bias voltage V1 and charge pump output voltage;
Fig. 5 is the related a kind of input offset voltage of controlled charge pump circuit and the graph of a relation of the final output voltage of charge pump exported of the present invention;
Fig. 6 a is the implementation that the related a kind of pid control module of exporting controlled charge pump circuit of the present invention adopts P, I parallel connection;
Fig. 6-b is the implementation that the related a kind of pid control module of exporting controlled charge pump circuit of the present invention adopts P, I series connection.
Fig. 7 is a kind of implementation that module is selected in the related a kind of biasing of exporting controlled charge pump circuit of the present invention.
Fig. 8 is the related a kind of a kind of implementation of exporting the Logic control module of controlled charge pump circuit of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.Following examples are only for technical scheme of the present invention more clearly is described, and can not limit the scope of the invention with this.
As shown in Figure 3, this main circuit will comprise bias voltage module, biasing selection module, pid control module, voltage controlled oscillator, booster circuit, division module and Logic control module to circuit structure block diagram of the present invention.The present invention adopts brand-new closed-loop control loop structure, utilizes the PID(proportional-integral-differential) control principle, realize the adjusting to the voltage controlled oscillator output frequency, thereby control the output voltage of charge pump circuit.
The course of work of this circuit is such, the clock signal clk1 that voltage controlled oscillator output two phase place is contrary, the booster circuit that clk2 controls charge pump, thereby make a higher voltage VOUT of booster circuit output, voltage VOUT produces voltage V2 and is input in pid control module after the division module dividing potential drop.Bias voltage module produces a fixing bias voltage simultaneously, and this voltage is after biasing selects module to be processed, and output offset is controlled voltage V1.Voltage V1 is controlled in biasing and charge pump is input in pid control module through the voltage V2 of division module generation simultaneously.
Biasing selects the effect of module to be, by the selection function of this module, can control very easily the size of bias voltage module output voltage, improves the flexibility of using.Fig. 7 is a kind of implementation that module is selected in biasing of the present invention.Its operation principle is such, when amplifier is started working, because amplifier is clamped, makes bias voltage V0 equal reference voltage V ref, i.e. V0=Vref.When Logic control module input control signal logic2 makes switch S 3 conducting, short according to amplifier void, empty disconnected theoretical, V1=V0=1.1Vref, when switch S 3 disconnects, during switch S 2 conducting, V1=1.2Vref, when switch S 3, S2 disconnect, during switch S 1 conducting, V1=1.3Vref, the like.
The selection of biasing is various, and the present invention only provides a kind of biasing to select module as a reference.
The effect of Logic control module is to biasing, to select module, pid control module to be controlled by logic coding, and it can adopt digital circuit or EEPROM to realize.
Fig. 8 is a kind of simple logic control module circuit that the present invention proposes, this circuit is to adopt four groups of d type flip flops to realize, external control signal is from pin DA<0 >, DA<1 >, DA<2 >, DA<3 > input, when level clk becomes 1 by 0, pin Q<0 >, Q<1 >, Q<2 >, Q<3 > output control signal logic2, logic1 is in biasing selected module and pid control module, in order to integrator in the on/off of the size of selecting bias voltage and Control PID control module or Control PID control module, the series connection of proportional amplifier/implementation in parallel.
Pid control module, it mainly is comprised of proportional amplifier, integrator, differentiator and adder etc., and the Main Function of this module is to detect the error size that voltage V1 and voltage V2 are controlled in biasing.Wherein, integrator is mainly the steady-state error of eliminating this control system, improve system without margin.Its Main Function of proportional amplifier is the deviation signal of instant proportional reflection control system, once deviation produces, controller generation effect immediately, to reduce deviation.Differentiator can reflect the variation tendency (rate of change) of deviation signal, and can before the deviation signal value becomes too greatly, introduce an effectively early stage corrected signal in system, thereby accelerates the responsiveness of system, minimizing adjusting time.
In the present invention, when charge pump circuit reaches while stablizing, the output voltage V 3 of pid control module will equal biasing and control voltage V1.Due to pid control module, under the effect of close loop negative feedback, it has the extraordinary linearity and errorless margin, therefore can effectively control the stability of output voltage V 3.Voltage controlled oscillator converts output voltage V 3 to the clock signal of single spin-echo, and simultaneously, the frequency of this clock signal size is directly proportional to the size of the output voltage V 3 of input.
Table 1
Fig. 4 is the related a kind of analogous diagram of exporting controlled charge pump circuit of the present invention.This figure has reflected the relation of biasing control voltage V1 and charge pump output voltage VOUT.Control as we can see from the figure the rising of voltage V1 along with biasing, charge pump output voltage VOUT also increases.
In Fig. 4 a, abscissa is simulation time, the size that ordinate is charge pump output voltage VOUT, the analogous diagram topmost portion, when/bias=0.18V represents bias voltage V1=0.18V, the curve chart of charge pump output voltage VOUT, under this bias voltage, its output characteristic curve is the curve in below shown in Fig. 4 a, when this curve is stablized, and charge pump output voltage VOUT=21.33V in corresponding table 1.
Fig. 4 b is that Fig. 4 a is in 1.5ms～4ms interval in the circuit simulation time, the partial enlarged drawing of charge pump output voltage VOUT.
Fig. 5 is the graph of a relation that voltage V1 and the final output voltage of charge pump are controlled in the related a kind of input biasing of exporting controlled charge pump circuit of the present invention.From this figure, can see, the output voltage of charge pump and bias voltage are approximated to linear relationship within the specific limits.By controlling the size of bias voltage, can reach easily the purpose of accurate control charge pump output voltage.
Fig. 6 is the related a kind of two kinds of implementations exporting the pid control module of controlled charge pump circuit of the present invention.Wherein Fig. 6-a is pid control module adoption rate amplifier P, integrator I parallel way, and Fig. 6-b is that pid control module adoption rate amplifier P, integrator I adopt series system, and these two kinds of connected modes all can well play the purpose that loop is controlled.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the technology of the present invention principle; can also make some improvement and distortion, these improvement and distortion also should be considered as protection scope of the present invention.
Claims (5)
1. the charge pump circuit that output voltage is controlled, is characterized in that, comprises bias voltage module, biasing selection module, pid control module, voltage controlled oscillator, booster circuit, division module,
Bias voltage module produces a fixing bias voltage, this voltage is after resume module is selected in biasing, voltage V1 is controlled in output one biasing, and the branch pressure voltage V2 that biasing control voltage V1 and booster circuit output voltage produce after division module is input in pid control module simultaneously;
Regulating control through described pid control module by PID makes the output voltage V 3 of pid control module equal biasing control voltage V1;
The clock signal that voltage controlled oscillator converts the output voltage V of pid control module 3 two single spin-echos to and is directly proportional to the frequency size of input voltage;
The clock signal of two single spin-echos of voltage controlled oscillator output is controlled the booster circuit of charge pump.
2. the controlled charge pump circuit of output voltage according to claim 1, it is characterized in that, described pid control module detects biasing and controls the error between voltage V1 and branch pressure voltage V2, and regulates and control the output voltage V 3 that the makes pid control module control voltage V1 that equals to setover by PID.
3. the controlled charge pump circuit of output voltage according to claim 1 and 2, is characterized in that, described pid control module comprises proportional amplifier, integrator, differentiator and adder, and wherein, integrator is for eliminating steady-state error; The instant proportional reflection deviation signal of proportional amplifier; Differentiator is for reflecting the rate of change of deviation signal.
4. the controlled charge pump circuit of output voltage according to claim 1, it is characterized in that, also comprise a Logic control module of selecting module, pid control module to be connected with biasing respectively, by described Logic control module, select biasing to select the biasing of module output to control the size of voltage V1 and unlatching or the shutoff of Control PID control module.
5. the controlled charge pump circuit of output voltage according to claim 3, it is characterized in that, also comprise a Logic control module of selecting module, pid control module to be connected with biasing respectively, the implementation of serial or parallel connection between integrator, proportional amplifier in described Logic control module Control PID control module.
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| CN201310381717.0A CN103441670B (en) | 2013-08-28 | 2013-08-28 | The charge pump circuit that a kind of output voltage is controlled |
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| CN201310381717.0A CN103441670B (en) | 2013-08-28 | 2013-08-28 | The charge pump circuit that a kind of output voltage is controlled |
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Cited By (7)
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| CN104038249A (en) * | 2014-05-12 | 2014-09-10 | 杭州电子科技大学 | Method of estimating pseudorandom code of cycle long code direct sequence spread spectrum signals |
| CN105094193A (en) * | 2014-05-04 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Low differential pressure voltage stabilizer |
| CN105932873A (en) * | 2016-06-17 | 2016-09-07 | 苏州昆泰芯微电子科技有限公司 | Low-power and high-output voltage charge pump |
| CN106559041A (en) * | 2016-10-27 | 2017-04-05 | 锐迪科微电子（上海）有限公司 | A kind of bias control circuit and control method of radio-frequency power amplifier |
| CN111130341A (en) * | 2020-01-15 | 2020-05-08 | 清华大学 | Digital closed-loop control charge pump based on MEMS (micro-electromechanical system) capacitor |
| CN113992001A (en) * | 2021-12-28 | 2022-01-28 | 广东曜芯科技有限公司 | Configurable charge pump |
| CN114400889A (en) * | 2022-01-25 | 2022-04-26 | 上海感与执技术有限公司 | Output voltage control circuit and method for charge pump |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105094193B (en) * | 2014-05-04 | 2017-06-30 | 中芯国际集成电路制造(上海)有限公司 | Low-dropout regulator |
| CN105094193A (en) * | 2014-05-04 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Low differential pressure voltage stabilizer |
| CN104038249B (en) * | 2014-05-12 | 2016-08-24 | 杭州电子科技大学 | Cycle long code direct sequence signal pseudo-random code estimation method |
| CN104038249A (en) * | 2014-05-12 | 2014-09-10 | 杭州电子科技大学 | Method of estimating pseudorandom code of cycle long code direct sequence spread spectrum signals |
| CN105932873B (en) * | 2016-06-17 | 2018-05-25 | 苏州昆泰芯微电子科技有限公司 | A kind of charge pump of low-power consumption high output voltage |
| CN105932873A (en) * | 2016-06-17 | 2016-09-07 | 苏州昆泰芯微电子科技有限公司 | Low-power and high-output voltage charge pump |
| CN106559041A (en) * | 2016-10-27 | 2017-04-05 | 锐迪科微电子（上海）有限公司 | A kind of bias control circuit and control method of radio-frequency power amplifier |
| CN106559041B (en) * | 2016-10-27 | 2019-11-15 | 锐迪科微电子（上海）有限公司 | A kind of bias control circuit and control method of radio-frequency power amplifier |
| CN111130341A (en) * | 2020-01-15 | 2020-05-08 | 清华大学 | Digital closed-loop control charge pump based on MEMS (micro-electromechanical system) capacitor |
| CN111130341B (en) * | 2020-01-15 | 2020-12-01 | 清华大学 | A Digital Closed-loop Controlled Charge Pump Based on MEMS Capacitor |
| CN113992001A (en) * | 2021-12-28 | 2022-01-28 | 广东曜芯科技有限公司 | Configurable charge pump |
| CN113992001B (en) * | 2021-12-28 | 2022-03-29 | 广东曜芯科技有限公司 | Configurable charge pump |
| CN114400889A (en) * | 2022-01-25 | 2022-04-26 | 上海感与执技术有限公司 | Output voltage control circuit and method for charge pump |
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Effective date of registration: 20180815 Address after: 233030 2016 Tang He road, Bengbu, Anhui Patentee after: Huadong Photoelectric Integrated Device Research Institute Address before: 215163 No. 89 Longshan Road, Suzhou high tech Zone, Suzhou, Jiangsu Patentee before: China North Industries Group Corporation No.214 Research Institute Suzhou R&D Center |
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