CN103390784A - Miniaturized substrate integration waveguide duplexer - Google Patents

Abstract

The invention discloses a miniaturized substrate integrated waveguide duplexer, which comprises a first metal copper-clad layer, a first dielectric layer, a second metal copper-clad layer, a second dielectric layer, a third The metal copper-clad layer, the third dielectric layer, and the fourth metal-clad copper layer are surrounded by metallized through-hole arrays to form a dual-mode resonant cavity and a triangular resonant cavity. The dual-mode resonant cavity and the triangular resonant cavity are connected through coupling slots. They are connected through coupling windows, and the input and output use a microstrip line structure. The invention can be used in a microwave and millimeter wave communication system, and has the advantages of being suitable for miniaturization of the system, light in weight, low in cost, easy to integrate and fast in processing cycle.

Description

A Miniaturized Substrate Integrated Waveguide Duplexer

technical field

The invention belongs to the technical field of microwave and millimeter wave passive devices, in particular to a substrate integrated waveguide duplexer in microwave and millimeter wave passive devices.

Background technique

With the rapid development of modern communication systems, the functions of microwave and millimeter wave circuits are becoming more and more complex, and the electrical performance requirements are getting higher and higher. At the same time, they are also developing in the direction of miniaturization, light weight, and low cost. This development trend is formed to meet the commercial requirements of microwave and millimeter wave circuits. The substrate integrated waveguide is a kind of transmission line structure with low loss, high power capacity, low cost and easy integration under this situation. Using this technology, high-performance filters, antennas, duplex Microwave and millimeter wave devices such as devices.

A duplexer is usually used to realize the sharing of an antenna for transmission and reception, so as to achieve the purpose of reducing cost and system volume. In the traditional design, a duplexer is usually composed of two filters connected by a T-junction for impedance matching, one of which works in the transmitting frequency band, and the other works in the receiving frequency band. A reasonable T-junction should meet the impedance matching requirements and isolation requirements between ports at the same time. However, the T-junction usually takes up a lot of space, which is not conducive to the miniaturization of the duplexer. On the other hand, traditional duplexers working in the high-frequency band are mostly composed of machined metal cavities, so the processing costs are high, the cycle is long, the volume is large, the weight is heavy, and it is difficult to integrate. Traditional duplexers have many shortcomings and need to be improved urgently.

Contents of the invention

The object of the present invention is to propose a miniaturized substrate integrated waveguide duplexer, which overcomes the shortcomings of existing duplexers such as large volume, high processing cost and difficulty in integration.

The technical solution of the present invention is: a miniaturized substrate-integrated waveguide duplexer, including a first metal copper-clad layer, a first dielectric layer, a second metal copper-clad layer, and a second dielectric layer sequentially stacked from top to bottom , the third metal copper clad layer, the third dielectric layer, and the fourth metal copper clad layer; The same triangular resonant cavity 1 and triangular resonant cavity 2, these two triangular resonant cavities are isosceles right triangles; the metallized through hole array and the two perturbed metallized through holes penetrate the second metal copper clad layer , the second dielectric layer, and the third metal-clad copper layer form a square dual-mode resonant cavity, and two metallized through holes for perturbation are located on the diagonal of the square; the metallized through hole array runs through the first The three metal clad copper layers, the third dielectric layer, and the fourth metal clad copper layer form a triangular resonant cavity three and a triangular resonant cavity four of the same size. These two triangular resonant cavities are isosceles right triangles; The microstrip line, the coupling grooves on both sides of the microstrip line, and the window formed by the interruption of the metallized through-hole array below the microstrip line together constitute the input port of the duplexer. One end of the input port is connected to the square dual-mode resonant cavity; The microstrip line on the first metal layer, the coupling grooves on both sides of the microstrip line, and the window formed by the interruption of the metallized through-hole array below the microstrip line together constitute an output port of the duplexer, and one end of the port is connected to the triangular resonant cavity One connection; the microstrip line located on the fourth metal layer, the coupling groove on both sides of the microstrip line, and the window formed by the interruption of the metallized through-hole array below the microstrip line together constitute another output port of the duplexer. One end is connected with the triangular resonator three.

Further, the triangular resonator one is adjacent to the hypotenuse of the triangular resonator two, and the metallized through holes in their junction area are interrupted to form a coupling window; The vias are interrupted to form coupling windows.

Further, the square dual-mode resonant cavity is connected to the second triangular resonant cavity through the rectangular coupling slot on the second metal copper clad layer, and connected to the triangular resonant cavity four through the rectangular coupling slot on the third metal copper clad layer. The directions along the long sides of the coupling slots are respectively parallel to the two diagonals of the square double-mode resonant cavity.

Advantages and beneficial effects of the present invention:

(1) Compared with the traditional duplexer, the present invention has the advantage of compact structure. On the one hand, by replacing the T-junction with a common resonant unit, the common resonant unit can not only provide resonance, but also eliminate the area occupied by the T-junction, reducing the size of the circuit. On the other hand, using a stacked structure to overlap the resonant units, compared with using a planar structure, the size is reduced a lot;

(2) The duplexer of the present invention is produced and processed by printed circuit board technology, while the traditional duplexer is machined, so the duplexer of the present invention is lower in cost, lighter in weight, and has a faster processing cycle , easy to integrate;

Description of drawings

Fig. 1 is the overall structure development schematic diagram of the present invention

Fig. 2 is a schematic top view of the overall structure of the present invention

Detailed ways

The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments: As shown in Figure 1, the miniaturized substrate integrated waveguide duplexer is characterized in that it includes a first metal copper clad layer 1, which is stacked sequentially from top to bottom, The first dielectric layer 2, the second metal copper clad layer 3, the second dielectric layer 4, the third metal copper clad layer 5, the third dielectric layer 6, the fourth metal copper clad layer 7; the metallized through hole array 81 Through the first metal copper clad layer 1, the first dielectric layer 2, and the second metal copper clad layer 3, a triangular resonant cavity 1 22 and a triangular resonant cavity 2 24 with the same size are formed. These two triangular resonant cavities are isosceles right angles Triangular; the metallized through-hole array 82 and the two perturbed metallized through-holes 42 penetrate the second metal copper-clad layer 3, the second dielectric layer 4, and the third metal-clad copper layer 5 to form a square The double-mode resonant cavity 41, two perturbed metallized through holes 42 are located on the diagonal of the square; the metallized through hole array 83 runs through the third metal copper clad layer 5, the third dielectric layer 6, the second The four-metal copper-clad layer 7 forms a triangular resonant cavity three 62 and a triangular resonant cavity four 64 of the same size. These two triangular resonant cavities are isosceles right triangles; The coupling groove 52 on the side and the window 43 formed by the interruption of the metallized through-hole array below the microstrip line jointly constitute the input port of the duplexer, and one end of the input port is connected to the square dual-mode resonant cavity 41; The microstrip line 11, the coupling grooves 12 on both sides of the microstrip line, and the window 21 formed by the interruption of the metallized through-hole array below the microstrip line jointly constitute an output port of the duplexer, and one end of the port is connected to a triangular resonant cavity 22 The microstrip line 71 on the fourth metal layer, the coupling groove 72 on both sides of the microstrip line, and the window 61 formed by the interruption of the metallized through-hole array below the microstrip line jointly constitute another output port of the duplexer. One end of the port is connected with the triangular resonant cavity three 62 .

Further, the triangular resonant cavity 1 22 is adjacent to the hypotenuse of the triangular resonant cavity 2 24, and the metallized through holes in their junction areas are interrupted to form a coupling window 23; the triangular resonant cavity 3 62 is adjacent to the hypotenuse of the triangular resonant cavity 4 64, The metallized vias in their border areas are interrupted to form coupling windows 63 .

Further, the square dual-mode resonator 41 is connected to the triangular resonator 2 24 through the rectangular coupling slit 31 on the second metal copper clad layer 3, and connected to the triangular resonator 4 through the rectangular coupling slit 53 on the third metal copper clad layer 5. 64, and the two rectangular coupling slits are parallel to the two diagonals of the square dual-mode resonator 41 along the long sides.

The principle of the technical solution of the present invention is: the square dual-mode resonant cavity 41 can resonate at two frequencies, and when the perturbation via hole 42 moves on the diagonal of the dual-mode resonant cavity 41, the frequency of the dual-mode resonant cavity 41 can be changed. One resonant frequency, the other resonant frequency is unchanged. The signal entering the dual-mode resonant cavity 41 from the microstrip line 51 will resonate at the two passband center frequencies of the duplexer, one of which is the same as the resonant frequency of the triangular resonant cavity 22 and 24, and the other resonant frequency The resonant frequencies of the triangular resonators 62 and 64 are the same. Thus, a signal from the square dual-mode resonant cavity 41 enters the triangular resonant cavity 2 24 through the coupling slot 31 , then enters the triangular resonant cavity 1 22 through the coupling window 23 , and finally is output by the microstrip line 11 . The other signal enters the triangular resonant cavity 4 64 from the square dual-mode resonant cavity 41 through the coupling slot 53 , and then enters the triangular resonant cavity 3 62 through the coupling window 63 , and is finally output by the microstrip line 71 . By controlling the size of the coupling slit 31 and the coupling window 23 , the bandwidth of one signal passband can be controlled, while controlling the size of the coupling slit 53 and the coupling window 63 can control the bandwidth of the other signal passband. The size of the coupling slots 52, 12, 72 can control the input and output quality factors of the filter.

In order to further illustrate the practicability of the above-mentioned technical solution, a specific design example is given below, a miniaturized substrate integrated waveguide duplexer, the designed low-frequency channel works at 8GHz, and the high-frequency channel works at 9GHz. The bandwidth of the two channels is equal to 0.33GHz. The dielectric substrate is an F4B substrate with a thickness of 0.8 mm and a dielectric constant of 2.55. The diameter of the selected metallized vias is 0.8mm. In Figure 2, port A is the input port, and port B and port C are two output ports. The geometric parameters of the corresponding duplexer are as follows: a ₁ = 27.64 mm, a ₂ = 24.5 mm, w= 2.3 mm, w ₁ = 6.03 mm, w ₂ = 5.73 mm, l ₁ = 4.5 mm, l ₂ = 4.7 mm, l ₃ = 3.5 mm, t = 5.85 mm, p ₁ = 1.02 mm, p ₂ = 1 mm, p ₃ = 1.1 mm, p ₄ = 1.11 mm, s ₁ = 1.5 mm, s ₂ = 1 mm, s ₃ = 1.5 mm, s 4 = 4.45 mm, s ₅ = 1 mm, s ₆ = 4.4 mm, s ₇ = _1.06 mm, _d1 = 2.33 mm, _d2 = 1.34 mm. The test results show that the center frequencies of the two channel filters of the duplexer are 8.02GHz and 9.08GHz respectively, the corresponding bandwidths are 0.293GHz and 0.326GHz, and the insertion losses at the center frequencies are 2.86dB and 3.04dB respectively. From 7GHz to 10GHz, its isolation is greater than 40dB.

Those skilled in the art will appreciate that the embodiments described here are to help readers understand the principles of the present invention, and it should be understood that the protection scope of the present invention is not limited to such specific statements and embodiments. Those skilled in the art can make various other specific modifications and combinations based on the technical revelations disclosed in the present invention without departing from the present invention, and these modifications and combinations are still within the protection scope of the present invention.

Claims (3)

1. miniaturized substrate integrated waveguide duplexer, it is characterized in that, the first metal that stacks gradually from the top down covers copper layer (1), first medium layer (2), the second metal and covers copper layer (3), second medium layer (4), the 3rd metal and cover copper layer (5), the 3rd dielectric layer (6), the 4th metal and cover copper layer (7); Described plated-through hole array (81) has run through the first metal and has covered copper layer (1), first medium layer (2), the second metal and cover copper layer (3) and formed big or small identical triangle resonant cavity one (22) and triangle resonant cavity two (24), and these two triangle resonant cavitys are isosceles right triangle; The plated-through hole (42) that described plated-through hole array (82) and two carry out perturbation has run through the second metal and has covered copper layer (3), second medium layer (4), the 3rd metal and cover copper layer (5) and formed a foursquare bimodulus resonant cavity (41), and two plated-through holes (42) that carry out perturbation are positioned on foursquare diagonal; Described plated-through hole array (83) has run through the 3rd metal and has covered copper layer (5), the 3rd dielectric layer (6), the 4th metal and cover copper layer (7) and formed big or small identical triangle resonant cavity three (62) and triangle resonant cavity four (64), and these two triangle resonant cavitys are isosceles right triangle; The microstrip line (51), the coupling slot (52) of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the 3rd metal level interrupt the window (43) that forms, the common input port that forms duplexer, an end of input port is connected with square bimodulus resonant cavity (41); The microstrip line (11), the coupling slot (12) of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the first metal layer interrupt the window (21) that forms, output port of common formation duplexer, an end of this port is connected with triangle resonant cavity one (22); The microstrip line (71), the coupling slot (72) of microstrip line both sides, the plated-through hole array below microstrip line that are positioned at the 4th metal level interrupt the window (61) that forms, common another output port of formation duplexer, an end of this port is connected with triangle resonant cavity three (62).

2. miniaturized substrate integrated waveguide duplexer according to claim 1, is characterized in that, triangle resonant cavity one (22) is adjacent with triangle resonant cavity two (24) hypotenuses, and the plated-through hole of their juncture areas interrupts, and forms coupling window (23); Triangle resonant cavity three (62) is adjacent with triangle resonant cavity four (64) hypotenuses, and the plated-through hole of their juncture areas interrupts, and forms coupling window (63).

3. miniaturized substrate integrated waveguide duplexer according to claim 1, it is characterized in that, square bimodulus resonant cavity (41) is connected with triangle resonant cavity two (24) by the rectangle coupling slot (31) that the second metal covers on copper layer (3), the rectangle coupling slot (53) of covering on copper layer (5) by the 3rd metal is connected with triangle resonant cavity four (64), and these two rectangle coupling slots are parallel with two diagonal of square bimodulus resonant cavity (41) respectively along the direction on long limit.

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