CN103035626B - 包括集成波导的半导体封装件 - Google Patents
包括集成波导的半导体封装件 Download PDFInfo
- Publication number
- CN103035626B CN103035626B CN201210365780.0A CN201210365780A CN103035626B CN 103035626 B CN103035626 B CN 103035626B CN 201210365780 A CN201210365780 A CN 201210365780A CN 103035626 B CN103035626 B CN 103035626B
- Authority
- CN
- China
- Prior art keywords
- integrated circuit
- flip chip
- functional module
- encapsulating piece
- chip encapsulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 123
- 238000004891 communication Methods 0.000 claims abstract description 145
- 238000004519 manufacturing process Methods 0.000 claims abstract description 119
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 230000005540 biological transmission Effects 0.000 claims abstract description 76
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 17
- 230000004888 barrier function Effects 0.000 claims description 29
- 238000005476 soldering Methods 0.000 claims description 26
- 239000000126 substance Substances 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 9
- 238000005538 encapsulation Methods 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 description 175
- 238000010168 coupling process Methods 0.000 description 39
- 238000005859 coupling reaction Methods 0.000 description 39
- 230000008878 coupling Effects 0.000 description 33
- 230000003068 static effect Effects 0.000 description 29
- 239000013078 crystal Substances 0.000 description 26
- 239000004020 conductor Substances 0.000 description 20
- 230000005611 electricity Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 15
- 239000011505 plaster Substances 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 14
- 230000000644 propagated effect Effects 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 238000006073 displacement reaction Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 9
- 238000005259 measurement Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000011084 recovery Methods 0.000 description 7
- 229910001369 Brass Inorganic materials 0.000 description 6
- 239000012190 activator Substances 0.000 description 6
- 239000010951 brass Substances 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000011664 signaling Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PXNDALNSUJQINT-UHFFFAOYSA-N [Sc].[Ta] Chemical compound [Sc].[Ta] PXNDALNSUJQINT-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052586 apatite Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- VSIIXMUUUJUKCM-UHFFFAOYSA-D pentacalcium;fluoride;triphosphate Chemical compound [F-].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O VSIIXMUUUJUKCM-UHFFFAOYSA-D 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 1
- 229940074439 potassium sodium tartrate Drugs 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000036299 sexual function Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
- H01L25/0652—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
- H01L25/0655—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
- H01P1/182—Waveguide phase-shifters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/12—Hollow waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/12—Hollow waveguides
- H01P3/121—Hollow waveguides integrated in a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6683—High-frequency adaptations for monolithic microwave integrated circuit [MMIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/141—Disposition
- H01L2224/1418—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/14181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/171—Disposition
- H01L2224/1718—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/17181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
- H01L2225/06531—Non-galvanic coupling, e.g. capacitive coupling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/023—Fin lines; Slot lines
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/248,673 US8508029B2 (en) | 2011-09-29 | 2011-09-29 | Semiconductor package including an integrated waveguide |
US13/248,673 | 2011-09-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103035626A CN103035626A (zh) | 2013-04-10 |
CN103035626B true CN103035626B (zh) | 2015-11-11 |
Family
ID=46798950
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210365780.0A Active CN103035626B (zh) | 2011-09-29 | 2012-09-27 | 包括集成波导的半导体封装件 |
CN2012204996501U Expired - Lifetime CN202996830U (zh) | 2011-09-29 | 2012-09-27 | 集成电路 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012204996501U Expired - Lifetime CN202996830U (zh) | 2011-09-29 | 2012-09-27 | 集成电路 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8508029B2 (zh) |
EP (1) | EP2575170B1 (zh) |
KR (1) | KR101355060B1 (zh) |
CN (2) | CN103035626B (zh) |
HK (1) | HK1180110A1 (zh) |
TW (1) | TWI478315B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9570420B2 (en) | 2011-09-29 | 2017-02-14 | Broadcom Corporation | Wireless communicating among vertically arranged integrated circuits (ICs) in a semiconductor package |
US8670638B2 (en) | 2011-09-29 | 2014-03-11 | Broadcom Corporation | Signal distribution and radiation in a wireless enabled integrated circuit (IC) using a leaky waveguide |
US9075105B2 (en) | 2011-09-29 | 2015-07-07 | Broadcom Corporation | Passive probing of various locations in a wireless enabled integrated circuit (IC) |
US9318785B2 (en) | 2011-09-29 | 2016-04-19 | Broadcom Corporation | Apparatus for reconfiguring an integrated waveguide |
US8508029B2 (en) * | 2011-09-29 | 2013-08-13 | Broadcom Corporation | Semiconductor package including an integrated waveguide |
US20160249084A1 (en) * | 2015-02-25 | 2016-08-25 | Yahoo! Inc. | Managing ad campaigns via mobile devices |
US10393772B2 (en) * | 2016-02-04 | 2019-08-27 | Advantest Corporation | Wave interface assembly for automatic test equipment for semiconductor testing |
US11921325B2 (en) * | 2020-02-27 | 2024-03-05 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device and method of making |
CN111697301A (zh) * | 2020-07-16 | 2020-09-22 | 盛纬伦(深圳)通信技术有限公司 | 一种基于脊波导的无介质板宽带毫米波芯片封装结构 |
CN113193347B (zh) * | 2021-04-14 | 2022-05-03 | 电子科技大学 | 基于人工电磁结构和腔体奇模激励的双波束背腔式天线 |
US11862557B2 (en) * | 2021-09-23 | 2024-01-02 | Apple Inc. | Selectable monolithic or external scalable die-to-die interconnection system methodology |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5568107A (en) * | 1995-05-01 | 1996-10-22 | Apple Computer, Inc. | Transmission line having impedance set by reference plane fenestration |
CN1585123A (zh) * | 2003-08-19 | 2005-02-23 | 恩益禧电子股份有限公司 | 倒装芯片型半导体器件及其制造工艺和电子产品制造工艺 |
US20050245063A1 (en) * | 2004-04-29 | 2005-11-03 | Chinthakindi Anil K | Method for forming suspended transmission line structures in back end of line processing |
US20090218407A1 (en) * | 2008-02-29 | 2009-09-03 | Broadcom Corporation | Integrated circuit with millimeter wave and inductive coupling and methods for use therewith |
CN202996830U (zh) * | 2011-09-29 | 2013-06-12 | 美国博通公司 | 集成电路 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5760478A (en) * | 1996-08-20 | 1998-06-02 | International Business Machines Corporation | Clock skew minimization system and method for integrated circuits |
US6049639A (en) * | 1997-12-19 | 2000-04-11 | Intel Corporation | Method and apparatus providing optical input/output through the back side of an integrated circuit die |
US6090636A (en) * | 1998-02-26 | 2000-07-18 | Micron Technology, Inc. | Integrated circuits using optical waveguide interconnects formed through a semiconductor wafer and methods for forming same |
JP3473516B2 (ja) * | 1999-09-20 | 2003-12-08 | 日本電気株式会社 | 半導体集積回路 |
US6624508B2 (en) * | 2000-01-03 | 2003-09-23 | Sophia Wireless, Inc. | High frequency, low cost package for semiconductor devices |
US6353264B1 (en) * | 2000-07-18 | 2002-03-05 | Trw Inc. | Pseudomonolithic wafer scale module |
EP1187206B1 (fr) * | 2000-09-05 | 2009-12-09 | Nxp B.V. | Dispositif intégré de protection électromagnétique |
US6624444B1 (en) * | 2002-03-28 | 2003-09-23 | Intel Corporation | Electrical-optical package with capacitor DC shunts and associated methods |
JP3848210B2 (ja) * | 2002-05-29 | 2006-11-22 | キヤノン株式会社 | 電子回路基板 |
US7653272B2 (en) * | 2002-09-19 | 2010-01-26 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Highly parallel optical communication system with intracard and intercard communications |
GB0224724D0 (en) * | 2002-10-23 | 2002-12-04 | Plasma Antennas Ltd | An electromagnetic switch |
US7070207B2 (en) * | 2003-04-22 | 2006-07-04 | Ibiden Co., Ltd. | Substrate for mounting IC chip, multilayerd printed circuit board, and device for optical communication |
JP2006053662A (ja) * | 2004-08-10 | 2006-02-23 | Matsushita Electric Ind Co Ltd | 多重プロセッサ |
JP4197668B2 (ja) * | 2004-08-17 | 2008-12-17 | 株式会社東芝 | インターフェイスモジュール付lsiパッケージとインターフェイスモジュール及び接続保持機構 |
JP4365750B2 (ja) * | 2004-08-20 | 2009-11-18 | ローム株式会社 | 半導体チップの製造方法、および半導体装置の製造方法 |
JP4626490B2 (ja) * | 2005-11-07 | 2011-02-09 | ソニー株式会社 | 回路装置 |
CN100458484C (zh) * | 2005-12-23 | 2009-02-04 | 国际商业机器公司 | 光电板及其制造方法 |
CN101395759B (zh) * | 2006-02-06 | 2011-06-22 | 三菱电机株式会社 | 高频模件 |
US7974587B2 (en) * | 2006-12-30 | 2011-07-05 | Broadcom Corporation | Local wireless communications within a device |
US8222079B2 (en) * | 2007-09-28 | 2012-07-17 | International Business Machines Corporation | Semiconductor device and method of making semiconductor device |
US8679861B2 (en) * | 2007-11-29 | 2014-03-25 | International Business Machines Corporation | Semiconductor chip repair by stacking of a base semiconductor chip and a repair semiconductor chip |
US7750435B2 (en) * | 2008-02-27 | 2010-07-06 | Broadcom Corporation | Inductively coupled integrated circuit and methods for use therewith |
US7733265B2 (en) * | 2008-04-04 | 2010-06-08 | Toyota Motor Engineering & Manufacturing North America, Inc. | Three dimensional integrated automotive radars and methods of manufacturing the same |
US8450846B2 (en) * | 2008-06-19 | 2013-05-28 | Broadcom Corporation | Method and system for communicating via flip-chip die and package waveguides |
US8508422B2 (en) * | 2009-06-09 | 2013-08-13 | Broadcom Corporation | Method and system for converting RF power to DC power utilizing a leaky wave antenna |
US8521106B2 (en) * | 2009-06-09 | 2013-08-27 | Broadcom Corporation | Method and system for a sub-harmonic transmitter utilizing a leaky wave antenna |
JP2011100989A (ja) * | 2009-10-09 | 2011-05-19 | Renesas Electronics Corp | 半導体装置 |
US8267583B2 (en) | 2009-10-19 | 2012-09-18 | Oracle America, Inc. | Three-dimensional macro-chip including optical interconnects |
-
2011
- 2011-09-29 US US13/248,673 patent/US8508029B2/en not_active Expired - Fee Related
-
2012
- 2012-08-03 EP EP12005674.2A patent/EP2575170B1/en active Active
- 2012-08-31 TW TW101131861A patent/TWI478315B/zh active
- 2012-09-27 CN CN201210365780.0A patent/CN103035626B/zh active Active
- 2012-09-27 CN CN2012204996501U patent/CN202996830U/zh not_active Expired - Lifetime
- 2012-09-27 KR KR1020120108073A patent/KR101355060B1/ko active IP Right Grant
-
2013
- 2013-06-24 HK HK13107345.2A patent/HK1180110A1/zh not_active IP Right Cessation
- 2013-07-03 US US13/935,164 patent/US20140027903A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5568107A (en) * | 1995-05-01 | 1996-10-22 | Apple Computer, Inc. | Transmission line having impedance set by reference plane fenestration |
CN1585123A (zh) * | 2003-08-19 | 2005-02-23 | 恩益禧电子股份有限公司 | 倒装芯片型半导体器件及其制造工艺和电子产品制造工艺 |
US20050245063A1 (en) * | 2004-04-29 | 2005-11-03 | Chinthakindi Anil K | Method for forming suspended transmission line structures in back end of line processing |
US20090218407A1 (en) * | 2008-02-29 | 2009-09-03 | Broadcom Corporation | Integrated circuit with millimeter wave and inductive coupling and methods for use therewith |
CN202996830U (zh) * | 2011-09-29 | 2013-06-12 | 美国博通公司 | 集成电路 |
Also Published As
Publication number | Publication date |
---|---|
US20140027903A1 (en) | 2014-01-30 |
CN103035626A (zh) | 2013-04-10 |
HK1180110A1 (zh) | 2013-10-11 |
CN202996830U (zh) | 2013-06-12 |
EP2575170A2 (en) | 2013-04-03 |
EP2575170A3 (en) | 2013-10-16 |
TW201314862A (zh) | 2013-04-01 |
US20130082379A1 (en) | 2013-04-04 |
TWI478315B (zh) | 2015-03-21 |
KR20130035218A (ko) | 2013-04-08 |
EP2575170B1 (en) | 2018-02-21 |
US8508029B2 (en) | 2013-08-13 |
KR101355060B1 (ko) | 2014-01-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103035626B (zh) | 包括集成波导的半导体封装件 | |
US9318785B2 (en) | Apparatus for reconfiguring an integrated waveguide | |
US8670638B2 (en) | Signal distribution and radiation in a wireless enabled integrated circuit (IC) using a leaky waveguide | |
CN102543965B (zh) | 具有减小的rf损耗的射频封装 | |
CN103036636A (zh) | 无线使能集成电路(ic)中的信号分配和发射 | |
EP3905285B1 (en) | High current, low equivalent series resistance printed circuit board coil for power transfer application | |
CN109217905A (zh) | 用于近场通信系统的锥形同轴发射结构 | |
ITVI20120060A1 (it) | Sistema elettronico avente un' aumentata connessione tramite l'uso di canali di comunicazione orizzontali e verticali | |
EP4340012A2 (en) | Component carrier with integrated antenna arrangement, electronic apparatus, radio communication method | |
CN103035609B (zh) | 半导体封装件中垂直配置的集成电路之间的无线通信 | |
KR20110102384A (ko) | 반도체 장치, 그 제조 방법, 밀리파 유전체 내 전송 장치, 그 제조 방법, 및 밀리파 유전체 내 전송 시스템 | |
CN107369673A (zh) | 设置有天线的集成电路封装装置及其制造方法 | |
WO2012036221A1 (ja) | アンテナ装置、及び、通信装置 | |
US20150276856A1 (en) | Passive probing of various locations in a wireless enabled integrated circuit (ic) | |
CN112670273A (zh) | 隔离结构、数字隔离器及隔离结构的制造方法 | |
CN205232575U (zh) | 电子装置、电子系统和电子设施 | |
CN205755064U (zh) | 元件载体 | |
US9888516B1 (en) | Redundant contactless communication |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1180110 Country of ref document: HK |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: GR Ref document number: 1180110 Country of ref document: HK |
|
TR01 | Transfer of patent right |
Effective date of registration: 20170316 Address after: Singapore Singapore Patentee after: Avago Technologies Fiber IP Singapore Pte. Ltd. Address before: American California Patentee before: Zyray Wireless Inc. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181024 Address after: Singapore Singapore Patentee after: Annwa high tech Limited by Share Ltd Address before: Singapore Singapore Patentee before: Avago Technologies Fiber IP Singapore Pte. Ltd. |
|
TR01 | Transfer of patent right |