CN102386249B - High-efficiency crystalline silicon cell with next-generation structure and manufacturing method for high-efficiency crystalline silicon cell - Google Patents
High-efficiency crystalline silicon cell with next-generation structure and manufacturing method for high-efficiency crystalline silicon cell Download PDFInfo
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- CN102386249B CN102386249B CN2011103380244A CN201110338024A CN102386249B CN 102386249 B CN102386249 B CN 102386249B CN 2011103380244 A CN2011103380244 A CN 2011103380244A CN 201110338024 A CN201110338024 A CN 201110338024A CN 102386249 B CN102386249 B CN 102386249B
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Abstract
The invention discloses a high-efficiency crystalline silicon cell with a next-generation structure and a manufacturing method for the high-efficiency crystalline silicon cell, and belongs to the field of crystalline silicon solar cells. The method comprises: a silicon oxide passivation step of forming a layer of silicon oxide film on the phosphorus-doped surface of a P-type silicon chip; an aluminum oxide passivation step of forming a layer of aluminum oxide film on the undoped surface of the P-type silicon chip; a metal wrap through (MWT) technology step of leading the anode of the cell to a back surface by adopting laser boring; and a new grid line formation step of adopting electroplating and sputtering. By the cell and the method, MWT is effectively combined, and the passivation of double film layers on a front surface and the passivation of aluminum oxide on the back surface are realized; due to the adoption of novel cell formation schemes such as electroplating, sputtering and the like, dependence on screen printing silver paste is overcome, and simultaneously resistance produced by electrodes is decreased; and the efficiency of a P-type monocrystalline cell can be improved to over 20 percent, and the efficiency of a P-type polycrystalline cell can be improved to over 18 percent.
Description
Technical field
The present invention relates to a kind of structure high efficiency crystal silicon cell of future generation and manufacture method, belong to the crystal silicon solar energy battery field.
Background technology
Current, crystal silicon solar energy battery is owing to be limited by optical loss, electron hole compound, and the relevant factors such as various ohmic losses of electrode, and also there is very big room for promotion in efficient.
In order to improve the photoelectric conversion efficiency of battery sheet, it is necessary absorbing and changing more photon.Reducing the surface reflection and increasing light-receiving area is to increase the photonic absorption important channel.Reducing the surface reflection realizes by surface wool manufacturing and plating antireflective film usually.Yet surface electrode is still restricting the battery sheet to the absorption of light to reflection of light.Refinement surface electrode and the new electrode structure of employing become popular research topic.The electrode structure of MWT (Metal Wrap through) has significantly reduced the electrode pair reflection of light, and has realized industrialization in part company.The MWT technology can also be optimized the figure of front electrode or graphical customizations except reducing the shading area, is all having a clear superiority in aspect electrical property optimization and the flexible reply customer demand.
Yet current MWT technology is not still broken away from the dependence to expensive silk screen printing silver slurry, the various resistance that brought by the silk screen printing slurry, and the problem of printing own is still restricting the raising of battery sheet efficient largely.Adopt to electroplate, sputter etc. have been proved to be in semicon industry and laboratory and can have formed good electrode and contact, and can adopt non-precious metals such as nickel, copper, replacement or significantly reduce the use amount of noble metals such as silver.
Along with the raising (silicon purity improves, dislocation density reduction etc.) of solar power silicon tablet quality, and the reduction of phosphorus doping density, the surface recombination of electric charge is seeming more and more important aspect the restriction battery sheet efficient.Silica is better than by the silicon nitride of wide-scale adoption the inactivating performance of silicon chip, and silica adds the silicon nitride duplicature becomes comparatively desirable improvement project.On the other hand, the back side is adopted aluminium oxide passivation to be proved to be and can significantly be promoted battery sheet efficient.
Summary of the invention
The invention provides a kind of structure high efficiency crystal silicon cell of future generation and manufacture method,
In the current crystal silicon solar energy battery technology, substantially all exist surface passivation effect not good, the shading area that the front gate line battery causes is big, the electrode contact resistance is big, relies on expensive shortcomings such as silk-screen slurry, and the present invention adopts front silica passivation, back side aluminium oxide passivation, adopt MWT to form electrode processing method in conjunction with sputtering method, significantly improve above-mentioned defective, significantly promote battery sheet efficient.Adopt base metal such as ambrose alloy to form electrode simultaneously, significantly reduce even replace the use of silver.
The object of the present invention is to provide a kind of high-efficiency crystal silicon solar cell, a kind of structure high efficiency crystal silicon cell of future generation forms silica and silicon nitride duplicature at battery front side, and the front is formed good passivation and reduces the surface reflection; Alumina layer passivation P type substrate and local aluminum back surface field are adopted in the back side, form effective passivating back; The aperture that runs through silicon chip is filled by slurry, finally forms electrode; Overleaf, the electrode of drawing from aperture forms isolation with mask method or with laser, avoids short circuit; Between the substrate of P type and the local back of the body field pellumina is arranged; Between front silica and the substrate of P type n type layer is arranged.
The present invention also aims to provide a kind of manufacture method of high-efficiency crystal silicon solar cell, increase silica and aluminium oxide passivation step on the common process basis, the MWT technical step, new grid line forms step; Contain following steps;
The silica passivation step refers to form one deck silicon oxide film at the phosphorus doping face of P type silicon chip;
The aluminium oxide passivation step refers to form one deck pellumina at the non-doping face of P type silicon chip;
MWT (Metal Wrap Through) technical step refers to adopt laser drilling, the battery sheet front electrode guiding back side;
New grid line forms step, refers to adopt electroplate sputter step.
New grid line forms employing equipment and realizes.Broken away from the dependence to high-precision silk screen printing and silk screen printing slurry.Reduced simultaneously because the high electrical resistance loss that the silk screen printing slurry causes.
Adopt this method, can effectively overcome the deficiency in the existing technology, as break away from the dependence to the silk screen printing slurry, reduce resistance, increase light-receiving area etc.
The present invention effectively combines MWT, front duplicature passivation, back side aluminium oxide passivation; And adopted new battery to form scheme, as electroplating, sputter etc. have overcome the dependence to silk screen printing silver slurry, have reduced the resistance that is produced by electrode simultaneously.Can make more than the P type single crystal battery sheet improved efficiency to 20%, more than the P type polycrystalline battery sheet improved efficiency to 18%.
Description of drawings
When considered in conjunction with the accompanying drawings, by the reference following detailed, can more completely understand the present invention better and learn wherein many attendant advantages easily, but accompanying drawing described herein is used to provide further understanding of the present invention, constitute a part of the present invention, illustrative examples of the present invention and explanation thereof are used for explaining the present invention, do not constitute to improper restriction of the present invention, wherein:
Fig. 1 is that expression is as the structural representation of the embodiment of the invention;
Fig. 2 is method flow diagram of the present invention.
Silicon nitride film 1; Silicon oxide film 2; N type layer 3; P-type base 4; Pellumina 5; Local back of the body field 6; Laser isolates 7; Electrode 8.
Embodiment
Describe referring to figs. 1 through the embodiments of the invention of Fig. 2.
As shown in Figure 1, form silica 2 and silicon nitride duplicature 1 at battery front side, the front is formed good passivation and reduces the surface reflection; Alumina layer 5 passivation P type substrates 4 and the local back of the body 6 structure are adopted in the back side, form effective passivating back; The aperture that runs through silicon chip is filled by slurry, finally forms electrode 8; Overleaf, with mask method or with laser formation isolation 7 electrode 8 and other parts of back of the body surface are separated around the electrode 8, avoid short circuit; Between P type substrate 4 and the local back of the body field 6 pellumina 5 is arranged; Between silica 2 and the P type substrate 4 n type layer 3 is arranged.
The 156mm*156mm polysilicon chip surface of battery have 4*4 totally 16 apertures be 300 microns circular hole, run through silicon chip.
Or: the 125mm*125mm monocrystalline silicon sheet surface of battery have 3*3 totally 9 apertures be 250 microns circular hole, run through silicon chip.
Adopt this method, can effectively overcome the deficiency in the existing technology, as break away from the dependence to the silk screen printing slurry, reduce resistance, increase light-receiving area etc.
For achieving the above object, increase silica and aluminium oxide passivation on the common process basis, the MWT technical method, new grid line forms technical method.
Silica passivation of the present invention refers to form one deck silicon oxide film at the phosphorus doping face of P type silicon chip.The front table is formed good passivation.
Aluminium oxide passivation of the present invention refers to form one deck pellumina at the non-doping face of P type silicon chip.To being formed good passivation by the surface.
MWT of the present invention (Metal Wrap Through) technology refers to adopt laser drilling, the technology at the battery sheet front electrode guiding back side.Reduce the reflection that battery causes, increase light-receiving area.
New grid line formation technology of the present invention refers to adopt and electroplates, and sputter etc. are different from the technology of silk screen printing.Employing equipment is realized.Broken away from the dependence to high-precision silk screen printing and silk screen printing slurry.Reduced simultaneously because the high electrical resistance loss that the silk screen printing slurry causes.
Embodiment 1: as shown in Figure 1, 2;
A kind of manufacture method of high-efficiency crystal silicon solar cell increases silica and aluminium oxide passivation step on the common process basis, the MWT technical step, and new grid line forms step; Contain following steps;
The laser drilling step forms 4*4 totally 16 circular holes that the aperture is about 300 microns on 156mm*156mm polysilicon chip surface with laser, runs through silicon chip;
The making herbs into wool step adopts HNO3/HF/H2O system (nitric acid/hydrofluoric acid/aqueous systems), and nitric acid is that electronics is pure, mass concentration about 69%; Hydrofluoric acid is that electronics is pure, mass concentration about 49%; Water is deionized water, and resistance value is about 18 megaohms centimetre; Three's volume ratio is about 6.5: 1: 3; Temperature 8-11 ℃.The cleaning silicon chip surface, and form matte;
Diffusing step adopts POCl3 (phosphorus oxychloride) silicon chip to be mixed in high temperature dispersing furnace for the phosphorus source, forms emitter, and emitter resistance is 65-90 ohm;
Wet etching step is removed the silicon chip surface phosphorosilicate glass that diffusion produces, and removes the pn knot at the silicon chip back side simultaneously;
Adopt method plating silica and the silicon nitride duplicature of PECVD (plasma reinforced chemical vapour deposition);
Adopt mask corrosion method or laser step, form the figure of the front and back of silicon chip;
Adopt sputter nickel, copper, silver forms electrode at silicon chip, and the field is carried on the back in the part of adopting sputtered aluminum to be formed on the silicon chip;
Heat treatment step is handled by insulation at a certain temperature, makes metal and silicon chip form excellent contact.
Embodiment 2: as shown in Figure 1, 2;
A kind of manufacture method of high-efficiency crystal silicon solar cell increases silica and aluminium oxide passivation step on the common process basis, the MWT technical step, and new grid line forms step; Contain following steps;
The laser drilling step forms 4*4 totally 16 circular holes that the aperture is about 250 microns on 156mm*156mm list/polysilicon chip surface with laser, runs through silicon chip;
Or: the laser drilling step, form 3*3 totally 9 circular holes that the aperture is about 250 microns on 125mm*125mm list/polysilicon chip surface with laser, run through silicon chip;
Making herbs into wool step, polycrystalline adopt HNO3/HF/H2O (nitric acid/hydrofluoric acid/water) system cleaning silicon chip surface, and form matte; Monocrystalline adopts NaOH/IPA/H2O (NaOH/isopropanol) system cleaning silicon chip surface, and forms matte;
Diffusing step adopts POCl3 (phosphorus oxychloride) silicon chip to be mixed in high temperature dispersing furnace for the phosphorus source, forms emitter;
Wet etching step is removed the silicon chip surface phosphorosilicate glass that diffusion produces, and removes the pn knot at the silicon chip back side simultaneously;
Adopt method plating silica and the silicon nitride duplicature of PECVD (plasma reinforced chemical vapour deposition);
Adopt mask corrosion method or laser step, form the figure of the front and back of silicon chip;
Adopt sputter nickel, copper, silver forms electrode at silicon chip, and the field is carried on the back in the part of adopting sputtered aluminum to be formed on the silicon chip;
Heat treatment step is handled by insulation at a certain temperature, makes metal and silicon chip form excellent contact.
Obviously, the many modifications and variations done based on aim of the present invention of those skilled in the art belong to protection scope of the present invention.
As mentioned above, embodiments of the invention are explained, but as long as not breaking away from inventive point of the present invention and effect in fact can have a lot of distortion, this will be readily apparent to persons skilled in the art.Therefore, such variation also all is included within protection scope of the present invention.
Claims (2)
1. a structure high efficiency crystal silicon cell of future generation is characterized in that, forms silica and silicon nitride duplicature at battery front side, and the front is formed good passivation and reduces the surface reflection; Aluminium oxide or silicon oxide layer passivation P type substrate and local aluminum back surface field are adopted in the back side, form effective passivating back; The aperture that runs through silicon chip is filled by slurry, finally forms electrode; Overleaf, the electrode of drawing from aperture separates its other parts with the surface with mask method or with laser, avoids short circuit; Between the substrate of P type and the local back of the body field pellumina or silicon oxide film are arranged; Between front silica and the substrate of P type n type layer is arranged; As a kind of preferred, the 156mm*156mm polysilicon chip surface of battery have 4*4 totally 16 apertures be 300 microns circular hole, run through silicon chip;
Or the 125mm*125mm monocrystalline silicon sheet surface of battery have 3*3 totally 9 apertures be 250 microns circular hole, run through silicon chip.
2. the manufacture method of a high-efficiency crystal silicon solar cell is characterized in that, it is characterized in that, contains following steps:
1) laser drilling step forms 4*4 totally 16 circular holes that the aperture is about 300 microns on 156mm*156mm polysilicon chip surface with laser;
Or form 3*3 totally 9 circular holes that the aperture is about 250 microns at the 125mm*125mm monocrystalline silicon sheet surface with laser, run through silicon chip;
2) making herbs into wool step adopts HNO3/HF/H2O system (nitric acid/hydrofluoric acid/aqueous systems), and nitric acid is that electronics is pure, mass concentration about 69%; Hydrofluoric acid is that electronics is pure, mass concentration about 49%; Water is deionized water, and resistance value is about 18 megaohms centimetre; Three's volume ratio is about 6.5:1:3; Temperature 8-11 ℃, the cleaning silicon chip surface, and form matte;
3) diffusing step adopts the POCl3(phosphorus oxychloride) silicon chip is mixed in high temperature dispersing furnace for the phosphorus source, form emitter, emitter resistance is 65-90 ohm;
4) wet etching step is removed the silicon chip surface phosphorosilicate glass that diffusion produces, and removes the pn knot at the silicon chip back side simultaneously;
5) employing PECVD(plasma reinforced chemical vapour deposition) method plating silica and silicon nitride duplicature;
6) adopt mask corrosion method or laser step, form the figure of the front and back of silicon chip;
7) adopt sputter nickel, copper, silver forms electrode at silicon chip, and the field is carried on the back in the part of adopting sputtered aluminum to be formed on the silicon chip;
8) heat treatment step is handled by insulation at a certain temperature, makes metal and silicon chip form excellent contact;
As a kind of preferred, increase silica, aluminium oxide passivation step, MWT technical step and new grid line on the common process basis and form step, be specially:
The silica passivation step refers to form one deck silicon oxide film at the phosphorus doping face of P type silicon chip, thereby the front table is formed good passivation;
The aluminium oxide passivation step refers to form one deck pellumina at the non-doping face of P type silicon chip, thereby to being formed good passivation by the surface;
MWT (Metal Wrap Through) technical step refers to adopt laser drilling, the battery sheet front electrode guiding back side, thereby reduces the reflection that battery causes, increases light-receiving area;
New grid line forms step, refers to electroplate, and sputter step, new grid line forms employing equipment and realizes, has broken away from the dependence to high-precision silk screen printing and silk screen printing slurry, has reduced simultaneously because the high electrical resistance loss that the silk screen printing slurry causes.
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| CN102629641B (en) * | 2012-04-13 | 2014-08-06 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of back contact silicon solar cell |
| CN102623574A (en) * | 2012-04-16 | 2012-08-01 | 英利能源（中国）有限公司 | MWT structure solar cell module and manufacturing method thereof |
| CN102683498A (en) * | 2012-05-30 | 2012-09-19 | 韩华新能源（启东）有限公司 | Manufacture method of segmented metal wrap through solar cell pack |
| FI20125987A (en) * | 2012-09-24 | 2014-03-25 | Optitune Oy | Method of passivating a silicon substrate for use in a photovoltaic device |
| CN103117329B (en) * | 2013-02-17 | 2016-11-23 | 史金超 | Hetero-junctions MWT battery and preparation method thereof, slide glass boat |
| CN103618021A (en) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | MWT battery manufacturing method |
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| CN104201243B (en) * | 2014-09-05 | 2016-06-29 | 浙江晶科能源有限公司 | A kind of method for the internal filled therewith of MWT battery hole |
| CN104538502A (en) * | 2015-01-16 | 2015-04-22 | 浙江晶科能源有限公司 | Crystalline silicon MWT solar battery manufacturing method |
| CN106972067A (en) * | 2017-05-09 | 2017-07-21 | 无锡赛晶太阳能有限公司 | A kind of polysilicon solar cell |
| CN109713053A (en) * | 2018-12-27 | 2019-05-03 | 江苏日托光伏科技股份有限公司 | A kind of preparation method of MWT solar battery |
| CN113921659B (en) * | 2021-12-10 | 2022-06-28 | 南京日托光伏新能源有限公司 | Method for improving MWT hole hiding |
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