CN103325339A - Pixel circuit, pixel circuit driving method, organic light-emitting display panel and display device - Google Patents
Pixel circuit, pixel circuit driving method, organic light-emitting display panel and display device Download PDFInfo
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- CN103325339A CN103325339A CN2013102500407A CN201310250040A CN103325339A CN 103325339 A CN103325339 A CN 103325339A CN 2013102500407 A CN2013102500407 A CN 2013102500407A CN 201310250040 A CN201310250040 A CN 201310250040A CN 103325339 A CN103325339 A CN 103325339A
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 230000006698 induction Effects 0.000 claims description 22
- 238000005401 electroluminescence Methods 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000002800 charge carrier Substances 0.000 claims description 7
- 230000009467 reduction Effects 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 abstract description 41
- 229920001621 AMOLED Polymers 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 238000009825 accumulation Methods 0.000 description 7
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000032683 aging Effects 0.000 description 4
- 230000001934 delay Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
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-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
- G09G3/3241—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element the current through the light-emitting element being set using a data current provided by the data driver, e.g. by using a two-transistor current mirror
- G09G3/325—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element the current through the light-emitting element being set using a data current provided by the data driver, e.g. by using a two-transistor current mirror the data current flowing through the driving transistor during a setting phase, e.g. by using a switch for connecting the driving transistor to the data driver
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
- G06F3/0418—Control or interface arrangements specially adapted for digitisers for error correction or compensation, e.g. based on parallax, calibration or alignment
- G06F3/04184—Synchronisation with the driving of the display or the backlighting unit to avoid interferences generated internally
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0417—Special arrangements specific to the use of low carrier mobility technology
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0243—Details of the generation of driving signals
- G09G2310/0251—Precharge or discharge of pixel before applying new pixel voltage
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0262—The addressing of the pixel, in a display other than an active matrix LCD, involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependent on signals of two data electrodes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0247—Flicker reduction other than flicker reduction circuits used for single beam cathode-ray tubes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2354/00—Aspects of interface with display user
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- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- Computer Hardware Design (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Abstract
The invention provides a pixel circuit, a pixel circuit driving method, an organic light-emitting display panel and a display device. A driving transistor, a first capacitor, an organic light-emitting diode, a first control unit and a driving unit are arranged inside the pixel circuit. The pixel circuit enables a grid potential of the driving transistor to be fixed through a grid which inputs data of voltages into the driving transistor directly, meanwhile, self discharge of a storage capacitor is used for storing the threshold voltages of the driving transistor into the storage capacitor, a fixed potential is introduced to one electrode of the storage capacitor to remove the influence of line internal resistance on light-emitting currents, and therefore the unevenness of image display of the panel is improved.
Description
Technical field
The present invention relates to the organic light emitting display field, relate in particular to a kind of image element circuit and driving method thereof, organic electroluminescence display panel and display device.
Background technology
AMOLED(active matrix organic light-emitting diode: Active Matrix Organic Light Emitting Diode) why can be luminous, normally by the DTFT(driving transistors) drive current that produces when state of saturation drives.
At present, the main production method of AMOLED display panel is to utilize the LTPS(low temperature polycrystalline silicon) the TFT(thin film transistor (TFT)) technology makes.But, because LTPS technology immature, even if same technological parameter, the Vth(transistor threshold voltage of the TFT of the display panel diverse location of making) larger difference is also arranged, Vth also has drift simultaneously.
And in existing traditional AMOLED driving circuit, in the drive current computing formula that DTFT produces, comprise the Vth of TFT usually.So as mentioned above, because there is larger difference in the Vth of the TFT of display panel diverse location in the prior art, cause the drive current of AMOLED under the same gray scale voltage different, therefore caused display panel diverse location brightness meeting variant, caused display panel brightness homogeneity poor.
In addition, the application of touch function in various display panels especially mobile the demonstration is more and more wider, almost become the standard configuration of intelligent mobile device, existing processes is that display panel and touch panel are separately made, and then fit, such technological process make to show touch screen functionality panel complex process, the cost height, and what also be unfavorable for showing is lightening.
Summary of the invention
The invention provides a kind of image element circuit and driving method thereof, organic electroluminescence display panel and display device, can eliminate the image element circuit internal resistance to the influence of light emission drive current, can improve homogeneity and the reliability of organic electroluminescence display panel brightness.
It is as follows to the invention provides scheme:
The embodiment of the invention provides a kind of image element circuit, comprising: driving transistors, first electric capacity, Organic Light Emitting Diode, first control module and driver element; Wherein:
The drain electrode of described driving transistors is connected with the anode of described Organic Light Emitting Diode;
The negative electrode of described Organic Light Emitting Diode is connected with the second level signal input end;
Described first control module is connected with the first sweep signal input end, data line, fixed voltage input end, described first electric capacity, first end, the grid of described driving transistors, described driver element respectively, be used under the control of first sweep signal, be fixed voltage with the control of Electric potentials of described first electric capacity, first end, data voltage is inputed to the grid of described driving transistors, utilize the self discharge of first electric capacity by driving transistors that the current potential of first electric capacity, second end is remained data voltage and drive transistor threshold voltage sum;
Driver element is connected with source electrode, described first control module with the grid of led control signal input end, the first level signal input end, described first electric capacity, second end, described driving transistors respectively, be used under led control signal control, utilize the pressure reduction at the described first electric capacity two ends as the gate source voltage of driving transistors, it is luminous to drive Organic Light Emitting Diode.
Preferably, described first control module comprises:
The 6th transistor and the 7th transistor; Wherein:
The described the 6th transistorized source electrode is connected with described fixed voltage input end, the described the 6th transistorized grid is connected with the described first sweep signal input end, and described the 6th transistor drain is connected in node m with described first electric capacity, first end, driver element respectively;
The 7th transistorized source electrode is connected with described data line, and the described the 7th transistorized grid is connected with the described first sweep signal input end, and described the 7th transistor drain is connected in node g with described drive transistor gate, described driver element respectively.
Preferably, described driver element comprises:
The 3rd transistor and the 5th transistor; Wherein:
The described the 3rd transistorized source electrode is connected with the described first level signal input end, the described the 3rd transistorized grid is connected with described led control signal input end, and described the 3rd transistor drain is connected in node n with the source electrode of described first electric capacity, second end, driving transistors respectively;
The described the 5th transistorized source electrode is connected with described node g, and the described the 5th transistorized grid is connected with described led control signal input end, and described the 5th transistor drain is connected with described node m.
Preferably, described image element circuit also comprises:
Be used for to eliminate described Organic Light Emitting Diode luminescent layer the 4th transistor of compound charge carrier not at the interface;
Described the 4th transistor drain is connected with the described second level signal input end, and the described the 4th transistorized grid is connected with the described first sweep signal input end, and the described the 4th transistorized source electrode is connected with the anode of described Organic Light Emitting Diode.
Preferably, described image element circuit also comprises: induction electrode, amplifier transistor, second electric capacity, charhing unit and second control module; Wherein:
Described induction electrode is connected in node p with the grid of described charhing unit, second electric capacity, first end, amplifier transistor respectively;
The source electrode of described amplifier transistor is connected with the described first level input end, and described second control module of the drain electrode of described amplifier transistor connects;
Second end of described second electric capacity is connected with the second sweep signal input end;
Described charhing unit is connected with the first sweep signal input end, the first level input end and described node p respectively, is used under the control of first sweep signal, is described second electric capacity charging;
Described second control module is connected with the drain electrode of the described second sweep signal input end, the line of induction, described amplifier transistor respectively, be used under described second sweep signal control, and amplifier transistor amplifying signal electric current is transferred to chip by second control module is touched determining whether.
Preferably, described charhing unit comprises:
Transistor seconds;
The source electrode of described transistor seconds is connected with the described first level signal input end, and the grid of described transistor seconds is connected with the described first sweep signal input end, and the drain electrode of described transistor seconds is connected with described node p.
Preferably, described second control module comprises:
The first transistor;
The source electrode of described the first transistor is connected with the drain electrode of described amplifier transistor, the grid of described the first transistor and the described second sweep signal input end, and the drain electrode of described the first transistor is connected with the described line of induction.
Preferably, the transistor that comprises in the described image element circuit is the P transistor npn npn;
The described first level signal input end is connected with high level;
The described second level signal input end is connected with low level.
The embodiment of the invention also provides a kind of image element driving method that drives the described image element circuit that the invention described above embodiment provides, and comprising:
Phase one, first control module is fixed voltage with the control of Electric potentials of first electric capacity, first end, data voltage is inputed to the grid of driving transistors, utilize first electric capacity to make the current potential of electric capacity second end of winning remain data voltage and drive transistor threshold voltage sum by the self discharge of driving transistors, driver element is in cut-off state;
Subordinate phase, first control module, driver element and driving transistors all are in cut-off state;
Phase III, first control module is in cut-off state, and driver element utilizes the pressure reduction at the first electric capacity two ends as the gate source voltage of driving transistors under led control signal control, and it is luminous to drive Organic Light Emitting Diode.
Preferably, in the phase one, the 6th transistor, the 7th transistor are in conducting state, and the 3rd transistor, the 5th transistor are in cut-off state;
In subordinate phase, the 3rd transistor, the 5th transistor, the 6th transistor, the 7th transistor all are in cut-off state;
In the phase III, the 3rd transistor, the 5th transistor are in conducting state, and the 6th transistor, the 7th transistor are in cut-off state.
Preferably, in the phase one, the 4th transistor is in conducting state;
In subordinate phase, the 4th transistor is in cut-off state;
In the phase III, the 4th transistor is in cut-off state.
Preferably, in the phase one, first sweep signal is low level, and led control signal is high level;
In subordinate phase, first sweep signal is high level, and led control signal is high level;
In the phase III, first sweep signal is high level, and led control signal is low level.
Preferably, described method also comprises:
Phase one, it is the charging of second electric capacity that charhing unit utilizes first level signal, and amplifier transistor and second control module are in cut-off state;
Subordinate phase and phase III, charhing unit is in cut-off state, and the touch signal current delivery that second control module amplifies amplifier transistor is to the line of induction.
Preferably, in the phase one, transistor seconds is in conducting state, and the first transistor is in cut-off state;
In subordinate phase, transistor seconds is in cut-off state, the first transistor is in conducting state;
In the phase III, transistor seconds is in cut-off state, the first transistor is in conducting state.
Preferably, in the phase one, first sweep signal is low level, and second sweep signal is high level;
In subordinate phase, first sweep signal is high level, and second sweep signal is low level;
In the phase III, first sweep signal is high level, and second sweep signal is low level.
The embodiment of the invention also provides a kind of organic electroluminescence display panel, and it specifically can comprise the described image element circuit that the invention described above embodiment provides.
The embodiment of the invention also provides a kind of display device, and it specifically can comprise the described organic electroluminescence display panel that the invention described above embodiment provides.
From the above as can be seen, image element circuit provided by the invention and driving method thereof, organic electroluminescence display panel and display device are by arranging driving transistors, first electric capacity, Organic Light Emitting Diode, first control module and driver element; Described first control module is connected with the first sweep signal input end, data line, fixed voltage input end, described first electric capacity, first end, the grid of described driving transistors, described driver element respectively, be used under the control of first sweep signal, be fixed voltage with the control of Electric potentials of described first electric capacity, first end, utilize first electric capacity by the driving transistors self discharge current potential of described first electric capacity, second end to be remained data voltage and drive transistor threshold voltage sum; Driver element is connected with source electrode, described first control module with the grid of led control signal input end, the first level input end, described first electric capacity, second end, described driving transistors respectively, be used under led control signal control, utilize the pressure reduction at the described first electric capacity two ends as the gate source voltage of driving transistors, it is luminous to drive Organic Light Emitting Diode.This image element circuit is by being directly inputted to data voltage the grid of driving transistors, make the grid potential of driving transistors fix, the self discharge that utilizes memory capacitance simultaneously is kept at the threshold voltage of driving transistors in the memory capacitance, introduce set potential in the electrode of memory capacitance and eliminate the circuit internal resistance to the influence of glow current, thereby improved the unevenness that the panel picture shows.
Description of drawings
The image element circuit structure synoptic diagram one that Fig. 1 provides for the embodiment of the invention;
The image element circuit structure synoptic diagram two that Fig. 2 provides for the embodiment of the invention;
The image element circuit structure synoptic diagram three that Fig. 3 provides for the embodiment of the invention;
The image element circuit driving method schematic flow sheet that Fig. 4 provides for the embodiment of the invention;
Fig. 5 drives signal timing diagram for the image element circuit that the embodiment of the invention provides;
The pixel circuit section schematic equivalent circuit one that Fig. 6 provides for the embodiment of the invention;
The pixel circuit section schematic equivalent circuit two that Fig. 7 provides for the embodiment of the invention;
The pixel circuit section schematic equivalent circuit three that Fig. 8 provides for the embodiment of the invention;
The pixel circuit section schematic equivalent circuit four that Fig. 9 provides for the embodiment of the invention.
Embodiment
For the purpose, technical scheme and the advantage that make the embodiment of the invention is clearer, below in conjunction with the accompanying drawing of the embodiment of the invention, the technical scheme of the embodiment of the invention is clearly and completely described.Obviously, described embodiment is a part of embodiment of the present invention, rather than whole embodiment.Based on described embodiments of the invention, the every other embodiment that those of ordinary skills obtain belongs to the scope of protection of the invention.
Unless define in addition, the technical term of Shi Yonging or scientific terminology should be the ordinary meaning that the personage that has general technical ability under the present invention in the field understands herein.Any order, quantity or importance do not represented in " first " of using in patent application specification of the present invention and claims, " second " and similar word, and just are used for distinguishing different ingredients.Equally, restricted number do not represented in " one " or similar words such as " one " yet, but there is at least one in expression." connection " or " linking to each other " etc., similar word was not to be defined in connection physics or machinery, but can comprise electrical connection, no matter be directly or indirect." on ", D score, " left side ", " right side " etc. only are used for the expression relative position relation, after the absolute position that is described object changed, then this relative position relation also correspondingly changed.
The embodiment of the invention provides a kind of image element circuit, and as shown in Figure 1, it is specifically to comprise: driving transistors DTFT, first capacitor C
ST, Organic Light Emitting Diode OLED, first control module 11 and driver element 12; Wherein:
The drain electrode of driving transistors DTFT is connected with the anode of Organic Light Emitting Diode OLED;
The negative electrode of Organic Light Emitting Diode OLED is connected with the second level signal input end;
First control module 11 is respectively with the first sweep signal G(n) input end, data line (Data Line, i.e. data voltage Vdata input end), fixed voltage Vref input end, first capacitor C
ST, driving transistors DTFT, driver element 12 connect, be used under the control of first sweep signal, with first capacitor C
STThe control of Electric potentials of first end is fixed voltage Vref, and the grid with data voltage Vdata inputs to driving transistors T6 utilizes first capacitor C
STSelf discharge by driving transistors DTFT makes the capacitor C of winning
STThe current potential of second end remains data voltage Vdata and drive transistor threshold voltage Vthd sum;
The image element circuit that the embodiment of the invention provides by directly data voltage Vdata being input to the grid of driving transistors DTFT, makes driving transistors DTFT grid potential fix, and utilizes memory capacitance C simultaneously
STSelf discharge the threshold voltage vt hd of driving transistors DTFT is kept at first capacitor C
STIn, first capacitor C
STAn electrode in introduce set potential (for example fixed voltage Vref) to eliminate the circuit internal resistance to the influence of glow current, thereby make the OLED drive current unanimity at diverse location place in the organic electroluminescence display panel, can improve homogeneity and the reliability of organic electroluminescence display panel brightness.
In the present invention's one specific embodiment, as shown in Figure 2, first control module 11 specifically can comprise:
The 6th transistor T 6 and the 7th transistor T 7; Wherein:
The source electrode of the 6th transistor T 6 is connected with fixed voltage Vref input end, the grid of the 6th transistor T 6 and the first sweep signal G(n) input end is connected, the drain electrode of the 6th transistor T 6 respectively with first capacitor C
STFirst end, driver element 12 are connected in node m;
The source electrode of the 7th transistor T 7 is connected with data line, the grid of the 7th transistor T 7 and the first sweep signal G(n) input end is connected, and the drain electrode of the 7th transistor T 7 is connected in node g with driving transistors DTFT grid, driver element 12 respectively.
In the present invention's one specific embodiment, as shown in Figure 2, driver element 12 specifically can comprise:
The 3rd transistor T 3 and the 5th transistor T 5; Wherein:
The source electrode of the 3rd transistor T 3 is connected with the first level signal input end, the grid of the 3rd transistor T 3 and led control signal EM(n) input end is connected, the drain electrode of the 3rd transistor T 3 respectively with first capacitor C
STThe source electrode of second end, driving transistors DTFT is connected in node n;
The source electrode of the 5th transistor T 5 is connected with described node g, the grid of the 5th transistor T 5 and led control signal EM(n) input end is connected, and the drain electrode of the 5th transistor T 5 is connected with described node m.
The first related level signal of the embodiment of the invention is specifically as follows direct current high level signal VDD, also can be other regularly signals of input high level; And second level signal can be direct current low level signal VSS, also can be other regularly signals of output low level.
In the present invention's one specific embodiment, as shown in Figure 3, the image element circuit that the embodiment of the invention provides specifically can also comprise:
Induction electrode (SE:Sense Electrode) 13, amplifier transistor ATFT, second capacitor C
P, charhing unit 14 and second control module 15; Wherein:
The source electrode of amplifier transistor ATFT is connected with the first level input end, and drain electrode second control module 15 of amplifier transistor ATFT connects;
Second capacitor C
PSecond end and the second sweep signal G(n+1) input end is connected;
Charhing unit 14 respectively with the first sweep signal G(n) input end, the first level input end and node p be connected, be used at the first sweep signal G(n) under the control, for stating second capacitor C
PCharging;
As seen, the image element circuit that the embodiment of the invention provides, all right integrated touch circuit for detecting, control signal in the AMOLED light emission drive circuit that this touch circuit for detecting is multiplexing, the coupling capacitance that touches in the circuit for detecting is charged, and utilize amplifier tube transistor (Amplify TFT, be ATFT) amplify touching the touch signal that produces, when not increasing circuit structure and Operating Complexity, realized that well the touch circuit is integrated on panel, thereby can realize that internally-arranged type touch-screen and Organic Light Emitting Diode drive show integrated, are conducive to reduce thickness and the weight of display panel, and can reduce the cost of display panel.
In the present invention's one specific embodiment, as shown in Figure 2, charhing unit 14 specifically can comprise:
Transistor seconds T2;
Concrete, the source electrode of transistor seconds T2 is connected with the first level signal input end, the grid of transistor seconds T2 and the first sweep signal G(n) input end is connected, and the drain electrode of transistor seconds T2 is connected with node p.
In the present invention's one specific embodiment, as shown in Figure 2, second control module 15 specifically can comprise:
The first transistor T1;
Concrete, the source electrode of the first transistor T1 is connected with the drain electrode of amplifier transistor ATFT, the grid of the first transistor T1 and the second sweep signal G(n+1) input end, the drain electrode of the first transistor T1 is connected with the described line of induction.
In the present invention's one specific embodiment, the image element circuit that the embodiment of the invention provides specifically can also comprise:
Be used for to eliminate Organic Light Emitting Diode OLED luminescent layer the 4th transistor T 4 of compound charge carrier not at the interface.
Concrete, as shown in Figure 2, the drain electrode of the 4th transistor T 4 is connected with the second level signal input end, the grid of the 4th transistor T 4 and the first sweep signal G(n) input end is connected, and the source electrode of the 4th transistor T 4 is connected with the anode of Organic Light Emitting Diode OLED.
The 4th transistor T 4 that the embodiment of the invention is related, when opening, first sweep trace make the anode of Organic Light Emitting Diode OLED be shorted to for example VSS of the second level input end, thereby can eliminate the not compound charge carrier of Organic Light Emitting Diode OLED internal illumination bed interface accumulation, reduce Organic Light Emitting Diode OLED because the built in field of the formation of electric charge accumulation delays the aging of Organic Light Emitting Diode OLED.
In an alternate embodiment of the present invention, the transistor that the invention described above embodiment is related comprises the first transistor T1 to the seven transistor Ts 7, and driving transistors DTFT, amplifier transistor ATFT, specifically all can be the P transistor npn npn, and the source in the above-mentioned transistor, the drain electrode interchangeable.
The embodiment of the invention also provides a kind of image element circuit driving method that drives the image element circuit that the invention described above embodiment provides.As shown in Figure 4, the image element circuit driving method that provides of the embodiment of the invention specifically can comprise:
The image element circuit driving method that the embodiment of the invention provides by directly data voltage Vdata being input to the grid of driving transistors DTFT, makes driving transistors DTFT grid potential fix, and utilizes first capacitor C simultaneously
STThe driving transistors DTFT self discharge of passing through the threshold voltage vt hd of driving transistors DTFT is kept at first capacitor C
STIn, memory capacitance C
STAn electrode in introduce set potential (for example fixed voltage Vref) to eliminate the circuit internal resistance to the influence of glow current, thereby make the OLED drive current unanimity at diverse location place in the organic electroluminescence display panel, can improve homogeneity and the reliability of organic electroluminescence display panel brightness.
In the present invention's one specific embodiment, the image element circuit driving method that the embodiment of the invention provides specifically can also may further comprise the steps:
Phase one, it is second capacitor C that charhing unit 14 utilizes first level signal
PCharging, amplifier transistor ATFT and second control module 15 are in cut-off state;
Subordinate phase, charhing unit 14 and amplifier transistor ATFT are in cut-off state, second control module 15 with amplifier transistor ATFT amplify with the touch signal current delivery to the line of induction.
Phase III, charhing unit 14 is in cut-off state, and second control module 15 and amplifier transistor ATFT are in conducting state.
As seen, the image element circuit driving method that the embodiment of the invention provides, control signal in all right multiplexing AMOLED light emission drive circuit, the coupling capacitance that touches in the circuit for detecting is charged, and utilize amplifier tube transistor (Amplify TFT, be ATFT) amplify touching the touch signal that produces, thus when driving Organic Light Emitting Diode OELD is luminous, realize the detecting to touch signal.
In the present invention's one specific embodiment, the image element circuit driving method that the embodiment of the invention provides specifically can also may further comprise the steps:
In the phase one, the 4th transistor T 4 is in conducting state;
In subordinate phase, the 4th transistor T 4 is in cut-off state;
In the phase III, the 4th transistor T 4 is in cut-off state.
The image element circuit driving method that the embodiment of the invention provides, when opening, first sweep trace make the anode of Organic Light Emitting Diode OLED be shorted to for example VSS of the second level input end, thereby can eliminate the not compound charge carrier of Organic Light Emitting Diode OLED internal illumination bed interface accumulation, reduce Organic Light Emitting Diode OLED because the built in field of the formation of electric charge accumulation delays the aging of Organic Light Emitting Diode OLED.
Below, the sequential chart shown in 5 by reference to the accompanying drawings, the specific implementation process of the image element circuit driving method that the embodiment of the invention is provided is described.
Among this embodiment, first level signal is VDD, and second level signal is VSS.
The specific implementation process of this embodiment can comprise:
In the phase one: the first sweep signal G (n) is low level, the second sweep signal G (n+1) is high level, led control signal EM (n) is high level, transistor seconds T2, the 6th transistor T 6, the 7th transistor T 7 is opened and namely is in conducting state, the first transistor T1, the 3rd transistor T 3, the 5th transistor T 5 is closed and namely is in cut-off state, the drain electrode of amplifier transistor ATFT is in off state, the first level signal VDD is by the i.e. second capacitor C p charging of the coupling capacitance of transistor seconds T2, and this moment, another utmost point of the second capacitor C p electric capacity was that the current potential of node q is that the current potential of the second sweep signal G (n+1) is high level VGH.This moment, the part equivalent circuit diagram of image element circuit can be as shown in Figure 6, and wherein direction shown in the arrow is direction of current.
And since the first capacitor C st normal when luminous the current potential of n node be the first level signal VDD, after the 3rd transistor T 3 is closed, the grid potential of driving transistors DTFT is fixed as the data voltage Vdata of data line (Data line) input, still be in certain opening, therefore the n node of the first capacitor C st can be by driving transistors DTFT discharge, drops to data voltage Vdata and driving transistors T up to the current potential of n node
DTFTThreshold voltage | the Vthd| sum because the 6th transistor T 6 conducting states, the current potential of the m node of the first capacitor C st is fixed as set potential Vref always, therefore the voltage at the last two ends of the first capacitor C st is: Vcst=Vn-Vm=Vdata+|Vthd|-Vref; And the voltage at the second capacitor C p two ends is: Vcp=Vp-Vq=VDD-VGH.This moment, the part equivalent circuit diagram of image element circuit can be as shown in Figure 7.
Simultaneously because the 4th transistor T 4 is in conducting state, the anode of Organic Light Emitting Diode OLED is connected with the second level signal VSS, being present in hole transmission layer/luminescent layer (or luminescent layer/electron transfer layer) in glow phase has like this accumulated not compound unnecessary hole (or electronics) at the interface and has been consumed, reduce Organic Light Emitting Diode OLED because the built in field of the formation of electric charge accumulation delays the aging of OLED.
Subordinate phase: first sweep signal G (n) saltus step is high level, second sweep signal G (n+1) voltage jump is low level, led control signal EM (n) still is high level, therefore, the first transistor T1 and amplifier transistor ATFT are in conducting state, transistor seconds T2 to the seven transistor Ts 7 all are in cut-off state, driving transistors DTFT.Because transistor seconds T2 ends, the second capacitor C p electric capacity p point is unsettled, and therefore when second sweep signal G (n+1) jump in potential was low level, by the coupling of the second capacitor C p, node p was that the grid potential of amplifier transistor ATFT also can be followed downward saltus step.As for saltus step what, in two kinds of situation, if there is finger (Finger) to touch, because can formation coupling capacitance Cf between finger and the induction electrode S E, so the current potential that p is ordered be:
Vp=VDD+(VGL-VGH)*Cp/(Cp+Cf);
For amplifier transistor T
ATFTGate source voltage Vsg be:
Vsg=Vs-Vg=VDD-[VDD+(VGL-VGH)*Cp/(Cp+Cf)]=(VGH-VGL)*Cp/(Cp+Cf);
Therefore the induction current size by line of induction Sense line is:
Ise=Ka(Vsg-|Vtha|)
2=Ka(Vsg-|Vtha|)
2=Ka[(VGH-VGL)*Cp/(Cp+Cf)-|Vtha|]
2
Vtha is the threshold voltage of amplifier transistor ATFT herein; Ka is the amplifier transistor ATFT constant relevant with design with technology.
If there is not finger touch, then the p current potential of ordering is:
Vp=VDD-(VGH-VGL);
For amplifier transistor T
ATFTGate source voltage Vsg be:
Vsg=Vs-Vg=VDD-[VDD-(VGH-VGL)]=VGH-VGL;
Induction current size by line of induction Sense line is:
Ise=Ka(Vsg-|Vtha|)
2=Ka(Vsg-|Vtha|)
2=Ka[(VGH-VGL)-|Vtha|]
2;
Can judge by electric current whether this place has finger touch thus, touch the Isense-line among the difference between current differnce Fig. 5 that causes.
This moment, the part equivalent circuit diagram of image element circuit can be as shown in Figure 8.
Simultaneously, first control module 11, driver element 12 and driving transistors DTFT all are in cut-off state
Phase III: the first sweep signal G (n) is that high level, the second sweep signal G (n+1) and led control signal EM (n) are low level, therefore, transistor seconds T2, the 4th transistor T 4, the 6th transistor T 6, the 7th transistor T 7 are in cut-off state, and the first transistor T1, the 3rd transistor T 3, the 5th transistor T 5 are in conducting state.Because the 5th transistor T 5 is opened, the 6th transistor T 6 is closed, the m point of the first capacitor C st no longer is connected with set potential, and link to each other with the grid of driving transistors DTFT, because the grid of driving transistors DTFT is in vacant state, even if therefore linked to each other (because of 3 unlatchings of the 3rd transistor T) with the first level signal VDD in n o'clock of the first capacitor C st, the voltage at the first capacitor C st two ends still can not change, for driving transistors DTFT, gate source voltage:
Vsg=Vs-Vg=Vcst=Vdata+|Vthd|-Vref;
Wherein, | Vthd| is the threshold voltage of driving transistors DTFT.
Therefore the saturation current by driving transistors DTFT is that the glow current size of Organic Light Emitting Diode OLED is:
Ioled=kd(Vsg-|Vthd|)
2=k(Vdata+|Vthd|-Vref-|Vthd|)
2=k(Vdata-Vref)
2;
Wherein, Kd is with technology and drives the relevant constant of design.
This shows only relevant with fixed voltage Vref size with data voltage Vdata to driving transistors T of drive current size
DTFTThreshold voltage | it doesn't matter for Vthd|, and this image element circuit has also overcome the influence of internal resistance to glow current simultaneously.
This moment, the part equivalent circuit diagram of image element circuit can be as shown in Figure 9.
The luminous driving of one-row pixels and the judgement of touch-control have namely been finished by the above stage.
Based on the image element circuit that the embodiment of the invention provides, the embodiment of the invention also provides a kind of organic electroluminescence display panel, and this organic electroluminescence display panel specifically can comprise the image element circuit that the invention described above embodiment provides.
The embodiment of the invention also provides a kind of display device, and this display device specifically can comprise the organic electroluminescence display panel that the invention described above embodiment provides.
This display device is specifically as follows display device such as liquid crystal panel, LCD TV, LCD, oled panel, OLED display, plasma display or Electronic Paper.
Image element circuit of the present invention, organic electroluminescence display panel and display device are particularly suitable for LTPS(low temperature polycrystalline silicon technology) GOA circuit requirements under the processing procedure, also applicable to the GOA circuit under the amorphous silicon technology.
Image element circuit provided by the invention and driving method thereof, organic electroluminescence display panel and display device by directly data voltage Vdata being input to the grid of driving transistors DTFT, make driving transistors DTFT grid potential fix, and utilize first capacitor C simultaneously
STSelf discharge the threshold voltage vt hd of driving transistors DTFT is kept at first capacitor C
STIn, first capacitor C
STAn electrode in introduce set potential (for example fixed voltage Vref) to eliminate the circuit internal resistance to the influence of glow current, thereby make the OLED drive current unanimity at diverse location place in the organic electroluminescence display panel, can improve homogeneity and the reliability of organic electroluminescence display panel brightness.
Simultaneously, also be provided with the touch signal circuit for detecting in the image element circuit provided by the invention, control signal in the AMOLED light emission drive circuit that this touch circuit for detecting is multiplexing, the coupling capacitance that touches in the circuit for detecting is charged, and utilize amplifier tube transistor (Amplify TFT, being ATFT) touch signal that touch screen is produced amplifies, when not increasing circuit structure and Operating Complexity, realized that well the touch circuit is integrated on panel, thereby can realize that internally-arranged type touch-screen and Organic Light Emitting Diode drive show integrated, be conducive to reduce thickness and the weight of display panel, and can reduce the cost of display panel.
In addition, image element circuit provided by the invention can also be provided with for eliminating Organic Light Emitting Diode OLED luminescent layer the 4th transistor T 4 of compound charge carrier not at the interface, when opening, first sweep trace make the anode of Organic Light Emitting Diode OLED be shorted to for example VSS of the second level input end, thereby can eliminate the not compound charge carrier of Organic Light Emitting Diode OLED internal illumination bed interface accumulation, reduce Organic Light Emitting Diode OLED because the built in field of the formation of electric charge accumulation delays the aging of Organic Light Emitting Diode OLED.
Be pointed out that the image element circuit that the embodiment of the invention provides is applicable to the thin film transistor (TFT) of technologies such as amorphous silicon, polysilicon, oxide.Simultaneously, although in above-described embodiment, be that example is illustrated with single employing P type thin film transistor (TFT), yet foregoing circuit can also adopt single N-type thin film transistor (TFT) or CMOS pipe circuit easily instead; In addition, touch controllable function partly can also be removed, change this driving touch-control circuit into pure pixel light emission drive circuit.And, although be that example is illustrated with the active matrix organic light-emitting diode in above-described embodiment, yet the invention is not restricted to use the display device of active matrix organic light-emitting diode, also can be applied to use the display device of other various light emitting diodes.
The above only is embodiments of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (17)
1. an image element circuit is characterized in that, comprising: driving transistors, first electric capacity, Organic Light Emitting Diode, first control module and driver element; Wherein:
The drain electrode of described driving transistors is connected with the anode of described Organic Light Emitting Diode;
The negative electrode of described Organic Light Emitting Diode is connected with the second level signal input end;
Described first control module is connected with the first sweep signal input end, data line, fixed voltage input end, described first electric capacity, described driving transistors, described driver element respectively, be used under the control of first sweep signal, be fixed voltage with the control of Electric potentials of described first electric capacity, first end, data voltage is inputed to the grid of described driving transistors, utilize first electric capacity to make the current potential of electric capacity second end of winning remain data voltage and drive transistor threshold voltage sum by the self discharge of driving transistors;
Described driver element is connected with led control signal input end, the first level signal input end, described first electric capacity, described driving transistors, described first control module respectively, be used under led control signal control, utilize the pressure reduction at the described first electric capacity two ends as the gate source voltage of driving transistors, it is luminous to drive Organic Light Emitting Diode.
2. image element circuit as claimed in claim 1 is characterized in that, described first control module comprises:
The 6th transistor and the 7th transistor; Wherein:
The described the 6th transistorized source electrode is connected with described fixed voltage input end, the described the 6th transistorized grid is connected with the described first sweep signal input end, and described the 6th transistor drain is connected in node m with described first electric capacity, first end, driver element respectively;
The 7th transistorized source electrode is connected with described data line, and the described the 7th transistorized grid is connected with the described first sweep signal input end, and described the 7th transistor drain is connected in node g with described drive transistor gate, described driver element respectively.
3. image element circuit as claimed in claim 2 is characterized in that, described driver element comprises:
The 3rd transistor and the 5th transistor; Wherein:
The described the 3rd transistorized source electrode is connected with the described first level signal input end, the described the 3rd transistorized grid is connected with described led control signal input end, and described the 3rd transistor drain is connected in node n with the source electrode of described first electric capacity, second end, driving transistors respectively;
The described the 5th transistorized source electrode is connected with described node g, and the described the 5th transistorized grid is connected with described led control signal input end, and described the 5th transistor drain is connected with described node m.
4. image element circuit as claimed in claim 1 is characterized in that, also comprises:
Be used for to eliminate described Organic Light Emitting Diode luminescent layer the 4th transistor of compound charge carrier not at the interface;
Described the 4th transistor drain is connected with the described second level signal input end, and the described the 4th transistorized grid is connected with the described first sweep signal input end, and the described the 4th transistorized source electrode is connected with the anode of described Organic Light Emitting Diode.
5. image element circuit as claimed in claim 1 is characterized in that, also comprises: induction electrode, amplifier transistor, second electric capacity, charhing unit and second control module; Wherein:
Described induction electrode is connected in node p with the grid of described charhing unit, second electric capacity, first end, amplifier transistor respectively;
The source electrode of described amplifier transistor is connected with the described first level input end, and described second control module of the drain electrode of described amplifier transistor connects;
Second end of described second electric capacity is connected with the second sweep signal input end;
Described charhing unit is connected with the first sweep signal input end, the first level input end and described node p respectively, is used under the control of first sweep signal, is described second electric capacity charging;
Described second control module is connected with the drain electrode of the described second sweep signal input end, the line of induction, described amplifier transistor respectively, be used under described second sweep signal control, the touch signal that induction electrode is sensed amplifies by amplifier transistor, and amplifier transistor amplifying signal electric current is transferred to chip by second control module is touched determining whether.
6. image element circuit as claimed in claim 5 is characterized in that, described charhing unit comprises:
Transistor seconds;
The source electrode of described transistor seconds is connected with the described first level signal input end, and the grid of described transistor seconds is connected with the described first sweep signal input end, and the drain electrode of described transistor seconds is connected with described node p.
7. image element circuit as claimed in claim 5 is characterized in that, described second control module comprises:
The first transistor;
The source electrode of described the first transistor is connected with the drain electrode of described amplifier transistor, the grid of described the first transistor and the described second sweep signal input end, and the drain electrode of described the first transistor is connected with the described line of induction.
8. as each described image element circuit of claim 2-7, it is characterized in that the transistor that comprises in the described image element circuit is the P transistor npn npn;
The described first level signal input end is connected with high level;
The described second level signal input end is connected with low level.
9. a driving is characterized in that as the image element driving method of claim 1 to 7 image element circuit as described in each, comprising:
Phase one, first control module is fixed voltage with the control of Electric potentials of first electric capacity, first end, data voltage is inputed to the grid of driving transistors, utilize first electric capacity to make the current potential of electric capacity second end of winning be data voltage and drive transistor threshold voltage sum by the self discharge of driving transistors, driver element is in cut-off state;
Subordinate phase, first control module, driver element and driving transistors all are in cut-off state;
Phase III, first control module and driving transistors are in cut-off state, and driver element utilizes the pressure reduction at the first electric capacity two ends as the gate source voltage of driving transistors under led control signal control, and it is luminous to drive Organic Light Emitting Diode.
10. method as claimed in claim 9 is characterized in that, in the phase one, the 6th transistor, the 7th transistor are in conducting state, and the 3rd transistor, the 5th transistor are in cut-off state;
In subordinate phase, the 3rd transistor, the 5th transistor, the 6th transistor, the 7th transistor all are in cut-off state;
In the phase III, the 3rd transistor, the 5th transistor are in conducting state, and the 6th transistor, the 7th transistor are in cut-off state.
11. method as claimed in claim 9 is characterized in that, in the phase one, the 4th transistor is in conducting state;
In subordinate phase, the 4th transistor is in cut-off state;
In the phase III, the 4th transistor is in cut-off state.
12. method as claimed in claim 10 is characterized in that, in the phase one, first sweep signal is low level, and led control signal is high level;
In subordinate phase, first sweep signal is high level, and led control signal is high level;
In the phase III, first sweep signal is high level, and led control signal is low level.
13. method as claimed in claim 9 is characterized in that, also comprises:
Phase one, it is the charging of second electric capacity that charhing unit utilizes first level signal, and amplifier transistor and second control module are in cut-off state;
Subordinate phase and phase III, charhing unit is in cut-off state, and the touch signal current delivery that second control module amplifies amplifier transistor is to the line of induction.
14. method as claimed in claim 13 is characterized in that, in the phase one, transistor seconds is in conducting state, and the first transistor is in cut-off state;
In subordinate phase, transistor seconds is in cut-off state, the first transistor is in conducting state;
In the phase III, transistor seconds is in cut-off state, the first transistor is in conducting state.
15. method as claimed in claim 14 is characterized in that, in the phase one, first sweep signal is low level, and second sweep signal is high level;
In subordinate phase, first sweep signal is high level, and second sweep signal is low level;
In the phase III, first sweep signal is high level, and second sweep signal is low level.
16. an organic electroluminescence display panel is characterized in that, comprises each image element circuit of described claim 1-8.
17. a display device is characterized in that, comprises organic electroluminescence display panel as claimed in claim 16.
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015196700A1 (en) * | 2014-06-23 | 2015-12-30 | 京东方科技集团股份有限公司 | Organic light-emitting diode pixel circuit and driving method therefor |
WO2017067299A1 (en) * | 2015-10-22 | 2017-04-27 | Boe Technology Group Co., Ltd. | Pixel driving circuit, display apparatus and driving method thereof |
WO2017071514A1 (en) * | 2015-10-30 | 2017-05-04 | 京东方科技集团股份有限公司 | Display substrate, driving method therefor, and display device |
CN107424568A (en) * | 2017-09-29 | 2017-12-01 | 成都晶砂科技有限公司 | Display device and compensation device, method comprising light-emitting diode pixel |
US9984272B2 (en) | 2014-09-26 | 2018-05-29 | Boe Technology Group Co., Ltd. | Pixel circuit, its driving method, light-emitting diode display panel, and display device |
CN110176203A (en) * | 2018-05-09 | 2019-08-27 | 京东方科技集团股份有限公司 | Array substrate and display device |
CN112527153A (en) * | 2020-07-16 | 2021-03-19 | 友达光电股份有限公司 | Pixel circuit for touch sensing and light sensing |
CN113539183A (en) * | 2020-04-21 | 2021-10-22 | 三星显示有限公司 | display device |
US11367389B2 (en) * | 2017-11-29 | 2022-06-21 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Pixel circuit and method for driving the same, display panel and display apparatus |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1734532A (en) * | 2004-05-20 | 2006-02-15 | 三星电子株式会社 | Display and driving method thereof |
CN101726890A (en) * | 2008-10-28 | 2010-06-09 | 瀚宇彩晶股份有限公司 | Embedded capacitive sensing input display device |
US7978156B2 (en) * | 2005-08-22 | 2011-07-12 | Samsung Mobile Display Co., Ltd. | Pixel circuit of organic electroluminescent display device and method of driving the same |
CN102930822A (en) * | 2012-11-12 | 2013-02-13 | 京东方科技集团股份有限公司 | Pixel circuit and display device and driving method of pixel circuit |
CN203300190U (en) * | 2013-06-21 | 2013-11-20 | 京东方科技集团股份有限公司 | Pixel circuit, organic light-emitting display panel and display device |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1523562A (en) * | 2003-02-18 | 2004-08-25 | 胜园科技股份有限公司 | Method and device for homogenizing image of active organic light emitting diode display |
GB0318613D0 (en) * | 2003-08-08 | 2003-09-10 | Koninkl Philips Electronics Nv | Electroluminescent display devices |
KR100592636B1 (en) * | 2004-10-08 | 2006-06-26 | 삼성에스디아이 주식회사 | LED display device |
KR101194861B1 (en) * | 2006-06-01 | 2012-10-26 | 엘지디스플레이 주식회사 | Organic light emitting diode display |
CN101136178B (en) * | 2006-09-01 | 2011-02-16 | 奇美电子股份有限公司 | Image display system |
KR100873074B1 (en) * | 2007-03-02 | 2008-12-09 | 삼성모바일디스플레이주식회사 | Pixel and organic light emitting display device using same and driving method thereof |
JP2008233129A (en) * | 2007-03-16 | 2008-10-02 | Sony Corp | Pixel circuit, display device and driving method of pixel circuit |
KR100893482B1 (en) * | 2007-08-23 | 2009-04-17 | 삼성모바일디스플레이주식회사 | Organic light emitting display device and driving method thereof |
TWI547845B (en) * | 2009-07-02 | 2016-09-01 | 半導體能源研究所股份有限公司 | Touch panel and driving method thereof |
CN101996579A (en) * | 2010-10-26 | 2011-03-30 | 华南理工大学 | Pixel driving circuit and method of active organic electroluminescent display |
CN102222468A (en) * | 2011-06-23 | 2011-10-19 | 华南理工大学 | Alternating-current pixel driving circuit and method for active organic light-emitting diode (OLED) display |
CN102651195B (en) * | 2011-09-14 | 2014-08-27 | 京东方科技集团股份有限公司 | OLED (Organic Light Emitting Diode) pixel structure for compensating light emitting nonuniformity and driving method |
CN102651198B (en) * | 2012-03-19 | 2015-04-01 | 京东方科技集团股份有限公司 | AMOLED (Active Matrix/Organic Light Emitting Diode) driving circuit, method and AMOLED display |
TWI462080B (en) * | 2012-08-14 | 2014-11-21 | Au Optronics Corp | Active matrix organic light emitting diode circuit and operating method of the same |
CN103021331B (en) * | 2012-11-30 | 2016-02-24 | 北京京东方光电科技有限公司 | A kind of pixel-driving circuit and driving method, array base palte and display device |
-
2013
- 2013-06-21 CN CN201310250040.7A patent/CN103325339B/en active Active
- 2013-08-05 WO PCT/CN2013/080794 patent/WO2014201755A1/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1734532A (en) * | 2004-05-20 | 2006-02-15 | 三星电子株式会社 | Display and driving method thereof |
US7978156B2 (en) * | 2005-08-22 | 2011-07-12 | Samsung Mobile Display Co., Ltd. | Pixel circuit of organic electroluminescent display device and method of driving the same |
CN101726890A (en) * | 2008-10-28 | 2010-06-09 | 瀚宇彩晶股份有限公司 | Embedded capacitive sensing input display device |
CN102930822A (en) * | 2012-11-12 | 2013-02-13 | 京东方科技集团股份有限公司 | Pixel circuit and display device and driving method of pixel circuit |
CN203300190U (en) * | 2013-06-21 | 2013-11-20 | 京东方科技集团股份有限公司 | Pixel circuit, organic light-emitting display panel and display device |
Non-Patent Citations (2)
Title |
---|
周雷: "AMOLED像素电路设计", 《百度文库》 * |
周雷: "AMOLED像素电路设计", 《百度文库》, 10 May 2011 (2011-05-10), pages 1 - 2 * |
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