CN102881632B - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor device Download PDFInfo
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- CN102881632B CN102881632B CN201110195551.4A CN201110195551A CN102881632B CN 102881632 B CN102881632 B CN 102881632B CN 201110195551 A CN201110195551 A CN 201110195551A CN 102881632 B CN102881632 B CN 102881632B
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- CN
- China
- Prior art keywords
- layer
- adhesion layer
- insulating barrier
- copper metal
- carborundum
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052802 copper Inorganic materials 0.000 claims abstract description 44
- 239000010949 copper Substances 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 35
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- XZMCDFZZKTWFGF-UHFFFAOYSA-N Cyanamide Chemical compound NC#N XZMCDFZZKTWFGF-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000002243 precursor Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910003978 SiClx Inorganic materials 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 abstract 2
- 230000006872 improvement Effects 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- -1 silicon hydrogen Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides a manufacturing method of a semiconductor device, which comprises the following steps: providing a semiconductor substrate, forming insulating layers on the semiconductor substrate and forming copper interconnecting lines in the insulating layers; forming an adhering layer on the insulating layers and the copper interconnecting lines, wherein the adhering layer is a Si-rich silicon nitride layer mixed with carbon; and forming a blocking layer on the adhering layer. According to the manufacturing method of the semiconductor device, adhesiveness between the copper interconnecting lines and the silicon nitride blocking layer can be improved so as to effectively stop the diffusion of copper metal.
Description
Technical field
The present invention relates to semiconductor fabrication process, in particular to a kind of method improving tack between copper metal interconnecting wires and carborundum barrier layer.
Background technology
Copper metal has low resistance constant and high electron mobility impedance, therefore, adopts copper metal can reduce the thickness of interconnection layer as metal interconnecting wires, reduces the distributed capacitance between interconnection layer, and then improve signaling rate.Because copper metal is vulnerable to oxidation, and be easily diffused in adjacent material and go, so, adopt copper metal as metal interconnecting wires, need on copper interconnecting line, cover barrier layer and sealed.
Usual employing silicon nitride is as the material of barrier layer, and traditional utilizes silane (SiH
4) and ammonia (NH
3) react containing a large amount of silicon hydrogen (Si-H) keys in the barrier layer materials of the method formation generating silicon nitride, hydrogen wherein can be diffused in adjacent dielectric layer by copper metal, and then affects the breakdown characteristics of dielectric layer, causes device performance to decline.Adopt other organic precursors to form carborundum, the carborundum of doping nitrogen or the carborundum of such as other elements of silicon oxide carbide, hydrocarbon SiClx and so on doping and can solve as barrier layer materials the problem that hydrogen affects dielectric layer breakdown characteristics.But, interfacial characteristics between copper metal and above-mentioned carborundum barrier layer is poor, thus the tack had influence on therebetween, final affect puncture voltage (VBD), through time dielectric breakdown (TDDB), electromigration (EM), the related electrical parameters such as stress migration (SM), cause the problems such as the electromigration invalidation of device.Meanwhile, for from complete cmp remove unnecessary copper metal to the requirement in time interval depositing silicon carbide barrier layer also can correspondingly shorten, be unfavorable for the conversion between the manufacturing process of front and back.
Therefore, need to propose a kind of method, improve the tack between copper metal interconnecting wires and carborundum barrier layer, effectively stop the diffusion of copper metal.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of manufacture method of semiconductor device, comprising: Semiconductor substrate is provided, form insulating barrier on the semiconductor substrate, and form copper metal interconnecting wires in described insulating barrier; Described insulating barrier and copper metal interconnecting wires form adhesion layer, and described adhesion layer is the rich silicon nitride layer of doping carbon; Described adhesion layer forms barrier layer.
Preferably, chemical vapor deposition method is adopted to form described adhesion layer.
Preferably, the precursor material forming described adhesion layer comprises hexamethyldisiloxane.
Preferably, the precursor material forming described adhesion layer also comprises cyanamide.
Preferably, the flow of hexamethyldisiloxane is 100-1000sccm, and the flow of cyanamide is 100-500sccm.
Preferably, adopt helium as the carrier gas of described chemical vapour deposition (CVD).
Preferably, the flow of helium is 1000-3000sccm.
Preferably, described chemical vapor deposition processes is at pressure 3-7Torr, carries out under the condition of power 50-500W.
Preferably, the thickness of described adhesion layer is 20-100 dust.
Preferably, chemical vapor deposition method or spin coating proceeding is adopted to form described barrier layer.
Preferably, the material of described barrier layer is carborundum, the doping carborundum of nitrogen, silicon oxide carbide or hydrocarbon SiClx.
Preferably, in-situ deposition technique is adopted to form described adhesion layer.
Preferably, described insulating barrier is the material layer with low-k.
According to the present invention, the tack between copper metal interconnecting wires and carborundum barrier layer can be improved, effectively stop the diffusion of copper metal.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining principle of the present invention.
In accompanying drawing:
Figure 1A-Fig. 1 C is the schematic cross sectional view of each step of the method for tack between the improvement copper metal interconnecting wires that proposes of the present invention and carborundum barrier layer;
Fig. 2 is the flow chart of the method for tack between the improvement copper metal interconnecting wires that proposes of the present invention and carborundum barrier layer.
Embodiment
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it is obvious to the skilled person that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
In order to thoroughly understand the present invention, by following description, detailed step is proposed, to explain the present invention how to improve tack between copper metal interconnecting wires and carborundum barrier layer.Obviously, the specific details that the technical staff that execution of the present invention is not limited to semiconductor applications has the knack of.Preferred embodiment of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other execution modes.
Should be understood that, " comprise " when using term in this manual and/or " comprising " time, it indicates exists described feature, entirety, step, operation, element and/or assembly, but does not get rid of existence or additional other features one or more, entirety, step, operation, element, assembly and/or their combination.
Below, the detailed step of the method for tack between the improvement copper metal interconnecting wires of the present invention's proposition and carborundum barrier layer is described with reference to Figure 1A-Fig. 1 C and Fig. 2.
With reference to Figure 1A-Fig. 1 C, illustrated therein is the schematic cross sectional view of each step of the method for tack between the improvement copper metal interconnecting wires of the present invention's proposition and carborundum barrier layer.
First, as shown in Figure 1A, provide Semiconductor substrate 100, the constituent material of described Semiconductor substrate 100 can adopt unadulterated monocrystalline silicon, monocrystalline silicon, silicon-on-insulator (SOI) etc. doped with impurity.Exemplarily, in the present embodiment, Semiconductor substrate 100 selects single crystal silicon material to form.Isolation channel is formed with, buried regions in Semiconductor substrate 100, and various trap (well) structure, in order to simplify, omitted in diagram.
In described Semiconductor substrate 100, be formed with various element, in order to simplify, be omitted in diagram, an insulating barrier 101 is only shown here, it typically is the material layer with low-k, in the present embodiment, adopt silicon oxide layer.The groove for filling metal interconnecting wires is formed in described insulating barrier 101.Deposit a metal level, such as copper metal layer, on described insulating barrier 101, and fill up the groove in described insulating barrier 101.Adopt chemical mechanical milling tech to remove unnecessary copper metal layer, be ground to the surface termination of described insulating barrier 101, in described insulating barrier 101, form copper metal interconnecting wires 102.
Then, as shown in Figure 1B, described insulating barrier 101 and copper metal interconnecting wires 102 form an adhesion layer 103.Adopt chemical vapor deposition method to form described adhesion layer 103, wherein, with the carrier gas of helium (He) as chemical vapour deposition (CVD), use hexamethyldisiloxane (C respectively
6h
19nSi
2) and cyanamide (CH
2n
2) replace silane (SiH
4) and ammonia (NH
3) as the precursor material forming described adhesion layer 103, C
6h
19nSi
2with CH
2n
2the rich silicon nitride of the formation doping carbon that reacts, as the material of described adhesion layer 103, reduces hydrogen to the impact of described insulating barrier 101 breakdown characteristics.
Adopt in-situ deposition technique to form described adhesion layer 103, the concrete technology parameter of described chemical vapor deposition method is as follows: pressure 3-7Torr, power 50-500W, C
6h
19nSi
2flow be 100-1000sccm, CH
2n
2flow be the flow of 100-500sccm, He be 1000-3000sccm.The thickness of the described adhesion layer 103 that deposition is formed is 20-100 dust.
Then, as shown in Figure 1 C, described adhesion layer 103 forms a barrier layer 104.The material forming described barrier layer 104 is carborundum, the carborundum of doping nitrogen or the carborundum of such as other elements of silicon oxide carbide, hydrocarbon SiClx and so on doping.The method forming described barrier layer 104 adopts chemical vapor deposition method or spin coating proceeding.
So far, complete whole processing steps that method is according to an exemplary embodiment of the present invention implemented, by forming the rich silicon nitride of doping carbon as adhesion layer between copper metal interconnecting wires and carborundum barrier layer, can improve the tack between copper metal interconnecting wires and carborundum barrier layer, effectively resistance copper metal interconnecting wires stops the diffusion of copper metal.
It should be noted that, on described carborundum barrier layer, insulating barrier can be formed again, form copper metal interconnecting wires in a insulating layer simultaneously, then on insulating barrier and copper metal interconnecting wires, the rich silicon nitride of doping carbon is formed as adhesion layer, on adhesion layer, form carborundum barrier layer again, by that analogy, form a kind of multiple level interconnect architecture.Wherein, the carborundum barrier layer of lower one deck can as the etch stop layer forming copper metal interconnecting wires in last layer insulating barrier, simultaneously, in fact described adhesion layer and carborundum barrier layer form double-deck copper metal barrier layer, the stress that can reduce last layer insulating barrier and the generation of copper metal interconnecting wires, on the impact of lower one deck copper metal barrier layer, effectively stops the diffusion of copper metal.
With reference to Fig. 2, illustrated therein is the flow chart of the method for tack between the improvement copper metal interconnecting wires of the present invention's proposition and carborundum barrier layer, for schematically illustrating the flow process of whole manufacturing process.
In step 201, provide Semiconductor substrate, form insulating barrier on the semiconductor substrate, and form copper metal interconnecting wires in described insulating barrier;
In step 202., described insulating barrier and copper metal interconnecting wires form adhesion layer, described adhesion layer is the rich silicon nitride layer of doping carbon;
In step 203, described adhesion layer forms barrier layer.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (12)
1. a manufacture method for semiconductor device, comprising:
Semiconductor substrate is provided, forms insulating barrier on the semiconductor substrate, and form copper metal interconnecting wires in described insulating barrier;
Described insulating barrier and copper metal interconnecting wires form adhesion layer, described adhesion layer is the rich silicon nitride layer of doping carbon, the precursor material forming described adhesion layer comprises hexamethyldisiloxane and cyanamide, with the impact of insulating barrier breakdown characteristics described in the diffusion couple reducing hydrogen;
Described adhesion layer forms barrier layer.
2. method according to claim 1, is characterized in that, adopts chemical vapor deposition method to form described adhesion layer.
3. method according to claim 1, is characterized in that, the flow of described hexamethyldisiloxane is 100-1000sccm.
4. method according to claim 1, is characterized in that, the flow of described cyanamide is 100-500sccm.
5. method according to claim 2, is characterized in that, adopts helium as the carrier gas of described chemical vapour deposition (CVD).
6. method according to claim 5, is characterized in that, the flow of described helium is 1000-3000sccm.
7. method according to claim 2, is characterized in that, described chemical vapor deposition processes is at pressure 3-7Torr, carries out under the condition of power 50-500W.
8. method according to claim 1 and 2, is characterized in that, the thickness of described adhesion layer is 20-100 dust.
9. method according to claim 1, is characterized in that, adopts chemical vapor deposition method or spin coating proceeding to form described barrier layer.
10. method according to claim 1, is characterized in that, the material of described barrier layer is carborundum, the carborundum of the nitrogen that adulterates, silicon oxide carbide or hydrocarbon SiClx.
11. methods according to claim 1, is characterized in that, adopt in-situ deposition technique to form described adhesion layer.
12. methods according to claim 1, is characterized in that, described insulating barrier is the material layer with low-k.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110195551.4A CN102881632B (en) | 2011-07-13 | 2011-07-13 | Manufacturing method of semiconductor device |
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|---|---|---|---|
| CN201110195551.4A CN102881632B (en) | 2011-07-13 | 2011-07-13 | Manufacturing method of semiconductor device |
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| Publication Number | Publication Date |
|---|---|
| CN102881632A CN102881632A (en) | 2013-01-16 |
| CN102881632B true CN102881632B (en) | 2014-12-17 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465491B (en) * | 2013-09-23 | 2018-01-12 | 中芯国际集成电路制造(上海)有限公司 | The forming method of metal interconnecting layer |
| CN105097654B (en) * | 2014-05-08 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and preparation method thereof, electronic device |
| CN110504211A (en) * | 2019-08-29 | 2019-11-26 | 上海华力集成电路制造有限公司 | Improve the process of the mound shape bump defects of top copper interconnection layer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4321284A (en) * | 1979-01-10 | 1982-03-23 | Vlsi Technology Research Association | Manufacturing method for semiconductor device |
| CN1519925A (en) * | 2003-02-04 | 2004-08-11 | 恩益禧电子股份有限公司 | Semiconductor device and manufacturing method thereof |
| CN101252087A (en) * | 2007-02-16 | 2008-08-27 | 东京毅力科创株式会社 | SiCN film formation method and apparatus |
-
2011
- 2011-07-13 CN CN201110195551.4A patent/CN102881632B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4321284A (en) * | 1979-01-10 | 1982-03-23 | Vlsi Technology Research Association | Manufacturing method for semiconductor device |
| CN1519925A (en) * | 2003-02-04 | 2004-08-11 | 恩益禧电子股份有限公司 | Semiconductor device and manufacturing method thereof |
| CN101252087A (en) * | 2007-02-16 | 2008-08-27 | 东京毅力科创株式会社 | SiCN film formation method and apparatus |
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| CN102881632A (en) | 2013-01-16 |
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