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CN102903829B - 发光二极管光源装置 - Google Patents

发光二极管光源装置 Download PDF

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Publication number
CN102903829B
CN102903829B CN201110210604.5A CN201110210604A CN102903829B CN 102903829 B CN102903829 B CN 102903829B CN 201110210604 A CN201110210604 A CN 201110210604A CN 102903829 B CN102903829 B CN 102903829B
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light
emitting diode
diode chip
phosphor
source device
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CN102903829A (zh
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林厚德
张超雄
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Priority to TW100126627A priority patent/TWI462263B/zh
Priority to US13/424,367 priority patent/US8492778B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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Abstract

一种发光二极管光源装置，其包括基座、设于基座上的第一发光二极管芯片与第二发光二极管芯片、及一荧光粉层，该荧光粉层设置在遮挡所述第一发光二极管芯片及第二发光二极管芯片的出光方向上，该第一发光二极管芯片为紫外光发光二极管芯片，该荧光粉层内分布有若干荧光粉颗粒，各荧光粉颗粒的外周面包覆一层卤化银，当第二发光二极管芯片导通而第一发光二极管芯片非导通时，第二发光二极管芯片激发荧光粉层发光而产生一种色温；当第一发光二极管芯片与第二发光二极管芯片同时发光时，各荧光粉颗粒外周面的卤化银被第一发光二极管照射分解出银原子而挡设于荧光粉颗粒周围，该第二发光二极管芯片激发荧光粉层发光而产生另一种色温。

Description

发光二极管光源装置
技术领域
本发明涉及一种照明装置，尤其是一种发光二极管光源装置。
背景技术
发光二极管是一种节能、环保、长寿命的固体光源，因此近十几年来对发光二极管技术的研究一直非常活跃，发光二极管也有渐渐取代日光灯、白炽灯等传统光源的趋势。在现有技术中，发光二极管光源装置一般是将发光二极管芯片设置在电路板上，然后利用掺杂荧光粉的封装胶体封装该发光二极管，所述发光二极管芯片发出的光激发荧光粉射出到光源外部。但是，由于上述发光二极管仅能发出同一色温的光线，导致安装这些发光二极管的灯具的照明效果非常单一化，不能够满足实际需要。
发明内容
有鉴于此，有必要提供一种可改变色温的发光二极管光源装置。
一种发光二极管光源装置，其包括基座、设于基座上的第一发光二极管芯片与第二发光二极管芯片、及一荧光粉层，该荧光粉层设置在遮挡所述第一发光二极管芯片及第二发光二极管芯片的出光方向上，该第一发光二极管芯片为紫外光发光二极管芯片，该荧光粉层内分布有若干荧光粉颗粒，各荧光粉颗粒的外周面包覆一层卤化银，当第二发光二极管芯片导通而第一发光二极管芯片非导通时，第二发光二极管芯片激发荧光粉层发光而产生一种色温；当第一发光二极管芯片与第二发光二极管芯片同时发光时，各荧光粉颗粒外周面的卤化银被第一发光二极管照射分解出银原子而挡设于荧光粉颗粒周围，该第二发光二极管芯片激发荧光粉层发光而产生另一种色温。
与现有技术相比，该发光二极管光源装置可通过导通第一发光二极管芯片，而使各荧光粉颗粒外周面的卤化银被第一发光二极管照射分解出银原子而挡设于荧光粉颗粒周围，从而改变发光二极管光源装置的整体色温，进而达成该发光二极管光源装置的不同色温的需求。
附图说明
图1为本发明第一实施方式的发光二极管光源装置的剖面结构示意图。
图2为图1所示的发光二极管光源装置中的一个包覆有卤化银的荧光粉颗粒被第一发光二极管芯片照射后的示意图。
主要元件符号说明
发光二极管光源装置      100
基座                   10
第一发光二极管芯片      20
第二发光二极管芯片      30
荧光粉层               50
顶面                   11
底面                   13
容置槽                 15
第一电极               12
第二电极               14
第三电极               16
荧光粉颗粒             52
卤化银                 54
银原子                 56
导线                   60
倾斜面                 150
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
如图1所示，该发光二极管光源装置100包括一基座10、设置在该基座10内的一第一发光二极管芯片20、一第二发光二极管芯片30及一荧光粉层50。
该基座10包括一顶面11及与该顶面11相对的一底面13，该基座10从顶面11向底面13方向凹进形成一容置槽15。该容置槽15用于提供第一发光二极管芯片20、第二发光二极管芯片30及荧光粉层50的容置空间并设定发光二极管光源装置100的光场。所述容置槽15内表面的侧面为倾斜面150，该倾斜面150自顶面11向底面13方向延伸并沿容置槽15的径向向内倾斜，使整个容置槽15呈一上宽下窄的形状。优选地，容置槽15的内表面还涂敷有反光材料。
该基座10内还设置有相互间隔的第一电极12、第二电极14及第三电极16，所述第一电极12、第二电极14及第三电极16并排设于容置槽15的底端，且第一电极12及第三电极16分别位于第二电极14的两侧。该第一电极12及第三电极16的一端分别延伸至容置槽15的底端，另一端分别延伸至基座10的外侧，用于与外部电路连接，该第二电极14贯穿容置槽15的底端，用于与外部电路连接。
所述第一发光二极管芯片20及第二发光二极管芯片30设于基座10上，并收容于该容置槽15内。该第一发光二极管芯片20设于第一电极12上，其为紫外光的发光二极管芯片。该第一发光二极管芯片20的两端通过导线分别与基座10内的第一电极12及第三电极16连接。该第二发光二极管芯片30与第一发光二极管芯片20可各自控制。本实施例中，该第二发光二极管芯片30设于第二电极14上，其两端通过导线60分别与基座10内的第二电极14及第三电极16连接。具体实施时，该第二发光二极管芯片30也可设于第三电极16上，所述第一发光二极管芯片20及第二发光二极管芯片30还可以采用覆晶封装的方式设置在基座10上。
该荧光粉层50设置于基座10上，并封闭容置槽15的顶部开口，以遮挡该第一发光二极管芯片20及第二发光二极管芯片30的出光光路。该荧光粉层50由掺杂有荧光粉的封胶树脂制成，该荧光粉可选自钇铝石榴石、铽钇铝石榴石及硅酸盐中的一种或几种的组合。该荧光粉层50内均匀分布若干荧光粉颗粒52，各荧光粉颗粒52的外表面包覆有一卤化银54，该卤化银54内掺杂有少量的氧化铜。本实施例中，该第二发光二极管芯片30为蓝光二极管芯片，荧光粉为黄色的荧光粉。
使用时，当第二发光二极管芯片30导通而第一发光二极管芯片20非导通时，该第二发光二极管芯片30发出蓝光，该蓝光的一部分被荧光粉吸收而激发成黄光，该黄光继而与剩余的蓝光混合形成一定色温的白光。请同时参阅图2，当第一发光二极管芯片20也导通后，该第一发光二极管芯片20发射紫外光，该紫外光使得荧光粉颗粒52上的卤化银54形成氧化还原作用，其中银原子56会从卤化银54的化合物中分离出来，从而挡设于荧光粉颗粒52的外侧，进而减小各荧光粉颗粒52被第二发光二极管芯片30的激发面积，由此，减少第二发光二极管芯片30被荧光粉吸收的蓝光，使更多剩余的蓝光与黄光混合，从而提高该发光二极管光源装置100的整体色温。当第一发光二极管芯片20再关闭后，该银原子56在氧化铜的催化作用下与卤原子重新结合成卤化银54，恢复荧光粉颗粒52的激发面积，进而使发光二极管光源装置100恢复至原来的色温。由此，通过该第一发光二极管芯片20的关闭即可达成发光二极管光源装置100实现两种色温的目的。
另外，该发光二极管光源装置100还可通过控制该第一发光二极管芯片20的电流来控制第一发光二极管芯片20的发光强度，从而控制荧光粉颗粒52外侧的卤化银54的氧化还原的程度，来控制荧光粉颗粒52外侧的银原子56的数量，进而控制各荧光粉颗粒52的被第二发光二极管芯片30的激发面积的大小，来调节该发光二极管光源装置100的整体色温，以适应不同环境的需求。具体原理为：当第一发光二极管芯片20电流越低，卤化银54分离出的银原子56越少，荧光粉颗粒52被激发的面积越大，第二发光二极管芯片30被荧光粉吸收的光越多，从而该发光二极管光源装置100的整体色温降低；相反，当第一发光二极管芯片20电流越高，卤化银54分离出的银原子56越多，荧光粉颗粒52被激发的面积越小，第二发光二极管芯片30被荧光粉吸收的光越少，从而该发光二极管光源装置100的整体色温提高。由此，达成发光二极管光源装置100实现各种不同色温的目的。
具体实施时，该第二发光二极管芯片30的发光情况及荧光粉的颜色不受本实施例的限制，其也可为其他能相互配合且不对卤化银54的氧化还原造成影响的发光二极管芯片与荧光粉。该发光二极管光源装置100的第一发光二极管芯片20及第二发光二极管芯片30上还可包覆有一封装层，该封装层为一透明封胶树脂，用于保护第一及第二发光二极管芯片20、30免受灰尘、水气等影响。另外，该荧光粉层50也可直接填充封设于基座10的整个容置槽15内。
可以理解的是，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种像应的改变与变形，而所有这些改变与变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种发光二极管光源装置，其包括基座、设于基座上的第一发光二极管芯片与第二发光二极管芯片、及一荧光粉层，该荧光粉层设置在遮挡所述第一发光二极管芯片及第二发光二极管芯片的出光方向上，其特征在于：该第一发光二极管芯片为紫外光发光二极管芯片，该荧光粉层内分布有若干荧光粉颗粒，各荧光粉颗粒的外周面包覆一层卤化银，当第二发光二极管芯片导通而第一发光二极管芯片非导通时，第二发光二极管芯片激发荧光粉层发光而产生一种色温；当第一发光二极管芯片与第二发光二极管芯片同时发光时，各荧光粉颗粒外周面的卤化银被第一发光二极管照射分解出银原子而挡设于荧光粉颗粒周围，该第二发光二极管芯片激发荧光粉层发光而产生另一种色温。
2.如权利要求1所述的发光二极管光源装置，其特征在于：当第一发光二极管芯片与第二发光二极管芯片同时发光时，改变第一发光二极管芯片的发光强度来控制卤化银分解出的银原子的数量，从而调节该第二发光二极管芯片激发荧光粉层发光而产生的色温。
3.如权利要求1所述的发光二极管光源装置，其特征在于：所述卤化银中设有氧化铜，当第一发光二极管芯片由导通至关闭时，所述荧光粉颗粒周围的银原子与卤素原子在氧化铜的催化作用下重新结合成卤化银，所述发光二极管光源装置返回至只有第二发光二极管导通时的色温状态。
4.如权利要求2所述的发光二极管光源装置，其特征在于：所述卤化银中设有氧化铜，当第一发光二极管芯片的发光强度降低时，卤化银分解出的银原子的数量减少，荧光粉颗粒被第二发光二极管芯片激发的面积增大，所述第二发光二极管芯片激发荧光粉层发光而产生的色温降低；当第一发光二极管芯片的发光强度升高时，卤化银分解出的银原子的数量增加，荧光粉颗粒被第二发光二极管芯片激发的面积减小，所述第二发光二极管芯片激发荧光粉层发光而产生的色温提高。
5.如权利要求1至4任何一项所述的发光二极管光源装置，其特征在于：该荧光粉层由掺杂有荧光粉的封胶树脂制成。
6.如权利要求1所述的发光二极管光源装置，其特征在于：所述荧光粉颗粒均匀分布于荧光粉层中。
7.如权利要求1所述的发光二极管光源装置，其特征在于：所述基座上设有一容置槽，该容置槽的内表面为倾斜面，该倾斜面自基座顶面向基座底面方向延伸并向第一发光二极管芯片及第二发光二极管芯片的方向倾斜，容置槽的内表面还涂敷有反光材料。
8.如权利要求1所述的发光二极管光源装置，其特征在于：所述第一发光二极管芯片与第二发光二极管芯片可各自控制其开关及电流的大小。
9.如权利要求8所述的发光二极管光源装置，其特征在于：所述基座底面上设置有相互间隔的第一电极、第二电极及第三电极，所述第一发光二极管芯片与第一电极及第三电极连接，所述第二发光二极管芯片与第二电极及第三电极连接。
10.如权利要求1所述的发光二极管光源装置，其特征在于：所述第二发光二极管芯片为蓝光二极管芯片，所述荧光粉层为黄色的荧光粉。
CN201110210604.5A 2011-07-26 2011-07-26 发光二极管光源装置 Expired - Fee Related CN102903829B (zh)

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