CN103390715B - A kind of LED of AlSiC composite base plate encapsulation - Google Patents
A kind of LED of AlSiC composite base plate encapsulation Download PDFInfo
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Abstract
本发明公开了一种用AlSiC复合基板封装的LED,包括表面依次镀有铜膜和银膜的AlSiC复合散热基板、LED光源模块、金线和氧化铝陶瓷边框;所述LED光源模块封装在AlSiC复合散热基板上;所述氧化铝陶瓷边框设于LED光源模块外侧,与LED光源模块粘接;所述氧化铝陶瓷边框上镀有两个铜膜电极,两个铜膜电极分别通过金线与LED光源模块的正、负极连接。本发明的LED,AlSiC复合基板与LED芯片材料热膨胀系数相匹配,板上封装的LED芯片不易脱落,提高了LED的使用寿命。
The invention discloses an LED packaged with an AlSiC composite substrate, comprising an AlSiC composite heat dissipation substrate whose surface is sequentially plated with a copper film and a silver film, an LED light source module, a gold wire and an alumina ceramic frame; the LED light source module is packaged in an AlSiC on the composite heat dissipation substrate; the alumina ceramic frame is arranged on the outside of the LED light source module and bonded to the LED light source module; the alumina ceramic frame is plated with two copper film electrodes, and the two copper film electrodes are connected to each other through gold wires and The positive and negative poles of the LED light source module are connected. The thermal expansion coefficient of the LED and the AlSiC composite substrate of the invention matches that of the LED chip material, and the LED chip packaged on the board is not easy to fall off, thereby improving the service life of the LED.
Description
技术领域technical field
本发明涉及板上封装的LED,特别涉及一种用AlSiC复合基板封装的LED。The invention relates to an LED packaged on a board, in particular to an LED packaged with an AlSiC composite substrate.
背景技术Background technique
随着微电子器件向高性能、轻量化和小型化方向发展,微电子对封装材料提出越来越苛刻的要求。传统的封装材料包括硅基板,金属基板和陶瓷基板等。硅和陶瓷基板加工困难,成本高,热导率低;金属材料的热膨胀系数与微电子芯片不匹配,在使用过程中将产生热应力而翘曲。因此,这些传统的封装材料很难满足封装基板的苛刻需求。对于大功率LED来说,这尤为重要。With the development of microelectronic devices in the direction of high performance, light weight and miniaturization, microelectronics puts forward more and more stringent requirements for packaging materials. Traditional packaging materials include silicon substrates, metal substrates, and ceramic substrates. Silicon and ceramic substrates are difficult to process, high in cost, and low in thermal conductivity; the thermal expansion coefficient of metal materials does not match that of microelectronic chips, which will cause thermal stress and warp during use. Therefore, it is difficult for these traditional packaging materials to meet the demanding requirements of packaging substrates. This is especially important for high power LEDs.
国内外新研发的散热基板材料有金属芯印刷电路板(MCPCB)、覆铜陶瓷板(DBC)和金属基低温烧结陶瓷基板(LTCC-M)。其中,金属芯印刷电路板热导率受到绝缘层的限制,热导率低,且不能实现板上封装;覆铜陶瓷板采用直接键合方式将陶瓷和金属键合在一起,提高了热导率,同时使得热膨胀系数控制在一个合适的范围,但金属和陶瓷的反应能力低,润湿性不好,使得键合难度高,界面结合强度低,易脱落;金属基低温烧结陶瓷基板对成型尺寸精度要求高,工艺复杂,也同样存在金属和陶瓷润湿性不好、易脱落的难题。Newly developed heat dissipation substrate materials at home and abroad include metal core printed circuit board (MCPCB), copper-clad ceramic board (DBC) and metal-based low-temperature sintered ceramic substrate (LTCC-M). Among them, the thermal conductivity of the metal core printed circuit board is limited by the insulating layer, the thermal conductivity is low, and on-board packaging cannot be realized; the copper-clad ceramic board adopts a direct bonding method to bond ceramics and metals together, which improves the thermal conductivity. At the same time, the thermal expansion coefficient is controlled in an appropriate range, but the reaction ability of metal and ceramics is low, and the wettability is not good, which makes the bonding difficult, the interface bonding strength is low, and it is easy to fall off; The requirements for dimensional accuracy are high and the process is complicated. There are also problems of poor wettability and easy falling off of metal and ceramics.
发明内容Contents of the invention
为了克服现有技术的上述缺点与不足,本发明的目的在于提供一种用AlSiC复合基板封装的LED,AlSiC复合基板与LED芯片材料热膨胀系数相匹配,板上封装的LED芯片不易脱落,提高了LED的使用寿命。In order to overcome the above-mentioned shortcomings and deficiencies of the prior art, the object of the present invention is to provide an LED packaged with an AlSiC composite substrate, the AlSiC composite substrate matches the thermal expansion coefficient of the LED chip material, and the LED chip packaged on the board is not easy to fall off, improving LED lifespan.
本发明的目的通过以下技术方案实现:The object of the present invention is achieved through the following technical solutions:
一种用AlSiC复合基板封装的LED,包括表面依次镀有铜膜和银膜的AlSiC复合散热基板、LED光源模块、金线和氧化铝陶瓷边框;所述LED光源模块封装在AlSiC复合散热基板上;所述氧化铝陶瓷边框设于LED光源模块外侧,与LED光源模块粘接;所述氧化铝陶瓷边框上镀有两个铜膜电极,两个铜膜电极分别通过金线与LED光源模块的正、负极连接。An LED packaged with an AlSiC composite substrate, comprising an AlSiC composite heat dissipation substrate whose surface is sequentially plated with a copper film and a silver film, an LED light source module, a gold wire, and an alumina ceramic frame; the LED light source module is packaged on the AlSiC composite heat dissipation substrate The alumina ceramic frame is arranged on the outside of the LED light source module, and is bonded to the LED light source module; two copper film electrodes are plated on the alumina ceramic frame, and the two copper film electrodes pass through the gold wire and the LED light source module respectively. Positive and negative connections.
所述铜膜包括第一层铜膜和第二层铜膜,所述第一层铜膜采用化学镀的方法在AlSiC复合散热基板的表面制备,所述第二层铜膜采用电镀的方法在第一层铜膜的表面制备。The copper film includes a first layer of copper film and a second layer of copper film. The first layer of copper film is prepared on the surface of the AlSiC composite heat dissipation substrate by electroless plating, and the second layer of copper film is prepared on the surface of the AlSiC composite heat dissipation substrate by electroplating. Surface preparation of the first copper film.
所述第一层铜膜的厚度为0.8-1μm。The thickness of the first layer of copper film is 0.8-1 μm.
所述第二层铜膜的厚度为10-20μm。The thickness of the second layer of copper film is 10-20 μm.
所述银膜采用无氰电镀的方法制备。The silver film is prepared by cyanide-free electroplating.
所述LED光源模块采用COB(chip on board,简称COB)封装工艺封装在AlSiC复合散热基板上。The LED light source module is packaged on an AlSiC composite heat dissipation substrate by adopting a COB (chip on board, COB for short) packaging process.
与现有技术相比,本发明具有以下优点和有益效果:Compared with the prior art, the present invention has the following advantages and beneficial effects:
(1)本发明采用AlSiC复合散热基板,AlSiC复合材料原材料价格便宜,能近净成形复杂形状,且具有热导率高、膨胀系数可调、比刚度大、密度小,本发明的LED结构简单、散热性能好,所述的复合基板与LED芯片材料热膨胀系数相匹配,使板上封装的LED芯片不易脱落,提高了LED的使用寿命,且具有功率密度高、可靠性高和质量轻等优点。(1) The present invention adopts AlSiC composite heat dissipation substrate. AlSiC composite materials are cheap in raw materials, can form complex shapes near net, and have high thermal conductivity, adjustable expansion coefficient, high specific stiffness, and low density. The LED structure of the present invention is simple , Good heat dissipation performance, the composite substrate and the thermal expansion coefficient of the LED chip material match, so that the LED chip packaged on the board is not easy to fall off, the service life of the LED is improved, and it has the advantages of high power density, high reliability and light weight. .
(2)本发明的AlSiC复合散热基板上依次镀有第一层铜膜、第二层铜膜和银膜,镀膜银后能提高基板反射率,提高LED光源模块的出光效率,适用于高效大功率LED的制造。(2) The AlSiC composite heat dissipation substrate of the present invention is sequentially coated with a first layer of copper film, a second layer of copper film and a silver film. After silver coating, the reflectivity of the substrate can be improved, and the light extraction efficiency of the LED light source module can be improved. It is suitable for high-efficiency large Manufacture of power LEDs.
(3)本发明采用氧化铝陶瓷边框封装,用陶瓷边框作为绝缘层。AlSiC是半导体材料,具有一定的导电性,直接在AlSiC基板上做铜膜电极可能会导致短路现象的发生。因此,在AlSiC基板上,LED芯片周边粘贴上一个陶瓷边框,并在陶瓷上做电极等线路,可以防止短路现象的出现,同时陶瓷边框成本低,容易安装,适合大规模生产。(3) The present invention uses an alumina ceramic frame package, and uses the ceramic frame as an insulating layer. AlSiC is a semiconductor material with a certain degree of conductivity. Directly making copper film electrodes on AlSiC substrates may cause short circuits. Therefore, on the AlSiC substrate, paste a ceramic frame around the LED chip, and make electrodes and other circuits on the ceramic, which can prevent the occurrence of short circuits. At the same time, the ceramic frame is low in cost, easy to install, and suitable for mass production.
附图说明Description of drawings
图1为本发明的实施例1的用AlSiC复合基板封装的LED剖面图。FIG. 1 is a cross-sectional view of an LED packaged with an AlSiC composite substrate according to Embodiment 1 of the present invention.
图2为本发明的实施例1的用AlSiC复合基板封装的LED俯视图。FIG. 2 is a top view of an LED packaged with an AlSiC composite substrate according to Embodiment 1 of the present invention.
具体实施方式detailed description
下面结合实施例及附图,对本发明作进一步地详细说明,但本发明的实施方式不限于此。The present invention will be described in further detail below in conjunction with the embodiments and the accompanying drawings, but the embodiments of the present invention are not limited thereto.
实施例Example
如图1~2所示,本实施例的一种用AlSiC复合基板封装的LED,包括表面依次镀有铜膜2和银膜3的AlSiC复合散热基板1、LED光源模块4、金线6和氧化铝陶瓷边框8;所述LED光源模块4采用COB封装工艺封装在AlSiC复合散热基板1上;所述氧化铝陶瓷边框8设于LED光源模块4外侧,与LED光源模块4粘接;所述氧化铝陶瓷边框8上镀有两个铜膜电极7,两个铜膜电极7分别通过金线6与LED光源模块4的正、负极连接,透明硅胶5包裹金线6、铜膜电极7与金线6连接的部分。As shown in Figures 1 and 2, an LED packaged with an AlSiC composite substrate in this embodiment includes an AlSiC composite heat dissipation substrate 1 coated with a copper film 2 and a silver film 3 on the surface in sequence, an LED light source module 4, a gold wire 6 and An alumina ceramic frame 8; the LED light source module 4 is packaged on the AlSiC composite heat dissipation substrate 1 using a COB packaging process; the alumina ceramic frame 8 is arranged outside the LED light source module 4 and bonded to the LED light source module 4; Two copper film electrodes 7 are plated on the alumina ceramic frame 8, and the two copper film electrodes 7 are respectively connected to the positive and negative poles of the LED light source module 4 through gold wires 6, and the transparent silica gel 5 wraps the gold wire 6, the copper film electrodes 7 and the Gold wire 6 connected parts.
所述铜膜包括第一层铜膜和第二层铜膜,所述第一层铜膜采用化学镀的方法在AlSiC复合散热基板的表面制备,厚度为0.8μm;所述第二层铜膜采用电镀的方法在第一层铜膜的表面制备,厚度为10μm。The copper film includes a first layer of copper film and a second layer of copper film. The first layer of copper film is prepared on the surface of the AlSiC composite heat dissipation substrate by electroless plating, with a thickness of 0.8 μm; the second layer of copper film It is prepared on the surface of the first layer of copper film by electroplating, with a thickness of 10 μm.
所述LED光源模块4的尺寸可以为30mm*30mm、40mm*40mm或50mm*50mm,分别对应的是功率为20W-40W、40W-60W、60W-100W的LED光源模块。The size of the LED light source module 4 can be 30mm*30mm, 40mm*40mm or 50mm*50mm, corresponding to LED light source modules with powers of 20W-40W, 40W-60W, 60W-100W respectively.
本实施例的用AlSiC复合基板封装的LED的制备过程如下:The preparation process of the LED packaged with the AlSiC composite substrate in this embodiment is as follows:
(1)将未经抛光清洗的AlSiC复合基板抛光至镜面。抛光后,分别用丙酮和无水乙醇浸泡所述的AlSiC复合基板,并将其放入超声波清洗仪中清洗15分钟,以清除基板上附着的油脂等杂物。(1) Polish the unpolished AlSiC composite substrate to a mirror surface. After polishing, soak the AlSiC composite substrate with acetone and absolute ethanol respectively, and put it into an ultrasonic cleaner for cleaning for 15 minutes, so as to remove grease and other sundries attached to the substrate.
(2)对AlSiC复合基板进行金属化处理:在AlSiC复合基板的表面上用化学镀的方法镀第一层铜膜,厚度为0.8μm。镀第一层铜膜的目的是为了使AlSiC复合基板导电,为后面电镀作准备。所述第一层铜膜的尺寸与LED光源模块尺寸相一致。(2) Metallize the AlSiC composite substrate: the first layer of copper film is plated on the surface of the AlSiC composite substrate by electroless plating, with a thickness of 0.8 μm. The purpose of plating the first layer of copper film is to make the AlSiC composite substrate conductive and prepare for subsequent electroplating. The size of the first layer of copper film is consistent with the size of the LED light source module.
(3)在第一层铜膜的表面上用电镀的方法镀第二层铜膜,第二层铜膜的位置以及大小与第一层铜膜相一致,厚度为10μm。(3) Electroplating is used to plate a second layer of copper film on the surface of the first layer of copper film. The position and size of the second layer of copper film are consistent with those of the first layer of copper film, and the thickness is 10 μm.
(4)在第二层铜膜的表面用无氰电镀的方法镀上银膜,在室温下,电镀30分钟,银膜的位置与大小与第二层铜膜相一致。(4) Plating a silver film on the surface of the second layer of copper film by cyanide-free electroplating, electroplating for 30 minutes at room temperature, the position and size of the silver film are consistent with the second layer of copper film.
(5)在AlSiC复合基板镀银膜的处理后,按照传统的板上封装方法,将LED光源模块封装在所述银膜上。在LED光源模块外侧粘接一块氧化铝边框;所述氧化铝边框上镀有两个铜膜电极。利用金线将两个铜膜电极分别连接LED光源模块的正负极。最后用透明硅胶包裹金线、铜膜电极与金线连接的部分。(5) After the silver-plated film on the AlSiC composite substrate is processed, the LED light source module is packaged on the silver film according to the traditional on-board packaging method. An aluminum oxide frame is glued on the outside of the LED light source module; two copper film electrodes are plated on the aluminum oxide frame. Use gold wires to connect the two copper film electrodes to the positive and negative electrodes of the LED light source module respectively. Finally, wrap the gold wire, the part where the copper film electrode is connected to the gold wire with transparent silica gel.
实施例2Example 2
本实施例除以下特征外,其余特征与实施例1同。This embodiment is the same as Embodiment 1 except the following features.
本实施例的用AlSiC复合基板封装的LED的第一层铜膜的厚度为1μm,所述第二层铜膜的厚度为20μm。The thickness of the first copper film of the LED packaged with the AlSiC composite substrate in this embodiment is 1 μm, and the thickness of the second layer copper film is 20 μm.
上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受所述实施例的限制,其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本发明的保护范围之内。The above-mentioned embodiment is a preferred embodiment of the present invention, but the embodiment of the present invention is not limited by the embodiment, and any other changes, modifications, substitutions and combinations made without departing from the spirit and principle of the present invention , simplification, all should be equivalent replacement methods, and are all included in the protection scope of the present invention.
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101673790A (en) * | 2008-09-11 | 2010-03-17 | 先进开发光电股份有限公司 | Light emitting diode and method for manufacturing the same |
CN201435407Y (en) * | 2009-07-06 | 2010-03-31 | 晶诚(郑州)科技有限公司 | Novel substrate used for encapsulating LED |
CN201927604U (en) * | 2010-10-29 | 2011-08-10 | 京东方科技集团股份有限公司 | LED (light-emitting diode) light source |
CN102270730A (en) * | 2011-07-27 | 2011-12-07 | 晶科电子(广州)有限公司 | LED (light emitting diode) device free of gold wires |
CN102569625A (en) * | 2012-01-05 | 2012-07-11 | 中国计量学院 | Copper line-clad aluminum silicon carbide ceramic substrate applicable to radiation of high-power LED |
CN203434193U (en) * | 2013-07-16 | 2014-02-12 | 华南理工大学 | LED packaged by use of AlSiC composite substrate |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201795340U (en) * | 2010-08-26 | 2011-04-13 | 杭州创元光电科技有限公司 | LED chip light source module manufactured by display chips |
CN202454557U (en) * | 2012-02-14 | 2012-09-26 | 张家港市金港镇东南电子厂 | LED integrated module |
CN102891141A (en) * | 2012-10-26 | 2013-01-23 | 张家港东能电子科技有限公司 | Waterproof anti-corrosion high-heat dispersion and high-insulation LED (Light-Emitting Diode) ceramic integrated light source and manufacturing method of the same |
-
2013
- 2013-07-16 CN CN201310301070.6A patent/CN103390715B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101673790A (en) * | 2008-09-11 | 2010-03-17 | 先进开发光电股份有限公司 | Light emitting diode and method for manufacturing the same |
CN201435407Y (en) * | 2009-07-06 | 2010-03-31 | 晶诚(郑州)科技有限公司 | Novel substrate used for encapsulating LED |
CN201927604U (en) * | 2010-10-29 | 2011-08-10 | 京东方科技集团股份有限公司 | LED (light-emitting diode) light source |
CN102270730A (en) * | 2011-07-27 | 2011-12-07 | 晶科电子(广州)有限公司 | LED (light emitting diode) device free of gold wires |
CN102569625A (en) * | 2012-01-05 | 2012-07-11 | 中国计量学院 | Copper line-clad aluminum silicon carbide ceramic substrate applicable to radiation of high-power LED |
CN203434193U (en) * | 2013-07-16 | 2014-02-12 | 华南理工大学 | LED packaged by use of AlSiC composite substrate |
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