CN102842846A - Method for improving laser transmittance of dye Q-switched thin film sheet - Google Patents
Method for improving laser transmittance of dye Q-switched thin film sheet Download PDFInfo
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- CN102842846A CN102842846A CN2011103626174A CN201110362617A CN102842846A CN 102842846 A CN102842846 A CN 102842846A CN 2011103626174 A CN2011103626174 A CN 2011103626174A CN 201110362617 A CN201110362617 A CN 201110362617A CN 102842846 A CN102842846 A CN 102842846A
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- dye
- diaphragm
- thin film
- film sheet
- laser
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000002834 transmittance Methods 0.000 title claims abstract description 16
- 239000010409 thin film Substances 0.000 title abstract 9
- 239000003153 chemical reaction reagent Substances 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 230000007704 transition Effects 0.000 claims description 15
- 238000000465 moulding Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000011161 development Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000011160 research Methods 0.000 abstract description 2
- 238000007493 shaping process Methods 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 4
- 230000002708 enhancing effect Effects 0.000 abstract 2
- 239000000975 dye Substances 0.000 description 20
- 230000000694 effects Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000001914 filtration Methods 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000990 laser dye Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 235000013599 spices Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Abstract
The invention discloses a method for improving a laser transmittance of a dye Q-switched thin film sheet; the method for improving the laser transmittance of the dye Q-switched thin film sheet is characterized in that a laser transmittance enhancing film is plated on the surface of the dye Q-switched thin film sheet; the laser transmittance enhancing film is plated on the upper surface of an inorganic transitional film on the surface of the thin film sheet; the inorganic transitional film is formed by coating a silicon reagent at the moment of beginning to shape and cure the dye Q-switched thin film sheet. Therefore, duration time of shaping and curing the thin film sheet is required, and the aim is realized by adding C2H4Cl2 as an accessory into components of the dye Q-switched thin film sheet. According to the method, the laser transmittance of the dye Q-switched thin film sheet is greatly improved, and a performance is remarkably improved sequentially to adopt to more complex application environments and more strict requirement conditions; the method can develop a great function in multiple fields of social economic development such as military industry, scientific research, education, industry, medical treatment, hairdressing, and a great benefit can be generated.
Description
Technical field
The present invention relates to laser dye and transfer Q diaphragm technology, relate in particular to a kind of method that improves dye Q diaphragm laser transmittance.
Background technology
The laser Q-switching technology comprises tilting mirror Q-regulating technique, acousto-optic Q modulation technology, electric-optically Q-switched technology, dye Q technology etc., and various Q-regulating techniques have different features, are applied in different occasions.Especially the dye Q device has been made diaphragm at present, adapts to lightweight, miniaturization, integrated application scenario more, simultaneously reduce cost, convenient aspect such as integrated has bigger advantage.At present, the dye Q diaphragm product on the market is (the prize-winning title: the E method moulding process of RT-106 dyestuff sheet Q switching that adopts the E method moulding process production that obtains state award for inventions basically; Prize-winning numbering: 06114; The prize-winning time: 1983.1; Prize-winning grade: country's invention fourth class prize).With this process production dye Q diaphragm for many years, in the practical application of military products and civilian goods, brought into play huge effect.The flow process of E method moulding process mainly comprises operations such as batching, stirring, filtration, moulding, typing, detection, still exists some defectives and problem.Because of the diaphragm forming process is that solidify earlier on the surface, and the inner organic solvent of substrate is still volatilizing, so inside very easily forms some microcosmic bubbles, influences the transmitance of laser; Simultaneously, this technological forming process also makes the surface of diaphragm produce the rough phenomenon of microcosmic easily, thereby has strengthened the reflection and the scattering of laser; Consequently laser transmittance reduces, and loss increases, and transfers the effect of Q to have a negative impact to laser.Progress and development of science and technology along with society; Huge variation has taken place in the applied environment of dye Q diaphragm; Exchange the demands for higher performance of Q diaphragm; As under situation such as the condition of high temperature, low-temperature condition, high-speed mobile, quick rotation, work such as the tracking of target, location, range finding, original accent Q diaphragm is inapplicable.Actual requirement improves the performance of transferring the Q diaphragm as early as possible, especially will guarantee feasibility, the reliability and stability of many application of special occasions.And improve dye Q diaphragm laser transmittance is to promote the effective ways of transferring Q diaphragm serviceability, is a basic work, also is the innovative point that at first need break through.
Summary of the invention
The objective of the invention is to overcome the deficiency of prior art and method; A kind of new process is provided; Reach the purpose that improves dye Q diaphragm laser transmittance, realize the effect of the serviceability of lifting dye Q diaphragm, make it adapt to more complicated applied environment; Satisfy harsher demand condition, the bigger effect of performance in the numerous areas of socio-economic development.
For solving above-mentioned technical problem, the present invention reaches through following measure: the characteristic of this technical scheme is to be coated with the laser anti-reflection film on dye Q diaphragm surface; Described laser anti-reflection film is coated on above the inorganic nature transition film on diaphragm surface; Described inorganic nature transition film applies silica reagent and forms when the moulding of dye Q diaphragm begins to solidify; For realizing the even coating of inorganic nature transition film, must prolong the time of diaphragm forming and hardening, this purpose is through in dye Q diaphragm batching, increasing auxiliary material C
2H
4Cl
2Realize.
Compared with prior art, method of the present invention has following beneficial effect:
The laser transmittance of the dye Q diaphragm substrate that prior art is accomplished is up to 94%; The pulse voltage power supply Ping Qu≤70V of laser; The threshold voltage variation of laser is respectively 30V when high temperature (+50 ℃) and low temperature (40 ℃), and the output ratio of Q-switching to free running is 1: 4 to 1: 5; The beneficial effect that the present invention produces is that the laser transmittance amplification of substrate is 3～4%; Transmitance reaches 97～98%; The pulse voltage power supply level ground district broadening of laser is to 90V; The variations in threshold voltage value sum of laser is 30V when high temperature (+50 ℃) and low temperature (40 ℃), and the output ratio of Q-switching to free running is brought up to 1: 2 to 1: 3.
Description of drawings
Fig. 1 is the process flow chart of the inventive method.
Embodiment
Be further described below in conjunction with the work flow of accompanying drawing the inventive method.
1, burden process: keep former major ingredient, the invention is characterized in and added auxiliary material C
2H
4Cl
2The effect of auxiliary material is the curing time that prolongs the diaphragm moulding, and purpose has two: the first keeps applying silica reagent has time enough, guarantees to solidify the back and forms uniform inorganic nature transition film on the diaphragm surface, lays a solid foundation for being coated with the laser anti-reflection film; It two is in long curing time, the inner organic solvent of substrate is thoroughly volatilized, thereby avoid the formation of microcosmic bubble, improves the transmitance of laser.
The material of a batch is following:
Major ingredient:
PMMA——248g；
BDN liquid---365ml;
CH
2Cl
2——425ml；
Nd-911——23.5ml；
Auxiliary material
C
2H
4Cl
2——150ml.
2, agitating procedure: insert special-purpose blender to described major ingredient of burden process and auxiliary material, mixing speed is made as 2 grades, stirs 7 hours, guarantees the abundant mixing of materials.
3, filter operation: the well-mixed spice of agitating procedure is inserted filter, and filtering layer is 3 layers of silk broadcloth filter clothes, pressurization 0.5KPa, filtrating capping.
4, molding procedure: this operation will be accomplished two contents of generation of diaphragm moulding and inorganic nature transition film.
The diaphragm moulding: room temperature, the filtrating of filtering operation is inserted moulding uniform device 3#, following actinal surface height 1mm, support 2#, 3 grades of speed, front-operated;
Transition film forms: and the opportunity that begin solidify molded at diaphragm; Start the transition film coating machine, siliceous chemical reagent is coated on the surface of diaphragm, and 3 times repeatedly; Coated diaphragm is in the process of solidifying; The silicon composition will penetrate into the top layer of diaphragm organic matrix, treat full solidification after, just formed layer of even inorganic nature transition film on the diaphragm surface.
5, shaping process: the surface has been formed the diaphragm of inorganic nature transition film, inserted calibrator,, finalized the design 4 hours 60 ℃ of constant temperature.
6, plating anti-reflection film operation: the diaphragm after will finalizing the design is inserted coating machine, accomplishes being coated with of anti-reflection film.At this moment, the inorganic nature transition film has played crucial effect, and it is combined into one inorganic laser anti-reflection film and organic diaphragm.
7, inspection process: the dye Q diaphragm technical indicator that the present invention accomplishes is:
1. diaphragm substrate laser transmittance: antireflective effect improves 3～4%, and transmitance reaches 97～98%;
2. dye Q diaphragm transmitance scope: 15～80%;
3. operating temperature range: (40 ℃)～(+50 ℃);
4. storage temperature range: (50 ℃)～(+70 ℃);
5. anti-laser emission ability: laser emission intensity 300MW/cm
2
6. the pulse work Ping Qu of laser: under normal temperature, high temperature (+50 ℃) and low temperature (40 ℃), all be not less than 90V;
7. the threshold voltage variation of laser: the changing value sum of high temperature (+50 ℃) and low temperature (40 ℃) is 30V;
8. repetition rate: 1Hz works.
The check that the present invention implements is undertaken by following method:
Use the VSU-2G spectrophotometer, wavelength 1.06 μ m detect the laser antireflective effect of diaphragm substrate and the transmitance scope of dye Q diaphragm;
With high and low temperature test chamber testing temperature, storing temperature;
With YAG laser test appearance, detect pulse work Ping Qu, the threshold voltage variation of laser, the work repetition rate of the anti-laser emission ability of dye Q diaphragm, laser;
The laser transmittance of the dye Q diaphragm of accomplishing with method of the present invention improves a lot; Thereby its serviceability obviously promotes; Can adapt to more complicated applied environment; Satisfy harsher demand condition, in the numerous areas of socio-economic development such as military project, scientific research, teaching, industry, medical treatment, beauty treatment etc. are used, can bring into play bigger effect, produce bigger benefit.
Claims (4)
1. a method that improves dye Q diaphragm laser transmittance is characterized in that being coated with the laser anti-reflection film on dye Q diaphragm surface.
2. be coated with the laser anti-reflection film according to claim 1 is said on dye Q diaphragm surface, it is characterized in that described laser anti-reflection film is to be coated on above the surperficial inorganic nature transition film of diaphragm.
3. laser anti-reflection film according to claim 2 is to be coated on above the surperficial inorganic nature transition film of diaphragm, it is characterized in that described inorganic nature transition film applies silica reagent and forms when the moulding of dye Q diaphragm begins to solidify.
4. inorganic nature transition film according to claim 3 applies silica reagent and forms when the moulding of dye Q diaphragm begins to solidify; It is characterized in that for realizing the even coating of inorganic nature transition film; Must prolong the time of diaphragm forming and hardening, this purpose is through when the dye Q diaphragm is prepared burden, increasing auxiliary material C
2H
4Cl
2Realize.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103626174A CN102842846A (en) | 2011-11-16 | 2011-11-16 | Method for improving laser transmittance of dye Q-switched thin film sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103626174A CN102842846A (en) | 2011-11-16 | 2011-11-16 | Method for improving laser transmittance of dye Q-switched thin film sheet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102842846A true CN102842846A (en) | 2012-12-26 |
Family
ID=47369993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103626174A Withdrawn CN102842846A (en) | 2011-11-16 | 2011-11-16 | Method for improving laser transmittance of dye Q-switched thin film sheet |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102842846A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103730827A (en) * | 2014-01-17 | 2014-04-16 | 天津市激光技术研究所 | Method for reducing laser loss of dye Q-switching sheet surface |
| CN104518421A (en) * | 2014-11-11 | 2015-04-15 | 天津市激光技术研究所 | Dye Q-regulated switch component for single pulse and preparation method of dye Q-regulated switch component |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3997854A (en) * | 1975-12-15 | 1976-12-14 | Hughes Aircraft Company | Passive Q-switch cell |
| WO1986001045A1 (en) * | 1984-07-27 | 1986-02-13 | Selenia, Industrie Elettroniche Associate | Saturable absorber for laser system |
| US5654974A (en) * | 1995-10-11 | 1997-08-05 | Hughes Electronics | Passive Q-switch using multiple saturable absorber materials |
| US5844932A (en) * | 1995-05-12 | 1998-12-01 | Commissariat A L'energie Atomique | Microlaser cavity and externally controlled, passive switching, solid pulsed microlaser |
| CN1311552A (en) * | 2001-03-30 | 2001-09-05 | 中国科学院上海光学精密机械研究所 | Q-switched composite laser cavity plate |
-
2011
- 2011-11-16 CN CN2011103626174A patent/CN102842846A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3997854A (en) * | 1975-12-15 | 1976-12-14 | Hughes Aircraft Company | Passive Q-switch cell |
| WO1986001045A1 (en) * | 1984-07-27 | 1986-02-13 | Selenia, Industrie Elettroniche Associate | Saturable absorber for laser system |
| US5844932A (en) * | 1995-05-12 | 1998-12-01 | Commissariat A L'energie Atomique | Microlaser cavity and externally controlled, passive switching, solid pulsed microlaser |
| US5654974A (en) * | 1995-10-11 | 1997-08-05 | Hughes Electronics | Passive Q-switch using multiple saturable absorber materials |
| CN1311552A (en) * | 2001-03-30 | 2001-09-05 | 中国科学院上海光学精密机械研究所 | Q-switched composite laser cavity plate |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103730827A (en) * | 2014-01-17 | 2014-04-16 | 天津市激光技术研究所 | Method for reducing laser loss of dye Q-switching sheet surface |
| CN104518421A (en) * | 2014-11-11 | 2015-04-15 | 天津市激光技术研究所 | Dye Q-regulated switch component for single pulse and preparation method of dye Q-regulated switch component |
| CN104518421B (en) * | 2014-11-11 | 2018-02-06 | 天津市激光技术研究所 | Pulse dye Q switch module and preparation method thereof |
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| PB01 | Publication | ||
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Application publication date: 20121226 |