CN103400913A - Rectangular imaged silicon substrate for growing hexagonal-phase GaN - Google Patents
Rectangular imaged silicon substrate for growing hexagonal-phase GaN Download PDFInfo
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- CN103400913A CN103400913A CN2013103063347A CN201310306334A CN103400913A CN 103400913 A CN103400913 A CN 103400913A CN 2013103063347 A CN2013103063347 A CN 2013103063347A CN 201310306334 A CN201310306334 A CN 201310306334A CN 103400913 A CN103400913 A CN 103400913A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 43
- 239000010703 silicon Substances 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 title claims abstract description 43
- 238000002955 isolation Methods 0.000 claims abstract description 34
- 229910003978 SiClx Inorganic materials 0.000 claims description 14
- 230000018199 S phase Effects 0.000 claims description 10
- 239000013078 crystal Substances 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 206010020718 hyperplasia Diseases 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
本发明公开了一种用于生长六方相GaN的矩形图形化硅衬底，包括硅（111）面衬底本体，在硅衬底本体上表面加工有条状隔离带，条状隔离带由相互垂直、宽度相同的纵隔离带和横隔离带构成，将硅衬底本体分割成了多个的矩形生长平台，其特征在于：矩形生长平台的任一角平分线与硅（111）面上六方排列的原子对应的正六边形的任一对角线的夹角在0～5°的范围内。对上述夹角范围的限定保证了六方相GaN生长后形成的横沟槽和纵沟槽的宽度基本一致。这为外延层的晶体质量和后续芯片制程的可靠性提供了有力保障，也彻底解决了现有矩形图形化硅衬底技术中，矩形生长平台方向的不确定性影响GaN晶体质量和芯片良率、可靠性的问题。
The invention discloses a rectangular patterned silicon substrate for growing hexagonal GaN, which includes a silicon (111) plane substrate body, and a strip-shaped isolation zone is processed on the upper surface of the silicon substrate body, and the strip-shaped isolation zones are formed by mutual Composed of vertical and horizontal isolation strips with the same vertical and width, the silicon substrate body is divided into multiple rectangular growth platforms. It is characterized in that: the bisector of any angle of the rectangular growth platform is arranged in a hexagonal manner on the silicon (111) surface The included angle of any diagonal of the regular hexagon corresponding to the atoms is in the range of 0° to 5°. The restriction on the range of the included angle ensures that the widths of the horizontal grooves and the vertical grooves formed after the growth of the hexagonal GaN are basically the same. This provides a strong guarantee for the crystal quality of the epitaxial layer and the reliability of the subsequent chip manufacturing process, and it also completely solves the problem that the uncertainty of the direction of the rectangular growth platform affects the quality of the GaN crystal and the yield of the chip in the existing rectangular patterned silicon substrate technology. , Reliability issues.
Description
Technical field
The present invention relates to the growth technology of semi-conducting material, relate in particular to a kind of rectangular graph SiClx substrate be used to the six side's phase GaN that grow.
Background technology:
III take GaN as representative/V nitride semi-conductor material is the third generation semi-conducting material after silicon and GaAs, obtains in recent years develop rapidly.III/V nitride comprises GaN, AlN, InN, InGaN and AlGaN etc., it has the direct band gap of 1.9～6.2eV continuous variable, covered from ultraviolet to far emission wavelength, and have the characteristics such as excellent physics, chemical stability, high saturated electrons mobility, aspect the opto-electronic device of blue, green and ultraviolet band, obtaining a wide range of applications, particularly aspect indigo plant, green light LED.
Because the GaN monocrystalline is difficult to obtain, the epitaxial growth of GaN is many to be carried out on foreign substrate.Except the most frequently used sapphire (c face) substrate and 6H-SiC substrate, silicon (111) face substrate is also by extensive concern in recent years.Silicon substrate have low price, size larger, be easy to peel off, conduction, thermal conductivity advantages of higher relatively, and the processing technology of silicon materials and integrated technology quite ripe, make silicon substrate GaN-based LED have the potential advantages that are easy to large-scale integrated.Yet between Si and GaN, have huge lattice mismatch and thermal mismatching, this can introduce huge stress in growth course, causes obtaining high-quality GaN base LED film very difficult on silicon substrate.
At present, existing many units of industry have solved the difficult problem of silicon substrate epitaxial growth high-quality GaN base LED film, and have high-caliber silicon substrate GaN-based LED product to release.wherein whole silicon substrate being divided into to a plurality of regularly arranged independently rectangle growth platform (being rectangular graph SiClx substrate) is one of present mainstream technology route, there are many orthogonal strip isolation strip that silicon substrate is divided into to the independently rectangle growth platform that a plurality of equally distributed shape sizes are identical, described isolation strip can be also can caving in of projection, the GaN material can not be on described isolation strip direct growth, and described isolation is not joined to guarantee epitaxial loayer on each growth platform and the epitaxial loayer on adjacent growth platform with certain width, thereby the traverse furrow groove and the longitudinal furrow groove that there is no the GaN growth between described each growth platform, have been formed, described groove can effectively discharge silicon substrate and epitaxial loayer are introduced due to lattice mismatch and thermal mismatching in the heteroepitaxial growth process huge stress, greatly reduced the crackle in described epitaxial loayer, reduced dislocation density, thereby obtain high-quality GaN base LED thin-film material.
But, existing rectangular graph SiClx substrate technology, the boundary line of not considering the rectangle growth platform with respect to the crystal orientation of silicon (111) face on the epitaxially grown impact of six side's phase GaN on it.The surface of described rectangle growth platform is silicon (111) face, if its boundary line is unreasonable with respect to the crystal orientation design of silicon (111) face, will cause the described traverse furrow groove that forms in the GaN growth course different with the width of longitudinal furrow groove, the unequal power distribution of epitaxial loayer, the crackle hyperplasia, dislocation density increases, and crystal mass descends, and brings larger harmful effect also can for yield and the reliability of follow-up chip processing procedure.Why producing the problems referred to above, is because described boundary line is determining the atomic arrangement situation along boundary line with respect to the crystal orientation of silicon (111) face, and six side's phase GaN depend on the atomic arrangement situation along boundary line along the lateral growth speed of boundary line.Six side's phase GaN aufwuchsplates are (0001) face, and be orthohexagonal the same as the atom of silicon (111) face arranged, and GaN is very fast along the direction growth rate at each angle of orthohexagonal, and growth rate is slower along the direction on regular hexagon limit.The rectangle growth platform has in twos parallel four edges boundary line, and wherein the adjacent edge boundary line is mutually vertical, corresponding orthogonal crystal orientation.If described adjacent edge boundary line is unreasonable with respect to the crystal orientation design of silicon (111) face, make along the atomic arrangement situation difference in adjacent edge boundary line larger, thereby cause GaN different along the lateral growth speed in adjacent edge boundary line, one side that growth rate is fast, the groove that forms is narrower, one side that growth rate is slow, the groove of formation is wider.
Summary of the invention:
The object of the present invention is to provide a kind of rectangular graph SiClx substrate be used to the six side's phase GaN that grow, it can make the width of longitudinal furrow groove and traverse furrow groove basically identical, thereby for the crystal mass of epitaxial loayer and the reliability of follow-up chip processing procedure provide powerful guarantee, also thoroughly solved in existing rectangular graph SiClx substrate technology, the uncertainty of rectangle growth platform direction affects the problem of GaN crystal mass and chip yield, reliability.
The object of the present invention is achieved like this:
A kind of rectangular graph SiClx substrate be used to the six side's phase GaN that grow, comprise silicon (111) face substrate bulk, upper surface (silicon (111) face) in silicon (111) face substrate bulk is processed with the strip isolation strip, the strip isolation strip consists of mutual He Heng isolation strip, vertical isolation strip vertical, that width is identical, the strip isolation strip has been divided into a plurality of rectangle growth platform by the upper surface of silicon substrate body, it is characterized in that:
Arbitrary angular bisector of rectangle growth platform and its surface are that the atom pair of Hexagonal array on silicon (111) face orthohexagonal arbitrary cornerwise angle of answering is in the scope of 0～5 °.
Industry adopts the main reference plane of (110) face as silicon (111) face substrate usually, and main flat limit is at<1-10 > position, above-mentioned geometrical relationship can be described as: the angle on the Yu Zhuping limit, arbitrary boundary line of rectangle growth platform is in 10～20 °, 40～50 ° or 70～80 °.
The length of side of rectangle growth platform is in the scope of 0.1mm～5mm.
The width of strip isolation strip is greater than 2um.
Due to can not direct growth GaN on the strip isolation strip, thereby, along with the growth of GaN, at place, strip isolation strip, can form the groove that there is no the GaN growth, but because GaN has certain lateral growth speed, the width of groove is usually less than the width of strip isolation strip.Corresponding with He Heng isolation strip, vertical isolation strip, groove also is divided into longitudinal furrow groove and traverse furrow groove.
diagonal and the scope of its surface atom pair that be silicon (111) face on the Hexagonal array orthohexagonal arbitrary cornerwise angle of the answering arbitrary boundary line Yu Zhuping limit<1-10 that in other words limit described rectangle growth platform of the present invention by limiting the rectangle growth platform > angular range, the boundary line of rectangle growth platform and the relative crystal orientation of silicon (111) face substrate have been determined, be boundary line and the Si(111 of rectangle growth platform) position relationship of atomic arrangement on face, thereby can guarantee along near the atomic arrangement two adjacent edge boundary lines of rectangle growth platform basically identical, make GaN basic identical along the lateral growth speed in adjacent edge boundary line, therefore can make the width of described longitudinal furrow groove and traverse furrow groove basically identical, the reliability of this crystal mass for epitaxial loayer and follow-up chip processing procedure provides powerful guarantee, also thoroughly solved in existing rectangular graph SiClx substrate technology, the uncertainty of rectangle growth platform direction affects GaN crystal mass and chip yield, the problem of reliability.
The accompanying drawing explanation:
Fig. 1 is the schematic top plan view of rectangular graph SiClx substrate of the present invention;
Fig. 2 is the relative position relation schematic diagram of atomic arrangement structure on the boundary line of rectangle growth platform of the present invention and silicon (111) face.
Fig. 3 is the schematic top plan view after Grown six side's phase GaN films provided by the invention.
Embodiment:
Below in conjunction with embodiment and contrast accompanying drawing method of the present invention is further detailed.
a kind of rectangular graph SiClx substrate be used to the six side's phase GaN that grow, comprise silicon substrate body 1, upper surface (silicon (111) face) 5 in silicon (111) face substrate bulk 1 is processed with strip isolation strip 2, strip isolation strip 2 is by mutually vertical, the vertical isolation strip 3 that width is identical and horizontal isolation strip 4 form, strip isolation strip 2 has been divided into a plurality of rectangle growth platform 5 by the upper surface of silicon (111) face substrate bulk 1, orthohexagonal arbitrary cornerwise angle α that on arbitrary angular bisector of rectangle growth platform 5 and silicon (111) face, the atom pair of Hexagonal array is answered is 0～5 °.
Arbitrary boundary line Yu Zhuping limit<1-10 of rectangle growth platform 5 > 6 angle α is in 10～20 °, 40～50 ° or 70～80 °.
The length of side m of rectangle growth platform 5 is 0.1mm～5mm.
The width d of strip isolation strip 2 is greater than 2um.
Due to can not direct growth GaN on the strip isolation strip, thereby, along with the growth of GaN, at 2 places, strip isolation strip, can form the groove that there is no the GaN growth, but because GaN has certain lateral growth speed, the width of groove is usually less than the width of strip isolation strip.Corresponding with vertical isolation strip 3 and horizontal isolation strip 4, groove also is divided into longitudinal furrow groove 7 and traverse furrow groove 8.
When the orthohexagonal arbitrary cornerwise angle α that answers when the atom pair of Hexagonal array on arbitrary angular bisector of rectangle growth platform 5 and silicon (111) face was 0～5 °, the longitudinal furrow groove 7 that forms after the GaN growth and the width of traverse furrow groove 8 were basically identical.The reliability of this crystal mass for epitaxial loayer and follow-up chip processing procedure provides powerful guarantee, also thoroughly solved in existing rectangular graph SiClx substrate technology, the uncertainty of rectangle growth platform direction affects the problem of GaN crystal mass and chip yield, reliability.
Claims (3)
1. rectangular graph SiClx substrate be used to the six side's phase GaN that grow, comprise silicon (111) face substrate bulk, upper surface (silicon (111) face) in silicon (111) face substrate bulk is processed with the strip isolation strip, the strip isolation strip is by mutually vertical, the He Heng isolation strip, vertical isolation strip that width is identical forms, the strip isolation strip has been divided into a plurality of rectangle growth platform by the upper surface of silicon substrate body, it is characterized in that: orthohexagonal arbitrary cornerwise angle that on arbitrary angular bisector of rectangle growth platform and silicon (111) face, the atom pair of Hexagonal array is answered is 0～5 °.
2. rectangular graph SiClx substrate according to claim 1, is characterized in that: arbitrary boundary line Yu Zhuping limit<1-10 of rectangle growth platform > angle α be in 10～20 °, 40～50 ° or 70～80 °.
3. rectangular graph SiClx substrate according to claim 3, it is characterized in that: the length of side of rectangle growth platform is 0.1mm～5mm.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746051A (en) * | 2013-12-04 | 2014-04-23 | 南昌大学 | Silicon substrate having edge isolation structure |
| CN103824854A (en) * | 2014-02-22 | 2014-05-28 | 石以瑄 | Exchange circuit and microwave integrated circuit which have improved line width evenness and fewer defects in channel and are based on high-electron-mobility transistor |
| CN107123715A (en) * | 2017-04-28 | 2017-09-01 | 海迪科（南通）光电科技有限公司 | A kind of positive tetragonal patterned substrate |
| CN107910244A (en) * | 2017-11-01 | 2018-04-13 | 大连芯冠科技有限公司 | GaN epitaxial growth method using silicon pattern substrate |
| CN111785609A (en) * | 2019-04-04 | 2020-10-16 | 世界先进积体电路股份有限公司 | Semiconductor structure and method of making the same |
| TWI718506B (en) * | 2019-03-25 | 2021-02-11 | 世界先進積體電路股份有限公司 | Semiconducotr structure and method for fabricating the same |
| CN112563120A (en) * | 2020-12-29 | 2021-03-26 | 广西华智芯半导体科技有限公司 | Epitaxial structure of gallium nitride material |
| CN113838952A (en) * | 2021-09-06 | 2021-12-24 | 厦门乾照半导体科技有限公司 | Epitaxial structure, chip and preparation method based on Nano-LED application |
| CN114744088A (en) * | 2022-03-11 | 2022-07-12 | 南昌大学 | Graphical deflection angle silicon substrate and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10193A (en) * | 1853-11-01 | Machine for turning cylinders of wood | ||
| CN1490844A (en) * | 2002-10-16 | 2004-04-21 | 中国科学院半导体研究所 | Lateral epitaxial growth method of gallium nitride and its compound semiconductor |
| CN1697205A (en) * | 2005-04-15 | 2005-11-16 | 南昌大学 | Method for preparing indium gallium aluminum nitrogen thin film and light-emitting device on silicon substrate |
| CN1953220A (en) * | 2005-04-15 | 2007-04-25 | 南昌大学 | A method for preparing indium-gallium-aluminium-nitrogen film and luminescent device on the silicon substrate |
| US20090155989A1 (en) * | 2005-06-06 | 2009-06-18 | Sumitomo Electric Industries, Ltd. | Nitride semiconductor substrate and method of producing same |
| CN101939820A (en) * | 2008-02-15 | 2011-01-05 | 三菱化学株式会社 | Substrate for epitaxial growth, method for manufacturing GaN-based semiconductor film, method for manufacturing GaN-based semiconductor light-emitting element, and GaN-based semiconductor light-emitting element |
| CN102496666A (en) * | 2011-12-14 | 2012-06-13 | 中微光电子(潍坊)有限公司 | Semiconductor device and manufacturing method for gallium nitride epitaxial layer of semiconductor device |
| CN102859650A (en) * | 2010-04-27 | 2013-01-02 | 汉斯·冯凯内尔 | Dislocation and stress management by maskless process utilizing substrate patterning and device fabrication method |
-
2013
- 2013-07-22 CN CN201310306334.7A patent/CN103400913B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10193A (en) * | 1853-11-01 | Machine for turning cylinders of wood | ||
| CN1490844A (en) * | 2002-10-16 | 2004-04-21 | 中国科学院半导体研究所 | Lateral epitaxial growth method of gallium nitride and its compound semiconductor |
| CN1697205A (en) * | 2005-04-15 | 2005-11-16 | 南昌大学 | Method for preparing indium gallium aluminum nitrogen thin film and light-emitting device on silicon substrate |
| CN1953220A (en) * | 2005-04-15 | 2007-04-25 | 南昌大学 | A method for preparing indium-gallium-aluminium-nitrogen film and luminescent device on the silicon substrate |
| US20090155989A1 (en) * | 2005-06-06 | 2009-06-18 | Sumitomo Electric Industries, Ltd. | Nitride semiconductor substrate and method of producing same |
| CN101939820A (en) * | 2008-02-15 | 2011-01-05 | 三菱化学株式会社 | Substrate for epitaxial growth, method for manufacturing GaN-based semiconductor film, method for manufacturing GaN-based semiconductor light-emitting element, and GaN-based semiconductor light-emitting element |
| CN102859650A (en) * | 2010-04-27 | 2013-01-02 | 汉斯·冯凯内尔 | Dislocation and stress management by maskless process utilizing substrate patterning and device fabrication method |
| CN102496666A (en) * | 2011-12-14 | 2012-06-13 | 中微光电子(潍坊)有限公司 | Semiconductor device and manufacturing method for gallium nitride epitaxial layer of semiconductor device |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746051A (en) * | 2013-12-04 | 2014-04-23 | 南昌大学 | Silicon substrate having edge isolation structure |
| CN103824854A (en) * | 2014-02-22 | 2014-05-28 | 石以瑄 | Exchange circuit and microwave integrated circuit which have improved line width evenness and fewer defects in channel and are based on high-electron-mobility transistor |
| CN107123715A (en) * | 2017-04-28 | 2017-09-01 | 海迪科（南通）光电科技有限公司 | A kind of positive tetragonal patterned substrate |
| CN107910244A (en) * | 2017-11-01 | 2018-04-13 | 大连芯冠科技有限公司 | GaN epitaxial growth method using silicon pattern substrate |
| TWI718506B (en) * | 2019-03-25 | 2021-02-11 | 世界先進積體電路股份有限公司 | Semiconducotr structure and method for fabricating the same |
| CN111785609A (en) * | 2019-04-04 | 2020-10-16 | 世界先进积体电路股份有限公司 | Semiconductor structure and method of making the same |
| CN112563120A (en) * | 2020-12-29 | 2021-03-26 | 广西华智芯半导体科技有限公司 | Epitaxial structure of gallium nitride material |
| CN113838952A (en) * | 2021-09-06 | 2021-12-24 | 厦门乾照半导体科技有限公司 | Epitaxial structure, chip and preparation method based on Nano-LED application |
| CN113838952B (en) * | 2021-09-06 | 2023-10-27 | 厦门乾照半导体科技有限公司 | Nano-LED application-based epitaxial structure, chip and preparation method |
| CN114744088A (en) * | 2022-03-11 | 2022-07-12 | 南昌大学 | Graphical deflection angle silicon substrate and preparation method thereof |
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