CN103074597A - Reaction chamber - Google Patents
Reaction chamber Download PDFInfo
- Publication number
- CN103074597A CN103074597A CN2012105807728A CN201210580772A CN103074597A CN 103074597 A CN103074597 A CN 103074597A CN 2012105807728 A CN2012105807728 A CN 2012105807728A CN 201210580772 A CN201210580772 A CN 201210580772A CN 103074597 A CN103074597 A CN 103074597A
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- Prior art keywords
- reaction chamber
- well heater
- thermal baffle
- rotational structure
- cooling
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 60
- 238000009413 insulation Methods 0.000 claims abstract description 40
- 238000001816 cooling Methods 0.000 claims description 31
- 238000013022 venting Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 239000003351 stiffener Substances 0.000 claims description 14
- 230000004308 accommodation Effects 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 9
- 239000000112 cooling gas Substances 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- -1 norbide Chemical compound 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 238000012423 maintenance Methods 0.000 abstract description 6
- 230000003245 working effect Effects 0.000 description 12
- 230000000694 effects Effects 0.000 description 8
- 238000013461 design Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Abstract
The invention provides a reaction chamber which comprises a chamber body, a tray in the former, a rotary structure in the chamber body, a heater arranged in an accommodating space to heat the tray, and a heat insulation structure in the accommodating space, wherein the rotary structure is connected with the tray through a cylindrical side wall, and the rotary structure, the tray and the cylindrical side wall form the accommodating space; and with the heat insulation structure, the heat exchange between the heater and the rotary structure can be at least reduced. According to the reaction chamber, the rotary structure low has probability of damage, and is longer in service life, which reduces the equipment maintenance investment.
Description
Technical field
The present invention relates to the integrated device electronics technical field, particularly a kind of reaction chamber.
Background technology
Metal organic chemical vapor deposition (MOCVD) is a kind of chemical vapor deposition method that grows up on the basis of vapor phase epitaxial growth (VPE).It is with the reactant gases as the crystal growth such as the hydride of the organic compound of III family, II family element and V, VI family element, carry out epitaxial deposition process in the pyrolysis mode in Sapphire Substrate or other substrates, the epitaxial material layer of grow various III-V family, group Ⅱ-Ⅵ compound semiconductor and their multivariate solid solution.
Please refer to Fig. 1, it is the structural representation of reaction chamber of the MOCVD equipment of prior art.As shown in Figure 1, reaction chamber 1 comprises cavity 10; Be arranged at the pallet 11 in the described cavity 10, described pallet 11 is in order to carry pending semiconductor wafer or dielectric substrate; Drive the rotational structure 14 that described pallet 11 rotates, described rotational structure 14 is connected with described pallet 11 by cylindrical sidewall 16, and described rotational structure 14, pallet 11 and cylindrical sidewall 16 have formed an accommodation space; Well heater 12, described well heater 12 places in the described accommodation space, and described well heater 12 keeps stable by supporting structure 13.
Yet in the reaction chamber of prior art, described rotational structure just damaged before the work-ing life when not reaching its design usually, thereby had greatly increased the maintenance of the equipment input.
Summary of the invention
The object of the present invention is to provide a kind of reaction chamber, to solve the extremely flimsy problem of rotational structure in the existing reaction chamber.
For solving the problems of the technologies described above, the invention provides a kind of reaction chamber, described reaction chamber comprises: cavity; Be arranged at the pallet in the described cavity; Be arranged at the rotational structure in the described cavity, described rotational structure is connected with described pallet by cylindrical sidewall, and described rotational structure, pallet and cylindrical sidewall have formed an accommodation space; Be arranged at the well heater that is used for heating described pallet in the described accommodation space; And being arranged at the interior heat insulation structural of described accommodation space, described heat insulation structural reduces the heat exchange between well heater and the rotational structure at least.
Optionally, in described reaction chamber, described heat insulation structural is a thermal baffle, and described thermal baffle is arranged between described well heater and the rotational structure.
Optionally, in described reaction chamber, in described well heater and rotational structure, the more close described well heater of described thermal baffle.
Optionally, in described reaction chamber, have a gap between described thermal baffle and the described cylindrical sidewall, the width in described gap is 0.1mm ~ 10mm.
Optionally, in described reaction chamber, be provided with venting hole on the described cylindrical sidewall, and the described cylindrical sidewall in described venting hole zone between described thermal baffle and well heater.
Optionally, in described reaction chamber, the diameter of described venting hole is 0.1mm ~ 1mm.
Optionally, in described reaction chamber, described thermal baffle is a plane of reflection towards the surface of described well heater, and described plane of reflection reflects the thermal radiation that described well heater sends.
Optionally, in described reaction chamber, described plane of reflection is minute surface.
Optionally, in described reaction chamber, described thermal baffle comprises body and is embedded in cooling line or the cooling chamber of body, is connected with cooling liqs or gas in described cooling line or the cooling chamber.
Optionally, in described reaction chamber, the material that consists of described thermal baffle is heat-stable material.
Optionally, in described reaction chamber, the material that consists of described thermal baffle is one or more in tungsten, molybdenum, tantalum, niobium, vanadium, stainless steel, norbide, silicon carbide and the boron nitride.
Optionally, in described reaction chamber, the thickness of described thermal baffle is 1mm ~ 5mm.
Optionally, in described reaction chamber, also comprise a pillar stiffener, described pillar stiffener passes described rotational structure and connects described well heater and described thermal baffle, and described pillar stiffener is used for supporting described well heater and described thermal baffle.
Optionally, in described reaction chamber, be provided with cooling liqs or cooling gas transmission pipeline on the described pillar stiffener, described cooling liqs or cooling gas transmission pipeline link to each other with cooling duct or the cooling chamber of described thermal baffle.
The present application people is through finding after the research: the reason that the rotational structure in the existing reaction chamber just damaged before the work-ing life when not reaching its design is, there is obvious heat exchange between well heater and the rotational structure, and this heat exchange has caused the temperature of rotational structure to exceed the temperature of its trouble-free service, has caused thus the rotational structure in the existing reaction chamber just to damage before the work-ing life when not reaching its design.In the reaction chamber that the application provides, be provided with heat insulation structural, described heat insulation structural reduces the heat exchange between well heater and the rotational structure at least, thus, can alleviate the heat of described well heater generation for the impact of the temperature of described rotational structure, thereby reduce the loss of described rotational structure, improve the work-ing life of described rotational structure.
Description of drawings
Fig. 1 is the structural representation of reaction chamber of the MOCVD equipment of prior art;
Fig. 2 is the structural representation of the reaction chamber of the embodiment of the invention.
Embodiment
Below in conjunction with the drawings and specific embodiments the reaction chamber that the present invention proposes is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-accurately ratio, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
In the reaction chamber of prior art, rotational structure just damaged before the work-ing life when not reaching its design usually, thereby the maintenance that has greatly increased equipment drops into.And for this problem, those skilled in the art had not found out its basic reason always.That is to say, the extremely flimsy problem of rotational structure is perplexing those skilled in the art for a long time in the existing reaction chamber, and the existence of this problem, has directly caused the input of large number quipments cost.
For this reason, the present application people has also dropped into a large amount of time and energy goes to study this problem.After having passed through a large amount of research, the present application people finds, cause the basic reason of these serious problems to be: to have obvious heat exchange between well heater and the rotational structure, and this heat exchange has caused the temperature of rotational structure to exceed the temperature of its trouble-free service, thereby cause rotational structure very easily to damage, work-ing life when especially, the rotational structure of damage is far from reaching its design.
Further research is found; common; the safe working temperature of rotational structure is (namely under this working temperature; rotational structure can be through after the normal wearing and tearing; reach/substantially reach its work-ing life) at tens degrees centigrade, and the working temperature of well heater often can arrive more than 1,000 degrees centigrade.Well heater through with the heat exchange of rotational structure after, described rotating mechanism can be heated to hundreds of degree centigrade, in the situation that such one exceed safe working temperature for a long time, caused the rotational structure damage.
For this reason, the present application people has proposed a kind of new reaction chamber, to solve the existing problem of reaction chamber in the prior art.Please refer to Fig. 2, it is the structural representation of the reaction chamber of the embodiment of the invention.As shown in Figure 2, described reaction chamber 2 comprises: cavity 20; Be arranged at the pallet 21 in the described cavity 20; Be arranged at the rotational structure 24 in the described cavity 20, described rotational structure 24 is connected with described pallet 21 by cylindrical sidewall 26, and described rotational structure 24, pallet 21 and cylindrical sidewall 26 have formed an accommodation space 28; Be arranged at the well heater 22 that is used for heating described pallet 21 in the described accommodation space 28; And being arranged at heat insulation structural 25 in the described accommodation space 28, described heat insulation structural 25 reduces the heat exchange between well heater 22 and the rotational structure 24 at least.
In described reaction chamber 2, owing to having increased heat insulation structural 25, described heat insulation structural 25 can reduce the heat exchange between well heater 22 and the rotational structure 24 at least, thus, with respect to prior art, the well heater 22 in the present embodiment is lower for the temperature effect of rotational structure 24.Thereby can reduce high temperature for the performance compromise of rotational structure 24, and then the work-ing life that can improve rotational structure 24, and then also reduced the maintenance of the equipment input.
In addition, not only can reduce the infringement of rotational structure 24 by increasing described heat insulation structural 25, improve the work-ing life of rotational structure 24; Simultaneously, because in the process of well heater 22 and rotational structure 24 heat exchanges, cause the raising of rotational structure 24 temperature except meeting, also may cause the temperature of well heater 22 to reduce, therefore described heat insulation structural 25 also helps the temperature that keeps described well heater 22, thereby reduces the thermal losses of described well heater 22.
In the present embodiment, described heat insulation structural 25 is a thermal baffle, and described thermal baffle is arranged between described well heater 22 and the rotational structure 24.Described thermal baffle can stop the radiation heating of 22 pairs of described rotational structures 24 of described well heater, thereby reduces the heat exchange between described well heater 22 and the described rotational structure 24.In the present embodiment because described heat insulation structural 25 selected a thermal baffle to be achieved, therefore, its implement very convenient, cost is also relatively cheap.Simultaneously, described heat insulation structural 25/ thermal baffle is arranged between described well heater 22 and the rotational structure 24, thus, can very directly slows down described well heater 22 for the heat effect of described rotational structure 24.Namely by the arranging of said structure and position, can realize alleviating heat exchange between described well heater 22 and the rotational structure 24 with low cost.Certainly, in other embodiments of the invention, described well heater 22 also can be achieved by other structures, if its can realize being alleviated/reducing for the heat exchange between well heater 22 and the rotational structure 24, other, the application does not do restriction.
Preferably, in described well heater 22 and rotational structure 24, the more close described well heater 22 of described thermal baffle that is to say, with respect to described rotational structure 24, and the more close described well heater 22 of described heat insulation structural 25/ thermal baffle.By this kind design, can be so that described heat insulation structural 25/ thermal baffle realizes reducing the effect of the heat exchange between described well heater 22 and the rotational structure 24 quickly.
In the present embodiment, has a gap between described heat insulation structural 25/ thermal baffle and the described cylindrical sidewall 26.At this, consider that described rotational structure 24 will drive described pallet 21 and be rotated motion by described cylindrical sidewall 26, that is to say, described cylindrical sidewall 26 also will be rotated under the drive of described rotational structure 24/rotate.Therefore, in order to prevent that described cylindrical sidewall 26 from causing the damage of described cylindrical sidewall 26 or described heat insulation structural 25/ thermal baffle with described heat insulation structural 25/ thermal baffle generation friction in rotation/rotation process, between described heat insulation structural 25/ thermal baffle and the described cylindrical sidewall 26 gap is set, thereby conveniently, has effectively avoided the problems referred to above.Preferably, the width in described gap is 0.1mm ~ 10mm, thus, both can avoid described cylindrical sidewall 26 to rub with described heat insulation structural 25/ thermal baffle in rotation/rotation process; Can effectively alleviate again/reduce between described well heater 22 and the described rotational structure 24 heat exchange occurs.More excellent, the width in described gap is 1mm ~ 4mm, and described gap is in this width range, and balance is avoided friction and reduced these two functions of heat exchange preferably, concrete, the width in described gap can be 1mm, 1.5mm, 2mm, 2.5mm, 3mm, 3.5mm or 4mm etc.
Further, be provided with venting hole (not shown among Fig. 2) on the described cylindrical sidewall 26, and the described cylindrical sidewall 26 in described venting hole zone between described heat insulation structural 25/ thermal baffle and well heater 22.At this, although consider that the gap size that has between described heat insulation structural 25/ thermal baffle and the described cylindrical sidewall 26 is very little, but, it has still reduced the effect of heat insulation structural 25/ thermal baffle minimizing heat exchange to a certain extent, but the hot gas that well heater 22 produces also may be from a side of the close well heater 22 of thermal baffle, leak to a side of the close rotational structure 24 of thermal baffle, the hot gas of namely revealing can heat described rotational structure 24, so that described rotational structure temperature raises.Therefore, at this by in described cylindrical sidewall 26 venting hole being set, thereby so that the hot gas that well heater 22 produces can exclude from described venting hole, reduce the amount of leakage of hot gas, further reduce the temperature of described rotational structure 24.
Further, described venting hole is near described heat insulation structural 25/ thermal baffle; Namely with respect to described well heater 22, described venting hole that is to say that more near described heat insulation structural 25/ thermal baffle described venting hole is near described gap.Described venting hole arranged to get near described gap, thus can so that described venting hole realize preferably for the hot air distributing effect so that can be the as far as possible few leakage of the hot gas that described well heater 22 produces and act on described rotational structure 24.
Preferably, the diameter of described venting hole is 0.1mm ~ 1mm, is arranged in this scope by the diameter with described venting hole, can either realize preferably the shunting action of hot gas/heat, again can be so that the air-flow in the described chamber 20 is relatively stable.
Preferably, described thermal baffle is a plane of reflection towards the surface of described well heater 22, and described plane of reflection reflects the thermal radiation that described well heater 22 sends.Can reduce the calorific loss of well heater 22 by reflective thermal radiation, strengthen the heating efficiency of 22 pairs of pallets 21 of well heater, reduce simultaneously the heat effect of 22 pairs of rotational structures 24 of well heater.Further, described plane of reflection is minute surface.Realize the effect of emission of thermal radiation by minute surface, can spend lower cost, can realize preferably thermal radiation reflex action again.
Preferably, described heat insulation structural 25/ thermal baffle comprises body and is embedded in cooling line or the cooling chamber of body, is connected with cooling liqs or gas in described cooling line or the cooling chamber.Thus, can be so that described heat insulation structural 25/ thermal baffle be in lower temperature, special, the heat that described well heater 22 produces can just be pulled away at the thermal baffle place, reduces the heat that is delivered to described rotational structure 24.
Preferably, the material that consists of described thermal baffle is heat-stable material, and the material that namely forms described thermal baffle is high temperature material.For example, the material that consists of described thermal baffle is one or more in tungsten, molybdenum, tantalum, niobium, vanadium, stainless steel, norbide, silicon carbide and the boron nitride etc.At this, select heat-stable material to make thermal baffle, in the work-ing life that just can improve thus thermal baffle, the cost that reduces equipment drops into.For example, the material of described thermal baffle is stainless steel, and is concrete, and described stainless thickness can be 1mm ~ 5mm.By the selection of above-mentioned thickness, can realize with lower equipment cost preferably effect of heat insulation, namely realized getting both of cost control and effect of heat insulation.
In the present embodiment, described reaction chamber 2 also comprises a pillar stiffener 23, and described pillar stiffener 23 passes described rotational structure 24 and connects described well heater 22 and described thermal baffle, and described pillar stiffener 23 is used for supporting described well heater 22 and described thermal baffle.In this enforcement, described well heater 22 is fixed on the described pillar stiffener 23; Described heat insulation structural 25/ thermal baffle is fixed on the described well heater 22 by fixed sturcture 27, and then is fixed on the described pillar stiffener 23 by described well heater 22, thereby has guaranteed described heat insulation structural 25/ heat insulation stability of plates.In other embodiments of the invention, described heat insulation structural 25/ thermal baffle can also keep stable by other means, and for example, described heat insulation structural 25/ thermal baffle is directly fixed on described supporting structure 23 first-class modes, and to this, the application does not do restriction.
Further, be provided with cooling liqs or cooling gas transmission pipeline on the described pillar stiffener 23, described cooling liqs or cooling gas transmission pipeline link to each other with cooling duct or the cooling chamber of described thermal baffle.Described cooling liqs or cooling gas transmission pipeline are to cooling duct or cooling chamber circle transmission cooling liqs or the cooling gas of described thermal baffle.
In the reaction chamber that the present embodiment provides, effectively reduced the heat exchange between well heater and the rotational structure, thereby improved the work-ing life of rotational structure, reduced the maintenance of the equipment input.Further, the present application people has done the emulation experiment of a hot gas state for the reaction chamber of the reaction chamber of prior art and the present embodiment, experimental result shows: the reaction chamber that the present embodiment provides has reduced the heat transmission between well heater and the rotational structure effectively.Especially, the temperature of the rotational structure in the temperature reaction chamber more of the prior art of the rotational structure in the reaction chamber that provides of the present embodiment is much lower.The reaction chamber that finally is presented as the present embodiment has reduced the heat exchange between well heater and the rotational structure effectively, in the work-ing life of having improved rotational structure, has reduced the maintenance of the equipment input.
Foregoing description only is the description to preferred embodiment of the present invention, is not any restriction to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention is done according to above-mentioned disclosure all belong to the protection domain of claims.
Claims (14)
1. a reaction chamber is characterized in that, comprising: cavity; Be arranged at the pallet in the described cavity; Be arranged at the rotational structure in the described cavity, described rotational structure is connected with described pallet by cylindrical sidewall, and described rotational structure, pallet and cylindrical sidewall have formed an accommodation space; Be arranged at the well heater that is used for heating described pallet in the described accommodation space; And being arranged at the interior heat insulation structural of described accommodation space, described heat insulation structural reduces the heat exchange between well heater and the rotational structure at least.
2. reaction chamber as claimed in claim 1 is characterized in that, described heat insulation structural is a thermal baffle, and described thermal baffle is arranged between described well heater and the rotational structure.
3. reaction chamber as claimed in claim 2 is characterized in that, in described well heater and rotational structure, and the more close described well heater of described thermal baffle.
4. reaction chamber as claimed in claim 2 is characterized in that, has a gap between described thermal baffle and the described cylindrical sidewall, and the width in described gap is 0.1mm ~ 10mm.
5. reaction chamber as claimed in claim 2 is characterized in that, is provided with venting hole on the described cylindrical sidewall, and the described cylindrical sidewall in described venting hole zone between described thermal baffle and well heater.
6. reaction chamber as claimed in claim 5 is characterized in that, the diameter of described venting hole is 0.1mm ~ 1mm.
7. reaction chamber as claimed in claim 2 is characterized in that, described thermal baffle is a plane of reflection towards the surface of described well heater, and described plane of reflection reflects the thermal radiation that described well heater sends.
8. reaction chamber as claimed in claim 7 is characterized in that, described plane of reflection is minute surface.
9. such as claim 2 or 7 described reaction chambers, it is characterized in that, described thermal baffle comprises body and is embedded in cooling line or the cooling chamber of body, is connected with cooling liqs or gas in described cooling line or the cooling chamber.
10. reaction chamber as claimed in claim 2 is characterized in that, the material that consists of described thermal baffle is heat-stable material.
11. reaction chamber as claimed in claim 10 is characterized in that, the material that consists of described thermal baffle is one or more in tungsten, molybdenum, tantalum, niobium, vanadium, stainless steel, norbide, silicon carbide and the boron nitride.
12. each the described reaction chamber as in the claim 10 is characterized in that the thickness of described thermal baffle is 1mm ~ 5mm.
13. reaction chamber as claimed in claim 9 is characterized in that, also comprises a pillar stiffener, described pillar stiffener passes described rotational structure and connects described well heater and described thermal baffle, and described pillar stiffener is used for supporting described well heater and described thermal baffle.
14. reaction chamber as claimed in claim 13 is characterized in that, is provided with cooling liqs or cooling gas transmission pipeline on the described pillar stiffener, described cooling liqs or cooling gas transmission pipeline link to each other with cooling duct or the cooling chamber of described thermal baffle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105807728A CN103074597A (en) | 2012-12-26 | 2012-12-26 | Reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105807728A CN103074597A (en) | 2012-12-26 | 2012-12-26 | Reaction chamber |
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| Publication Number | Publication Date |
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| CN103074597A true CN103074597A (en) | 2013-05-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012105807728A Pending CN103074597A (en) | 2012-12-26 | 2012-12-26 | Reaction chamber |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103541000A (en) * | 2013-11-06 | 2014-01-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Device and method for preparing boron nitride single crystal |
| CN105417539A (en) * | 2016-01-17 | 2016-03-23 | 河北德谦环保科技股份有限公司 | Waste carbon recycling and regenerating system |
| CN110173411A (en) * | 2019-06-21 | 2019-08-27 | 北京北方华创微电子装备有限公司 | Cold pump closure and reaction chamber |
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| CN102121098A (en) * | 2010-01-08 | 2011-07-13 | 复旦大学 | Reaction chamber with external heating mode for metal organic chemical vapor deposition system |
| CN102668033A (en) * | 2010-03-15 | 2012-09-12 | 住友电气工业株式会社 | Semiconductor thin-film manufacturing method, seminconductor thin-film manufacturing apparatus, susceptor, and susceptor holding tool |
| CN102808164A (en) * | 2011-05-31 | 2012-12-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Cavity device and substrate process unit with same |
| CN203007403U (en) * | 2012-12-26 | 2013-06-19 | 光达光电设备科技（嘉兴）有限公司 | Reaction chamber |
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2012
- 2012-12-26 CN CN2012105807728A patent/CN103074597A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102121098A (en) * | 2010-01-08 | 2011-07-13 | 复旦大学 | Reaction chamber with external heating mode for metal organic chemical vapor deposition system |
| CN102668033A (en) * | 2010-03-15 | 2012-09-12 | 住友电气工业株式会社 | Semiconductor thin-film manufacturing method, seminconductor thin-film manufacturing apparatus, susceptor, and susceptor holding tool |
| CN102808164A (en) * | 2011-05-31 | 2012-12-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Cavity device and substrate process unit with same |
| CN203007403U (en) * | 2012-12-26 | 2013-06-19 | 光达光电设备科技（嘉兴）有限公司 | Reaction chamber |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103541000A (en) * | 2013-11-06 | 2014-01-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Device and method for preparing boron nitride single crystal |
| WO2015067029A1 (en) * | 2013-11-06 | 2015-05-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Device and method for preparing boron nitride monocrystals |
| CN103541000B (en) * | 2013-11-06 | 2016-09-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of device and method preparing boron nitride monocrystal |
| CN105417539A (en) * | 2016-01-17 | 2016-03-23 | 河北德谦环保科技股份有限公司 | Waste carbon recycling and regenerating system |
| CN110173411A (en) * | 2019-06-21 | 2019-08-27 | 北京北方华创微电子装备有限公司 | Cold pump closure and reaction chamber |
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Application publication date: 20130501 |