CN102931956A - Design implementing method capable of simultaneously improving efficiencies and reliability of gallium nitride (GaN) power tube - Google Patents
Design implementing method capable of simultaneously improving efficiencies and reliability of gallium nitride (GaN) power tube Download PDFInfo
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- CN102931956A CN102931956A CN201210438919XA CN201210438919A CN102931956A CN 102931956 A CN102931956 A CN 102931956A CN 201210438919X A CN201210438919X A CN 201210438919XA CN 201210438919 A CN201210438919 A CN 201210438919A CN 102931956 A CN102931956 A CN 102931956A
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Abstract
The invention belongs to the technical field of analog circuits and relates to a design implementing method capable of simultaneously improving efficiencies and reliability of a gallium nitride (GaN) power tube. According to the design implementing method, by means of a negative electricity protection circuit, sequential control of a power supply of the power tube is achieved, and the reliability of the power tube is improved; and simultaneously, pulse modulation is performed to drain positive electricity so that quiescent current is cut off when the power tube doesn't work, and the efficiencies of the power tube are improved.
Description
Technical field
The present invention relates to a kind of design implementation method that improves simultaneously GaN power tube efficient and reliability.The method realizes the sequencing control of power tube power supply by the negative electricity protective circuit, improve the reliability of power tube; Turn-off quiescent current when drain electrode positive electricity is carried out pulse modulation and realizes not working simultaneously, improve the efficient of power tube.The method belongs to the Analogical Circuit Technique field.
Background technology
The equipment such as modern Connectors for Active Phased Array Radar are had higher requirement to the performance of emitting module, are embodied in: higher power output, wider working band, higher component efficiency, less volume and lighter weight, stronger capability of resistance to radiation.Power tube for realizing the performance requirement of assembly, satisfies the technique and tactics index of system as the important component part of emitting module, also need to be in the higher level of many-sided arrival such as power output, working band, power-efficient, volume weight.The GaN material is as the semi-conductive main material of three generations, with one, two generation semi-conducting material compare, have that breakdown field strength is high, the unit are power density is high, electron mobility is high, pyroconductivity is high, the characteristics such as Heat stability is good, capability of resistance to radiation are strong, the demand for development that can adapt to the Connectors for Active Phased Array Radar system is principal mode and the developing direction of following radar system power device applications.
The GaN power tube has stricter requirement to power supply timing, must supply drain electrode positive electricity for the grid negative electricity first again, otherwise will cause drain-source to puncture, and damages power tube; The GaN power tube generally is applied to category-A, class ab ammplifier, power up the rear quiescent current that still exists during without pumping signal, the quiescent current of high power valve can reach hundreds of milliamperes sometimes, consider simultaneously GaN power tube drain voltage higher (be generally 28V and more than), so quiescent dissipation is very large, for improving power tube efficient, need to supply modulation in the power tube drain electrode.
Summary of the invention
The object of the present invention is to provide a kind of control of GaN power tube power supply timing and pulse modulated circuit design implementation method of drain electrode power supply of realizing simultaneously.
The present invention is that the technical solution that its technical problem of solution adopts is: detect GaN power tube grid negative electricity, utilize the break-make that has the non-grid negative electricity to control the speed-sensitive switch triode, thereby realize the power supply timing control to power tube.Gate source voltage by the control high-power switch tube, realization is to the break-make control of switching tube, finish the pulse modulation of GaN power tube drain electrode positive electricity, reaching power tube grid negative electricity loads drain electrode positive electricity is provided when in the normal situation pumping signal being arranged, turn-off drain electrode positive electricity during without pumping signal, improved efficient and the reliability of GaN power tube.
The present invention compared with prior art; its remarkable advantage is: can realize simultaneously that the control of GaN power tube power supply timing and drain electrode are for modulation; the switching response time is short; negative electricity protection speed is fast; the impulse waveform time-delay characteristics are good; circuit form is simple, can be used for the GaN power circuit that any drain electrode supply power voltage is lower than 60V.
Description of drawings
Fig. 1 is a kind of schematic diagram that improves simultaneously GaN power tube efficient and reliability.
Embodiment
Circuit design of the present invention as shown in Figure 1.
Among the figure, control port input power pipe transmitted pulse envelope signal, V1 is the speed-sensitive switch triode, switching time is less than 20ns; V2 is the field effect transistor switch pipe, is no more than 20ns switching time, and maximum drain-source breakdown voltage is 60V, can be used for the pulse modulation of most of GaN power tube drain electrode positive electricity; V3 is high-power switch tube, select according to used GaN power tube; A1 is the GaN power tube; D1 is the 4.7V voltage stabilizing didoe.
During without negative electricity, not conducting of voltage stabilizing didoe, no matter control signal is in any level, all not conductings of high-power switch tube, GaN power tube drain electrode no-voltage is realized the negative electricity defencive function; When negative electricity is arranged, the voltage stabilizing didoe conducting, high-power switch tube realizes that with level height conducting or the cut-off of control port the drain electrode of GaN power tube is for the modulation function.
Claims (1)
1. a design implementation method that improves simultaneously GaN power tube efficient and reliability is characterized by: realize the sequencing control of power tube power supply by the negative electricity protective circuit, improve the reliability of power tube; Turn-off quiescent current when drain electrode positive electricity is carried out pulse modulation and realizes not working simultaneously, improve the efficient of power tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210438919XA CN102931956A (en) | 2012-11-05 | 2012-11-05 | Design implementing method capable of simultaneously improving efficiencies and reliability of gallium nitride (GaN) power tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210438919XA CN102931956A (en) | 2012-11-05 | 2012-11-05 | Design implementing method capable of simultaneously improving efficiencies and reliability of gallium nitride (GaN) power tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102931956A true CN102931956A (en) | 2013-02-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201210438919XA Pending CN102931956A (en) | 2012-11-05 | 2012-11-05 | Design implementing method capable of simultaneously improving efficiencies and reliability of gallium nitride (GaN) power tube |
Country Status (1)
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| CN (1) | CN102931956A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104901633A (en) * | 2015-06-26 | 2015-09-09 | 中国船舶重工集团公司第七二四研究所 | Power sequence controlling and modulating circuit for GaN power amplifier |
| EP3826173A4 (en) * | 2018-07-19 | 2021-08-25 | ZTE Corporation | POWER SUPPLY DEVICE AND PROCEDURE FOR POWER AMPLIFIER |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03195116A (en) * | 1989-12-25 | 1991-08-26 | Toyota Motor Corp | Pulse width modulation circuit |
| CN2371728Y (en) * | 1999-02-09 | 2000-03-29 | 北京自动化技术研究院 | All digital sine-wave pulse width modulating signal generator |
| US20030034853A1 (en) * | 2001-08-16 | 2003-02-20 | Delta Electronics, Inc. | Pulse width modulation integrated circuit chip |
-
2012
- 2012-11-05 CN CN201210438919XA patent/CN102931956A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03195116A (en) * | 1989-12-25 | 1991-08-26 | Toyota Motor Corp | Pulse width modulation circuit |
| CN2371728Y (en) * | 1999-02-09 | 2000-03-29 | 北京自动化技术研究院 | All digital sine-wave pulse width modulating signal generator |
| US20030034853A1 (en) * | 2001-08-16 | 2003-02-20 | Delta Electronics, Inc. | Pulse width modulation integrated circuit chip |
Non-Patent Citations (2)
| Title |
|---|
| 冷永清: "S波段GaN基HEMT内匹配平衡功率放大器研究", 《中国优秀硕士学位论文全文数据库》 * |
| 陈炽等: "X波段单级氮化镓固态放大器", 《西安电子科技大学学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104901633A (en) * | 2015-06-26 | 2015-09-09 | 中国船舶重工集团公司第七二四研究所 | Power sequence controlling and modulating circuit for GaN power amplifier |
| EP3826173A4 (en) * | 2018-07-19 | 2021-08-25 | ZTE Corporation | POWER SUPPLY DEVICE AND PROCEDURE FOR POWER AMPLIFIER |
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Application publication date: 20130213 |