CN203659930U - Metallic reflecting layer-equipped semiconductor illuminating device - Google Patents
Metallic reflecting layer-equipped semiconductor illuminating device Download PDFInfo
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- CN203659930U CN203659930U CN201320669246.9U CN201320669246U CN203659930U CN 203659930 U CN203659930 U CN 203659930U CN 201320669246 U CN201320669246 U CN 201320669246U CN 203659930 U CN203659930 U CN 203659930U
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- Prior art keywords
- layer
- metallic reflector
- bond pad
- type semiconductor
- semiconductor layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims description 68
- 239000002184 metal Substances 0.000 claims description 68
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 41
- 229910052759 nickel Inorganic materials 0.000 claims description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- 238000000605 extraction Methods 0.000 abstract description 4
- 238000003466 welding Methods 0.000 abstract 6
- 150000004767 nitrides Chemical class 0.000 description 20
- 238000005516 engineering process Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- -1 nitride compound Chemical class 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 210000004276 hyalin Anatomy 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Abstract
A metallic reflecting layer-equipped semiconductor illuminating device is disclosed and comprises a substrate, an N type semiconductor layer, an illuminating layer, a P type semiconductor layer, a wire-bonding welding disc, and a metallic reflecting layer, wherein the N type semiconductor layer, the illuminating layer and the P type semiconductor layer are formed on the substrate; the wire-bonding welding disc is arranged on the N type semiconductor layer or the P type semiconductor layer, the metallic reflecting layer contacts with the wire-bonding welding disc, and the metallic reflecting layer is 50 to 1000 nanometers in thickness. The metallic reflecting layer-equipped semiconductor illuminating device is characterized in that through arrangement of the metallic reflecting layer contacting with the wire-bonding welding disc, photons sent by an active layer can be prevented from being absorbed by the wire-bonding welding disc, photons absorbed by the wire-bonding welding disc can be reduced, and therefore the illuminating device can be improved in light extraction efficiency.
Description
Technical field
The utility model belongs to technical field of semiconductor luminescence, relates in particular to a kind of light emitting semiconductor device with metallic reflector.
Background technology
Light emitting semiconductor device, as light-emitting diode (LED) or laser diode etc. are widely used in a lot of fields.The appearance of light emitting semiconductor device has brought can covering visible light spectrum and higher luminous efficiency and solid-state stable light source.Light-emitting diode or laser diode are usually included in the nitride semiconductor layer of being manufactured by epitaxy technique in microelectronic substrate and on substrate.This substrate can be GaAs, gallium phosphide, carborundum and/or sapphire.
Fig. 1 is the structural representation of a kind of III group nitride compound semiconductor light emitting element of the prior art.This III nitride semiconductor devices comprises substrate 10, epitaxially grown resilient coating 20 on substrate 10, epitaxially grown n type nitride semiconductor layer 30 on resilient coating 20, epitaxially grown active layer 40 on n type nitride semiconductor layer 30, epitaxially grown P type nitride semiconductor layer 50 on active layer 40, the P lateral electrode 60 forming on P type nitride semiconductor layer 50, the P side pad 70 forming in P lateral electrode 60, N lateral electrode 80 and the diaphragm 90 on n type nitride semiconductor layer 30 that be formed at exposing by etching P type nitride semiconductor layer 50 and active layer 40.
The substrate 10 of described III group nitride compound semiconductor light emitting element, can adopt GaN substrate as homo-substrate (homo-substrate), adopt Sapphire Substrate, SiC substrate or Si substrate as foreign substrate (hetero-substrate), the substrate of any type that nitride semiconductor layer can be grown thereon all can adopt.In the time that substrate 10 is SiC substrate, N lateral electrode 80 can be formed on SiC substrate side.On substrate 10, epitaxially grown nitride semiconductor layer is conventionally by metal organic chemical vapor deposition (MOCVD) growth.
In n type nitride semiconductor layer 30, at least form region (N-type contact layer) doped with dopant in N lateral electrode 80.For example N-type contact layer is made up of GaN and doped with Si.United States Patent (USP) 5,733,796 disclose the technology with target doping content doped N-type contact layer by the mixed proportion of adjusting Si and other source material.
P type nitride semiconductor layer 50 is doped with the suitable dopant such as such as Mg, and has P-type conduction by start-up course.United States Patent (USP) 5,247,533 disclose the technology that starts P type nitride semiconductor layer by electron beam irradiation.United States Patent (USP) 5,306,662 disclose by starting the technology of P type nitride semiconductor layer exceeding 400 DEG C of annealing.
Fig. 2 is United States Patent (USP) 6,307, the structural representation of disclosed another kind of luminescent device in 218.There is larger area or need to change in the III group nitride compound semiconductor light emitting element of arrangement of electrodes in product specification, providing different finger electrode 14a, 14b to realize steady supply electric current.But in the time that the number of finger electrode 14a, 14b increases, the light-emitting area of III group nitride compound semiconductor light emitting element active layer can reduce, and finger electrode 14a and 14b absorb and be reflected in the photon (light) producing in luminescent device, reduces external quantum efficiency.Add that luminescent device can not reflect all light being produced by active layer, the external quantum efficiency of luminescent device is further restricted.
In order to improve external quantum efficiency, in gallium nitride based LED, provide current expansion contact layer to improve the uniformity of the cross section carrier injection of crossing over luminescent device.Electric current is injected into the P side of LED by bond pad and P type contact layer.P type contact layer provides substantially uniformly carrier injection in active layer.Be hyaline layer owing to playing the contact layer of current expansion effect, active layer can obtain the full and uniform photon of transmitting.But because line bond pad is generally opaque structure, the photon from active layer transmitting therefore inciding on line bond pad can be absorbed by line bond pad.
As shown in Figure 3, Fig. 3 is the structural representation of the light emitting semiconductor device of another structure in prior art, n type semiconductor layer 12 is set on substrate 1, N contact metal layer 2 is arranged at substrate 1 opposite side, active layer 14 is arranged on n type semiconductor layer 12, P shape semiconductor layer 16 is arranged on active layer 14, and P contact metal layer 18 is arranged on p type semiconductor layer 16.Wired bond pad is provided on p type semiconductor layer 18, between online bond pad and P contact metal layer 18, be provided with metallic reflector, metallic reflector is made up of golden nickel, more than 95% surface, this conventional metals reflector is gold (Au) composition, its reflectivity is lower than 40%, and the most of light therefore inciding on line bond pad is absorbed.Add by line bond pad and absorb photon, the amount of the light of escaping from LED will reduce, thereby reduce the external quantum efficiency of LED.
Utility model content
For above deficiency, thereby the purpose of this utility model is to provide a kind of light emitting semiconductor device with metallic reflector that improves external quantum efficiency by reducing the photonic absorption of line bond pad.
To achieve these goals, the utility model is taked following technical solution:
The light emitting semiconductor device with metallic reflector, comprising: substrate, is formed at n type semiconductor layer, luminescent layer and p type semiconductor layer on described substrate; Be arranged at the line bond pad on described n type semiconductor layer or p type semiconductor layer; Also comprise the metallic reflector contacting with described line bond pad, the thickness of described metallic reflector is 50～1000 nanometers.
Metal contact layer of the present utility model is made up of silver, nickel metal layer or is formed or be made up of or for rhodium metal layer silver, aluminum metal layer by aluminium, nickel metal layer.
The thickness of metallic reflector of the present utility model is 50～300 nanometers.
On p type semiconductor layer of the present utility model, be provided with the first metal contact layer, described line bond pad is arranged on described the first metal contact layer, and described metallic reflector is arranged between described the first metal contact layer and described line bond pad.
Substrate of the present utility model below is provided with the second metal contact layer.
Metallic reflector of the present utility model is made up of silver metal layer and nickel metal layer, and described silver metal layer is arranged at described line bond pad below, and described nickel metal layer is arranged between described silver metal layer and described the first metal contact layer.
On p type semiconductor layer of the present utility model, be provided with the first metal contact layer, described line bond pad is arranged on described the first metal contact layer, and described metallic reflector is arranged between described the first metal contact layer and described line bond pad; Wired bond pad is set on described n type semiconductor layer, between online bond pad and n type semiconductor layer, is provided with metallic reflector.
Metallic reflector of the present utility model is made up of aluminum metal layer and nickel metal layer, described aluminum metal layer is arranged at described line bond pad below, and described nickel metal layer is arranged between described silver metal layer and described the first metal contact layer and described silver metal layer and n type semiconductor layer.
Metallic reflector of the present utility model is covered in described line bond pad except the periphery for routing join domain.
From above technical scheme, the utility model is by arranging the metallic reflector contacting with line bond pad, by the reflex of metallic reflector, stop that the photon of being launched by active layer is absorbed by line bond pad, reduce the photon amount being absorbed by line bond pad, thereby improve all light extraction efficiencies from luminescent device.
Brief description of the drawings
In order to be illustrated more clearly in the embodiment of the present invention, to the accompanying drawing of required use in embodiment or description of the Prior Art be done to simple introduction below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of a kind of III group nitride compound semiconductor light emitting element in prior art;
Fig. 2 is the structural representation of another kind of light emitting semiconductor device in prior art;
Fig. 3 is the structural representation of another light emitting semiconductor device in prior art;
Fig. 4 is the structural representation of the utility model embodiment 1;
Fig. 5 is the structural representation of the utility model embodiment 2;
Fig. 6 is the structural representation of the utility model embodiment 3.
Embodiment
As shown in Figure 4, light emitting semiconductor device of the present utility model comprises substrate 1, stacks gradually the n type semiconductor layer 2, active layer 3 and the p type semiconductor layer 4 that are formed on substrate 1, and N electrode (not shown) and P electrode (not shown) form ohmic contact with N semi-conductor type layer 2 and p type semiconductor layer 4 respectively with micro alloy technique.
On p type semiconductor layer 4, be provided with the first metal contact layer 5, the first metal contact layers 5 and p type semiconductor layer 4 ohmic contact, the first metal contact layer 5 has the effect of current extending.The photon that active layer 3 is launched can pass through the first metal contact layer 5.The first metal contact layer 5 can be Pt layer or ITO layer, and for example the first contact metal layer 5 is that thickness is about the Pt layer that the Pt layer of 54 nanometers or thickness are less than 10 nanometers.
The present embodiment is provided with the second metal contact layer 8 below substrate 1.The second metal contact layer 8 can be arranged at above or below substrate 1, and second metal contact layer 8 of the present embodiment is arranged at substrate 1 below.
The utility model, by between the line bond pad at absorption photon and metal contact layer, metallic reflector being set, reduces the photon amount being absorbed by line bond pad; And, can also increase the internal reflection of the light that enters the first contact metal layer, thereby improve all light extraction efficiencies from luminescent device.
As shown in Figure 5, light emitting semiconductor device of the present utility model comprises substrate 1, stacks gradually the n type semiconductor layer 2, active layer 3 and the p type semiconductor layer 4 that are formed on substrate 1, and N electrode (not shown) and P electrode (not shown) form ohmic contact with N semi-conductor type layer 2 and p type semiconductor layer 4 respectively with micro alloy technique.
On p type semiconductor layer 4, be provided with the first metal contact layer 5, the first metal contact layers 5 and p type semiconductor layer 4 ohmic contact, the first metal contact layer 5 has the effect of current extending.The photon that active layer 3 is launched can pass through the first metal contact layer 5.Wired bond pad 6 is set on the first metal contact layer 5, between the first metal contact layer 5 and line bond pad 6, metallic reflector 7 is set.The metallic reflector 7 of the present embodiment is made up of aluminum metal layer and nickel metal layer, and wherein, aluminum metal layer 7-1 is arranged at line bond pad 6 belows, and nickel metal layer 7-2 is arranged between silver metal layer 3-1 and the first metal contact layer 5.
As shown in Figure 6, the present embodiment place different from embodiment 1 is: except line bond pad 6 is for routing join domain, metallic reflector 7 is covered in the periphery of line bond pad 6, the thickness of this metallic reflector 7 is 50～300 nanometers, and metallic reflector 7 can be rhodium metal layer or is made up of silver metal layer and aluminum metal layer.In the line bond pad periphery that absorbs photon, metallic reflector is set, stops the photon of active layer transmitting to be absorbed by line bond pad, thereby improve all light extraction efficiencies of luminescent device.
In this specification, various piece adopts the mode of going forward one by one to describe, and what each part stressed is and the difference of other parts, between various piece same or similar part mutually referring to.To the above-mentioned explanation of the disclosed embodiments, make professional and technical personnel in the field can realize or use the utility model.To be apparent for those skilled in the art to the multiple amendment of these embodiment, General Principle as defined herein can, in the situation that not departing from spirit or scope of the present utility model, realize in other embodiments.Therefore, the utility model will can not be restricted to embodiment illustrated herein, but will meet the wide region consistent with principle disclosed herein and features of novelty.
Claims (9)
1. the light emitting semiconductor device with metallic reflector, comprising: substrate, is formed at n type semiconductor layer, luminescent layer and p type semiconductor layer on described substrate; Be arranged at the line bond pad on described n type semiconductor layer or p type semiconductor layer;
It is characterized in that, also comprise
With the metallic reflector that described line bond pad contacts, the thickness of described metallic reflector is 50～1000 nanometers.
2. the light emitting semiconductor device with metallic reflector as claimed in claim 1, is characterized in that: described metal contact layer is made up of silver, nickel metal layer or is formed or be made up of or for rhodium metal layer silver, aluminum metal layer by aluminium, nickel metal layer.
3. the light emitting semiconductor device with metallic reflector as claimed in claim 1, is characterized in that: the thickness of described metallic reflector is 50～300 nanometers.
4. the light emitting semiconductor device with metallic reflector as described in claim 1 or 2 or 3, it is characterized in that: on described p type semiconductor layer, be provided with the first metal contact layer, described line bond pad is arranged on described the first metal contact layer, and described metallic reflector is arranged between described the first metal contact layer and described line bond pad.
5. the light emitting semiconductor device with metallic reflector as claimed in claim 4, is characterized in that: described substrate below is provided with the second metal contact layer.
6. the light emitting semiconductor device with metallic reflector as claimed in claim 4, it is characterized in that: described metallic reflector is made up of silver metal layer and nickel metal layer, described silver metal layer is arranged at described line bond pad below, and described nickel metal layer is arranged between described silver metal layer and described the first metal contact layer.
7. the light emitting semiconductor device with metallic reflector as described in claim 1 or 2 or 3, it is characterized in that: on described p type semiconductor layer, be provided with the first metal contact layer, described line bond pad is arranged on described the first metal contact layer, and described metallic reflector is arranged between described the first metal contact layer and described line bond pad; Wired bond pad is set on described n type semiconductor layer, between online bond pad and n type semiconductor layer, is provided with metallic reflector.
8. the light emitting semiconductor device with metallic reflector as claimed in claim 7, it is characterized in that: described metallic reflector is made up of aluminum metal layer and nickel metal layer, described aluminum metal layer is arranged at described line bond pad below, and described nickel metal layer is arranged between described aluminum metal layer and described the first metal contact layer and described aluminum metal layer and n type semiconductor layer.
9. the light emitting semiconductor device with metallic reflector as described in claim 1 or 2 or 3, is characterized in that: described metallic reflector is covered in described line bond pad except the periphery for routing join domain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320669246.9U CN203659930U (en) | 2013-10-24 | 2013-10-24 | Metallic reflecting layer-equipped semiconductor illuminating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320669246.9U CN203659930U (en) | 2013-10-24 | 2013-10-24 | Metallic reflecting layer-equipped semiconductor illuminating device |
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| Publication Number | Publication Date |
|---|---|
| CN203659930U true CN203659930U (en) | 2014-06-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201320669246.9U Expired - Lifetime CN203659930U (en) | 2013-10-24 | 2013-10-24 | Metallic reflecting layer-equipped semiconductor illuminating device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105449051A (en) * | 2014-08-25 | 2016-03-30 | 东莞市中镓半导体科技有限公司 | A method for preparing high-brightness homogeneous LEDs on GaN substrates or GaN/Al2O3 composite substrates using MOCVD technology |
-
2013
- 2013-10-24 CN CN201320669246.9U patent/CN203659930U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105449051A (en) * | 2014-08-25 | 2016-03-30 | 东莞市中镓半导体科技有限公司 | A method for preparing high-brightness homogeneous LEDs on GaN substrates or GaN/Al2O3 composite substrates using MOCVD technology |
| CN105449051B (en) * | 2014-08-25 | 2018-03-27 | 东莞市中镓半导体科技有限公司 | One kind is using MOCVD technologies in GaN substrate or GaN/Al2O3The method that high brightness homogeneity LED is prepared in compound substrate |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140618 |