CN103137809A - Light emitting diode with current diffusion structure and manufacturing method thereof - Google Patents
Light emitting diode with current diffusion structure and manufacturing method thereof Download PDFInfo
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- CN103137809A CN103137809A CN2011103988917A CN201110398891A CN103137809A CN 103137809 A CN103137809 A CN 103137809A CN 2011103988917 A CN2011103988917 A CN 2011103988917A CN 201110398891 A CN201110398891 A CN 201110398891A CN 103137809 A CN103137809 A CN 103137809A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000009792 diffusion process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 94
- 230000004888 barrier function Effects 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 46
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 239000004411 aluminium Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 239000011230 binding agent Substances 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910017083 AlN Inorganic materials 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910000846 In alloy Inorganic materials 0.000 claims description 5
- 229910000978 Pb alloy Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 5
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004408 titanium dioxide Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 238000007788 roughening Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 10
- 230000000903 blocking effect Effects 0.000 abstract 4
- 229910002601 GaN Inorganic materials 0.000 description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 14
- 230000005855 radiation Effects 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 6
- 238000010276 construction Methods 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- GPYPVKIFOKLUGD-UHFFFAOYSA-N gold indium Chemical compound [In].[Au] GPYPVKIFOKLUGD-UHFFFAOYSA-N 0.000 description 1
- UCHOFYCGAZVYGZ-UHFFFAOYSA-N gold lead Chemical compound [Au].[Pb] UCHOFYCGAZVYGZ-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
一种具电流扩散结构的发光二极管与其制造方法，其包含一N型电极、一N型半导体层、一电流阻挡层、一发光层、一P型半导体层与一P型电极，其中该N型半导体层、该发光层与该P型半导体层形成三明治结构，该N型电极与该P型电极分别设置在该N型半导体层与该P型半导体层上，且本发明为让该电流阻挡层对应该N型电极的图案分布埋设在该N型半导体层内，据此本发明通过让该电流阻挡层埋设在该N型半导体层内，除了可让该N型电极所产生的电流绕过该电流阻挡层而均匀地通过该发光层之外，更可避免接口效应造成阻抗增加，因而可以提升发光效率，且本发明可让该发光层的主要发光区远离该N型电极，可减少该N型电极的光遮蔽量而提升发光亮度。
A light emitting diode with a current diffusion structure and a manufacturing method thereof, comprising an N-type electrode, an N-type semiconductor layer, a current blocking layer, a light emitting layer, a P-type semiconductor layer and a P-type electrode, wherein the N-type semiconductor layer, the light emitting layer and the P-type semiconductor layer form a sandwich structure, the N-type electrode and the P-type electrode are respectively arranged on the N-type semiconductor layer and the P-type semiconductor layer, and the present invention allows the current blocking layer to be buried in the N-type semiconductor layer corresponding to the pattern distribution of the N-type electrode. Accordingly, by burying the current blocking layer in the N-type semiconductor layer, the present invention can not only allow the current generated by the N-type electrode to bypass the current blocking layer and pass through the light emitting layer uniformly, but also avoid the increase of impedance caused by the interface effect, thereby improving the light emitting efficiency. In addition, the present invention can allow the main light emitting area of the light emitting layer to be away from the N-type electrode, which can reduce the light shielding amount of the N-type electrode and improve the light emitting brightness.
Description
Technical field
The relevant light-emitting diode of the present invention refers to increase the light-emitting diode of luminous efficiency especially.
Background technology
Mainly formed by the multiple crystalline substance of heap of stone of luminous semi-conducting material in light-emitting diode (Light Emitting Diode, LED), take blue light-emitting diode as example.It mainly is comprised of gallium nitrate based (GaN-based) brilliant film of heap of stone, and storehouse forms the sandwich structure with a n type semiconductor layer, a luminescent layer and a p type semiconductor layer.
see also shown in Figure 1, be a kind of existing level formula light-emitting diode 1, it inserts current barrier layer 3 in P type semiconductor 2, so that scattered current can uniformly luminously increase luminous efficiency by luminescent layer 4 by stopping of current barrier layer 3, yet this kind horizontal light emitting diode structure, the first the sky of its light-emitting zone is restricted, in order to reduce the light masking amount of electrode, its P type electrode 5 adopts transparent conductive layer (as tin indium oxide) mostly, to increase light transmittance, yet the conductance of tin indium oxide is not good, easily cause interface effect, cause impedance to increase, its luminous efficiency can't effectively improve.
See also shown in Figure 2, be the existing vertical LED 6 of another kind, it must not adopt transparency conducting layer, thereby there is no not good problem of tin indium oxide conductance, yet it allows this current barrier layer 7 be arranged between P type semiconductor 8 and P type electrode 9, it causes P type semiconductor 8 and the contact area of P type electrode 9 to reduce, and still can cause the increase of impedance, and can't effectively improve luminous efficiency.
Obviously, prior art is in scattered current, and the demand on using is satisfied in the increase of its uncontrollable impedance, thereby can't really improve luminous efficiency.
Summary of the invention
Main purpose of the present invention is to disclose a kind of light emitting diode construction, and it can effectively control contact impedance, with certain improving luminous efficiency, and the demand on satisfied the use.
Secondary objective of the present invention is to disclose a kind of light emitting diode construction manufacture method, producing the light emitting diode construction that can effectively control contact impedance, and improving luminous efficiency, to satisfy the demand on using.
via as can be known above, for reaching above-mentioned purpose, the present invention is a kind of light-emitting diode of tool current spread structure, it comprises: a n type semiconductor layer, one luminescent layer, one p type semiconductor layer, one N-type electrode, one P type electrode and a current barrier layer, wherein this luminescent layer is arranged on a side of this n type semiconductor layer, this p type semiconductor layer is arranged on this luminescent layer away from a side of this n type semiconductor layer, this N-type electrode has a pattern and distributes, and be arranged on this n type semiconductor layer away from a side of this luminescent layer, this P type electrode is arranged on this p type semiconductor layer away from a side of this luminescent layer, this current barrier layer has that this pattern distributes and to being embedded in this n type semiconductor layer by the N-type electrode.
Preferably, this current barrier layer is made for being selected from metal oxide.
Preferably, this current barrier layer is to be selected from the group that titanium dioxide and silicon dioxide forms to make.
Preferably, the thickness of this current barrier layer is 10～500 nanometers.
Preferably, this n type semiconductor layer comprises one first n type semiconductor layer and one second n type semiconductor layer, and this current barrier layer is arranged between this first n type semiconductor layer and this second n type semiconductor layer.
Preferably, between this P type electrode and this p type semiconductor layer, a metallic reflector is set more, this metallic reflector is to be selected from the group that aluminium, nickel, silver and titanium form to make.
Preferably, between this metallic reflector and this P type electrode, a barrier layer, a binder course and a permanent substrate are set more, this barrier layer is to be selected from the group that titanium, tungsten, platinum, nickel, aluminium and chromium forms to make, this binder course is that any that be selected from gold-tin alloy, golden indium alloy and golden lead alloy made, and this permanent substrate is that any that be selected from silicon substrate, copper base, copper tungsten substrate, aluminium nitride substrate and titanium nitride substrate made.
And manufacture method of the present invention, its step is for first longly on a temporary substrate brilliantly forming this n type semiconductor layer, being embedded in the structures such as this current barrier layer, this luminescent layer and this p type semiconductor layer in this n type semiconductor layer, turn again and bind after on a permanent substrate, remove this temporary substrate, namely complete after plating at last this N-type electrode and this P type electrode.
Accordingly, the present invention is by burying the mode of this current barrier layer in this n type semiconductor layer, in scattered current, can effectively control contact impedance, and the present invention can allow the main luminous zone of this luminescent layer away from this N-type electrode, certain improving luminous efficiency with the light masking amount that reduces this N-type electrode, and the demand on satisfied the use.
Description of drawings
Fig. 1 is existing light emitting diode construction figure;
Fig. 2 is another existing light emitting diode construction figure;
Fig. 3 A is light emitting diode construction figure of the present invention;
Fig. 3 B is LED current flow graph of the present invention;
Fig. 4 A～4E is light-emitting diode manufacturing flow chart of the present invention.
Embodiment
Hereby relevant detailed content of the present invention and technical descriptioon, now be described further with embodiment, but will be appreciated that, these embodiment are the use for illustrating only, and should not be interpreted as restriction of the invention process.
see also shown in Fig. 3 A, the present invention is a kind of light-emitting diode of tool current spread structure, it comprises a n type semiconductor layer 10, one luminescent layer 20, one p type semiconductor layer 30, one N-type electrode 40, one P type electrode 50 and a current barrier layer 60, wherein this luminescent layer 20 is arranged on a side of this n type semiconductor layer 10, this p type semiconductor layer 30 is arranged on this luminescent layer 20 away from a side of this n type semiconductor layer 10, this N-type electrode 40 has a pattern and distributes, and be arranged on this n type semiconductor layer 10 away from a side of this luminescent layer 20, this P type electrode 50 is arranged on this p type semiconductor layer 30 away from a side of this luminescent layer 20.
This luminescent layer 20 can select common gallium nitride or InGaN to make, gallium nitride, aluminium gallium nitride alloy or aluminum indium nitride gallium that n type semiconductor layer 10 can be selected doped silicon etc. made, and 30 of p type semiconductor layers can select magnesium-doped gallium nitride, aluminium gallium nitride alloy or aluminum indium nitride gallium etc. to make.
And this current barrier layer 60 has that this pattern distributes and to being embedded in this n type semiconductor layer 10 by N-type electrode 40, and this n type semiconductor layer 10 can comprise one first n type semiconductor layer 11 and one second n type semiconductor layer 12,60 of this current barrier layers are arranged between this first n type semiconductor layer 11 and this second n type semiconductor layer 12, this current barrier layer 60 is made for being selected from metal oxide again, this current barrier layer 60 can be made for being selected from the group that titanium dioxide and silicon dioxide forms, and the thickness of this current barrier layer 60 can be 10～500 nanometers.The surface 111 of another this first n type semiconductor layer 11 can roughening to increase the contact area with this N-type electrode 40.
In addition, between this P type electrode 50 and this p type semiconductor layer 30, a metallic reflector 70 is set more, this metallic reflector 70 is made for the group that is selected from aluminium, nickel, silver, titanium and forms, and it can be used for the light that this luminescent layer 20 of reflection produces, and increase luminous efficiency, and the effect with conduction.
and between this metallic reflector 70 and this P type electrode 50, a barrier layer 80 is set more, one binder course 81 and a permanent substrate 82, this barrier layer 80 is for being selected from titanium, tungsten, platinum, nickel, aluminium, the group that chromium forms makes, this barrier layer 80 in order to block this binder course 81 in conjunction with the time destruction that this p type semiconductor layer 30 is caused, and in order to conduction, heat radiation, and this binder course 81 is for being selected from gold-tin alloy, the gold indium alloy, any of gold lead alloy made, has conduction, heat radiation waits effect with bonding, this permanent substrate 82 is for being selected from silicon substrate, copper base, the copper tungsten substrate, any of aluminium nitride substrate and titanium nitride substrate made, and in order to conduction, heat radiation, to increase radiating efficiency.
See also shown in Fig. 3 B, the present invention is by allowing this current barrier layer 60 be embedded in this n type semiconductor layer 10, except the electric current 41 that can allow this N-type electrode 40 produce is walked around this current barrier layer 60 and is passed through equably this luminescent layer 20, more can avoid interface effect to cause impedance to increase, thereby can improving luminous efficiency, and the present invention can allow the main luminous zone (being that electric current 41 is intensive by the district) of this luminescent layer 20 away from this N-type electrode 40, promote brightness with the light masking amount that reduces this N-type electrode 40.
Please consult again shown in Fig. 4 A～Fig. 4 E, and the method for manufacturing light-emitting of tool current spread structure of the present invention, its step is as described below.
at first, as shown in Fig. 4 A, long brilliant one first n type semiconductor layer 11 that forms on a temporary substrate 90, it can select the gallium nitride of doped silicon, aluminium gallium nitride alloy or aluminum indium nitride gallium etc. are made, and can be before long brilliant this first n type semiconductor layer 11 of formation on this temporary substrate 90, first form a buffer semiconductor layer 91 on this temporary substrate 90, buffering by this buffer semiconductor layer 91, can reduce the defective of this first n type semiconductor layer 11, this temporary substrate 90 can select the good sapphire substrate of long brilliant characteristic to make, and this buffer semiconductor layer 91 can be selected unadulterated gallium nitride, aluminium gallium nitride alloy or aluminum indium nitride gallium etc. are made.
Then, as shown in Figure 4 B, form the current barrier layer 60 that tool one pattern distributes on this first n type semiconductor layer 11, this current barrier layer 60 can be made for being selected from metal oxide.Can make for being selected from the group that titanium dioxide and silicon dioxide forms as this current barrier layer 60, and the thickness of this current barrier layer 60 can be 10～500 nanometers.
Then, as shown in Fig. 4 C, side direction is long brilliant on this first n type semiconductor layer 11 forms one second n type semiconductor layer 12 and coats and bury this current barrier layer 60, and gallium nitride, aluminium gallium nitride alloy or aluminum indium nitride gallium that this second n type semiconductor layer 12 can be selected doped silicon equally etc. made.
Then, form a luminescent layer 20 on this second n type semiconductor layer 12, this luminescent layer 20 can select gallium nitride or InGaN to make.
Then, form a p type semiconductor layer 30 on this luminescent layer 20,30 of p type semiconductor layers can select magnesium-doped gallium nitride, aluminium gallium nitride alloy or aluminum indium nitride gallium etc. to make.
Then, form a metallic reflector 70 on this p type semiconductor layer 30, this metallic reflector 70 can be made for being selected from the group that aluminium, nickel, silver, titanium forms, its high reflectance by this metallic reflector 70 can reflect the light that this luminescent layer 20 produces, and possesses the effects such as conduction, heat radiation.
Then, form a barrier layer 80 on this metallic reflector 70, this barrier layer 80 is made for the group that is selected from titanium, tungsten, platinum, nickel, aluminium, chromium and forms, and possesses the effects such as conduction, heat radiation.
Then, make this barrier layer 80 by a binder course 81 and permanent substrate 82 combinations, this moment this barrier layer 80 can in order to block this binder course 81 in conjunction with the time destruction that this p type semiconductor layer 30 is caused, and in order to conduction, heat radiation, and this binder course 81 can be made for any that is selected from gold-tin alloy, golden indium alloy, golden lead alloy, and the effect of tool conduction, heat radiation and bonding, this permanent substrate 82 is made for any that is selected from silicon substrate, copper base, copper tungsten substrate, aluminium nitride substrate and titanium nitride substrate, also tool conduction, the effect of dispelling the heat.
Then, as shown in Fig. 4 D, remove this temporary substrate 90 and this buffer semiconductor layer 91, and plate a P type electrode 50 at this permanent substrate 82.
At last, allow surface 111 roughenings of this first n type semiconductor layer 11, and position that should current barrier layer 60 is being plated the N-type electrode 40 that this pattern of tool distributes.
as mentioned above, the present invention is by burying the mode of this current barrier layer 60 in this n type semiconductor layer 10, except the effect that can have these current barrier layer 60 scattered currents, the present invention more can effectively control contact impedance, avoid contact impedance significantly to promote, again by method of the present invention, can form a rectilinear light-emitting diode, P type electrode 50 must not use the transparency conducting layer of high impedance, and the present invention can allow the main luminous zone of this luminescent layer 20 away from this N-type electrode 40, to reduce the light masking amount of this N-type electrode 40, thereby the present invention's improving luminous efficiency really, to satisfy the demand on using.
Claims (14)
1. the light-emitting diode of a tool current spread structure, is characterized in that, comprises:
One n type semiconductor layer;
One luminescent layer, this luminescent layer are arranged on a side of this n type semiconductor layer;
One p type semiconductor layer, this p type semiconductor layer are arranged on this luminescent layer away from a side of this n type semiconductor layer;
One N-type electrode, this N-type electrode have a pattern and distribute, and are arranged on this n type semiconductor layer away from a side of this luminescent layer;
One P type electrode, this P type electrode is arranged on this p type semiconductor layer away from a side of this luminescent layer;
One current barrier layer, this current barrier layer have that this pattern distributes and to being embedded in this n type semiconductor layer by the N-type electrode.
2. the light-emitting diode of tool current spread structure according to claim 1, is characterized in that, this current barrier layer is made for being selected from metal oxide.
3. the light-emitting diode of tool current spread structure according to claim 2, is characterized in that, this current barrier layer is to be selected from the group that titanium dioxide and silicon dioxide forms to make.
4. the light-emitting diode of tool current spread structure according to claim 1, is characterized in that, the thickness of this current barrier layer is 10～500 nanometers.
5. the light-emitting diode of tool current spread structure according to claim 1, it is characterized in that, this n type semiconductor layer comprises one first n type semiconductor layer and one second n type semiconductor layer, and this current barrier layer is arranged between this first n type semiconductor layer and this second n type semiconductor layer.
6. the light-emitting diode of tool current spread structure according to claim 1, is characterized in that, between this P type electrode and this p type semiconductor layer, a metallic reflector is set more, and this metallic reflector is to be selected from the group that aluminium, nickel, silver and titanium form to make.
7. the light-emitting diode of tool current spread structure according to claim 6, it is characterized in that, between this metallic reflector and this P type electrode, a barrier layer, a binder course and a permanent substrate are set more, this barrier layer is to be selected from the group that titanium, tungsten, platinum, nickel, aluminium and chromium forms to make, this binder course is that any that be selected from gold-tin alloy, golden indium alloy and golden lead alloy made, and this permanent substrate is that any that be selected from silicon substrate, copper base, copper tungsten substrate, aluminium nitride substrate and titanium nitride substrate made.
8. the method for manufacturing light-emitting of a tool current spread structure, is characterized in that, step comprises:
Long brilliant one first n type semiconductor layer that forms on a temporary substrate;
Form the current barrier layer that tool one pattern distributes on this first n type semiconductor layer;
Side direction is long brilliant on this first n type semiconductor layer forms one second n type semiconductor layer and coats and bury this current barrier layer;
Form a luminescent layer on this second n type semiconductor layer;
Form a p type semiconductor layer on this luminescent layer;
Form a metallic reflector on this p type semiconductor layer;
Form a barrier layer on this metallic reflector;
This barrier layer is combined with a permanent substrate by a binder course;
Remove this temporary substrate, plate a P type electrode at this permanent substrate;
Allow the surface roughening of this first n type semiconductor layer, and position that should current barrier layer is being plated the N-type electrode that this pattern of tool distributes.
9. the method for manufacturing light-emitting of tool current spread structure according to claim 8, is characterized in that, this current barrier layer is made for being selected from metal oxide.
10. the method for manufacturing light-emitting of tool current spread structure according to claim 9, is characterized in that, this current barrier layer is to be selected from the group that titanium dioxide and silicon dioxide forms to make.
11. the method for manufacturing light-emitting of tool current spread structure according to claim 8 is characterized in that, the thickness of this current barrier layer is 10～500 nanometers.
12. the method for manufacturing light-emitting of tool current spread structure according to claim 8 is characterized in that, this metallic reflector is to be selected from the group that aluminium, nickel, silver and titanium form to make.
13. the method for manufacturing light-emitting of tool current spread structure according to claim 8, it is characterized in that, this barrier layer is to be selected from the group that titanium, tungsten, platinum, nickel, aluminium and chromium forms to make, this binder course is that any that be selected from gold-tin alloy, golden indium alloy and golden lead alloy made, and this permanent substrate is that any that be selected from silicon substrate, copper base, copper tungsten substrate, aluminium nitride substrate and titanium nitride substrate made.
14. the method for manufacturing light-emitting of tool current spread structure according to claim 8, it is characterized in that, before long brilliant this first n type semiconductor layer of formation on this temporary substrate, first form a buffer semiconductor layer on this temporary substrate, and when removing this temporary substrate, remove simultaneously this buffer semiconductor layer.
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| CN106025027A (en) * | 2016-07-15 | 2016-10-12 | 厦门乾照光电股份有限公司 | LED chip structure and manufacturing method thereof |
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| CN106025027A (en) * | 2016-07-15 | 2016-10-12 | 厦门乾照光电股份有限公司 | LED chip structure and manufacturing method thereof |
| CN106025027B (en) * | 2016-07-15 | 2018-07-13 | 厦门乾照光电股份有限公司 | A kind of LED chip structure and its manufacturing method |
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Application publication date: 20130605 |