CN103171186B - Laminated type assembly used for plasma reaction chamber and manufacture method - Google Patents
Laminated type assembly used for plasma reaction chamber and manufacture method Download PDFInfo
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- CN103171186B CN103171186B CN201110431022.XA CN201110431022A CN103171186B CN 103171186 B CN103171186 B CN 103171186B CN 201110431022 A CN201110431022 A CN 201110431022A CN 103171186 B CN103171186 B CN 103171186B
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- type assembly
- described part
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- binder course
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 15
- 239000013536 elastomeric material Substances 0.000 claims abstract description 8
- 239000011230 binding agent Substances 0.000 claims description 61
- 239000000203 mixture Substances 0.000 claims description 28
- 239000007921 spray Substances 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000000712 assembly Effects 0.000 claims description 2
- 238000000429 assembly Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 239000013528 metallic particle Substances 0.000 description 2
- 238000012163 sequencing technique Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The invention provides a manufacture method for a laminated type assembly used for a plasma reaction chamber, which comprises the following steps: providing a first part having at least one adjoining plane; providing a second part having at least one adjoining plane cooperated with the adjoining plane of the first part; applying a layer of hard first binding layer on the adjoining plane of the first part; applying a second binding layer prepared by an elastomeric material on the adjoining plane of the first part; and forming the laminated type assembly comprising the first part and the second part, thereby the first binding layer and the second binding layer combines each adjoining plane of the first part and the second part. The invention also provides the laminated type assembly prepared by the above manufacture method, and a plasma reaction chamber of the laminated type assembly. The laminated type assembly has the advantages of better thermal conductivity and higher compactness.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of cascade type assembly for plasma reaction chamber and manufacture method thereof.
Background technology
The sub-reative cell of plasma has many cascade type assemblies, and cascade type assembly needs stacked together according to various mode at least two parts.
The present invention is exactly to seek a kind of efficient low-consume, and don't affects the manufacture method of cascade type assembly function.
Summary of the invention
For the problems referred to above in background technology, the present invention proposes a kind of cascade type assembly for plasma reaction chamber and manufacture method thereof.
First aspect present invention provides the manufacture method of a kind of manufacture for the cascade type assembly of plasma-reaction-chamber, and wherein, described manufacture method comprises the steps:
A Part I with at least one composition surface is provided;
A Part II with the composition surface that at least one coordinates with the described composition surface of described Part I is provided;
The composition surface of described Part I applies rigid first binder course of one deck;
Described first binder course applies the second binder course that one deck is made up of elastomeric material;
Formed and comprise the cascade type assembly of described Part I and described Part II, make described first binder course and described second binder course in conjunction with each composition surface of described Part I and described Part II.
Further, described first binder course is made of metal.
Further, described first binder course is that metallic aluminium is made.
Wherein, described second binder course comprises conductive material, for providing the conductive path between described Part I and described Part II.
Alternatively, the composition surface of described Part I adopts binder course described in PVD, CVD or the deposit of evaporation electroplating technology.
Further, described manufacture method also comprises the steps: to apply a power to described Part II, is combined closely in the first binder course be positioned on described Part I and the second binder course in its composition surface.
Wherein, described cascade type assembly comprises gas spray, and wherein, described Part I comprises the header board of the top electrode for serving as described plasma reaction chamber, and described Part II comprises the rear plate for serving as installing plate and Electrode connection.
Wherein, described cascade type assembly comprises top ground loop, and wherein, described Part I comprises the header board serving as top earth electrode, and described Part II comprises the rear plate for serving as installing plate and grounding connection.
Second aspect present invention provides a kind of cascade type assembly for plasma-reaction-chamber, and wherein, the manufacture method that described cascade type assembly provides according to first aspect present invention is made.
Wherein, described cascade type assembly comprises gas spray, and wherein, described Part I comprises the header board of the top electrode for serving as described plasma reaction chamber, and described Part II comprises the rear plate for serving as installing plate and Electrode connection.
Wherein, described cascade type assembly comprises top ground loop, and wherein, described Part I comprises the header board serving as top earth electrode, and described Part II comprises the rear plate for serving as installing plate and grounding connection.
Third aspect present invention provides a kind of plasma-reaction-chamber, and wherein, described plasma-reaction-chamber comprises the cascade type assembly provided according to a second aspect of the present invention.
Wherein, described cascade type assembly comprises gas spray, and wherein, described Part I comprises the header board of the top electrode for serving as described plasma reaction chamber, and described Part II comprises the rear plate for serving as installing plate and Electrode connection.
Wherein, described cascade type assembly comprises top ground loop, and wherein, described Part I comprises the header board serving as top earth electrode, and described Part II comprises the rear plate for serving as installing plate and grounding connection.
Because the present invention adopts Part I and the Part II of the first rigid binder course and flexible second binder course binder course stack-type assembly, make described cascade type assembly density better, thermal conductivity is better.
Accompanying drawing explanation
Fig. 1 is the structural representation of plasma processing apparatus;
Fig. 2 is the gas spray of plasma processing apparatus and the structural representation of top ground loop;
Fig. 3 is the flow chart of steps of the cascade type assembly manufacture method for plasma processing apparatus of the first specific embodiment of the present invention;
Fig. 4 a ~ 4d is the cascade type assembly manufacture method schematic diagram for plasma processing apparatus of the first specific embodiment of the present invention;
Fig. 5 is the flow chart of steps of the cascade type assembly manufacture method for plasma processing apparatus of the second specific embodiment of the present invention;
Fig. 6 is the structural representation of the cascade type assembly for plasma processing apparatus of the second specific embodiment of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
Fig. 1 is the structural representation of plasma processing apparatus.Plasma-reaction-chamber comprises a chamber, wherein, is provided with a processing procedure district.Process gas and other assist gas enter from chamber roof, and RF energy is connected to bottom electrode, and provides energy excite in processing procedure district and produce plasma, make it carry out various physics or chemical reaction with substrate wherein, thus complete predetermined processing procedure.Wherein, be also provided with a vavuum pump, extract out beyond chamber for the foreign gas by processing procedure redundancy etc.Wherein, described plasma-reaction-chamber also comprises one and is positioned at the gas spray 1 at described top and is positioned at the top ground loop (upper ground ring) 2 of described gas spray (showerhead) 1 periphery.
Fig. 2 shows the gas spray of plasma processing apparatus and the structural representation of top ground loop.As shown in Figure 2, gas spray 1 has certain thickness disc-shaped component, is wherein provided with several through holes 11, for input in reative cell and injection reacting gas.Described through hole 11 is formed through ultrasonic drilling by the conducting base be prepared into, it can be the through hole of linear uniform pore diameter, it also can be the through hole of non-uniform holes, and such as, through hole 11 has the less bottom in larger upper end, aperture and aperture.Be to be understood that, described through hole 11 also can be manufactured into other various non-uniform holes shape: such as up big and down small conical through-hole, or up-small and down-big back taper through hole, also can be the through hole that there is one section of smaller aperture due the same and centre, upper and lower aperture, can also be through hole of the same or different nonlinearity (bending) in upper and lower aperture etc.As shown in Figure 2, composition graphs 1, is also provided with a top ground loop 2 around gas spray 1, and it is for play a supportive role to gas spray 1 or for strengthening gas spray horizontal area to improve the uniformity of plasma etching.Gas spray 1, except passing into except gas to reaction cavity, is also used as electrode and radio-frequency channel.
Fig. 3 shows the flow chart of steps of the cascade type assembly manufacture method for plasma processing apparatus according to the first specific embodiment of the present invention, and Fig. 4 shows the cascade type assembly manufacture method schematic diagram for plasma processing apparatus according to the first specific embodiment of the present invention.Below for gas spray, by reference to the accompanying drawings 3 and accompanying drawing 4, the present invention will be described.It will be appreciated by those skilled in the art that gas spray at least comprises and discoidally has certain thickness two parts and be laminated, be i.e. front and rear panels.Wherein, described header board is made up of silicon or carborundum typically, for serving as the top electrode of plasma processing apparatus; Described rear plate is made up of aluminium alloy typically, for serving as installing plate and electrode connecting plate.
First aspect present invention provides the manufacture method of a kind of manufacture for the cascade type assembly of plasma reaction chamber, and described manufacture method comprises the steps:
First, perform step S11, see Fig. 4 a, provide a header board 14 with at least one the first composition surface 14a, it is typically made up of silicon or carborundum, for serving as the top electrode of plasma processing apparatus;
Further, perform step S12, a rear plate 12 with the second composition surface 12a that at least one coordinates with the described first composition surface 14a of described header board 14 is provided.Described rear plate 12 is for serving as installing plate and electrode connecting plate.
It should be noted that, although exemplarily perform S12 again according to first performing step S11 in the present embodiment, be to be understood that, perform the ordinal relation that step S11 and S12 is not concrete, also can first perform step S12 and perform step S11 again, also can perform step S11 and step S12, uninevitable sequencing between the two simultaneously.Meanwhile, due to manufacture method and the structure existing ripe technical support in the prior art thereof of front and rear panels, for simplicity's sake, do not repeating at this.
Then, perform step S13, see Fig. 4 b, the first composition surface 14a of header board 14 applies the first binder course 13 that one deck is rigid.Typically, can binder course 13 described in PVD, CVD or evaporation electroplating technology deposit in the first faying face 14a of described header board 14.
Further, described first binder course 13 is made of metal.Typically, described binder course 13 is that metallic aluminium is made.
Then, perform step S14, with reference to Fig. 4 c, described first binder course 13 applies the second binder course 15, and wherein, described second binder course 15 is made up of elastomeric material.Wherein said elastomeric material is selected from polymeric material, such as poly-copper, organosilicon etc.
Further, described second binder course 15 comprises conductive material, for providing the conductive path between described Part I and described Part II.Wherein, described conductive material comprises metallic particles, such as aluminum or aluminum alloy.
Particularly, described second binder course can be coated on described first binder course by methods such as obliterating, brushing, sprayings, even comprises follow-up densified and solidify the step etc. of described second binder course.Due to said method existing ripe technical support in the prior art, for simplicity's sake, repeat no more.
Then, perform step S15, see Fig. 4 d, formed and comprise the gas spray 1 of described header board 14 and rear plate 12, make described binder course 13 in conjunction with each composition surface of described header board 14 and rear plate 12.Particularly, a downward power can be applied to described rear plate 12, its second composition surface 12a is combined closely in being positioned at the first binder course 13 and the second binder course 15 on described header board 14.
Finally, perform step S16, assembly by above-mentioned steps gained is cooled to room temperature, again thereon through ultrasonic drilling formed successively through described header board 14, binder course 13 and described after several through holes 11 of plate 12, namely obtain and comprise header board 14 and rear plate 12, and by the gas spray 1 of binder course 13 in conjunction with described header board 14 and rear plate 12.
According to a change case of the present invention, with reference to Fig. 5 and Fig. 6, then composition graphs 1 and Fig. 2, this manufacture method can also be applied to the upper portion insulating ring 2 being positioned at gas spray 1 periphery, the manufacture method of its manufacture method and gas spray 1 is similar, wherein, comprises the steps:
First, perform step S21, provide a header board 24 with at least one the first composition surface 24a, it is typically made up of silicon or carborundum, and it can be full wafer, the annulus that also can be made up of several silicon or carborundum.Described header board 24 is for serving as the top earth electrode of plasma processing apparatus.
Further, perform step S22, a rear plate 22 with the second composition surface 22a that at least one coordinates with the described first composition surface 24a of described header board 24 is provided.Described rear plate 22 is made up of aluminium alloy, for serving as connecting plate and earth lug.
It should be noted that, although exemplarily perform S22 again according to first performing step S21 in the present embodiment, be to be understood that, perform the ordinal relation that step S21 and S22 is not concrete, also can first perform step S22 and perform step S21 again, also can perform step S21 and step S22, uninevitable sequencing between the two simultaneously.Meanwhile, due to manufacture method and the structure existing ripe technical support in the prior art thereof of front and rear panels, for simplicity's sake, do not repeating at this.
Then, perform step S23, the first composition surface 24a of header board 24 applies the first binder course 23 that one deck is rigid.Typically, can binder course 13 described in PVD, CVD or evaporation electroplating technology deposit in the first faying face 24a of described header board 24.
Further, described first binder course 23 is made of metal.Typically, described first binder course 23 is that metallic aluminium is made.
Wherein, the Thickness scope of described first binder course 23 is 0.1mm ~ 2mm.
Then, perform step S24, with reference to Fig. 4 c, described first binder course 13 applies the second binder course 15, and wherein, described second binder course 25 is made up of elastomeric material.Wherein said elastomeric material is selected from polymeric material, such as poly-copper, organosilicon etc.Wherein, the Thickness scope of described second binder course 25 is 0.1mm ~ 2mm.
Further, described second binder course 15 comprises conductive material, for providing the conductive path between described Part I and described Part II.Wherein, described conductive material comprises metallic particles, such as aluminum or aluminum alloy.
Particularly, described second binder course can be coated on described first binder course by methods such as obliterating, brushing, sprayings, even comprises follow-up densified and solidify the step etc. of described second binder course.Due to said method existing ripe technical support in the prior art, for simplicity's sake, repeat no more.Then, perform step S25, see Fig. 6, formed and comprise the top ground loop 2 of described header board 24 and rear plate 22, make described binder course 23 in conjunction with each composition surface of described header board 24 and rear plate 22.Particularly, a downward power can be applied to described rear plate 22, its second composition surface 22a is combined closely in being positioned at the binder course 23 on described header board 24.
Finally, be cooled to room temperature, namely obtain top ground loop 2.
Second aspect present invention additionally provides a kind of cascade type assembly for plasma-reaction-chamber, and wherein, described cascade type assembly is made according to aforesaid manufacture method.
Typically described cascade type assembly is a gas spray or a top ground loop.
Third aspect present invention additionally provides a kind of plasma-reaction-chamber, and wherein, described plasma-reaction-chamber comprises aforesaid cascade type assembly.
The present invention adopts Part I and the Part II of the binder course stack-type assembly of the first rigid binder course and elastomeric material.Because the material of the first rigid binder course and Part I all comprises aluminium, both material types seemingly, because heat conduction well can be lowered the temperature sooner in the link of cooling stack-type assembly.And, because the present invention makes material finer and close owing to have employed rigid binder course, make the not easily deformation of described cascade type assembly, not easily there is physics or chemical change in binder course in processing procedure process, such that the cascade type assembly made is more stable, reliability is strong.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (14)
1. manufacture a manufacture method for the cascade type assembly being used for plasma-reaction-chamber, it is characterized in that, described manufacture method comprises the steps:
A Part I with at least one composition surface is provided;
A Part II with the composition surface that at least one coordinates with the described composition surface of described Part I is provided;
The composition surface of described Part I applies rigid first binder course of one deck;
Described first binder course applies the second binder course that one deck is made up of elastomeric material;
Formed and comprise the cascade type assembly of described Part I and described Part II, make described first binder course and described second binder course in conjunction with each composition surface of described Part I and described Part II.
2. manufacture method according to claim 1, is characterized in that, described first binder course is made of metal.
3. manufacture method according to claim 2, is characterized in that, described first binder course is that metallic aluminium is made.
4. manufacture method according to claim 3, is characterized in that, described second binder course comprises conductive material, for providing the conductive path between described Part I and described Part II.
5. manufacture method according to claim 4, is characterized in that, the composition surface of described Part I adopts binder course described in PVD, CVD or the deposit of evaporation electroplating technology.
6. manufacture method according to claim 5, is characterized in that, described manufacture method also comprises the steps:
Apply a power to described Part II, combined closely in the first binder course be positioned on described Part I and the second binder course in its composition surface.
7. the manufacture method according to any one of claim 1 to 6, it is characterized in that, described cascade type assembly is gas spray, wherein, described Part I comprises the header board of the top electrode for serving as described plasma reaction chamber, and described Part II comprises the rear plate for serving as installing plate and Electrode connection.
8. the manufacture method according to any one of claim 1 to 6, it is characterized in that, described cascade type assembly is top ground loop, wherein, described Part I comprises the header board serving as top earth electrode, and described Part II comprises the rear plate for serving as installing plate and grounding connection.
9. for a cascade type assembly for plasma-reaction-chamber, it is characterized in that, described cascade type assembly is made according to the manufacture method described in any one of claim 1 to 6.
10. cascade type assembly according to claim 9, it is characterized in that, described cascade type assembly is gas spray, wherein, described Part I comprises the header board of the top electrode for serving as described plasma reaction chamber, and described Part II comprises the rear plate for serving as installing plate and Electrode connection.
11. cascade type assemblies according to claim 9, it is characterized in that, described cascade type assembly is top ground loop, wherein, described Part I comprises the header board serving as top earth electrode, and described Part II comprises the rear plate for serving as installing plate and grounding connection.
12. 1 kinds of plasma-reaction-chambers, is characterized in that, described plasma-reaction-chamber comprises the cascade type assembly according to any one of claim 1 to 6.
13. plasma-reaction-chambers according to claim 12, it is characterized in that, described cascade type assembly is gas spray, wherein, described Part I comprises the header board of the top electrode for serving as described plasma reaction chamber, and described Part II comprises the rear plate for serving as installing plate and Electrode connection.
14. plasma-reaction-chambers according to claim 12, it is characterized in that, described cascade type assembly is top ground loop, wherein, described Part I comprises the header board serving as top earth electrode, and described Part II comprises the rear plate for serving as installing plate and grounding connection.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110431022.XA CN103171186B (en) | 2011-12-20 | 2011-12-20 | Laminated type assembly used for plasma reaction chamber and manufacture method |
| TW101143559A TWI553814B (en) | 2011-12-20 | 2012-11-21 | A multilayer element for a plasma reaction chamber and a method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110431022.XA CN103171186B (en) | 2011-12-20 | 2011-12-20 | Laminated type assembly used for plasma reaction chamber and manufacture method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103171186A CN103171186A (en) | 2013-06-26 |
| CN103171186B true CN103171186B (en) | 2015-06-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201110431022.XA Active CN103171186B (en) | 2011-12-20 | 2011-12-20 | Laminated type assembly used for plasma reaction chamber and manufacture method |
Country Status (2)
| Country | Link |
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| CN (1) | CN103171186B (en) |
| TW (1) | TWI553814B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952678A (en) * | 2014-03-28 | 2015-09-30 | 中微半导体设备(上海)有限公司 | Electrode assembly for plasma processing, and manufacturing method therefor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1501763A (en) * | 2002-11-14 | 2004-06-02 | 友达光电股份有限公司 | Plasma treatment device |
| CN1828825A (en) * | 2005-03-02 | 2006-09-06 | 东京毅力科创株式会社 | Gas supply member and plasma processing apparatus |
| CN101150909A (en) * | 2006-09-22 | 2008-03-26 | 中微半导体设备(上海)有限公司 | Plasm restraint device |
| CN201681788U (en) * | 2010-04-02 | 2010-12-22 | 中微半导体设备(上海)有限公司 | Reaction chamber part and plasma processing device employing same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS594011A (en) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | Manufacturing method of semiconductor device |
| EP2402298B1 (en) * | 2009-02-20 | 2016-05-11 | NGK Insulators, Ltd. | Method of fabricating a ceramic-metal junction |
| TWI456679B (en) * | 2009-03-27 | 2014-10-11 | Advanced Micro Fab Equip Inc | Reaction chamber component resistant to plasma corrosion, method of manufacturing the same, and plasma reaction chamber containing the same |
-
2011
- 2011-12-20 CN CN201110431022.XA patent/CN103171186B/en active Active
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2012
- 2012-11-21 TW TW101143559A patent/TWI553814B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1501763A (en) * | 2002-11-14 | 2004-06-02 | 友达光电股份有限公司 | Plasma treatment device |
| CN1828825A (en) * | 2005-03-02 | 2006-09-06 | 东京毅力科创株式会社 | Gas supply member and plasma processing apparatus |
| CN101150909A (en) * | 2006-09-22 | 2008-03-26 | 中微半导体设备(上海)有限公司 | Plasm restraint device |
| CN201681788U (en) * | 2010-04-02 | 2010-12-22 | 中微半导体设备(上海)有限公司 | Reaction chamber part and plasma processing device employing same |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI553814B (en) | 2016-10-11 |
| TW201338121A (en) | 2013-09-16 |
| CN103171186A (en) | 2013-06-26 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |