CN102903800A - N-type electroconductive heat-conductive superlattice DBR (distributed Bragg reflector) vertical blue LED chip and production method thereof - Google Patents
N-type electroconductive heat-conductive superlattice DBR (distributed Bragg reflector) vertical blue LED chip and production method thereof Download PDFInfo
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Abstract
The invention provides an N-type electroconductive heat-conductive superlattice DBR (distributed Bragg reflector) vertical blue LED chip and a production method thereof. The method includes: firstly, forming a luminous epitaxial layer on the upper surface of a sapphire substrate; secondly, preparing a transparent electroconductive layer on the luminous epitaxial layer; thirdly, preparing an N-type electroconductive heat-conductive superlattice DBR layer on the transparent electroconductive layer by means of low-temperature evaporation, and enabling the transparent electroconductive layer to form ohmic contact with the N-type electroconductive heat-conductive superlattice DBR layer and the luminous epitaxial layer simultaneously; fourthly, bonding an electroconductive substrate onto the N-type electroconductive heat-conductive superlattice DBR layer to form a P electrode; and finally, stripping the sapphire substrate, and preparing an N electrode on the lower surface of the luminous epitaxial layer. The vertical blue LED chip produced by the method solves the problems that in the prior art, electrode materials of a vertical LED chip are difficult to form ohmic contact with P-GaN, a reflector is low in adhesion and lower in reflectivity at the high temperature, the preparation temperature of an electroconductive DBR is overhigh, the vertical blue LED chip using the electroconductive DBR as a highly reflective P electrode is overhigh in voltage, and the like.
Description
Technical field
The present invention relates to a kind of blue-light LED chip and preparation method thereof, particularly relate to rectilinear blue-light LED chip of a kind of N-type conductive and heat-conductive superlattice DBR and preparation method thereof.
Background technology
At present, common blue-light LED chip is divided into two kinds, be the blue-light LED chip of transversary (Lateral) and the blue-light LED chip of vertical stratification (Vertical), wherein, described its P of plane formula blue-ray LED, the N electrode is in the same side, P, N electrode homonymy certainly will etch away the part quantum well and prepare the N district, thereby wasted sizable a part of light-emitting area, and P, it is inhomogeneous that N electrode homonymy has CURRENT DISTRIBUTION, the shortcomings such as poor radiation, and CURRENT DISTRIBUTION is inhomogeneous and then have influence on voltage and the brightness of chip, thermal diffusivity missionary society causes junction temperature to raise, degradation problem under the internal quantum efficiency has influence on the light efficiency of chip.
And its P of rectilinear blue-light LED chip, N distribution of electrodes are in the both sides of quantum well, therefore do not need the etching quantum well, greatly improved the utilance of chip light emitting area, electric current evenly distributes perpendicular to chip, and each layer all can be selected the good material of thermal conductivity as far as possible in the rectilinear led chip structure, therefore the heat dispersion of rectilinear led chip is good, has greatly eliminated the junction temperature rising that heat accumulation brings, and internal quantum efficiency descends.Just because of these unique advantages, rectilinear led chip becomes the focus of LED research.
In the manufacturing process of at present common rectilinear blue-light LED chip, generally be directly to plate reflective metal Ag or Al on the surface of blue light emitting epitaxial loayer well known to those skilled in the art, but this kind way but has following shortcoming: 1, Ag and Al are difficult to P-GaN formation ohmic contact very high to the voltage that makes led chip; 2, the reflectivity of Ag and Al can sharply reduce along with the rising of temperature, when the led chip internal heat is gathered the temperature rising, because the decline of metallic reflection specular reflectivity causes the chip external quantum efficiency to reduce, thereby brightness and the luminous efficiency of led chip have been reduced; 3, the adhesiveness of Ag, Al and GaN is very poor, be easy to come off, and Ag at high temperature easily reunites.
Another kind of way is also arranged in the manufacturing process of rectilinear blue-light LED chip, after namely plating transparency conducting layer (TCO), on transparency conducting layer, plate again high-reflectivity metal Ag or Al, but, this kind way still has following shortcoming: 1, the reflectivity owing to Ag and Al can sharply reduce along with the rising of temperature, when the led chip internal heat is gathered the temperature rising, because the decline of metallic reflection specular reflectivity, cause the chip external quantum efficiency to reduce, thereby reduced brightness and the luminous efficiency of led chip; 2, the adhesiveness of Ag and Al and TCO film is very poor, easily come off, and Ag at high temperature can reunite.
For this reason, for the ohmic contact that how to solve rectilinear led chip P-GaN, the problem that reflectance of reflector descends under the bad and high temperature of speculum adhesiveness, current also have some scholars with reference to using metallo-organic compound CVD (Chemical Vapor Deposition) method (MOCVD in red-light LED and the yellow light LED, Metal-organic Chemical Vapor Deposition) experience of growth conduction DBR, MOCVD growth conduction DBR is used in trial on the surface of blue light emitting epitaxial loayer, because use MOCVD to be grown in indigo plant, growth temperature when having the conduction DBR that high permeability electric-conductivity heat-conductivity high film consists of in the green light band exceeds much than the growth temperature of the base in the quantum well and trap, directly cause quantum well performance degradation and chip wavelength very huge drift to occur, and the surface of blue light emitting epitaxial loayer is that the P type mixes, for and P-GaN between form good ohmic contact, generally select MOCVD at the superficial growth P-type conduction DBR of blue light emitting epitaxial loayer, but the difficulty that III-V compound semiconductor ubiquity P type mixes, and the carrier concentration of P type III-V compound semiconductor is not high, thereby cause resistivity excessive, there is the problem of overtension in the rectilinear blue-light LED chip made from this P-type conduction DBR.
Therefore, how to reduce the preparation temperature of conduction DBR and reduce to use conduction DBR as the voltage of the blue-light LED chip of P electrode, and then prepare low-voltage, the rectilinear blue-light LED chip of high axially output has become practitioner's problem demanding prompt solution of this area.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide rectilinear blue-light LED chip of a kind of N-type conductive and heat-conductive superlattice DBR and preparation method thereof, with the reflectivity of speculum a little less than the ohmic contact that solves above-mentioned rectilinear led chip P-GaN of the prior art, the speculum adhesiveness, under the high temperature descend, the preparation temperature of conduction DBR is too high and use conduction DBR as the problems such as blue-light LED chip overtension of P electrode.
Reach for achieving the above object other relevant purposes, the invention provides rectilinear blue-light LED chip of a kind of N-type conductive and heat-conductive superlattice DBR and preparation method thereof, wherein, described manufacture method may further comprise the steps at least: 1) Sapphire Substrate is provided, and forms luminous epitaxial loayer in the upper surface of described Sapphire Substrate; 2) evaporation one transparency conducting layer on described luminous epitaxial loayer; 3) adopt cryotronics bundle evaporation and assisting ion source compacting film technique to prepare N-type conductive and heat-conductive superlattice DBR layer at described transparency conducting layer, and by high annealing so that described transparency conducting layer and described N-type conductive and heat-conductive superlattice DBR layer and luminous epitaxial loayer form ohmic contact simultaneously; 4) provide a conductivity substrate, adopt wafer bond techniques described conductivity substrate to be bonded to the upper surface of described N-type conductive and heat-conductive superlattice DBR layer to form the P electrode; 5) utilize laser lift-off technique to peel off described Sapphire Substrate, so that described Sapphire Substrate is peeled off from the lower surface of described luminous epitaxial loayer; And 6) prepare the N electrode in the lower surface of described luminous epitaxial loayer.
Step 3 in manufacture method of the present invention) in, the described N-type conductive and heat-conductive superlattice DBR layer of preparing is that the first electrically conducting transparent heat conduction film and refractive index are different from the second electrically conducting transparent heat conduction film of described the first electrically conducting transparent heat conduction film and/or the sandwich construction that n kind electrically conducting transparent heat conduction film is superimposed.Particularly, described the first electrically conducting transparent heat conduction film is N-type doped superlattice type electrically conducting transparent heat conduction film Al
xGa
1-xN; Described the second electrically conducting transparent heat conduction film is N-type doped superlattice type electrically conducting transparent heat conduction film Al
yGa
1-yN, described n kind electrically conducting transparent heat conduction film are N-type doped superlattice type electrically conducting transparent heat conduction film Al
nGa
1-nN.
Step 4 in manufacture method of the present invention) in, be the upper surface that described conductivity substrate is bonded to described N-type conductive and heat-conductive superlattice DBR layer by a bonded layer; Described bonded layer is metal material, alloy material, non-metallic conducting material or organic conductive material, and described bonded layer is single layer structure or sandwich construction.
In manufacture method of the present invention, described conductivity substrate is metal material, alloy material or non-metallic conducting material, and described conductivity substrate is single layer structure or sandwich construction.
The present invention also provides the rectilinear blue-light LED chip of a kind of N-type conductive and heat-conductive superlattice DBR, it is characterized in that, comprising: luminous epitaxial loayer; Transparency conducting layer is stacked and placed on the upper surface of described luminous epitaxial loayer; N-type conductive and heat-conductive superlattice DBR layer is stacked and placed on the upper surface of described transparency conducting layer; Conductivity substrate is bonded to the upper surface of described N-type conductive and heat-conductive superlattice DBR layer to form the P electrode; And the N electrode, connect the lower surface that places described luminous epitaxial loayer.
In rectilinear blue-light LED chip of the present invention, described N-type conductive and heat-conductive superlattice DBR layer is that the first electrically conducting transparent heat conduction film and refractive index are different from the second electrically conducting transparent heat conduction film of described the first electrically conducting transparent heat conduction film and/or the sandwich construction that n kind electrically conducting transparent heat conduction film is superimposed.Particularly, described the first electrically conducting transparent heat conduction film is N-type doped superlattice type electrically conducting transparent heat conduction film Al
xGa
1-xN; Described the second electrically conducting transparent heat conduction film is N-type doped superlattice type electrically conducting transparent heat conduction film Al
yGa
1-yN, described n kind electrically conducting transparent heat conduction film are N-type doped superlattice type electrically conducting transparent heat conduction film Al
nGa
1-nN.
Rectilinear blue-light LED chip of the present invention, also include bonded layer, between described conductivity substrate and described N-type conductive and heat-conductive superlattice DBR layer, described bonded layer is metal material, alloy material, non-metallic conducting material or organic conductive material, and described bonded layer is single layer structure or sandwich construction.
In rectilinear blue-light LED chip of the present invention, described conductivity substrate is metal material, alloy material or non-metallic conducting material, and described conductivity substrate is single layer structure or sandwich construction.
As mentioned above, rectilinear blue-light LED chip of N-type conductive and heat-conductive superlattice DBR of the present invention and preparation method thereof has following beneficial effect:
1, utilizes the characteristics that are easy to form simultaneously ohmic contact between ITO and P-GaN and the N-type conductive and heat-conductive superlattice DBR, effectively reduce the voltage of rectilinear LED tube core.
2, N-type conductive and heat-conductive superlattice DBR is because be comprised of resistant to elevated temperatures transparent conductive semiconductor film, and and ITO between have good adhesiveness, use Ag and Al non-refractory and the bad shortcoming of adhesiveness before effectively having solved.
3, N-type conductive and heat-conductive superlattice DBR in wider wavelength band, can keep more than 99% directly to reflectivity, and this reflectivity do not raise with temperature and reduces, the reflectivity that has effectively solved Ag or AL can be with the shortcoming of drop in temperature.
4, to compare reflectivity at the reflectivity of blue green light wave band＞99% be that 91% Al and reflectivity are that 95% Ag has higher reflectivity to the combined type speculum that forms of N-type conductive and heat-conductive superlattice DBR/metal reflector, and compare simple metallic mirror and have better axially reflective, more be conducive to light is reflected back chip front side, improve the axial intensity of led chip and the luminous efficiency of chip.
5, N-type conductive and heat-conductive superlattice DBR has very excellent electric conductivity, the semi-conductive carrier concentration of N-type doped with II I-V family is very high, and the lattice structure between the adjacent two layers N-type doped superlattice type electrically conducting transparent heat conduction film and lattice constant are all mated in the extreme, so good crystallinity, carrier mobility is high, therefore N-type conductive and heat-conductive superlattice DBR has very excellent conductive capability, bring extra voltage can for rectilinear LED.
6, N-type conductive and heat-conductive superlattice DBR can adopt the method preparation of the simultaneously auxiliary compacting of ion source of cryotronics bundle evaporation, has effectively solved the MOCVD preparation negative effect that too high growth temperature is brought to quantum well when having the conduction DBR that high permeability high conductivity film consists of in blue, green light band and the drift of chip wavelength.
7, every one deck of N-type conductive and heat-conductive superlattice DBR all is the very good materials of thermal conductivity, heat can be conducted rapidly led chip, has effectively eliminated the junction temperature rising that heat accumulation brings, and internal quantum efficiency descends.
Description of drawings
Fig. 1 to Fig. 6 is shown as the led chip cross section structure schematic diagram that presents according to each step in the manufacture method of the present invention.
Fig. 7 is shown as of the present invention rectilinear blue-light LED chip cross section structure schematic diagram in another embodiment.
Embodiment
Below by particular specific embodiment explanation embodiments of the present invention, person skilled in the art scholar can understand other advantages of the present invention and effect easily by content disclosed in the present specification.
Notice, the appended graphic structure that illustrates of this specification, ratio, size etc., equal contents in order to cooperate specification to disclose only, understand and reading for person skilled in the art scholar, be not to limit the enforceable qualifications of the present invention, therefore the technical essential meaning of tool not, the adjustment of the modification of any structure, the change of proportionate relationship or size, not affecting under the effect that the present invention can produce and the purpose that can reach, all should still drop on disclosed technology contents and get in the scope that can contain.Simultaneously, that quotes in this specification reaches the term of " " etc. such as " upper surface ", " lower surface ", " left side ", " right side ", " centre ", " two ", also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the present invention, the change of its relativeness or adjustment, under without essence change technology contents, when also being considered as the enforceable category of the present invention.
See also Fig. 1 to Fig. 6, be shown as the middle led chip cross section structure schematic diagram that presents according to each step of the present invention.As shown in the figure, the invention provides the manufacture method of the rectilinear blue-light LED chip of a kind of N-type conductive and heat-conductive superlattice DBR, described manufacture method may further comprise the steps at least:
As shown in Figure 1, at first execution in step 1, and a Sapphire Substrate 11 is provided, and forms luminous epitaxial loayer 12 in the upper surface of described Sapphire Substrate 11.Follow execution in step 2.
As shown in Figure 2, in step 2, evaporation one transparency conducting layer 13 (ITO) on described luminous epitaxial loayer 12.Follow execution in step 3.
As shown in Figure 3, in step 3, adopt cryotronics bundle evaporation and assisting ion source compacting film technique to prepare N-type conductive and heat-conductive superlattice DBR layer 14 at described transparency conducting layer 13, in the present embodiment, the described N-type conductive and heat-conductive superlattice DBR layer 14 of preparing is different from the second electrically conducting transparent heat conduction film of described the first electrically conducting transparent heat conduction film and/or the sandwich construction that n kind electrically conducting transparent heat conduction film is superimposed for the first electrically conducting transparent heat conduction film and refractive index.Described N-type conductive and heat-conductive superlattice DBR layer 14 adopts the method preparation of the simultaneously auxiliary compacting of ion sources of cryotronics bundle evaporations, effectively solved the MOCVD preparation negative effect that too high growth temperature is brought to quantum well when having the conduction DBR that high permeability high conductivity film consists of in blue, green light band and the drift of chip wavelength.
More specifically, described the first electrically conducting transparent heat conduction film is N-type doped superlattice type electrically conducting transparent heat conduction film Al
xGa
1-xN; Described the second electrically conducting transparent heat conduction film is N-type doped superlattice type electrically conducting transparent heat conduction film Al
yGa
1-yN, described n kind electrically conducting transparent heat conduction film are N-type doped superlattice type electrically conducting transparent heat conduction film Al
nGa
1-nN, right, be not limited to this, described n kind electrically conducting transparent heat conduction film also may be N-type doped superlattice type electrically conducting transparent heat conduction film Al
aGa
1-aN, Al
bGa
1-bN, Al
cGa
1-cN ... Al
nGa
1-nN etc.Need to prove, the resistivity of described the second and n kind electrically conducting transparent heat conduction film is different from the resistivity of described the first electrically conducting transparent heat conduction film, and described the second and the transmitance of n kind electrically conducting transparent heat conduction film in blue wave band are more than 85%.
Then, by high annealing so that described transparency conducting layer 13 forms ohmic contact simultaneously with described N-type conductive and heat-conductive superlattice DBR layer 14 and luminous epitaxial loayer 12, formation possesses high conductivity, high-termal conductivity, high straight rectilinear led chip P electrode to reflectivity and good ohmic contact in follow-up step thereby be beneficial to, and then eliminate and use the rectilinear led chip P of classical inverse optoelectronic pole electrode sticking bad, ohmic contact is poor, the bad shortcomings that waits of axialmode reflectivity, to be easy to prepare low-voltage, the rectilinear blue-light LED chip of high axially output.Follow execution in step 4.
As shown in Figure 4, in step 4, provide a conductivity substrate 16, in the present embodiment, described conductivity substrate 16 is metal material, alloy material or non-metallic conducting material, and described conductivity substrate 16 is single layer structure or sandwich construction.Then, adopt wafer bond techniques described conductivity substrate 16 to be bonded to the upper surface of described N-type conductive and heat-conductive superlattice DBR layer 14 to form the P electrode, in the present embodiment, described conductivity substrate 16 is bonded to the upper surface of described N-type conductive and heat-conductive superlattice DBR layer 14 by one deck bonded layer 15, particularly, described bonded layer 15 is metal material (such as being Au, Cu, Sn, Ag etc.), alloy material, non-metallic conducting material or organic conductive material, and described bonded layer 15 can also can be sandwich construction for single layer structure.Certainly, in other embodiment, also can described conductivity substrate 16 be bonded to by the mode of Direct Bonding the upper surface of described N-type conductive and heat-conductive superlattice DBR layer 14 to form P electrode (not indicating).Follow execution in step 5.
As shown in Figure 5, in step 5, utilize laser lift-off technique to peel off described Sapphire Substrate 11, so that described Sapphire Substrate 11 is peeled off from the lower surface of described luminous epitaxial loayer 12.Follow execution in step 6.
As shown in Figure 6, in step 6, prepare N electrode 17 in the lower surface of described luminous epitaxial loayer 12, so far, namely produce low-voltage, the high axially rectilinear blue-light LED chip of N-type conductive and heat-conductive superlattice DBR of output.
The present invention also provides the rectilinear blue-light LED chip of a kind of N-type conductive and heat-conductive superlattice DBR, comprising: luminous epitaxial loayer 12, transparency conducting layer 13 (ITO), N-type conductive and heat-conductive superlattice DBR layer 14, conductivity substrate 16 and N electrode 17.For ease of understanding, please consult again Fig. 1 to Fig. 6.
As shown in the figure, described transparency conducting layer 13 is stacked and placed on the upper surface of described luminous epitaxial loayer 12.In the present embodiment, described luminous epitaxial loayer 12 is P-GaN layer or N-GaN layer.
Described N-type conductive and heat-conductive superlattice DBR layer 14 is stacked and placed on the upper surface of described transparency conducting layer 13, namely, described transparency conducting layer 13 and forms ohmic contact with described N-type conductive and heat-conductive superlattice DBR layer 14 and luminous epitaxial loayer 12 respectively between described N-type conductive and heat-conductive superlattice DBR layer 14 and luminous epitaxial loayer 12.
In the present embodiment, described N-type conductive and heat-conductive superlattice DBR layer 14 is different from the second electrically conducting transparent heat conduction film of described the first electrically conducting transparent heat conduction film and/or the sandwich construction that n kind electrically conducting transparent heat conduction film is superimposed for the first electrically conducting transparent heat conduction film and refractive index.Described N-type conductive and heat-conductive superlattice DBR layer 14 has solved the MOCVD preparation negative effect that too high growth temperature is brought to quantum well when having the conduction DBR that high permeability high conductivity film consists of in blue, green light band and the drift of chip wavelength effectively.
More specifically, described the first electrically conducting transparent heat conduction film is N-type doped superlattice type electrically conducting transparent heat conduction film Al
xGa
1-xN; Described the second electrically conducting transparent heat conduction film is N-type doped superlattice type electrically conducting transparent heat conduction film Al
yGa
1-yN, described n kind electrically conducting transparent heat conduction film are N-type doped superlattice type electrically conducting transparent heat conduction film Al
nGa
1-nN, right, be not limited to this, described n kind electrically conducting transparent heat conduction film also may be N-type doped superlattice type electrically conducting transparent heat conduction film Al
aGa
1-aN, Al
bGa
1-bN, Al
cGa
1-cN ... Al
nGa
1-nN etc.Need to prove, the resistivity of described the second and n kind electrically conducting transparent heat conduction film is different from the resistivity of described the first electrically conducting transparent heat conduction film, and described the second and the transmitance of n kind electrically conducting transparent heat conduction film in blue wave band are more than 85%.
Described conductivity substrate 16 is bonded to the upper surface of described N-type conductive and heat-conductive superlattice DBR layer 14 to form P electrode (not indicating), in the present embodiment, described conductivity substrate 16 is metal material, alloy material or non-metallic conducting material, and described conductivity substrate 16 is single layer structure or sandwich construction.
Rectilinear blue-light LED chip of the present invention also includes one deck bonded layer 15, between described conductivity substrate 16 and described N-type conductive and heat-conductive superlattice DBR layer 14, described bonded layer 15 is metal material (such as being Au, Cu, Sn, Ag etc.), alloy material, non-metallic conducting material or organic conductive material, and described bonded layer 15 is single layer structure or sandwich construction.
Described N electrode 17 connects the lower surface that places described luminous epitaxial loayer 12.
In another embodiment, rectilinear blue-light LED chip of the present invention also includes one deck scattered reflection type reflector 18, be arranged between described bonded layer 15 and the described N-type conductive and heat-conductive superlattice DBR layer 14, described scattered reflection type reflector 18 can be metal level or alloy-layer, also can be the single or multiple lift structure, be that 91% Al and reflectivity are that 95% Ag has higher reflectivity so that the combined type speculum that N-type conductive and heat-conductive superlattice DBR layer 14 and scattered reflection type reflector 18 form is compared reflectivity at the reflectivity of blue green light wave band＞99%, and compare simple metallic mirror and have better axially reflective, more be conducive to light is reflected back chip front side, improve the axial intensity of led chip and the luminous efficiency of chip.
In sum, rectilinear blue-light LED chip of N-type conductive and heat-conductive superlattice DBR of the present invention and preparation method thereof utilizes the characteristics that are easy to form simultaneously ohmic contact between ITO and P-GaN and the N-type conductive and heat-conductive superlattice DBR, effectively reduces the voltage of rectilinear LED tube core; And described N-type conductive and heat-conductive superlattice DBR layer is because be comprised of resistant to elevated temperatures transparent conductive semiconductor film, and and ITO between have good adhesiveness, use Ag and Al non-refractory and the bad shortcoming of adhesiveness before effectively having solved.Moreover, N-type conductive and heat-conductive superlattice DBR layer in wider wavelength band, can keep more than 99% directly to reflectivity, and this reflectivity do not raise with temperature and reduces, the reflectivity that has effectively solved Ag or AL can be with the shortcoming of drop in temperature.
In addition, because described N-type conductive and heat-conductive superlattice DBR layer has very excellent electric conductivity, the semi-conductive carrier concentration of N-type doped with II I-V family is very high, and the lattice structure between the adjacent two layers N-type doped superlattice type electrically conducting transparent heat conduction film and lattice constant are all mated in the extreme, so good crystallinity, carrier mobility is high, therefore N-type conductive and heat-conductive superlattice DBR has very excellent conductive capability, brings extra voltage can for rectilinear LED.Every one deck of N-type conductive and heat-conductive superlattice DBR layer among the present invention all is the very good materials of thermal conductivity, heat can be conducted rapidly led chip, has effectively eliminated the junction temperature rising that heat accumulation brings, and internal quantum efficiency descends.So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not is used for restriction the present invention.Any person skilled in the art scholar all can be under spirit of the present invention and category, and above-described embodiment is modified or changed.Therefore, have in the technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of finishing under disclosed spirit and the technological thought, must be contained by claim of the present invention.
Claims (10)
1. the manufacture method of the rectilinear blue-light LED chip of N-type conductive and heat-conductive superlattice DBR is characterized in that, described manufacture method may further comprise the steps at least:
1) provides a Sapphire Substrate, and form luminous epitaxial loayer in the upper surface of described Sapphire Substrate;
2) evaporation one transparency conducting layer on described luminous epitaxial loayer;
3) adopt cryotronics bundle evaporation and assisting ion source compacting film technique to prepare N-type conductive and heat-conductive superlattice DBR layer at described transparency conducting layer, and by high annealing so that described transparency conducting layer and described N-type conductive and heat-conductive superlattice DBR layer and luminous epitaxial loayer form ohmic contact simultaneously;
4) provide a conductivity substrate, adopt wafer bond techniques described conductivity substrate to be bonded to the upper surface of described N-type conductive and heat-conductive superlattice DBR layer to form the P electrode;
5) utilize laser lift-off technique to peel off described Sapphire Substrate, so that described Sapphire Substrate is peeled off from the lower surface of described luminous epitaxial loayer; And
6) prepare the N electrode in the lower surface of described luminous epitaxial loayer.
2. the manufacture method of the rectilinear blue-light LED chip of N-type conductive and heat-conductive superlattice DBR according to claim 1, it is characterized in that: in step 3) in, the described N-type conductive and heat-conductive superlattice DBR layer of preparing is that the first electrically conducting transparent heat conduction film and refractive index are different from the second electrically conducting transparent heat conduction film of described the first electrically conducting transparent heat conduction film and/or the sandwich construction that n kind electrically conducting transparent heat conduction film is superimposed.
3. the manufacture method of the rectilinear blue-light LED chip of N-type conductive and heat-conductive superlattice DBR according to claim 2, it is characterized in that: described the first electrically conducting transparent heat conduction film is N-type doped superlattice type electrically conducting transparent heat conduction film Al
xGa
1-xN; Described the second electrically conducting transparent heat conduction film is N-type doped superlattice type electrically conducting transparent heat conduction film Al
yGa
1-yN, described n kind electrically conducting transparent heat conduction film are N-type doped superlattice type electrically conducting transparent heat conduction film Al
nGa
1-nN.
4. the manufacture method of the rectilinear blue-light LED chip of N-type conductive and heat-conductive superlattice DBR according to claim 1, it is characterized in that: in step 4) in, be the upper surface that described conductivity substrate is bonded to described N-type conductive and heat-conductive superlattice DBR layer by a bonded layer; Described bonded layer is metal material, alloy material, non-metallic conducting material or organic conductive material, and described bonded layer is single layer structure or sandwich construction.
5. the manufacture method of the rectilinear blue-light LED chip of N-type conductive and heat-conductive superlattice DBR according to claim 1, it is characterized in that: described conductivity substrate is metal material, alloy material or non-metallic conducting material, and described conductivity substrate is single layer structure or sandwich construction.
6. the rectilinear blue-light LED chip of N-type conductive and heat-conductive superlattice DBR is characterized in that, comprising:
Luminous epitaxial loayer;
Transparency conducting layer is stacked and placed on the upper surface of described luminous epitaxial loayer;
N-type conductive and heat-conductive superlattice DBR layer is stacked and placed on the upper surface of described transparency conducting layer;
Conductivity substrate is bonded to the upper surface of described N-type conductive and heat-conductive superlattice DBR layer to form the P electrode; And the N electrode, connect the lower surface that places described luminous epitaxial loayer.
7. the rectilinear blue-light LED chip of N-type conductive and heat-conductive superlattice DBR according to claim 6, it is characterized in that: described N-type conductive and heat-conductive superlattice DBR layer is that the first electrically conducting transparent heat conduction film and refractive index are different from the second electrically conducting transparent heat conduction film of described the first electrically conducting transparent heat conduction film and/or the sandwich construction that n kind electrically conducting transparent heat conduction film is superimposed.
8. the rectilinear blue-light LED chip of N-type conductive and heat-conductive superlattice DBR according to claim 7, it is characterized in that: described the first electrically conducting transparent heat conduction film is N-type doped superlattice type electrically conducting transparent heat conduction film Al
xGa
1-xN; Described the second electrically conducting transparent heat conduction film is N-type doped superlattice type electrically conducting transparent heat conduction film Al
yGa
1-yN, described n kind electrically conducting transparent heat conduction film are N-type doped superlattice type electrically conducting transparent heat conduction film Al
nGa
1-nN.
9. the rectilinear blue-light LED chip of N-type conductive and heat-conductive superlattice DBR according to claim 6, it is characterized in that: also include bonded layer, between described conductivity substrate and described N-type conductive and heat-conductive superlattice DBR layer, described bonded layer is metal material, alloy material, non-metallic conducting material or organic conductive material, and described bonded layer is single layer structure or sandwich construction.
10. the rectilinear blue-light LED chip of N-type conductive and heat-conductive superlattice DBR according to claim 6, it is characterized in that: described conductivity substrate is metal material, alloy material or non-metallic conducting material, and described conductivity substrate is single layer structure or sandwich construction.
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| CN201110212625.0A CN102903800B (en) | 2011-07-28 | 2011-07-28 | N-type electroconductive heat-conductive superlattice DBR (distributed Bragg reflector) vertical blue LED chip and production method thereof |
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| CN201110212625.0A CN102903800B (en) | 2011-07-28 | 2011-07-28 | N-type electroconductive heat-conductive superlattice DBR (distributed Bragg reflector) vertical blue LED chip and production method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI838282B (en) * | 2022-06-24 | 2024-04-01 | 大陸商深圳市嘉敏利光電有限公司 | Light-emitting diode wafer and preparation method thereof |
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| CN101366121A (en) * | 2004-04-28 | 2009-02-11 | 沃提科尔公司 | Vertical Structure Semiconductor Devices |
| CN101877379A (en) * | 2009-02-25 | 2010-11-03 | Lg伊诺特有限公司 | Light emitting device |
| US20110049472A1 (en) * | 2007-10-29 | 2011-03-03 | Seoul Opto Device Co., Ltd. | Light emitting diode |
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| US5351256A (en) * | 1993-04-28 | 1994-09-27 | The United States Of America As Represented By The United States Department Of Energy | Electrically injected visible vertical cavity surface emitting laser diodes |
| CN101366121A (en) * | 2004-04-28 | 2009-02-11 | 沃提科尔公司 | Vertical Structure Semiconductor Devices |
| US20110049472A1 (en) * | 2007-10-29 | 2011-03-03 | Seoul Opto Device Co., Ltd. | Light emitting diode |
| CN101877379A (en) * | 2009-02-25 | 2010-11-03 | Lg伊诺特有限公司 | Light emitting device |
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