CN102810638A - P type doped polymer solar battery and preparation method thereof - Google Patents
P type doped polymer solar battery and preparation method thereof Download PDFInfo
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Abstract
The invention belongs to the field of electrochemistry, in particular discloses a P type doped polymer solar battery. The P type doping polymer solar battery is of a lamellar structure, the lamellar structure sequentially includes an anode substrate, a P type doped layer, an active layer, an electronic buffer layer and a cathode layer. According to the P type doped polymer solar battery disclosed by the invention, the injection efficiency of a hole is increased in such a way that a neutral P type doped material is used as a hole buffer layer; the corrosion of the hole buffer layer on an anode is effectively prevented, and film thickness can be more accurately controlled; and the cost is reduced, and the purpose of increasing the stability and the energy conversion efficiency of the P type doped polymer solar battery is achieved.
Description
Technical field
The present invention relates to electrochemical field, relate in particular to a kind of p type doped polymer solar cell and preparation method thereof.
Background technology
Nineteen eighty-two, Weinberger etc. have studied the photovoltaic character of polyacetylene, and produce first and had solar cell truly, but photoelectric conversion efficiency extremely low (10 at that time
-3%).And then, Glenis etc. have made the solar cell of various polythiophenes, and the problem that all faced at that time is extremely low open circuit voltage and photoelectric conversion efficiency.Up to 1986; C.W.Tang etc. are incorporated into p N-type semiconductor N and n N-type semiconductor N in the double-deck device first; Just making photoelectric current obtain the raising of very big degree, is milestone with this work from then on, and organic p type doped polymer solar cell is flourish.
Sariciftci in 1992 etc. find 2-methoxyl group-5-(2-ethyl-own oxygen base)-1; Exist quick optical to induce the electron transfer phenomenon in 4-benzene second (MEH-PPV) and the compound system; Caused people's very big interest; And in nineteen ninety-five, usefulness MEH-PPV such as Yu mix as active layer with C60 derivative PCBM and have prepared organic polymer bulk heterojunction solar cell.Device is at 20mW/cm
2Under the monochromatic light irradiation of 430nm, energy conversion efficiency is 2.9%.This is first body heterojunction solar cell based on polymeric material and the preparation of PCBM acceptor, and has proposed the notion of inierpeneirating network structure in the composite membrane.So far, the application of body heterojunction structure in p type doped polymer solar cell obtained development rapidly.This structure also becomes organic p type doped polymer solar battery structure that present people generally adopt.
The operation principle of polymer solar battery mainly is divided into four parts: the formation of (1) optical excitation and exciton; (2) diffusion of exciton; (3) division of exciton; (4) transmission of electric charge and collection.At first, conjugated polymer absorbs photon under the incident light irradiation, and electronics transits to lowest unoccupied molecular orbital (LUMO) from polymer highest occupied molecular orbital (HOMO); Form exciton; Exciton is diffused under the effect of internal electric field to body/acceptor and separates into electronics and the hole that moves freely at the interface, and electronics transmits and collected by negative electrode in mutually at acceptor then, and the hole is then through giving the body phase and being collected by anode; Thereby the generation photoelectric current, this has just formed an effective photoelectric conversion process.
Wherein, the transmission of electric charge and collection are directly to have influence on the photoelectric conversion efficiency of last battery, and the collection of electric charge mainly realizes the electrode through being injected into from the electronics of active layer and hole; And resilient coating has just played very important effect, because electron buffer layer generally is metallic compound (like LiF), causes the band curvature between electrode and the active layer easily; The electronics injection barrier is reduced, improve electron injection efficiency easily, and resilient coating general employing the in hole gathers 3; The aqueous solution of 4-ethyl dioxy thiophene (PEDOT) and polyphenyl sulfonate (PSS), this is a kind of acid material that is, and because polymer solar battery generally is as anode with metal semiconductor (like ITO); Spin coating PEDOT solution above that again, therefore, acid solution corrodes ITO easily; Be unfavorable for the stable of solar cell, destroy anode, in addition; The complicated process of preparation of PEDOT, cost is higher, has restricted commercialized development in the future.
Summary of the invention
The object of the present invention is to provide a kind of good stability, energy conversion rate height, and preparation technology's p type doped polymer solar cell simple, with low cost.
Technical scheme of the present invention is following:
A kind of p type doped polymer solar cell; This battery is a layer structure; And this layer structure is followed successively by: anode substrate, p type doped layer, active layer, electron buffer layer, cathode layer, promptly the structure of this battery is followed successively by: anode substrate/p type doped layer/active layer/electron buffer layer/cathode layer.
In this p type doped polymer solar cell, the used material of each functional layer is following,
The conductive anode substrate is indium tin oxide glass (ITO), mix in indium zinc oxide glass (IZO), fluorine doped tin oxide glass (FTO) or the Al-Doped ZnO glass (AZO) any;
The material of said p type doped layer is 2,3,5,6;-tetrafluoro-7,7 ', 8,8 '-four cyanogen dimethyl 1,4-benzoquinone (F4-TCNQ) are doped to 4; 4 ', 4 " three (N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA), 4,4 ', 4 " three (N; N-diphenyl-amino) triphenylamine (NATA), 4,4 ', 4 " three (N-(naphthyl-1-replace)-N-phenyl amino) triphenylamine (1T-NATA), 4,4 '; 4 "-three (N-(naphthyl-2-replaces)-N-phenyl amino) triphenylamine (2T-NATA), CuPc (CuPc), N, N '-(1-naphthyl)-N, N '-diphenyl-4; 4 '-benzidine (NPB) or 1, any dopant mixture formed in 1-two [4-[N, N '-two (p-tolyl) amino] phenyl] cyclohexane (TAPC);
The material of active layer for gather 3-hexyl thiophene (P3HT), gather [2-methoxyl group-5-(3,7. dimethyl octyloxy) phenylenevinylene] (MDMO-PPV) or gather [2-methoxyl group-5-(2 '-vinyl-own oxygen base) gathers the styrene support] (MEH-PPV) respectively with C
60(i.e. the organic substance of 60 carbon atoms) derivative (PCBM) mixes any in the organizator mixture of back; Be P3HT: PCBM, MDMO-PPV: PCBM or MEH-PPV: any in the PCBM mixture; Wherein, P3HT: in the PCBM mixture, the mass ratio of P3HT: PCBM is 1: 0.8-1: 1, and MDMO-PPV: PCBM or MEH-PPV: in the PCBM mixture, the mass ratio of MDMO-PPV: PCBM or MEH-PPV: PCB is 1: 1-1: 4;
The material of electron buffer layer is lithium fluoride (LiF), lithium carbonate (Li
2CO
3), cesium carbonate (Cs
2CO
3), nitrogenize caesium (CsN
3) or cesium fluoride (CsF) in any;
The material of cathode layer is any metal in aluminium (Al), silver (Ag), gold (Au) or the platinum (Pt).
Another object of the present invention is to provide the preparation method of above-mentioned p type doped polymer solar cell, its processing step is following:
S1, with anode substrate successively at liquid detergent, deionized water, acetone; Ethanol; The organic pollution on surface is removed in ultrasonic cleaning in the isopropyl alcohol, cleans up the back it is carried out oxygen plasma treatment; Then power be under the 10-50W oxygen plasma treatment time be 5-15min, perhaps UV-ozone treatment 5-20min;
S2, be the vapor deposition p type doped layer of 5-80nm at the anode surface thickness of anode substrate;
S3, spin coating thickness is the active layer of 80-300nm on p type doped layer surface, subsequent drying;
S4, active layer surface vapor deposition thickness are the electron buffer layer of 0.5-10nm; Then vapor deposition thickness is the cathode layer of 80-300nm on the electron buffer layer surface; Processing step makes said p type doped polymer solar cell after accomplishing.
P type doped polymer solar cell of the present invention through using neutral p type dopant material as the hole resilient coating, more helps the injection in hole, improves the hole injection efficiency; Simultaneously, also effectively avoid the corrosion of hole resilient coating antianode, and can control thickness more accurately, when reducing cost, reached the purpose that improves solar cell stability and energy conversion efficiency.
Description of drawings
Fig. 1 is a p type doped polymer solar battery structure sketch map of the present invention;
Fig. 2 is preparation technology's flow chart of p type doped polymer solar cell of the present invention;
Fig. 3 is the p type doped polymer solar cell of embodiment 1: ITO substrate/F4-TCNQ: 1T-NATA/P3HT: PCBM/LiF/Al and Comparative Examples battery: the current density of ITO substrate/PEDOT: PSS/P3HT: PCBM/LiF/Al and voltage relationship figure; Wherein, curve 1 is the curve of embodiment 1, and curve 2 is the curve of Comparative Examples.
Embodiment
A kind of p type doped polymer solar cell of the present invention; As shown in Figure 1; This battery is a layer structure; And this layer structure is followed successively by: anode substrate 11, p type doped layer 12, active layer 13, electron buffer layer 14, cathode layer 15, promptly the structure of this battery is followed successively by: anode substrate 11/p type doped layer 12/ active layer 13/ electron buffer layer 14/ cathode layer 15.
In this p type doped polymer solar cell, the used material of each functional layer is following,
The conductive anode substrate is indium tin oxide glass (ITO), mix the zinc oxide glass (IZO) of indium, mix the tin oxide glass (FTO) of fluorine or mix in the zinc oxide glass (AZO) of aluminium any;
The material of said p type doped layer is 2,3,5,6;-tetrafluoro-7,7 ', 8,8 '-four cyanogen dimethyl 1,4-benzoquinone (F4-TCNQ) are doped to 4; 4 ', 4 " three (N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA), 4,4 '; 4 "-three (N, N-diphenyl-amino) triphenylamine (NATA), 4,4 '; 4 " three (N-(naphthyl-1-replaces)-N-phenyl amino) triphenylamine (1T-NATA), 4,4 ', 4 " three (N-(naphthyl-2-replaces)-N-phenyl amino) triphenylamine (2T-NATA), CuPc (CuPc), N; N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB) or 1; Any dopant mixture of forming in 1-two [4-[N, N '-two (p-tolyl) amino] phenyl] cyclohexane (TAPC), the material of promptly said p type doped layer is F4-TCNQ: m-MTDATA, F4-TCNQ: NATA, F4-TCNQ: 1T-NATA, F4-TCNQ: 2T-NATA, F4-TCNQ: NPB or F4-TCNQ: any among the TAPC;
The material of active layer for gather 3-hexyl thiophene (P3HT), gather [2-methoxyl group-5-(3,7. dimethyl octyloxy) phenylenevinylene] (MDMO-PPV) or gather [2-methoxyl group-5-(2 '-vinyl-own oxygen base) gathers the styrene support] (MEH-PPV) respectively with C
60Derivative (PCBM) mixes any in the organizator mixture of back; Be P3HT: PCBM, MDMO-PPV: PCBM or MEH-PPV: any in the PCBM mixture; Wherein, P3HT: in the PCBM mixture, the mass ratio of P3HT: PCBM is 1: 0.8-1: 1, and MDMO-PPV: PCBM or MEH-PPV: in the PCBM mixture, the mass ratio of MDMO-PPV: PCBM or MEH-PPV: PCB is 1: 1-1: 4;
The material of electron buffer layer is lithium fluoride (LiF), lithium carbonate (Li
2CO
3), cesium carbonate (Cs
2CO
3), nitrogenize caesium (CsN
3) or cesium fluoride (CsF) in any;
The material of cathode layer is any metal in aluminium (Al), silver (Ag), gold (Au) or the platinum (Pt).
The preparation method of above-mentioned p type doped polymer solar cell, as shown in Figure 2, its processing step is following:
S1, with anode substrate successively at liquid detergent, deionized water, acetone; Ethanol; The organic pollution on surface is removed in ultrasonic cleaning in the isopropyl alcohol, cleans up the back it is carried out oxygen plasma treatment; Then power be under the 10-50W oxygen plasma treatment time be 5-15min, perhaps UV-ozone treatment 5-20min;
S2, be the vapor deposition p type doped layer of 5-80nm at the anode surface thickness of anode substrate;
S3, spin coating thickness is the active layer of 80-300nm on p type doped layer surface, subsequent drying;
S4, active layer surface vapor deposition thickness are the electron buffer layer of 0.5-10nm; Then vapor deposition thickness is the cathode layer of 80-300nm on the electron buffer layer surface; Processing step makes said p type doped polymer solar cell after accomplishing.
Among above-mentioned preparation method's the step S3, the material of active layer is the solution mixed system, and its solvent is one or both mixed solvents in toluene, xylenes, chlorobenzene or the chloroform; The total concentration of every kind of system is controlled at 8-30mg/ml, and the mass ratio of P3HT: PCBM is controlled at 0.8: 1-1: 1 scope; The mass ratio of MDMO-PPV: PCBM or MEH-PPV: PCBM is controlled at 1: 1-1: 4 scope; In being full of the glove box of inert gas, carry out spin coating then, at the 50-200 ℃ of 5-100min that anneals down, perhaps at room temperature place 24-48h at last, THICKNESS CONTROL is at 80-300nm; Preferred total concentration is the P3HT of 10mg/ml: PCBM chlorobenzene solution system, and the mass ratio of preferred P3HT: PCBM is 1: 1, preferred 70 ℃ of 5min that anneal down, thickness is 100nm.
P type doped polymer solar cell of the present invention through replacing PEDOT as the hole resilient coating with p type dopant material, is prepared in the anode conducting substrate with the method for vapor deposition, and the p type material is neutrality; Can effectively avoid the corrosion of hole resilient coating antianode, simultaneously, the method for vapor deposition can better be controlled thickness; Accuracy can reach 1nm, and, through the material of overdoping; Improved the mobility in hole, more favourable to the injection in hole, effectively raise the stability and the energy conversion efficiency of device; And therefore the cost of p type material, helps the industrialization production of following organic solar batteries than low many of the cost of synthetic polymer.
Do further explain in the face of preferred embodiment of the present invention down.
Embodiment 1
The structure of p type doped polymer solar cell is in the present embodiment:
ITO substrate/F4-TCNQ: 1T-NATA/P3HT: PCBM/LiF/Al.
The preparation technology of this p type doped polymer solar cell is following:
1, liquid detergent, deionized water, acetone are used in the ITO substrate successively; Ethanol, isopropyl alcohol clean, and each ultrasonic 15min when cleaning; Remove the organic pollution of glass surface, the ITO layer to the ITO substrate after cleaning up is oxygen plasma surface treatment 5min under the 50W condition in power;
2, vapor deposition one layer thickness is the p type doped layer of 40nm on the ITO surface of ITO substrate, is doped among the 1T-NATA with F4-TCNQ, i.e. F4-TCNQ: 1T-NATA; The doping ratio of F4-TCNQ is 2%;
3, with P3HT: PCBM chlorobenzene solution system is spin-coated on p type doped layer surface, after spin coating is intact, at 70 ℃ of 15min that anneal down, makes the active layer that thickness is 100nm; Wherein, be P3HT: in the PCBM chlorobenzene solution system, solvent is a chlorobenzene, and the total concentration of P3HT and PCBM is 10mg/ml, and the mass ratio of P3HT: PCBM is 1: 1;
4, through evaporation process, the vapor deposition electron buffer layer on the active layer surface, material is LiF, thickness is 1nm;
5, the vapor deposition cathode layer on the active layer surface, material is Al, thickness is 150nm;
Above-mentioned preparation technology obtains required p type doped polymer solar cell after accomplishing.
Accompanying drawing 3 is that (structure is: ITO substrate/F4-TCNQ: 1T-NATA/P3HT: PCBM/LiF/Al) (structure is: ITO substrate/PEDOT: PSS/P3HT: current density PCBM/LiF/Al) and voltage relationship with the Comparative Examples battery for the preparation p type doped polymer solar cell of embodiment 1; Wherein, curve 1 is the curve of embodiment 1, and curve 2 is the curve of Comparative Examples.
The test of above-mentioned current density and voltage, the model that adopts U.S. Keithly company to generate is that 2602 current-voltage testers carry out, test technology is: the filter set cooperation with 500W xenon lamp (Osram) and AM 1.5 is the white light source of simulated solar irradiation.
Can see that from Fig. 3 the current density of Comparative Examples solar cell is 5.69mA/cm
2, and the current density of the solar cell of p type doped layer has been brought up to 9.62mA/cm among the embodiment 1
2This explanation; Solar cell after mixing, the injection efficiency in hole is improved, and has more hole to be injected into electrode; Thereby collected by electrode; Finally make the energy conversion efficiency of solar cell obtain enhancing, the energy conversion efficiency of Comparative Examples solar cell is 1.79%, and the energy conversion efficiency of the solar cell of embodiment 1 is 1.55%.
The photoelectric current test data of table 1: embodiment 1 and Comparative Examples
Table 1
| Current density (mA cm -2) | Voltage (V) | Efficient (%) | Fill factor, curve factor | |
| Curve 1 | 9.62 | 0.65 | 1.79 | 0.29 |
| |
5.69 | 0.61 | 1.55 | 0.44 |
The structure of p type doped polymer solar cell is in the present embodiment:
AZO substrate/F4-TCNQ: NATA/MDMO-PPV: PCBM/Cs
2CO
3/ Pt.
The preparation technology of this p type doped polymer solar cell is following:
1, liquid detergent, deionized water, acetone are used in the AZO substrate successively; Ethanol, isopropyl alcohol clean, and each ultrasonic 15min when cleaning; Remove the organic pollution of glass surface, the AZO layer to the AZO substrate after cleaning up is oxygen plasma surface treatment 15min under the 10W condition in power;
2, vapor deposition one layer thickness is the p type doped layer of 80nm on the AZO surface of AZO substrate, is doped among the NATA with F4-TCNQ, i.e. F4-TCNQ: NATA; The doping ratio of F4-TCNQ is 0.5%;
3, with MDMO-PPV: PCBM toluene solution system is spin-coated on p type doped layer surface, after spin coating is intact, at 70 ℃ of 5min that anneal down, makes the active layer that thickness is 300nm; Wherein, be MDMO-PPV: in the PCBM toluene solution system, solvent is a toluene, and the total concentration of MDMO-PPV and PCBM is 8mg/ml, and the mass ratio of MDMO-PPV: PCBM is 1: 4;
4, through evaporation process, the vapor deposition electron buffer layer on the active layer surface, material is Cs
2CO
3, thickness is 0.5nm;
5, the vapor deposition cathode layer on the active layer surface, material is Pt, thickness is 300nm;
Above-mentioned preparation technology obtains required p type doped polymer solar cell after accomplishing.
Embodiment 3
The structure of p type doped polymer solar cell is in the present embodiment:
IZO substrate/F4-TCNQ: m-MTDATA/P3HT: PCBM/CsF/Au.
The preparation technology of this p type doped polymer solar cell is following:
1, liquid detergent, deionized water, acetone are used in the IZO substrate successively; Ethanol, isopropyl alcohol clean, and each ultrasonic 15min when cleaning; Remove the organic pollution of glass surface, the IZO layer to the IZO substrate after cleaning up is oxygen plasma surface treatment 10min under the 50W condition in power;
2, vapor deposition one layer thickness is the p type doped layer of 5nm on the IZO surface of IZO substrate, is doped among the m-MTDATA with F4-TCNQ, i.e. F4-TCNQ: m-MTDATA; The doping ratio of F4-TCNQ is 10%;
3, with MEH-PPV: PCBM chlorobenzene/toluene solution system is spin-coated on p type doped layer surface, after spin coating is intact, at 70 ℃ of 5min that anneal down, makes the active layer that thickness is 100nm; Wherein, be MEH-PPV: in PCBM chlorobenzene/toluene solution system, solvent is chlorobenzene/toluene mixed solvent, and the total concentration of MEH-PPV and PCBM is 30mg/ml, and the mass ratio of MEH-PPV: PCBM is 1: 1;
4, through evaporation process, the vapor deposition electron buffer layer on the active layer surface, material is CsF, thickness is 10nm;
5, the vapor deposition cathode layer on the active layer surface, material is Au, thickness is 80nm;
Above-mentioned preparation technology obtains required p type doped polymer solar cell after accomplishing.
Embodiment 4
The structure of p type doped polymer solar cell is in the present embodiment:
FTO substrate/F4-TCNQ: 2T-NATA/P3HT: PCBM/CsN
3/ Al.
The preparation technology of this p type doped polymer solar cell is following:
1, liquid detergent is used in the FTO substrate successively, deionized water, acetone, ethanol, isopropyl alcohol clean, and each ultrasonic 15min when cleaning, and remove the organic pollution of glass surface, clean up the FTO layer UV-ozone surface treatment 15min of back to the FTO substrate;
2, vapor deposition one layer thickness is the p type doped layer of 20nm on the FTO surface of FTO substrate, is doped among the 2T-NATA with F4-TCNQ, i.e. F4-TCNQ: 2T-NATA; The doping ratio of F4-TCNQ is 2%;
3, with P3HT: PCBM chloroformic solution system is spin-coated on p type doped layer surface, after spin coating is intact, at 200 ℃ of 5min that anneal down, makes the active layer that thickness is 80nm; Wherein, be P3HT: in the PCBM chloroformic solution system, solvent is a chloroform, and the total concentration of P3HT and PCBM is 8mg/ml, and the mass ratio of P3HT: PCBM is 1: 0.8;
4, through evaporation process, the vapor deposition electron buffer layer on the active layer surface, material is CsN
3, thickness is 5nm;
5, the vapor deposition cathode layer on the active layer surface, material is Pt, thickness is 300nm;
Above-mentioned preparation technology obtains required p type doped polymer solar cell after accomplishing.
Embodiment 5
The structure of p type doped polymer solar cell is in the present embodiment:
ITO substrate/F4-TCNQ: NPB/P3HT: PCBM/LiF/Al.
The preparation technology of this p type doped polymer solar cell is following:
1, liquid detergent is used in the ITO substrate successively, deionized water, acetone, ethanol, isopropyl alcohol clean, and each ultrasonic 15min when cleaning, and remove the organic pollution of glass surface, clean up the ITO layer UV-ozone surface treatment 20min of back to the ITO substrate;
2, vapor deposition one layer thickness is the p type doped layer of 40nm on the ITO surface of ITO substrate, is doped among the NPB with F4-TCNQ, i.e. F4-TCNQ: NPB; The doping ratio of F4-TCNQ is 5%;
3, with P3HT: PCBM xylene solution system is spin-coated on p type doped layer surface, after spin coating is intact, at room temperature places 48h, makes the active layer that thickness is 120nm; Wherein, be P3HT: in the PCBM xylene solution system, solvent is an xylenes, and the total concentration of P3HT and PCBM is 16mg/ml, and the mass ratio of P3HT: PCBM is 1: 1;
4, through evaporation process, the vapor deposition electron buffer layer on the active layer surface, material is LiF, thickness is 0.5nm;
5, the vapor deposition cathode layer on the active layer surface, material is Al, thickness is 100nm;
Above-mentioned preparation technology obtains required p type doped polymer solar cell after accomplishing.
The structure of p type doped polymer solar cell is in the present embodiment:
AZO substrate/F4-TCNQ: TAPC/MDMO-PPV: PCBM/Li
2CO
3/ Ag.
The preparation technology of this p type doped polymer solar cell is following:
1, liquid detergent is used in the AZO substrate successively, deionized water, acetone, ethanol, isopropyl alcohol clean, and each ultrasonic 15min when cleaning, and remove the organic pollution of glass surface, clean up the AZO layer UV-ozone surface treatment 5min of back to the AZO substrate;
2, vapor deposition one layer thickness is the p type doped layer of 80nm on the AZO surface of AZO substrate, is doped among the TAPC with F4-TCNQ, i.e. F4-TCNQ: TAPC; The doping ratio of F4-TCNQ is 8%;
3, with MDMO-PPV: PCBM xylene solution system is spin-coated on p type doped layer surface, after spin coating is intact, at room temperature places 24h, makes the active layer that thickness is 180nm; Wherein, be MDMO-PPV: in the PCBM xylene solution system, solvent is an xylenes, and the total concentration of MDMO-PPV and PCBM is 24mg/ml, and the mass ratio of MDMO-PPV: PCBM is 1: 2;
4, through evaporation process, the vapor deposition electron buffer layer on the active layer surface, material is Li
2CO
3, thickness is 3nm;
5, the vapor deposition cathode layer on the active layer surface, material is Ag, thickness is 200nm;
Above-mentioned preparation technology obtains required p type doped polymer solar cell after accomplishing.
Should be understood that above-mentioned statement to preferred embodiment of the present invention is comparatively detailed, can not therefore think the restriction to scope of patent protection of the present invention, scope of patent protection of the present invention should be as the criterion with accompanying claims.
Claims (10)
1. p type doped polymer solar cell, this battery is a layer structure, it is characterized in that, this layer structure is followed successively by: anode substrate, p type doped layer, active layer, electron buffer layer, cathode layer.
2. p type doped polymer solar cell according to claim 1 is characterized in that, said anode substrate is indium tin oxide glass, mix in indium zinc oxide glass, fluorine doped tin oxide glass or the Al-Doped ZnO glass any.
3. p type doped polymer solar cell according to claim 1 is characterized in that the material of said p type doped layer is 2,3; 5,6 ,-tetrafluoro-7,7 '; 8,8 '-four cyanogen dimethyl 1,4-benzoquinone are doped to 4,4 ', 4 " three (N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine, 4; 4 ', 4 " three (N, N-diphenyl-amino) triphenylamine, 4,4 '; 4 " three (N-(naphthyl-1-replaces)-N-phenyl amino) triphenylamine, 4,4 ', 4 " three (N-(naphthyl-2-replaces)-N-phenyl amino) triphenylamine, CuPc, N, N '-(1-naphthyl)-N; N '-diphenyl-4,4 '-benzidine or 1, any dopant mixture formed in 1-two [4-[N, N '-two (p-tolyl) amino] phenyl] cyclohexane.
4. p type doped polymer solar cell according to claim 3 is characterized in that, in the said dopant mixture, and 2,3,5,6 ,-tetrafluoro-7,7 ', the doping mass percent of 8,8 '-four cyanogen dimethyl 1,4-benzoquinone is 0.5-10%.
5. p type doped polymer solar cell according to claim 1; It is characterized in that; The material of said active layer for gather the 3-hexyl thiophene, gather [2-methoxyl group-5-(3,7. dimethyl octyloxy) phenylenevinylene] or gather [2-methoxyl group-5-(2 '-vinyl-own oxygen base) gathers the styrene support] respectively with C
60Derivative forms any in the mixture.
6. p type doped polymer solar cell according to claim 5 is characterized in that, said 3-hexyl thiophene and the C of gathering
60Derivative forms in the mixture, gathers 3-hexyl thiophene and C
60The mass ratio of derivative is 1: 0.8-1: 1;
Said gathering [2-methoxyl group-5-(3,7. dimethyl octyloxy) phenylenevinylene] and C
60Derivative forms in the mixture, gathers [2-methoxyl group-5-(3,7. dimethyl octyloxy) phenylenevinylene] and C
60The mass ratio of derivative is 1: 1-1: 4;
Said gathering [2-methoxyl group-5-(2 '-vinyl-own oxygen base) gather the styrene support] and C
60Derivative forms in the mixture, gather [2-methoxyl group-5-(2 '-vinyl-own oxygen base) gather the styrene support] and C
60The mass ratio of derivative is 1: 1-1: 4.
7. p type doped polymer solar cell according to claim 1 is characterized in that the material of said electron buffer layer is any in lithium fluoride, lithium carbonate, cesium carbonate, nitrogenize caesium or the cesium fluoride.
8. p type doped polymer solar cell according to claim 1 is characterized in that the material of said cathode layer is any metal in aluminium, silver, gold or the platinum.
9. the preparation method of the arbitrary said p type doped polymer solar cell of claim 1 to 8 is characterized in that this preparation method comprises the steps:
S1, antianode substrate surface carry out clean, dry back is subsequent use;
S2, on the anode layer of anode substrate surface vapor deposition p type doped layer;
S3, on p type doped layer surface the spin coating active layer, subsequent drying;
S4, active layer surface vapor deposition electron buffer layer; Then at the surperficial vapor deposition cathode layer of electron buffer layer; After intact, make said p type doped polymer solar cell.
10. preparation method according to claim 9 is characterized in that, the clean among the said step S1 comprises:
S11, with anode substrate successively at liquid detergent, deionized water, acetone, ethanol, ultrasonic cleaning in the isopropyl alcohol;
S12, carry out oxygen plasma or UV-ozone treatment at the anode surface of anode substrate.
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| CN104253167A (en) * | 2013-06-27 | 2014-12-31 | 海洋王照明科技股份有限公司 | Solar cell device and production method thereof |
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| CN111341915A (en) * | 2020-05-19 | 2020-06-26 | 季华实验室 | Method for manufacturing organic crystal solar cell device and photoelectric equipment |
| CN113410395A (en) * | 2021-05-19 | 2021-09-17 | 华南理工大学 | Organic photoelectric material of alkyl diamine organic matter doped PEDOT (Poly ethylene glycol Ether-butyl ether)/PSS (Poly styrene), preparation and application |
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