CN103199126A - Graphene-zinc-oxide transparent conducting thin film and preparation method thereof - Google Patents
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Abstract
The invention relates to grapheme-zinc-oxide transparent conducting thin film which can be used for a thin film solar cell and a preparation method of the graphene-zinc-oxide transparent conducting thin film. By mass, the graphene-zinc-oxide transparent conducting thin film is characterized by comprising 0.11-0.80% of carbon atom and 99.2-99.89% of zinc oxide. By utilization of a sol-gel method, graphene-zinc-oxide solution is prepared, and by utilization of the method that the graphene-zinc-oxide solution is coated on a substrate in a repeated spinning mode and oxygen-free heat treatment is carried out, the graphene-zinc-oxide transparent conducting thin film is obtained. Due to the facts that the graphene-zinc-oxide transparent conducting thin film has high light spectrum light transmittance, and the preparation method is simple and easy to operate, the large-area thin film can be easily obtained, has the advantages of being low in cost and suitable for industrialization, and can well serve as transparent conducting glass to be used in the solar thin film cell.
Description
Technical field
The present invention relates to a kind of preparation method of transparent conductive film.Mainly be to adopt sol-gel (Sol-Gel) method, doped graphene is made Graphene-zinc oxide transparent conductive film, at the spectral transmittance that satisfies on the technical requirement bases such as the conductivity of transparent conductive film, mist degree by a relatively large margin its spectral transmittance of raising, especially ultraviolet band.
Background technology
No matter be crystal silicon solar energy battery, or the making of thin-film solar cells all needs to use transparent conducting glass, along with the development with rapid changepl. never-ending changes and improvements of solar cell, transparent conducting glass presents more and more vast market prospect.Meanwhile, transparent conducting glass not only is applied in area of solar cell, also is applied in fields such as flat-panel monitor, hot mirror, transparent surface heating element, flexible luminescent device, radar shielding protection, vehicle glasses.
At present, using relatively widely, transparent conducting glass mainly contains three kinds: ITO(mixes the indium oxide of tin), FTO(mixes the tin oxide of fluorine), AZO(mixes the zinc oxide of aluminium).Though wherein the ito glass light transmission is good, the conductance height, In is very rare at occurring in nature, and the ITO instability, so and non-mainstream transparent conducting glass; FTO glass conductivity is poor slightly, and F has severe toxicity.And AZO glass is easy to realize mixing because abundant raw materials is cheap for manufacturing cost nontoxic, and it is the rapidest to become present development, the transparent conducting glass that prospect is best, but the AZO glass attachment is poor, is easy to deliquescence, restricts its application.
Because Graphene is the carbonaceous material of the tightly packed one-tenth individual layer of carbon atom bi-dimensional cellular shape lattice structure, have many peculiar and excellent performances, as Young's modulus (about 1100 GPa), thermal conductivity (about 5000 J/ (mKs)), carrier mobility (2 * 105cm
2/ (Vs)) and specific area (calculated value 2630 m
2/ g), light transmission etc. are all than higher.Particularly as simple substance, at room temperature electronic motion speed has reached 1/300 of the light velocity, and is all faster than known conductor.
Can utilize high light transmittance and the conductivity of Graphene, prepare a kind of conductive film of doped graphene as transparent conducting glass, in the hope of reaching even be better than the photoelectric properties of AZO glass.In addition, current zinc-oxide film mainly adopts device, methods such as chemical vapour deposition technique, magnetron sputtering method and sol-gel process.
Summary of the invention
At above situation, the invention provides a kind of Graphene-zinc oxide transparent conductive film that can be used for solar film battery and preparation method thereof.The carbon atom of this Graphene-zinc oxide transparent conductive film is present in Graphene-zinc oxide conductive film with the form of Graphene, its mass fraction is 0.11%-0.80%, the mass fraction of zinc oxide is 99.2%-99.89%, high light transmittance and the conductivity of Graphene have effectively been utilized, especially the spectral transmittance of ultraviolet band, can reach even be better than mixing the photoelectric properties of zinc oxide (AZO) glass of aluminium, adopt solution-gel method to prepare Graphene-zinc oxide (Graphene Zinc Oxide, GZO) film, it is simple to have method, needing no vacuum equipment, characteristics such as energy consumption is low are expected at various substrate preparation large tracts of land GZO films.
The present invention can use following scheme to achieve these goals:
The invention provides a kind of Graphene-zinc oxide transparent conductive film that can be used for solar film battery, it is characterized in that, have: Graphene and zinc oxide, the mass fraction of Graphene can be 0.11%-0.80%, the mass fraction of zinc oxide can be 99.2%-99.89%.
Preparation method's method of Graphene-zinc oxide transparent conductive film involved in the present invention, it is characterized in that, specifically may further comprise the steps: (1) puts into EGME with the graphene oxide powder, per 1 gram graphene oxide powder is joined 5-10 milliliter EGME, ultrasonic 0.5-3 hour, obtain graphene oxide solution; (2) Zinc diacetate dihydrate is dissolved in EGME, every 0.303-0.456 mole Zinc diacetate dihydrate is dissolved in 1 liter of EGME, stirring makes its dissolving, the monoethanolamine of molal quantitys such as adding and two hydration zinc acetates obtains the zinc oxide colloidal solution of transparent homogeneous in abundant stirring under 50 ℃-100 ℃ the constant temperature after 1 hour again; (3) be that the ratio of 1:0.01-0.33 is mixed with zinc oxide colloidal solution and graphene oxide solution according to the mass ratio of carbon atom in zinc oxide in the zinc oxide colloidal solution and the Graphene solution, obtain graphene oxide-burnett's solution, stirring mixes graphene oxide-burnett's solution, add excessive hydrazine hydrate then as the graphene oxide in reducing agent redox graphene-burnett's solution, whenever graphene oxide-the burnett's solution that contains the graphene oxide of 1 gram need add 2-3 milliliter hydrazine hydrate, obtains Graphene-burnett's solution; (4) Graphene-zinc oxide colloidal solution is made carry out the spin coating plated film, drip Graphene-zinc oxide colloidal solution at cleaned ground substrate in advance, use the spin coating instrument earlier at 500-800 revolutions per second, the back repeats evenly to be coated in substrate in the mode of spin coating Graphene-zinc oxide colloidal solution at 2000-3000 revolutions per second, with substrate in 100 ℃-200 ℃ insulating box pre-burning 10-20 minute earlier, take out then and be placed on room temperature to 80 ℃ cooling number minute; (5) process of repeating step (4) is 5-20 times, obtains the heat treatment that Graphene-zinc oxide transparent conductive film was annealed 3 hours under nitrogen environment to Graphene-zinc oxide transparent conductive film again.
The invention effect
Graphene-zinc oxide transparent conductive film provided by the present invention and method thereof have: Graphene and zinc oxide, the mass fraction of Graphene are 0.11%-0.80%, and the mass fraction of zinc oxide is 99.2%-99.89%.Can utilize conductivity and the high spectral transmittance of Graphene, particularly the light transmittance at ultraviolet spectra makes Graphene-zinc oxide transparent conductive film can reach even be better than mixing the photoelectric properties of the zinc oxide of aluminium (AZO) glass.The method that makes Graphene-zinc oxide transparent conductive film is to make Graphene-burnett's solution earlier according to solution-gel method, this solution is spun on substrate repeatedly and the heat treated mode of anaerobic obtains Graphene-zinc oxide transparent conductive film, it is simple to have method, characteristics such as needing no vacuum equipment, energy consumption are low are expected at various substrates preparation large tracts of land Graphenes-zinc oxide conductive film (GZO) film.
Description of drawings
Fig. 1 Graphene-zinc oxide transparent conductive film is as the structural representation of the Window layer of new dye sensitization battery.
Fig. 2 is the preparation flow figure of graphene oxide solution.
Fig. 3 is the preparation flow figure of zinc oxide (zinc oxide) colloidal solution.
Fig. 4 is the preparation flow figure of Graphene-zinc oxide colloidal solution.
Fig. 5 is that Graphene-zinc oxide colloidal solution is to Graphene-zinc oxide transparent conductive film preparation flow figure.
Fig. 6 is preparation method's the flow chart that mixes the Graphene-zinc oxide transparent conductive film of Graphene.
Fig. 7 is the CIGS(Copper Indium Gallium Selenide) structural representation of solar cell.
Specific embodiment
Below in conjunction with accompanying drawing the preparation method's of a kind of conductive film that mixes Graphene involved in the present invention preferred embodiment is done to elaborate, but the present invention is not limited in this embodiment.Understand for the public is had completely the present invention, in the following preferred embodiment of the present invention, describe in detail with regard to concrete details.
Embodiment 1:
Fig. 1 is preparation method's the flow chart that mixes the Graphene-zinc oxide transparent conductive film of Graphene.
As shown in Figure 1, have following steps:
Step S1-1:
Preparation graphene oxide solution.
Step S1-2:
Preparation zinc oxide (zinc oxide) colloidal solution.
Step S1-3:
Preparation Graphene-zinc oxide colloidal solution.
Step S1-4:
Preparation Graphene-zinc oxide transparent conductive film.
Fig. 2 is the preparation flow figure of graphene oxide solution.
As shown in Figure 2, have following steps:
Step S1-101:
The graphene oxide powder is put into EGME, and per 1 gram graphene oxide powder is joined 5-10 milliliter EGME.
Step S1-102:
To this solution ultrasonic 3 hours, obtain graphene oxide solution.
Fig. 3 is the preparation flow figure of zinc oxide (zinc oxide) colloidal solution.
As shown in Figure 3, have following steps:
Step S1-201:
Zinc diacetate dihydrate is dissolved in a certain amount of EGME, is dissolved in 1 liter of EGME by every 0.303-0.456 mole Zinc diacetate dihydrate, stirring is fully dissolved it.
Step S1-202:
Add and the equimolar monoethanolamine of two hydration zinc acetates.
Step S1-203:
After 80 ℃ of constant temperature fully stir 1 hour, form the solution of transparent homogeneous, obtain zinc oxide colloidal solution.
Fig. 4 is the preparation flow figure of Graphene-zinc oxide colloidal solution.
As shown in Figure 4, have following steps:
Step S1-301:
In zinc oxide colloidal solution, add graphene oxide solution, be that the ratio of 1:0.01-0.33 is mixed according to the mass ratio of carbon atom in zinc oxide in the zinc oxide colloidal solution and the Graphene solution, stirring mixes it, obtains graphene oxide-burnett's solution.
Step S1-302:
In graphene oxide-burnett's solution, add excess hydrazine hydrate, according to adding 2-3 milliliter hydrazine hydrate in the graphene oxide-burnett's solution of the graphene oxide that whenever contains 1 gram, namely obtain Graphene-zinc oxide colloidal solution.
Fig. 5 is that Graphene-zinc oxide colloidal solution is to Graphene-zinc oxide transparent conductive film preparation flow figure.
As shown in Figure 5, have following steps:
Step S1-401:
Drip Graphene-burnett's solution in cleaned in advance glass substrate.
Step S1-402:
Use the spin coating instrument, spin coating is 20 seconds under 40 seconds, 2000 revolutions per seconds rotating speeds of spin coating under 600 revolutions per seconds of rotating speeds, and colloidal solution evenly is coated on the substrate, and this substrate is quartz plate in the present embodiment.
Step S1-403:
With film pre-burning 10 minutes in 100 ℃ constant temperature oven, at room temperature cooled off after the taking-up 5 minutes.
Step S1-404:
Judge whether Graphene-zinc oxide transparent conductive film is coated on substrate through spin coating colloidal solution, then in the total pre-burning of constant temperature oven, whether take out the number of times of room temperature cooling more than or equal to 20 times.If the number of times of this process less than 20 times, is then got back to step S1-402, continue to use the spin coating instrument that colloidal solution is covered on the quartz plate substrate uniformly; If this process more than or equal to 20 times, is then carried out next step.
Step S1-405:
Will be through annealing under the Graphene-zinc oxide transparent conductive film nitrogen atmosphere of pre-burning-cooling processing 3 hours.
Then can obtain the zinc oxide transparent conductive film of doped graphene through above step, with its Window layer as new dye sensitization battery, the mass fraction of Graphene can be 0.11%-0.80% in this Graphene-zinc oxide transparent conductive film, and the mass fraction of zinc oxide can be 99.2%-99.89%.
Fig. 6 is that Graphene-zinc oxide transparent conductive film is as the structural representation of the Window layer of new dye sensitization battery.
As shown in Figure 6, the structure of new dye sensitization battery 10 is made up of 7 layer films, is respectively glassy layer 11, and the layer glass layer is positioned at the upper and lower outer surface of dye-sensitized cell 10.Two-layer GZO(Graphene-zinc oxide) Window layer 12 is folded mutually with glassy layer 11.Pt (platinum) layer 13 has two-layer, and is folded mutually with GZO Window layer 12.Dye sensitization TiO
2Layer 14 has one deck, with the two-layer Pt layer folded centre that is positioned at 7 layer films of dye-sensitized cell 10 mutually.Because high light transmittance and the conductivity of Graphene, preparation Graphene-zinc-oxide film is used as transparent conducting glass in this new dye sensitization battery, have the excellent new energy of photoelectricity.
Embodiment 2:
Fig. 7 is the CIGS(Copper Indium Gallium Selenide) structural representation of solar cell.
As shown in Figure 7, CIGS solar cell 20 is by Al electrode 21, GZO (Graphene-tin oxide) Window layer 22, i-zinc oxide (intrinsic tin oxide) film 23, CdS thin layer 24, Cu (InGa) Se
2(CIGS Copper Indium Gallium Selenide) absorbed layer 25, the Mo(molybdenum) electrode 26 and glass substrate 27, be laminated by methods such as whole plating, magnetron sputterings.Wherein, Graphene-zinc oxide transparent conductive film 22 is as the Window layer of Copper Indium Gallium Selenide (CIGS) thin film solar cell.At first use magnetron sputtering method at the glass substrate 27 growth Mo electrodes 26 of cleaning, use the high vacuum electron beam thermal evaporation then, priority evaporation CIGS absorbed layer 25 and CdS film 24, then use magnetron sputtering method growth intrinsic zinc-oxide film 23, with this moment the CIGS battery that obtains semi-finished product as backing material, use the spin coating instrument, utilize the Graphene-zinc oxide transparent conductive film that obtains to step S1-4 from step S1-1 among the embodiment 1.
Then can obtain one layer graphene-zinc oxide transparent conductive film at the intrinsic zinc-oxide film of CIGS hull cell through above step, as the Window layer of CIGS hull cell, produce novel C IGS thin film solar cell.
The effect of specific embodiment and effect
According to the related new dye sensitization battery of specific embodiment and (CIGS) copper indium gallium selenium solar cell, because its Window layer has been used Graphene-zinc oxide transparent conductive film, mass fraction in conductive film is respectively 0.11%-0.80% and 99.2%-99.89% has conductivity and wideer spectral transmittance preferably when Graphene and zinc oxide, particularly at ultraviolet wave band well behaved spectral transmittance is arranged, than the conductive film of Al-Doped ZnO better photoelectric properties are arranged.
The method for preparing Graphene-zinc oxide conductive film is that solution-gel method obtains Graphene-zinc oxide colloidal solution, utilize the spin coating instrument to be spin-coated on Graphene-zinc oxide colloidal solution on the substrate repeatedly then, and use the insulating box pre-burning repeatedly, take out then in the environment of room temperature and cool off.Characteristics such as utilize the heat treated mode of anaerobic to obtain Graphene-zinc oxide transparent conductive film at last, it is simple to have method, and needing no vacuum equipment, energy consumption are low, and be expected at various substrates preparation large tracts of land Graphene-zinc oxide transparent conductive films.
Claims (2)
1. Graphene-zinc oxide transparent conductive film that can be used for solar film battery, it is characterized in that having: Graphene and zinc oxide, the mass fraction of described Graphene are 0.11%-0.80%, the mass fraction of described zinc oxide is 99.2%-99.89%.
2. a method for preparing the described Graphene-zinc oxide transparent conductive film of claim 1 is characterized in that, specifically may further comprise the steps:
(1) put into EGME with the graphene oxide powder, per 1 gram graphene oxide powder is joined 5-10 milliliter EGME, ultrasonic 0.5-3 hour, obtains graphene oxide solution;
(2) Zinc diacetate dihydrate is dissolved in EGME, every 0.303-0.456 mole Zinc diacetate dihydrate is dissolved in 1 liter of EGME, stirring makes its dissolving, the monoethanolamine of molal quantitys such as adding and two hydration zinc acetates obtains the zinc oxide colloidal solution of transparent homogeneous in abundant stirring under 50 ℃-100 ℃ the constant temperature after 1 hour again;
(3) be that the ratio of 1:0.01-0.33 is mixed with described zinc oxide colloidal solution and described graphene oxide solution according to the mass ratio of carbon atom in zinc oxide in the described zinc oxide colloidal solution and the described graphene oxide solution, obtain graphene oxide-burnett's solution, stirring mixes described graphene oxide-burnett's solution, add excessive hydrazine hydrate then and reduce graphene oxide in described graphene oxide-burnett's solution as reducing agent, whenever the described graphene oxide-burnett's solution that contains the graphene oxide of 1 gram need add the described hydrazine hydrate of 2-3 milliliter, obtains Graphene-burnett's solution;
(4) described Graphene-zinc oxide colloidal solution is made carry out the spin coating plated film, at the described Graphene-zinc oxide colloidal solution of cleaned ground substrate dropping in advance, use the spin coating instrument earlier at 500-800 revolutions per second, the back repeats the mode of described Graphene-zinc oxide colloidal solution with spin coating evenly is coated on the described substrate at 2000-3000 revolutions per second, with described substrate in 100 ℃-200 ℃ insulating box pre-burning 10-20 minute earlier, take out then and be placed on room temperature to 80 ℃ cooling number minute;
(5) process of repeating step (4) is 5-20 times, and 3 hours heat treatment of annealing obtains Graphene-zinc oxide transparent conductive film under nitrogen environment.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104319320A (en) * | 2014-10-31 | 2015-01-28 | 广东德力光电有限公司 | LED chip of novel composite transparent electrode and manufacturing method of LED chip |
| CN104992778A (en) * | 2015-04-17 | 2015-10-21 | 北京天恒盛通科技发展有限公司 | Method for preparing flexible transparent conductive electrode |
| CN105244390A (en) * | 2015-10-29 | 2016-01-13 | 上海师范大学 | Multi-quantum well photovoltaic battery based on nanometer graphite electron transmission layer, and preparation method thereof |
| CN106044845A (en) * | 2016-05-26 | 2016-10-26 | 中国科学院合肥物质科学研究院 | Graphene oxide modified orderly porous zinc oxide composite film and preparation method thereof |
| CN107464599A (en) * | 2017-08-25 | 2017-12-12 | 北京工业大学 | A kind of graphene doping transparent conductive oxide film of amorphous nano crystalline substance composite construction and preparation method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102568654A (en) * | 2010-12-13 | 2012-07-11 | 国家纳米科学中心 | Transparent conductive film and preparation method of transparent conductive film |
| WO2013022051A1 (en) * | 2011-08-08 | 2013-02-14 | 味の素株式会社 | Porous structure and method for producing same |
| CN102945757A (en) * | 2012-11-29 | 2013-02-27 | 东南大学 | ZnO/graphene compound nano structure photo-anode for dye-sensitized solar cell and manufacture method of ZnO/graphene compound nano structure photo-anode |
| US20130048349A1 (en) * | 2011-08-31 | 2013-02-28 | Shih Hua Technology Ltd. | Transparent conductive film and touch panel using the same |
-
2013
- 2013-03-19 CN CN2013100883109A patent/CN103199126A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102568654A (en) * | 2010-12-13 | 2012-07-11 | 国家纳米科学中心 | Transparent conductive film and preparation method of transparent conductive film |
| WO2013022051A1 (en) * | 2011-08-08 | 2013-02-14 | 味の素株式会社 | Porous structure and method for producing same |
| US20130048349A1 (en) * | 2011-08-31 | 2013-02-28 | Shih Hua Technology Ltd. | Transparent conductive film and touch panel using the same |
| CN102945757A (en) * | 2012-11-29 | 2013-02-27 | 东南大学 | ZnO/graphene compound nano structure photo-anode for dye-sensitized solar cell and manufacture method of ZnO/graphene compound nano structure photo-anode |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104319320A (en) * | 2014-10-31 | 2015-01-28 | 广东德力光电有限公司 | LED chip of novel composite transparent electrode and manufacturing method of LED chip |
| CN104319320B (en) * | 2014-10-31 | 2018-06-22 | 广东德力光电有限公司 | A kind of LED chip with composite transparent electrode and preparation method thereof |
| CN104992778A (en) * | 2015-04-17 | 2015-10-21 | 北京天恒盛通科技发展有限公司 | Method for preparing flexible transparent conductive electrode |
| CN105244390A (en) * | 2015-10-29 | 2016-01-13 | 上海师范大学 | Multi-quantum well photovoltaic battery based on nanometer graphite electron transmission layer, and preparation method thereof |
| CN106044845A (en) * | 2016-05-26 | 2016-10-26 | 中国科学院合肥物质科学研究院 | Graphene oxide modified orderly porous zinc oxide composite film and preparation method thereof |
| CN108091714A (en) * | 2016-11-17 | 2018-05-29 | Lg电子株式会社 | Solar panel |
| US11757058B2 (en) | 2016-11-17 | 2023-09-12 | Shangrao Jinko Solar Technology Development Co Ltd | Solar cell panel |
| CN108091714B (en) * | 2016-11-17 | 2020-12-08 | Lg电子株式会社 | solar panel |
| CN107464599B (en) * | 2017-08-25 | 2019-06-18 | 北京工业大学 | A kind of amorphous-nanocrystalline composite structure graphene-doped transparent conductive oxide film and preparation method thereof |
| CN107464599A (en) * | 2017-08-25 | 2017-12-12 | 北京工业大学 | A kind of graphene doping transparent conductive oxide film of amorphous nano crystalline substance composite construction and preparation method thereof |
| CN108165956A (en) * | 2017-12-29 | 2018-06-15 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of preparation method for the AZO laminated films for adding graphene |
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| CN109360691A (en) * | 2018-11-19 | 2019-02-19 | 天津市职业大学 | A kind of preparation method of doped zinc oxide transparent conductive film |
| CN110444622A (en) * | 2019-06-26 | 2019-11-12 | 北京铂阳顶荣光伏科技有限公司 | The preparation method of thin-film solar cells Window layer |
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Application publication date: 20130710 |