CN102034443A - Method for improving accuracy of pixel electrode voltage and array substrate - Google Patents
Method for improving accuracy of pixel electrode voltage and array substrate Download PDFInfo
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- 239000010409 thin film Substances 0.000 claims abstract description 36
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Abstract
The invention discloses a method for improving accuracy of pixel electrode voltage and an array substrate, relates to the technical field of liquid crystal display, and aims to improve the accuracy of the pixel electrode voltage. The method for improving the accuracy of the pixel electrode voltage comprises a step of providing compensating voltage for the pixel electrode voltage, wherein the offset voltage can offset the voltage changed on a pixel electrode. The array substrate comprises a substrate, wherein a grid line is arranged on the substrate; a data line is arranged vertical to the grid line; a pixel region is defined between the grid line and the data line; a thin film transistor and the pixel electrode are arranged in the pixel region; a pixel electrode voltage compensating circuit is arranged on the substrate and on the edge of the grid line and is used for providing compensating voltage for the pixel electrode voltage; and the compensating voltage can offset the voltage changed on the pixel electrode. The invention can be used for keeping the accuracy of the pixel electrode voltage.
Description
Technical Field
The invention relates to the technical field of liquid crystal display, in particular to a method for improving the voltage accuracy of a pixel electrode and an array substrate.
Background
On the array substrate, a region defined between the gate line and the data line forms a pixel region. As shown in fig. 1, a Thin Film Transistor (TFT)1 and a pixel electrode 2 are disposed in a pixel region defined by a gate line N, a gate line N +1, a data line M, and a data line M +1, a gate electrode of the thin film transistor 1 is connected to the gate line N, a source electrode thereof is connected to the data line M, and a drain electrode thereof is connected to the pixel electrode 2. The pixel electrode 2 and the common electrode 3 are opposite, and a parallel storage capacitor C is formed between the pixel electrode 2 and the common electrode 3stAnd a pixel capacitor Clc。
When the display device works, the grid lines and the data lines are respectively controlled by grid driving and source driving, wherein under the control of a grid driving signal, the grid electrodes are sequentially opened, the data voltage of the corresponding line is transmitted to the corresponding pixel electrode 2 by the source driving, and the pixel electrode 2 is charged, so that the gray voltage required by displaying each gray scale is formed, and each frame of picture is further displayed.
However, in the structure of the array substrate, the gate electrode of the thin film transistor 1 is opposite to a partial region of the pixel electrode 2, so that a parasitic capacitance C is generated between the gate electrode of the thin film transistor 1 and the pixel electrode 2 during the state transition of the gate line N from on to offgd. At gate turn-on voltage VghTo a turn-off voltage VglAt the moment of time, the parasitic capacitance CgdThe charge accumulated on the pixel electrode 2 is changed to make the voltage V of the pixel electrode 2 as shown in fig. 2data(i.e., drain voltage of the thin film transistor 1) by a variation Δ Vp。
Thus, due to the pixel electrode voltage VdataResulting in liquid crystal molecules within the pixelThe deflection angle changes, so that the gray level transmittance changes, and the gray level display of the image is inaccurate; and due to the voltage V of the pixel electrodedataThe polarity of positive or negative polarity being alternated between adjacent frames, i.e. when the voltage V of the pixel electrode is applieddataVoltage V of pixel electrode with positive polaritydataTowards the common electrode by a voltage VcomWhen the voltage of the pixel electrode is negative, the voltage V of the pixel electrode changesdataVoltage V towards the back of the common electrodecomIs changed. Thereby causing flickering of the picture and deterioration of image display quality.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a method for improving the accuracy of the pixel electrode voltage, so as to improve the accuracy of the pixel electrode voltage.
In order to solve the technical problems, the invention adopts the following technical scheme:
a method of improving pixel electrode voltage accuracy, comprising:
providing a compensation voltage for the pixel electrode voltage, the compensation voltage being capable of counteracting a varying voltage on the pixel electrode.
The method for improving the accuracy of the pixel electrode voltage can provide the compensation voltage for the pixel electrode voltage, and the compensation voltage can offset the voltage of the pixel electrode voltage, so when the pixel electrode voltage changes from an on state to an off state of a thin film transistor connected with the pixel electrode, the compensation voltage offsets the voltage of the pixel electrode voltage to a certain extent, thereby reducing the variation degree of the pixel electrode voltage, even enabling the pixel electrode voltage not to change, improving the accuracy of the pixel electrode voltage, reducing the flicker of a display panel and effectively improving the picture quality.
Another technical problem to be solved by the present invention is to provide an array substrate, which can improve the accuracy of the pixel electrode voltage.
In order to solve the technical problems, the invention adopts the following technical scheme:
an array substrate comprises a substrate, wherein a grid line is arranged on the substrate, a data line is arranged perpendicular to the grid line, a pixel area is limited between the grid line and the data line, a thin film transistor and a pixel electrode are arranged in the pixel area, the grid electrode of the thin film transistor is connected with the grid line, the source electrode of the thin film transistor is connected with the data line, the drain electrode of the thin film transistor is connected with the pixel electrode, a pixel electrode voltage compensation circuit is arranged on the substrate and at the edge of the grid line, the pixel electrode voltage compensation circuit is used for providing compensation voltage for the voltage of the pixel electrode, and the compensation voltage can offset the voltage which changes on the pixel electrode.
According to the array substrate provided by the invention, the pixel electrode voltage compensation circuit is arranged and is used for providing compensation voltage for the pixel electrode voltage, and the compensation voltage can offset the voltage of the pixel electrode voltage which changes, so that when the pixel electrode voltage changes from an on state to an off state of the thin film transistor, the compensation voltage offsets the voltage of the pixel electrode voltage which changes to a certain extent, the change degree of the pixel electrode voltage is reduced, even the pixel electrode voltage does not change, the accuracy of the pixel electrode voltage is improved, the flicker of a display panel is reduced, and the picture quality is effectively improved.
Drawings
FIG. 1 is a diagram of a pixel driving circuit in the prior art;
FIG. 2 is a diagram illustrating a voltage state of a pixel electrode in the prior art;
FIG. 3 is a schematic circuit diagram of an embodiment of an array substrate according to the present invention;
FIG. 4 is a schematic diagram illustrating voltage states of pixel electrodes in an embodiment of an array substrate according to the invention;
fig. 5 is a schematic view of an array substrate according to an embodiment of the invention.
Reference numerals:
the pixel circuit comprises a 1-thin film transistor, a 2-pixel electrode, a 3-common electrode, a 4-inverting device, a 5-output line, a 6-grid line, a 7-data line, an 8-pixel area and a 9-pixel electrode voltage compensation circuit.
Detailed Description
The invention aims to provide a method for improving the accuracy of pixel electrode voltage and an array substrate, so as to improve the accuracy of the pixel electrode voltage.
The invention is described in detail below with reference to the figures and examples.
The embodiment of the invention provides a method for improving the voltage accuracy of a pixel electrode, which comprises the following steps: providing a compensation voltage for the pixel electrode voltage, the compensation voltage being capable of counteracting a varying voltage on the pixel electrode.
The method for improving the accuracy of the pixel electrode voltage in the embodiment can provide the compensation voltage for the pixel electrode voltage, and when the pixel electrode voltage changes from an on state to an off state of a thin film transistor connected with the pixel electrode, the compensation voltage can offset the changed voltage to a certain extent, so that the change degree of the pixel electrode voltage can be reduced, even the pixel electrode voltage does not change, thereby improving the accuracy of the pixel electrode voltage, reducing the flicker of a display panel, and effectively improving the picture quality.
The compensation voltage provided for the pixel electrode voltage is specifically: connecting compensation capacitor and inverting device between the gate line and the pixel electrode, wherein the input end of the inverting device is connected with the gate line, the output end is connected with the compensation capacitor, and the compensation capacitorThe compensation capacitor is connected between the output end of the inverting device and the pixel electrode; wherein, the compensation capacitor is used for generating voltage; and the inverting means is arranged to invert the voltage to form a compensation voltage such that the sign of the compensation voltage is equal to the pixel electrode voltage at the parasitic capacitance CgdThe voltages that change under the influence are of opposite sign, so that the compensation voltage can be cancelled out with the voltages that change on the pixel electrodes.
Also preferably, the capacitance value of the compensation capacitor and the parasitic capacitance CgdIs equivalent to the capacitance of the capacitor C, wherein the parasitic capacitance C isgdIs generated between the gate electrode and the pixel electrode in a state where the thin film transistor connected to the pixel electrode is turned on to off. Thus, the compensation voltage caused by the compensation capacitor can be completely offset by the parasitic capacitor CgdThe caused voltage change of the pixel electrode greatly improves the accuracy of the voltage of the pixel electrode. And the voltage of the pixel electrode can not be close to the voltage of the common electrode or deviate from the voltage of the common electrode, so that the stability of the voltage of the pixel electrode is improved, the picture flicker is avoided, and the picture display quality is effectively improved.
The inverting device can be an inverting operational amplifier, the input end of the inverting operational amplifier is connected with the grid line, and the output end of the inverting operational amplifier is connected with the compensation capacitor; or, the inverting device may also be a gate driving chip, an input end of the gate driving chip is connected to the gate line, and an output end of the gate driving chip is connected to the compensation capacitor. The output voltage of the inverting operational amplifier or the gate driving chip is inverted with respect to the voltage of the gate line, i.e. when the voltage of the gate line is changed from the turn-on voltage VghTo a turn-off voltage VglWhen the output voltage is higher than the turn-off voltage VglChange to the opening voltage VghThereby enabling the compensation voltage caused by the compensation capacitor and the parasitic capacitor CgdThe resulting changes in the pixel electrode voltage are in opposite phases, thereby enabling the two to cancel each other out.
In summary, the method for improving the accuracy of the pixel electrode voltage in this embodiment can provide a compensation voltage for the pixel electrode voltage, where the compensation voltage can offset a voltage at which the pixel electrode voltage changes, so that when the pixel electrode voltage changes from an on state to an off state of a thin film transistor connected to the pixel electrode, the compensation voltage offsets the voltage at which the pixel electrode voltage changes to a certain extent, so as to reduce the degree of change of the pixel electrode voltage, or even prevent the pixel electrode voltage from changing, thereby improving the accuracy of the pixel electrode voltage, reducing the flicker of the display panel, and effectively improving the picture quality.
In addition, as shown in fig. 3, the array substrate includes a substrate, on which a gate line 6 is disposed, a data line 7 is disposed perpendicular to the gate line 6, a pixel region 8 is defined between the gate line 6 and the data line 7, a thin film transistor 1 and a pixel electrode 2 are disposed in the pixel region 8, a gate electrode of the thin film transistor 1 is connected to the gate line 6, a source electrode is connected to the data line 7, and a drain electrode is connected to the pixel electrode 2, a pixel electrode voltage compensation circuit 9 is disposed on the substrate and at an edge of the gate line 6, and the pixel electrode voltage compensation circuit 9 is configured to provide a compensation voltage for a pixel electrode voltage, where the compensation voltage can counteract a voltage that varies on the pixel electrode 2.
In the array substrate in this embodiment, since the pixel electrode voltage compensation circuit 9 is provided, and the pixel electrode voltage compensation circuit 9 is configured to provide a compensation voltage for the pixel electrode voltage, where the compensation voltage can offset a voltage at which the pixel electrode voltage changes, when the pixel electrode voltage changes from an on state to an off state of the thin film transistor 1, the compensation voltage offsets the voltage at which the pixel electrode voltage changes to a certain extent, so that the degree of change of the pixel electrode voltage can be reduced, and even the pixel electrode voltage does not change, thereby improving the accuracy of the pixel electrode voltage, reducing the flicker of the display panel, and effectively improving the picture quality.
Specifically, as can be seen from fig. 3, when the gate line N inputs the turn-on voltage VghWhen the thin film transistor 1(TFT) is turned on, the data line M charges the pixel electrode 2 through the thin film transistor 1; when in useGate line N inputs a turn-off voltage VglWhen the thin film transistor 1 is turned off, a parasitic capacitance C is generated between the gate electrode of the thin film transistor 1 and the pixel electrode 2 when the thin film transistor 1 is turned off due to an overlapping region between the gate electrode of the thin film transistor 1 and the pixel electrode 2 in this processgd. When the gate voltage of the thin film transistor 1 is from VghChange to VglDue to parasitic capacitance CgdThe voltage of the pixel electrode 2 changes accordingly, and the change value is Δ VpAccording to the principle of charge conservation:
Q1＝Cgd(Vdata-Vgh)+Cst(Vdata-Vgl)+Clc(Vdata-Vcom)
Q2＝Cgd(V′data-Vgh)+Cst(V′data-Vgl)+Clc(V′data-Vcom)
∵Q1＝Q2
∴ <math><mrow><mi>ΔVp</mi><mo>=</mo><msub><msup><mi>V</mi><mo>′</mo></msup><mi>data</mi></msub><mo>-</mo><msub><mi>V</mi><mi>data</mi></msub><mo>=</mo><mfrac><msub><mi>C</mi><mi>gd</mi></msub><mrow><msub><mi>C</mi><mi>gd</mi></msub><mo>+</mo><msub><mi>C</mi><mi>st</mi></msub><mo>+</mo><msub><mi>C</mi><mi>lc</mi></msub></mrow></mfrac><mrow><mo>(</mo><msub><mi>V</mi><mi>gh</mi></msub><mo>-</mo><msub><mi>V</mi><mi>gl</mi></msub><mo>)</mo></mrow></mrow></math>
in this embodiment, a compensation capacitor C is connected between the gate line N and the pixel electrode 2oSo that the gate of the thin film transistor 1 is turned on from the turn-on voltage VghTo a turn-off voltage VglAt the moment of time, compensating the capacitance CoCausing a voltage V of the pixel electrode 2dataIs changed by delta V'p. And compensating the capacitance CoAn inverter 4 is connected, the inverter 4 being such thatTo obtain delta V'pAnd Δ VpOpposite sign, therefore Δ V'pCan cancel a part of Δ VpThe degree of change of the voltage of the pixel electrode is reduced, and therefore the accuracy of the voltage of the pixel electrode is improved.
Wherein preferably, the compensation capacitor CoAnd a parasitic capacitance C generated between the gate electrode and the pixel electrode 2 in a state where the thin film transistor 1 is turned on to offgdThe capacitance values of (a) are equivalent. Thus, by compensating the capacitance CoInduced voltage change Δ V 'of the pixel electrode 2'pIs then related to Δ VpAnd (4) the equivalent. Therefore, Δ Vp + Δ Vp' is 0, so that the voltage of the pixel electrode 2 is changed to zero as shown in fig. 4, and the accuracy of the pixel electrode voltage is greatly improved. And is at Δ V'pAnd Δ VpAfter all the offsets, the voltage of the pixel electrode 2 does not get close to the voltage of the common electrode 3 or deviate from the voltage of the common electrode 3, so that the voltage stability of the pixel electrode 2 is improved, the image flicker is avoided, and the image display quality is effectively improved.
As can be seen from FIG. 3, the inverting device 4 in this embodiment is an inverting amplifier AoThe inverse phase amplifier AoThe input end of the compensation capacitor C is connected with the grid line N, and the output end of the compensation capacitor C is connected with the grid line NoAnd (4) connecting. The voltage of the grid line N is input to an inverting operational amplifier AoAfter the inverting operational amplifier, the output voltage is just opposite to the voltage polarity of the grid line N. That is, the thin film transistor 1 is driven from the turn-on voltage VghTo a turn-off voltage VglIn the change process, the inverting operational amplifier AoIs from VglChange to VghThen by the compensation capacitor CoInduced voltage change Δ V 'of the pixel electrode 2'pThen it is:
from this, it is found that ` V `'pAnd Δ VpThe sign is opposite. Delta V'pCan offset DeltaVp。
It should be noted that, in this embodiment, it is not necessary to provide an inverting amplifier a in each pixel region 8 defined by the gate lines 6 and the data lines 7 on the array substrateo. Instead, as shown in FIG. 5, an inverting op amp A is providedoArranged between the gate line 6 and the first pixel electrode corresponding to the gate line 6, and the inverting amplifier AoOutput lines 5 are connected in parallel with the gate lines 6, and the output lines 5 pass through compensation capacitors C, respectivelyoAnd each pixel electrode 2 corresponding to the gate line 6. Therefore, the structural design of the array substrate can be simplified, and the reversed phase operational amplifier A is savedoThereby reducing manufacturing difficulty and cost. In the embodiment, an inverting amplifier Ao is disposed at the front end of each row of gate lines 6.
However, the inverting device 4 of the present invention is not limited to the inverting amplifier a shown in fig. 3oIn other embodiments of the present invention, the inverting device 4 may be a gate driving chip, and the input terminal of the gate driving chip is connected to the gate line 6, and the output terminal of the gate driving chip is connected to the compensation capacitor CoConnected so as to provide a voltage of opposite phase change, i.e. from V, through the gate driver chipglChange to Vgh. The concrete implementation is as follows: obtaining the voltage change in the reverse phase of the output voltage change of the grid line in the grid drive chip by the reverse phase operational amplifier, and providing the voltage change in the reverse phase to the compensation capacitor CoTo produce a voltage that can cancel Δ VpDelta ofV′p. Therefore, the output voltage of the pixel electrode is kept stable, and the accuracy of the gray scale display of the pixel is ensured.
In summary, in the array substrate in this embodiment, because the pixel electrode voltage compensation circuit is provided, and the pixel electrode voltage compensation circuit is configured to provide a compensation voltage for the pixel electrode voltage, where the compensation voltage can offset a voltage at which the pixel electrode voltage changes when the thin film transistor changes from an on state to an off state, the compensation voltage offsets the voltage at which the pixel electrode voltage changes to a certain extent, so that the degree of change of the pixel electrode voltage is reduced, and even the pixel electrode voltage does not change, thereby improving the accuracy of the pixel electrode voltage, reducing the flicker of the display panel, and effectively improving the picture quality.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A method for improving the voltage accuracy of a pixel electrode, comprising:
providing a compensation voltage for the pixel electrode voltage, the compensation voltage being capable of counteracting a varying voltage on the pixel electrode.
2. The method according to claim 1, wherein the providing the compensation voltage for the pixel electrode voltage includes:
connecting a compensation capacitor and an inverting device between a grid line and a pixel electrode, wherein the input end of the inverting device is connected with the grid line, the output end of the inverting device is connected with the compensation capacitor, and the compensation capacitor is connected between the output end of the inverting device and the pixel electrode; wherein,
the compensation capacitor is used for generating voltage;
the inverting device is used for inverting the voltage to form a compensation voltage so that the compensation voltage can be offset with the voltage which changes on the pixel electrode.
3. The method according to claim 2, wherein the compensation capacitor has a capacitance equivalent to a parasitic capacitance generated between a gate and the pixel electrode when a thin film transistor connected to the pixel electrode is turned on and off.
4. The method for improving the voltage accuracy of the pixel electrode according to claim 2 or 3, wherein the inverting device is an inverting operational amplifier, an input end of the inverting operational amplifier is connected with the gate line, and an output end of the inverting operational amplifier is connected with the compensation capacitor; or
The inverting device is a grid driving chip, the input end of the grid driving chip is connected with the grid line, and the output end of the grid driving chip is connected with the compensation capacitor.
5. An array substrate comprises a substrate, wherein a grid line is arranged on the substrate, a data line is arranged perpendicular to the grid line, a pixel area is limited between the grid line and the data line, a thin film transistor and a pixel electrode are arranged in the pixel area, the grid electrode of the thin film transistor is connected with the grid line, the source electrode of the thin film transistor is connected with the data line, and the drain electrode of the thin film transistor is connected with the pixel electrode.
6. The array substrate of claim 5, wherein the pixel electrode voltage compensation circuit comprises a compensation capacitor and an inverting device, wherein an input terminal of the inverting device is connected to the gate line, an output terminal of the inverting device is connected to the compensation capacitor, and the compensation capacitor is connected between an output terminal of the inverting device and the pixel electrode.
7. The array substrate of claim 6, wherein the compensation capacitor has a capacitance value corresponding to a parasitic capacitance generated between the gate electrode and the pixel electrode when the thin film transistor is turned on to off.
8. The array substrate of claim 6 or 7, wherein the inverting device is an inverting operational amplifier, an input terminal of the inverting operational amplifier is connected to the gate line, and an output terminal of the inverting operational amplifier is connected to the compensation capacitor.
9. The array substrate of claim 8, wherein the inverting driver is disposed between the gate line and a first pixel electrode corresponding to the gate line, and the inverting driver is connected to output lines parallel to the gate line, and the output lines are electrically connected to the pixel electrodes corresponding to the gate line respectively.
10. The array substrate of claim 6 or 7, wherein the inverting device is a gate driver chip, an input terminal of the gate driver chip is connected to the gate line, and an output terminal of the gate driver chip is connected to the compensation capacitor.
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| CN102183852A (en) * | 2011-05-09 | 2011-09-14 | 深圳市华星光电技术有限公司 | Liquid crystal display |
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| JPWO2020136494A1 (en) * | 2018-12-26 | 2020-07-02 | ||
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Application publication date: 20110427 |