CN103422065B - magnetron sputtering apparatus and magnetron control method - Google Patents
magnetron sputtering apparatus and magnetron control method Download PDFInfo
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- CN103422065B CN103422065B CN201210152625.0A CN201210152625A CN103422065B CN 103422065 B CN103422065 B CN 103422065B CN 201210152625 A CN201210152625 A CN 201210152625A CN 103422065 B CN103422065 B CN 103422065B
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 26
- 230000007246 mechanism Effects 0.000 claims abstract description 46
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 8
- 230000033001 locomotion Effects 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 6
- 238000009432 framing Methods 0.000 claims description 6
- 238000007514 turning Methods 0.000 claims description 4
- 230000008450 motivation Effects 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 12
- 238000005260 corrosion Methods 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 10
- 230000003628 erosive effect Effects 0.000 description 7
- 239000013077 target material Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
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Abstract
The present invention provides a kind of magnetron sputtering apparatus and magnetron control method, magnetron sputtering apparatus includes reaction chamber, target, magnetron, drive mechanism, magnetron positioning unit and control device, drive mechanism is connected with controlling device, and rotational velocity and the revolution speed of magnetron is controlled according to the control signal controlling device, magnetron positioning unit is for determining the initial position of magnetron, control device for determining the service cycle of magnetron according to initial position, and according to controlling rotational velocity and the revolution speed of drive mechanism service cycle, thus on the premise of magnetron is constant by each position number of times of target, control magnetron residence time in target unit are, to improve the etching homogeneity of target.This magnetron sputtering apparatus can improve the utilization rate of target, thus reduces the operating cost of magnetron sputtering apparatus；And the time changing target can be reduced, thus improve the utilization rate of magnetron sputtering apparatus.
Description
Technical field
The invention belongs to plasma processing techniques field, relate to a kind of magnetron sputtering apparatus and
Magnetron control method.
Background technology
Magnetron sputtering technique is to introduce magnetic field at target material surface, utilizes magnetic field to carry out restraining belt electrochondria
Son, increases the collision probability of electronics and process gas, such that it is able to improve the density of plasma,
And then working (machining) efficiency can be improved.Therefore magnetron sputtering process equipment is widely used in integrated
Circuit and the production of thin film solar.
Fig. 1 is the structure diagram of typical magnetron sputtering process equipment.As it is shown in figure 1, magnetic
Control sputtering process equipment includes reaction chamber 1, is provided with for carrying in the bottom of reaction chamber 1
The electrostatic chuck 2 of workpiece to be machined.It is provided with target 3, at target at the top of reaction chamber 1
The magnetron 6 being arranged over for improving sputter rate of 3, magnetron 6 is in drive mechanism 7
Driving under target 3 upper surface rotate.
Fig. 2 is the structure diagram of the drive mechanism for driving magnetron.As in figure 2 it is shown,
Drive mechanism include rotating shaft the 20, first gear (not shown), the second gear 22,
Three gear the 23, the 4th gear 24 and the first connecting plate 28, one end of rotating shaft 20 and motors
(not shown) connects, and the other end and the first connecting plate 28 and the first gear connect.
First gear, the second gear the 22, the 3rd gear the 23, the 4th gear 24 are fixed on the first connection
On plate 28.Second gear 22 engages with the first gear, the 3rd gear 23 and the second gear 22
Engagement, the 4th gear 24 engages with the 3rd gear 23.Magnetron 6 is by the second connecting plate
25 are connected with the rotating shaft of the 4th gear 24.When motor-driven rotatable shaft 20 rotates, the first tooth
Wheel, the second gear the 22, the 3rd gear 23 and the 4th gear 24 rotate centered by rotating shaft 20,
Meanwhile, the first gear, the second gear the 22, the 3rd gear the 23, the 4th gear 24 are respectively
Around respective central shaft rotation so that magnetron 6 while around the shaft 20 revolution with the
The central shaft of four gears 24 is rotating shaft rotation, and then makes magnetron 6 at the upper surface of target 3
Scanning.
In actual use, although magnetron 6 can be by target 3 according to predetermined track
Upper surface cover.But, due to the invariablenes turning speed of motor so that magnetron 6 is through number of times
More region (region that i.e. magnetron 6 track is overlapping) residence time is more, thus leads
Corrosion (consumption) speed causing this region target 3 is very fast, and the corrosion rate in other region is relatively
And then cause the utilization rate of target 3 relatively low slowly,.
Fig. 9 is the target erosion profile when existing drive mechanism drives magnetron to run.Wherein,
Abscissa is the target distance from the center to marginal position, and unit is mm；Vertical coordinate is target
Etch depth, unit is mm.From fig. 9, it can be seen that near the corruption of its central region
Erosion speed is very fast, and the corrosion rate near target rim region is relatively slow, and, target center
The most uneven with the etch rate at edge, it is only about 53% through measuring the utilization rate of target 3.
Summary of the invention
The technical problem to be solved in the present invention is aiming in inductively coupled plasma equipment depositing
Drawbacks described above, it is provided that a kind of magnetron sputtering apparatus, it is not changing the original operation of magnetron
The corrosion rate that can make target in the case of track is identical, such that it is able to improve the utilization of target
Rate.
Additionally, the present invention also provides for a kind of magnetron control method, it can not only cover target
The whole surface of material, and magnetron can be made equal in the diverse location time of staying of target material surface
Even, such that it is able to improve the utilization rate of target.
Solve above-mentioned technical problem be employed technical scheme comprise that a kind of magnetron sputtering of offer sets
Standby, including driving of reaction chamber, target, magnetron, driving described magnetron rotation and revolution
Motivation structure, described target is arranged on the top of described reaction chamber, and described magnetron is arranged on institute
Stating the top of target, under the driving of described drive mechanism, described magnetron scans described target
Surface, described drive mechanism is connected with described control device, and according to described control device
Control signal controls rotational velocity and revolution speed, the described magnetron sputtering apparatus of described magnetron
Also include: magnetron positioning unit and control device, wherein:
Described magnetron positioning unit, for determining the initial position of described magnetron；
Described control device, for according to described initial position, determining the operating week of magnetron
Phase, and according to controlling rotational velocity and the revolution speed of described drive mechanism described service cycle,
Thus on the premise of described magnetron is constant by each position number of times of target, control described magnetic
Keyholed back plate is residence time in described target unit are so that described magnetron is frequently passing through
The shorter residence time of target region, extend in the sparse target region of movement locus simultaneously
The time of staying, to improve the etching homogeneity of target.
Wherein, described control device includes speed controlling subelement, described speed controlling subelement
The revolution angular velocity and the spin velocity that make described magnetron meet formula (1) and formula respectively
(2):
In formula, ω 1 represents the revolution angular velocity of magnetron, unit: radian per second；
ω 2 represents the spin velocity of magnetron, unit: radian per second；
Ro1 represents the revolution-radius of magnetron, unit: millimeter；
Ro2 represents the rotation radius of magnetron, unit: millimeter；
R represents the distance between the center of magnetron center and magnetron motion track,
Unit: millimeter.
Wherein, described drive mechanism includes motor, gear assembly, the first connecting plate and control
Make the servo-driver of described motor speed, wherein:
Upper surface at described target is provided with bracing frame, and described motor is fixed on support frame as described above；
Described gear assembly includes n engaged successively along described first connecting plate length direction
Gear, wherein n is the integer more than 2, and described n gear is fixed on described first and connects
On plate；
Described first connecting plate and described gear assembly are positioned at outermost gear with described
The output shaft of motor connects, described magnetron and the gear farthest apart from the output shaft of described motor
Central shaft connect；
Under the driving of described motor, described first connecting plate drive described gear assembly and
Described magnetron revolves round the sun centered by the output shaft of described motor, meanwhile, described magnetron with away from
Rotation centered by the central shaft of the farthest gear of described motor output shaft；
Described servo-driver controls turning of motor according to the control signal of described control device
Speed, thus control rotational velocity and the revolution speed of described magnetron.
Wherein, described gear assembly includes engaging successively the first gear, the second gear,
Three gears and the 4th gear, wherein,
Described first gear is connected with the output shaft of described motor,
Described magnetron is connected with the central shaft of described 4th gear by the second connecting plate.
Wherein, described magnetron is fixed on one end of described second connecting plate, described second
The other end of connecting plate is provided with the first counterweight that the weight with described magnetron matches, in order to carry
The stability of high described magnetron rotation.
Wherein, described gear assembly is partial to one end setting of described first connecting plate, described
The other end of the first connecting plate is provided with and described gear assembly, described magnetron and described
The second counterweight that the weight sum of one counterweight matches, in order to improve the steady of described magnetron revolution
Qualitative.
Wherein, described drive mechanism includes absolute value encoder, described absolute value encoder with
Described servo-driver and described motor connect, in order to record described magnetron position and
Rotation and the number of turns of revolution, and the position of described magnetron and the number of turns of rotation and revolution are led to
Cross described servo-driver and feed back to described control device.
Wherein, described magnetron positioning unit includes signal emission element and signal receiving part,
Described signal emission element is used for sending magnetron framing signal, and described signal receiving part is used for
Receive the magnetron framing signal sent from described signal emission element；Wherein:
Described signal emission element is fixed on described magnetron, and described signal receiving part is solid
Be scheduled on support frame as described above and with described signal emission element to arrange position relative；Or, institute
Stating signal emission element to be fixed on support frame as described above, described signal receiving part is fixed on described
On magnetron and with described signal emission element to arrange position relative.
Wherein, described sensor signal emission element is Magnet, and described sensor signal receives
Parts are Hall switch integrated sensor.
The present invention also provides for a kind of magnetron control method, is used for improving in magnetron sputtering apparatus
The etching homogeneity of target, according to the initial position of described magnetron, determines the operating of magnetron
Cycle, and according to controlling rotational velocity and the revolution speed of magnetron described service cycle, in institute
State magnetron by each position number of times of target constant on the premise of, change described magnetron in institute
State residence time in target unit are so that described magnetron is in the target district of frequent process
The shorter residence time in territory, extends when the stop of the sparse target region of movement locus simultaneously
Between, to improve the etching homogeneity of target.
Wherein, revolution angular velocity and the spin velocity of described magnetron meets formula (1) respectively
With formula (2):
In formula, ω 1 represents the revolution angular velocity of magnetron, unit: radian per second；
ω 2 represents the spin velocity of magnetron, unit: radian per second；
Ro1 represents the revolution-radius of magnetron, unit: millimeter；
Ro2 represents the rotation radius of magnetron, unit: millimeter；
R represents the distance between the center of magnetron center and magnetron motion track,
Unit: millimeter.
The method have the advantages that
The magnetron sputtering apparatus that the present invention provides, at magnetron by each position number of times of target
On the premise of constant, make magnetron residence time in target unit are equal, i.e. at magnetic
In the case of keyholed back plate movement locus is constant, controls the movement velocity of magnetron, make magnetron in-orbit
Move with speed faster in the place that mark intersects, in the disjoint place of track with slower speed
Motion, so that magnetron residence time in target unit are is equal, so that target exists
The corrosion rate of various location is identical, and then improves the utilization rate of target, and this is possible not only to fall
The operating cost of low magnetron sputtering apparatus, and the time changing target can be reduced, thus carry
The utilization rate of high magnetron sputtering apparatus.
The magnetron control method that the present invention provides, at magnetron by each position of target time
On the premise of number is constant, control magnetron residence time in target unit are, i.e. at magnetic
In the case of keyholed back plate movement locus is constant, controls the movement velocity of magnetron, make magnetron in-orbit
Move with speed faster in the place that mark intersects, in the disjoint place of track with slower speed
Motion, so that it is equal to control magnetron residence time in target unit are, so that target
Material is identical in the corrosion rate of various location, and then improves the utilization rate of target.
Accompanying drawing explanation
Fig. 1 is the structure diagram of typical magnetron sputtering process equipment；
Fig. 2 is the structure diagram of the drive mechanism for driving magnetron；
The structure diagram of the magnetron sputtering apparatus that Fig. 3 provides for the embodiment of the present invention；
Fig. 4 is the structure chart of embodiment of the present invention drive mechanism；
Fig. 5 is the top view of embodiment of the present invention drive mechanism；
The track of magnetron when Fig. 6 is the driving magnetron operation of embodiment of the present invention drive mechanism
Figure；
The trajectory diagram of magnetron when Fig. 7 is the driving magnetron operation of existing drive mechanism；
Fig. 8 is that target erosion is bent when embodiment of the present invention drive mechanism drives magnetron to run
Line；
Fig. 9 is the target erosion profile when existing drive mechanism drives magnetron to run；
Figure 10 is control device, the flow chart of drive mechanism in the present embodiment；
Figure 11 is servomotor speed curves figure within a period of motion；
Figure 12 is the movement velocity trajectory diagram that magnetron runs 5 seconds；
Figure 13 is servomotor another speed curves figure within a period of motion.
Detailed description of the invention
For making those skilled in the art be more fully understood that technical scheme, knot below
Magnetron sputtering apparatus and magnetron control method that closing accompanying drawing provides the present invention are retouched in detail
State.
The magnetron control method that the present embodiment provides is to hit for improving magnetron sputtering apparatus
The etching homogeneity of material, this control method, according to the initial position of magnetron, determines magnetron
Service cycle, and according to controlling rotational velocity and the revolution speed of magnetron this service cycle, from
And on the premise of magnetron is constant by each position number of times of target, change magnetron at target
Residence time in unit are.In other words, in the case of magnetron motion track is constant,
Control the movement velocity of magnetron, make magnetron in the place of its track cross with speed faster
Motion, in the disjoint place of track with slower speed motion, so that magnetron is at target
In unit are, residence time is equal, and then improves the utilization rate of target.
Do not change due to technical scheme in prior art the period of motion of magnetron and
Movement locus, therefore, uses following known variables in technical scheme:
Magnetron revolution-radius: ro1=115/25.4 unit: millimeter
Magnetron rotation radius: ro2=55/25.4 unit: millimeter
The revolution angular velocity omega 1 (unit: radian) of magnetron and spin velocity ω 2 of magnetron
(unit: radian) meets following relation: ω 2=-(55 × 22) × ω 1/ (18 × 40).
Further, below equation is met:
(1) the movement locus formula of magnetron:
X=ro1 × cos (ω 1 × t)+ro2cos (ω 2 × t)
Y=ro1 × sin (ω 1 × t)+ro2 × sin (ω 2 × t)
In formula, X represents the abscissa of magnetron center point；Y represents the vertical of magnetron center point
Coordinate；ω 1 represents the revolution angular velocity of magnetron, unit: radian；ω 2 represents magnetron
Spin velocity, unit: radian；Ro1 represents the revolution-radius of magnetron, unit: millimeter；
Ro2 represents the rotation radius of magnetron, unit: millimeter；T represents the operation time of magnetron,
Unit: second.
(2)X2+Y2=R2
In formula, X represents the abscissa of magnetron center point；Y represents the vertical of magnetron center point
Coordinate；R represents the radius at the physical location distance movement locus center of magnetron center point, should
Value changes according to the actual motion position of magnetron.
Therefore, in technical scheme, the revolution angular velocity of magnetron and spin velocity
Meet formula respectively 1. with formula 2.:
In formula, ω 1 represents the revolution angular velocity of magnetron, unit: radian per second；ω 2 represents magnetic
The spin velocity of keyholed back plate, unit: radian per second；Ro1 represents the revolution-radius of magnetron, single
Position: millimeter；Ro2 represents the rotation radius of magnetron, unit: millimeter；R represents magnetron
Distance between the center of center and magnetron motion track, unit: millimeter.
The magnetron control method that the present embodiment provides, at magnetron by each position of target
On the premise of number of times is constant, make magnetron residence time in target unit are equal, from
And make target equal in the corrosion rate of various location, and then improve the utilization rate of target.Real
Trampling proof, the magnetron control method utilizing the present invention to provide controls the scanning of magnetron, permissible
The utilization rate of target is brought up to more than 60%.
The structure diagram of the magnetron sputtering apparatus that Fig. 3 provides for the embodiment of the present invention.Refer to
Fig. 3, magnetron sputtering apparatus include reaction chamber 1, electrostatic chuck, target 3, magnetron 6,
For driving the drive mechanism 7 of magnetron 6 rotation and revolution, magnetron positioning unit and control
Device 13 processed, electrostatic chuck is used for carrying workpiece to be machined, and it is arranged in reaction chamber 1
Bottom.Target 3 is arranged on the top in reaction chamber 1, i.e. target 3 and electrostatic chuck
Position is relative.Magnetron 6 is arranged on the top of target 3, in order to improve the sputtering speed of target 3
Rate.Magnetron positioning unit is for determining the initial position of described magnetron.Magnetron 6 with drive
Motivation structure 7 connects, and the control end of drive mechanism 7 is connected with controlling device 13, drive mechanism
7 drive magnetron 6 to scan the upper surface of target 3 under the control controlling device 13.
Being also arranged above bracing frame 4 at target 3, bracing frame 4 is a closure member, bracing frame
Forming a sealing space with target 3, magnetron 6 is arranged in this sealing space.Sealing
Deionized water it is full of, to reduce magnetron 6 and the temperature of target 3 in space.
Fig. 4 is the structure chart of embodiment of the present invention drive mechanism.Fig. 5 is the embodiment of the present invention
The top view of drive mechanism.In Figure 5, " A " represents the minimum diameter of magnetron scanning track,
" B " represents the maximum gauge of magnetron scanning track, and " C " represents that gear assembly end is swept
Retouch track.
See also Fig. 3, Fig. 4 and Fig. 5, drive mechanism include motor 11, gear assembly,
First connecting plate 28 and the servo-driver 12 of control motor 11 rotating speed.Motor 11 with watch
The input taking driver 12 connects, and controls the outfan of device 13 and servo-driver 12
Connecting, servo-driver 12 can control motor 11 according to the control signal controlling device 13
Rotating speed.
Wherein, motor 11 is fixed on bracing frame 4.
In order to ensure not change the period of motion and the movement locus of original magnetron, it is necessary first to
Determine the initial position of magnetron, in the present invention, use magnetron positioning unit to determine magnetic control
The initial position of pipe, the i.e. initial point of magnetron motion track.
When magnetron positioning unit drive mechanism brings into operation, magnetron positioning unit is first
The magnetron original position signal transmission detected extremely is controlled device 13, so that controlling device
The position of magnetron 6 can be accurately acquired, thus be more accurately controlled turning of motor 11
Speed.
In the present embodiment, gear assembly includes the arranged along the first connecting plate 28 length direction
One gear (not shown), the second gear the 22, the 3rd gear 23 and the 4th gear 24,
First gear, the second gear the 22, the 3rd gear 23 and the 4th gear 24 engages successively and
It is connected with the first connecting plate 28 respectively.
First connecting plate the 28, first gear is connected with the output shaft of motor 11, magnetron 6
Connected by the central shaft of the second connecting plate 25 with the 4th gear 24 farthest apart from motor output shaft
Connect.Under the driving of motor 11, the first gear, the second gear the 22, the 3rd gear 23 with
And the 4th gear 24 rotating around respective central shaft rotation, simultaneously at the band of the first connecting plate 28
Revolve round the sun centered by the output shaft of motor 11 under Dong.At the first connecting plate 28 and the 4th gear
Under the drive of 24, magnetron 6 revolve round the sun centered by the output shaft by motor 11 while with
Rotation centered by the central shaft of four gears 24.Therefore, by controlling the rotating speed of motor 11, i.e.
Revolution and the rotational velocity of magnetron 6 can be controlled.
In the present embodiment, magnetron 6 is arranged on one end of the second connecting plate 25, second even
The other end of fishplate bar 25 is provided with the first counterweight 27 that the weight with magnetron matches, and first joins
Weigh being equal in weight of the weight of 27 and magnetron 6, such that it is able to make drive mechanism even running,
Improve the stability of magnetron 6 rotation, and then the service life of drive mechanism can be improved.
Further, gear assembly is partial to one end of the first connecting plate 28 and is arranged, and connects first
The other end of plate 28 arranges the second counterweight 26, the weight of the second counterweight 26 and gear assembly,
The weight sum coupling of magnetron 6 and the first counterweight 27.Can carry by the second counterweight 26
The stability of high magnetron 6 revolution, so that drive mechanism more even running, and then improve
The service life of drive mechanism.
In the present embodiment, magnetron positioning unit is for determining the initial position of magnetron.Control
The initial position that device processed determines according to magnetron positioning unit, determines the operating week of magnetron
Phase, and according to controlling rotational velocity and the revolution speed of drive mechanism this service cycle.Specifically,
Servo-driver controls the rotating speed of motor 11 according to the control signal controlling device, thus controls
The rotational velocity of magnetron 6 and revolution speed.Control device and include speed controlling subelement and fortune
Dynamic TRAJECTORY CONTROL subelement, speed controlling subelement make driving magnetron 6 revolution angular velocity and
With formula 2. 1. spin velocity meet formula respectively:
In formula, ω 1 represents the revolution angular velocity of magnetron, unit: radian per second；ω 2 represents magnetic
The spin velocity of keyholed back plate, unit: radian per second；Ro1 represents the revolution-radius of magnetron, single
Position: millimeter；Ro2 represents the rotation radius of magnetron, unit: millimeter；R represents magnetron
Distance between the center of center and magnetron motion track, unit: millimeter.
The track of magnetron when Fig. 6 is the driving magnetron operation of embodiment of the present invention drive mechanism
Figure.The trajectory diagram of magnetron when Fig. 7 is the driving magnetron operation of existing drive mechanism.At Fig. 6
With in Fig. 7, the revolution-radius ro1 of magnetron is 115/25.4, the rotation radius ro2 of magnetron
Being 55/25.4, the sweep time of magnetron is 5 seconds.Comparison diagram 6 and Fig. 7 it can be seen that this
The tracing point ratio of inventive embodiments magnetron is more uniform, and the distribution density of tracing point is uniform.
Fig. 8 is that target erosion is bent when embodiment of the present invention drive mechanism drives magnetron to run
Line.Fig. 9 is the target erosion profile when existing drive mechanism drives magnetron to run.At Fig. 8
With in Fig. 9, abscissa represents the target center distance to edge, unit: millimeter (mm)；
Vertical coordinate represents the degree of depth of target erosion, unit: millimeter (mm).Comparison diagram 8 and Fig. 9 can
To find out, when the present embodiment drive mechanism drives magnetron, the corrosion curve of target is evenly.
In the present embodiment, position that drive mechanism also includes recording magnetron 6 and from
Turn and the absolute value encoder (not shown) of the number of turns of revolution, absolute value encoder with watch
Taking driver 12 and motor 11 connects, absolute value encoder is according to the rotation circle of motor 11
Number is possible not only to record the current position of magnetron 6 and rotation and the number of turns of revolution, and will
The number of turns of the position of magnetron 6 and rotation and revolution feeds back to control by servo-driver 12
Device 13 processed, controls device 13 and records the current position of magnetron 6 and rotation and revolution
The number of turns.So when drive mechanism is owing to the reasons such as power down are time out of service, can be by definitely
Value encoder and control device 13 and record the position of magnetron 6 and rotation and the number of turns of revolution,
After re-powering, drive mechanism can make magnetron 6 continue fortune according to the track before power down
OK.
In the present embodiment, magnetron positioning unit includes that signal emission element 14 and signal receive
Parts 15, signal emission element 14 is used for sending magnetron framing signal, signal receiving part
15 for receiving the magnetron framing signal sent from signal emission element 14.
As a kind of embodiment, since it is considered that inspection environment is in water, and magnetic control
Pipe carries out revolving round the sun and adds the selection of rotation, so the present invention uses magnetic proximity sensor to carry out determining
Position.As it is shown on figure 3, signal emission element 14 is fixed on magnetron 6, at magnetron 6
Arrive at movement locus outer, bracing frame 4 above it is installed signal receiving part
15 and with signal emission element 14 to arrange position relative；Connect when magnetron 6 moves to signal
When receiving below parts 15, signal receiving part 15 receives signal, now transports as magnetron
The initial point of dynamic track.Or, signal emission element 14 is fixed on bracing frame 4, signal
Receive parts 15 be fixed on magnetron 6 and with signal emission element 14 position phase is set
Right.When signal receiving part 15 receives the magnetron location letter that signal emission element 14 sends
Number time, the position at now magnetron 6 place is defined as the starting point of magnetron motion track.
In the present embodiment, signal emission element 14 is Magnet, and signal receiving part 15 is suddenly
You switch integrated sensor.In order to improve the precision of magnetron positioning unit, guaranteeing that Hall is opened
While the switching curve of pass integrated sensor intersects with the magnetic field of Magnet, also to reduce magnetic as far as possible
The intersecting area in the magnetic field of ferrum and Hall switch integrated sensor.
Servomotor of the present invention is to control to carry out its speed by PLC to turn, and Figure 11 is that servomotor exists
Speed curves figure in one period of motion.Since it is desired that public affairs turn around in ensureing 1 second,
In public affairs turn around, the rotation speed change of servomotor.Figure 12 is the motion that magnetron runs 5 seconds
Speed trajectory figure, as shown in figure 12, after magnetron runs 5 seconds, magnetron is returned to speed
Identical position is (in terms of Figure 12, although the beginning and end of magnetron motion speed is the most complete
Overlap, but beginning and end is respectively positioned on the motion of extension, i.e. magnetron of movement velocity track
Speed is identical), after i.e. 5 seconds, the movement velocity track of magnetron is with 5 seconds as cycle but not
It is confined to 5 seconds, simply can exist as the period of motion for repeating motion with magnetron motion track
In this example as a example by 5 seconds.In order to determine servomotor position of rotation, servomotor is installed
Absolute value encoder, the effect of absolute encoder be exactly record position and by rotate the number of turns final
Pass to PLC, the power down conservation zone being stored in PLC, and absolute value encoder record itself
Data the most also will keep, even if so system runs into unexpected power down, re-power
After, PLC still can guarantee that magnetron continues motion according to the track before power down.
As another embodiment, signal emission element 14 is arranged in magnetron counterweight,
Magnet is installed in counterweight 6 the most in the diagram, is positioned at counterweight track outer signal installed above
Receive parts 15, due to counterweight 6 and magnetron 27 in motor process straight at same all the time
On line, so when counterweight 6 arrives outer, signal receiving part 15 has signal, now
Magnetron 27 is in the position nearest from the target center of circle.In order to ensure precision, signal receiving part
The switching curve of 15 intersects area and reduces as far as possible with the magnetic field of signal emission element 14.Same sample
The control unit used in example is identical with example one with control method, such as Figure 10, but due to
Now magnetron initial point signal be magnetron from the target center of circle the most nearby, magnetron motion is from there
Setting in motion, so corresponding motor speed controlling curve the most just runs according to Figure 13.Watching
Take and absolute value encoder is installed on the gear shaft that motor connects, be used for recording the position of servomotor
It is also prevented from power down simultaneously and loses magnetron position.With in sample instance with 5 seconds as cycle, but not
Being confined to 5 seconds, the principle of selection cycle is still that repeatable motion is with magnetron motion track
Foundation.
Figure 10 is control device, the flow chart of drive mechanism in the present embodiment.Refer to Figure 10,
Control device 13 to transmit to servo-driver 12, the control signal controlling motor 11 by watching
Take driver 12 to control motor 11 and run, motor 11 drive gear assemblies and the first connecting plate
28 rotate centered by the output shaft of motor 11, and then drive magnetron 6 to scan target 3
Surface.Meanwhile, absolute value encoder by include the current position of magnetron 6 and rotation and
The encoder feedback signal transmission of the number of turns of revolution is transmitted to controlling dress by servo-driver 12
Put, the position of the control current magnetron of device record 6 and rotation and the number of turns of revolution.
The present embodiment controls device and controls subelement by speed controlling subelement and movement locus
Control running orbit and the speed of service of magnetron, so that magnetron is in target material surface unit are
On the time of staying equal so that target is unanimous on the whole in the corrosion rate of various location,
It is more than 60% through measuring the utilization rate understanding target.
It should be noted that in the present embodiment, gear assembly includes four gears, but this
Invention is not limited to and this.Gear assembly can include n gear, and wherein, n is for being more than
In the integer of 2.N gear is fixed on the first connecting plate 28 and engages successively, gear train
In part, a gear of outermost (end) is connected with the output shaft of motor 11, magnetron 6
On the central shaft of the farthest gear of output shaft being fixed on distance motor 11.Driving of motor 11
Under Dong, magnetron 6 revolves round the sun centered by the output shaft of motor, and with distance motor output shaft
Rotation centered by the central shaft of remote gear.Therefore, permissible by controlling the rotating speed of motor 11
Control magnetron 6 revolution and the speed of rotation.
The magnetron sputtering apparatus that the present embodiment provides, at magnetron by each position of target time
On the premise of number is constant, makes magnetron residence time in target unit are equal, i.e. exist
In the case of magnetron motion track is constant, controls the movement velocity of magnetron, make magnetron exist
Move with speed faster in the place of track cross, in the disjoint place of track with slower speed
Degree motion, so that magnetron residence time in target unit are is equal, so that target
Identical in the corrosion rate of various location, and then the utilization rate of raising target, this is possible not only to
Reduce the operating cost of magnetron sputtering apparatus, and the time changing target can be reduced, thus
Improve the utilization rate of magnetron sputtering apparatus.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and adopt
Illustrative embodiments, but the invention is not limited in this.General in this area
For logical technical staff, without departing from the spirit and substance in the present invention, can make
Various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a magnetron sputtering apparatus, it is characterised in that described magnetron sputtering apparatus includes instead
Answer chamber, target, magnetron, driving described magnetron rotation and the drive mechanism of revolution, magnetic
Keyholed back plate positioning unit and control device, described target is arranged on the top of described reaction chamber, institute
State magnetron and be arranged on the top of described target, under the driving of described drive mechanism, described magnetic
Keyholed back plate scans the surface of described target, and described drive mechanism is connected with controlling device, and according to institute
State rotational velocity and the revolution speed of the control signal described magnetron of control controlling device, its
In:
Described magnetron positioning unit, for determining the initial position of described magnetron；
Described control device, for according to described initial position, determining the operating week of magnetron
Phase, and according to controlling rotational velocity and the revolution speed of described drive mechanism described service cycle,
Thus on the premise of described magnetron is constant by each position number of times of target, control described magnetic
Keyholed back plate is residence time in described target unit are so that described magnetron is frequently passing through
The shorter residence time of target region, extend in the sparse target region of movement locus simultaneously
The time of staying, to improve the etching homogeneity of target；
Described drive mechanism includes motor, gear assembly, the first connecting plate and controls described
The servo-driver of motor speed, wherein:
Upper surface at described target is provided with bracing frame, and described motor is fixed on support frame as described above；
Described gear assembly includes n engaged successively along described first connecting plate length direction
Gear, wherein n is the integer more than 2, and described n gear is fixed on described first and connects
On plate；
Described first connecting plate and described gear assembly are positioned at outermost gear with described
The output shaft of motor connects, described magnetron and the gear farthest apart from the output shaft of described motor
Central shaft connect；
Under the driving of described motor, described first connecting plate drive described gear assembly and
Described magnetron revolves round the sun centered by the output shaft of described motor, meanwhile, described magnetron with away from
Rotation centered by the central shaft of the farthest gear of described motor output shaft；
Described servo-driver controls turning of motor according to the control signal of described control device
Speed, thus control rotational velocity and the revolution speed of described magnetron.
Magnetron sputtering apparatus the most according to claim 1, it is characterised in that described control
Device processed includes that speed controlling subelement, described speed controlling subelement make the public affairs of described magnetron
Tarnsition velocity and spin velocity meet formula (1) and formula (2) respectively:
In formula, ω 1 represents the revolution angular velocity of magnetron, unit: radian per second；
ω 2 represents the spin velocity of magnetron, unit: radian per second；
Ro1 represents the revolution-radius of magnetron, unit: millimeter；
Ro2 represents the rotation radius of magnetron, unit: millimeter；
R represents the distance between the center of magnetron center and magnetron motion track,
Unit: millimeter.
Magnetron sputtering apparatus the most according to claim 1, it is characterised in that described tooth
Wheel assembly includes the first gear, the second gear, the 3rd gear and the 4th gear engaged successively,
Wherein,
Described first gear is connected with the output shaft of described motor,
Described magnetron is connected with the central shaft of described 4th gear by the second connecting plate.
Magnetron sputtering apparatus the most according to claim 3, it is characterised in that described magnetic
Keyholed back plate is fixed on one end of described second connecting plate, and the other end at described second connecting plate is provided with
The first counterweight matched with the weight of described magnetron, in order to improve described magnetron rotation
Stability.
Magnetron sputtering apparatus the most according to claim 4, it is characterised in that described tooth
Wheel assembly is partial to one end of described first connecting plate and is arranged, at the other end of described first connecting plate
It is provided with and the weight sum phase of described gear assembly, described magnetron and described first counterweight
Second counterweight of coupling, in order to improve the stability of described magnetron revolution.
Magnetron sputtering apparatus the most according to claim 1, it is characterised in that described in drive
Motivation structure includes absolute value encoder, described absolute value encoder and described servo-driver and
Described motor connects, in order to record the position of described magnetron and rotation and the number of turns of revolution,
And described servo-driver is passed through in the position of described magnetron and the number of turns of rotation and revolution
Feed back to described control device.
Magnetron sputtering apparatus the most according to claim 1, it is characterised in that described magnetic
Keyholed back plate positioning unit includes signal emission element and signal receiving part, described signal emission element
For sending magnetron framing signal, described signal receiving part is for receiving from described signal
The magnetron framing signal that emission element sends；Wherein:
Described signal emission element is fixed on described magnetron, and described signal receiving part is solid
Be scheduled on support frame as described above and with described signal emission element to arrange position relative；Or, institute
Stating signal emission element to be fixed on support frame as described above, described signal receiving part is fixed on described
On magnetron and with described signal emission element to arrange position relative.
Magnetron sputtering apparatus the most according to claim 7, it is characterised in that described letter
Number emission element is Magnet, and described signal receiving part is Hall switch integrated sensor.
9. a magnetron control method, in employing claim 1-8 described in any one
Magnetron sputtering apparatus, for improving the etching homogeneity of target in magnetron sputtering apparatus, its feature
It is, according to the initial position of described magnetron, determines the service cycle of magnetron, and according to
Control rotational velocity and the revolution speed of magnetron described service cycle, thus at described magnetron
By each position number of times of target constant on the premise of, change described magnetron at described target list
The long-pending upper residence time of plane so that described magnetron is in the stop of the target region of frequent process
Time shortens, and extends the time of staying in the sparse target region of movement locus simultaneously, to improve
The etching homogeneity of target.
Magnetron control method the most according to claim 9, it is characterised in that institute
State the revolution angular velocity of magnetron and spin velocity meet formula (1) and formula (2) respectively:
In formula, ω 1 represents the revolution angular velocity of magnetron, unit: radian per second；
ω 2 represents the spin velocity of magnetron, unit: radian per second；
Ro1 represents the revolution-radius of magnetron, unit: millimeter；
Ro2 represents the rotation radius of magnetron, unit: millimeter；
R represents the distance between the center of magnetron center and magnetron motion track,
Unit: millimeter.
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| CN106958011B (en) * | 2017-05-17 | 2019-02-22 | 赵其煜 | Dynamic controls the control device and control method of sputtering target material utilization rate |
| CN110629173B (en) * | 2018-06-25 | 2021-12-17 | 北京北方华创微电子装备有限公司 | Magnetron control method, magnetron control device and magnetron sputtering equipment |
| CN110894590B (en) * | 2018-09-13 | 2021-08-13 | 北京北方华创微电子装备有限公司 | Magnetron sputtering method, control module and equipment for magnetron sputtering equipment |
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| US20050236267A1 (en) * | 2004-04-27 | 2005-10-27 | Paul Rich | Methods and apparatus for controlling rotating magnetic fields |
| CN1890399A (en) * | 2003-12-12 | 2007-01-03 | 应用材料公司 | Mechanism for varying the spacing between sputter magnetron and target |
| CN1914351A (en) * | 2004-03-24 | 2007-02-14 | 应用材料股份有限公司 | Selectable dual position magnetron |
| CN102074446A (en) * | 2010-12-08 | 2011-05-25 | 清华大学 | Magnetron with adjustable compound trace |
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2012
- 2012-05-16 CN CN201210152625.0A patent/CN103422065B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1890399A (en) * | 2003-12-12 | 2007-01-03 | 应用材料公司 | Mechanism for varying the spacing between sputter magnetron and target |
| CN1914351A (en) * | 2004-03-24 | 2007-02-14 | 应用材料股份有限公司 | Selectable dual position magnetron |
| US20050236267A1 (en) * | 2004-04-27 | 2005-10-27 | Paul Rich | Methods and apparatus for controlling rotating magnetic fields |
| CN102074446A (en) * | 2010-12-08 | 2011-05-25 | 清华大学 | Magnetron with adjustable compound trace |
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