CN103400835B - The integrated encapsulation method of LED module - Google Patents
The integrated encapsulation method of LED module Download PDFInfo
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- CN103400835B CN103400835B CN201310294702.0A CN201310294702A CN103400835B CN 103400835 B CN103400835 B CN 103400835B CN 201310294702 A CN201310294702 A CN 201310294702A CN 103400835 B CN103400835 B CN 103400835B
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- substrate
- led module
- bowl
- encapsulation method
- control circuit
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000005538 encapsulation Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 120
- 238000004020 luminiscence type Methods 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000000853 adhesive Substances 0.000 claims abstract description 13
- 230000001070 adhesive effect Effects 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 12
- 239000004020 conductor Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000005022 packaging material Substances 0.000 claims description 5
- 238000003854 Surface Print Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000000347 anisotropic wet etching Methods 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 8
- 238000009434 installation Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 8
- 230000010354 integration Effects 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
Landscapes
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of integrated encapsulation method of LED module, comprise the following steps: first substrate and second substrate are provided, luminescence component and control circuit element; Etch some first bowl of cups and through hole on the first substrate, second substrate etches some second bowl of cups; In the etched surface side deposited metal of first and second substrate, and realize graphical; Luminescence component and control circuit element are arranged in the bowl cup of first, second substrate respectively, utilize metal level to realize the circuit interconnects of luminescence component and first substrate, control circuit element and second substrate; Encapsulate after installation; Thermal conductive adhesive is laid, by first substrate and second substrate aligning, bonding at the installed surface of second substrate; Filled conductive material in the through hole of first substrate, by first substrate and second substrate electrical connection.Assembly to be embedded by multiple bare chip integral packaging and three-dimensional etching technique and is encapsulated in substrate by the method, the significantly microminiaturized size of LED module.
Description
Technical field
The present invention relates to the packaging technology field of light-emitting diode, particularly relate to a kind of integrated encapsulation method of LED module.
Background technology
At present, LED illumination module is just towards the future development of multi-functional, small size, low cost, but present integrated technology can not meet the needs of LED illumination.
In prior art, LED technology mainly comprises the connection of 3 parts: LED module, radiator and circuit.
First, LED module, so-called LED module is encapsulated on substrate by one or more LED light source.LED chip is encapsulated in support by modal method for packing exactly, then packaging body is welded in the nead frame on substrate.Also have further by LED integration packaging on substrate, by other circuit or control element, such as voltage stabilizing didoe, optical sensor etc. for light output and junction temperature test, encapsulation on the same substrate, is interconnected by the circuit on pcb board.
And then be radiator, LED module is connected with radiator usually, and the heat produced during LED work can be discharged by fin.
Be finally circuit, circuit is the electrical connection of each functional unit, is generally carrier with substrate.Circuit also has other functions connected outside LED module, and such as control element or sensor element (comprise LED junction temperature sensor, lumen output transducer, CCT transducer have the sensor of special applications with some) are connected with output circuit.
Based on the restriction of prior art due to manufacturing technology and material, microminiaturization has certain difficulty; Arrange that the space of components and parts is very limited; The space of thermal diffusion is very limited; Each assembly independent design, combination difficulty; Each size of components disunity; Each assembly connector position, connection mechanism does not have specification; The larger components and parts of each component application size; Each inter-module, material does not mate; Optical mode group and the superposition of driving module will be connected as one module and can not realize by prior art; Size reduction is very difficult.
Summary of the invention
The technical problem that the present invention mainly solves is to provide that a kind of method is simple, integration density degree is high and effectively can reduces the integrated encapsulation method of the LED module of former package body sizes.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: the integrated encapsulation method providing a kind of LED module, comprises the following steps:
S1: first substrate and second substrate are provided, luminescence component and control circuit element;
S2: etch some first bowl of cups and through hole on the first substrate, second substrate etches some second bowl of cups;
S3: in the etched surface side deposited metal of first substrate and second substrate, and realize graphical;
S4: be arranged on by described luminescence component in first bowl of cup of first substrate respectively and control circuit element is arranged in second bowl of cup of second substrate, utilizes the metal level of deposit to realize the circuit interconnects of the circuit interconnects of luminescence component and through hole and first substrate, control circuit element and second substrate;
S5: the luminescence component control circuit element after installing is encapsulated;
S6: lay thermal conductive adhesive at the installed surface of second substrate, by first substrate and second substrate aligning, bonding;
S7: filled conductive material in the through hole of first substrate, by first substrate and second substrate electrical connection.
Wherein, first substrate described in step S1 and second substrate are silicon substrate.
Wherein, silicon substrate described in two is the silicon chip of [100] crystal structure orientation.
Wherein, the etching described in step S2 is wet anisotropic etching.
Wherein, step S3 realizes the graphical of substrate surface by photoetching and etching.
Wherein, the metal deposition methods described in step S3 is sputtering method.
Wherein, the laying described in step S6 adopts the method for silk screen printing or stencilization, at second substrate upper surface printing thermal conductive adhesive material.
Wherein, described luminescence component comprises LED bare chip and drive circuit bare chip, and LED bare chip, drive circuit bare chip are separately positioned in first bowl of different cups.
Wherein, described drive circuit bare chip and described control circuit element are encapsulated by plastic packaging material, and described LED bare chip is encapsulated by surface-coated fluorescent material.
Wherein, the degree of depth of first, second bowl of cup of described first substrate and second substrate etching is greater than the height of described luminescence component and control circuit element.
The invention has the beneficial effects as follows: be different from prior art processes, each assembly to be embedded by multiple bare chip integral packaging and three-dimensional etching technique and is encapsulated in substrate by the present invention, and the former packaging body area occupied of economization, to reduce the gross area needed for module group substrates.
By through-hole interconnection technology, add and assembly is encapsulated and overlaying structure to embed pattern, effectively increase integration density, thus reduce the size of LED module further.
Reduce the gross area of module group substrates and encapsulate with each Components integration, save encapsulating material and simplify operation, reducing costs.
Because module is microminiaturized, adds without the need to additionally driving module, the heat sink position of light fixture can be vacateed, control module for placement is additional, providing basis for realizing intelligent lighting.
By with thermal conductive adhesive material by module layer bonding, the mechanical strength of overall modular structure can be strengthened, and ensure that the heat that element produces can effectively conduct.
Accompanying drawing explanation
Fig. 1 is the structure cutaway view after first substrate etching;
Fig. 2 is the structure cutaway view after second substrate etching;
Fig. 3 is the structure cutaway view after first substrate deposited metal;
Fig. 4 is the structure cutaway view after second substrate deposited metal;
Fig. 5 is the structure cutaway view after first substrate installs luminescence component;
Fig. 6 is the structure cutaway view after second substrate installs control circuit element;
Fig. 7 is the structure cutaway view after first substrate encapsulation;
Fig. 8 is the structure cutaway view after second substrate encapsulation;
Fig. 9 is the structure cutaway view after second substrate printing thermal conductive adhesive;
Figure 10 structure cutaway view that to be LED module integration packaging be after finished product.
Label declaration:
1, first substrate; 2, second substrate; 3, thermal conductive adhesive; 11, first bowl of cup; 12, through hole; 13, LED bare chip; 14, drive circuit bare chip; 15, electric conducting material; 16, plastic packaging material; 17,22, metal level; 18, fluorescent material; 21, second bowl of cup; 24, control circuit element.
Embodiment
By describing technology contents of the present invention, structural feature in detail, realized object and effect, accompanying drawing is coordinated to be explained in detail below in conjunction with execution mode.
The invention provides a kind of integrated encapsulation method of LED module, the step of the method is as follows:
Step S1, consults Fig. 1 and Fig. 2: provide first substrate 1 and second substrate 2, luminescence component and control circuit element 24 ordinatedly; This first substrate 1 and second substrate 2 are silicon substrate, and this silicon substrate is the silicon chip of [100] crystal structure orientation, understandably, some other be in example, also can be the substrate that material common on some other market makes, specification also can be other.
Step S2, consult Fig. 1 and Fig. 2 ordinatedly: etch some first bowl of cups 11 and through hole 12 on first substrate 1, etch some second bowl of cups 21 on second substrate 2, this lithographic method is utilize the anisotropy of silicon to carry out wet etching, etch two first bowl of cups 11 on first substrate 1, two through holes 12 are etched with respectively in the outside of first bowl of cup 11, etch two second bowl of cups 21 on second substrate 2, this first substrate 1 and second substrate 2 etch first, second bowl of cup 11, the degree of depth of 21 is greater than the height of luminescence component and control circuit element 24, this luminescence component comprises LED bare chip 13 and drive circuit bare chip 14, wherein LED bare chip 13 and drive circuit bare chip 14 are arranged in first bowl of different cup 11 of first substrate 1 respectively.
Step S3, consults Fig. 3 and Fig. 4: ordinatedly in the etched surface side deposited metal 17,22 of first substrate 1 and second substrate 2, and realizes graphical; In the present embodiment, surface deposition metal level 17,22, adopts photoetching and etching to realize graphical; Metal can use aluminium, and deposition process can use sputtering method, certainly, some other be in embodiment, also can adopt other metal materials, such as silver, copper etc.
Step S4, consult Fig. 5 and Fig. 6 ordinatedly: be arranged on by described luminescence component in first bowl of cup 11 of first substrate 1 respectively and control circuit element 24 is arranged in second bowl of cup 21 of second substrate, utilize the metal level 17 of deposit to realize the circuit interconnects of the circuit interconnects of luminescence component and through hole 12 and first substrate 1, control circuit element 24 and second substrate 2.
Step S5, consults Fig. 7 and Fig. 8: encapsulate the luminescence component control circuit element 24 after installing ordinatedly.Wherein drive circuit bare chip 14 and control circuit element 24 are encapsulated by plastic packaging material 16, and described LED bare chip 13 is encapsulated by surface-coated fluorescent material 18.In the present embodiment, this plastic packaging material 16 is epoxy encapsulant, intelligible, some other be in example, also can be other capsulation material.
Step S6, consults Fig. 9: lay thermal conductive adhesive 3 at the installed surface of second substrate 2, first substrate 1 and second substrate 2 to be aimed at, bonding ordinatedly; Wherein, laying the method adopted is method for printing screen, at this second substrate 2 upper surface printing thermal conductive adhesive 3 material.This thermal conductive adhesive 3 print time and not all the etched surface side of second substrate 2 is covered, it also leaves corresponding unlapped room, and empty place exposes metal level 22, and the position of this metal level 22 is just in time corresponding with the position of the through hole 12 of first substrate 1.
Step S7, consults Figure 10 ordinatedly: filled conductive material 15 in the through hole 12 of first substrate 1, first substrate 1 and second substrate 2 is electrically connected; Electric conducting material 15 is injected in two through hole 12, the bottom of electric conducting material 15 touches the metal level 22 of second substrate 2, and the metal level 17 of Electricity Federation, electric conducting material 15 top first substrate 1, therefore, the metal level 17 of LED bare chip 13, drive circuit bare chip 14, first substrate, electric conducting material 15, second substrate metal level 22 and control circuit element 24 form loop.In the present embodiment, this electric conducting material can be the material that tin, aluminium, copper or conductive adhesive etc. have excellent conductive performance.
In addition, utilize following method also can the multiple unit as shown in Figure 10 of disposable making, be specially: first substrate 1 and second substrate 2 (silicon chip) can arrange some identical construction units as shown in Figures 1 and 2 respectively, make according to above-mentioned steps, cut again after completing, several encapsulation module can be obtained, adopt the method to enhance productivity.
In sum, adopt this kind of method packaged LED module to have the following advantages: to be embedded by assembly by multiple bare chip integral packaging and three-dimensional etching technique and be encapsulated in substrate, the former packaging body area occupied of economization, to reduce the gross area needed for module group substrates.
By through-hole interconnection technology, add and assembly is encapsulated and overlaying structure to embed pattern, effectively increase integration density, thus reduce the size of LED module further.
Reduce the gross area of module group substrates and encapsulate with each Components integration, encapsulating material can be save and simplify operation, reducing costs.
Microminiaturized by what module, adding without the need to additionally driving module, the heat sink position of light fixture can be vacateed, control module for placement is additional, providing basis for realizing intelligent lighting.
By with thermal conductive adhesive material by module layer bonding, the mechanical strength of overall modular structure can be strengthened, and ensure that the heat that element produces can effectively conduct.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every utilize specification of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (10)
1. an integrated encapsulation method for LED module, is characterized in that, comprises the following steps:
S1: first substrate and second substrate are provided, luminescence component and control circuit element;
S2: etch some first bowl of cups and through hole on the first substrate, second substrate etches some second bowl of cups;
S3: in the etched surface side deposited metal of first substrate and second substrate, and realize graphical;
S4: be arranged on by described luminescence component in first bowl of cup of first substrate respectively and control circuit element is arranged in second bowl of cup of second substrate, utilizes the metal level of deposit to realize the circuit interconnects of the circuit interconnects of luminescence component and through hole and first substrate, control circuit element and second substrate;
S5: the luminescence component control circuit element after installing is encapsulated;
S6: lay thermal conductive adhesive at the installed surface of second substrate, by first substrate and second substrate aligning, bonding;
S7: filled conductive material in the through hole of first substrate, by first substrate and second substrate electrical connection.
2. the integrated encapsulation method of LED module according to claim 1, is characterized in that: first substrate described in step S1 and second substrate are silicon substrate.
3. the integrated encapsulation method of LED module according to claim 2, is characterized in that: silicon substrate described in two is the silicon chip of [100] crystal structure orientation.
4. the integrated encapsulation method of LED module according to claim 1, is characterized in that: the etching described in step S2 is wet anisotropic etching.
5. the integrated encapsulation method of LED module according to claim 1, is characterized in that: step S3 realizes the graphical of substrate surface by photoetching and etching.
6. the integrated encapsulation method of LED module according to claim 1, is characterized in that: the metal deposition methods described in step S3 is sputtering method.
7. the integrated encapsulation method of LED module according to claim 1, is characterized in that: the laying described in step S6 adopts the method for silk screen printing or stencilization, at second substrate upper surface printing thermal conductive adhesive material.
8. the integrated encapsulation method of LED module according to claim 1, is characterized in that: described luminescence component comprises LED bare chip and drive circuit bare chip, and LED bare chip, drive circuit bare chip are separately positioned in first bowl of different cups.
9. the integrated encapsulation method of LED module according to claim 8, is characterized in that: described drive circuit bare chip and described control circuit element are encapsulated by plastic packaging material, and described LED bare chip is encapsulated by surface-coated fluorescent material.
10. the integrated encapsulation method of the LED module according to any one of claim 1-9, is characterized in that: the degree of depth of first, second bowl of cup of described first substrate and second substrate etching is greater than the height of described luminescence component and control circuit element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201310294702.0A CN103400835B (en) | 2013-07-12 | 2013-07-12 | The integrated encapsulation method of LED module |
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| CN201310294702.0A CN103400835B (en) | 2013-07-12 | 2013-07-12 | The integrated encapsulation method of LED module |
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| CN103400835A CN103400835A (en) | 2013-11-20 |
| CN103400835B true CN103400835B (en) | 2016-01-20 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103646620B (en) * | 2013-12-25 | 2016-01-20 | 深圳市洲明科技股份有限公司 | LED shows module and manufacture method thereof |
| CN103985318B (en) * | 2014-04-16 | 2016-01-20 | 长春希达电子技术有限公司 | The method for making of a kind of integrated LED 3-D display module and display screen |
| CN105788469B (en) * | 2014-12-24 | 2018-08-24 | 环视先进数字显示无锡有限公司 | Monochromatic LED composite panel display module manufacturing method |
| CN111081730B (en) * | 2019-12-13 | 2022-12-27 | 深圳第三代半导体研究院 | Micro-LED chip and manufacturing method thereof |
| CN115547206B (en) * | 2022-09-29 | 2024-07-09 | 上海天马微电子有限公司 | Light-emitting module, manufacturing method thereof, backlight source, display panel and display device |
| CN119153613A (en) * | 2024-11-20 | 2024-12-17 | 苏州科阳半导体有限公司 | LED packaging structure and LED packaging method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102844898A (en) * | 2010-04-15 | 2012-12-26 | 株式会社理技独设计系统 | Three-dimensional led substrate and led lighting device |
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| JP4951018B2 (en) * | 2009-03-30 | 2012-06-13 | 株式会社東芝 | Manufacturing method of semiconductor device |
| KR101224702B1 (en) * | 2011-07-25 | 2013-01-21 | 삼성전기주식회사 | Power device pakage module and manufacturing method thereof |
| KR101831692B1 (en) * | 2011-08-17 | 2018-02-26 | 삼성전자주식회사 | Semiconductor Devices, Package Substrates, Semiconductor Packages, Package Stack Structures, and Electronic Systems having Functionally Asymmetric Conductive elements |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102844898A (en) * | 2010-04-15 | 2012-12-26 | 株式会社理技独设计系统 | Three-dimensional led substrate and led lighting device |
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