CN103074673A - Substrate supporting structure and deposition device - Google Patents
Substrate supporting structure and deposition device Download PDFInfo
- Publication number
- CN103074673A CN103074673A CN2012105808788A CN201210580878A CN103074673A CN 103074673 A CN103074673 A CN 103074673A CN 2012105808788 A CN2012105808788 A CN 2012105808788A CN 201210580878 A CN201210580878 A CN 201210580878A CN 103074673 A CN103074673 A CN 103074673A
- Authority
- CN
- China
- Prior art keywords
- temperature compensation
- compensation plates
- substrate
- support structure
- substrate support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to a substrate supporting structure which comprises a support plate with a temperature compensation board, wherein through holes are formed in the temperature compensation board and used for accommodating the substrates; a protective layer is formed on the surface of the temperature compensation board away from the support plate and used for inhibiting or preventing the surface of the support plate away from the temperature compensation board from III-V compound epitaxial deposition. The invention also relates to a deposition device which comprises a sealing reaction chamber, the substrate supporting structure, a gas feeding mechanism used for supplying raw gases to the substrates, and a heating mechanism used for heating the substrates. The substrate supporting structure or the deposition device can reduce or avoid raw gas waste so as to save the raw gas, and accordingly, the cleaning of the temperature compensation board is reduced.
Description
Technical field
The present invention relates to particularly relate to a kind of substrate support structure and deposition apparatus for the device by one side heated substrate one side depositing operation of deposit film on the next surface at substrate of base feed gas under the condition of high temperature.
Background technology
Epitaxial growth technology is used widely in the various fields of industrial community, and for the performance that guarantees the extension on the substrate is even, prior art makes the substrate homogeneous heating by compensating plate.
Fig. 1 is the vertical view of prior art substrate support structure.As shown in Figure 1, described substrate support structure 1 comprises support plate 11, temperature compensation plates 12 and through hole 13.Fig. 2 is that Fig. 1 is along the sectional view of A-A ' cutting line, as shown in Figure 2, has temperature compensation plates 12 on the described support plate 11, has through hole 13 in the described temperature compensation plates 12, described through hole 13 is used for accommodating substrate 14, and described through hole 13 is surrounded by described temperature compensation plates 12 and forms, wherein, the heat-conduction coefficient of the material of the heat-conduction coefficient of the material of described temperature compensation plates 12 and described substrate 14 is same or similar, so that the temperature of described substrate 14 upper surfaces is even.When described substrate 14 is carried out epitaxy, described support plate 11 is heated, described support plate 11 is with the described substrate 14 of heat transferred, owing to being surrounded by described temperature compensation plates 12 around the described substrate 14, the heat-conduction coefficient of the material of the heat-conduction coefficient of the material of described temperature compensation plates 12 and described substrate 14 is same or similar, so that the uniformity of temperature profile of described substrate 14 whole upper surfaces, so that unstripped gas is in described substrate 14 whole upper surface homogeneous reactions, thereby so that on the described substrate 14 the extension performance of deposition even.
Although above-mentioned prior art has solved the evenly problem of growth of extension, but, when the heat-conduction coefficient of the material of the heat-conduction coefficient of the material of described temperature compensation plates 12 and described substrate 14 is same or similar, the lattice of temperature compensation plates 12 is probably same or similar with described substrate 14, particularly during the material of the heat-conduction coefficient of the material of described temperature compensation plates 12 and described substrate 14 identical, unstripped gas is in described substrate 14 reactions and deposition, also can react and deposit in described temperature compensation plates 12, thereby form the film the same with extension on the described substrate 14 in described temperature compensation plates 12, therefore, cause consumption and the waste of unstripped gas, also need often described temperature compensation plates 12 to be cleaned simultaneously.
Therefore, how to reduce or avoid the waste of unstripped gas, and reduce the cleaning to described temperature compensation plates, become the problem that those skilled in the art need to solve.
Summary of the invention
There is the problem of unstripped gas waste in the prior art substrate support structure, the invention provides a kind of substrate support structure that can address the above problem and deposition apparatus.
The invention provides a kind of substrate support structure; be used for the technique support substrates at deposition III-V compounds of group; described substrate support structure comprises support plate; has temperature compensation plates on the described support plate; has through hole in the described temperature compensation plates; described through hole is used for accommodating substrate, and the surface that described temperature compensation plates deviates from described support plate is formed with protective layer, and is described protective layer used to suppress or to prevent that described temperature compensation plates from deviating from the surface generation III-V compounds of group epitaxial deposition of described support plate.
Further, in described substrate support structure, the material of described protective layer is silicon-dioxide or amorphous or polycrystalline material.
Further, in described substrate support structure, described amorphous or polycrystalline material are amorphous or polycrystal carborundum.
Further, in described substrate support structure, described substrate is Sapphire Substrate, gallium nitride substrate or silicon substrate.
Further, in described substrate support structure, the heat-conduction coefficient of the material of described temperature compensation plates is more than 0.5 times and below 2 times of heat-conduction coefficient of the material of described substrate.
Further, in described substrate support structure, the material of described temperature compensation plates is identical with the material of described substrate.
Further, in described substrate support structure, described temperature compensation plates is made of a plurality of sub-blocks, and the described protective layer on each described sub-block is a monoblock.
Further, in described substrate support structure, described temperature compensation plates is circular, and described sub-block is fan-shaped array centered by the center of circle of described temperature compensation plates or donut is arranged.
Further, in described substrate support structure, described sub-block is fan-shaped array centered by the center of circle of described temperature compensation plates, and the thickness of different sub-blocks is identical.
Further, in described substrate support structure, described sub-block is donut centered by the center of circle of described temperature compensation plates arranges, and different sub-blocks increase from the center of circle along the outside thickness of radius.
Further, in described substrate support structure, described temperature compensation plates is fixed on the described support plate by dismountable fixing part.
Further, in described substrate support structure, described temperature compensation plates below is provided with locating pin or the location is empty, and the upper surface of described support plate is provided with corresponding pilot hole or locating pin, described locating pin is inserted described pilot hole, with fixing described temperature compensation plates.
Further, in described substrate support structure, described III-V compounds of group is gan.
Further, the present invention also provides a kind of deposition apparatus, comprise: sealable reaction chamber, described substrate support structure, be used for to described substrate base feed gas gas supply mechanism, be used for heating the heating arrangements of described substrate, wherein, described substrate support structure is arranged in the described reaction chamber, in described reaction chamber, by utilizing described heating arrangements to heat described substrate via described substrate support structure, and under the condition of high temperature base feed gas, form growing film on the surface of described substrate.
Compared with prior art, substrate support structure provided by the invention and deposition apparatus have the following advantages:
1. in substrate support structure of the present invention and the deposition apparatus; the surface that described temperature compensation plates deviates from described support plate is formed with protective layer; compared with prior art; when described substrate is carried out epitaxy; described protective layer suppresses or prevents that described temperature compensation plates from deviating from the surface generation III-V compounds of group epitaxial deposition of described support plate; to reduce or to avoid the waste of unstripped gas, also reduce the cleaning to described temperature compensation plates simultaneously.
2. in substrate support structure of the present invention and the deposition apparatus, described temperature compensation plates is made of a plurality of sub-blocks, so described temperature compensation plates is divided into the sub-block of some less, because the area of the sub-block of each described temperature compensation plates is less than whole described temperature compensation plates, so, the buckling deformation amount of the sub-block of described temperature compensation plates is little, and the sub-block of described temperature compensation plates can be fixed on the described support plate, thus the distortion of the described temperature compensation plates of Avoids or reduces.
3. in substrate support structure of the present invention and the deposition apparatus, described temperature compensation plates is fixed on the described support plate by dismountable fixing part, when described temperature compensation plates generation viscous deformation or damage, can described temperature compensation plates be unloaded from described support plate by described fixing part, change new described temperature compensation plates, to install and to replace conveniently, flexibly described temperature compensation plates; When described temperature compensation plates is made of a plurality of sub-blocks, the sub-block of each described temperature compensation plates is fixed on the described support plate by dismountable fixing part, when the sub-block generation viscous deformation of only having one of them or several described temperature compensation plates or when damaging, the sub-block that only need change one or several the described temperature compensation plates that wherein deforms gets final product, and saves described temperature compensation plates.
Description of drawings
Fig. 1 is the vertical view of prior art substrate support structure;
Fig. 2 is that Fig. 1 is along the sectional view of A-A ' cutting line;
Fig. 3 is the vertical view of the substrate support structure of an embodiment of the present invention;
Fig. 4 is that Fig. 3 is along the sectional view of B-B ' cutting line;
Fig. 5 is the vertical view of the substrate support structure of an embodiment of the present invention;
Fig. 6 is the vertical view of the substrate support structure of the another embodiment of the present invention;
Fig. 7 is that Fig. 5 is along the sectional view of C-C ' cutting line;
Fig. 8 is the again vertical view of the substrate support structure of an embodiment of the present invention;
Fig. 9 is that Fig. 7 is along the sectional view of D-D ' cutting line.
Embodiment
In the substrate support structure of prior art, described substrate support structure comprises support plate, temperature compensation plates and through hole, but in the time of unstripped gas and the reaction of described substrate, unstripped gas also can be reacted with described temperature compensation plates, thereby causes consumption and the waste of unstripped gas.The contriver finds through the further investigation to the prior art substrate support structure; described temperature compensation plates deviates from the part of the surface of described support plate except described through hole and is formed with protective layer; the epitaxial deposition of III-V compounds of group occurs in the surface that the described temperature compensation plates that can effectively suppress described protective layer or prevent deviates from described support plate; thereby avoid the waste of unstripped gas, also reduce the cleaning to described temperature compensation plates simultaneously.The substrate support structure of prior art does not arrange described protective layer to reduce or to avoid the waste of unstripped gas.
Because above-mentioned research; the present invention proposes a kind of waste that can reduce or avoid unstripped gas, and reduces substrate support structure and deposition apparatus to the cleaning of described temperature compensation plates; described substrate support structure comprises support plate; has temperature compensation plates on the described support plate; have the through hole that holds described substrate in the described temperature compensation plates, the surface that described temperature compensation plates deviates from described support plate is formed with protective layer.
Further, in order to reduce the distortion of described temperature compensation plates, described temperature compensation plates is made of a plurality of sub-blocks, so described temperature compensation plates is divided into the sub-block of some less, because the area of the sub-block of each described temperature compensation plates is less than whole described temperature compensation plates, so the buckling deformation amount of the sub-block of described temperature compensation plates is little, and the sub-block of described temperature compensation plates can being fixed on the described support plate, thereby the distortion of the described temperature compensation plates of Avoids or reduces.
Further, installation and replacement for convenient described temperature compensation plates, described temperature compensation plates is fixed on the described support plate by dismountable fixing part, when described temperature compensation plates generation viscous deformation or damage, can described temperature compensation plates be unloaded from described support plate by described fixing part, change new described temperature compensation plates, to install and to replace conveniently, flexibly described temperature compensation plates; When described temperature compensation plates is made of a plurality of sub-blocks, the sub-block of each described temperature compensation plates is fixed on the described support plate by dismountable fixing part, when the sub-block generation viscous deformation of only having one of them or several described temperature compensation plates or when damaging, the sub-block that only need change one or several the described temperature compensation plates that wherein deforms gets final product, and saves described temperature compensation plates.
Compare with the prior art substrate support structure; in the substrate support structure of the present invention; the surface that described temperature compensation plates deviates from described support plate is formed with protective layer; described protective layer suppresses or prevents that the surface that described temperature compensation plates deviates from described support plate from the epitaxial deposition of III-V compounds of group occuring, thereby reduces or avoid waste to unstripped gas.
See also Fig. 3 and Fig. 4, Fig. 3 is the vertical view of the substrate support structure of an embodiment of the present invention, and Fig. 4 is that Fig. 3 is along the sectional view of B-B ' cutting line.In the present embodiment, whole described temperature compensation plates 22 is one.
As shown in Figure 3; described substrate support structure 2 comprises support plate 21; have temperature compensation plates 22 on the described support plate, have the through hole 23 of accommodating described substrate 24 in the described temperature compensation plates 22, the surface that described temperature compensation plates 22 deviates from described support plate 21 is formed with protective layer 25.In the present embodiment; described protective layer 25 all covers the surface that described temperature compensation plates 22 exposes; when described substrate 24 is carried out epitaxy; described protective layer 25 can suppress or prevent the upper surface generation epitaxial deposition of described temperature compensation plates 22; to reduce or to avoid the waste of unstripped gas, also reduce the cleaning to described temperature compensation plates 22 simultaneously.
In the present embodiment, the material of described substrate 24 is not done concrete restriction, can be sapphire, silicon or gan etc.The material of described temperature compensation plates 22 is the material identical or close with the heat-conduction coefficient of the material of described substrate 24, better, the heat-conduction coefficient of the material of described temperature compensation plates 22 is more than 0.5 times and below 2 times of heat-conduction coefficient of the material of described substrate 24, can guarantee the homogeneity of the surface temperature of described substrate 24, grow the uniform extension of performance, preferably, the material of described temperature compensation plates 22 is identical with the material of described substrate 24, so that described temperature compensation plates 22 is consistent with the heat conductivity of described substrate 24, the homogeneity of the surface temperature of the described substrate 24 of assurance that can be better.
The material of described protective layer 25 should be selected large with III-V compounds of group lattice mismatch described to be deposited or differ larger material with the heat-conduction coefficient of described III-V compounds of group, to avoid unstripped gas in described protective layer 25 reactions and deposition, in the present embodiment, the material of the described substrate 24 of depositing operation is sapphire, need to be on described substrate 24 cvd nitride gallium layer, gan is the III-V compounds of group, better, the material of described protective layer 25 is silicon-dioxide or amorphous or polycrystalline material, because the random crystalline phase of protective layer that amorphous or polycrystalline material form, therefore the III-V compounds of group is difficult to deposition growing on the protective layer 25 of described amorphous or polycrystalline material, wherein, because the high temperature in the reaction chamber requires described protective layer 25 that high fusing point is arranged usually, therefore described amorphous or polycrystalline material are preferably amorphous or polycrystal carborundum; Lattice mismatch between silicon-dioxide and the III-V compounds of group lattice described to be deposited is very serious, and therefore, the III-V compounds of group also is difficult for occuring epitaxy thereon.But the material of described protective layer 25 is not limited to silicon-dioxide or amorphous or polycrystal carborundum; as long as the material of described protective layer 25 and III-V compounds of group lattice mismatch described to be deposited differ larger greatly or with the heat-conduction coefficient of described III-V compounds of group, just can suppress even prevent that described unstripped gas from depositing thereon.
Described temperature compensation plates 22 can be fixed on the described support plate 21, produces distortion to prevent described temperature compensation plates 22.Better, described temperature compensation plates is fixed on the described support plate by dismountable fixing part, to install neatly and to replace described temperature compensation plates 22.Wherein, fixing part can be locating pin and the pilot hole that cooperatively interacts, for example, and as shown in Figure 4, described temperature compensation plates 22 belows are provided with locating pin 26, the upper surface of described support plate 21 is provided with pilot hole 27, described locating pin 26 is inserted described pilot hole 27, with fixing described temperature compensation plates 22, by this fixing part, described temperature compensation plates 22 is installed and replaced to mode by plug, and wherein, the position of locating pin 26 and number are not done concrete restriction; Can also below described temperature compensation plates 22, be provided with pilot hole 27, the upper surface of described support plate 21 is provided with locating pin 26, described locating pin 26 is inserted described pilot hole 27, with fixing described temperature compensation plates 22, can realize equally installing and replace described temperature compensation plates 22 by the mode of plug.Wherein, described fixing part is not limited to locating pin and pilot hole, can also be location hook and the retaining ring that cooperatively interacts, as long as can realize fixing described temperature compensation plates 22 and dismountable function, also within thought range of the present invention.
For the scheme of the present embodiment is described, in the present embodiment, as shown in Figure 3, described through hole 23 has 8, circular array, but the number of described through hole 23 and arrangement mode are not done concrete restriction.
In the present embodiment; described substrate support structure 2 is applicable to all epitaxial deposition process; as at organometallics chemical gaseous phase deposition (MOCVD) if in cvd nitride gallium layer need to as described in temperature compensation plates 22 regulate as described in the depositing operation of substrate 24 surface temperatures, all can adopt the described protective layer 25 of the present embodiment to avoid the waste of unstripped gas.
In the present embodiment, described substrate support structure 2 is used for placing substrate 24 in the technique of deposition III-V compounds of group, wherein, described III-V compounds of group is gan, but be not limited to gan, such as InGaN, aluminium gallium nitride alloy etc., also within thought range of the present invention.
Described substrate support structure 2 in the present embodiment can be used for deposition apparatus 100 and be used for placing substrate 24, can save the unstripped gas in the depositing operation.As shown in Figure 5, described deposition apparatus 100 comprises sealable reaction chamber 101, described substrate support structure 2, be used for the gas supply mechanism 103 to described substrate base feed gas, be used for heating the heating arrangements 104 of described substrate, wherein, described substrate support structure 2 is arranged in the described reaction chamber 101, in described reaction chamber 101, by utilizing described heating arrangements 104 via the described substrate 24 of described substrate support structure 2 heating, and under the condition of high temperature, described gas supply mechanism 103 forms the growing films such as gallium nitride layer to described reaction chamber 101 interior base feed gases with the surface at described substrate 24.In the described deposition apparatus 100 of the present embodiment; 104 pairs of described substrate support structures 2 of described heating arrangements heat; described substrate support structure 2 is with the described substrate 24 of heat transferred and make surface temperature distribution more even of described substrate 24; rise to the temperature of regulation when described substrate 24; the unstripped gas that described gas supply mechanism 103 imports supplies to described substrate 24 surfaces; epitaxy occurs on described substrate 24 surfaces; the growing films such as formation gallium nitride layer have better performance; and; described substrate support structure 2 has described protective layer 25, can save the unstripped gas in the depositing operation.
See also Fig. 6 and Fig. 7, Fig. 6 is the vertical view of the substrate support structure of the another embodiment of the present invention, and Fig. 7 is that Fig. 6 is along the sectional view of C-C ' cutting line.The substrate support structure 3 of described another embodiment is basic identical with the substrate support structure 2 of a described embodiment, and its difference is:
Described temperature compensation plates 32 is made of a plurality of sub-blocks; described protective layer 35 on each described sub-block is a monoblock; so; described temperature compensation plates 32 is divided into plural sub-block; described protective layer 35 is also divided the plural corresponding blocks that is divided into accordingly with described sub-block formed objects; because the area of each sub-block of described temperature compensation plates 32 is less than whole described temperature compensation plates 32; so; the buckling deformation amount of each sub-block of described temperature compensation plates 32 is little, thus the distortion of the described temperature compensation plates 32 of Avoids or reduces.
Because in the present embodiment; described temperature compensation plates 32 is divided into plural sub-block; so the sub-block of each described temperature compensation plates 32 all is fixed on the described support plate 31 by dismountable fixing part; when the sub-block generation viscous deformation of only having one of them or several described temperature compensation plates 32 or when damaging; only need change one or several the described temperature compensation plates 32 that wherein deforms sub-block and on the corresponding blocks of one or several described protective layer 35 get final product, can economical with materials.
In the present embodiment, described temperature compensation plates 32 is circular, and the sub-block of described temperature compensation plates 32 is fan-shaped array centered by the center of circle of described temperature compensation plates 32.The sub-block of described temperature compensation plates 32 is arranged in described temperature compensation plates 32 equably, thereby guarantees the homogeneity of the surface temperature of described substrate 34.
In the present embodiment, the thickness of the sub-block of different described temperature compensation plates 32 can be identical or different, to regulate the performance of the extension of growth on the described substrate 34, because the sub-block of described temperature compensation plates 32 is fan-shaped array centered by the center of circle of described temperature compensation plates 32 in the present embodiment, so the thickness of the sub-block of described temperature compensation plates 32 equates.
In the present embodiment, the described protective layer 35 of described substrate support structure 3 can also reach the beneficial effect of the waste of avoiding unstripped gas.Described substrate support structure 3 in the present embodiment can also be used for deposition apparatus and be used for placing substrate 34, can save equally the unstripped gas in the depositing operation.
See also Fig. 8 and Fig. 9, Fig. 8 is the again vertical view of the substrate support structure of an embodiment of the present invention, and Fig. 9 is that Fig. 8 is along the sectional view of D-D ' cutting line.The substrate support structure 4 of a described again embodiment can be basic identical with the substrate support structure 3 of described another embodiment, and its difference is:
The sub-block of described temperature compensation plates 42 is donut centered by the center of circle of described temperature compensation plates 42 arranges, and also can guarantee the homogeneity of the surface temperature of described substrate 44.
In the present embodiment, the thickness of the sub-block of different described temperature compensation plates 42 can be identical or different, to regulate the performance of the extension of growth on the described substrate 44, because the sub-block of described temperature compensation plates 42 is donut and arranges centered by the center of circle of described support plate 41 in the present embodiment, so the thickness of the sub-block of described temperature compensation plates 42 can be from the center of circle outwards increased or reduce along radius.
In the present embodiment, the described protective layer 45 of described substrate support structure 4 can also reach the beneficial effect of the waste of avoiding unstripped gas, and the distortion of the described temperature compensation plates 42 of energy Avoids or reduces.Described substrate support structure 4 in the present embodiment can also be used for deposition apparatus and be used for placing substrate 44, can save equally the unstripped gas in the depositing operation.
The present invention discloses as above with preferred embodiment, but the present invention and non-limiting above-mentioned embodiment are described, as: as described in temperature compensation plates and as described in support plate can be one-body molded.
Although the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with the claim limited range.
Claims (14)
1. substrate support structure; be used for the technique support substrates at deposition III-V compounds of group; it is characterized in that: described substrate support structure comprises support plate; has temperature compensation plates on the described support plate; has through hole in the described temperature compensation plates; described through hole is used for accommodating substrate, and the surface that described temperature compensation plates deviates from described support plate is formed with protective layer, and is described protective layer used to suppress or to prevent that described temperature compensation plates from deviating from the surface generation III-V compounds of group epitaxial deposition of described support plate.
2. substrate support structure as claimed in claim 1, it is characterized in that: the material of described protective layer is silicon-dioxide or amorphous or polycrystalline material.
3. substrate support structure as claimed in claim 2, it is characterized in that: described amorphous or polycrystalline material are amorphous or polycrystal carborundum.
4. substrate support structure as claimed in claim 2, be characterised in that: described substrate is Sapphire Substrate, gallium nitride substrate or silicon substrate.
5. substrate support structure as claimed in claim 1, it is characterized in that: the heat-conduction coefficient of the material of described temperature compensation plates is more than 0.5 times and below 2 times of heat-conduction coefficient of the material of described substrate.
6. substrate support structure as claimed in claim 5, it is characterized in that: the material of described temperature compensation plates is identical with the material of described substrate.
7. substrate support structure as claimed in claim 1, it is characterized in that: described temperature compensation plates is made of a plurality of sub-blocks, and the described protective layer on each described sub-block is a monoblock.
8. substrate support structure as claimed in claim 7 is characterized in that: described temperature compensation plates is for circular, and described sub-block is fan-shaped array centered by the center of circle of described temperature compensation plates or donut is arranged.
9. substrate support structure as claimed in claim 8, it is characterized in that: described sub-block is fan-shaped array centered by the center of circle of described temperature compensation plates, and the thickness of different sub-blocks is identical.
10. substrate support structure as claimed in claim 8 is characterized in that: described sub-block is donut centered by the center of circle of described temperature compensation plates arranges, and different sub-blocks increase from the center of circle along the outside thickness of radius.
11. such as each described substrate support structure in the claim 1 to 10, it is characterized in that: described temperature compensation plates is fixed on the described support plate by dismountable fixing part.
12. substrate support structure as claimed in claim 11, it is characterized in that: described temperature compensation plates below is provided with locating pin or the location is empty, the upper surface of described support plate is provided with corresponding pilot hole or locating pin, and described locating pin is inserted described pilot hole, with fixing described temperature compensation plates.
13. substrate support structure as claimed in claim 1 is characterized in that: described III-V compounds of group is gan.
14. deposition apparatus, comprise: sealable reaction chamber, as each described substrate support structure in the claim 1 to 13, be used for to as described in substrate base feed gas gas supply mechanism, be used for heating as described in the heating arrangements of substrate, wherein, described substrate support structure is arranged in the described reaction chamber, in described reaction chamber, by utilizing described heating arrangements to heat described substrate via described substrate support structure, and under the condition of high temperature base feed gas, form growing film on the surface of described substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105808788A CN103074673A (en) | 2012-12-26 | 2012-12-26 | Substrate supporting structure and deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105808788A CN103074673A (en) | 2012-12-26 | 2012-12-26 | Substrate supporting structure and deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103074673A true CN103074673A (en) | 2013-05-01 |
Family
ID=48151365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012105808788A Pending CN103074673A (en) | 2012-12-26 | 2012-12-26 | Substrate supporting structure and deposition device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103074673A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103510158A (en) * | 2013-10-15 | 2014-01-15 | 瀚天天成电子科技（厦门）有限公司 | Compatible small-disk base for silicon carbide epitaxial furnace and using method thereof |
| CN104743201A (en) * | 2013-12-30 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray structure compatible with wafers of various dimensions |
| US11417562B2 (en) | 2017-06-23 | 2022-08-16 | Jusung Engineering Co., Ltd. | Substrate supporting apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1782142A (en) * | 2004-11-16 | 2006-06-07 | 住友电气工业株式会社 | Wafer guide, MOCVD equipment, and nitride semiconductor growth method |
| CN101621022A (en) * | 2008-07-04 | 2010-01-06 | 广镓光电股份有限公司 | Combined type chip carrying disk and epitaxy machine platform thereof |
| CN203007479U (en) * | 2012-12-26 | 2013-06-19 | 光达光电设备科技（嘉兴）有限公司 | Substrate supporting structure and deposition device |
-
2012
- 2012-12-26 CN CN2012105808788A patent/CN103074673A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1782142A (en) * | 2004-11-16 | 2006-06-07 | 住友电气工业株式会社 | Wafer guide, MOCVD equipment, and nitride semiconductor growth method |
| CN101621022A (en) * | 2008-07-04 | 2010-01-06 | 广镓光电股份有限公司 | Combined type chip carrying disk and epitaxy machine platform thereof |
| CN203007479U (en) * | 2012-12-26 | 2013-06-19 | 光达光电设备科技（嘉兴）有限公司 | Substrate supporting structure and deposition device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103510158A (en) * | 2013-10-15 | 2014-01-15 | 瀚天天成电子科技（厦门）有限公司 | Compatible small-disk base for silicon carbide epitaxial furnace and using method thereof |
| CN104743201A (en) * | 2013-12-30 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray structure compatible with wafers of various dimensions |
| US11417562B2 (en) | 2017-06-23 | 2022-08-16 | Jusung Engineering Co., Ltd. | Substrate supporting apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101349945B1 (en) | Film forming apparatus and film forming method | |
| EP2549522A1 (en) | Semiconductor thin-film manufacturing method, seminconductor thin-film manufacturing apparatus, susceptor, and susceptor holding tool | |
| US20110259879A1 (en) | Multi-Zone Induction Heating for Improved Temperature Uniformity in MOCVD and HVPE Chambers | |
| US8328943B2 (en) | Film forming apparatus and method | |
| US9607832B2 (en) | Epitaxial wafer manufacturing device and manufacturing method | |
| US20120146191A1 (en) | Apparatus and method for manufacturing compound semiconductor, and compound semiconductor manufactured thereby | |
| WO2012125771A2 (en) | Substrate support assembly for thin film deposition systems | |
| EP3223301B1 (en) | Film-forming apparatus | |
| CN104641454A (en) | Susceptor, crystal growing apparatus, and crystal growing method | |
| KR101046068B1 (en) | Susceptor for chemical vapor deposition apparatus and chemical vapor deposition apparatus having same | |
| JP4731076B2 (en) | Deposition method and deposition apparatus for depositing semiconductor film by CVD method | |
| US10692745B2 (en) | Substrate processing apparatus | |
| CN103074673A (en) | Substrate supporting structure and deposition device | |
| CN203007479U (en) | Substrate supporting structure and deposition device | |
| US20210010158A1 (en) | Silicon carbide epitaxial growth device and method of manufacturing silicon carbide epitaxial wafer | |
| KR20140102880A (en) | Method of manufacturing a semiconductor light emitting device and chemical vapor deposition apparatus | |
| JP2012216744A (en) | Vapor growth device and vapor growth method | |
| JP2013026358A (en) | Shower plate and vapor phase growth apparatus | |
| CN105568371A (en) | Graphite disc for improving mean value of wavelengths of all rings of silicon-based nitride | |
| US10741396B2 (en) | Substrate processing apparatus | |
| US20130171348A1 (en) | Thin film deposition apparatus and method for using the same | |
| US12065732B2 (en) | Film forming method and film forming apparatus | |
| US20150013608A1 (en) | Ceramic heater | |
| CN205313714U (en) | Improve graphite plate of each ring wavelength mean value of silica -based nitride | |
| CN113169051A (en) | Film formation method, film formation apparatus, base unit, and spacer set used in base unit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130501 |