CN102820221A - Formation method of low-temperature silicon dioxide film - Google Patents
Formation method of low-temperature silicon dioxide film Download PDFInfo
- Publication number
- CN102820221A CN102820221A CN2012102289869A CN201210228986A CN102820221A CN 102820221 A CN102820221 A CN 102820221A CN 2012102289869 A CN2012102289869 A CN 2012102289869A CN 201210228986 A CN201210228986 A CN 201210228986A CN 102820221 A CN102820221 A CN 102820221A
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- Prior art keywords
- low temperature
- silica membrane
- formation method
- temperature silica
- silicon dioxide
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 182
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 30
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 28
- 235000012239 silicon dioxide Nutrition 0.000 title abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 33
- 239000001301 oxygen Substances 0.000 claims abstract description 25
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 25
- 230000008021 deposition Effects 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 238000011065 in-situ storage Methods 0.000 claims abstract description 13
- 238000009832 plasma treatment Methods 0.000 claims abstract description 10
- 239000012528 membrane Substances 0.000 claims description 75
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 5
- 229910018557 Si O Inorganic materials 0.000 abstract description 5
- 239000001257 hydrogen Substances 0.000 abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 5
- 238000001259 photo etching Methods 0.000 abstract description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract description 5
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 4
- -1 oxygen ions Chemical class 0.000 abstract description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 229910008051 Si-OH Inorganic materials 0.000 description 4
- 229910006358 Si—OH Inorganic materials 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000010148 water-pollination Effects 0.000 description 2
- 206010034719 Personality change Diseases 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
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Abstract
The invention discloses a formation method of a low-temperature silicon dioxide film. The formation method includes: depositing the low-temperature silicon dioxide film by the aid of SiH4 and an oxygen source, wherein the deposition temperature is lower than 300 DEG C; and subjecting the low-temperature silicon dioxide film to in-situ plasma treatment by the aid of oxygen-containing gas. The oxygen-containing gas is led into a reaction chamber after low-temperature silicon dioxide film deposition, plasmas are directly generated in the reaction chamber and contain various active oxidic particles such as active oxygen ions, active oxygen atoms and active oxygen molecules, and the active oxidic particles can substitute for hydrogen of a Si-H bond in low-temperature silicon dioxide to turn the Si-H bond into a stable Si-O bond, so that the characteristic that the low-temperature silicon dioxide film property is changed along with change of time is eliminated, the low-temperature silicon dioxide film can be stable, pattern accuracy in a photo-etching technology is improved, and critical dimensional uniformity is enhanced.
Description
Technical field
The present invention relates to integrated circuit and make field, particularly a kind of formation method of low temperature silica membrane.
Background technology
At present, the low temperature silica membrane is widely used in the hard mask layer of photoresistance top.For example; In dual damascene (Dual Damascene) technology of 90nm, 65nm or 45nm; Form through hole (via) and can in through hole, fill bottom anti-reflection layer similar fillers such as (Barc) afterwards; And then through technologies such as photoetching and etching formation groove (Trench), must select low temperature silicon dioxide as the silicon dioxide of hard mask layer this moment, with the character of the retes such as Barc below the too high influence of the depositing temperature of avoiding this hard mask layer.
Said low temperature silicon dioxide is for common silicon dioxide, and common silica membrane adopts normally that more than 400 ℃ temperature deposits, and the low temperature silica membrane normally adopts and deposits less than 300 ℃ temperature.Usually using plasma strengthens chemical vapour deposition (CVD) (PECVD) technology, feeds the silicon source (like SiH
4) and oxygen source (like N
2O) deposition low temperature silica membrane.Yet; Because the depositing temperature during deposition low temperature silica membrane is relatively low; Be generally 50 ~ 300 ℃, cause depositing and contain a large amount of Si-H chemical bonds in the formed silica membrane, and when this low temperature silica membrane is exposed in the atmospheric environment; Si-H is oxidized to Si-OH easily; Si-OH makes this sull have more hydrophily and absorb the steam in the atmosphere easily, so the character of this low temperature silica membrane can gradually change along with the prolongation of time, like thickness, stress, refractive index etc.
Summary of the invention
The present invention provides a kind of formation method of low temperature silica membrane, so that this low temperature silica membrane reaches stable state, thus the accuracy of figure in the raising photoetching process, the uniformity of raising critical size.
For solving the problems of the technologies described above, the formation method of low temperature silica membrane provided by the invention comprises:
S1: utilize SiH
4With oxygen source deposition low temperature silica membrane, depositing temperature is less than 300 ℃;
S2: adopt oxygen-containing gas that said low temperature silica membrane is carried out in-situ plasma treatment.
Optional, in the formation method of described low temperature silica membrane, among the said step S2, oxygen-containing gas is O
2, O
3Or N
2O gas, O
2, O
3Or N
2The flow of O is between 100sccm ~ 50000sccm.
Optional, in the formation method of described low temperature silica membrane, among the said step S2, reaction chamber pressure is between 2Torr ~ 10Torr.
Optional, in the formation method of described low temperature silica membrane, among the said step S2, radio-frequency power is between 50W ~ 1000W.
Optional, in the formation method of described low temperature silica membrane, among the said step S2, the in-situ plasma treatment time is between 20 seconds ~ 120 seconds.
Optional, in the formation method of described low temperature silica membrane, among the said step S1, oxygen source is N
2O gas.
Optional, in the formation method of described low temperature silica membrane, among the said step S1, deposition low temperature silica membrane in the PECVD reaction chamber.
Optional, in the formation method of described low temperature silica membrane, among the said step S1, depositing temperature is between 50 ℃ ~ 250 ℃.
Optional; In the formation method of described low temperature silica membrane, the thickness of said low temperature silica membrane is
Optional, in the formation method of described low temperature silica membrane, said low temperature silica membrane is as hard mask layer.
Compared with prior art; The present invention is after low temperature silica membrane deposition, continues wafer is stayed in the reaction chamber, and oxygen-containing gas is fed in the reaction chamber; In reaction chamber, directly produce plasma (in-situ plasma); This low temperature silica membrane is carried out in-situ plasma treatment,, can replace the hydrogen of the Si-H key in the low temperature silicon dioxide and become stable Si-O key because this plasma contains the various active oxidation particles of many active oxygen ions, oxygen atom, oxygen molecule or the like; Thereby eliminated low temperature silica membrane character along with the time changes and these characteristics of variation; Can make this low temperature silica membrane reach stable state, thereby improve the accuracy of figure in the photoetching process, improve the uniformity of critical size.
Description of drawings
Fig. 1 is the curve synoptic diagram that the thickness of silica membrane changed with the deposition back time;
Fig. 2 is the curve synoptic diagram that the stress of silica membrane changed with the deposition back time;
Fig. 3 is the curve synoptic diagram that the refractive index of silica membrane changed with the deposition back time;
Fig. 4 is the schematic flow sheet of formation method of the low temperature silica membrane of one embodiment of the invention.
Embodiment
In background technology, mention; The character of low temperature silica membrane can gradually change along with the prolongation of time, and through the application inventor's discovery that studies for a long period of time, this is because the depositing temperature during deposition low temperature silica membrane is relatively low; Cause depositing and contain a large amount of Si-H chemical bonds in the formed silica membrane; And when this low temperature silica membrane was exposed in the atmospheric environment, Si-H was oxidized to Si-OH easily, and Si-OH makes this sull have more hydrophily and absorb the steam in the atmosphere easily; Therefore the character of this low temperature silica membrane can gradually change along with the prolongation of time, like thickness, stress, refractive index etc.
Specifically extremely shown in Figure 3 like Fig. 1; Wherein, Fig. 1 is the curve synoptic diagram that the thickness (Thickness) of silica membrane changes with deposition back time (Time after deposition); Fig. 2 is the curve synoptic diagram that the stress (Stress) of silica membrane changes with deposition back time (Time after deposition), and Fig. 3 is the curve synoptic diagram that the refractive index (Refractive Index) of silica membrane changes with deposition back time (Timeafter deposition).Can know that owing to contain more Si-H key in the low temperature silica membrane, the character of film changes along with change of time acutely, especially within preceding 5 hours, the thickness of film, stress and refractive index all have variation largely.
For this reason; The present invention is after low temperature silica membrane deposition; Continuation is stayed wafer in the chamber, and oxygen-containing gas is fed in the reaction chamber, in reaction chamber, directly produces plasma (in-situ plasma); This low temperature silica membrane is carried out in-situ plasma treatment (being surperficial dehydrogenation and Passivation Treatment); Because this plasma contains the various active oxidation particles of many active oxygen ions, oxygen atom, oxygen molecule or the like, can replace the hydrogen of the Si-H key in the low temperature silicon dioxide and become stable Si-O key, thereby make this low temperature silica membrane reach stable state.
Detailed, as shown in Figure 4, the low temperature silica membrane of one embodiment of the invention comprises the steps:
S1: utilize SiH
4With oxygen source deposition low temperature silica membrane;
Among the said step S1, can in the PECVD reaction chamber, deposit the low temperature silica membrane, also can utilize other conventional technologies to form the low temperature silica membrane.In preferred embodiment, depositing temperature is 50 ℃ ~ 250 ℃, utilizes SiH
4As silicon source (silicon source), utilize N
2O gas also can feed nitrogen or argon gas etc. as carrier gas as oxygen source (oxygen source), and sedimentation time is relevant with the thickness of low temperature silica membrane, and those skilled in the art can be known through the limited number of time experiment, repeat no more here.
S2: adopt oxygen-containing gas that said low temperature silica membrane is carried out in-situ plasma treatment;
Among the said step S2, oxygen-containing gas is preferably O
2, O
3Or N
2O gas, the pressure of reaction chamber between 2Torr ~ 10Torr, said O
2Or O
3Or N
2The flow of O is between 100sccm ~ 50000sccm, and radio frequency (RF) power is between 50W ~ 1000W.Certainly; The in-situ plasma treatment time (reaction time) is relevant with the thickness of low temperature silicon dioxide; If the thicker of low temperature silica membrane, correspondingly the time of in-situ plasma treatment increases thereupon, to guarantee all to change the hydrogen of the Si-H key in it into stable Si-O key.In the present embodiment, the thickness of said low temperature silica membrane is that processing time of
in-situ plasma is between 20 seconds ~ 120 seconds.
In sum; The present invention is behind deposition low temperature silica membrane; Oxygen-containing gas is fed in the reaction chamber, this low temperature silica membrane is carried out Cement Composite Treated by Plasma, because this plasma contains the various active oxidation particles of many active oxygen ions, oxygen atom, oxygen molecule or the like; Can replace the hydrogen of the Si-H key in the low temperature silicon dioxide and become stable Si-O key; Thereby these characteristics of having eliminated low temperature silica membrane character to change along with the time and having changed can make this low temperature silica membrane reach stable state, eliminate that low temperature silica membrane character changes in time and the characteristics that change; Thereby the accuracy of figure in the raising photoetching process, the uniformity of raising critical size.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these revise and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these change and modification.
Claims (10)
1. the formation method of a low temperature silica membrane is characterized in that, comprising:
S1: utilize SiH
4With oxygen source deposition low temperature silica membrane, depositing temperature is less than 300 ℃;
S2: adopt oxygen-containing gas that said low temperature silica membrane is carried out in-situ plasma treatment.
2. the formation method of low temperature silica membrane as claimed in claim 1 is characterized in that, among the said step S2, said oxygen-containing gas is O
2, O
3Or N
2O gas, said O
2, O
3Or N
2The flow of O is between 100sccm ~ 50000sccm.
3. the formation method of low temperature silica membrane as claimed in claim 1 is characterized in that, among the said step S2, reaction chamber pressure is between 2Torr ~ 10Torr.
4. the formation method of low temperature silica membrane as claimed in claim 1 is characterized in that among the said step S2, radio-frequency power is between 50W ~ 1000W.
5. the formation method of low temperature silica membrane as claimed in claim 1 is characterized in that, among the said step S2, the in-situ plasma treatment time is between 20 seconds ~ 120 seconds.
6. the formation method of low temperature silica membrane as claimed in claim 1 is characterized in that, among the said step S1, said oxygen source is N
2O gas.
7. the formation method of low temperature silica membrane as claimed in claim 1 is characterized in that, among the said step S1, and deposition low temperature silica membrane in the PECVD reaction chamber.
8. the formation method of low temperature silica membrane as claimed in claim 1 is characterized in that, among the said step S1, depositing temperature is between 50 ℃ ~ 250 ℃.
9. the formation method of low temperature silica membrane as claimed in claim 1; It is characterized in that the thickness of said low temperature silica membrane is between
.
10. the formation method of low temperature silica membrane as claimed in claim 1 is characterized in that, said low temperature silica membrane is as hard mask layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102289869A CN102820221A (en) | 2012-07-03 | 2012-07-03 | Formation method of low-temperature silicon dioxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102289869A CN102820221A (en) | 2012-07-03 | 2012-07-03 | Formation method of low-temperature silicon dioxide film |
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| Publication Number | Publication Date |
|---|---|
| CN102820221A true CN102820221A (en) | 2012-12-12 |
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ID=47304265
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102289869A Pending CN102820221A (en) | 2012-07-03 | 2012-07-03 | Formation method of low-temperature silicon dioxide film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115020221A (en) * | 2022-06-10 | 2022-09-06 | 广东越海集成技术有限公司 | Silicon dioxide and low-temperature preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4572841A (en) * | 1984-12-28 | 1986-02-25 | Rca Corporation | Low temperature method of deposition silicon dioxide |
| US5614270A (en) * | 1996-02-09 | 1997-03-25 | National Science Council | Method of improving electrical characteristics of a liquid phase deposited silicon dioxide film by plasma treatment |
| CN1351760A (en) * | 1999-12-27 | 2002-05-29 | 精工爱普生株式会社 | Manufacture of dielectric film |
| CN1598049A (en) * | 2003-09-18 | 2005-03-23 | 中芯国际集成电路制造(上海)有限公司 | Process for plasma strengthening type chemical vapour phase deposition treatment |
| CN101593689A (en) * | 2008-05-29 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | The formation method and the double mosaic structure manufacture method of photoengraving pattern |
-
2012
- 2012-07-03 CN CN2012102289869A patent/CN102820221A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4572841A (en) * | 1984-12-28 | 1986-02-25 | Rca Corporation | Low temperature method of deposition silicon dioxide |
| US5614270A (en) * | 1996-02-09 | 1997-03-25 | National Science Council | Method of improving electrical characteristics of a liquid phase deposited silicon dioxide film by plasma treatment |
| CN1351760A (en) * | 1999-12-27 | 2002-05-29 | 精工爱普生株式会社 | Manufacture of dielectric film |
| CN1598049A (en) * | 2003-09-18 | 2005-03-23 | 中芯国际集成电路制造(上海)有限公司 | Process for plasma strengthening type chemical vapour phase deposition treatment |
| CN101593689A (en) * | 2008-05-29 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | The formation method and the double mosaic structure manufacture method of photoengraving pattern |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115020221A (en) * | 2022-06-10 | 2022-09-06 | 广东越海集成技术有限公司 | Silicon dioxide and low-temperature preparation method thereof |
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Application publication date: 20121212 |