CN103943561B - A kind of film build method of low dielectric constant films - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000007788 liquid Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 230000008569 process Effects 0.000 claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 8
- 238000001039 wet etching Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 66
- 239000010409 thin film Substances 0.000 claims description 45
- 239000003361 porogen Substances 0.000 claims description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 10
- 239000000376 reactant Substances 0.000 claims description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- KFVPJMZRRXCXAO-UHFFFAOYSA-N [He].[O] Chemical compound [He].[O] KFVPJMZRRXCXAO-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 238000005984 hydrogenation reaction Methods 0.000 claims description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 2
- 230000004907 flux Effects 0.000 description 9
- 230000012010 growth Effects 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000009432 framing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- Microelectronics & Electronic Packaging (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention provides the film build method of a kind of low dielectric constant films, including: form first layer metal layer；First layer metal layer grows etching barrier layer；Etching barrier layer grows low dielectric constant films, wherein introduces the liquid source stable process of more than two steps when growing low dielectric constant films；Low dielectric constant films is carried out ultraviolet curing；Low dielectric constant films deposits mask and carries out chemical wet etching。
Description
Technical field
The present invention relates to field of semiconductor manufacture, it is more particularly related to the film build method of a kind of low dielectric constant films。
Background technology
Below 40 nanometers in copper wiring technique, in order to reduce time delay between line, two-layer interconnects intermetallic dielectric layer and requires there is relatively low dielectric constant, and dielectric constant is more low, and time delay is more little, and device speed is also more fast。The dielectric constant of super low dielectric constant film 40 nanometers conventional is below 2.6。Except relatively low dielectric constant, also to ensure that thin film has higher mechanical performance, including Young's modulus, hardness etc.。Current most common method is to use porogen to adopt the method for PECVD to deposit the thin film of one layer of carbon dope, then passes through UV treatment and drives organic porogen out of thin film, obtains porose carbon dope thin film。Organic substance can be decomposed by ultraviolet radiation, then thin film is departed from gaseous form, form hole, the introducing of hole can reduce dielectric constant, and the density of usual hole is more big, and diameter is more big, the dielectric constant obtained is more little, silicon-carbon bonds in thin film also can be linked by ultraviolet again simultaneously, forms finer and close framing structure, so supports hole。Organic substance porogen content in deposition process directly determines the size of dielectric constant and the hardness of thin film, when thin film porogen content is higher, through ultraviolet irradiation, the density of thin film hole is higher, aperture is relatively big, the dielectric constant obtained the relatively end, but hardness also can decrease, on the contrary, during the porogen content relatively end, the density of the hole of thin film is less, and aperture is less, the dielectric constant obtained is higher, but hardness can be greatly increased。In order to obtain relatively low time delay, it is necessary to ensure relatively low dielectric constant, but thus sacrifice the mechanical performance of thin film, therefore find a kind of ensure that relatively low thin-film dielectric constant while just particularly important compared with the film build method of high-mechanical property again。
The low dielectric constant films that current industry is commonly used mainly includes three steps during the course raw: 1, introduces liquid source reactant and also makes stability of flow at a relatively low flow value；2 one layer of carbon Si oxide of deposition are as cushion (reactant flow is very low)；3 depositions low dielectric constant films (reactant flow is significantly high) containing porogen。This traditional growth pattern from second step to three step process have liquid source flux process from low to high, characteristic due to liquid source flux controller, this process generally to continue the time of about 10S, account for the time ratio of whole thin film deposition between 1/1 to two/5ths, and it is subject to the impact of liquid source flux controller stability, the process that flow rises can produce very big unstability, and property of thin film is made a big impact。
Summary of the invention
The technical problem to be solved is for there is drawbacks described above in prior art, it is provided that a kind of film build method enabling to the more reliable and more stable low dielectric constant films of technique。
In order to realize above-mentioned technical purpose, according to the present invention, it is provided that the film build method of a kind of low dielectric constant films, including performing successively: first step, it is used for forming first layer metal layer；Second step, for growing etching barrier layer on first layer metal layer；Third step, for growing low dielectric constant films on etching barrier layer, wherein introduces the liquid source stable process of more than two steps when growing low dielectric constant films；4th step, for carrying out ultraviolet curing to low dielectric constant films；5th step, deposits mask on low dielectric constant films and carries out chemical wet etching。
Preferably, low dielectric constant films is the carbon dope thin film containing porogen。
Preferably, described third step includes: the first step, carries out the first not good liquor source reactant stable process, wherein makes liquid source predecessor flow into reaction chamber with first flow when being not turned on radio frequency；Second step, when porogen does not flow into reaction cavity and opens radio frequency so that silicon source presoma and oxygen helium containing methyl key participate in reaction, thus growing one layer of carbon Si oxide without porogen as cushion；3rd step, carries out the second not good liquor source reactant stable process, wherein makes liquid source predecessor flow into reaction chamber with second flow when being not turned on radio frequency, and wherein second flow is more than first flow；4th step, opens the radio frequency in reaction cavity, thus the low dielectric constant films that deposition is containing porogen。
Preferably, porogen is the Organic substance comprising carbon and hydrogen, and formation cavity of dissociating and volatilize after uv irradiation。
Preferably, first layer metal layer includes the one in tungsten metal level, copper metal layer and aluminum metal layer。
Preferably, low dielectric constant films carries out ultraviolet curing to include low dielectric constant films is carried out ultraviolet radiation。
Preferably, the time that low dielectric constant films carries out ultraviolet radiation is 20s-500s, low dielectric constant films carries out the temperature of ultraviolet radiation between 300 degree to 480 degree。
The present invention especially can be advantageously applied in 40 nanometers and following copper wiring technique。In advanced copper wiring technique, after forming first layer metal copper, the growth carbon dope thin film containing porogen, then pass through UV treatment to be driven out of by porogen, form the thin film of porous, thus adding other mechanical performances such as hardness of thin film while reducing the dielectric constant of thin film, it is subsequently formed second layer interconnection copper, this reduces two-layer and interconnect intermetallic RC time delay, in turn ensure that the mechanical performance of dielectric layer simultaneously, add the reliability of device。The present invention, by introducing the liquid source predecessor stability of flow process of more than two steps, grows low-k thin；By the method, both having can guarantee that the growth quality of thin film buffer layer, and can filter out again the impact that in thin film, liquid source predecessor causes from low to high so that subsequent deposition process is more stable, the thin film porogen content of generation is higher, and the thin-film dielectric constant obtained is lower。Simultaneously as filtered out liquid source flux uphill process, it is not subjected to the impact of liquid source flux controller stability so that technique is more reliable and more stable。
Accompanying drawing explanation
In conjunction with accompanying drawing, and by with reference to detailed description below, it will more easily the present invention is had more complete understanding and its adjoint advantage and feature is more easily understood, wherein:
Fig. 1 schematically shows the flow chart of the film build method of low dielectric constant films according to the preferred embodiment of the invention。
Fig. 2 schematically shows the schematic diagram after low dielectric constant films in the film build method of low dielectric constant films according to the preferred embodiment of the invention has deposited。
Fig. 3 schematically shows the schematic diagram after two metal layers in the film build method of low dielectric constant films according to the preferred embodiment of the invention is formed。
It should be noted that accompanying drawing is used for illustrating the present invention, and the unrestricted present invention。Note, represent that the accompanying drawing of structure is likely to be not necessarily drawn to scale。Further, in accompanying drawing, same or like element indicates same or like label。
Detailed description of the invention
In order to make present disclosure clearly with understandable, below in conjunction with specific embodiments and the drawings, present disclosure is described in detail。
Present invention is mainly applied to 40 nanometers and following copper wiring technique: in advanced copper wiring technique, after forming first layer metal copper, grow one layer of thin film containing porogen, then pass through UV treatment to be driven out of by porogen, form the thin film of porous, thus other mechanical performances such as hardness adding thin film while reducing the dielectric constant of thin film, it is subsequently formed second layer interconnection copper, this reduces two-layer and interconnect intermetallic RC time delay, in turn ensure that the mechanical performance of dielectric layer simultaneously, add the reliability of device。The content of porogen is directly connected to electrical properties and the hardness etc. of dielectric film, and when dielectric film porogen content is higher, through ultraviolet irradiation, the density of thin film hole is higher, and aperture is relatively big, the dielectric constant obtained the relatively end。Traditional low dielectric constant films is 0 at initial stage of growth liquid source porogen flow, and its actually one layer of carbon Si oxide so grown out, as cushion。Then porogen begins to flow into cavity until arriving setting value, this all stage porogen content in the film is from low to high, the present invention is by the process of increase by one step liquid source predecessor stability of flow after traditional buffer growth is complete, the deposition of subsequent thin film is started again after making liquid source porogen stability of flow, the thin film so obtained is evenly, dielectric constant is lower, and is not subjected to the impact of liquid source flux controller stability, improves device stability。
Specifically, Fig. 1 schematically shows the flow chart of the film build method of low dielectric constant films according to the preferred embodiment of the invention。
As it is shown in figure 1, be formed as example with the ground floor of 40 Nanometer Copper interconnection processes and second layer interconnection metal, the film build method of low dielectric constant films includes according to the preferred embodiment of the invention:
First step S1: form first layer metal layer 1；
First layer metal layer 1 includes but not limited to the interconnection line metal that the integrated circuits such as tungsten, copper, aluminum are conventional。
Specifically, for metallic copper, physical gas-phase deposition (PVD) deposit barrier layer (being generally Ta and TaN) can be first passed through, then pass through the inculating crystal layer 50-150A of copper deposited by physical vapour deposition (PVD), then pass through plating and form first layer metal copper 5000-7000A, then passing through cmp layers of copper to be polished, thickness reduces to 1200A-2000A；
Second step S2: grow etching barrier layer 2 on first layer metal layer 1；
Specifically, growing etching barrier layer (being generally silicon nitride or carborundum or carbonitride of silicium) by plasma enhanced chemical vapor deposition technique (PECVD) on first layer metal layer, its thickness is preferably 200-700A；
Third step S3: grow on etching barrier layer 2 low dielectric constant films 3 (preferably, the carbon dope thin film containing porogen, as shown in Figure 2), introduce the liquid source stable process of more than two steps when depositing thin film；
Specifically, it is possible to by the method for the PECVD growth carbon dope thin film containing porogen the PECVD device of ProducerGT model of AMAT company (equipment of use can be) on etching barrier layer, it is possible to carry out following step:
First silicon slice loading being entered reaction chamber, then begin to flow into the methyl di-ethyl siloxane m-DEOS of 200-700gm and the carrier gas of these predominant gas-helium 1000-2000sccm, the time is 10-30s；This processing procedure is not turned on radio frequency。
And then growth ground floor does not contain the carbon dope thin film of porogen as cushion, main process can be the methyl di-ethyl siloxane m-DEOS flowing into 200-700gm, and liquid source m-DEOS carrier gas-helium 1000-2000sccm, the oxygen of 400-600sccm, open radio frequency, here radio frequency is high frequency 13.56MHZ, and power is 400W to 700W, and the time is 1-3s；The silicon source presoma and the oxygen helium that only contain methyl key in this step participate in reaction, and porogen does not now flow into reaction cavity。Hereafter, it is preferable that after closing the liquid source reactant flowing into cavity, can continuing on radio frequency, the time is between 2-4s；Thus realizing the purification of residue。
And then radio frequency is closed, pass into the methyl di-ethyl siloxane m-DEOS of 2000gm to 4000gm, the porogen C10H16 of 800-2000gm, and the helium of the carrier gas-1000-2000sccm of these main liquid source pre-reaction materials, the oxygen of 150-250sccm, time is 12-20s so that liquid source reactant flow reaches setting value and stable。
And then radio frequency is opened, here radio frequency is high frequency 13.56MHZ, power is 650W to 1000W, pass into the methyl di-ethyl siloxane m-DEOS of 2000gm to 4000gm, the porogen C10H16 of 800-2000gm, and the oxygen of the carrier gas of these main liquid source pre-reaction materials-helium 1000-2000sccm, 150-250sccm, the time is adjusted according to the thickness requirement of deposition；
Add the processes such as gas pumps in cavity after having deposited, silicon chip is set out reaction cavity, completes the deposition of thin film；
The temperature of all above-mentioned growth courses is between 240 degree to 300 degree, and the pressure of equipment cavity is that 5 holders are between 10 holders；
4th step S4: low dielectric constant films is carried out ultraviolet curing；
Thin film carries out ultraviolet curing can include thin film is carried out ultraviolet radiation, the time and intensity of ultraviolet radiation depends on the thickness of the film of deposition, the preferably time of ultraviolet radiation is 20s-500s, different according to thickness make corresponding adjustment, and temperature is preferably between 300 degree to 480 degree。Such as, the general thin film to 2500-5000A, irradiation time is between 150s-400s so that residual predecessor complete reaction。
5th step S5: deposit mask on low dielectric constant films and carry out chemical wet etching。
For example, it is possible to PECVD grows one layer of hard mask (this programme adopt be silicon dioxide and titanium nitride) and is then spin coated onto photoresist and carries out photoetching and etch formation damascene structure in the structure that UV treatment is complete；Deposit barrier layer (is generally Ta and TaN), the inculating crystal layer of deposition copper, then passes through plating and forms second layer metal copper 4 (as shown in Figure 3)。
Actually, the content of porogen is directly connected to electrical properties and the hardness etc. of dielectric film, when dielectric film porogen content is higher, through ultraviolet irradiation, the density of thin film hole is higher, aperture is relatively big, the dielectric constant obtained the relatively end, on the contrary, during the porogen content relatively end, the density of the hole of thin film is less, and aperture is less, and the dielectric constant obtained is higher。The present invention is by introducing the liquid source flux stable process of more than two steps, both can guarantee that the growth quality of thin film buffer layer, the impact that in thin film, liquid source predecessor causes from low to high can be filtered out again, make subsequent deposition process more stable, the thin film porogen content generated is higher, and the thin-film dielectric constant obtained is lower。Simultaneously as filtered out liquid source flux uphill process, it is not subjected to the impact of liquid source flux controller stability so that technique is more reliable and more stable。Improving, by this, the transition region thickness that it is evident that most between cushion and low dielectric constant films to be substantially reduced, for the thin film of 3000A left and right thickness, dielectric constant can reduce to 2.52 from 2.58。
In addition, it should be noted that, unless stated otherwise or point out, otherwise the description such as the term in description " first ", " second ", " the 3rd " is used only for each assembly in differentiation description, element, step etc., rather than is used for logical relation or the ordering relation etc. that represent between each assembly, element, step。
Although it is understood that the present invention discloses as above with preferred embodiment, but above-described embodiment is not limited to the present invention。For any those of ordinary skill in the art, without departing under technical solution of the present invention ambit, all may utilize the technology contents of the disclosure above and technical solution of the present invention is made many possible variations and modification, or be revised as the Equivalent embodiments of equivalent variations。Therefore, every content without departing from technical solution of the present invention, the technical spirit of the foundation present invention, to any simple modification made for any of the above embodiments, equivalent variations and modification, all still falls within the scope of technical solution of the present invention protection。
Claims (6)
1. the film build method of a low dielectric constant films, it is characterised in that include performing successively:
First step, is used for forming first layer metal layer；
Second step, for growing etching barrier layer on first layer metal layer；
Third step, for growing low dielectric constant films on etching barrier layer, wherein introduces the liquid source stable process of more than two steps when growing low dielectric constant films；
4th step, for carrying out ultraviolet curing to low dielectric constant films；
5th step, for depositing mask and carrying out chemical wet etching on low dielectric constant films；
Wherein, described third step includes:
The first step, carries out the first not good liquor source reactant stable process, wherein makes liquid source predecessor flow into reaction chamber with first flow when being not turned on radio frequency；
Second step, when porogen does not flow into reaction cavity and opens radio frequency so that silicon source presoma and oxygen helium containing methyl key participate in reaction, thus growing one layer of carbon Si oxide without porogen as cushion；
3rd step, carries out the second not good liquor source reactant stable process, wherein makes liquid source predecessor flow into reaction chamber with second flow when being not turned on radio frequency, and wherein second flow is more than first flow；
4th step, opens the radio frequency in reaction cavity, thus the low dielectric constant films that deposition is containing porogen。
2. the film build method of low dielectric constant films according to claim 1, it is characterised in that low dielectric constant films is the carbon dope thin film containing porogen。
3. the film build method of low dielectric constant films according to claim 1, it is characterised in that porogen is the Organic substance comprising carbon and hydrogen, and formation cavity of dissociating and volatilize after uv irradiation。
4. the film build method of low dielectric constant films according to claim 1 and 2, it is characterised in that first layer metal layer includes the one in tungsten metal level, copper metal layer and aluminum metal layer。
5. the film build method of low dielectric constant films according to claim 1 and 2, it is characterised in that low dielectric constant films is carried out ultraviolet curing and includes low dielectric constant films is carried out ultraviolet radiation。
6. the film build method of low dielectric constant films according to claim 5, it is characterised in that the time that low dielectric constant films carries out ultraviolet radiation is 20s-500s, carries out the temperature of ultraviolet radiation between 300 degree to 480 degree to low dielectric constant films。
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| CN101226922A (en) * | 2006-01-20 | 2008-07-23 | 国际商业机器公司 | SICOH dielectric and its manufacturing method |
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