CN103022163A - Crystal silicon solar cell and preparation method thereof - Google Patents
Crystal silicon solar cell and preparation method thereof Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 162
- 239000010703 silicon Substances 0.000 title claims abstract description 162
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 161
- 239000013078 crystal Substances 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims description 13
- 229910021363 Ti-Si intermetallic compound Inorganic materials 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 238000005245 sintering Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 26
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
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- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention provides a crystal silicon solar cell which comprises a back side electrode, an aluminum back field, a P-type silicon substrate, an N-type silicon layer, a Ti-Si intermetallic compound layer, an antireflection layer and a front side electrode sequentially from bottom to top; a P-N junction is formed between the P-type silicon substrate and the N-type silicon layer; and the front side electrode permeates the antireflection layer to be in contact with the Ti-Si intermetallic compound layer. According to the crystal silicon solar cell provided by the invention, the Ti-Si intermetallic compound layer with low Schottky barrier is formed between the N-type silicon layer and the front side electrode, the contact resistance of the crystal silicon solar cell can be lowered effectively; and the photoelectric conversion efficiency of the crystal silicon solar cell is improved.
Description
Technical field
The invention belongs to technical field of solar batteries, relate in particular to a kind of crystal silicon solar batteries and preparation method thereof.
Background technology
Crystal silicon solar batteries has been able to rapid broad development at present as main solar energy power generating unit.Solar battery front side is as the one side that directly receives solar energy, and it is generally sandwich construction, to reach the widest reception spectral line and minimum light reflection consumption.The front of conventional commercial crystal silicon solar batteries sheet comprises silver electrode grid line, nonconducting antireflection layer, n type diffused layer, the four layers of primary structure in P-N interface usually.Front electrode is as the important component part of crystal silicon solar batteries, the ratio of width to height of contact resistance between electrode and N-type silicon, the conductivity of electrode itself and electrode has direct impact to the electricity conversion of crystal silicon solar batteries, becomes one of main direction of studying of the sector.
At present, the manufacture method of commercial crystal silicon solar batteries front electrode, usually adopt printing or inkjet printing conductive silver paste to form the large as far as possible grid line structure of depth-width ratio, pass through subsequently near the Fast Sintering the room temperature to 800 ℃, form the conductive electrode with the n type diffused layer close contact.In this sintering process, contained corrosivity frit in the conductive silver paste, such as lead borosilicate glass material commonly used, under molten condition, the antireflective coating (ARC) of dissolving N-type silicon face and the Ag powder in the slurry, separate out Ag at the N-type silicon face in the temperature-fall period, form the Ag island of reverse pyramid, photogenerated current is conducted to the Ag gate electrode line on upper strata.But because the contact resistance between metal A g and the Si is larger, so that series resistance is larger in the whole loop, the whole electricity conversion of this crystal silicon solar batteries reduces greatly.At present, the Ag electrode of the cell piece produced of this process and the contact resistance of front side of silicon wafer are 0.3-0.4m Ω cm
2
Summary of the invention
The invention solves the lower technical problem of electricity conversion that contact resistance between the Ag electrode that exists in the prior art and the N-type silicon causes more greatly crystal silicon solar batteries.
The invention provides a kind of crystal silicon solar batteries, described crystal silicon solar batteries comprises backplate, aluminium back surface field, P type silicon substrate, N-type silicon layer, Ti-Si intermetallic compounds layer, antireflection layer and front electrode from bottom to up successively, be formed with the P-N knot between described P type silicon substrate and the N-type silicon layer, front electrode penetrates described antireflection layer and contacts with the Ti-Si intermetallic compounds layer.
The present invention also provides the preparation method of described crystal silicon solar batteries, may further comprise the steps:
A, P type surface of silicon is carried out making herbs into wool, diffusion and dephosphorization silex glass, form the N-type silicon layer in P type surface of silicon, the interface of P type silicon substrate and N-type silicon layer forms P-N and ties;
B, form the metal Ti layer in the N-type silicon surface, then heat-treat, form the Ti-Si intermetallic compounds layer in the N-type silicon surface;
C, carry out plasma enhanced chemical vapor deposition on Ti-Si intermetallic compounds layer surface, form antireflection layer;
D, at antireflection layer surface printing front electrode, in P type surface of silicon printing aluminium back surface field and backplate, front electrode penetrates described antireflection layer and contacts with the Ti-Si intermetallic compounds layer behind the sintering.
Crystal silicon solar batteries provided by the invention, by between N-type silicon layer and front electrode, forming the Ti-Si intermetallic compounds layer of one deck low Schottky barrier, can effectively reduce on the one hand the contact resistance that directly contacts between Ag and the Si, thus the electricity conversion of Effective Raise crystal silicon solar batteries of the present invention; On the other hand, the Ti-Si intermetallic compounds layer is as a kind of stable conductive layer, can effectively stop in the conductive silver paste impurity composition to the diffusion of N-type silicon, avoids in the N-type silicon few son compound at extrinsic region, prolong minority carrier life time, reduce in the conductive silver paste for the sensitiveness of impurity content.
Description of drawings
Fig. 1 is the structural representation of crystal silicon solar batteries provided by the invention.
Fig. 2 is the structural representation after N-type silicon layer 3 surfaces form metal Ti layer 7 in the embodiment of the invention 1.
Fig. 3 is the structural representation after N-type silicon layer 3 surfaces form Ti-Si intermetallic compound 5 among the present invention.
Fig. 4 is the structural representation after Ti-Si intermetallic compounds layer 5 surfaces form antireflection layer 4 among the present invention.
Fig. 5 is the structural representation after N-type silicon layer 3 surfaces form mask 10 in the embodiment of the invention 2.
Fig. 6 is the structural representation after mask 10 forms metal Ti layer 7 in the embodiment of the invention 2.
Embodiment
The invention provides a kind of crystal silicon solar batteries, as shown in Figure 1, described crystal silicon solar batteries comprises backplate 9, aluminium back surface field 8, P type silicon substrate 1, N-type silicon layer 3, Ti-Si intermetallic compounds layer 5, antireflection layer 4 and front electrode 6 from bottom to up successively, be formed with P-N knot 2 between described P type silicon substrate 1 and the N-type silicon layer 3, front electrode 6 penetrates described antireflection layer 4 and contacts with Ti-Si intermetallic compounds layer 5.
At present, for improving the electricity conversion of crystal silicon solar batteries, except needing electrode to have extremely low self low resistance, also need to form between itself and the silicon chip good ohmic contact, namely has lower contact resistance, thereby reduce the series resistance in the whole loop, reduce current loss, improve the whole electricity conversion of crystal silicon solar batteries sheet.At present, the Ag electrode penetrates antireflection layer in the various solar battery sheets of the prior art, directly contacts with N-shaped silicon, and its contact resistance is 0.3-0.4m Ω cm
2
And among the present invention, by between N-type silicon layer 3 and front electrode 6, forming the Ti-Si intermetallic compounds layer 5 of one deck low Schottky barrier, can effectively reduce on the one hand the contact resistance that directly contacts between metal electrode and the nonmetal Si, thus the electricity conversion of Effective Raise crystal silicon solar batteries of the present invention; On the other hand, Ti-Si intermetallic compounds layer 5 is as a kind of stable conductive layer, can effectively stop in the electrode slurry impurity composition to 3 diffusions of N-type silicon layer, avoid few sub compound at extrinsic region in the N-type silicon layer 3, prolong minority carrier life time, reduce in the electrode slurry for the sensitiveness of impurity content.
Particularly, among the present invention, the pattern of described Ti-Si intermetallic compounds layer 5 overlaps with the pattern of front electrode 6 in the normal direction of described crystal silicon solar batteries.Under the preferable case, the grid line width of Ti-Si intermetallic compounds layer 3 be front electrode 6 the grid line width ± 20 μ m in.More preferably in the situation, the grid line width of Ti-Si intermetallic compounds layer 3 be front electrode 6 the grid line width ± 10 μ m in.Under the most preferred case, the grid line width of Ti-Si intermetallic compounds layer 3 be front electrode 6 the grid line width ± 5 μ m in.
Among the present invention, because the self-conductance rate of Ti-Si intermetallic compound is less than Ag, therefore the thickness of Ti-Si intermetallic compounds layer 3 need not excessive, otherwise can increase the series resistance of cell piece, can not be excessively thin, otherwise do not have the effect that reduces contact resistance between front electrode 6 and the N-type silicon layer 3.Under the preferable case, the thickness of described Ti-Si intermetallic compounds layer 3 is 0.01-0.08 μ m, more preferably 0.02-0.03 μ m.
The various antireflection layer materials that the material of described antireflection layer 4 is commonly used for those skilled in the art, the present invention does not have particular determination.For example, described antireflection layer 4 is silicon nitride layer.Antireflection layer 4 can pass through PCVD (PECVD) and form.The thickness of described antireflection layer 4 is 70-90nm, and the film with this thickness has optical functional, and reflection of light is greatly reduced, and the short circuit current of battery and output obviously increase, thus the Effective Raise electricity conversion.
The present invention also provides the preparation method of described crystal silicon solar batteries, may further comprise the steps:
A, making herbs into wool, diffusion and dephosphorization silex glass are carried out in P type silicon substrate 1 surface, form N-type silicon layer 3 on P type silicon substrate 1 surface, P type silicon substrate 1 forms P-N knot 2 with the interface of N-type silicon layer 3;
B, form metal Ti layers 7 on N-type silicon layer 3 surface, then heat-treat, form Ti-Si intermetallic compounds layers 5 on N-type silicon layer 3 surfaces;
C, carry out plasma enhanced chemical vapor deposition on Ti-Si intermetallic compounds layer 5 surfaces, form antireflection layer 4;
D, at antireflection layer 4 surface printing front electrodes 6, in P type silicon substrate 1 surface printing aluminium back surface field 8 and backplate 9, front electrode 6 penetrates described antireflection layer 4 and contacts with Ti-Si intermetallic compounds layer 5 behind the sintering.
Among the present invention, by directly carrying out surface wool manufacturing, diffusion and dephosphorization silex glass operation at P type silicon substrate 1, can form N-type layer 3 on P type silicon substrate 1 surface, and P type silicon substrate 1 namely forms P-N knot 2 with the interface of N-type silicon layer 3, its sheet resistance is 10-150 Ω/, is 30-100 Ω/ under the preferable case.
Among the present invention, the method that forms metal Ti layer 7 on N-type silicon layer 3 surfaces can adopt the whole bag of tricks commonly used in the prior art, for example can be physical vapor deposition (PVD), printing, spraying or inkjet printing.Because PVD can accurately control the thickness of sedimentary deposit, effectively reduces the raw material consumption, so the preferred PVD that adopts among the present invention.The method of described printing, spraying or inkjet printing is conventionally known to one of skill in the art, and its concrete steps are as be shown in the examples, repeat no more herein.
As a kind of preferred implementation of the present invention, for accurately guaranteeing the pattern form of Ti-Si intermetallic compounds layer 5, further comprising the steps of: as before N-type silicon layer 3 surfaces form metal Ti layer 7, to adopt photoresist to prepare the step of mask 10 on N-type silicon layer 3 surfaces.The pattern of mask 10 is just in time fully opposite with the pattern of front electrode 6.
Among the present invention, metal Ti layer 7 is used for being converted into Ti-Si intermetallic compounds layer 5 at subsequent step, thereby reduce the contact resistance between front electrode 6 and the N-type silicon layer 3, therefore, under the preferable case, the metal Ti layer 7 on N-type silicon layer 3 surfaces need not to cover its all surface, only needs to get final product with the metal Ti layer 7 that front electrode 6 has identical patterns in the 3 surface formation of N-type silicon layer.
The method according to this invention after metal Ti layer 7 is carried out in the 3 surface formation of N-type silicon layer, is then heat-treated.In the heat treatment process, the Si atomic reaction on the Ti atom in the metal Ti layer 7 and N-type silicon layer 3 surfaces namely obtains described Ti-Si intermetallic compounds layer 5.Heat treated temperature is unsuitable too high, thereby prevents that on the one hand the fusing point that heat treatment temperature is higher than silicon chip from reducing silicon chip character, prevents that on the other hand the thickness of the Ti-Si intermetallic compounds layer 5 that forms is excessive.Therefore, under the preferable case, described heat treated temperature is 650-850 ℃, and the time is 3-12s.More preferably in the situation, described heat treated temperature is 680-800 ℃, and the time is 5-10s.
Among the present invention, if excessive at the thickness of N-type silicon layer 3 surperficial formed metal Ti layers 7, after heat treatment was finished, also residue had completely metal Ti of part unreacted, also comprised this moment: the step that adopts the unnecessary unreacted metal Ti of diluted acid flush away.
After N-type silicon layer 3 surfaces form Ti-Si intermetallic compounds layer 5, then carry out pecvd process, at N-type silicon layer 3 and Ti-Si intermetallic compounds layer 5 surface coverage one deck antireflection layers 4.Described pecvd process is directly finished by PECVD equipment, and its technique is as well known to those skilled in the art.
Among the present invention, metal Ti layer 7 is converted into Ti-Si intermetallic compounds layer 5, its pattern is identical with the pattern of front electrode 6, therefore, in the process of printing front electrode 6, the printing zone of front electrode 6 should overlap in the normal direction of described crystal silicon solar batteries with the pattern of Ti-Si intermetallic compounds layer 5, contacts with Ti-Si intermetallic compounds layer 5 to guarantee the front electrode 6 that penetrates antireflection layer 4 in the sintering process.
Among the present invention, the electrode slurry that printing front electrode 6 and backplate 9 adopt is conventionally known to one of skill in the art, all can directly adopt various conductive silver pastes commonly used in the prior art, and the front electrode 6 and the backplate 9 that namely form are silver electrode.
Particularly, contain silver powder particles, glass dust and organic carrier in the described conductive silver paste.Cell piece behind the printing conductive silver slurry can not directly use, and needs through oversintering.In the sintering process, be printed in the glass powder corrosion dissolution antireflective coating in the conductive silver paste on antireflection layer 4 surfaces, ooze under the silver powder particles in the slurry, in the temperature-fall period, oversaturated frit is separated out Ag on Ti-Si intermetallic compounds layer 5 surfaces, namely obtains front electrode of solar battery 6 provided by the invention.Similarly, in the sintering process, the backplate 9 that is printed in aluminium back surface field 8 surfaces also can penetrate described aluminium back surface field 8, and directly contacts with described P type silicon substrate 1.
Among the present invention, the various sintering methods that described sintering can adopt those skilled in the art to commonly use.For example, described sintering can carry out in meshbeltfurnace.Under the preferable case, the maximum temperature of described sintering is 700-780 ℃, and the sintering time under the maximum temperature is 3-8s.
As shown in table 1, the contact resistance of crystal silicon solar batteries provided by the invention is 0.20-0.25 m Ω cm
2
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
P type silicon substrate 1 surface is formed making herbs into wool, diffusion, dephosphorization silex glass, form N-type silicon layer 3 on P type silicon substrate 1 surface, P type silicon substrate 1 forms P-N knot 2 with the interface of N-type silicon layer 3, and its sheet resistance is 50 Ω/.Then contain the slurry of Ti metallic particles in the 3 positive printings of N-type silicon layer according to the pattern of front electrode 6, print thickness＜5 μ m forms metal Ti layer 7 at silicon chip surface, obtains structure shown in Figure 2.Then the cell piece that the surface is printed on metal Ti layer 7 is put into vacuum heat treatment furnace, organic component in the removal metal Ti that progressively the heats up layer 7, be warming up to 700 ℃ of lower heat treatment 5s, forming thickness is the Ti-Si intermetallic compounds layer 5 of 0.05 μ m, with the unnecessary unreacted metal Ti of diluted acid flush away, obtain structure shown in Figure 3.Then carrying out pecvd process, is the antireflection layer 4 of 70nm at the silicon chip surface deposit thickness, obtains structure shown in Figure 4.Last back up aluminium back surface field 8 and backplate 9 at P type silicon substrate 1, at antireflection layer 4 surface printing front electrodes 6, then whole the immigration in the meshbeltfurnace carried out sintering processes, the sintering maximum temperature is 780 ℃, sintering time is 3s under the maximum temperature, obtain having the crystal silicon solar batteries of structure shown in Figure 1, be designated as S1.
P type silicon substrate 1 surface is formed making herbs into wool, diffusion, dephosphorization silex glass, form N-type silicon layer 3 on P type silicon substrate 1 surface, P type silicon substrate 1 forms P-N knot 2 with the interface of N-type silicon layer 3, and its sheet resistance is 50 Ω/.Then at N-type silicon layer 3 positive photoresist preparation and the masks 10 that front electrode 6 has complete opposite pattern of adopting, obtain as shown in Figure 5 structure.The silicon chip that the surface is had mask 10 is put into vacuum evaporator, plated film vacuum degree 2 * 10
-3Pa plates apart from 41mm, evaporation electric current 25A, and evaporation time 30s, forming thickness is the metal Ti layer 7 of 0.04um, obtains structure shown in Figure 6.Then remove mask 10, and the silicon chip that the surface is coated with the metal Ti layer 7 identical with front electrode 6 patterns is put into vacuum heat treatment furnace, 800 ℃ of lower heat treatment 7s, forming thickness is the Ti-Si intermetallic compounds layer 5 of 0.07 μ m, obtains structure shown in Figure 3.Silicon chip after the heat treatment is carried out pecvd process, and deposit thickness is the antireflection layer 4 of 80nm, obtains structure shown in Figure 4.Last back up aluminium back surface field 8 and backplate 9 at P type silicon substrate 1, at antireflection layer 4 surface printing front electrodes 6, then whole the immigration in the meshbeltfurnace carried out sintering processes, the sintering maximum temperature is 700 ℃, sintering time is 8s under the maximum temperature, obtain having the crystal silicon solar batteries of structure shown in Figure 1, be designated as S2.
P type silicon substrate 1 surface is formed making herbs into wool, diffusion, dephosphorization silex glass, form N-type silicon layer 3 on P type silicon substrate 1 surface, P type silicon substrate 1 forms P-N knot 2 with the interface of N-type silicon layer 3, and its sheet resistance is 50 Ω/.Then contain the ink of Ti metallic particles in the 3 positive printings of N-type silicon layer according to the pattern of front electrode 6, print thickness＜8 μ m forms metal Ti layer 7 at silicon chip surface, obtains structure shown in Figure 2.Then the cell piece that the surface is printed on metal Ti layer 7 is put into vacuum heat treatment furnace, organic component in the removal metal Ti that progressively the heats up layer 7, be warming up to 850 ℃ of lower heat treatment 5s, forming thickness is the Ti-Si intermetallic compounds layer 5 of 0.07 μ m, with the unnecessary unreacted metal Ti of diluted acid flush away, obtain structure shown in Figure 3.Then carrying out pecvd process, is the antireflection layer 4 of 70nm at the silicon chip surface deposit thickness, obtains structure shown in Figure 4.Last back up aluminium back surface field 8 and backplate 9 at P type silicon substrate 1, at antireflection layer 4 surface printing front electrodes 6, then whole the immigration in the meshbeltfurnace carried out sintering processes, the sintering maximum temperature is 780 ℃, sintering time is 3s under the maximum temperature, obtain having the crystal silicon solar batteries of structure shown in Figure 1, be designated as S3.
P type silicon substrate 1 surface is formed making herbs into wool, diffusion, dephosphorization silex glass, form N-type silicon layer 3 on P type silicon substrate 1 surface, P type silicon substrate 1 forms P-N knot 2 with the interface of N-type silicon layer 3, and its sheet resistance is 50 Ω/.Then at N-type silicon layer 3 positive photoresist preparation and the masks 10 that front electrode 6 has complete opposite pattern of adopting, obtain as shown in Figure 5 structure.The silicon chip that the surface is had mask 10 is put into the magnetron sputtering stove, initial depression 6 * 10
-4Pa, 200 ℃ of working temperatures, operating air pressure is 0.1Pa, and working gas is the argon gas of purity 〉=99.999%, adopts the Ti target, and target-substrate distance 110mm, target power output are 200W, time 1min, forming thickness is the metal Ti layer 7 of 0.04um, obtains structure shown in Figure 6.Then remove mask 10, and the silicon chip that the surface is coated with the metal Ti layer 7 identical with front electrode 6 patterns is put into vacuum heat treatment furnace, 800 ℃ of lower heat treatment 10s, forming thickness is the Ti-Si intermetallic compounds layer 5 of 0.08 μ m, obtains structure shown in Figure 3.Silicon chip after the heat treatment is carried out pecvd process, and deposit thickness is the antireflection layer 4 of 80nm, obtains structure shown in Figure 4.Last back up aluminium back surface field 8 and backplate 9 at P type silicon substrate 1, at antireflection layer 4 surface printing front electrodes 6, then whole the immigration in the meshbeltfurnace carried out sintering processes, the sintering maximum temperature is 700 ℃, sintering time is 8s under the maximum temperature, obtain having the crystal silicon solar batteries of structure shown in Figure 1, be designated as S4.
Comparative Examples
Adopting conventional operation is that the crystal-silicon battery slice of 50 Ω/ directly carries out pecvd process to the sheet resistance of making herbs into wool, diffusion, dephosphorization silex glass, forms antireflection layer.Then in back up aluminium back surface field and the backplate of silicon chip, then positive printing front electrode carries out sintering processes in the whole immigration meshbeltfurnace, the sintering maximum temperature is 780 ℃, sintering time is 3s under the maximum temperature, obtains the crystal silicon solar batteries of this Comparative Examples, is designated as DS1.
Performance test:
The HSC1 single flash operation solar cell separator of He Shuan Science and Technology Ltd. of employing Shanghai Communications University is tested the electrical property of each battery sample S1-S4 and DS1, record electricity conversion, fill factor, curve factor and the series resistance of each battery, adopt TLM pattern method of testing to test the contact resistance of each battery sample S1-S4 and DS1.
Test result is as shown in table 1.
Table 1
Test result by upper table 1 can find out, the electricity conversion of crystal silicon solar batteries sample S1-S4 provided by the invention is up to more than 16.9%, and fill factor, curve factor is up to 78.2, apparently higher than the battery sample DS1 of Comparative Examples; And the series resistance of S1-S4 is lower than 0.28 Ω cm
2, contact resistance is lower than 0.25m Ω cm
2, be starkly lower than the battery sample DS1 of Comparative Examples, illustrate and adopt crystal silicon solar batteries provided by the invention to have good electricity conversion.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. crystal silicon solar batteries, it is characterized in that, described crystal silicon solar batteries comprises backplate, aluminium back surface field, P type silicon substrate, N-type silicon layer, Ti-Si intermetallic compounds layer, antireflection layer and front electrode from bottom to up successively, be formed with the P-N knot between described P type silicon substrate and the N-type silicon layer, front electrode penetrates described antireflection layer and contacts with the Ti-Si intermetallic compounds layer.
2. crystal silicon solar batteries according to claim 1 is characterized in that, the pattern of described Ti-Si intermetallic compounds layer overlaps with the pattern of front electrode in the normal direction of described crystal silicon solar batteries.
3. crystal silicon solar batteries according to claim 1 is characterized in that, the thickness of Ti-Si intermetallic compounds layer is 0.01-0.08 μ m.
4. crystal silicon solar batteries according to claim 1 is characterized in that, described antireflection layer is silicon nitride layer, and the thickness of antireflection layer is 70-90nm.
5. the preparation method of crystal silicon solar batteries claimed in claim 1 may further comprise the steps:
A, P type surface of silicon is carried out making herbs into wool, diffusion and dephosphorization silex glass, form the N-type silicon layer in P type surface of silicon, the interface of P type silicon substrate and N-type silicon layer forms P-N and ties;
B, form the metal Ti layer in the N-type silicon surface, then heat-treat, form the Ti-Si intermetallic compounds layer in the N-type silicon surface;
C, carry out plasma enhanced chemical vapor deposition on Ti-Si intermetallic compounds layer surface, form antireflection layer;
D, at antireflection layer surface printing front electrode, in P type surface of silicon printing aluminium back surface field and backplate, front electrode penetrates described antireflection layer and contacts with the Ti-Si intermetallic compounds layer behind the sintering.
6. preparation method according to claim 5 is characterized in that, the method that forms the metal Ti layer in the N-type silicon surface is physical vapour deposition (PVD), printing, spraying or inkjet printing.
7. preparation method according to claim 5 is characterized in that, also comprises: before the N-type silicon surface forms the metal Ti layer, adopt photoresist to prepare the step of mask in the N-type silicon surface.
8. preparation method according to claim 5 is characterized in that, heat treated temperature is 650-850 ℃, and the time is 3-12s.
9. preparation method according to claim 5 is characterized in that, the printing zone of front electrode overlaps in the normal direction of described front electrode with the pattern of Ti-Si intermetallic compounds layer.
10. preparation method according to claim 5 is characterized in that, the maximum temperature of sintering is 700-780 ℃, and the sintering time under the maximum temperature is 3-8s.
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| CN104952944A (en) * | 2014-03-31 | 2015-09-30 | 比亚迪股份有限公司 | Solar cell sheet and preparation method thereof and solar cell module with the cell sheet |
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