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CN103268056A - Flexible mask plate and preparation method thereof - Google Patents

Flexible mask plate and preparation method thereof Download PDF

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Publication number
CN103268056A
CN103268056A CN2013101699057A CN201310169905A CN103268056A CN 103268056 A CN103268056 A CN 103268056A CN 2013101699057 A CN2013101699057 A CN 2013101699057A CN 201310169905 A CN201310169905 A CN 201310169905A CN 103268056 A CN103268056 A CN 103268056A
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layer
flexible
pattern structure
substrate
metal
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叶向东
蔡安江
阮小光
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Xian University of Architecture and Technology
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Xian University of Architecture and Technology
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Abstract

本发明公开一种柔性掩膜板,包括柔性基板,柔性基板上方依次设有粘结层、金属图形结构层和柔性封装层;柔性基板采用透明性柔性材料制成;柔性基板的材质为聚碳酸酯或聚二甲基硅氧烷;粘结层的材质为环氧树脂胶粘剂;金属图形结构层的材质为铝或铜;柔性封装层的材质为聚二甲基硅氧烷。本发明提供一种柔性掩膜板及其制备方法,该柔性掩膜板能够对曲面基底进行光刻加工,而且其可以自然吸附到基底上实现紧密接触,不需要进行传统的抽真空处理,这使得本发明的柔性掩膜板适宜于进行大面积基底的光刻加工。

Figure 201310169905

The invention discloses a flexible mask plate, which comprises a flexible substrate, and an adhesive layer, a metal pattern structure layer and a flexible packaging layer are sequentially arranged on the top of the flexible substrate; the flexible substrate is made of a transparent flexible material; the material of the flexible substrate is polycarbonate ester or polydimethylsiloxane; the bonding layer is made of epoxy resin adhesive; the metal graphic structure layer is made of aluminum or copper; the flexible packaging layer is made of polydimethylsiloxane. The invention provides a flexible mask and a preparation method thereof. The flexible mask can be photolithographically processed on a curved substrate, and can be naturally adsorbed onto the substrate to achieve close contact without traditional vacuum treatment. This makes the flexible mask plate of the present invention suitable for photolithographic processing of large-area substrates.

Figure 201310169905

Description

柔性掩膜板及其制备方法Flexible mask plate and preparation method thereof

【技术领域】【Technical field】

本发明属于电子产品及其微纳米制造技术领域,特别涉及一种柔性掩膜板及其制备方法。The invention belongs to the technical field of electronic products and micro-nano manufacturing thereof, and in particular relates to a flexible mask plate and a preparation method thereof.

【背景技术】【Background technique】

目前,光学光刻技术已经在微电子制造领域得到了广泛的应用。光学光刻所采用的掩膜板通常是玻璃基板加上金属铬镀层构成的,由于玻璃基板硬度较大、缺乏柔性,因而光学光刻技术只能适用于平面基底的光刻加工,无法对曲面基底进行光刻加工。另外为了保证硬质掩膜板同平面基底的紧密接触,还需要对硬质掩膜板和平面基底进行抽真空处理,因此光刻技术也不适宜于进行大面积基底的光刻加工。At present, optical lithography technology has been widely used in the field of microelectronics manufacturing. The mask plate used in optical lithography is usually composed of a glass substrate and a metal chrome coating. Due to the high hardness and lack of flexibility of the glass substrate, optical lithography technology can only be applied to the lithography process of flat substrates, and cannot be used for curved surfaces. The substrate is photolithographically processed. In addition, in order to ensure the close contact between the hard mask plate and the planar substrate, it is necessary to vacuumize the hard mask plate and the planar substrate, so photolithography technology is not suitable for photolithography processing of large-area substrates.

【发明内容】【Content of invention】

本发明的目的在于提供一种柔性掩膜板及其制备方法,以解决上述技术问题;其基板采用透明的柔性材料,然后利用粘结或转移工艺将图形化的金属结构层固定到柔性基板上,从而形成柔性掩膜板。The purpose of the present invention is to provide a flexible mask and its preparation method to solve the above technical problems; the substrate is made of a transparent flexible material, and then the patterned metal structure layer is fixed to the flexible substrate by bonding or transfer process , thus forming a flexible mask.

为了实现上述目的,本发明采取如下的技术方案:In order to achieve the above object, the present invention takes the following technical solutions:

一种柔性掩膜板,包括柔性基板,柔性基板上方依次设有粘结层、金属图形结构层和柔性封装层。A flexible mask plate includes a flexible substrate, and an adhesive layer, a metal pattern structure layer and a flexible packaging layer are sequentially arranged on the flexible substrate.

本发明进一步的改进在于:所述金属图形结构层和柔性封装层之间设有一层媒介层。The further improvement of the present invention is that: a medium layer is provided between the metal pattern structure layer and the flexible packaging layer.

本发明进一步的改进在于:柔性基板采用透明性柔性材料制成。The further improvement of the present invention lies in that: the flexible substrate is made of transparent flexible material.

本发明进一步的改进在于:柔性基板的材质为聚碳酸酯或聚二甲基硅氧烷;粘结层的材质为环氧树脂胶粘剂;金属图形结构层的材质为铝或铜;柔性封装层的材质为聚二甲基硅氧烷。The further improvement of the present invention is that: the material of the flexible substrate is polycarbonate or polydimethylsiloxane; the material of the adhesive layer is epoxy resin adhesive; the material of the metal graphic structure layer is aluminum or copper; the material of the flexible packaging layer The material is polydimethylsiloxane.

本发明进一步的改进在于:媒介层的材质为聚甲基丙烯酸甲酯。The further improvement of the present invention lies in that: the medium layer is made of polymethyl methacrylate.

柔性掩膜板的制备方法,包括以下步骤:The preparation method of flexible mask plate comprises the following steps:

(1)采用离心铺胶、喷胶或丝网印刷方法将液态的光刻胶材料涂敷到硅片基底的二氧化硅绝缘层表面上,并在二氧化硅绝缘层表面上均匀分布;(1) Apply the liquid photoresist material to the surface of the silicon dioxide insulating layer on the silicon wafer substrate by centrifugal glue laying, glue spraying or screen printing, and evenly distribute it on the surface of the silicon dioxide insulating layer;

(2)采用光刻或压印工艺,对硅片基底上的光刻胶进行图形化加工,形成光刻胶图形结构;(2) Patterning the photoresist on the silicon wafer substrate by photolithography or embossing to form a photoresist pattern structure;

(3)采用物理汽相淀积方法,在光刻胶图形结构上淀积一层金属材料,然后采用剥离法剥离光刻胶图形结构,在硅片基底的二氧化硅绝缘层表面形成金属图形结构层;(3) Deposit a layer of metal material on the photoresist pattern structure by physical vapor deposition method, then use the stripping method to strip the photoresist pattern structure, and form a metal pattern on the surface of the silicon dioxide insulating layer on the silicon wafer base structural layer;

(4)采用离心铺胶、喷胶或丝网印刷方法将粘结层材料均匀涂敷到金属图形结构层上,在金属图形结构层上形成粘结层;(4) Applying the bonding layer material evenly to the metal pattern structure layer by centrifugal glue laying, glue spraying or screen printing method, forming a bond layer on the metal pattern structure layer;

(5)将柔性基板覆盖到粘结层上,然后去除二氧化硅层,从而得到带有金属图形结构层的柔性基板;(5) covering the flexible substrate on the adhesive layer, and then removing the silicon dioxide layer, thereby obtaining a flexible substrate with a metal graphic structure layer;

(6)在金属图形结构层上覆盖柔性封装层,完成柔性掩膜板的制作。(6) Covering the flexible encapsulation layer on the metal pattern structure layer to complete the fabrication of the flexible mask.

本发明进一步的改进在于:步骤中通过湿法刻蚀去除二氧化硅绝缘层。The further improvement of the present invention lies in that in the step, the silicon dioxide insulating layer is removed by wet etching.

柔性掩膜板的制备方法,包括以下步骤:The preparation method of flexible mask plate comprises the following steps:

(1)采用离心铺胶、喷胶或丝网印刷方法将液态的光刻胶材料涂敷到硅片基底的二氧化硅绝缘层表面上,并在二氧化硅绝缘层表面上均匀分布;(1) Apply the liquid photoresist material to the surface of the silicon dioxide insulating layer on the silicon wafer substrate by centrifugal glue laying, glue spraying or screen printing, and evenly distribute it on the surface of the silicon dioxide insulating layer;

(2)采用光刻或压印工艺,对硅片基底上的光刻胶进行图形化加工,形成光刻胶图形结构;(2) Patterning the photoresist on the silicon wafer substrate by photolithography or embossing to form a photoresist pattern structure;

(3)采用物理汽相淀积方法,在光刻胶图形结构上淀积一层金属材料,然后采用剥离法剥离光刻胶图形结构,在硅片基底的二氧化硅表面形成金属图形结构层;(3) Adopt physical vapor deposition method to deposit a layer of metal material on the photoresist pattern structure, then use the stripping method to strip the photoresist pattern structure, and form a metal pattern structure layer on the silicon dioxide surface of the silicon wafer base ;

(4)采用离心铺胶、喷胶或丝网印刷方法将媒介层材料均匀涂敷到硅片基底上的金属图形结构层表面,形成包覆金属结构的媒介层;(4) Apply the medium layer material evenly to the surface of the metal pattern structure layer on the silicon chip substrate by centrifugal glue laying, glue spraying or screen printing to form a medium layer covering the metal structure;

(5)采用离心铺胶、喷胶或丝网印刷方法将粘结层材料均匀涂敷到柔性基板上,在柔性基板上形成粘结层;(5) Uniformly apply the bonding layer material to the flexible substrate by centrifugal glue laying, glue spraying or screen printing, and form a bonding layer on the flexible substrate;

(6)去除硅片基底上的二氧化硅绝缘层,从而得到包覆金属图形结构层的媒介层;(6) removing the silicon dioxide insulating layer on the silicon chip substrate, thereby obtaining the medium layer covering the metal pattern structure layer;

(7)将媒介层转移到带有粘结层的柔性基板上,使金属图形结构层粘结在粘结层上;(7) Transfer the media layer to the flexible substrate with the bonding layer, so that the metal graphic structure layer is bonded on the bonding layer;

(8)最后,在媒介层上覆盖柔性封装层,完成柔性掩膜板的制作。(8) Finally, cover the flexible encapsulation layer on the medium layer to complete the fabrication of the flexible mask.

本发明进一步的改进在于:步骤(6)中通过湿法刻蚀去除二氧化硅绝缘层。The further improvement of the present invention lies in that: in step (6), the silicon dioxide insulating layer is removed by wet etching.

相对于现有技术,本发明具有以下有益效果:本发明提供一种柔性掩膜板及其制备方法,该柔性掩膜板能够对曲面基底进行光刻加工,而且其可以自然吸附到基底上实现紧密接触,不需要进行传统的抽真空处理,这使得本发明的柔性掩膜板适宜于进行大面积基底的光刻加工。Compared with the prior art, the present invention has the following beneficial effects: the present invention provides a flexible mask and its preparation method, the flexible mask can be used for photolithographic processing of curved substrates, and it can be naturally adsorbed onto the substrate to achieve The close contact does not require traditional vacuum treatment, which makes the flexible mask plate of the present invention suitable for photolithography processing of large-area substrates.

【附图说明】【Description of drawings】

图1为实施例1所示柔性掩膜板(四层结构)的结构分层示意图;Fig. 1 is a schematic diagram of the layered structure of the flexible mask (four-layer structure) shown in Example 1;

图2为实施例2所示柔性掩膜板(五层结构)的结构分层示意图;FIG. 2 is a schematic diagram of the layered structure of the flexible mask (five-layer structure) shown in Embodiment 2;

其中,1为柔性基板(如市售的聚碳酸酯,PC或聚二甲基硅氧烷,PDMS),2为粘结层(如市售的环氧树脂胶粘剂),3为金属结构层(如铝或铜,Al,Cu),4为柔性封装层(如市售的聚二甲基硅氧烷,PDMS),5为媒介层(如市售的聚甲基丙烯酸甲酯,PMMA)。Among them, 1 is a flexible substrate (such as commercially available polycarbonate, PC or polydimethylsiloxane, PDMS), 2 is an adhesive layer (such as a commercially available epoxy resin adhesive), and 3 is a metal structure layer ( Such as aluminum or copper, Al, Cu), 4 is a flexible packaging layer (such as commercially available polydimethylsiloxane, PDMS), and 5 is a media layer (such as commercially available polymethyl methacrylate, PMMA).

【具体实施方式】【Detailed ways】

实施例1Example 1

请参阅图1所示,本发明柔性掩膜板,包括柔性基板1,在柔性基板1上方依次设有粘结层2、金属图形结构层3和柔性封装层4。柔性基板1为透明性柔性材料构成,可以选用聚碳酸酯(PC)或聚二甲基硅氧烷(PDMS);粘结层2选用环氧树脂胶粘剂;金属图形结构层3选用铝或铜;柔性封装层4选用聚二甲基硅氧烷。Please refer to FIG. 1 , the flexible mask plate of the present invention includes a flexible substrate 1 , and an adhesive layer 2 , a metal pattern structure layer 3 and a flexible packaging layer 4 are sequentially provided on the flexible substrate 1 . The flexible substrate 1 is made of a transparent flexible material, which can be polycarbonate (PC) or polydimethylsiloxane (PDMS); the adhesive layer 2 is made of epoxy resin adhesive; the metal pattern structure layer 3 is made of aluminum or copper; The flexible encapsulation layer 4 is polydimethylsiloxane.

该四层结构的柔性掩膜板的制备方法包括下列步骤:The preparation method of the flexible mask plate of this four-layer structure comprises the following steps:

(1)采用离心铺胶、喷胶或丝网印刷方法将液态的光刻胶材料(如市售的AZ1500)涂敷到硅片基底的二氧化硅绝缘层表面上,并在二氧化硅绝缘层表面上均匀分布;(1) Apply a liquid photoresist material (such as commercially available AZ1500) to the surface of the silicon dioxide insulating layer on the silicon wafer substrate by centrifugal coating, glue spraying or screen printing, and apply it on the silicon dioxide insulating layer. Evenly distributed on the surface of the layer;

(2)采用光刻或压印工艺,对基底上的光刻胶进行图形化加工,形成光刻胶图形结构;(2) Patterning the photoresist on the substrate by photolithography or embossing to form a photoresist pattern structure;

(3)采用物理汽相淀积PVD设备及工艺,在光刻胶图形结构上淀积一层金属材料(如铝或铜,Al,Cu),然后采用剥离法剥离光刻胶图形结构,在硅片基底的二氧化硅绝缘层表面形成金属图形结构层3;(3) Deposit a layer of metal material (such as aluminum or copper, Al, Cu) on the photoresist pattern structure by using physical vapor deposition PVD equipment and technology, and then use the lift-off method to peel off the photoresist pattern structure. A metal pattern structure layer 3 is formed on the surface of the silicon dioxide insulating layer of the silicon wafer base;

(4)采用离心铺胶、喷胶或丝网印刷方法将粘结层材料(如市售的环氧树脂胶粘剂)均匀涂敷到金属图形结构层3上,在金属图形结构层3上形成粘结层2;(4) Apply the adhesive layer material (such as commercially available epoxy resin adhesive) evenly to the metal graphic structure layer 3 by centrifugal glue laying, glue spraying or screen printing, and form an adhesive layer on the metal graphic structure layer 3. junction2;

(5)将柔性基板1(如市售的聚碳酸酯,PC或聚二甲基硅氧烷,PDMS)覆盖到粘结层2上,然后湿法刻蚀去除二氧化硅绝缘层,从而得到带有金属图形结构层3的柔性基板1;(5) Cover the flexible substrate 1 (such as commercially available polycarbonate, PC or polydimethylsiloxane, PDMS) on the adhesive layer 2, and then remove the silicon dioxide insulating layer by wet etching, thereby obtaining A flexible substrate 1 with a metal pattern structure layer 3;

(6)在金属图形结构层3上覆盖柔性封装层4(如市售的聚二甲基硅氧烷,PDMS),完成柔性掩膜板的制作。(6) Cover the flexible encapsulation layer 4 (such as commercially available polydimethylsiloxane, PDMS) on the metal pattern structure layer 3 to complete the fabrication of the flexible mask.

实施例2Example 2

请参阅图1所示,本发明柔性掩膜板,包括柔性基板1,在柔性基板1上方依次设有粘结层2、金属结构层3、媒介层5和柔性封装层4。柔性基板1为透明性柔性材料构成,可以选用聚碳酸酯(PC)或聚二甲基硅氧烷(PDMS);粘结层2选用环氧树脂胶粘剂;金属图形结构层3选用铝或铜;柔性封装层4选用聚二甲基硅氧烷;媒介层5选用聚甲基丙烯酸甲酯。Please refer to FIG. 1 , the flexible mask plate of the present invention includes a flexible substrate 1 on which an adhesive layer 2 , a metal structure layer 3 , a medium layer 5 and a flexible encapsulation layer 4 are sequentially arranged. The flexible substrate 1 is made of a transparent flexible material, which can be polycarbonate (PC) or polydimethylsiloxane (PDMS); the adhesive layer 2 is made of epoxy resin adhesive; the metal pattern structure layer 3 is made of aluminum or copper; The flexible packaging layer 4 is made of polydimethylsiloxane; the medium layer 5 is made of polymethyl methacrylate.

该五层结构的柔性掩膜板的制备方法包括下列步骤:The preparation method of the flexible mask plate of this five-layer structure comprises the following steps:

(1)采用离心铺胶、喷胶或丝网印刷方法将液态的光刻胶材料(如市售的AZ1500)涂敷到硅片基底的二氧化硅绝缘层表面上,并在二氧化硅绝缘层表面上均匀分布;(1) Apply a liquid photoresist material (such as commercially available AZ1500) to the surface of the silicon dioxide insulating layer on the silicon wafer substrate by centrifugal coating, glue spraying or screen printing, and apply it on the silicon dioxide insulating layer. Evenly distributed on the surface of the layer;

(2)采用光刻或压印工艺,对基底上的光刻胶进行图形化加工,形成光刻胶图形结构;(2) Patterning the photoresist on the substrate by photolithography or embossing to form a photoresist pattern structure;

(3)采用物理汽相淀积PVD设备及工艺,在光刻胶图形结构上淀积一层金属材料(如铝或铜,Al,Cu),然后采用剥离法剥离光刻胶图形结构,在硅片基底的二氧化硅绝缘层表面形成金属图形结构层3;(3) Deposit a layer of metal material (such as aluminum or copper, Al, Cu) on the photoresist pattern structure by using physical vapor deposition PVD equipment and technology, and then use the lift-off method to peel off the photoresist pattern structure. A metal pattern structure layer 3 is formed on the surface of the silicon dioxide insulating layer of the silicon wafer base;

(4)采用离心铺胶、喷胶或丝网印刷方法将媒介层材料(如市售的聚甲基丙烯酸甲酯,PMMA)均匀涂敷到基底上的金属图形结构层3表面,形成包覆金属结构层3的媒介层5;(4) Apply the medium layer material (such as commercially available polymethyl methacrylate, PMMA) evenly to the surface of the metal pattern structure layer 3 on the substrate by centrifugal glue laying, glue spraying or screen printing to form a coating The medium layer 5 of the metal structure layer 3;

(5)采用离心铺胶、喷胶或丝网印刷方法将粘结层材料(如市售的环氧树脂胶粘剂)均匀涂敷到柔性基板1(如市售的聚碳酸酯,PC或聚二甲基硅氧烷,PDMS)上,在柔性基板1上形成粘结层2;(5) Uniformly apply the bonding layer material (such as commercially available epoxy resin adhesive) to the flexible substrate 1 (such as commercially available polycarbonate, PC or polycarbonate) by centrifugal glue laying, glue spraying or screen printing. Methylsiloxane, PDMS), forming an adhesive layer 2 on the flexible substrate 1;

(6)用湿法刻蚀,去除硅片基底上的二氧化硅绝缘层,从而得到包覆金属图形结构层3的媒介层5;(6) use wet etching to remove the silicon dioxide insulating layer on the silicon wafer substrate, thereby obtaining the intermediary layer 5 covering the metal pattern structure layer 3;

(7)将媒介层5转移到带有粘结层2的柔性基板1上,使金属图形结构层3粘结在粘结层2上;(7) transfer the medium layer 5 to the flexible substrate 1 with the adhesive layer 2, so that the metal graphic structure layer 3 is bonded on the adhesive layer 2;

(8)最后,在媒介层5上覆盖柔性封装层4(如市售的聚二甲基硅氧烷,PDMS),完成柔性掩膜板的制作。(8) Finally, the medium layer 5 is covered with a flexible encapsulation layer 4 (such as commercially available polydimethylsiloxane, PDMS), and the fabrication of the flexible mask is completed.

Claims (9)

1.一种柔性掩膜板,其特征在于,包括柔性基板(1),柔性基板(1)上方依次设有粘结层(2)、金属图形结构层(3)和柔性封装层(4)。1. A flexible mask plate, characterized in that it includes a flexible substrate (1), and an adhesive layer (2), a metal pattern structure layer (3) and a flexible packaging layer (4) are sequentially arranged above the flexible substrate (1) . 2.根据权利要求1所述的柔性掩膜板,其特征在于,所述金属图形结构层(3)和柔性封装层(4)之间设有一层媒介层(5)。2. The flexible mask according to claim 1, characterized in that, a medium layer (5) is provided between the metal pattern structure layer (3) and the flexible packaging layer (4). 3.根据权利要求1或2所述的柔性掩膜板,其特征在于,柔性基板(1)采用透明性柔性材料制成。3. The flexible mask according to claim 1 or 2, characterized in that the flexible substrate (1) is made of transparent flexible material. 4.根据权利要求3所述的柔性掩膜板,其特征在于,柔性基板(1)的材质为聚碳酸酯或聚二甲基硅氧烷;粘结层(2)的材质为环氧树脂胶粘剂;金属图形结构层(3)的材质为铝或铜;柔性封装层(4)的材质为聚二甲基硅氧烷。4. The flexible mask according to claim 3, wherein the material of the flexible substrate (1) is polycarbonate or polydimethylsiloxane; the material of the bonding layer (2) is epoxy resin Adhesive; the material of the metal pattern structure layer (3) is aluminum or copper; the material of the flexible packaging layer (4) is polydimethylsiloxane. 5.根据权利要求2所述的柔性掩膜板,其特征在于,媒介层(5)的材质为聚甲基丙烯酸甲酯。5. The flexible mask according to claim 2, characterized in that the medium layer (5) is made of polymethyl methacrylate. 6.权利要求1、3或4所述的柔性掩膜板的制备方法,其特征在于,包括以下步骤:6. The preparation method of the flexible mask plate described in claim 1, 3 or 4, is characterized in that, comprises the following steps: (1)采用离心铺胶、喷胶或丝网印刷方法将液态的光刻胶材料涂敷到硅片基底的二氧化硅绝缘层表面上,并在二氧化硅绝缘层表面上均匀分布;(1) Apply the liquid photoresist material to the surface of the silicon dioxide insulating layer on the silicon wafer substrate by centrifugal glue laying, glue spraying or screen printing, and evenly distribute it on the surface of the silicon dioxide insulating layer; (2)采用光刻或压印工艺,对硅片基底上的光刻胶进行图形化加工,形成光刻胶图形结构;(2) Patterning the photoresist on the silicon wafer substrate by photolithography or embossing to form a photoresist pattern structure; (3)采用物理汽相淀积方法,在光刻胶图形结构上淀积一层金属材料,然后采用剥离法剥离光刻胶图形结构,在硅片基底的二氧化硅绝缘层表面形成金属图形结构层(3);(3) Deposit a layer of metal material on the photoresist pattern structure by physical vapor deposition method, then use the stripping method to strip the photoresist pattern structure, and form a metal pattern on the surface of the silicon dioxide insulating layer on the silicon wafer base structure layer(3); (4)采用离心铺胶、喷胶或丝网印刷方法将粘结层材料均匀涂敷到金属图形结构层(3)上,在金属图形结构层(3)上形成粘结层(2);(4) Uniformly apply the adhesive layer material to the metal pattern structure layer (3) by centrifugal glue laying, spray glue or screen printing method, and form the bond layer (2) on the metal pattern structure layer (3); (5)将柔性基板(1)覆盖到粘结层(2)上,然后去除二氧化硅层,从而得到带有金属图形结构层(3)的柔性基板(1);(5) covering the flexible substrate (1) on the adhesive layer (2), and then removing the silicon dioxide layer, thereby obtaining a flexible substrate (1) with a metal graphic structure layer (3); (6)在金属图形结构层(3)上覆盖柔性封装层(4),完成柔性掩膜板的制作。(6) Covering the flexible encapsulation layer (4) on the metal graphic structure layer (3) to complete the fabrication of the flexible mask. 7.权利要求6所述的制备方法,其特征在于,步骤(5)中通过湿法刻蚀去除二氧化硅绝缘层。7. The preparation method according to claim 6, characterized in that in step (5), the silicon dioxide insulating layer is removed by wet etching. 8.权利要求2或5所述的柔性掩膜板的制备方法,其特征在于,包括以下步骤:8. The preparation method of the flexible mask plate described in claim 2 or 5, is characterized in that, comprises the following steps: (1)采用离心铺胶、喷胶或丝网印刷方法将液态的光刻胶材料涂敷到硅片基底的二氧化硅绝缘层表面上,并在二氧化硅绝缘层表面上均匀分布;(1) Apply the liquid photoresist material to the surface of the silicon dioxide insulating layer on the silicon wafer substrate by centrifugal glue laying, glue spraying or screen printing, and evenly distribute it on the surface of the silicon dioxide insulating layer; (2)采用光刻或压印工艺,对硅片基底上的光刻胶进行图形化加工,形成光刻胶图形结构;(2) Patterning the photoresist on the silicon wafer substrate by photolithography or embossing to form a photoresist pattern structure; (3)采用物理汽相淀积方法,在光刻胶图形结构上淀积一层金属材料,然后采用剥离法剥离光刻胶图形结构,在硅片基底的二氧化硅表面形成金属图形结构层(3);(3) Adopt physical vapor deposition method to deposit a layer of metal material on the photoresist pattern structure, then use the stripping method to strip the photoresist pattern structure, and form a metal pattern structure layer on the silicon dioxide surface of the silicon wafer base (3); (4)采用离心铺胶、喷胶或丝网印刷方法将媒介层材料均匀涂敷到硅片基底上的金属图形结构层(3)表面,形成包覆金属结构的媒介层(5);(4) Uniformly apply the medium layer material to the surface of the metal pattern structure layer (3) on the silicon chip substrate by centrifugal glue laying, glue spraying or screen printing to form a medium layer (5) covering the metal structure; (5)采用离心铺胶、喷胶或丝网印刷方法将粘结层材料均匀涂敷到柔性基板(1)上,在柔性基板(1)上形成粘结层(2);(5) Uniformly apply the bonding layer material to the flexible substrate (1) by using centrifugal glue laying, glue spraying or screen printing methods to form the bonding layer (2) on the flexible substrate (1); (6)去除硅片基底上的二氧化硅绝缘层,从而得到包覆金属图形结构层(3)的媒介层(5);(6) removing the silicon dioxide insulating layer on the silicon wafer substrate, thereby obtaining the medium layer (5) covering the metal pattern structure layer (3); (7)将媒介层(5)转移到带有粘结层(2)的柔性基板(1)上,使金属图形结构层(3)粘结在粘结层(2)上;(7) transferring the medium layer (5) to the flexible substrate (1) with the adhesive layer (2), so that the metal graphic structure layer (3) is bonded to the adhesive layer (2); (8)最后,在媒介层(5)上覆盖柔性封装层(4),完成柔性掩膜板的制作。(8) Finally, cover the flexible encapsulation layer (4) on the medium layer (5) to complete the fabrication of the flexible mask. 9.权利要求8所述的制备方法,其特征在于,步骤(6)中通过湿法刻蚀去除二氧化硅绝缘层。9 . The preparation method according to claim 8 , characterized in that, in step (6), the silicon dioxide insulating layer is removed by wet etching.
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CN105807557A (en) * 2016-05-23 2016-07-27 中国科学院光电技术研究所 High-resolution flexible composite mask plate for optical exposure and preparation method thereof
CN106784196A (en) * 2017-01-24 2017-05-31 安徽三安光电有限公司 A kind of etching mask and the method that LED is made using the etching mask
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CN109407462A (en) * 2018-10-25 2019-03-01 宁波微迅新材料科技有限公司 A kind of mask plate manufacture craft
CN110148761A (en) * 2019-05-31 2019-08-20 苏州天际创新纳米技术有限公司 The production method of fuel cell membrane electrode assembly
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Application publication date: 20130828