CN103381573A - Chemical mechanical grinding plate for consolided grinding material used in SiC single crystal wafer grinding process - Google Patents

Abstract

The invention provides a chemical mechanical grinding plate for a consolided grinding material used in a SiC single crystal wafer grinding process. The technical scheme of the invention has the key points that the chemical mechanical grinding plate comprises a consolided grinding material layer, a coupling layer and a metal basal body layer; the consolided grinding material layer comprises the following materials by weight: 45 to 75 percent of grinding material, 5 to 20 percent of oxidant, 5 to 20 part of grinding additive, 1 to 5 percent of lubricant, 5 to 35 percent of cement, and 1 to 10 percent of filling material. According to the chemical mechanical grinding plate, the processing cost of a SiC single crystal wafer can be reduced effectively; the processing quality of the SiC single crystal wafer is improved.

Description

A kind of SiC single wafer grinding process uses solid abrasive chemical mechanical grinding disk

Technical field:

The invention relates to the grinding of a SiC single wafer, in particular to a solid abrasive chemical mechanical grinding disc suitable for the SiC single wafer grinding process. the

Background technique:

SiC single crystal substrates are widely used in microelectronics and optoelectronics industries, such as semiconductor lighting, integrated circuits, sensors, etc. The performance and manufacturing cost of SiC-based devices are important factors restricting the development of microelectronics, optoelectronics and other industries, but the performance of devices is closely related to the surface processing quality of SiC single crystal substrates. Therefore, how to achieve high precision, high quality and high efficiency Realizing ultra-smooth and damage-free surface processing of SiC single crystal substrates at low cost has become a frontier research topic in the field of ultra-precision processing technology. At present, the processing of SiC single crystal substrates mainly follows the traditional processing technology of crystal substrates: internal circular saw slicing, free abrasive grinding and chemical mechanical polishing (CMP). the

The grinding process is an important process before the final chemical mechanical polishing. Its quality and cost not only determine the quality of the subsequent process, but also determine the processing cost of the entire process. At present, the grinding efficiency of free abrasives is high, but the surface after grinding Poor flatness. On the one hand, the subsequent process of grinding is chemical mechanical polishing. Free abrasive chemical mechanical polishing cannot improve the surface smoothness after grinding, but can only reduce surface roughness and surface damage; on the other hand, the diamond abrasive used in free abrasive grinding is a one-time It is difficult to recycle and reuse, and the utilization rate of abrasives is low, so compared with fixed abrasive grinding, its grinding cost is higher. At present, the fixed abrasive chemical mechanical grinding disc is mainly composed of three parts: a fixed abrasive layer, a connecting layer, and a metal matrix layer. The selection of the material of the fixed abrasive layer is the most important thing for the fixed abrasive chemical mechanical grinding disc used in the SiC single wafer grinding process. of. the

Invention content:

The object of the present invention is to provide a kind of solid abrasive chemical mechanical grinding disc for SiC single wafer grinding process. the

The technical solution of the present invention is a consolidated abrasive chemical mechanical grinding disc for the SiC single wafer grinding process, which includes a consolidated abrasive layer, a connecting layer, and a metal matrix layer, and is characterized in that: the consolidated abrasive layer consists of : Abrasive 45-75%; Oxidant 5-20%; Research aid 5-20%; Lubricant 1-5%; Bonding agent 5-35%; Filler 1-10%. The above-mentioned various materials are placed into a hot press machine, and the preparation can be completed after being kept warm after hot pressing. The abrasive is a mixture of diamond micropowder and silicon carbide micropowder or a mixture of diamond micropowder and boron carbide micropowder or a mixture of diamond micropowder, silicon carbide micropowder and boron carbide micropowder. The particle size of the boron carbide micropowder, cubic boron nitride micropowder or diamond micropowder is 3.5-50 μm. The oxidizing agent is one or a mixture of two or three of sodium hydroxide, glycerol and triethanolamine. Described research assistant is one or the mixture of two or more in iron oxide powder, iron powder, stearic acid. The lubricant is one or a mixture of molybdenum disulfide, spherical nano carbon powder and polytetrafluoroethylene powder. The binder is one of thermosetting phenolic resin, thermosetting polyurethane resin and thermosetting polyimide resin. The filler is one of cryolite, walnut shell powder or a mixture thereof. The particle size of the iron oxide powder and the iron powder is 10 μm˜150 μm. The particle size of the molybdenum disulfide is 5 μm to 40 μm, the particle size of the spherical nano-carbon powder is 5 nm, and the average particle size of the polytetrafluoroethylene powder is less than 10 μm. The average particle size of the cryolite is 20 μm-70 μm, and the average particle size of the walnut shell powder is 20 μm-70 μm. the

The invention can effectively reduce the processing cost of the SiC single crystal substrate and improve the processing quality of the SiC single crystal substrate. the

Detailed ways:

Example 1:

Select the following proportions for mixing to manufacture one fixed abrasive chemical mechanical grinding disc, and its weight percentage is shown in Table 1. the

Table 1 Consolidated abrasive chemical mechanical grinding disc No. 1 composition

Using the fixed abrasive chemical mechanical grinding disc made of the above ratio, grind a 2-inch 6H-SiC single wafer (0001) C surface and Si surface on a ZYP300 grinder. Before grinding, the surface roughness Ra is about 0.6 μm. The grinding pressure is 2psi, the rotation speed of the grinding disc is 40r/min, the rotation speed of the workpiece is 40r/min, and the grinding time is 30min. After grinding, the surface roughness of the C surface of the 6H-SiC single wafer (0001) becomes 0.35μm, and the grinding rate reaches 0.03μm/min; the surface roughness of the Si surface of 6H-SiC single wafer (0001) becomes 0.30μm, and the grinding rate reaches 0.05μm/min. the

Example 2:

Select the following proportions for mixing to manufacture one fixed abrasive chemical mechanical grinding disc, and its weight percentage is shown in Table 2. the

Table 2 Consolidated Abrasive Chemical Mechanical Grinding Disc No. 2 Composition

Using the fixed abrasive chemical mechanical grinding disc made of the above ratio, grind a 2-inch 6H-SiC single wafer (0001) C surface and Si surface on a ZYP300 grinder. Before grinding, the surface roughness Ra is about 0.6 μm. The grinding pressure is 2psi, the rotation speed of the grinding disc is 40r/min, the rotation speed of the workpiece is 40r/min, and the grinding time is 30min. After grinding, the surface roughness of the C surface of the 6H-SiC single wafer (0001) becomes 0.32μm, and the grinding rate reaches 0.55 μm/min; the surface roughness of the Si surface of 6H-SiC single wafer (0001) becomes 0.28 μm, and the grinding rate reaches 0.46 μm/min. the

Example 3:

Select the following proportions for mixing to manufacture one fixed abrasive chemical mechanical grinding disc, and its weight percentage is shown in Table 3. the

Table 3 Composition of No. 3 Consolidated Abrasive Chemical Mechanical Grinding Disc

Using the fixed abrasive chemical mechanical grinding disc made of the above ratio, grind a 2-inch 6H-SiC single wafer (0001) C surface and Si surface on a ZYP300 grinder. Before grinding, the surface roughness Ra is about 0.6 μm. The grinding pressure is 2psi, the rotation speed of the grinding disc is 40r/min, the rotation speed of the workpiece is 40r/min, and the grinding time is 30min. After grinding, the surface roughness of the C surface of the 6H-SiC single wafer (0001) becomes 0.45μm, and the grinding rate reaches 1.10 μm/min; the surface roughness of the Si surface of 6H-SiC single wafer (0001) becomes 0.41 μm, and the grinding rate reaches 1.25 μm/min. the

Example 4:

Select the following proportions to mix to manufacture 1 fixed abrasive chemical-mechanical grinding disc, and its weight percentage is shown in Table 4. the

Table 4 Consolidated Abrasive Chemical Mechanical Grinding Disc No. 4 Composition

Using the fixed abrasive chemical mechanical grinding disc made of the above ratio, grind a 2-inch 6H-SiC single wafer (0001) C surface and Si surface on a ZYP300 grinder. Before grinding, the surface roughness Ra is about 0.6 μm. The grinding pressure is 2psi, the rotating speed of the grinding disc is 40r/min, the rotating speed of the workpiece is 40r/min, and the grinding time is 30min. After grinding, the surface roughness of the C surface of the 6H-SiC single wafer (0001) becomes 0.55μm, and the grinding rate reaches 1.93μm/min; the surface roughness of the Si surface of 6H-SiC single wafer (0001) becomes 0.50μm, and the grinding rate reaches 2.05μm/min. the

Embodiment 5:

Select the following proportions for mixing to manufacture one fixed abrasive chemical mechanical grinding disc, and its weight percentage is shown in Table 5. the

Table 5 Composition of Consolidated Abrasive Chemical Mechanical Grinding Disc No. 5

Using the fixed abrasive chemical mechanical grinding disc made of the above ratio, grind a 2-inch 6H-SiC single wafer (0001) C surface and Si surface on a ZYP300 grinder. Before grinding, the surface roughness Ra is about 0.6 μm. The grinding pressure is 2psi, the rotating speed of the grinding disc is 40r/min, the rotating speed of the workpiece is 40r/min, and the grinding time is 30min. After grinding, the surface roughness of the C surface of the 6H-SiC single wafer (0001) becomes 0.25μm, and the grinding rate reaches 0.13μm/min; the surface roughness of the Si surface of 6H-SiC single wafer (0001) becomes 0.20μm, and the grinding rate reaches 0.11μm/min. the

Embodiment 6:

Select the following proportions for mixing to manufacture one fixed abrasive chemical mechanical grinding disc, and its weight percentage is shown in Table 6. the

Table 6 Consolidated Abrasive Chemical Mechanical Grinding Disc No. 6 Composition

Using the fixed abrasive chemical mechanical grinding disc made of the above ratio, grind a 2-inch 6H-SiC single wafer (0001) C surface and Si surface on a ZYP300 grinder. Before grinding, the surface roughness Ra is about 0.6 μm. The grinding pressure is 2psi, the rotating speed of the grinding disc is 40r/min, the rotating speed of the workpiece is 40r/min, and the grinding time is 30min. After grinding, the surface roughness of the C surface of the 6H-SiC single wafer (0001) becomes 0.22μm, and the grinding rate reaches 0.19μm/min; the surface roughness of the (0001) Si surface of 6H-SiC single wafer becomes 0.21μm, and the grinding rate reaches 0.25μm/min. the

Embodiment 7:

Select the following proportions for mixing to manufacture one fixed abrasive chemical mechanical grinding disc, and its weight percentage is shown in Table 7. the

Table 7 Consolidated Abrasive Chemical Mechanical Grinding Disc No. 7 Composition

Using the fixed abrasive chemical mechanical grinding disc made of the above ratio, grind a 2-inch 6H-SiC single wafer (0001) C surface and Si surface on a ZYP300 grinder. Before grinding, the surface roughness Ra is about 0.6 μm. The grinding pressure is 2psi, the rotation speed of the grinding disc is 40r/min, the rotation speed of the workpiece is 40r/min, and the grinding time is 30min. After grinding, the surface roughness of the C surface of the 6H-SiC single wafer (0001) becomes 0.25μm, and the grinding rate reaches 0.33μm/min; the surface roughness of the Si surface of 6H-SiC single wafer (0001) becomes 0.20μm, and the grinding rate reaches 0.35μm/min. the

Embodiment 8:

Select the following proportions for mixing to manufacture one fixed abrasive chemical mechanical grinding disc, and its weight percentage is shown in Table 8. the

Table 8 Consolidated Abrasive Chemical Mechanical Grinding Disc No. 8 Composition

Using the fixed abrasive chemical mechanical grinding disc made of the above ratio, grind a 2-inch 6H-SiC single wafer (0001) C surface and Si surface on a ZYP300 grinder. Before grinding, the surface roughness Ra is about 0.6 μm. The grinding pressure is 2psi, the rotation speed of the grinding disc is 40r/min, the rotation speed of the workpiece is 40r/min, and the grinding time is 30min. After grinding, the surface roughness of the C surface of the 6H-SiC single wafer (0001) becomes 0.27μm, and the grinding rate reaches 0.13μm/min; the surface roughness of the Si surface of 6H-SiC single wafer (0001) becomes 0.19μm, and the grinding rate reaches 0.15μm/min. the

Embodiment 9:

Select the following proportions for mixing to manufacture one fixed abrasive chemical mechanical grinding disc, and its weight percentage is shown in Table 9. the

Table 9 Consolidated Abrasive Chemical Mechanical Grinding Disc No. 9 Composition

Using the fixed abrasive chemical mechanical grinding disc made of the above ratio, grind a 2-inch 6H-SiC single wafer (0001) C surface and Si surface on a ZYP300 grinder. Before grinding, the surface roughness Ra is about 0.6 μm. The grinding pressure is 2psi, the rotating speed of the grinding disc is 40r/min, the rotating speed of the workpiece is 40r/min, and the grinding time is 30min. After grinding, the surface roughness of the C surface of the 6H-SiC single wafer (0001) becomes 0.25μm, and the grinding rate reaches 0.11 μm/min; the surface roughness of the Si surface of 6H-SiC single wafer (0001) becomes 0.21 μm, and the grinding rate reaches 0.15 μm/min. the

Embodiment 10:

Select the following proportions for mixing to manufacture one fixed abrasive chemical mechanical grinding disc, and its weight percentage is shown in Table 10. the

Table 10 Consolidated abrasive chemical mechanical grinding disc No. 10 composition

Using the fixed abrasive chemical mechanical grinding disc made of the above ratio, grind a 2-inch 6H-SiC single wafer (0001) C surface and Si surface on a ZYP300 grinder. Before grinding, the surface roughness Ra is about 0.6 μm. The grinding pressure is 2psi, the rotating speed of the grinding disc is 40r/min, the rotating speed of the workpiece is 40r/min, and the grinding time is 30min. After grinding, the surface roughness of the C surface of the 6H-SiC single wafer (0001) becomes 0.19μm, and the grinding rate reaches 0.13μm/min; the surface roughness of the Si surface of 6H-SiC single wafer (0001) becomes 0.20μm, and the grinding rate reaches 0.16μm/min. the

Example 11:

Select the following proportions to mix to manufacture one fixed abrasive chemical mechanical grinding disc, and its weight percentage is shown in Table 11. the

Table 11 Composition of No. 11 consolidated abrasive chemical mechanical grinding disc

Using the fixed abrasive chemical mechanical grinding disc made of the above ratio, grind a 2-inch 6H-SiC single wafer (0001) C surface and Si surface on a ZYP300 grinder. Before grinding, the surface roughness Ra is about 0.6 μm. The grinding pressure is 2psi, the rotation speed of the grinding disc is 40r/min, the rotation speed of the workpiece is 40r/min, and the grinding time is 30min. After grinding, the surface roughness of the C surface of the 6H-SiC single wafer (0001) becomes 0.27μm, and the grinding rate reaches 0.09μm/min; the surface roughness of the Si surface of 6H-SiC single wafer (0001) becomes 0.23μm, and the grinding rate reaches 0.11μm/min. the

Example 12:

Select the following proportions for mixing to manufacture one fixed abrasive chemical mechanical grinding disc, and its weight percentage is shown in Table 12. the

Table 12 Composition of No. 12 Consolidated Abrasive Chemical Mechanical Grinding Disc

Using the fixed abrasive chemical mechanical grinding disc made of the above ratio, grind a 2-inch 6H-SiC single wafer (0001) C surface and Si surface on a ZYP300 grinder. Before grinding, the surface roughness Ra is about 0.6 μm. The grinding pressure is 2psi, the rotating speed of the grinding disc is 40r/min, the rotating speed of the workpiece is 40r/min, and the grinding time is 30min. After grinding, the surface roughness of the C surface of the 6H-SiC single wafer (0001) becomes 0.25μm, and the grinding rate reaches 0.10 μm/min; the surface roughness of the Si surface of 6H-SiC single wafer (0001) becomes 0.20 μm, and the grinding rate reaches 0.12 μm/min. the

Example 13:

Select the following proportions for mixing to manufacture one fixed abrasive chemical mechanical grinding disc, and its weight percentage is shown in Table 13. the

Table 13 Composition of No. 13 Consolidated Abrasive Chemical Mechanical Grinding Disc

Using the fixed abrasive chemical mechanical grinding disc made of the above ratio, grind a 2-inch 6H-SiC single wafer (0001) C surface and Si surface on a ZYP300 grinder. Before grinding, the surface roughness Ra is about 0.6 μm. The grinding pressure is 2psi, the rotation speed of the grinding disc is 40r/min, the rotation speed of the workpiece is 40r/min, and the grinding time is 30min. After grinding, the surface roughness of the C surface of the 6H-SiC single wafer (0001) becomes 0.21μm, and the grinding rate reaches 0.23μm/min; the surface roughness of the (0001) Si surface of 6H-SiC single wafer becomes 0.25μm, and the grinding rate reaches 0.25μm/min. the

Example 14:

Select the following proportions for mixing to manufacture one fixed abrasive chemical-mechanical grinding disc, and its weight percentage is shown in Table 14. the

Table 14 Composition of No. 14 Consolidated Abrasive Chemical Mechanical Grinding Disc

Using the fixed abrasive chemical mechanical grinding disc made of the above ratio, grind a 2-inch 6H-SiC single wafer (0001) C surface and Si surface on a ZYP300 grinder. Before grinding, the surface roughness Ra is about 0.6 μm. The grinding pressure is 2psi, the rotation speed of the grinding disc is 40r/min, the rotation speed of the workpiece is 40r/min, and the grinding time is 30min. After grinding, the surface roughness of the C surface of the 6H-SiC single wafer (0001) becomes 0.60μm, and the grinding rate reaches 2.11μm/min; the surface roughness of the (0001) Si surface of 6H-SiC single wafer becomes 0.57μm, and the grinding rate reaches 2.25μm/min. the

Example 15:

Select the following proportions for mixing to manufacture one fixed abrasive chemical mechanical grinding disc, and its weight percentage is shown in Table 15. the

Table 15 Composition of No. 15 consolidated abrasive chemical mechanical grinding disc

Using the fixed abrasive chemical mechanical grinding disc made of the above ratio, grind a 2-inch 6H-SiC single wafer (0001) C-side and Si-side on a ZYP300 grinder. Before grinding, the surface roughness Ra is about 0.6 μm. The grinding pressure is 2psi, the rotation speed of the grinding disc is 40r/min, the rotation speed of the workpiece is 40r/min, and the grinding time is 30min. It reaches 1.95 μm/min; the surface roughness of the Si surface of 6H-SiC single wafer (0001) becomes 0.50 μm, and the grinding rate reaches 2.20 μm/min.

Example 16:

Select the following proportions for mixing to manufacture one fixed abrasive chemical mechanical grinding disc, and its weight percentage is shown in Table 16. the

Table 16 Composition of No. 16 Consolidated Abrasive Chemical Mechanical Grinding Disc

Using the fixed abrasive chemical mechanical grinding disc made of the above ratio, grind a 2-inch 6H-SiC single wafer (0001) C surface and Si surface on a ZYP300 grinder. Before grinding, the surface roughness Ra is about 0.6 μm. The grinding pressure is 2psi, the rotation speed of the grinding disc is 40r/min, the rotation speed of the workpiece is 40r/min, and the grinding time is 30min. After grinding, the surface roughness of the C surface of the 6H-SiC single wafer (0001) becomes 0.55μm, and the grinding rate reaches 1.83μm/min; the surface roughness of the Si surface of 6H-SiC single wafer (0001) becomes 0.52μm, and the grinding rate reaches 1.95μm/min. the

It should be understood that, for those skilled in the art, the present invention can be improved or transformed according to the above description, and all these improvements and transformations should belong to the protection scope of the appended claims of the present invention. the

Claims (7)

1. A SiC single wafer grinding process uses a consolidated abrasive chemical mechanical grinding disc, which includes a consolidated abrasive layer, a connecting layer, and a metal matrix layer, and is characterized in that: the consolidated abrasive layer comprises: 45-75% abrasive according to the weight percentage content %; oxidant 5-20%; research aid 5-20%; lubricant 1-5%; binder 5-35%; filler 1-10%. 2. a kind of SiC single wafer lapping process as claimed in claim 1 is characterized in that: its described abrasive material is the mixture of diamond micropowder and silicon carbide micropowder or is diamond micropowder The mixture with boron carbide powder or the mixture of diamond powder, silicon carbide powder and boron carbide powder. 3. a kind of SiC single wafer grinding process as claimed in claim 1 is characterized in that: described oxidizing agent is a kind of in sodium hydroxide, glycerol, triethanolamine or A mixture of two or three. 4. a kind of SiC single wafer lapping process as claimed in claim 1 is characterized in that: described research aid is one of iron oxide powder, iron powder, stearic acid One or a mixture of two or more. 5. a kind of SiC single wafer grinding process as claimed in claim 1 is characterized in that: described lubricant is molybdenum disulfide, spherical nano-carbon powder, polytetrafluoroethylene powder one or a mixture of two or more. 6. A kind of SiC single wafer lapping process as claimed in claim 1 is characterized in that: described binding agent is thermosetting phenolic resin, thermosetting polyurethane resin, thermosetting type One of the polyimide resins. 7 . The fixed abrasive chemical mechanical grinding disc for SiC single wafer grinding process according to claim 1 , wherein the filler is one of cryolite, walnut shell powder or a mixture thereof. 8 .