CN100596343C - Method for coating fluorescent powder for high-power white light-emitting diode - Google Patents
Method for coating fluorescent powder for high-power white light-emitting diode Download PDFInfo
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- CN100596343C CN100596343C CN200710008981A CN200710008981A CN100596343C CN 100596343 C CN100596343 C CN 100596343C CN 200710008981 A CN200710008981 A CN 200710008981A CN 200710008981 A CN200710008981 A CN 200710008981A CN 100596343 C CN100596343 C CN 100596343C
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- 239000000843 powder Substances 0.000 title claims abstract description 50
- 238000000576 coating method Methods 0.000 title claims abstract description 27
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- 238000000034 method Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 41
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 28
- 239000010935 stainless steel Substances 0.000 claims abstract description 28
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- 239000003292 glue Substances 0.000 claims abstract description 10
- 238000002156 mixing Methods 0.000 claims abstract description 5
- 238000000227 grinding Methods 0.000 claims description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 5
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- 229910052906 cristobalite Inorganic materials 0.000 claims 3
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- 235000012239 silicon dioxide Nutrition 0.000 claims 3
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- 238000007711 solidification Methods 0.000 claims 1
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- 238000003466 welding Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 9
- 229910004298 SiO 2 Inorganic materials 0.000 abstract description 7
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- 229940044658 gallium nitrate Drugs 0.000 description 1
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Inorganic materials [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 1
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Abstract
大功率白光发光二极管的荧光粉涂布方法，涉及一种荧光粉的涂布方法。提供一种荧光粉在芯片上分布均匀，消除光圈的效果较好，LED空间发光色温差明显减小，适合低成本批量生产大功率白光发光二极管的荧光粉新型涂布方法。在二块不锈钢片上分别刻方孔A与B，两方孔中心对齐后粘在一起得模具；倒装芯片焊接到基片上；取硅树脂A和B，称取荧光粉和纳米SiO2，先将硅树脂与荧光粉混合后将SiO2添加其中研磨，混合均匀得粉胶混合物；将模具嵌套在芯片和基片上，使方孔B嵌套基片，方孔A嵌套在芯片四周，将搅拌均匀的粉胶混合物置于模具上表面，利用刮刀匀速刮过，用匀速升降装置取下模具，完成荧光粉涂布；将芯片放入烘箱固化。The invention discloses a phosphor powder coating method for high-power white light emitting diodes, relating to a phosphor powder coating method. The invention provides a novel phosphor powder coating method which is uniformly distributed on the chip, has a good effect of eliminating the aperture, and obviously reduces the color temperature difference of LED space light emission, and is suitable for low-cost mass production of high-power white light emitting diodes. Carve square holes A and B on two stainless steel sheets respectively, align the centers of the two square holes and glue them together to obtain a mold; solder the flip chip to the substrate; take silicone resin A and B, weigh phosphor and nano-SiO 2 , first After mixing the silicone resin with the phosphor powder, add SiO 2 and grind it, and mix it evenly to obtain a powder-glue mixture; nest the mold on the chip and the substrate, so that the square hole B is nested in the substrate, and the square hole A is nested around the chip. Place the evenly stirred powder-glue mixture on the upper surface of the mold, scrape it with a scraper at a constant speed, remove the mold with a uniform-speed lifting device, and complete the phosphor coating; put the chip into an oven for curing.
Description
Technical field
The present invention relates to a kind of coating process of fluorescent material, especially relate to a kind of fluorescent-powder coating method of high-power white light-emitting diode.
Background technology
Light-emitting diode (Lighting Emitting Diod) has life-span length, power and energy saving, reaction speed is fast, reliability is high and advantage (Zhang Guoyi such as Environmental Safety, Chen Zhiguo. the foundation stone of solid-state illumination light source---gallium nitrate based white light-emitting diodes, physics and new and high technology, 2004,34 (11)).Along with the progress of science and technology, the light efficiency of LED is greatly improved, and the white light LEDs application also progressively is developed, and is called the main lighting source of 21 century.In recent years, large power white light LED has obtained develop rapidly, the trend that enters lighting field has been arranged, the whole world a lot of research and production department all actively throws in the research and development ranks of large power white light LED (sweet refined, Feng Hongnian, Jin Shangzhong. Research on property of high-power white LED, optical instrument, 2005,27 (5)).Make in the engineering at traditional small-power white light LEDs, the coating process of fluorescent material mainly is a powder, is about to fluorescent material and used resin, after mixing by a certain percentage, point be coated on the chip and reflector of LED (dragon is happy. light-emitting diode mechanism and technology, electronics and encapsulation, 2004,4 (4)).Because the small-power chip is very little, some powder mode is little to the illumination effect influence; Now LED has developed into high-power, and the coating process of fluorescent material does not but have big improvement.But great power LED is bigger with the chip footprint area, what have reaches 1.00mm * 1.00mm, point powder mode can cause the fluorescent material skewness, as on chip sides and stupefied limit, fluorescent material is less relatively, more relatively at the chip upper surface mid portion, often cause in luminescence process, blue light can be appeared in side and position, stupefied limit, above chip, send the intrinsic colour (Huang of fluorescent material, red, green), will cause LED light in inhomogeneous in spatial distribution like this, colour temperature is inconsistent, phenomenons such as appearance such as Huang circle or blue circle, influence illuminating effect and color rendering (1, Cao X A, Stokes E B, Sandvik P.Optimization ofcurrent spreading metal layer for GaN/InGaN-based light emitting diodes[J] .SolidState Electronics, 2002,46:1235-1239; 2, Guo X, Schubert E F.Current crowding in GaN/InGaN lightemitting diodes on insulating substrates[J] .J.Appl.Phys, 2000,90 (8): 4191-4195).
Japan and some producers of the U.S. utilize electrophoresis now, spraying, methods such as sputter are improved the coating uniformity of fluorescent material, though effect can, the process complexity, cost is too high, little is fit to low-cost batch process.
Summary of the invention
The object of the present invention is to provide a kind of fluorescent material to be evenly distributed on chip, the effect of eliminating aperture is better, and LED space luminescence color temperature difference obviously reduces, and is fit to the low-cost novel coating process of fluorescent material of producing high-power white light-emitting diode in batches.
Technical scheme of the present invention is that the selection wavelength is the blue light flip-chip of 440～470nm, and dimensions is 1.00mm * 1.00mm * 0.10mm; The dimensions of substrate is 2.00mm * 1.50mm * 0.20mm, and the thickness of chip and substrate is all at 0.15～0.35mm, but the different slightly stainless steel substrates of thickness is made mould; Select the fluorescent material a of yellow, red, green 3 kinds of colors, b, c, the halfwidth with emission peak that excites of 3 kinds of fluorescent material is respectively: a powder, EX
a=440-480nm, EM
a=510～560nm; B powder: Ex
b=460～580nm, EM
b=590～690nm; EX
c=400～460nm, EM
c=490～550nm; Select silicones to join glue as fluorescent material, be divided into two kinds of compositions of A/B, refractive index is 1.45, and viscosity is 1200 centipoises (A), and 1000 centipoises (B), condition of cure are 80 ℃ of 30～40min down; Select nanometer SiO
2Powder is as thixotropic agent, and its specific area is 100m
2/ g～300m
2/ g.
Concrete operations step of the present invention is as follows:
1) preparation mould: carve first square hole on first stainless steel substrates, carve second square hole on second stainless steel substrates, with the center-aligned of first square hole and second square hole, then two stainless steel substrates are bonded together, it is stand-by to get mould;
2) utilize the method for reflow soldering that flip-chip is welded on the substrate;
3) get silicone resin A and B, weigh phosphor powder, by quality than fluorescent material: silicone resin A: silicones B=(50～250): 100: 100, take by weighing nanometer SiO
2, press mass ratio SiO
2: silicone resin A: silicones B=(2～20): 100: 100,, to be mixed evenly later on SiO earlier with silicone resin A and silicones B and fluorescent material mixing stirring
2Add wherein, grind the arogel mixture;
4) mould is nested on chip and the substrate, makes the nested substrate of second square hole, play fixation, first square hole is nested in around the chip, and the arogel mixture that stirs is placed the mould upper surface, utilizes scraper at the uniform velocity to scrape, with lowering or hoisting gear mold removal at the uniform velocity, finish the fluorescent material coating;
5) chip that will be coated with fluorescent material is put into curing oven, promptly obtains the uniform phosphor powder layer of thickness.
The specification of first square hole is preferably 1.10mm * (1.10～1.30mm) * 0.30mm.The specification of second square hole is preferably 2.00mm * 1.50mm.Distance between around first square hole and 4 sides of chip equals the thickness that first stainless steel substrates exceeds chip, promptly will obtain the thickness of phosphor powder layer.Described grinding can be adopted cone mill.Temperature of oven is preferably 80 ℃, and the time of curing is preferably 30～40min.
Compare with the method for the some powder of the fluorescent material of existing large power white light LED, prepared its coating of fluorescent material of the present invention is more even, and in luminescence process, aperture is eliminated, and the space color temperature difference obviously reduces, and luminous efficiency improves.Compare with methods such as electrophoresis, spraying and sputters, technology of the present invention is simple, and cost is lower, and luminous efficiency can not reduce simultaneously, is fit to low-cost batch process the in batches.
Description of drawings
The chip structure schematic diagram that Fig. 1 and 2 uses for the embodiment of the invention.
The mould structure schematic diagram that Fig. 3 manufactures and designs for the embodiment of the invention.
Fig. 4 is the nested compound mode schematic diagram of embodiment of the invention mould and chip.
Fig. 5 is the coating effect schematic diagram of the embodiment of the invention.
Embodiment
The invention will be further described below in conjunction with embodiment.
Embodiment 1: referring to Fig. 1～5, at first prepare mould, select stainless steel substrates 3 and 4, the thickness of stainless steel substrates 3 is 0.20mm, carving specification thereon is the square hole 5 of 1.10mm * 1.10mm, and the thickness of stainless steel substrates 4 is 0.15mm, and the specification of the square hole 6 on it is 2.00mm * 1.50mm.Get silicone resin A 10.00g and silicones B 10.00g, take by weighing 5.00g fluorescent material bloom a, fluorescent material bloom a and silicone resin A are mixed stirring 15min with silicones B, the nanometer SiO that evenly takes by weighing later to be mixed
2Powder 0.80g adds wherein, and pours cone mill together into and continue to mix.Mould is nested on chip 1 and the substrate 2, make the square hole 6 nested substrates 2 of 2.00mm * 1.50mm, play fixation, square hole 5 is nested in around the chip 1, around the square hole 5 and the distance 7 between 1 four sides of chip approximate the thickness that stainless steel substrates exceeds chip 1, promptly to obtain the thickness of phosphor powder layer.Add mixed rubber powder mixture at the mould upper surface, utilize the stainless steel scraper at the uniform velocity to scrape, utilize at the uniform velocity lowering or hoisting gear mold removal, coating is finished.Coated chip is put into baking oven, and 80 ℃ of following baking-curing 30min get final product.In that all to be coated with thickness be 0.10mm phosphor powder layer 8 around the chip and on the upper surface, very even like this.The phosphor powder layer 8 that present embodiment obtains is thinner, can obtain the high relatively illumination effect of colour temperature, has eliminated aperture simultaneously, the color temperature distribution unanimity.
It is the blue light flip-chip (referring to Fig. 1) of 440～470nm that chip 1 is selected wavelength, and dimensions is 1.00mm * 1.00mm * 0.10mm; The dimensions of substrate 2 is 2.00mm * 1.50mm * 0.20mm; The thickness of chip 1 and substrate 2 is all at 0.15～0.35mm, and stainless steel substrates 3 is different slightly with 4 thickness.The halfwidth with emission peak that excites of fluorescent material bloom a is respectively: EX
a=440-480nm, EM
a=510～560nm.Select silicones to join glue as fluorescent material, be divided into two kinds of compositions of silicone resin A and silicones B, refractive index is 1.45, and viscosity is respectively 1200 centipoises (A), and 1000 centipoises (B) are selected nanometer SiO
2Powder is as thixotropic agent, and its specific area is 100～300m
2/ g.
Embodiment 2: similar to Example 1, at first prepare mould, and select stainless steel substrates 3 and 4, the thickness of stainless steel substrates 3 is 0.25mm, carving specification thereon is the square hole 5 of 1.15mm * 1.15mm, and the thickness of stainless steel substrates 4 is 0.15mm, and the specification of the square hole 6 on it is 2.00mm * 1.50mm.Get 10.00g silicone resin A and 10.00g silicones B, take by weighing 7.50g fluorescent material bloom a, fluorescent material bloom a and silicone resin A are mixed stirring 20min with silicones B, the nanometer SiO that evenly takes by weighing later to be mixed
2Powder 0.80g adds wherein, and pours cone mill together into and continue to mix.Mould is nested on chip 1 and the substrate 2, make the square hole 6 nested substrates 2 of 2.00mm * 1.50mm, play fixation, square hole 5 is nested in around the chip 1, around the square hole 5 and the distance 7 between 1 four sides of chip approximate the thickness that steel disc exceeds chip, promptly to obtain the thickness of phosphor powder layer.Add mixed rubber powder mixture at the mould upper surface, utilize the stainless steel scraper at the uniform velocity to scrape, utilize at the uniform velocity lowering or hoisting gear mold removal, coating is finished.Coated chip is put into baking oven, and 80 ℃ of following baking-curing 40min get final product.All being coated with the phosphor powder layer 8 that thickness is 0.15mm around the chip and on the upper surface, very even like this.The phosphor powder layer thickness that present embodiment obtains is medium, can obtain the illumination effect of medium colour temperature, has eliminated aperture simultaneously, and color temperature distribution is also consistent.
Embodiment 3: similar to Example 1, at first prepare mould, and select stainless steel substrates 3 and 4, the thickness of stainless steel substrates 3 is 0.30mm, carves the square hole that specification is 1.2mm * 1.2mm thereon.The thickness of stainless steel substrates 4 is 0.15mm, and the square hole specification on it is 2.00mm * 1.50mm.Get 10.00g silicone resin A and 10.00g silicones B, take by weighing 10.00g fluorescent material bloom a, fluorescent material bloom a and silicone resin A are mixed stirring with silicones B glue, treat evenly to take by weighing later nanometer SiO
2Powder 0.80g adds wherein, and pours cone mill together into and continue to mix.Mould is nested on chip 1 and the substrate 2, make the square hole 6 nested substrates 2 of 2.00mm * 1.50mm, play fixation, square hole 5 is nested in around the chip 1, around the square hole 5 and the distance 7 between 1 four sides of chip approximate the thickness that steel disc exceeds chip, promptly to obtain the thickness of phosphor powder layer.Add mixed rubber powder mixture at the mould upper surface, utilize the stainless steel scraper at the uniform velocity to scrape, utilize at the uniform velocity lowering or hoisting gear mold removal, coating is finished.Coated chip is put into baking oven, and 80 ℃ of following baking-curing 35min get final product.All being coated with phosphor powder layer 0.20mm around the chip and on the upper surface, very even like this.The phosphor powder layer thickness that present embodiment obtains is thicker, and the suitable illumination effect that obtains low colour temperature is eliminated aperture simultaneously, makes the color temperature distribution unanimity.
Embodiment 4: similar to Example 1, at first prepare mould, and select stainless steel substrates 3 and 4, the thickness of stainless steel substrates 3 is 0.20mm, carving specification thereon is the square hole 5 of 1.10mm * 1.10mm, and the thickness of stainless steel substrates 4 is 0.15mm, and square hole 6 specifications on it are 2.00mm * 1.50mm.Get 10.00g silicone resin A and 10.00g silicones B, take by weighing the green powder c of 7.00g fluorescent material rouge and powder b and 3.00g fluorescent material,, treat evenly to take by weighing later nanometer SiO fluorescent material rouge and powder b and the green powder c of fluorescent material and silicone resin A and silicones B glue mixing stirring
2Powder 0.80g adds wherein, and pours cone mill together into and continue to mix, and about 10min gets final product.Mould is nested on chip 1 and the substrate 2, make the square hole 6 nested substrates 2 of 2.00mm * 1.50mm, play fixation, square hole 5 is nested in around the chip 1, around the square hole 5 and the distance 7 between 1 four sides of chip approximate the thickness that steel disc exceeds chip, promptly to obtain the thickness of phosphor powder layer.Add mixed rubber powder mixture at the mould upper surface, utilize the stainless steel scraper at the uniform velocity to scrape, utilize at the uniform velocity lowering or hoisting gear mold removal, coating is finished.Coated chip is put into baking oven, and 80 ℃ of following baking-curing 36min get final product.All being coated with the phosphor powder layer 8 that thickness is 0.10mm around the chip and on the upper surface, very even like this.The phosphor powder layer thinner thickness that present embodiment obtains utilizes the fluorescent material of two kinds of colors to allocate simultaneously, and colour temperature can be changed on a large scale; Can eliminate aperture, make the color temperature distribution unanimity.
Present embodiment is selected the fluorescent material of 2 kinds of colors, i.e. the green powder c of fluorescent material rouge and powder b and fluorescent material, and the halfwidth with emission peak that excites of 2 kinds of fluorescent material is respectively: fluorescent material rouge and powder b:Ex
b=460～580nm, EM
b=590～690nm; The green powder c:EX of fluorescent material
c=400～460nm, EM
c=490～550nm.
Claims (7)
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| CN100596343C true CN100596343C (en) | 2010-03-31 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101436628B (en) * | 2007-11-16 | 2012-01-25 | 广州市鸿利光电股份有限公司 | Technological process for coating fluorescent powder of high-power chip |
| CN101752468B (en) * | 2008-12-17 | 2011-05-25 | 四川柏狮光电技术有限公司 | Suspending manufacture process of light emitting diode (LED) fluorescent powder |
| CN102142511A (en) * | 2010-02-01 | 2011-08-03 | 深圳市光峰光电技术有限公司 | Solid-state light source based on optical wavelength conversion and packaging method thereof |
| CN102790159A (en) * | 2011-05-18 | 2012-11-21 | 展晶科技(深圳)有限公司 | Semiconductor light-emitting element packaging structure and manufacturing method thereof |
| CN104241457B (en) * | 2013-06-19 | 2017-10-31 | 深圳市瑞丰光电子股份有限公司 | A kind of fluorescent material painting method of accurate control coated area |
| CN104465957A (en) * | 2013-09-13 | 2015-03-25 | 惠州市大亚湾永昶电子工业有限公司 | Manufacturing method for remote phosphor device |
| CN105655467B (en) * | 2014-11-10 | 2021-02-09 | 深圳市绎立锐光科技开发有限公司 | White light LED device and manufacturing method thereof |
| CN108292692B (en) * | 2015-03-19 | 2021-01-12 | 衡所华威电子有限公司 | Method for manufacturing optical semiconductor device, thermosetting resin composition for the same, and optical semiconductor obtained therefrom |
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| US20040097006A1 (en) * | 2000-10-13 | 2004-05-20 | Lowery Christopher H. | Stenciling phosphor layers on light emitting diodes |
| CN1508888A (en) * | 2002-11-07 | 2004-06-30 | ���µ�����ҵ��ʽ���� | LED lighting source |
| US20050110191A1 (en) * | 2003-11-25 | 2005-05-26 | Lin Jung K. | Package method of phosphoric light emitting diode |
| CN2741196Y (en) * | 2004-09-28 | 2005-11-16 | 业达科技股份有限公司 | Light-emitting diode packaging structure with fluorescent plate |
| CN1909254A (en) * | 2005-08-03 | 2007-02-07 | 刘士龙 | Manufacturing method and structure of a substrate-type white light diode |
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2007
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Patent Citations (5)
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|---|---|---|---|---|
| US20040097006A1 (en) * | 2000-10-13 | 2004-05-20 | Lowery Christopher H. | Stenciling phosphor layers on light emitting diodes |
| CN1508888A (en) * | 2002-11-07 | 2004-06-30 | ���µ�����ҵ��ʽ���� | LED lighting source |
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| CN1909254A (en) * | 2005-08-03 | 2007-02-07 | 刘士龙 | Manufacturing method and structure of a substrate-type white light diode |
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