CN103257498B - A kind of dot structure and driving method, display device - Google Patents
A kind of dot structure and driving method, display device Download PDFInfo
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- CN103257498B CN103257498B CN201310164041.XA CN201310164041A CN103257498B CN 103257498 B CN103257498 B CN 103257498B CN 201310164041 A CN201310164041 A CN 201310164041A CN 103257498 B CN103257498 B CN 103257498B
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- 239000004973 liquid crystal related substance Substances 0.000 description 23
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136272—Auxiliary lines
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0219—Reducing feedthrough effects in active matrix panels, i.e. voltage changes on the scan electrode influencing the pixel voltage due to capacitive coupling
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Abstract
The invention discloses a kind of dot structure and driving method, display device, relate to display technique field, in order to the impact avoiding leaping voltage to produce pixel electrode voltage, improve the display effect of display device.Comprise at least one pixel cell that public electrode wire, the grid line intersected by transverse and longitudinal and data line are divided into, described pixel cell comprises thin film transistor (TFT) and pixel electrode; Described dot structure also comprises additional drive signal line.Described additional drive signal line forms the additional capacitor for compensating described dot structure endoparasitism capacitance charge; Described additional drive signal line input signal is contrary with the phase place of described grid line input signal.
Description
Technical field
The present invention relates to display technique field, particularly relate to a kind of dot structure and driving method, display device.
Background technology
Thin Film Transistor-LCD (ThinFilmTransistorLiquidCrystalDisplay, TFT-LCD) good because of its use had and environmental protection characteristic, broad application temperature range, manufacturing technology automaticity high, be easy to the advantage such as integrated, become the display product of main flow just gradually.
Multiple dot structures that TFT-LCD of the prior art is arranged by matrix form usually form, its typical unit pixel structure as shown in Figure 1, comprise grid line 11 and the data line 12 of transverse and longitudinal intersection, grid line 11 and the crossover location place of data line 12 are provided with thin film transistor (TFT) (TFT), the fabrication of this TFT is on grid line 11, source electrode 1312 is connected with data line 12, drain electrode 1311 connects pixel electrode 132, to maintain the voltage of pixel electrode 132, the public electrode wire 10 parallel with grid line 11 is also provided with in dot structure, between pixel electrode 132 and public electrode, there is memory capacitance.In this dot structure, many by the effective control adopting public electrode voltages (Vcom) to remain unchanged and namely the type of drive of row upset can realize liquid crystal display.
But a kind of like this weak point of TFT structure is, because level difference will produce stray capacitance (Cgd) between the grid of TFT and drain electrode 1311, in the moment of grid line (Gate) 11 by Control of Voltage TFT switch, due to the existence of Cgd, when TFT closes, the change from high to low of Gate voltage signal can make drain electrode 1311 export leaping voltage (Δ Vp), this Δ Vp can cause the unexpected reduction of liquid crystal voltage in pixel (Vlc), thus affect the accuracy of pixel electrode 132 voltage (Vpixel), display frame is glimmered.
Summary of the invention
Embodiments of the invention provide a kind of dot structure and driving method, display device, in order to the impact avoiding leaping voltage to produce pixel electrode voltage, improve the display effect of display device.
For achieving the above object, embodiments of the invention adopt following technical scheme:
The one side of the embodiment of the present invention, provides a kind of dot structure, comprising: at least one pixel cell that public electrode wire, the grid line intersected by transverse and longitudinal and data line define, and described pixel cell comprises thin film transistor (TFT) and pixel electrode; Described dot structure also comprises: additional drive signal line;
Described additional drive signal line forms the additional capacitor for compensating described dot structure endoparasitism capacitance charge;
Described additional drive signal line input signal is contrary with the phase place of described grid line input signal.
The another aspect of the embodiment of the present invention, provides a kind of display device, comprises dot structure described above.
The another aspect of the embodiment of the present invention, a kind of dot structure driving method is provided, described dot structure comprises: at least one pixel cell that public electrode wire, the grid line intersected by transverse and longitudinal and data line define, and described pixel cell comprises thin film transistor (TFT) and pixel electrode; Described method comprises:
Described grid line input signal, for opening described TFT line by line;
Described data line input signal, for when described TFT opens, is powered to described pixel electrode by the drain electrode of described TFT;
Additional drive signal line input signal is contrary with the phase place of described grid line input signal;
Wherein, described additional drive signal line forms the additional capacitor for compensating described dot structure endoparasitism capacitance charge.
A kind of dot structure that the embodiment of the present invention provides and driving method, display device.By adding the additional drive signal line being parallel to grid line and/or data line in dot structure, drain electrode or the pixel electrode of this additional drive signal line and TFT form electric capacity, and this additional drive signal line input signal is contrary with the phase place of grid line input signal, so, the drain electrode of additional drive signal line and TFT or pixel electrode form electric capacity electric charge can compensate the charge variation of stray capacitance, avoid the impact of leaping voltage on pixel electrode voltage, thus improve the display effect of display device.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is dot structure schematic diagram of the prior art;
A kind of dot structure schematic diagram that Fig. 2 provides for the embodiment of the present invention;
The another kind of dot structure schematic diagram that Fig. 3 provides for the embodiment of the present invention;
The another kind of dot structure schematic diagram that Fig. 4 provides for the embodiment of the present invention;
The oscillogram of a kind of drive singal that Fig. 5 provides for the embodiment of the present invention;
The another kind of drive signal waveform figure that Fig. 6 provides for the embodiment of the present invention;
The another kind of drive signal waveform figure that Fig. 7 provides for the embodiment of the present invention;
Another drive signal waveform figure that Fig. 8 provides for the embodiment of the present invention;
The another kind of dot structure schematic diagram that Fig. 9 provides for the embodiment of the present invention;
The another kind of dot structure schematic diagram that Figure 10 provides for the embodiment of the present invention;
The another kind of dot structure schematic diagram that Figure 11 provides for the embodiment of the present invention;
The another kind of dot structure schematic diagram that Figure 12 provides for the embodiment of the present invention;
Another dot structure schematic diagram that Figure 13 provides for the embodiment of the present invention;
The circuit region structural representation that Figure 14 provides for the embodiment of the present invention;
A kind of dot structure schematic diagram that Figure 15 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The embodiment of the present invention provides a kind of dot structure, as shown in Figure 2, comprising:
At least one pixel cell 13 that public electrode wire 10, the grid line 11 intersected by transverse and longitudinal and data line 12 define, pixel cell 13 comprises again TFT131 and pixel electrode 132, and in addition, dot structure can also comprise: additional drive signal line 14.
Additional drive signal line 14 forms the additional capacitor for compensating described dot structure endoparasitism capacitance charge.
Additional drive signal line 14 input signal is contrary with the phase place of grid line 11 input signal.
Concrete, this additional capacitor can comprise: the first electric capacity 21 that additional drive signal line 14 is formed with the drain electrode 1311 of thin film transistor (TFT), or the second electric capacity 22 that additional drive signal line 14 is formed with pixel electrode.As shown in Figure 2, additional drive signal line 14 can form the first electric capacity 21 with the drain electrode 1311 of TFT131.Or the dot structure that the embodiment of the present invention provides can also as shown in Figure 3 or Figure 4, and additional drive signal line 14 and pixel electrode 132 form the second electric capacity 22.Certainly, the dot structure of above formation first electric capacity 21 and/or the second electric capacity 22 also only illustrates, other dot structure designs that can form the first electric capacity 21 and/or the second electric capacity 22 do not enumerate at this, but all should include protection scope of the present invention in.In a kind of like this dot structure of structure, additional drive signal line 14 and the drain electrode 1311 of TFT131 formed the first electric capacity 21 and additional drive signal line 14 and pixel electrode 132 form the second electric capacity 22 electric charge just can compensate the charge variation of stray capacitance, namely the charge variation realizing additional signal lines 14 pairs of stray capacitances compensates, avoid the impact of leaping voltage on pixel electrode voltage, thus improve the display effect of display device.
A kind of dot structure that the embodiment of the present invention provides, by adding the additional drive signal line being parallel to grid line and/or data line in dot structure, the drain electrode of this additional drive signal line and TFT forms electric capacity, and this additional drive signal line input signal is contrary with the phase place of grid line input signal, so, the drain electrode of additional drive signal line and TFT form electric capacity electric charge can compensate the charge variation of stray capacitance, avoid the impact of leaping voltage on pixel electrode voltage, thus improve the display effect of display device.
It should be noted that, with ADS (Advanced-SuperDimensionalSwitching in embodiments of the present invention, referred to as ADS, senior super dimension field switch) liquid crystal indicator of pattern is the explanation that example is carried out, the longitudinal electric field that the parallel electric field that ADS technology is produced by pixel electrode edge in same plane and pixel electrode layer and public electrode interlayer produce forms multi-dimensional electric field, to make in liquid crystal cell between pixel electrode, directly over electrode, all aligned liquid-crystal molecules can both produce and rotate conversion, thus improve planar orientation system liquid crystal work efficiency and increase light transmission efficiency.Wherein, array base palte comprises the first electrode (not shown in Fig. 2) be connected with public electrode wire 10 and the second electrode be connected with the drain electrode of TFT, and in dot structure as shown in Figure 2, this second electrode can be pixel electrode 132.Additional drive signal line 14 can arrange with layer with pixel electrode 132 but not be connected, the two makes material can be identical, because the second electrode is in different levels from source and drain metal level, namely additional drive signal line 14 can form the first electric capacity 21 with the drain electrode 1311 of TFT131.Adopt a kind of like this dot structure of structure, namely can produce additional drive signal line 14 without the need to increasing new production process, thus reduce the production difficulty of product.Certain embodiment of the present invention is not limited to the liquid crystal indicator of ADS pattern, in the liquid crystal indicator of other structures, can adopt a kind of like this design of additional drive signal line equally, not enumerate at this.
In the middle of the present embodiment, the waveform of additional drive signal line 14 input signal and the waveform of grid line 11 input signal can be as shown in Figure 5, wherein, the waveform of additional drive signal line 14 input signal Va is identical with the wave period of grid line 11 input signal Vg, and saltus step direction is contrary.Concrete, as grid line 11 high input voltage signal Vgh, additional drive signal line 14 correspondingly inputs low voltage signal Val; When grid line 11 inputs low voltage signal Vgl, additional drive signal line 14 is high input voltage signal Vah correspondingly.
Further, as shown in Figure 2, additional drive signal line 14 input signal can also be used for the voltage compensating described pixel electrode 132, to make the absolute value of difference between the voltage of pixel electrode 132 and the voltage of public electrode wire 10 input signal within the scope of pre-set interval.
It should be noted that, from pixel charging process of the prior art, specifically as shown in Figure 6, a frame period (1Frameperiod) in the time, after grid line (gate) 11 signal high voltage passes into, TFT switch opens, namely data line (data) 12 electric current passes in pixel electrode 14, after charging complete, grid line (gate) 11 signal becomes low-voltage, and TFT switch cuts out, pixel electrode 14 charging complete.But before starting to next pixel charging, also there is the regular hour, and during this period of time, due to the existence of the leakage current that many reasons causes, cause the voltage (Vpixel) of pixel electrode 14 in this frame period and the difference of public electrode wire 10 voltage (Vcom), namely | Vpixel-Vcom| can reduce gradually, and therefore grey scale pixel value also can change thereupon, the gray-scale value of original setting can not be maintained, thus cause pixel display effect to reduce.
In embodiments of the present invention, additional drive signal line 14 input signal specifically refers to for the voltage compensating described pixel electrode 132: as shown in Figure 6, in positive period (positiveframe), voltage (Vpixel) due to pixel electrode 132 is greater than the voltage (Vcom) of public electrode wire 10, upwards draw high as Va2 by the voltage Va1 that additional drive signal line 14 is inputted, the voltage (Vpixel) of corresponding pixel electrode 132 also can upwards draw high, thus realize | Vpixel-Vcom| does not reduce, in negative cycle (Negativeframe), voltage (Vpixel) due to pixel electrode 132 is less than the voltage (Vcom) of public electrode wire 10, drop-down by the voltage Va1 that inputted by additional drive signal line 14 is reciprocal Va2, the voltage (Vpixel) of corresponding pixel electrode 132 also can be subject to drop-down, thus realize | Vpixel-Vcom| does not reduce.
Further, additional drive signal line input signal, for compensating the voltage of described pixel electrode, can make the absolute value of difference between pixel electrode 132 voltage and public electrode wire 10 voltage within the scope of a pre-set interval.Concrete, pre-set interval can be the scope chosen according to actual needs.Such as, within as shown in Figure 7 positive period, the voltage Vcom inputted due to public electrode wire 10 is constant, through the voltage of the pixel electrode 132 of single compensation between V1 and V2, therefore between the voltage Vcom that inputs of the voltage of pixel electrode 132 and described public electrode wire 10, the absolute value of difference is in pre-set interval | within V1-V2|.
Or, further, the absolute value of difference between the voltage (Vcom) that the voltage (Vpixel) of pixel electrode 132 and public electrode wire 10 input | the pre-set interval residing for Vpixel-Vcom| can also be a concrete value.As shown in Figure 8, repeatedly adjust the signal Va inputted by additional drive signal line 14 and real-Time Compensation is carried out to the voltage of pixel electrode 132, the voltage of pixel electrode 132 is made to be tending towards a fixing numerical value Vpq, the voltage Vcom inputted due to public electrode wire 10 is constant, therefore can ensure the absolute value of difference between the voltage Vcom that the voltage Vpixel of pixel electrode 132 and public electrode wire 10 input | and Vpixel-Vcom| is | Vpq-Vcom|.
It should be noted that, additional drive signal line 14 can be parallel with grid line 11; Or additional drive signal line 14 can also be parallel with data line 12.
Concrete, in dot structure as shown in Figure 2, be for additional drive signal line 14 explanation carried out parallel with grid line 11; In dot structure as shown in Figure 4, be for additional drive signal line 14 explanation carried out parallel with data line 12.Or as shown in Figure 9, in the dot structure that the embodiment of the present invention provides, can also can add the additional drive signal line 41 parallel with grid line 11 and the additional drive signal line 42 parallel with data line 12 simultaneously.
It should be noted that, in dot structure as shown in Figure 4, the part that additional drive signal line 14 and pixel electrode 132 form the second electric capacity 22 is formed with layer with data line 12, the two material is identical and do not connect mutually, and the remainder of additional drive signal line 14 is then electrically connected by the material of pixel electrode 132 with layer.In dot structure as shown in Figure 9, the structure of additional drive signal line 41,42 can with reference to the structure of respective drive signal line in Fig. 2 and Fig. 4.
Further, when additional drive signal line 14 is parallel with grid line 11, additional drive signal line 14 and grid line 11 can be that same layer metal material is formed; Or additional drive signal line 14 and grid line 11 can also be arranged by different layer.
Further, when additional drive signal line 14 is parallel with data line 12, additional drive signal line 14 and data line 12 can be that same layer metal material is formed; Or additional drive signal line 14 and data line 12 can also be arranged by different layer.
Concrete, as shown in Figure 10, additional drive signal line 14 is parallel with grid line 11 and adopt same metal material to process at same layer.Such as, when being formed after metallic diaphragm on the surface of substrate, the mask plate with corresponding exposure area can be adopted to form the pattern of additional drive signal line 14 and grid line 11 by patterning processes.So, can production process be simplified, effectively save production cost, reduced production difficulty.
Or additional drive signal line 14 can also adopt different materials from grid line 11, different aspects processes.
Further, additional drive signal line 14 can comprise the first sub-additional drive signal line 141 and the second sub-additional drive signal line 142.
First sub-additional drive signal line 141 can be parallel with grid line 11 or data line 12, and this first sub-additional drive signal line 141 is positioned at outside the region of grid line 11 or data line 12.In dot structure as shown in figure 11, be parallel with grid line 11 for the first sub-additional drive signal line 141 and be positioned at the explanation carried out outside grid line 11 region.Can see, when the first sub-additional drive signal line 141 is parallel with grid line 11 and when being positioned at outside grid line 11 region, drain electrode 1311 with TFT131 is formed overlapping region by a part of region of the first sub-additional drive signal line 141, and this overlapping region is the first electric capacity 21.
Second sub-additional drive signal line 142 is positioned at grid line 11 or data line 12 region.
It should be noted that, when the second sub-additional drive signal line 142 is positioned at grid line 11 or data line 12 region and grid line 11 or data line 12 different layers arrange.
In dot structure as shown in figure 11, when additional drive signal line 14 is arranged with the different layer of grid line 11, the first sub-additional drive signal line 141 is parallel with grid line 11 and be positioned at outside grid line 11 region, and the second sub-additional drive signal line 142 is positioned at the region of grid line 11.Wherein, additional drive signal line 14 can be arranged with layer with pixel electrode 132 (not shown in Figure 11).A kind of like this additional drive signal line 14 of meander line structure is adopted to design, because the second sub-additional drive signal line 142 is positioned at grid line 11 or data line 12 region, therefore this second sub-additional drive signal line 142 is without the need to taking the territory, effective display area in pixel cell 13, thus improves the aperture opening ratio of display device.
Further, the drain electrode 1311 of TFT131 can also be electrically connected with extension electrode 30, and wherein, as shown in figure 11, extension electrode is the region that the drain electrode 1311 of TFT131 extends mutually along drive signal line 14 direction, and extension electrode 30 is electrically connected with the drain electrode of TFT13.Drain electrode 1311 and the extension electrode 30 of additional drive signal line 14 and described TFT131 form the first electric capacity 21.So, by this electric connection mode, increase the area of the upper and lower substrate of the first electric capacity 21, improve the storage capacity of the first electric capacity 21, the ability to bring along of additional drive signal line 14 pairs of pixel electrode 132 voltages is increased, and reduces driving voltage.
It should be noted that, in process, those skilled in the art can according to specifically requiring to the difference of the storage capacity of aperture opening ratio and stray capacitance the length regulating extension electrode 30.
Again such as, in dot structure as shown in figure 12, when additional drive signal line 14 is arranged with layer with grid line 11, additional drive signal line 14 can comprise: the first sub-additional drive signal line 141 and the second sub-additional drive signal line 142, in dot structure as shown in figure 12, be parallel with grid line 11 with the first sub-additional drive signal line 141 equally and be positioned at outside grid line 11 region, the region that the second sub-additional drive signal line 142 is positioned at grid line 11 is the explanation that example is carried out.Wherein, the first sub-additional drive signal line 141 will form overlapping region with pixel electrode 132, and this overlapping region is the second electric capacity 22.Wherein, the first sub-additional drive signal line 141 can be arranged with layer with grid line 11, and finally can draw additional drive signal line from along grid line direction.In addition or as shown in figure 13, when additional drive signal line 14 is parallel with data line 12, additional drive signal line 14 can comprise: the first sub-additional drive signal line 141 and the second sub-additional drive signal line 142, in dot structure as shown in fig. 13 that, be parallel with data line 12 with the first sub-additional drive signal line 141 and be positioned at outside data line 12 region, the region that the second sub-additional drive signal line 142 is positioned at data line 12 is the explanation that example is carried out.Wherein, the first sub-additional drive signal line 141 will form overlapping region with pixel electrode 132, and this overlapping region is the second electric capacity 22.Wherein, the first sub-additional drive signal line 141 can be arranged with layer with data line 12, and finally can draw additional drive signal line from along data line direction.In the additional drive signal line 14 of above several meander line structure designs, because the second sub-additional drive signal line 142 is positioned at grid line or data line region, therefore this second sub-additional drive signal line 142 is without the need to taking the territory, effective display area in pixel cell, thus improves the aperture opening ratio of display device.Certainly, the additional drive signal line 14 of above several meander line structure designs and also only illustrates, other additional drive signal line designs with meander line structure do not enumerate at this, but all should include protection scope of the present invention in.
It should be noted that, as shown in figure 14, the dot structure that the embodiment of the present invention provides also comprises at least one group of parallel lead areas, and each group lead areas 10 comprises the first port 101 and the second port one 02.
Wherein, the signal that the first port 101 inputs for introducing additional drive signal line 14, the second port one 02 is for introducing the signal of grid line 11 or data line 12 input.
Wherein, the first circuit region 50 be electrically connected with the first port 101 is also comprised, for driving additional drive signal line 14.
The second circuit region 51 be electrically connected with described second port one 02, for driven grid line 11 or data line 12.
So, by the first port 101 be used for additional drive signal line 14 input signal is produced in same group of lead areas with the second port one 02 be used for grid line 11 or data line 12 input signal, without the need to additionally making new lead areas, circuit structure can be enormously simplify.
It should be noted that, in embodiments of the present invention, the first circuit region 50 and second circuit region 51 all can adopt flexible circuit board to be made.First circuit region 50 and second circuit region 51 can be structure as a whole, or the first circuit region 50 and second circuit region 51 also can be produced on different circuit boards, in circuit as shown in figure 14, be made as with the first circuit region 50 and second circuit region 51 explanation that example carries out respectively.Owing to considering processing cost, the first circuit region 50 and second circuit region 51 can be produced in two pieces of regions do not communicated of same circuit board.
It should be noted that, in the dot structure that the embodiment of the present invention provides, additional drive signal line 14 can adopt transparent conductive material to make.
Adopt transparent conductive material and utilize and arrange at the different layer of same position with grid line or data line and additional drive signal line as shown in figure 11, can make additional drive signal line 14 while meeting electric conductivity, improve the aperture opening ratio of display device.
In whole embodiments involved in the present invention, it should be noted that, as shown in figure 15, in the pixel of the liquid crystal indicator such as under ADS pattern, additional drive signal line 14 may need to pass through in dot structure unit the intersection region 60 that goes between, and wherein connecting line 15 is used for conducting across the public electrode in pixel cell each in Gate signal wire.Like this, when additional drives line 14 needs then to need to adopt the mode cross-over connection that via hole connects as shown in the figure to pass through when passing through lead-in wire intersection region 60, certainly such connecting line 15 also can exist in the dot structure of liquid crystal indicator adopting other patterns, and at Figure 11, Figure 12 etc. also to reserve the cross-over configurations of similar additional signal lines, only Figure 15 shows that example with above-mentioned at this, will not enumerate.
Below for dot structure in prior art, the process that leaping voltage Δ Vp produces is described in detail:
As shown in Figure 1, in the dot structure that prior art adopts, between pixel electrode 132 and public electrode, there is memory capacitance, and the drive pattern that the voltage signal of public electrode wire 10 remains unchanged.Because thin film transistor (TFT) (TFT) raceway groove is positioned on grid line (gate) 11, therefore there is stray capacitance (Cgd), like this after grid line 11 inputs low-voltage, pixel electrode 14 completes charging.But the total amount of electric charge that this liquid crystal capacitance Clc (not shown in figure 1), memory capacitance Cst (not indicating in Fig. 1), stray capacitance three store is equal before and after TFT closes.Before and after grid line 11 change in voltage, the total electrical charge sum of above three capacitance stores is equal, but due to while TFT closedown, grid line 11 voltage also produces voltage jump in this process, therefore leaping voltage (Δ Vp) problem can be produced, its process produced is as follows:
(Vp1-Vgh)×Cgd+(Vp1-Vcom)×(Clc+Cst)
＝(Vp2-Vg1)×Cgd+(Vp2-Vcom)×(Clc+Cst)
Leaping voltage is:
Vp2-Vp1＝Cgd(Vgl-Vgh)/(Cgd+Clc+Cst)
Concrete, in pixel as shown in Figure 1, leaping voltage is:
ΔVp＝Cgd(Vgl-Vgh)/(Cgd+Clc+Cst).....................................(1)
Wherein Vg1 is the low-voltage (gate voltage when TFT closes) that grid line 11 inputs, and Vgh is the high voltage (gate voltage when TFT opens) that grid line 11 inputs.Vp1 is the voltage of the pixel electrode 14 that grid line 11 high input voltage (when TFT opens) is corresponding, Vp2 is that grid line 11 inputs pixel electrode 14 voltage corresponding to low-voltage (when TFT closes), and wherein drain electrode (drain) 133 voltage and pixel electrode 14 voltage are consistent.Due to gate change in voltage, can be found out by above-mentioned computing formula (1), due to Vg1 < Vgh, then Vp2 < Vp1.The Δ Vp that one is reduced the voltage of pixel electrode 132 will be produced when Vgh changes to Vg1.
For leaping voltage Producing reason, the dot structure as shown in Figure 2 proposed for the embodiment of the present invention, is described in detail to the specific works process of dot structure:
As shown in Figure 2, additional drive signal line 14 input signal is identical with grid line 11 input signal sequential, the saltus step direction that saltus step direction and the grid line 11 of this additional drive signal line 14 input signal enter signal is contrary, and input rational signal and make additional drive signal line 14 to the electric charge caused by the first electric capacity 21 (Cad) and change in voltage and grid line 11 input signal by the electric charge caused by stray capacitance (Cgd) and the positive and negative counteracting of change in voltage, thus realize the solution of Δ Vp problem, computation process is as follows:
(Vp1-Vgh)×Cgd+(Vp1-Val)×Cad+(Vp1-Vcom)×(Clc+Cst)
＝(Vp2-Vg1)×Cgd+(Vp2-Vah)×Cad+(Vp2-Vcom)×(Clc+Cst)
Leaping voltage is:
Vp2-Vp1＝[Cgd(Vgl-Vgh)+(Vah-Val)Cad]/(Cgd+Clc+Cst+Cad)......(2)
Wherein Vah is the high voltage that additional drive signal line 14 inputs, and Val is the low-voltage that additional drive signal line 14 inputs.Realize Δ Vp=Vp2-Vp1=0 if want at this moment, then need to meet:
Cgd(Vgh-Vgl)＝(Vah-Val)Cad
Δ Vp can be eliminated.By controlling Val, the Vah of signal in additional drive signal line 14, the first electric capacity 21 (Cad) and its saltus step sequential just can reduce or eliminate Δ Vp.The voltage signal that wherein in additional drive signal line 14, the key position of signal hopping sequence mainly concentrates on gate input is jumped to the corresponding process of Vgl by Vgh, also be the process that in additional drive signal line 14, signal is jumped to Vah by Val, wherein the voltage difference of the Val time point and Val to Vah that jump to Vah is the parameter of major control, demand fulfillment:
Cgd(Vgh-Vgl)＝(Vah-Val)Cad
Waveform schematic diagram as shown in Figure 5, indicate the key position producing Δ Vp when empty coil position is the voltage signal Vg saltus step of gate input, and solid circles position is exactly the material time point inputting respective signal Va saltus step at additional drive signal line 14.And it is relative, rising to Vgh and Vah at Vgl drops in the process of Val, due to TFT switch open, electric current in data line 12 (data) is also being continuously pixel charging, therefore although this transition position also can produce electric charge redistributes, because data line 12 is also in charging, thus less for the impact of the voltage of final pixel electrode 132, also can not cause producing the problems such as Δ Vp in liquid crystal voltage, not need to consider in general calculating.
Further, in order to compensate pixel electrode in reduction or while eliminating leaping voltage, make the absolute value of difference between pixel electrode 132 voltage and public electrode wire 10 voltage within the scope of pre-set interval.For the dot structure as shown in Figure 2 that the embodiment of the present invention proposes, a kind of like this specific works process of dot structure is described in detail:
After TFT131 switch cuts out, as shown in Figure 6, gate voltage is Vgl (when TFT disconnects), gate voltage is low-voltage Vgl, and remains unchanged in a frame period (frameperiod), and Va1 is that additional drive signal line 14 draws high front voltage, Vp1 is that pixel electrode 132 is drawn high front voltage, Va2 is the voltage after additional drive signal line 14 draws high, and Vp2 is that pixel electrode 132 is drawn high rear voltage, same due to charge conservation:
(Vp1-Vgl)×Cgd+(Vp1-Va1)×Cad+(Vp1-Vcom)×(Clc+Cst)
＝(Vp2-Vgl)×Cgd+(Vp2-Va2)×Cad+(Vp2-Vcom)×(Clc+Cst)
So leaping voltage is:
Vp2-Vp1＝(Va2-Va1)×Cad/(Cgd+Cad+Clc+Cst)..................(3)
In positive period (positiveframe), when the voltage signal selecting adjustment additional drive signal line 14 to input, allow this signal when appropriate between section time meet Va2-Va1 > 0, then Vp2 > Vp1, due in positiveframe, the voltage (Vpixel) of pixel electrode 132 is greater than the voltage (Vcom) of public electrode wire 10, i.e. Vpixel > Vcom, so make the voltage of pixel electrode 132 relative to the difference of the voltage of public electrode wire 10 | Vp2-Vcom| > | Vp1-Vcom|, like this voltage of pixel electrode 132 is risen to Vp2 from Vp1, gray-scale value would not reduce due to the existence of leakage current, thus liquid crystal voltage obtains maintenance, in negative cycle (Negativeframe) scope, similar method can be adopted to realize | Vpixel-Vcom| remains unchanged, just within the scope of Negativeframe, because Vpixel is less than Vcom, Va2-Va1 < 0 can be selected, thus realize | Vp2-Vcom| > | Vp1-Vcom|, the display gray scale quality of such display device there will not be reduction, thus improve the display quality of liquid crystal display.
For leakage current electric charge number with the relation of gray-scale value, can with reference to following calculating: for positiveframe, due to the existence of leakage current, can cause | Vpixel-Vcom| reduces.First, assuming that leakage current is i, the charge loss amount in time t is Q, (Vp1 is power loss Q preceding pixel electrode voltage herein then to meet following relation, Vgl is grid voltage, and Va1 is line voltage signal, and Vp3 is the pixel electrode voltage after power loss Q):
If after time t, charge loss amount is Q, then
(Vp1-Vgl)×Cgd+(Vp1-Va1)Cad+(Vp1-Vcom)×(Clc+Cst)-Q
＝(Vp3-Vgl)×Cgd+(Vp3-Va1)Cad+(Vp3-Vcom)×(Clc+Cst)
After then leakage current electric charge reaches Q, its voltage is:
Vp3＝[Vp1(Cgd+Cad+Clc+Cst)-Q]/(Cgd+Cad+Clc+Cst)
Namely, in time t, the drop-out value (Δ Vp drop-out value) of the voltage of pixel electrode 132 is:
Vp1-Vp3＝Q/(Cgd+Cad+Clc+Cst).........................................(4)
The slippage of corresponding grey scale is, (n is bit number):
|Vp1-Vcom|/2
n＝ΔVpixel/m
M is the grey decision-making of decline.
And when adjusting Va1 to Va2, for keeping Vp1 voltage not reduce after charge Q flows out, then the following condition of demand fulfillment:
(Vp1-Vgl)×Cgd+(Vp1-Va1)Cad+(Vp1-Vcom)×(Clc+Cst)-Q
＝(Vp1-Vgl)×Cgd+(Vp1-Va2)Cad+(Vp1-Vcom)×(Clc+Cst)
That is:
Va2＝Va1+Q/Cad.........................................................(5)
By above method, because leakage current exists, charge Q is run off even if visible, when by measure or calculate accurately grasped run off charge Q, just still the voltage of pixel electrode 132 can be maintained by adjustment Va2 and Va1 | the level of Vp1-Vcom|, thus keep display effect not reduce.With state above identical: in positiveframe, because Vpixel is greater than Vcom, realizing by Vpixel is upwards drawn high | Vpixel-Vcom| does not reduce, at Negativeframe, because Vpixel is less than Vcom, realizing by Vpixel is pulled down | Vpixel-Vcom| does not reduce.The lifting of display device display effect can be achieved by above method.Concrete waveform as shown in Figure 6 and Figure 7.Wherein Fig. 6, Fig. 7 illustrate only Va2 and Va1, namely in positiveframe or Negativeframe, only promote the voltage of a pixel electrode 132, the modes such as multistage driving can also be adopted to improve the voltage (adding Va3, Va4, Van etc. as continued in a frameperiod) of pixel electrode 132, if Van or n quantity is abundant, just can realize the real-Time Compensation of the voltage for pixel electrode 132, i.e. waveform as shown in Figure 8.About the relation between Va1 and Va2, shown in Fig. 7:
Va2＝Va1+Q/Cad
Wherein in positiveframe, Q value is just, in Negativeframe, Q value is negative.The problem that the gray scale that the voltage that can solve pixel electrode 132 causes due to the existence of leakage current reduces, thus improve the display quality of liquid crystal display.
It should be noted that, illustrational dot structure as shown in Figure 2 above, all the explanations adopting additional drive signal line 14 to be parallel to grid line 11 and carry out with the structure that the drain electrode 1311 of TFT131 forms stray capacitance, when adopting the dot structure as shown in Fig. 3 or Figure 12, additional drive signal line 14 is parallel with grid line 11 and when forming the structure of the second electric capacity 22 with pixel electrode, or adopt as shown in Fig. 4 or Figure 13, during additional drive signal line 14 structure parallel with data line 12, such dot structure in the course of the work, in order to reduce or eliminate leaping voltage and solve because leakage current causes | during the problem that Vpixel-Vcom| reduces, its correlation computations formula is (as result of calculation (2) above, (3), (4), (5) the first electric capacity (Cad) value is changed into the second electric capacity (Cap) value), drive singal changes into relevant to Cap.Detailed schematic, see previous embodiment, repeats no more here.
Further, when adopting dot structure as shown in Figure 9, when there is the structure of the additional drive signal line 41 parallel with grid line 11 and the additional drive signal line 42 parallel with data line 12 in dot structure simultaneously, can reduce or eliminate leaping voltage equally and solve because leakage current causes | the problem that Vpixel-Vcom| reduces, thus improve the display quality of liquid crystal display.Its detailed schematic see previous embodiment, can repeat no more equally here.
The embodiment of the present invention provides a kind of display device, comprises any one dot structure as above.There is the beneficial effect identical with the dot structure that previous embodiment of the present invention provides, because dot structure has been described in detail in the aforementioned embodiment, repeat no more herein.
A kind of display device that the embodiment of the present invention provides, comprises dot structure.By adding the additional drive signal line being parallel to grid line and/or data line in dot structure, drain electrode or the pixel electrode of this additional drive signal line and TFT form electric capacity, and this additional drive signal line input signal is contrary with the phase place of grid line input signal, so, the drain electrode of additional drive signal line and TFT or pixel electrode form electric capacity electric charge can compensate the charge variation of stray capacitance, avoid the impact of leaping voltage on pixel electrode voltage, thus improve the display effect of display device.
The dot structure driving method that the embodiment of the present invention provides, can be applied to the dot structure provided in previous embodiment.As shown in Figure 2, this dot structure comprises: at least one pixel cell 13 that public electrode wire 10, the grid line 11 intersected by transverse and longitudinal and data line 12 define, and pixel cell 13 comprises again TFT131 and pixel electrode 132.
The dot structure driving method that the embodiment of the present invention provides comprises:
S101, grid line 11 input signal, this signal is used for opening TFT131 line by line.
S102, data line 12 input signal, this signal is used for when TFT131 opens, and is powered to pixel electrode 132 by the drain electrode 1311 of TFT.
S103, additional drive signal line 14 input signal are contrary with the phase place of grid line 11 input signal.
Wherein, additional drive signal line 14 forms the additional capacitor being used for compensation pixel structure endoparasitism capacitance charge.
Concrete, as shown in Figure 2, this additional capacitor can comprise the first electric capacity that additional drive signal line 14 is formed with the drain electrode 1311 of TFT, or, as shown in Figure 3 and Figure 4, this additional capacitor can comprise the second electric capacity 22 that additional drive signal line 14 is formed with pixel electrode 132.
A kind of dot structure driving method that the embodiment of the present invention provides.By adding the additional drive signal line being parallel to grid line and/or data line in dot structure, drain electrode or the pixel electrode of this additional drive signal line and TFT form electric capacity, and this additional drive signal line input signal is contrary with the phase place of grid line input signal, so, the drain electrode of additional drive signal line and TFT or pixel electrode form electric capacity electric charge can compensate the charge variation of stray capacitance, avoid the impact of leaping voltage on pixel electrode voltage, thus improve the display effect of display device.
Further, be illustrated the waveform of additional drive signal line 14 input signal and the waveform of grid line 11 input signal, as shown in Figure 5, additional drive signal line 14 input signal Va is contrary with the phase place of grid line 11 input signal Vg.
Further, the driving method of dot structure that the embodiment of the present invention provides also comprises:
The input of S104, additional drive signal line 14 is used for the signal of compensation pixel electrode 132 voltage.To make the absolute value of difference between the voltage of described pixel electrode 132 and the voltage of described public electrode wire 10 input signal within the scope of pre-set interval, thus improve the display quality of liquid crystal display.
It should be noted that, from pixel charging process of the prior art, specifically as shown in Figure 1, after grid line (gate) 11 signal high voltage passes into, TFT13 switch opens, namely data line (data) 12 electric current passes in pixel electrode 14, and after charging complete, grid line (gate) 11 signal becomes low-voltage, TFT switch cuts out, pixel electrode 14 charging complete.But in the process that next pixel is charged, also there is the regular hour, and during this period of time, due to the existence of the leakage current that many reasons causes, cause the voltage (Vpixel) of pixel electrode 14 and the difference of public electrode wire 10 voltage (Vcom) in this frame period (Frameperiod), namely | Vpixel-Vcom| can reduce gradually, therefore grey scale pixel value also can change thereupon, the gray-scale value of original setting can not be maintained, thus cause pixel display effect to reduce.
Further, additional drive signal line 14 input signal specifically refers to for the indemnifying measure compensated in the voltage of described pixel electrode: as shown in Figure 6, in positive period (positiveframe), because pixel electrode voltage (Vpixel) is greater than public electrode voltages (Vcom), the voltage Va1 by additional drive signal line inputs is adopted upwards to draw high as Va2, corresponding pixel electrode voltage (Vpixel) also can upwards draw high, thus realize | Vpixel-Vcom| does not reduce, at negative cycle (Negativeframe), because pixel electrode voltage (Vpixel) is less than public electrode voltages (Vcom), adopting the voltage Va1 inputted by additional drive signal line drop-down is Va2, corresponding pixel electrode voltage (Vpixel) also can be subject to drop-down, thus realize | Vpixel-Vcom| does not reduce, thus improve the display quality of liquid crystal display.。
Concrete, pre-set interval can be the scope chosen according to actual needs.Such as, within as shown in Figure 7 positive period, the voltage Vcom inputted due to public electrode wire 10 is constant, through the voltage of the pixel electrode 132 of single compensation between V1 and V2, therefore between the voltage Vcom that inputs of the voltage of pixel electrode 132 and described public electrode wire 10, the absolute value of difference is in pre-set interval | within V1-V2|.
Or, further, the absolute value of difference between the voltage (Vcom) that the voltage (Vpixel) of pixel electrode 132 and public electrode wire 10 input | the pre-set interval residing for Vpixel-Vcom| can also be a concrete value.As shown in Figure 8, repeatedly adjust the signal inputted by additional drive signal line 14 and real-Time Compensation is carried out to the voltage of pixel electrode 132, the voltage of pixel electrode 132 is made to be tending towards a fixing numerical value Vpq, the voltage Vcom inputted due to public electrode wire 10 is constant, therefore can ensure the absolute value of difference between the voltage Vcom that the voltage Vpixel of pixel electrode 132 and public electrode wire 10 input | and Vpixel-Vcom| is | Vpq-Vcom|.
For leaping voltage Producing reason, the dot structure as shown in Figure 2 proposed for the embodiment of the present invention, is described in detail to the driving method of dot structure:
As shown in Figure 2, additional drive signal line 14 input signal is identical with grid line 11 input signal sequential, the saltus step direction that saltus step direction and the grid line 11 of this additional drive signal line 14 input signal enter signal is contrary, and input rational signal and make additional drive signal line 14 to the electric charge caused by the first electric capacity 21 (Cad) and change in voltage and grid line 11 input signal by the electric charge caused by stray capacitance (Cgd) and the positive and negative counteracting of change in voltage, thus realize the solution of Δ Vp problem, computation process is as follows:
(Vp1-Vgh)×Cgd+(Vp1-Val)×Cad+(Vp1-Vcom)×(Clc+Cst)
＝(Vp2-Vgl)×Cgd+(Vp2-Vah)×Cad+(Vp2-Vcom)×(Clc+Cst)
Leaping voltage is:
Vp2-Vp1＝[Cgd(Vgl-Vgh)+(Vah-Val)Cad]/(Cgd+Clc+Cst+Cad).........(6)
Wherein Vah is the high voltage that additional drive signal line 14 inputs, and Va1 is the low-voltage that additional drive signal line 14 inputs.Realize Δ Vp=Vp2-Vp1=0 if want at this moment, then need to meet:
Cgd(Vgh-Vgl)＝(Vah-Val)Cad
Δ Vp can be eliminated.By controlling Val, the Vah of signal in additional drive signal line, the first electric capacity 21 (Cad) and its saltus step sequential just can reduce or eliminate Δ Vp.The voltage signal that wherein in additional drive signal line 14, the key position of signal hopping sequence mainly concentrates on gate input is jumped to the corresponding process of Vgl by Vgh, also be the process that in additional drive signal line 14, signal is jumped to Vah by Val, wherein the voltage difference of the Val time point and Val to Vah that jump to Vah is the parameter of our major control, demand fulfillment:
Cgd(Vgh-Vgl)＝(Vah-Val)Cad
Waveform schematic diagram as shown in Figure 5, indicate the key position producing Δ Vp when empty coil position is the voltage signal saltus step of gate input, and solid circles position is exactly the material time point inputting respective signal saltus step at additional drive signal line 14.And it is relative, rising to Vgh and Vah at Vgl drops in the process of Val, due to TFT switch open, electric current in data line 12 (data) is also being continuously pixel charging, therefore although this transition position also can produce electric charge redistributes, because data line 12 is also in charging, thus less for the impact of the voltage of final pixel electrode 132, also can not cause producing the problems such as Δ Vp in liquid crystal voltage, not need to consider in general calculating.
Further, in order to compensate pixel electrode, make the absolute value of difference between pixel electrode 132 voltage and public electrode wire 10 voltage within the scope of pre-set interval, for dot structure as shown in Figure 1, the driving method of dot structure be described in detail:
When public electrode wire 10 inputs transformable voltage, the computation process of leaping voltage equally can according to formula:
(Vp1-Vgl)×Cgd+(Vp1-Vcom1)×(Clc+Cst)
＝(Vp2-Vgl)×Cgd+(Vp2-Vcom2)×(Clc+Cst)
So leaping voltage is:
Vp2-Vp1＝(Vcom2-Vcom1)×(Clc+Cs)/(Cgd+Clc+Cst).......................(7)
In the process of the change in voltage of pixel electrode 132, as in positiveframe, demand fulfillment Vcom2 > Vcom1, just can realize the change Vp2 > Vp1 of pixel electrode 132 voltage, after the voltage lifting of pixel electrode 132, now go back demand fulfillment | Vp2-Vcom2| > | Vp1-Vcom1| just can reach the object preventing the voltage of pixel electrode 132 from reducing, concrete after loss charge Q, Vcom1 and Vcom2 pass is:
(Vp1-Vgl)×Cgd+(Vp1-Vcom1)×(Clc+Cst)-Q
＝(Vp2-Vgl)×Cgd+(Vp2-Vcom2)×(Clc+Cst)
That is:
(Vp2-Vcom2)-(Vp1-Vcom1)＝((Vp1-Vp2)Cgd+Q)/(Clc+Cst).........(8)
As shown in above formula, no matter at positiveframe still in Negativeframe, also only controlling calculation is needed | Vp2-Vcom2| > | Vp1-Vcom1|, and its calculated relationship meets (7) formula, just can realize liquid crystal voltage | the maintenance of Vpixel-Vcom| with stable, thus improves the display quality of liquid crystal display.
It should be noted that, this driving method not only can be applied to dot structure of the prior art as shown in Figure 1, can also be applied to the dot structure that the embodiment of the present invention provides.Its computing method are the same, repeat no more herein.
Further, in order to compensate pixel electrode 132 in reduction or while eliminating leaping voltage, make the absolute value of difference between the voltage of pixel electrode 132 and the voltage of public electrode wire 10 within the scope of pre-set interval, for the dot structure as shown in Figure 2 that the embodiment of the present invention proposes, the driving method of dot structure is described in detail:
After TFT131 switch cuts out, as shown in Figure 6, gate voltage is Vgl (when TFT disconnects), gate voltage is low-voltage Vgl, and remains unchanged in a frame period (frameperiod), and Va1 is that additional drive signal line 14 draws high front voltage, Vp1 is that pixel electrode 132 is drawn high front voltage, Va2 is the voltage after additional drive signal line 14 draws high, and Vp2 is that pixel electrode 132 is drawn high rear voltage, same due to charge conservation:
(Vp1-Vgl)×Cgd+(Vp1-Va1)×Cad+(Vp1-Vcom)×(Clc+Cst)
＝(Vp2-Vgl)×Cgd+(Vp2-Va2)×Cad+(Vp2-Vcom)×(Clc+Cst)
So leaping voltage is:
Vp2-Vp1＝(Va2-Va1)×Cad/(Cgd+Cad+Clc+Cst)...........................(9)
In positive period (positiveframe), when the voltage signal selecting adjustment additional drive signal line 14 to input, allow this signal when appropriate between section time meet Va2-Va1 > 0, then Vp2 > Vp1, due in positiveframe, voltage (the Vpixel of pixel electrode 132, i.e. Vp) be greater than public electrode voltages (Vcom), i.e. Vpixel > Vcom, so make the voltage of pixel electrode 132 relative to the difference of public electrode wire 10 voltage | Vp2-Vcom| > | Vp1-Vcom|, like this voltage of pixel electrode 132 is risen to Vp2 from Vp1, gray-scale value would not reduce due to the existence of leakage current, thus liquid crystal voltage obtains maintenance, in negative cycle (Negativeframe) scope, similar method can be adopted to realize | Vpixel-Vcom| remains unchanged, just within the scope of Negativeframe, because Vpixel is less than Vcom, can Va2-Va1 < 0, thus realize | Vp2-Vcom| > | Vp1-Vcom|, the display gray scale quality of such display device there will not be reduction.
For leakage current electric charge number with the relation of gray-scale value, can with reference to following calculating: for positiveframe, due to the existence of leakage current, can cause | Vpixel-Vcom| reduces.First, assuming that leakage current is i, the charge loss amount in time t is Q, (Vp1 is power loss Q preceding pixel electrode voltage herein then to meet following relation, Vgl is grid voltage, and Va1 is line voltage signal, and Vp3 is the pixel electrode voltage after power loss Q):
If after time t, charge loss amount is Q, then
(Vp1-Vgl)×Cgd+(Vp1-Va1)Cad+(Vp1-Vcom)×(Clc+Cst)-Q
＝(Vp3-Vgl)×Cgd+(Vp3-Va1)Cad+(Vp3-Vcom)×(Clc+Cst)
After then leakage current electric charge reaches Q, its voltage is:
Vp3＝[Vp1(Cgd+Cad+Clc+Cst)-Q]/(Cgd+Cad+Clc+Cst)
Namely, in time t, the drop-out value (Δ Vp drop-out value) of the voltage of pixel electrode 132 is:
Vp1-Vp3＝Q/(Cgd+Cad+Clc+Cst)........................................(10)
The slippage of corresponding grey scale is, (n is bit number):
|Vp1-Vcom|/2
n＝ΔVpixel/m
M is the grey decision-making of decline.
And when adjusting Va1 to Va2, for keeping Vp1 voltage not reduce after charge Q flows out, then the following condition of demand fulfillment:
(Vp1-Vgl)×Cgd+(Vp1-Va1)Cad+(Vp1-Vcom)×(Clc+Cst)-Q
＝(Vp1-Vgl)×Cgd+(Vp1-Va2)Cad+(Vp1-Vcom)×(Clc+Cst)
That is:
Va2＝Va1+Q/Cad.........................................................(11)
By above method, because leakage current exists, charge Q is run off even if visible, when by measure or calculate accurately grasped run off charge Q, just still the voltage of pixel electrode 132 can be maintained by adjustment Va2 and Va1 | the level of Vp1-Vcom|, thus keep display effect not reduce.With state above identical: in positiveframe, because Vpixel is greater than Vcom, realizing by Vpixel is upwards drawn high | Vpixel-Vcom| does not reduce, at Negativeframe, because Vpixel is little, in Vcom, realizing by Vpixel is drawn high downwards | Vpixel-Vcom| does not reduce.The lifting of display device display effect can be achieved by above method.Concrete waveform as shown in Figure 6 and Figure 7.Wherein Fig. 6 illustrate only Va2 and Va1, namely in positiveframe or Negativeframe, only promote the voltage of a pixel electrode 132, the modes such as multistage driving can also be adopted to improve the voltage (adding Va3, Va4, Van etc. as continued in a frameperiod) of pixel electrode 132, if Van or n quantity is enough large, just can realize the real-Time Compensation of the voltage for pixel electrode 132, i.e. waveform as shown in Figure 8, about the relation between Va1 and Va2, shown in Fig. 7:
Va2＝Va1+Q/Cad
Wherein in positiveframe, Q value is just, in Negativeframe, Q value is negative.The problem that the gray scale that the voltage that can solve pixel electrode 132 causes due to the existence of leakage current reduces.
It should be noted that, illustrational dot structure as shown in Figure 2 above, all the explanations adopting additional drive signal line 14 to be parallel to grid line 11 and carry out with the structure that the drain electrode 1311 of TFT131 forms stray capacitance, when adopting the dot structure as shown in Fig. 3 or Figure 12, additional drive signal line 14 is parallel with grid line 11 and when forming the structure of the second electric capacity 22 with pixel electrode, or adopt as shown in Fig. 4 or Figure 13, during additional drive signal line 14 structure parallel with data line 12, such dot structure in the course of the work, in order to reduce or eliminate leaping voltage and solve because leakage current causes | during the problem that Vpixel-Vcom| reduces, its correlation computations formula is (as result of calculation (6) above, (9), (10), (11) the first electric capacity (Cad) value is changed into the second electric capacity (Cap) value), drive singal changes into relevant to Cap.Detailed schematic, see previous embodiment, repeats no more here.
Further, when adopting dot structure as shown in Figure 9, when there is the structure of the additional drive signal line 41 parallel with grid line 11 and the additional drive signal line 42 parallel with data line in dot structure simultaneously, can reduce or eliminate leaping voltage equally and solve because leakage current causes | the problem that Vpixel-Vcom| reduces, thus improve the display quality of liquid crystal display.Its detailed schematic see previous embodiment, can repeat no more equally here.
One of ordinary skill in the art will appreciate that: all or part of step realizing said method embodiment can have been come by the hardware that programmed instruction is relevant, aforesaid program can be stored in a computer read/write memory medium, this program, when performing, performs the step comprising said method embodiment; And aforesaid storage medium comprises: ROM, RAM, magnetic disc or CD etc. various can be program code stored medium.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; change can be expected easily or replace, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of described claim.
Claims (13)
1. a dot structure, comprising: at least one pixel cell that public electrode wire, the grid line intersected by transverse and longitudinal and data line define, and described pixel cell comprises thin film transistor (TFT) and pixel electrode; It is characterized in that, described dot structure also comprises: additional drive signal line;
Described additional drive signal line forms the additional capacitor for compensating described dot structure endoparasitism capacitance charge;
Wherein, the first electric capacity that the drain electrode that described additional capacitor comprises described additional drive signal line and described thin film transistor (TFT) is formed; With the second electric capacity that described additional drive signal line and described pixel electrode are formed; Or
The first electric capacity that the drain electrode that described additional capacitor comprises described additional drive signal line and described thin film transistor (TFT) is formed;
Described additional drive signal line input signal is contrary with the phase place of described grid line input signal.
2. dot structure according to claim 1, is characterized in that, described additional drive signal line input signal is for compensating the voltage of described pixel electrode.
3. dot structure according to claim 1 and 2, is characterized in that,
Described additional drive signal line is parallel with described grid line; And/or,
Described additional drive signal line is parallel with described data line.
4. dot structure according to claim 3, is characterized in that, described additional drive signal line is parallel with described grid line to be comprised:
Described additional drive signal line and described grid line are that same layer metal material is formed; Or,
Described additional drive signal line and the different layer of described grid line are arranged.
5. dot structure according to claim 4, is characterized in that, when described additional drive signal line and the different layer of described grid line are arranged, the drain electrode of described additional drive signal line and described thin film transistor (TFT) forms the first electric capacity and comprises:
Drain electrode and the extension electrode of described additional drive signal line and described thin film transistor (TFT) form the first electric capacity, described extension electrode is the region that the drain electrode of described thin film transistor (TFT) extends along described drive signal line direction, and described extension electrode is electrically connected with the drain electrode of described thin film transistor (TFT).
6. dot structure according to claim 3, is characterized in that, described additional drive signal line is parallel with described data line to be comprised:
Described additional drive signal line and described data line are that same layer metal material is formed; Or,
Described additional drive signal line and the different layer of described data line are arranged.
7. dot structure according to claim 1 and 2, is characterized in that, described additional drive signal line comprises: the first sub-additional drive signal line and the second sub-additional drive signal line;
Described first sub-additional drive signal line is parallel with described grid line or described data line, and described first sub-additional drive signal line is positioned at outside described grid line or described data line region;
Described second sub-additional drive signal line is positioned at described grid line or described data line region.
8. dot structure according to claim 1 and 2, is characterized in that, described dot structure also comprises at least one group of parallel lead areas, and each is organized described lead areas and comprises the first port and the second port;
Described first port is for introducing the signal of described additional drive signal line input, and described second port is for introducing the signal of described grid line or the input of described data line.
9. dot structure according to claim 8, is characterized in that, described dot structure also comprises:
The first circuit region be electrically connected with described first port, for driving described additional drive signal line;
The second circuit region be electrically connected with described second port, for driving described grid line or described data line.
10. dot structure according to claim 1, is characterized in that, described additional drive signal line adopts transparent conductive material to make.
11. 1 kinds of display device, is characterized in that, comprise arbitrary described dot structure in claim 1-10.
12. 1 kinds of dot structure driving methods, described dot structure comprises: at least one pixel cell that public electrode wire, the grid line intersected by transverse and longitudinal and data line define, and described pixel cell comprises thin film transistor (TFT) and pixel electrode; It is characterized in that, described method comprises:
Described grid line input signal, for opening described thin film transistor (TFT) line by line;
Described data line input signal, for when described thin film transistor (TFT) is opened, is powered to described pixel electrode by the drain electrode of described thin film transistor (TFT);
Additional drive signal line input signal is contrary with the phase place of described grid line input signal;
Wherein, described additional drive signal line forms the additional capacitor for compensating described dot structure endoparasitism capacitance charge;
The first electric capacity that the drain electrode that described additional capacitor comprises described additional drive signal line and described thin film transistor (TFT) is formed; With the second electric capacity that described additional drive signal line and described pixel electrode are formed; Or
The first electric capacity that the drain electrode that described additional capacitor comprises described additional drive signal line and described thin film transistor (TFT) is formed.
13. dot structure driving methods according to claim 12, it is characterized in that, described method also comprises:
The signal of described additional drive signal line input for compensating described pixel electrode voltage.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310164041.XA CN103257498B (en) | 2013-05-07 | 2013-05-07 | A kind of dot structure and driving method, display device |
| PCT/CN2013/085284 WO2014180091A1 (en) | 2013-05-07 | 2013-10-16 | Pixel structure and driving method therefor, and display apparatus |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310164041.XA CN103257498B (en) | 2013-05-07 | 2013-05-07 | A kind of dot structure and driving method, display device |
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| CN103257498A CN103257498A (en) | 2013-08-21 |
| CN103257498B true CN103257498B (en) | 2016-04-13 |
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| CN201310164041.XA Expired - Fee Related CN103257498B (en) | 2013-05-07 | 2013-05-07 | A kind of dot structure and driving method, display device |
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| CN (1) | CN103257498B (en) |
| WO (1) | WO2014180091A1 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103257498B (en) * | 2013-05-07 | 2016-04-13 | 京东方科技集团股份有限公司 | A kind of dot structure and driving method, display device |
| CN103488019B (en) * | 2013-09-25 | 2016-08-10 | 京东方科技集团股份有限公司 | A kind of array base palte and driving method, display device |
| CN104317085B (en) * | 2014-11-13 | 2017-01-25 | 京东方科技集团股份有限公司 | Data voltage compensation method, data voltage compensation device and display device |
| CN104570530A (en) * | 2015-02-02 | 2015-04-29 | 京东方科技集团股份有限公司 | Double-gate line array substrate and display device |
| CN104991363A (en) * | 2015-07-17 | 2015-10-21 | 深圳市华星光电技术有限公司 | Compensation feedback voltage pixel unit circuit |
| CN106023934B (en) * | 2016-07-26 | 2018-07-17 | 京东方科技集团股份有限公司 | A kind of display device and its driving method |
| CN107085487B (en) * | 2017-04-28 | 2020-04-14 | 厦门天马微电子有限公司 | Array substrate, display panel and display device |
| CN107195280B (en) * | 2017-07-31 | 2020-12-29 | 京东方科技集团股份有限公司 | Pixel voltage compensation method, pixel voltage compensation system and display device |
| CN107527925B (en) * | 2017-08-25 | 2019-11-05 | 京东方科技集团股份有限公司 | Display base plate and its manufacturing method, display panel, display device |
| CN109087925B (en) | 2018-08-09 | 2020-11-13 | 京东方科技集团股份有限公司 | Array substrate, X-ray flat panel detector and X-ray detection method |
| CN112825331A (en) | 2019-11-20 | 2021-05-21 | 京东方科技集团股份有限公司 | Thin film transistor, array substrate and display device |
| CN111679520A (en) | 2020-06-01 | 2020-09-18 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| CN115240608B (en) * | 2022-07-11 | 2024-07-05 | 京东方科技集团股份有限公司 | Display panel, display driving method and display touch device |
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| Publication number | Publication date |
|---|---|
| CN103257498A (en) | 2013-08-21 |
| WO2014180091A1 (en) | 2014-11-13 |
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