CN103014875A - Method for treating synthetic sapphire wafer - Google Patents
Method for treating synthetic sapphire wafer Download PDFInfo
- Publication number
- CN103014875A CN103014875A CN2012105030201A CN201210503020A CN103014875A CN 103014875 A CN103014875 A CN 103014875A CN 2012105030201 A CN2012105030201 A CN 2012105030201A CN 201210503020 A CN201210503020 A CN 201210503020A CN 103014875 A CN103014875 A CN 103014875A
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- Prior art keywords
- pure
- wafer
- water
- sapphire
- seconds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 22
- 239000010980 sapphire Substances 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 16
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000008399 tap water Substances 0.000 claims abstract description 10
- 235000020679 tap water Nutrition 0.000 claims abstract description 10
- 238000005406 washing Methods 0.000 claims abstract description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- 239000006210 lotion Substances 0.000 claims description 5
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 4
- 239000003921 oil Substances 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- 239000008213 purified water Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 238000003466 welding Methods 0.000 abstract description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 3
- 239000002253 acid Substances 0.000 abstract description 2
- 150000007513 acids Chemical class 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract description 2
- 150000001298 alcohols Chemical class 0.000 abstract 1
- 238000000861 blow drying Methods 0.000 abstract 1
- 238000005219 brazing Methods 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 239000003344 environmental pollutant Substances 0.000 abstract 1
- 235000019441 ethanol Nutrition 0.000 abstract 1
- 230000000887 hydrating effect Effects 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 231100000719 pollutant Toxicity 0.000 abstract 1
- 238000002791 soaking Methods 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000010437 gem Substances 0.000 description 2
- 229910001751 gemstone Inorganic materials 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910001200 Ferrotitanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Abstract
The invention provides a method for treating a synthetic sapphire wafer and relates to a sapphire cleaning treatment process which comprises the following steps of: dissolving chemically pure potassium dichromate in pure water, then dropwise adding 644-736 chemically pure concentrated sulfuric acid, and cooling until the temperature reaches the room temperature; soaking the sapphire wafer into potassium dichromate washing liquor for 5-10 seconds and rinsing the same thoroughly with tap water; preparing corrosive liquid by using analytically pure hydrofluoric acid and pure water, corroding the sapphire wafer for 3-5 seconds at the room temperature and then rinsing the wafer throughly with tap water; hydrating the wafer analytically pure absolute ethyl alcohol and then blow-drying the wafer by using hot air. The method provided by the invention is capable of oxidizing either a plurality of metal pollutants on the surface or organic greases so that the greases are converted into alcohols or acids soluble in water; as a result, the surface is cleaned quickly. The microscopic roughness is improved without changing the appearance and various performance indexes so that the capillary action can be enhanced during brazing and the free-running property of the solder is improved; as a result, high-quality welding can be realized.
Description
Technical field
The present invention relates to sapphire clean technique, particularly a kind of for the treatment process of the synthetic sapphire thin slice of window frame of metal soldering.
Background technology
Jewel is the general designation of alpha aluminium oxide single crystal.Pure alumina monocrystalline (alumina content is 99.98-99.992) is water white, claims white stone.When containing micro-cobalt oxide and ferric oxide, be light blue, claim sapphire.Natural gemstone seldom, volume is also less, extensive application be hard mass.Sapphire has the various advantages of pure alumina porcelain, its mechanical property, optical property, thermal characteristics, electrical property and high pressure resistant, anti-electronics bombardment performance are all very excellent, its thermal conductivity and titanium and stainless steel are suitable, in the vacuum electron device field, be mainly used in the output window manufacturing of platinotron.
Summary of the invention
Technical problem to be solved by this invention provides a kind ofly carries out the treatment process that pretreated a kind of synthetic sapphire thin slice is carried out in the resistance to air loss welding for sapphire and window frame of metal, make every effort to reach thorough purification surface, improve nano and micro relief, strengthen wicking action, improve the purpose of scolder free-running property.
The present invention adopts following technique means to solve its technical problem:
A kind for the treatment of process of synthetic sapphire thin slice is characterized in that finishing by following steps:
First step purifies the surface:
20 ~ 30 weight part chemical pure potassium bichromate are dissolved in 40 ~ 50 parts by weight of purified water, then 644 ~ 736 weight part chemical pure vitriol oils are slowly added wherein, the limit edged stirs, and is cooled to subsequently room temperature; Sapphire sheet was immersed in the potassium bichromate washing lotion 5 ~ 10 seconds, then use tap water to rinse well;
Second step, the microcosmic corrosion:
Use analytical pure hydrofluoric acid and pure water dose volume than the corrosive fluid as 1:1, concentration is 20% ~ 22%; Room temperature corrosion 3 ~ 5 seconds, then use tap water to rinse well;
Third step dehydrates:
Use analytically pure dehydrated alcohol to dewater 0.5 ~ 1 minute, use at last hot blast drying.
The present invention at first adopts the mixed liquid dipping of potassium bichromate and sulfuric acid, and it not only can oxidized surface various metals pollutent, but also can the organic grease of oxidation, grease is become be dissolved in alcohol or the acids of water, rapidly the clean surface.Use 20% ~ 22% hydrofluoric acid to carry out the etch of short period of time after the washing, can thoroughly clean the various booties on its surface, particularly the abrasive particle during attrition process etc.Simultaneously in the situation that do not change its outward appearance and property indices, improve nano and micro relief, strengthen wicking action when being beneficial to soldering, improve the free-running property of scolder, obtain high-quality welding.Sapphire sheet after art breading of the present invention can realize firmly resistance to air loss welding with window frame of metal, and welding quality stable is reliable.
Embodiment
The process implementing process
Embodiment 1
1, purify the surface:
100 gram chemical pure potassium bichromate are dissolved in the 200 gram pure water, then the 3220 gram chemical pure vitriol oils are slowly added wherein, the limit edged stirs, and is cooled to subsequently room temperature; Sapphire sheet was immersed in the potassium bichromate washing lotion 5 seconds, then use tap water to rinse well;
2, microcosmic corrosion:
Working concentration is 20% 1000 milliliters in analytical pure hydrofluoric acid and 1000 milliliters of preparations of pure water corrosive fluid, room temperature corrosion 3 seconds, then uses tap water to rinse well;
3, dehydrate:
Use analytically pure dehydrated alcohol to dewater 0.5 minute, use at last hot blast drying.
Embodiment 2
1, purify the surface:
150 gram chemical pure potassium bichromate are dissolved in the 250 gram pure water, then the 3680 gram chemical pure vitriol oils are slowly added wherein, the limit edged stirs, and is cooled to subsequently room temperature; Sapphire sheet was immersed in the potassium bichromate washing lotion 10 seconds, then use tap water to rinse well;
2, microcosmic corrosion:
Using commercially available concentration is 22% analytical pure hydrofluoric acid, 2260 grams, and pure water 2260 grams room temperature corrosion 5 seconds, then use tap water to rinse well;
3, dehydrate:
Use analytically pure dehydrated alcohol to dewater 1 minute, use at last hot blast drying.
Claims (3)
1. the treatment process of a synthetic sapphire thin slice is characterized in that finishing by following steps:
First step purifies the surface:
Sapphire sheet immersed soaked in the potassium bichromate washing lotion 5～10 seconds, then use tap water to rinse well;
Second step, the microcosmic corrosion:
At room temperature the sapphire sheet with purifying treatment places corrosive fluid to corrode 3～5 seconds, then uses tap water to rinse well;
In the 3rd step, dehydrate:
Use analytically pure dehydrated alcohol to dewater 0.5～1 minute, use at last hot blast drying.
2. the treatment process of a kind of synthetic sapphire thin slice according to claim 1, it is characterized in that described potassium bichromate washing lotion is that 20～30 weight part chemical pure potassium bichromate are dissolved in 40～50 parts by weight of purified water, then 644～736 weight part chemical pure vitriol oils are slowly added wherein, the limit edged stirs, and is cooled to subsequently room temperature.
3. the treatment process of a kind of synthetic sapphire thin slice according to claim 1 is characterized in that described corrosive fluid is is that 1:1 is formulated by volume for 20%～22% analytical pure hydrofluoric acid and pure water with concentration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210503020.1A CN103014875B (en) | 2012-11-30 | 2012-11-30 | A kind for the treatment of process of synthetic sapphire wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210503020.1A CN103014875B (en) | 2012-11-30 | 2012-11-30 | A kind for the treatment of process of synthetic sapphire wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103014875A true CN103014875A (en) | 2013-04-03 |
| CN103014875B CN103014875B (en) | 2015-10-21 |
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| CN201210503020.1A Active CN103014875B (en) | 2012-11-30 | 2012-11-30 | A kind for the treatment of process of synthetic sapphire wafer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103949742A (en) * | 2014-04-25 | 2014-07-30 | 甘肃虹光电子有限责任公司 | Method for actively sealing sapphire sheet and metal |
| CN104178816A (en) * | 2014-08-08 | 2014-12-03 | 蓝思科技股份有限公司 | Sapphire wafer de-plating process |
| CN104651948A (en) * | 2015-01-12 | 2015-05-27 | 上海应用技术学院 | Method for etching c-plane sapphire |
| CN105371594A (en) * | 2015-11-18 | 2016-03-02 | 无锡科诺达电子有限公司 | Sapphire drying device |
| CN111041423A (en) * | 2019-12-10 | 2020-04-21 | 太原理工大学 | Method for improving welding performance of sapphire by designing surface structure and component gradient layer |
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2012
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103949742A (en) * | 2014-04-25 | 2014-07-30 | 甘肃虹光电子有限责任公司 | Method for actively sealing sapphire sheet and metal |
| CN103949742B (en) * | 2014-04-25 | 2016-02-10 | 甘肃虹光电子有限责任公司 | A kind of sapphire sheet and metal active method for sealing |
| CN104178816A (en) * | 2014-08-08 | 2014-12-03 | 蓝思科技股份有限公司 | Sapphire wafer de-plating process |
| CN104178816B (en) * | 2014-08-08 | 2016-09-07 | 蓝思科技股份有限公司 | A kind of sapphire wafer takes off depositing process |
| CN104651948A (en) * | 2015-01-12 | 2015-05-27 | 上海应用技术学院 | Method for etching c-plane sapphire |
| CN104651948B (en) * | 2015-01-12 | 2017-05-31 | 上海应用技术学院 | A kind of lithographic method of c surface sapphires |
| CN105371594A (en) * | 2015-11-18 | 2016-03-02 | 无锡科诺达电子有限公司 | Sapphire drying device |
| CN111041423A (en) * | 2019-12-10 | 2020-04-21 | 太原理工大学 | Method for improving welding performance of sapphire by designing surface structure and component gradient layer |
| CN111041423B (en) * | 2019-12-10 | 2021-11-19 | 太原理工大学 | Method for improving welding performance of sapphire by designing surface structure and component gradient layer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103014875B (en) | 2015-10-21 |
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Denomination of invention: A Processing Method for Artificial Sapphire Thin Slices Effective date of registration: 20230913 Granted publication date: 20151021 Pledgee: Bank of China Limited Pingliang Branch Pledgor: GANSU HONGGUANG ELECTRONIC CO.,LTD. Registration number: Y2023980056732 |