CN102810630A - Anisotropy adjustable magnetic film structure, magnetic sensor and preparation method - Google Patents

Abstract

A GMR or TMR magnetic nano multilayer thin film structure, magnetic sensor and preparation method, the magnetic nano multilayer thin film structure sequentially includes a substrate and a buffer layer thereon, a reference magnetic layer, an intermediate layer, a detection magnetic layer and a cover layer , wherein the reference magnetic layer utilizes the perpendicular anisotropy induced by the ferromagnetic layer/nonmagnetic layer interface, by adjusting the thickness of the ferromagnetic layer in the reference magnetic layer so that its easy magnetization direction is in-plane, set as the XY direction, or perpendicular to the film face, set to the Z direction. The present invention utilizes the perpendicular anisotropy induced by the ferromagnetic layer/non-magnetic layer interface to modulate the magnetic anisotropy of the reference magnetic layer, and obtains a reference layer whose axis of easy magnetization is perpendicular to the film plane at the thinner ferromagnetic layer, and where the ferromagnetic layer is thinner The thick part obtains the reference layer with the easy magnetization axis in the plane, and then uses the pinning structure and induced magnetic field growth to realize the modulation of the magnetic anisotropy of the reference magnetic layer and the detection magnetic layer in three-dimensional space. Simple, thermally stable and consistent.

Description

Anisotropy adjustable magnetic film structure, magnetic sensor and preparation method

technical field

The invention belongs to the field of spintronics materials and magnetosensitive sensors. Specifically, the invention relates to a functional nanometer magnetic sensor based on the effects of giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR). The structure of the layer film, its application in the magnetosensitive detector, especially the three-dimensional magnetosensitive detector, and the corresponding preparation method.

Background technique

Magnetic detectors are widely used in various fields such as positioning, angle detection, speed detection, acceleration measurement, force measurement and other non-destructive detection and magnetic storage. According to different measurement principles, magnetosensitive detectors can be divided into: magnetosensitive detectors based on the Hall effect of semiconductor materials, magnetosensitive detectors based on anisotropic magnetoresistance (AMR) effects, and magnetosensitive detectors based on giant magnetoresistance Effect (GMR) and tunneling magnetoresistance (TMR) magnetosensitive detectors, etc. Among them, magnetosensitive detectors based on the GMR effect and the TMR effect have a wide range of uses due to their high sensitivity, low power consumption, and production processes compatible with conventional semiconductor processes.

In order to detect the magnetic field distribution in three-dimensional space, there are usually two technical schemes: the first scheme requires three independent one-dimensional magnetosensitive detectors whose easy magnetization axes are in the plane and whose spatial distribution is perpendicular to each other to measure the three-dimensional space X, Y and Z The three directions are detected separately; in the second scheme, two independent magnetosensitive detectors with easy magnetization axes in the plane and the spatial distribution are perpendicular to each other are used to detect the magnetic field in the X and Y directions respectively, and an alloy with perpendicular magnetic anisotropy is used in the Z direction Or magnetic multilayer films, such as magnetosensitive detectors composed of FePt, [Co/Pt]n, etc., so as to realize in-plane integration [Qin Qihang et al. China Invention Patent Authorization Announcement No. 100593112C]. However, both of the above two schemes have shortcomings: the first scheme is limited by the vertical space layout of the one-dimensional magnetic sensor with three easy magnetization axes in the plane, and the integration degree is low; the second scheme uses alloy and multilayer thin film structure to increase The preparation process is difficult and the thermal stability and consistency of multi-layer films such as FePt and [Co/Pt]n are poor.

Contents of the invention

The technical problem to be solved by the present invention is to provide a GMR or TMR magnetic nano-multilayer thin film structure, a new magnetic sensor and a preparation method to solve the problem of the complicated preparation process of the magnetic sensor in the prior art, especially the three-dimensional space magnetic field detector. and poor consistency defects.

In order to achieve the above object, the present invention provides a GMR or TMR magnetic nano-multilayer film structure whose magnetic anisotropy can be modulated in three-dimensional space, including: a substrate (Sub) and a buffer layer (BufferLayer, BL) thereon, Reference magnetic layer (Reference Layer, RL), intermediate layer (Space), detection magnetic layer (Free Layer) and cover layer (Capping Layer); said reference magnetic layer and detection magnetic layer utilize ferromagnetic layer/non-magnetic layer interface Induced perpendicular anisotropy, by adjusting the thickness of the ferromagnetic layer in the reference magnetic layer and the detection magnetic layer, the easy magnetization direction is in-plane (set as XY direction), or perpendicular to the film plane (set as Z direction).

Among them, when the easy magnetization direction is in the plane, the orientation of the easy magnetization axis in the plane is modulated by the way of pinning structure or induced magnetic field growth.

Wherein, the coercive force Hc ₁ of the reference magnetic layer is greater than the coercive force Hc ₂ of the detection magnetic layer.

Wherein, the intermediate layer is a non-magnetic metal layer or an insulating barrier layer, wherein, corresponding to the GMR magnetic nano-multilayer thin film structure, the intermediate layer is a non-magnetic metal layer, corresponding to the TMR magnetic nano-multi-layer thin film structure, and the intermediate layer is an insulating barrier layer.

Wherein, the reference magnetic layer and the detection magnetic layer can be composed of a single ferromagnetic layer (FM), or can be directly or indirectly composed of a ferromagnetic layer, an antiferromagnetic layer (AFM) and a nonmagnetic metal layer (NM). Pinning structure; the direct pinning means that the antiferromagnetic material layer directly contacts the FM/AFM with the ferromagnetic layer, and the indirect pinning means inserting a very thin layer between the antiferromagnetic material layer and the ferromagnetic layer. Thin non-magnetic metal layer FM/NM/AFM or insert composite layer FM1/NM/FM11/AFM, the structure of the magnetic nano multilayer film is as follows:

Sub/BL/AFM1/FM11/NM1/FM1/Space/FM2/NM2/FM22/AFM2/CL;

or Sub/BL/AFM1/NM1/FM1/Space/FM2/NM2/FM2/AFM2/CL;

or Sub/BL/AFM1/FM1/Space/FM2/NM2/FM22/AFM2/CL;

or Sub/BL/AFM1/NM1/FM1/Space/FM2/NM2/AFM2/CL;

or Sub/BL/AFM1/FM1/Space/FM2/NM2/AFM2/CL;

or Sub/BL/AFM1/FM1/Space/FM2/AFM2/CL

or Sub/BL/AFM1/FM11/NM/FM1/Speace/FM2/CL

or Sub/BL/AFM1/NM1/FM1/Speace/FM2/CL

Or Sub/BL/AFM1/FM1/Speace/FM2/CL.

Wherein, the material of the ferromagnetic layer is preferably Co, Fe, Ni or a ferromagnetic metal alloy material, or a semi-metal material, and the thickness varies from 0.2 to 10 nm according to the required magnetic anisotropy.

Wherein, the ferromagnetic metal alloy thin film is preferably CoFe, CoFeB, NiFeCr or NiFe, and the semi-metal material is preferably CoFeAl, CoMnAl, CoMnGe or CoMnGa.

Wherein, the antiferromagnetic material is preferably PtMn, IrMn, FeMn, NiMn, or selected from oxides with antiferromagnetism, the oxide with antiferromagnetism is preferably CoO or NiO, and the PtMn, IrMn, FeMn and The thickness of NiMn is 3-30nm, and the thickness of the antiferromagnetic oxide is 5-50nm.

Wherein, the non-magnetic metal layer is preferably Cu, Cr, V, Nb, Mo, Ru, Pd, Ta, W, Pt, Ag, Au or alloys thereof, with a thickness of 0.2-10 nm.

Among them, when the intermediate layer is a potential barrier, AlO _x (0<x<3/2), MgO, Mg _1-x Zn _x O (0<x<1), Mg _x Al _{2/3 (1 -x)} O (0<x<1), AlN, Ta ₂ O ₅ , ZnO, HfO ₂ , TiO ₂ inorganic oxides, with a thickness of 0.5-5 nm; when the intermediate layer is a non-magnetic metal, it is preferably Cu, Cr, V, Nb, Mo, Ru, Pd, Ta, W, Pt, Ag, Au metal materials, the thickness is 0.2-10nm.

Wherein, the buffer layer is a metal material with high resistance and in close contact with the substrate, and the thickness of the buffer layer is 3-30 nm.

Wherein, the buffer layer is preferably Ta, Ru, Cr, Pt, or a multilayer film structure of the above metals.

Wherein, the covering layer is a metal layer that is not easy to be oxidized and corroded and has good conductivity, and is used to protect the structure from being oxidized and corroded. The structure of the covering layer is Ta, Cu, Al, Ru, Au, Ag, Pt is a single-layer thin film of the above metal, or a multi-layer thin film of the above metal, and the thickness of the covering layer is 2-100 nm.

Wherein, the substrate is an inorganic substrate such as a glass substrate, a Si substrate, a Si/ _SiO substrate, or a SiC substrate, or it is polyethylene, polypropylene, polystyrene, or terephthalate , polyimide, polycarbonate organic flexible substrate, the thickness of the substrate is 0.3-1mm.

Moreover, the present invention proposes a magnetic sensor prepared based on the above-mentioned magnetic nano-multilayer film structure.

Wherein, the magnetic sensitive sensor is an in-plane integrated three-dimensional space magnetic sensor, and the in-plane integrated three-dimensional space magnetic sensor includes three independent magnetic sensitive detector units at different positions on the same substrate, and the The magnetosensitive detector unit is prepared by adopting the magnetic nanometer multi-layer thin film structure described in claim 1.

Among them, when there is no external magnetic field, the direction of the magnetic moment of the reference layer of each magnetosensitive detector unit is perpendicular to the direction of the magnetic moment of the detection layer; The direction of the easy magnetization axis of the reference layer of the unit is perpendicular to the film surface (set as the Z direction), and the directions of the easy magnetization axes of the reference layers of the other two magnetosensitive detector units are parallel to the film surface and perpendicular to each other (set as the X and Y directions respectively).

Moreover, the present invention proposes the method for preparing the above-mentioned magnetic sensor. The magnetic sensor is an in-plane integrated three-dimensional space magnetic sensor, and the in-plane integrated three-dimensional space magnetic sensor is a Three independent, nano-magnetic GMR or TMR multilayer films are sequentially deposited in different positions in different units of the substrate, which are the first magneto-sensitive detector film, the second magneto-sensitive detector film and the third magneto-sensitive detector film, and then Three independent GMR or TMR magneto-sensitive detector units are obtained through micro-processing to form a three-dimensional space magneto-sensitive detector, wherein the first magneto-sensitive detector film, the second magneto-sensitive detector film and the third magneto-sensitive detector The detector film adopts the GMR or TMR magnetic nano-multilayer film structure whose magnetic anisotropy can be modulated in three-dimensional space according to claim 1.

Wherein, the preparation method of above-mentioned magnetic sensitive sensor comprises steps:

Step 1: Select a substrate;

Step 2: Deposit the buffer layer, reference magnetic layer, intermediate layer, detection magnetic layer and cover layer of the first magnetosensitive detector film; when depositing the reference magnetic layer and depositing the detection magnetic layer, respectively add an in-plane induced magnetic field, and reference The direction of the magnetic field induced by the magnetic layer and the detection magnetic layer is perpendicular to each other;

Step 3: Deposit the buffer layer, reference magnetic layer, intermediate layer, detection magnetic layer and cover layer of the second magnetosensitive detector film; when depositing the reference magnetic layer and depositing the detection magnetic layer, respectively add an in-plane induced magnetic field, the reference magnetic The direction of the induced magnetic field of the layer and the detection magnetic layer is perpendicular to each other, and the direction of the induced magnetic field applied by the reference magnetic layer is perpendicular to the direction of the induced magnetic field applied by the reference magnetic layer in step 2;

Step 4: Deposit the buffer layer of the third magnetosensitive detector film, reference magnetic layer, intermediate layer, detection magnetic layer and cover layer; wherein when depositing the reference magnetic layer, do not add an induced magnetic field or apply an induced magnetic field perpendicular to the film surface, and use The vertical anisotropy induced by the ferromagnetic layer/non-magnetic layer interface, by controlling the thickness of the ferromagnetic layer, the reference magnetic layer of the third magnetosensitive detector has an easy magnetization direction perpendicular to the film surface; when depositing the detection magnetic layer, by controlling the thickness of the ferromagnetic layer The thickness makes the third magnetosensitive detector detect the magnetic layer have weak in-plane anisotropy, and add an in-plane induced magnetic field at the same time, and the direction of the induced magnetic field is consistent with the direction of the magnetic field in the detection magnetic layer in step 3;

Step 5: For the GMR or TMR magnetosensitive detector film whose reference magnetic layer and detection magnetic layer are both pinned structures, according to the Neel temperature T _N from high to low, sequentially apply and grow at a temperature higher than Neel temperature. Annealing in an external magnetic field with a consistent magnetic field makes the easy magnetization directions of the reference magnetic layer and the detection magnetic layer of each magnetosensitive detector thin film perpendicular to each other.

Step 6: The above three magnetosensitive detector thin film GMR or TMR magnetic nano-multilayer film structures are conventionally micro-processed into GMR or TMR magnetosensitive detector units of different shapes ranging from tens of nanometers to tens of microns , For example, three GMR or TMR devices of hollow or solid ellipse, rectangle, regular polygon and other specific shapes constitute an in-plane integrated three-dimensional magnetic sensor.

The present invention utilizes the perpendicular anisotropy induced by the ferromagnetic layer/non-magnetic layer interface to modulate the magnetic anisotropy of the reference magnetic layer and detect the magnetic layer: obtain the reference layer on the film plane with the easy magnetization axis perpendicular to the thinner part of the ferromagnetic layer. The reference layer with the easy magnetization axis in the plane is obtained at the thicker ferromagnetic layer; then the pinning structure or induced magnetic field growth is used to realize the modulation of the magnetic anisotropy of the reference magnetic layer and the detection magnetic layer in three-dimensional space. Simple, consistent, and highly integrated.

Description of drawings

Figure 1a is a schematic diagram of the basic principle of the magnetic anisotropy induced by the ferromagnetic layer/nonmagnetic layer interface of the present invention;

Figure 1b is the hysteresis loop of the MgO/CoFeB thin film measured experimentally at CoFeB 1nm, showing perpendicular magnetic anisotropy;

Figure 1c is the hysteresis loop of the MgO/CoFeB thin film measured experimentally at CoFeB 1.6nm, showing in-plane magnetic anisotropy;

Figures 2a to 2c are structural schematic diagrams of an in-plane magnetosensitive detector array, unit and magnetic nano-multilayer film provided by the present invention;

Figure 3a is a schematic diagram of two masks used in the preparation of in-plane integrated magnetosensitive detector arrays provided by the present invention;

3b and 3c are structural schematic diagrams of two mask units for preparing in-plane integrated magnetosensitive detectors provided by the present invention. The preparation scheme of the present invention is specifically described below with reference to FIGS. 3a, 3b, and 3c;

Figure 4a is a schematic diagram of the principle of measuring the three-dimensional magnetic field by the in-plane integrated magnetosensitive detector provided by the present invention;

Figure 4b is a schematic diagram of the wiring mode of a single magnetosensitive detector unit in the in-plane integrated magnetosensitive detector provided by the present invention;

Figure 4c is the measured magnetoresistance curve of the CoFeB/MgO/CoFeB magnetic tunnel junction when the vertical film surface is applied, where the magnetoresistivity is defined as the ratio of the difference between the parallel state resistance and the antiparallel state resistance and the parallel state resistance.

Among them, reference signs

A ferromagnetic layer

B non-magnetic layer

Detailed ways

The basic principle of the present invention is: use the magnetic anisotropy induced by the ferromagnetic layer/nonmagnetic layer interface to change the thickness of the ferromagnetic layer, so that the same magnetic film has different vertical or in-plane magnetic properties at different thicknesses of the ferromagnetic layer. Anisotropy, combined with pinning structures or induced magnetic field growth to modulate the in-plane easy magnetization orientation.

Figure 1a is a schematic diagram of the perpendicular magnetic anisotropy induced by the ferromagnetic layer/nonmagnetic layer interface. In the wedge-shaped thin film shown in Figure 1, a magnetic film with perpendicular film surface magnetic anisotropy will be obtained under the condition of a thin ferromagnetic layer. Thin film (set as Z direction, Θ=0°), obtain a magnetic film with in-plane magnetic anisotropy (in XY plane, Θ=90°) under the condition that the ferromagnetic layer is thicker.

Based on the above principles, the present invention proposes a GMR or TMR magnetic nano-multilayer film structure in which the magnetic anisotropy of the magnetic layer can be modulated in three-dimensional space. This structure utilizes the perpendicular anisotropy induced by the non-magnetic layer/interface of the aforementioned ferromagnetic layer to modulate the perpendicular magnetic anisotropy of the reference magnetic layer (Reference Layer, RL) and the detection magnetic layer (FreeLayer, FL): The reference layer with the easy magnetization axis perpendicular to the film surface is obtained at the thinner part, and the reference layer with the easy magnetization axis in the plane is obtained at the thicker part of the ferromagnetic layer; then the reference magnetic layer and the detection magnetic layer (Free Layer, FL) Modulation of magnetic anisotropy in three dimensions.

The GMR or TMR magnetic nano-multilayer film structure whose magnetic anisotropy can be modulated in the three-dimensional space proposed by the present invention comprises in turn: a substrate (Sub) and a buffer layer (Buffer Layer, BL) thereon, a reference magnetic layer (Reference Layer, RL), intermediate layer (Space), detection magnetic layer (Free Layer) and cover layer (Capping Layer); the reference magnetic layer and the detection magnetic layer have utilized the vertical force induced by the ferromagnetic layer A/nonmagnetic layer B interface Anisotropy, by adjusting the thickness of the ferromagnetic layer in the reference magnetic layer so that its easy magnetization direction is in-plane, set as XY direction, or perpendicular to the film surface, set as Z direction.

Among them, when the easy magnetization direction is in the plane, the orientation of the easy magnetization axis in the plane is modulated by the way of pinning structure or induced magnetic field growth.

Wherein, the coercive force Hc ₁ of the reference magnetic layer is greater than the coercive force Hc ₂ of the detection magnetic layer.

Wherein, the intermediate layer is a non-magnetic metal layer or an insulating barrier layer, wherein, corresponding to the GMR magnetic nano-multilayer thin film structure, the intermediate layer is a non-magnetic metal layer, corresponding to the TMR magnetic nano-multi-layer thin film structure, and the intermediate layer is an insulating barrier layer.

Wherein, the reference magnetic layer and the detection magnetic layer can be composed of a single ferromagnetic layer (FM), or can be directly or indirectly composed of a ferromagnetic layer, an antiferromagnetic layer (AFM) and a nonmagnetic metal layer (NM). Pinning structure; the direct pinning means that the antiferromagnetic material layer directly contacts the FM/AFM with the ferromagnetic layer, and the indirect pinning means inserting a very thin layer between the antiferromagnetic material layer and the ferromagnetic layer. A thin non-magnetic metal layer, which constitutes the structure FM/NM/AFM or inserts the composite layer FM1/NM/FM11/AFM, and the structure of the magnetic nano-multilayer film is the following structure:

Sub/BL/AFM1/FM11/NM1/FM1/Space/FM2/NM2/FM22/AFM2/CL;

or Sub/BL/AFM1/NM1/FM1/Space/FM2/NM2/FM2/AFM2/CL;

or Sub/BL/AFM1/FM1/Space/FM2/NM2/FM22/AFM2/CL;

or Sub/BL/AFM1/NM1/FM1/Space/FM2/NM2/AFM2/CL;

or Sub/BL/AFM1/FM1/Space/FM2/NM2/AFM2/CL;

or Sub/BL/AFM1/FM1/Space/FM2/AFM2/CL

or Sub/BL/AFM1/FM11/NM/FM1/Speace/FM2/CL

or Sub/BL/AFM1/NM1/FM1/Speace/FM2/CL

or Sub/BL/AFM1/FM1/Speace/FM2/CL

Wherein, the material of the ferromagnetic layer is preferably Co, Fe, Ni or a ferromagnetic metal alloy material, or a semi-metal material, and the thickness varies from 0.2 to 10 nm according to the required magnetic anisotropy.

Wherein, the ferromagnetic metal alloy thin film is preferably CoFe, CoFeB, NiFeCr or NiFe, and the semi-metal material is preferably CoFeAl, CoMnAl, CoMnGe or CoMnGa.

Wherein, the antiferromagnetic material is preferably PtMn, IrMn, FeMn, NiMn, or selected from oxides with antiferromagnetism, the oxide with antiferromagnetism is preferably CoO or NiO, and the PtMn, IrMn, FeMn and The thickness of NiMn is 3-30nm, and the thickness of the antiferromagnetic oxide is 5-50nm.

Wherein, the non-magnetic metal layer is preferably Cu, Cr, V, Nb, Mo, Ru, Pd, Ta, W, Pt, Ag, Au or alloys thereof, with a thickness of 0.2-10 nm.

Wherein, when the intermediate layer is a potential barrier, AlO _x (0<x<3/2), MgO, Mg _1-x Zn _x O (0<x<1), Mg _x Al _{2/3 (1- x)} O (0<x<1), AlN, Ta ₂ O ₅ , ZnO, HfO ₂ , TiO ₂ inorganic oxides, with a thickness of 0.5-5 nm; when the intermediate layer is a non-magnetic metal, Cu and Cr are preferred , V, Nb, Mo, Ru, Pd, Ta, W, Pt, Ag, Au metal materials, the thickness is 0.4 ~ 10nm. Among them, AlO _x refers to aluminum oxide Al ₂ O ₃ , but in actual preparation, due to imperfect preparation materials (such as oxygen vacancies, etc.), the ratio of aluminum to oxygen cannot be exactly 2:3, and it is usually marked as AlO _x .

Wherein, the covering layer is a metal layer that is not easy to be oxidized and corroded and has good conductivity, and is used to protect the structure from being oxidized and corroded. The structure of the covering layer is Ta, Cu, Al, Ru, Au, Ag, A single-layer metal layer of Pt, or a multi-layer thin film of the above-mentioned metal, the thickness of the covering layer is 2-100 nm.

Moreover, the present invention proposes a magnetic sensor prepared based on the above-mentioned magnetic nano-multilayer film structure. The magnetic sensor is an in-plane integrated three-dimensional space magnetic sensor, and the in-plane integrated three-dimensional space magnetic sensor includes three independent magnetic detector units at different positions on the same substrate. The detector units are all prepared by adopting the magnetic nano-multilayer film structure described in claim 1. Among them, when there is no external magnetic field, the direction of the magnetic moment of the reference layer of each magnetosensitive detector unit is perpendicular to the direction of the magnetic moment of the detection layer; The direction of the easy magnetization axis of the reference layer of the unit is perpendicular to the film surface, and the directions of the easy magnetization axes of the reference layers of the other two magnetosensitive detector units are parallel to the film surface and perpendicular to each other.

Moreover, the present invention proposes a method for preparing the above magnetic sensor, the magnetic sensor is an in-plane integrated three-dimensional space magnetic sensor, and the in-plane integrated three-dimensional space magnetic sensor uses a mask shielding method Three independent, nano-magnetic GMR or TMR multilayer films are sequentially deposited at different positions in different units of the substrate, namely the first magneto-sensitive detector film, the second magneto-sensitive detector film and the third magneto-sensitive detector film, and then Obtain three independent GMR or TMR magnetosensitive detector units (D1, D2 and D3 shown in Fig. 2b) through micromachining, constitute a three-dimensional magnetic sensor, wherein, the first magnetosensitive detector thin film, the second Both the magnetosensitive detector thin film and the third magnetic sensitive detector thin film adopt the GMR or TMR magnetic nano-multilayer thin film structure whose magnetic anisotropy can be modulated in three-dimensional space according to claim 1 (shown in FIG. 2c ).

Wherein, the above-mentioned method comprises steps:

Step 1: Select a substrate;

Step 2: Deposit the buffer layer, reference magnetic layer, intermediate layer, detection magnetic layer and cover layer of the first magnetosensitive detector film; when depositing the reference magnetic layer and depositing the detection magnetic layer, add an in-plane induced magnetic field respectively, and reference The direction of the magnetic field induced by the magnetic layer and the detection magnetic layer is perpendicular to each other;

Step 3: Deposit the buffer layer, reference magnetic layer, intermediate layer, detection magnetic layer and cover layer of the second magnetosensitive detector film; when depositing the reference magnetic layer and depositing the detection magnetic layer, respectively add an in-plane induced magnetic field, the reference magnetic The direction of the induced magnetic field of the layer and the detection magnetic layer is perpendicular to each other, and the direction of the induced magnetic field applied by the reference magnetic layer is perpendicular to the direction of the induced magnetic field applied by the reference magnetic layer in step 2;

Step 4: Deposit the buffer layer of the third magnetosensitive detector film, reference magnetic layer, intermediate layer, detection magnetic layer and cover layer; wherein when depositing the reference magnetic layer, do not add an induced magnetic field or apply an induced magnetic field perpendicular to the film surface, and use The vertical anisotropy induced by the ferromagnetic layer/non-magnetic layer interface, by controlling the thickness of the ferromagnetic layer, the reference magnetic layer of the third magnetosensitive detector has an easy magnetization direction perpendicular to the film surface; when depositing the detection magnetic layer, by controlling the thickness of the ferromagnetic layer The thickness makes the third magnetosensitive detector detect the magnetic layer have weak in-plane anisotropy, and add an in-plane induced magnetic field at the same time, and the direction of the induced magnetic field is consistent with the direction of the magnetic field in the detection magnetic layer in step 3;

Step 5: For the GMR or TMR magnetosensitive detector film whose reference magnetic layer and detection magnetic layer are both pinned structures, according to the Neel temperature T _N from high to low, sequentially apply and grow at a temperature higher than Neel temperature. Annealing in an external magnetic field with a consistent magnetic field makes the easy magnetization directions of the reference magnetic layer and the detection magnetic layer of each magnetosensitive detector thin film perpendicular to each other.

Step 6: The above three magnetosensitive detector thin film GMR or TMR magnetic nano-multilayer film structures are conventionally micro-processed into GMR or TMR magnetosensitive detector units of different shapes ranging from tens of nanometers to tens of microns , For example, three GMR or TMR devices of hollow or solid ellipse, rectangle, regular polygon and other specific shapes constitute an in-plane integrated three-dimensional magnetic sensor.

Specifically, the technical scheme of the present invention is as follows: the present invention provides a GMR or TMR magnetic nano-multilayer film structure whose magnetic anisotropy can be modulated in three-dimensional space, and the structure includes a buffer layer grown on a substrate (Sub) (Buffer Layer, BL), reference magnetic layer (Reference Layer, RL), intermediate layer (Space), detection magnetic layer (Free Layer, FL) and cover layer (Capping Layer, CL); wherein, the reference magnetic layer utilizes The vertical anisotropy induced by the aforementioned ferromagnetic layer/non-magnetic layer interface is eliminated, and the thickness of the ferromagnetic layer in the reference magnetic layer and the detection magnetic layer is adjusted so that the easy magnetization direction is in-plane (set as XY direction) or perpendicular to the film plane (set as XY direction) is the Z direction); when the easy magnetization axis is in the plane, the orientation of the easy magnetization axis is modulated by the mode of pinning structure or induced magnetic field growth; the reference magnetic layer coercive force (Hc ₁ ) Greater than the coercive force (Hc ₂ ) of the detection magnetic layer; the intermediate layer is a non-magnetic metal layer or an insulating barrier layer, wherein, when the intermediate layer is a non-magnetic metal layer, the magnetic nano-multilayer film is suitable for GMR-based The magnetosensitive detector based on TMR effect, when the intermediate layer is an insulating barrier layer, the magnetic nano multi-layer thin film is suitable for the magnetosensitive detector based on TMR effect.

In the above technical scheme, the substrate (Sub) can be glass substrate, Si substrate, Si/SiO ₂ substrate, SiC substrate and other inorganic substrates, also can be polyethylene, polypropylene, polystyrene, According to organic flexible substrates such as terephthalate, polyimide, and polycarbonate, the thickness is 0.3 to 1 mm.

In the above technical scheme, the buffer layer (BL) is a metal material with high resistance and tight bonding with the substrate, preferably Ta, Ru, Cr, Pt, or the above-mentioned metal multilayer film structure such as Ta/Ru/ Ta has a thickness of 3 to 30 nm.

In the above technical scheme, the reference magnetic layer (RL) can be a single-layer ferromagnetic layer (FM1), or it can be a ferromagnetic layer, an antiferromagnetic layer (AFM1) and a nonmagnetic metal layer (NM1). ) constitutes a direct or indirect pinning structure; the perpendicular magnetic anisotropy of the reference magnetic layer can be modulated by adjusting the thickness of the ferromagnetic layer; the coercive force (Hc ₁ ) of the reference magnetic layer is greater than the coercive force (Hc ₂ ). The material of the ferromagnetic layer is preferably Co, Fe, Ni, or ferromagnetic metal alloy film, preferably CoFe, CoFeB, NiFeCr or NiFe (such as: Ni81Fe19), etc., and the thickness generally varies from 0.2 to 10 nm. The antiferromagnetic layer includes alloy materials with antiferromagnetism, preferably PtMn, IrMn, FeMn and NiMn, with a thickness of 3-30 nm; and oxides with antiferromagnetism, preferably CoO, NiO, with a thickness of 5-50 nm ; The non-magnetic metal layer generally adopts Cu, Cr, V, Nb, Mo, Ru, Pd, Ta, W, Pt, Ag, Au or their alloys, and the thickness is generally 0.2-10 nm.

In the above technical scheme, when the intermediate layer (Space) is a potential barrier, generally AlO _x (0<x<3/2), MgO, Mg _1-x Zn _x O (0<x<1) , Mg _x Al _2/3(1-x) O (0<x<1), AlN, Ta ₂ O ₅ , ZnO, HfO ₂ , TiO ₂ and other inorganic oxides, preferably AlO _x (0<x<3/ 2), MgO, Mg _1-x Zn _x O (0<x<1), Mg _x Al _{2/3 (1-x)} O (0<x<1), AlN, the thickness is 0.5-5nm; When the intermediate layer is made of non-magnetic metal, it is preferably Cu, Cr, V, Nb, Mo, Ru, Pd, Ta, W, Pt, Ag, Au and other metal materials, and the thickness is 0.2-10 nm.

In the above technical scheme, the detection layer (FL) can be composed of a single ferromagnetic layer (FM2), or can be directly or indirectly pinned by a ferromagnetic layer, an antiferromagnetic layer (AFM2) and a nonmagnetic metal layer (NM2). structure; wherein, the easy magnetization direction in the detection magnetic layer can be adjusted through the pinning structure or the growth method of the induced magnetic field; and the coercive force (Hc ₂ ) of the detection magnetic layer is smaller than the coercive force (Hc ₁ ) of the reference magnetic layer. The thickness of the ferromagnetic layer in the detection magnetic layer is generally 1-10 nm.

In the above technical solution, the cover layer (CL) is a metal layer that is not easily oxidized and corroded and has good conductivity, and is used to protect the structure from oxidation and corrosion. The cover layer structure can be a single-layer metal layer, and the material is preferably Ta, Cu, Al, Ru, Au, Ag, Pt, etc., or it can be a multilayer film composed of the above metals, such as Cu/Au, Ta/Ru, etc., the thickness 2 to 100nm.

The direct pinning in the above technical solution refers to that the antiferromagnetic material layer (AFM) directly contacts the FM/AFM with the ferromagnetic layer (FM). The indirect pinning refers to inserting a thin non-magnetic metal layer between the antiferromagnetic material layer and the ferromagnetic layer, such as FM/NM/AFM structure; or inserting a composite layer FM1/NM/FM11/AFM , to reduce and regulate this pinning effect. The magnetic nano multilayer film structure satisfying the above scheme includes:

(1)Sub/BL/AFM1/FM11/NM11/FM1/Space/FM2/NM2/FM22/AFM2/CL;

(2)Sub/BL/AFM1/NM1/FM1/Space/FM2/NM2/FM22/AFM2/CL;

(3)Sub/BL/AFM1/FM1/Space/FM2/NM2/FM22/AFM2/CL;

(4)Sub/BL/AFM1/NM1/FM1/Space/FM2/NM2/AFM2/CL;

(5)Sub/BL/AFM1/FM1/Space/FM2/NM2/AFM2/CL;

(6)Sub/BL/AFM1/FM1/Space/FM2/AFM2/CL

(7)Sub/BL/AFM1/FM11/NM/FM1/Speace/FM2/CL

(8)Sub/BL/AFM1/NM1/FM1/Speace/FM2/CL

(9)Sub/BL/AFM1/FM1/Speace/FM2/CL

Wherein the reference magnetic layer and the detection magnetic layer are GMR or TMR magnetic nano-multilayer film structures (1)-(6) with a pinning structure, and the Neel temperature of the antiferromagnetic material of the reference magnetic layer and the antiferromagnetic material of the detection magnetic layer are required Nair temperature is different. By selecting antiferromagnetic materials with different Neel temperatures T _N , such as NiMn (T _N ^NiMn = 1073K) [Magnetic Properties of Metals HPJWijin, Spinger-Verlag Metal Magnetic Handbook, edited by Springer Publishing House HPJWijin] , IrMn (T _N ^IrMn ＝975K) [JWCai et.al.Phy.Rev.B 70 214428 (2004)-ordered Mn3Ir magnetic midword scattering research I.Tomeno etc., applied physics], PtMn (T _N ^PtMn ＝693K )[JWCaiet.al.Phy.Rev.B 70 214428(2004)-Layered structure magnetoresistive head with fixed magnetization layer between free layer and lead layer S.Koji, T Yoshihiro, and T.Koichi US Patent No. 6982855] , FeMn(T _N ^FeMn ＝500K)[1Magnetic Properties of Metals HPJWijin, Spinger-Verlag-Metal Magnetic Handbook Springer Linger Publishing House editor HPJWijin] etc. realize or adjust the antiferromagnetic layer and ferromagnetic layer by annealing at different temperatures Interlayer non-magnetic layer thickness is achieved.

The present invention also provides the preparation of the GMR or TMR magnetic nano-film and the corresponding magnetosensitive detectors whose magnetic anisotropy of the reference magnetic layer can be modulated in three-dimensional space, especially the large-scale and uniform method for preparing the in-plane integrated three-dimensional magnetosensitive detectors. Specifically, it is to deposit three independent GMR or TMR nano-magnetic multilayer films sequentially at different positions in different units of the substrate by means of mask blocking, that is, the first magneto-sensitive detector film, the second magneto-sensitive detector film Thin film and the third magnetosensitive detector film, and then obtain three independent GMR or TMR magnetosensitive detectors (D1, D2 and D3) through microprocessing to form a three-dimensional magnetosensitive detector unit (Unit), see Figure 2, Fig. 2 is a schematic diagram of the structure of the in-plane integrated magnetosensitive detector (a) array (b) unit (unit) and (c) magnetic nano-multilayer film provided by the present invention.

Fig. 3a is a schematic diagram of masks used in the preparation of two in-plane integrated magnetosensitive detector arrays provided by the present invention; Fig. 3b and 3c are schematic diagrams of the structure of mask units used in the preparation of two in-plane integrated magnetosensitive detectors provided by the present invention. The preparation scheme of the present invention will be specifically described below with reference to FIGS. 3a, 3b, and 3c.

Preparation scheme 1

1) Select a substrate and clean it by conventional methods.

2) Use a mask that has holes and can move on the XY plane to block the substrate at a distance d from the substrate (0<d<1mm); use an ultra-high vacuum magnetron sputtering device to deposit the first magnetic sensitive detector film The buffer layer, reference magnetic layer, intermediate layer, detection magnetic layer and cover layer; when depositing the reference magnetic layer and depositing the detection magnetic layer, an in-plane induced magnetic field should be added respectively, and the directions of the induced magnetic fields of the reference magnetic layer and the detection magnetic layer are mutually vertical.

The mask with holes and movable on the XY plane is a mask plate with an area not smaller than the substrate, and includes m columns and n rows along the X direction and Y direction respectively, and the side length is a×b rectangular units, each rectangular unit There are holes with an area of 1×w in the distance from the rectangular sides a ₀ and b ₀ of the unit, where 1 and w range from 0.01mm to 5mm; the mask plate can be a metal template such as a copper plate, an aluminum plate or a stainless steel plate, or it can be a Organic templates such as polytetrafluoroethylene have a thickness t of 0.2-3mm; and can move in the X and Y directions, as shown in Figures 3a and 3b. Where a ₀ and b ₀ satisfy w+w _{0 <a 0 <a-2w-w 0 , l+l 0 <b 0 <b-2l-l 0 , and l 0 >} l, w ₀ >w.

3) Move the position of the mask plate l+l ₀ along the Y direction, satisfying l ₀ >l and b ₀ +2l+l ₀ <b, so that the hole opened by the mask plate does not overlap with the first magnetosensitive detector film (Y The distance from the first magnetosensitive detector film in the direction is l ₀ ), and the buffer layer, reference magnetic layer, intermediate layer, detection magnetic layer and cover layer of the second magnetosensitive detector film are deposited at the opening of the mask; where the reference When the magnetic layer and the detection magnetic layer are deposited, an inductive magnetic field should be added on one side respectively. The directions of the induced magnetic fields of the reference magnetic layer and the detection magnetic layer are perpendicular to each other, and the direction of the induced magnetic field applied by the reference magnetic layer is the same as that of the induced magnetic field applied by the reference magnetic layer in 2). Direction is vertical.

4) Move _the position of the mask plate along the X direction w+w ₀ , and satisfy a ₀ +2w+w ₀ <a and w 0 >w, so that the holes opened in the mask plate are neither in contact with the first magnetosensitive detector film nor Do not overlap with the second magnetosensitive detector film (the distance w ₀ from the second magnetosensitive detector film in the X direction), deposit the buffer layer of the third magnetosensitive detector film at the opening of the mask, refer to the magnetic layer, the middle layer, detection magnetic layer and cover layer; wherein when depositing the reference magnetic layer, no induced magnetic field or an induced magnetic field perpendicular to the film surface are applied, and the ferromagnetic thin film in contact with the intermediate layer is thin enough, so that the third magnetosensitive detector The thin film has an easy magnetization direction perpendicular to the film surface; when depositing the detection magnetic layer, an in-plane induced magnetic field is added, and the direction of the induced magnetic field is consistent with the magnetic field direction of the detection magnetic layer in 3). The anisotropy is weak, and it is easy to flip along the Z direction.

The above 3) and 4) order can be exchanged. After the above steps, m×n in-plane integrated three-dimensional magnetosensitive detector thin film units are obtained on the substrate, and each three-dimensional magnetic sensitive detector thin film unit is composed of a first magnetic sensitive detection film, a second magnetic sensitive detection film and a third magnetic sensitive detector film. Sensitive detection thin film composition.

5) For the GMR or TMR magnetosensitive detector thin film whose reference magnetic layer and detection magnetic layer are both pinned structures, according to the Neel temperature T _N from high to low, the induced magnetic field is applied and grown at a temperature higher than the Neel temperature Consistent external magnetic field annealing makes the easy magnetization directions of the reference magnetic layer and the detection magnetic layer of each magnetosensitive detector thin film perpendicular to each other.

6) The above-mentioned GMR or TMR magnetic nano-multilayer film structure undergoes conventional microprocessing, including: glue coating, pre-baking, ultraviolet exposure using a photolithographic plate with patterns to be processed, or electron beam exposure, development, fixing, and post-baking , ion beam etching, deposition of insulating layer, acetone degumming to obtain the bottom electrode and the giant magnetoresistance multilayer film or magnetic nano-tunnel junction on the bottom electrode, and then through the deposition of the top conductive electrode, glue coating, pre-baking, using a The patterned photolithography plate can be processed into different shapes of GMR or TMR magnetosensitive detectors with sizes ranging from tens of nanometers to tens of microns by ultraviolet exposure or electron beam exposure, development, fixing, post-baking, ion beam etching, etc. Device elements, such as hollow or solid ellipse, rectangle, regular polygon and other specific shapes of GMR or TMR devices.

Preparation scheme 2

The present invention provides another method for preparing the above-mentioned planar integrated three-dimensional magnetosensitive detector magnetic nano-film using a mask plate that has holes and can move in the Y direction:

1) Select a substrate and clean it by conventional methods.

2) Use a mask that has holes and can move on the XY plane to block the substrate at a distance d from the substrate (0<d<1mm); use an ultra-high vacuum magnetron sputtering apparatus to deposit the first magnetic sensitive detector unit Buffer layer, reference magnetic layer, intermediate layer, detection magnetic layer, and cover layer; when depositing the reference magnetic layer and the detection magnetic layer, an inductive magnetic field in one plane should be added respectively, and the directions of the induced magnetic fields of the reference magnetic layer and the detection magnetic layer are perpendicular to each other .

The mask that has holes and can move in the Y direction is a mask plate with an area not smaller than the substrate, and includes m columns and n rows along the X direction and Y direction respectively, and the side length is a×b rectangular units, and each rectangular unit There are holes with an area of l×w at the inner distance from the sides a ₀ and b ₀ of the rectangle, where l and w range from 0.01mm to 5mm. The mask plate can be a metal template such as a copper plate, an aluminum plate or a stainless steel plate, or it can be It is an organic plate such as polytetrafluoroethylene, with a thickness t of 0.2-3mm; and it can move in the Y direction, as shown in Figure 3a and 3c. where a ₀ and b ₀ satisfy where a ₀ and b ₀ satisfy a ₀ +w<a, 2l+2l ₀ <b ₀ <b-3l-2l ₀ , and l ₀ >l.

3) Move the position of the mask plate l+l ₀ along the Y direction, so that the hole opened by the mask plate does not overlap with the film of the first magnetosensitive detector (the distance from the film of the first magnetosensitive detector in the Y direction is l ₀ ). Deposit the second magnetosensitive detector unit film buffer layer, reference magnetic layer, intermediate layer, detection magnetic layer and cover layer at the opening of the mask; when depositing the reference magnetic layer and deposition of the detection magnetic layer, an in-plane induced magnetic field should be added respectively , the direction of the induced magnetic field of the reference magnetic layer and the detection magnetic layer are perpendicular to each other, and the direction of the induced magnetic field applied by the reference magnetic layer is perpendicular to the direction of the induced magnetic field applied by the reference magnetic layer in 2).

4) Continue to move the position of the mask plate l+l ₀ along the Y direction, so that the hole opened by the mask plate does not overlap with the film of the first magnetosensitive detector or the film of the second magnetosensitive detector (in the Y direction, it overlaps with the film of the second magnetosensitive detector). A magnetosensitive detector thin film and a second magnetic sensitive detector thin film have a distance of 2l ₀ +l and l ₀ ), and a third magnetic sensitive detector thin film buffer layer, a reference magnetic layer, an intermediate layer, and a detection layer are deposited at the mask opening. Magnetic layer and cover layer; Wherein when depositing reference magnetic layer, do not add induction magnetic field or apply the induction magnetic field of a vertical film surface, and make the ferromagnetic thin film that contacts with middle layer be thin enough, thereby make the 3rd magnetosensitive detector thin film have vertical The easy magnetization direction of the film surface; when depositing the detection magnetic layer, an in-plane induced magnetic field should be added, and the direction of the induced magnetic field is consistent with the magnetic field direction of the detection magnetic layer in 3). Weaker, prone to flipping in the Z direction.

As long as the size of the mask plate satisfies b ₀ +l<b, 2w+2w ₀ <a ₀ <a-3w-2w ₀ , and w ₀ >w, the mask plate can also move w+w ₀ twice in the X direction successively, The first magnetosensitive detector film, the second magnetosensitive detector film and the third magnetosensitive detector film are not overlapped with each other. After the above steps, m×n in-plane integrated three-dimensional magnetosensitive detector thin film units can also be obtained on the substrate, and each three-dimensional magnetic sensitive detector thin film unit is composed of a first magnetic sensitive detection film, a second magnetic sensitive detection film and a second magnetic sensitive detector film. It consists of three magnetosensitive detection films.

5) For the GMR or TMR magnetosensitive detector thin film whose reference magnetic layer and detection magnetic layer are both pinned structures, according to the Neel temperature T _N from high to low, the induced magnetic field is applied and grown at a temperature higher than the Neel temperature Consistent external magnetic field annealing makes the easy magnetization directions of the reference magnetic layer and the detection magnetic layer of each magnetosensitive detector thin film perpendicular to each other.

6) The above-mentioned GMR or TMR magnetic nano-multilayer film structure undergoes conventional microprocessing, including: glue coating, pre-baking, ultraviolet exposure using a photolithographic plate with patterns to be processed, or electron beam exposure, development, fixing, and post-baking , ion beam etching, deposition of insulating layer, acetone degumming to obtain the bottom electrode and the giant magnetoresistance multilayer film or magnetic nano-tunnel junction on the bottom electrode, and then through the deposition of the top conductive electrode, glue coating, pre-baking, and tape The photoresist plate to be processed can be processed into GMR or TMR magnetosensitive sensors with sizes ranging from tens of nanometers to tens of microns by ultraviolet exposure or electron beam exposure, development, fixing, post-baking, ion beam etching, etc. Detector elements, such as hollow or solid ellipses, rectangles, regular polygons and other specific shapes of GMR or TMR devices.

The present invention also provides a method for detecting magnetic field distribution in three-dimensional space by using the above-mentioned magnetosensitive detector, especially a planar integrated three-dimensional magnetosensitive detector. Fig. 4a is a schematic diagram of the principle of measuring a three-dimensional magnetic field by the in-plane integrated magnetosensitive detector provided by the present invention; Fig. 4b is a schematic diagram of the wiring mode of a single magnetosensitive detector unit in the in-plane integrated magnetosensitive detector provided by the present invention. As shown in Figure 4a below, the easy magnetization directions of the reference magnetic layer are perpendicular to each other and the two magnetosensitive detector units D1 and D2 in the plane detect the magnetic field in the X and Y directions, and the easy magnetization direction of the reference layer is perpendicular to the magnetosensitive detector unit of the film D3 detects the magnetic field in the Z direction; input constant voltage (a and b) or constant current (c and d) on a pair of electrodes formed by the upper and lower electrodes of each magnetosensitive detector unit, and in each magnetosensitive detector unit In addition, a pair of electrodes composed of upper and lower electrodes receives current signals (c and d) or voltage signals (a and b), as shown in FIG. 4b. When there is an external magnetic field, the resistance of the magnetosensitive detector unit changes, resulting in a change in the output signal. Since the reference magnetic layer is perpendicular to the easy magnetization direction of the detection magnetic layer, the output current/voltage signal of the magnetic sensitive detector unit has a linear relationship with the change of the magnetic field within a certain range, and the current/voltage of the magnetic sensitive detector unit is amplified and processed by the peripheral circuit. Change, you can get the size of the external magnetic field.

The GMR or TMR magnetic nano-multilayer film structure provided by the present invention and the corresponding magnetosensitive detector, especially the preparation method of the in-plane integrated three-dimensional magnetosensitive detector will be described below in conjunction with specific examples.

Embodiment 1 In this embodiment, the magnetic nano-multilayer film structure whose magnetic anisotropy can be modulated in three-dimensional space is used in a one-dimensional GMR magnetosensitive detector, and with the difference in thickness of the ferromagnetic layer in the reference magnetic layer, the direction of the detection magnetic field can be The in-plane magnetic field or the magnetic field perpendicular to the membrane plane.

1) Select a Si/SiO ₂ substrate with a thickness of 1mm as the substrate (Sub), and use a vacuum better than 2×10 ^-6 Pa on the magnetron sputtering equipment, and the deposition rate is 0.1nm/s. A buffer layer of Ta 5nm/Ru 20nm/Ta 5nm was deposited on the substrate under the condition that the argon pressure was 0.07Pa.

2) On the magnetron sputtering equipment, the antiferromagnetic layer IrMn 15nm is deposited on the buffer layer under the conditions of a vacuum better than 2×10 ^-6 Pa, a deposition rate of 0.1nm/s, and an argon pressure of 0.07Pa.

3) Deposit ^a ferromagnetic layer of Co 3nm or 0.3nm.

4) On the magnetron sputtering equipment, under the conditions of vacuum better than 2×10 ^-6 Pa, deposition rate of 0.07nm/s, and argon pressure of 0.07Pa, Cu of 2.5nm in the middle layer is deposited on the ferromagnetic layer.

5) On the magnetron sputtering equipment, under the conditions of vacuum better than 2×10 ^-6 Pa, deposition rate of 0.06nm/s, and argon pressure of 0.07Pa, a magnetic layer of 3nm Co is deposited on the intermediate layer.

6) Deposit a 0.85nm non-magnetic metal layer Ru on the magnetic layer on the magnetron sputtering equipment under the conditions of a vacuum better than 2×10 ^-6 Pa, a deposition rate of 0.1nm/s, and an argon pressure of 0.07Pa.

7) Deposit an 8nm antiferromagnetic layer PtMn on the non-magnetic metal layer on the magnetron sputtering equipment under the conditions of a vacuum better than 2×10 ^-6 Pa, a deposition rate of 0.1nm/s, and an argon pressure of 0.07Pa .

8) Deposit a 5nm Ta capping layer on the antiferromagnetic layer on the magnetron sputtering equipment under the conditions of a vacuum better than 2×10 ^-6 Pa, a deposition rate of 0.1nm/s, and an argon pressure of 0.07Pa.

9) For the 3nm ferromagnetic layer Co3nm thin film in 3), under the condition that the vacuum bar is better than 1×10 ^-4 Pa, first apply a 200Oe magnetic field along the plane to anneal the above thin film at a temperature T _N ^IrMn higher than the Neel temperature of IrMn ; After the temperature is lowered to below the IrMn Neel temperature, perform secondary annealing at a temperature higher than the PtMn Neel temperature T _N ^PtMn , and apply a magnetic field perpendicular to the first annealing magnetic field direction along the film surface during the secondary annealing, Thus, the GMR nano-magnetic multilayer film for in-plane magnetic field detection is obtained.

For the 0.3nm Co thin film in the middle ferromagnetic layer in 3), under the condition that the vacuum bar is better than 1×10 ^-4 Pa, first apply a 200Oe magnetic field perpendicular to the film surface at a temperature higher than IrMn Neel temperature T _N ^IrMn to the above thin film Annealing; after the temperature is lowered to below the IrMn Neel temperature, a second annealing is performed at a temperature higher than the PtMn Neel temperature T _N ^PtMn . During the second annealing, a magnetic field with the same magnitude as the first annealing magnetic field is applied along the film surface, thereby obtaining GMR nanomagnetic multilayer films for perpendicular magnetic field detection.

10) Adopt conventional semiconductor micromachining process to the above film, including: gluing, pre-baking, using a photolithography plate with a pattern to be processed to carry out ultraviolet exposure or electron beam exposure, developing, fixing, post-baking, ion beam etching, Acetone degumming, etc., to obtain multiple independent GMR devices, and each GMR device constitutes a one-dimensional GMR magnetosensitive detector.

11) Input constant voltage/constant current to the pair of electrodes formed by the upper and lower electrodes of each GMR magnetosensitive detector, and receive current/voltage signals at the pair of electrodes formed by the upper and lower electrodes of each magnetosensitive detector; When there is an external magnetic field, the resistance of the magnetosensitive detector changes, resulting in a change in the output signal. Since the reference magnetic layer is perpendicular to the direction of the magnetic moment of the detection magnetic layer, the output current/voltage signal has a linear relationship with the change of the magnetic field within a certain range. The magnitude of the external magnetic field can be obtained from the current/voltage signal.

Embodiment 2 In this embodiment, the magnetic nano-multilayer film structure whose magnetic anisotropy can be modulated in three-dimensional space is used in a one-dimensional TMR magnetosensitive detector, and the thickness of the ferromagnetic layer in the reference magnetic layer and the direction of the annealing magnetic field are different, and its detection The direction of the magnetic field can be an in-plane magnetic field or a magnetic field perpendicular to the membrane plane.

1) Select a Si/SiO ₂ substrate with a thickness of 1mm as the substrate, and use a vacuum better than 2×10 ^-6 Pa on the magnetron sputtering equipment, the deposition rate is 0.1nm/s, and the argon pressure during deposition is A buffer layer of Ta 5nm/Ru 20nm/Ta 5nm was deposited on the substrate under the condition of 0.07Pa.

2) On the magnetron sputtering equipment, the antiferromagnetic layer IrMn 15nm is deposited on the buffer layer under the conditions of a vacuum better than 2×10 ^-6 Pa, a deposition rate of 0.1nm/s, and an argon pressure of 0.07Pa.

3) Deposit a ferromagnetic layer CoFeB 2.5nm on the antiferromagnetic layer IrMn on the magnetron sputtering equipment under the conditions of a vacuum better than 2×10 ^-6 Pa, a deposition rate of 0.06nm/s, and an argon pressure of 0.07Pa or 1.3nm.

4) On the magnetron sputtering equipment, under the conditions of a vacuum better than 2×10 ^-6 Pa, a deposition rate of 0.07nm/s, and an argon pressure of 0.07Pa, deposit an insulating interlayer of 1.0nm MgO on the ferromagnetic layer CoFeB .

5) CoFeB with a ferromagnetic layer of 3nm was deposited on the insulating interlayer on the magnetron sputtering equipment under the conditions of a vacuum better than 2×10 ^-6 Pa, a deposition rate of 0.06nm/s, and an argon pressure of 0.07Pa.

6) On the magnetron sputtering equipment, the non-magnetic layer Ru0.9nm is deposited on the ferromagnetic layer under the conditions of a vacuum better than 2×10 ^-6 Pa, a deposition rate of 0.1nm/s, and an argon pressure of 0.07Pa.

7) Deposit a 6.5nm antiferromagnetic layer of PtMn on the non-magnetic layer with a vacuum better than 2×10 ^-6 Pa, a deposition rate of 0.1nm/s, and an argon pressure of 0.07Pa on the magnetron sputtering equipment .

8) On the magnetron sputtering equipment, under the conditions of a vacuum better than 2×10 ^-6 Pa, a deposition rate of 0.1nm/s, and an argon pressure of 0.07Pa, a covering layer is deposited on the antiferromagnetic layer: Ta 5nm/Ru 5nm.

9) For the thin film of CoFeB 3nm in the middle ferromagnetic layer in 3), under the condition that the vacuum bar is better than 1×10 ^-4 Pa, firstly apply a magnetic field of 200Oe along the surface of the above thin film at the temperature T _N ^IrMn higher than the Neel temperature of IrMn Annealing: After the temperature drops below the Neel temperature of IrMn, perform a second annealing at a temperature higher than the Neel temperature T _N ^PtMn of PtMn. During the second annealing, apply a magnetic field perpendicular to the direction of the first annealing magnetic field along the film surface during the second annealing. , so as to obtain the GMR nanomagnetic multilayer film for in-plane magnetic field detection.

For 3) CoFeB 1.3nm thin film in the middle ferromagnetic layer, under the condition that the vacuum bar is better than 1×10 ^-4 Pa, firstly apply a 200Oe magnetic field along the vertical film surface at a temperature higher than IrMn Neel temperature T _N ^IrMn . Thin film annealing; after the temperature is lowered below the Neel temperature of IrMn, a second annealing is performed at a temperature higher than the Neel temperature T _N ^{PtMn of} PtMn. During the second annealing, a magnetic field of the same size is applied along the film surface to obtain a vertical GMR nanomagnetic multilayer films for magnetic field detection.

10) Adopt conventional semiconductor micromachining process to the above film, including: gluing, pre-baking, using a photolithography plate with a pattern to be processed to carry out ultraviolet exposure or electron beam exposure, developing, fixing, post-baking, ion beam etching, Acetone degumming, etc., to obtain multiple independent TMR devices, and each TMR device constitutes a one-dimensional TMR magnetosensitive detector.

11) Input constant voltage/constant current to the pair of electrodes formed by the upper and lower electrodes of each TMR magnetosensitive detector, and receive the current/voltage signal at the pair of electrodes formed by the upper and lower electrodes of each magnetic sensitive detector; When there is an external magnetic field, the resistance of the magnetosensitive detector changes, resulting in a change in the output signal. Since the reference magnetic layer is perpendicular to the direction of the magnetic moment of the detection magnetic layer, the output current/voltage signal has a linear relationship with the change of the magnetic field within a certain range. The magnitude of the external magnetic field can be obtained from the current/voltage signal.

Embodiments 3-20 provide magnetic nano-multilayer film structures with different structures used in GMR one-dimensional magnetosensitive detectors (see Table 1).

Embodiments 20-38 provide magnetic nano-multilayer film structures with different structures for TMR one-dimensional magnetosensitive detectors (see Table 2).

Example 39 Using a mask that can move in the XY plane to prepare a three-dimensional magnetosensitive detector based on single-sided pinned Co/Cu-GMR magnetic nano-multilayer films

1) Select a Si/SiO ₂ with a length, width and height of 30mm×30mm×1mm as the substrate.

2) Select a rectangular Cu mask with a length, width, and height of 30mm×300mm×2mm. The mask has 10 rows and 10 columns of 3mm×3mm (a=b=3mm) square units, and each unit is at a distance from the lower left boundary of the unit. A hole with a length and a width of 0.25 mm (l=w=0.25 mm) is opened at a width of 0.5 mm (a ₀ =b ₀ =1 mm). Make the Cu mask distance d=0.2mm from the substrate. On the magnetron sputtering equipment, the buffer of the first magnetic sensitive detector film was deposited on Si/SiO ₂ under the conditions of vacuum better than 5×10 ^-5 Pa, deposition rate of 0.1nm/s, and argon pressure of 0.07Pa. Layer Ta 5nm, reference magnetic layer IrMn 8nm/Co 3nm, intermediate layer Cu 2.5nm, detection magnetic layer Co 4nm and cover layer Ta 5nm/Ru 5nm; when depositing the reference magnetic layer, add a magnetic field of 200Oe along the X direction in one side, When depositing the detection magnetic layer, add a magnetic field of 200Oe along the Y direction within one plane.

3) Move the mask plate 0.5mm along the Y direction, so that the hole opened by the mask plate does not overlap with the first magnetosensitive detector film. On the magnetron sputtering equipment, the vacuum is better than 5×10 ^-5 Pa, and the deposition rate Under the conditions of 0.1nm/s and argon pressure of 0.07Pa, the buffer layer Ta5nm of the second magnetosensitive detector film is deposited on Si/SiO ₂ , the reference magnetic layer PtMn 8nm/Co 3nm, the intermediate layer Cu 2.5nm, the detection magnetic Layer Co 4nm and cover layer Ta 5nm/Ru 5nm; when depositing the reference magnetic layer, add a magnetic field of 200Oe along the Y direction within one plane, and add a magnetic field of 200Oe along the X direction within one plane when depositing the detection magnetic layer.

4) Move the mask plate 0.5mm along the X direction, so that the hole opened by the mask plate does not overlap with the first magnetosensitive detector film and does not overlap with the second magnetosensitive detector film. The vacuum is better than 5×10 ^-5 Pa, the deposition rate is 0.1nm/s, and the argon pressure is 0.07Pa. The buffer layer Ta 5nm of the third magnetosensitive detector film is deposited on Si/SiO ₂ , and the reference magnetic layer is FeMn 4nm/Co 1.0nm, middle layer Cu 2.5nm, detection magnetic layer Co1.6nm and cover layer Ta 5nm/Ru 5nm; when depositing the reference magnetic layer, no external magnetic field is applied or an induced magnetic field of 200Oe perpendicular to the film surface is applied When depositing the detection magnetic layer, add a magnetic field of 200Oe along the Y direction within one plane.

5) For the substrate on which three magnetosensitive detector films are deposited in each unit, the conventional semiconductor micromachining process is adopted at the same time, including: gluing, pre-baking, ultraviolet exposure using a photolithography plate with a pattern to be processed or electronic Beam exposure, development, fixing, post-baking, ion beam etching, acetone degumming, etc., to obtain three independent GMR devices to form a three-dimensional magnetic sensitive detector unit, and finally cut the substrate into 100 according to the mask template unit Magnetic detector unit.

6) Input constant voltage/constant current to the pair of electrodes formed by the upper and lower electrodes of each GMR magnetosensitive detector unit, and receive current/voltage signals at the pair of electrodes formed by the upper and lower electrodes of each magnetosensitive detector; When there is an external magnetic field, the resistance of the magnetosensitive detector changes, resulting in a change in the output signal. Since the reference magnetic layer is perpendicular to the magnetic moment direction of the detection magnetic layer, the output current/voltage signal has a linear relationship with the change of the magnetic field within a certain range. The magnitude of the external magnetic field can be obtained by outputting the current/voltage signal.

Example 40 Using a mask that can move in the Y direction to prepare a three-dimensional magnetic sensor based on single-sided pinned Co/Au-GMR magnetic nano-multilayer films

1) Select a Si/SiO ₂ with a length, width and height of 30mm×30mm×1mm as the substrate.

2) Select a rectangular Cu mask with a length, width, and height of 30mm×30mm×2mm. The mask plate has 10 rows and 15 columns of 2mm×3mm (a=2mm, b=3mm) rectangular units, and each unit is at the bottom left of the unit. A hole with a length and width of l=0.15mm and w=1.5mm is opened at the boundary where the length and width are respectively a ₀ =0.25mm and b ₀ =0.9mm. Make the Cu mask plate 0.1mm away from the substrate, on the magnetron sputtering equipment, the vacuum is better than 5×10 ^-5 Pa, the deposition rate is 0.1nm/s, and the argon pressure is 0.07Pa _. Deposit the buffer layer Ta 5nm of the first magnetosensitive detector thin film, reference magnetic NiMn8nm/Fe2nm, middle layer Au 2.5nm, detection magnetic layer Fe 3nm and covering layer Ta 5nm/Ru 5nm; The inner magnetic field 200Oe along the X direction is added to the inner magnetic field 200Oe along the Y direction when depositing the detection magnetic layer.

3) Continue to move the mask plate 0.3mm along the Y direction, so that the hole opened by the mask plate does not overlap with the first magnetosensitive detector film. On the magnetron sputtering equipment, the vacuum is better than 5×10 ^-5 Pa, The deposition rate is 0.1nm/s, the argon pressure is 0.07Pa, the buffer layer Ta 5nm of the second magnetosensitive detector film is deposited on Si/SiO ₂ , the reference magnetic layer IrMn 8nm/Fe 2nm, the intermediate layer Au 2.5nm , Detection magnetic layer Fe3nm and cover layer Ta 5nm/Ru 5nm; when depositing the reference magnetic layer, add a magnetic field of 200Oe along the Y direction within one plane, and add a magnetic field of 200Oe along the X direction within one plane when depositing the detection magnetic layer.

4) Move the mask plate 0.3mm along the Y direction, so that the hole opened by the mask plate does not overlap with the first magnetosensitive detector film and does not overlap with the second magnetosensitive detector film. Better than 5×10 ^-5 Pa, the deposition rate is 0.1nm/s, and the argon pressure is 0.07Pa. The buffer layer Ta 5nm of the third magnetosensitive detector thin film is deposited on Si/SiO ₂ , and the reference magnetic layer PtMn 4nm /Fe 1nm, middle layer Au 2.5nm, detection magnetic layer Fe1.5nm and cover layer Ta 5nm/Ru 5nm; when depositing the detection magnetic layer, add a magnetic field of 200Oe along the Y direction within one plane.

5) For the substrate on which three magnetosensitive detector films are deposited in each unit, the conventional semiconductor micromachining process is adopted at the same time, including: gluing, pre-baking, ultraviolet exposure using a photolithography plate with a pattern to be processed or electronic Beam exposure, development, fixing, post-baking, ion beam etching, acetone degumming, etc., to obtain three independent GMR devices to form a three-dimensional magnetosensitive detector unit, and divide the substrate into 150 magnetosensitive detectors by unit division. detector unit.

6) Input constant voltage/constant current to the pair of electrodes formed by the upper and lower electrodes of each GMR magnetic sensitive detector unit, and receive the current/voltage signal on the pair of electrodes formed by the upper and lower electrodes of each magnetic sensitive detector unit ; When there is an external magnetic field, the resistance of the magnetosensitive detector changes, resulting in a change in the output signal. Since the reference magnetic layer is perpendicular to the direction of the magnetic moment of the detection magnetic layer, the output current/voltage signal has a linear relationship with the change of the magnetic field within a certain range. The magnitude of the external magnetic field can be obtained from the output current/voltage signal.

Example 41 Preparation of a three-dimensional magnetic sensor based on single-sided pinned CoFeB/MgO/CoFeB-TMR magnetic nano-multilayer films using a mask that can move in the XY plane

1) Select a Si/SiO ₂ with a length, width and height of 30mm×30mm×1mm as the substrate.

2) Select a rectangular stainless steel mask with a length, width, and height of 30mm×300mm×2mm. The mask has 10 rows and 10 columns of 3mm×3mm (a=b=3mm) square units, and each unit is the length and width from the lower left boundary of the unit A hole with a length and a width of 0.25 mm (l=w=0.25 mm) is opened at 1 mm (a ₀ =b ₀ =1 mm). The distance between the stainless steel mask and the substrate is 0.2mm, on the magnetron sputtering equipment, the vacuum is better than 5×10 ^-5 Pa, the deposition rate is 0.1nm/s, and the argon pressure is 0.07Pa, on Si/SiO ₂ Deposit the buffer layer Ta5nm of the first magnetosensitive detector film, the reference magnetic layer IrMn 8nm/CoFeB 3nm, the middle layer MgO 2nm, the detection magnetic layer CoFe 4nm and the cover layer Ta 5nm/Ru 5nm; when depositing the reference magnetic layer, add one side The inner magnetic field 200Oe along the X direction is added to the inner magnetic field 200Oe along the Y direction when depositing the detection magnetic layer.

3) Move the mask plate 0.5mm along the X direction, so that the hole opened by the mask plate does not overlap with the first magnetosensitive detector film. On the magnetron sputtering equipment, the vacuum is better than 5×10 ^-5 Pa, deposit The speed is 0.1nm/s, and the argon pressure is 0.07Pa. The buffer layer Ta 5nm of the second magnetosensitive detector unit film is deposited on Si/SiO ₂ , the reference magnetic layer is PtMn8nm/CoFeB 3nm, the middle layer MgO is 2nm, and the detection Magnetic layer CoFeB4nm and cover layer Ta 5nm/Ru 5nm; when depositing the reference magnetic layer, add a magnetic field of 200Oe along the Y direction within one plane, and add a magnetic field of 200Oe along the X direction within one plane when depositing the detection magnetic layer.

4) Move the mask plate 0.5mm along the Y direction, so that the hole opened by the mask plate does not overlap with the first magnetic sensitive detector film and does not overlap with the second magnetic sensitive detector film. It is better than 5×10 ^-5 Pa, the deposition rate is 0.1nm/s, and the argon pressure is 0.07Pa. The buffer layer Ta 5nm of the third magnetosensitive detector unit film is deposited on Si/SiO ₂ , and the reference magnetic layer is FeMn 4nm/CoFeB 1.3nm, middle layer MgO 1nm, detection magnetic layer CoFeB 1.5nm and cover layer Ta 5nm/Ru 5nm; when depositing the detection magnetic layer, add a magnetic field 200Oe along the Y direction in one plane; when depositing the reference magnetic layer Either no magnetic field was applied or a 200 Oe magnetic field was applied perpendicular to the film.

5) For the substrate on which three magnetosensitive detector films are deposited in each unit, the conventional semiconductor micromachining process is adopted at the same time, including: gluing, pre-baking, ultraviolet exposure using a photolithography plate with a pattern to be processed or electronic Beam exposure, development, fixing, post-baking, ion beam etching, acetone degumming, etc., to obtain three independent TMR devices to form a three-dimensional magnetosensitive detector unit, and cut the substrate into 150 magnetosensitive detectors according to the unit division. device unit.

6) Input constant voltage/constant current to the pair of electrodes formed by the upper and lower electrodes of each TMR magnetosensitive detector unit, and receive the current/voltage signal on the pair of electrodes formed by the upper and lower electrodes of each magnetosensitive detector unit ; When there is an external magnetic field, the resistance of the magnetosensitive detector changes, resulting in a change in the output signal. Since the reference magnetic layer is perpendicular to the easy magnetization direction of the detection magnetic layer, the output current/voltage signal has a linear relationship with the change of the magnetic field within a certain range. The magnitude of the external magnetic field can be obtained from the output current/voltage signal.

Example 42 Using a mask that can move in the Y direction to prepare a three-dimensional magnetosensitive detector based on single-sided pinned CoFeB/MgO/CoFeB-TMR magnetic nano-multilayer films

1) Select a Si/SiO ₂ with a length, width and height of 30mm×30mm×1mm as the substrate.

2) Select a rectangular Cu mask with a length, width, and height of 30mm×30mm×2mm. The mask has 10 rows and 10 columns of 2mm×3mm (a=2mm, b=3mm) rectangular units, and each unit is far from the lower left boundary of the unit A hole with a length and width of l=0.15mm and w=1.5mm is opened at a ₀ =0.25mm and b ₀ =0.9mm respectively. Make the Cu mask 0.1mm away from the substrate, on the magnetron sputtering equipment, the vacuum is better than 5×10 ^-5 Pa, the deposition rate is 0.1nm/s, and the argon pressure is 0.07Pa, on the Si/SiO ₂ Deposit the buffer layer Ta 5nm of the first magnetosensitive detector thin film, reference magnetic layer IrMn 12nm/CoFeB 3nm, intermediate layer MgO 1.5nm, detect magnetic layer CoFeB 4nm and cover layer Ta 5nm/Ru 5nm; Wherein add when depositing reference magnetic layer A magnetic field of 200Oe along the X direction in the upper plane is applied, and a magnetic field of 200Oe along the Y direction in the plane is added when depositing the detection magnetic layer.

3) Move the mask plate 0.3mm along the Y direction, so that the hole opened by the mask plate does not overlap with the first magnetosensitive detector film. On the magnetron sputtering equipment, the vacuum is better than 5×10 ^-5 Pa, deposit The rate is 0.1nm/s, the argon pressure is 0.07Pa, the buffer layer Ta5nm of the second magnetosensitive detector thin film is deposited on Si/ _SiO2 , the reference magnetic layer PtMn 12nm/CoFeB 3nm, the middle layer MgO 1.5nm, the detection Magnetic layer CoFeB4nm and cover layer Ta 5nm/Ru 5nm; when depositing the reference magnetic layer, add a magnetic field of 200Oe along the Y direction within one plane, and add a magnetic field of 200Oe along the X direction within one plane when depositing the detection magnetic layer.

4) Move the mask plate 0.3mm along the Y direction, so that the hole opened by the mask plate does not overlap with the first magnetosensitive detector film and does not overlap with the second magnetosensitive detector unit film. The vacuum is better than 5×10 ^-5 Pa, the deposition rate is 0.1nm/s, and the argon pressure is 0.07Pa. The buffer layer Ta 5nm of the third magnetosensitive detector unit film is deposited on Si/SiO ₂ , and the reference magnetic layer FeMn 4nm/CoFeB 1.nm, middle layer MgO 1.5nm, detection magnetic layer CoFeB 1.5nm and cover layer Ta 5nm/Ru 5nm; when depositing the detection magnetic layer, add a magnetic field of 200Oe along the Y direction within one side.

5) For the substrate on which three magnetosensitive detector films are deposited in each unit, the conventional semiconductor micromachining process is adopted at the same time, including: gluing, pre-baking, ultraviolet exposure using a photolithography plate with a pattern to be processed or electronic Beam exposure, development, fixing, post-baking, ion beam etching, acetone degumming, etc., to obtain three independent TMR devices to form a three-dimensional magnetosensitive detector unit, and divide the substrate into 150 magnetosensitive detectors according to the unit division. detector unit.

6) Input constant voltage/constant current to the pair of electrodes formed by the upper and lower electrodes of each TMR magnetosensitive detector unit, and receive the current/voltage signal on the pair of electrodes formed by the upper and lower electrodes of each magnetosensitive detector unit ; When there is an external magnetic field, the resistance of the magnetosensitive detector changes, resulting in a change in the output signal. Since the reference magnetic layer is perpendicular to the direction of the magnetic moment of the detection magnetic layer, the output current/voltage signal has a linear relationship with the change of the magnetic field within a certain range. The magnitude of the external magnetic field can be obtained from the output current/voltage signal.

Example 43 Using a mask that can move in the XY plane to prepare a three-dimensional magnetosensitive detector based on double-sided pinned Co/Cu-GMR magnetic nano-multilayer films

1) Select a Si/SiO ₂ with a length, width and height of 30mm×30mm×1mm as the substrate.

2) Select a rectangular Cu mask with a length, width, and height of 30mm×300mm×2mm. The mask has 10 rows and 10 columns of 3mm×3mm (a=b=3mm) square units, and each unit is at a distance from the lower left boundary of the unit. A hole with a length and a width of 0.25 mm (l=w=0.25 mm) is opened at a width of 0.5 mm (a ₀ =b ₀ =1 mm). Make the Cu mask distance d=0.2mm from the substrate. On the magnetron sputtering equipment, the buffer of the first magnetic sensitive detector film was deposited on Si/SiO ₂ under the conditions of vacuum better than 5×10 ^-5 Pa, deposition rate of 0.1nm/s, and argon pressure of 0.07Pa. Layer Ta 5nm, reference magnetic layer NiMn 5nm/Co 3nm, intermediate layer Cu 2.5nm, detection magnetic layer Co 4nm/IrMn 5nm and cover layer Ta 5nm/Ru 5nm; where the reference magnetic layer is deposited along the X direction The magnetic field is 200Oe, and a magnetic field of 200Oe along the Y direction within one plane is added when depositing the detection magnetic layer.

3) Move the mask plate 0.5mm along the Y direction, so that the hole opened by the mask plate does not overlap with the first magnetosensitive detector film. On the magnetron sputtering equipment, the vacuum is better than 5×10 ^-5 Pa, and the deposition rate Under the conditions of 0.1nm/s and argon pressure of 0.07Pa, the buffer layer Ta5nm of the second magnetosensitive detector film is deposited on Si/SiO ₂ , the reference magnetic layer IrMn 5nm/Co 3nm, the intermediate layer Cu 2.5nm, the detection magnetic Layer Co 4nm/FeMn 5nm and cover layer Ta 5nm/Ru 5nm; when depositing the reference magnetic layer, add a magnetic field of 200Oe along the Y direction within one plane, and add a magnetic field of 200Oe along the X direction within one plane when depositing the detection magnetic layer.

4) Move the mask plate 0.5mm along the X direction, so that the hole opened by the mask plate does not overlap with the first magnetosensitive detector film and does not overlap with the second magnetosensitive detector film. The vacuum is better than 5×10 ^-5 Pa, the deposition rate is 0.1nm/s, and the argon pressure is 0.07Pa. The buffer layer Ta 5nm of the third magnetosensitive detector film is deposited on Si/SiO ₂ , and the reference magnetic layer is PtMn 5nm/Co 1nm, intermediate layer Cu 2.5nm, detection magnetic layer Co 1.5nm/FeMn 5nm and cover layer Ta 5nm/Ru 5nm; when depositing the reference magnetic layer, add a magnetic field 200O perpendicular to the film surface along the Z direction, and the deposition detection For the magnetic layer, a magnetic field of 200Oe along the X direction within one plane is applied.

5) Under the condition that the vacuum bar is better than 1×10 ^-4 Pa, firstly apply a magnetic field of 200Oe along the X direction of the film surface at a temperature higher than the NiMn Neel temperature T _N ^NiMn to anneal the above film for the first time; wait until the temperature drops to Remove the magnetic field after the NiMn Neel temperature T _N ^NiMn is below; when the temperature is higher than the IrMn Neel temperature T _N ^IrMn , apply a magnetic field of 200Oe along the in-plane Y direction for the second annealing, and wait until the temperature drops below the IrMn Neel temperature T _N ^IrMn Afterwards, the magnetic field is removed; then the third annealing is performed on PtMn with a magnetic field of 200Oe applied along the Z direction perpendicular to the film surface at a temperature higher than the PtMn Neel temperature T _N ^PtMn , and the magnetic field is removed after the temperature drops below the PtMn Neel temperature T _N ^PtMn ; Higher than the FeMn Neel temperature T _N ^FeMn is annealed with a magnetic field of 200Oe along the X direction of the film surface, and the magnetic field is removed after the temperature drops to normal temperature.

6) For the substrate on which three magnetosensitive detector thin films are deposited in each unit, the conventional semiconductor micromachining process is adopted at the same time, including: glue coating, pre-baking, ultraviolet exposure using a photolithography plate with patterns to be processed or electronic Beam exposure, development, fixing, post-baking, ion beam etching, acetone degumming, etc., to obtain three independent GMR devices to form a three-dimensional magnetosensitive detector unit, and finally divide the substrate into 100 magnetosensitive detectors according to the unit division. detector unit.

7) Input a constant voltage/constant current to the pair of electrodes formed by the upper and lower electrodes of each GMR magnetosensitive detector unit, and receive current/voltage signals on the pair of electrodes formed by the upper and lower electrodes of each magnetosensitive detector unit ; When there is an external magnetic field, the resistance of the magnetosensitive detector changes, resulting in a change in the output signal. Since the reference magnetic layer is perpendicular to the direction of the magnetic moment of the detection magnetic layer, the output current/voltage signal has a linear relationship with the change of the magnetic field within a certain range. The magnitude of the external magnetic field can be obtained from the output current/voltage signal.

Example 44 Preparation of a three-dimensional magnetosensitive detector based on double-sided pinned CoFeB/MgO/CoFeB-TMR magnetic nano-multilayer films using a mask that can move in the Y direction

1) Select a Si/SiO ₂ with a length, width and height of 30mm×30mm×1mm as the substrate.

2) Select a rectangular Cu mask with a length, width, and height of 30mm×30mm×2mm. The mask has 10 rows and 10 columns of 2mm×3mm (a=2mm, b=3mm) rectangular units, and each unit is far from the lower left boundary of the unit A hole with a length and width of l=0.15mm and w=1.5mm is opened at a ₀ =0.25mm and b ₀ =0.9mm respectively. Make the Cu mask 0.1mm away from the substrate, on the magnetron sputtering equipment, the vacuum is better than 5×10 ^-5 Pa, the deposition rate is 0.1nm/s, and the argon pressure is 0.07Pa, on the Si/SiO ₂ Deposit the buffer layer Ta 5nm of the first magnetosensitive detector film, the reference magnetic layer NiMn 12nm/CoFeB 3nm, the middle layer MgO 1.5nm, the detection magnetic layer CoFeB 4nm/IrMn5nm/ and the covering layer Ta 5nm/Ru 5nm; Add a magnetic field of 200Oe along the X direction within one plane when depositing the magnetic layer, and add a magnetic field of 200Oe along the Y direction within one plane when depositing the detection magnetic layer.

3) Move the mask plate 0.3mm along the Y direction, so that the hole opened by the mask plate does not overlap with the first magnetosensitive detector film. On the magnetron sputtering equipment, the vacuum is better than 5×10 ^-5 Pa, deposit The speed is 0.1nm/s, the argon pressure is 0.07Pa, the buffer layer Ta5nm of the second magnetosensitive detector film is deposited on Si/ _SiO2 , the reference magnetic layer IrMn 5nm/CoFeB 3nm, the middle layer MgO 1.5nm, the detection The magnetic layer is CoFeB4nm/FeMn 5nm and the cover layer is Ta 5nm/Ru 5nm; when depositing the reference magnetic layer, add a magnetic field of 200Oe along the Y direction within one plane, and add a magnetic field of 200Oe along the X direction within one plane when depositing the detection magnetic layer.

4) Move the mask plate 0.3mm along the Y direction, so that the hole opened by the mask plate does not overlap with the first magnetosensitive detector film and does not overlap with the second magnetosensitive detector film. It is better than 5×10 ^-5 Pa, the deposition rate is 0.1nm/s, and the argon pressure is 0.07Pa. The buffer layer Ta 5nm of the third magnetosensitive detector film is deposited on Si/SiO ₂ , and the reference magnetic layer PtMn 5nm /CoFeB 1nm, middle layer MgO 1.5nm, detection magnetic layer CoFeB 1.5nm/FeMn 5nm and cover layer Ta 5nm/Ru 5nm; when depositing the detection magnetic layer, add a magnetic field of 200Oe along the Y direction within one side.

5) Under the condition that the vacuum bar is better than 1×10 ^-4 Pa, firstly apply a magnetic field of 200Oe along the X direction of the film surface at a temperature higher than the NiMn Neel temperature T _N ^NiMn to anneal the above film for the first time; wait until the temperature drops to Remove the magnetic field after the NiMn Neel temperature T _N ^NiMn is below; when the temperature is higher than the IrMn Neel temperature T _N ^IrMn , apply a magnetic field of 200Oe along the in-plane Y direction for the second annealing, and wait until the temperature drops below the IrMn Neel temperature T _N ^IrMn Then remove the magnetic field; then apply a magnetic field of 200Oe in the direction perpendicular to the film surface, that is, the Z direction, for the third annealing at a temperature higher than the PtMn Neel temperature T _N ^PtMn , and remove the magnetic field after the temperature drops below the PtMn Neel temperature T _N ^PtMn ; finally Apply a magnetic field annealing along the in-plane X direction of 200Oe at T _N ^FeMn , which is higher than the Neel temperature of FeMn, and remove the magnetic field after the temperature drops to normal temperature.

6) For the substrate on which three magnetosensitive detector thin films are deposited in each unit, the conventional semiconductor micromachining process is adopted at the same time, including: glue coating, pre-baking, ultraviolet exposure using a photolithography plate with patterns to be processed or electronic Beam exposure, development, fixing, post-baking, ion beam etching, acetone degumming, etc., to obtain three independent TMR devices to form a three-dimensional magnetosensitive detector unit, and finally divide the substrate into 150 magnetosensitive detectors according to the unit division. detector unit.

7) Input constant voltage/constant current to the pair of electrodes formed by the upper and lower electrodes of each TMR magnetosensitive detector unit, and receive the current/voltage signal on the pair of electrodes formed by the upper and lower electrodes of each magnetosensitive detector unit ; When there is an external magnetic field, the resistance of the magnetosensitive detector changes, resulting in a change in the output signal. Since the reference magnetic layer is perpendicular to the direction of the magnetic moment of the detection magnetic layer, the output current/voltage signal has a linear relationship with the change of the magnetic field within a certain range. The magnitude of the external magnetic field can be obtained from the output current/voltage signal.

It should be noted that the various embodiments presented here are intended to better explain the practical application of the present invention and enable those skilled in the art to utilize the present invention. However, those skilled in the art will appreciate that the above descriptions and examples are examples for illustration only. The core content of the present invention is to provide a magnetic nano-multilayer film structure whose magnetic anisotropy can be modulated in three-dimensional space; Change the thickness of the magnetic layer to obtain perpendicular magnetization or in-plane magnetization at different thicknesses. At the same time, the magnetic anisotropy of the magnetic nano-film can be modulated in three dimensions by using the pinning structure, induced magnetic field growth and subsequent magnetic field annealing.

The effect of the present invention: the present invention uses the perpendicular anisotropy induced by the ferromagnetic layer/non-magnetic layer interface to modulate the magnetic anisotropy of the reference magnetic layer and the detection magnetic layer: the easy magnetization axis vertical film surface is obtained at the thinner ferromagnetic layer The reference layer of the ferromagnetic layer is obtained at the thicker part of the ferromagnetic layer, and the reference layer with the easy axis of magnetization in the plane is obtained; the pinning structure or induced magnetic field growth and subsequent annealing in the magnetic field are used to realize the magnetic anisotropy of the reference magnetic layer and the detection magnetic layer in three dimensions Spatial modulation, the magnetosensitive detector has simple process, good consistency, and high integration.

Certainly, the present invention also can have other various embodiments, without departing from the spirit and essence of the present invention, those skilled in the art can make various corresponding changes and deformations according to the present invention, but these corresponding changes All changes and modifications should belong to the protection scope of the claims of the present invention.

Claims (19)

1. a GMR or the TMR magnetic Nano multi-layer film structure that magnetic anisotropy can be modulated at three dimensions comprises: substrate and the resilient coating on it, reference magnetic layer, intermediate layer, detection magnetosphere and cover layer successively; It is characterized in that said reference magnetic layer has utilized the interface induced perpendicular magnetic anisotropy of ferromagnetic layer/non-magnetosphere, ferromagnetic layer thickness makes that its direction of easy axis is in the face in the reference magnetic layer through regulating, and is made as the XY direction, or vertical face, is made as the Z direction.

2. magnetic Nano multi-layer film structure according to claim 1 is characterized in that, when direction of easy axis is in face, adopts the mode of pinning structure and induced magnetic field growth to modulate the orientation of easy magnetizing axis in face.

3. magnetic Nano multi-layer film structure according to claim 1 is characterized in that, said reference magnetic layer coercivity H ₁Greater than surveying the magnetosphere coercivity H ₂

4. magnetic Nano multi-layer film structure according to claim 1; It is characterized in that said intermediate layer is non-magnetic metal layer or insulative barriers layer, wherein; Corresponding GMR magnetic Nano multi-layer film structure; Said intermediate layer is a non-magnetic metal layer, corresponding TMR magnetic Nano multi-layer film structure, and said intermediate layer is the insulative barriers layer.

5. magnetic Nano multi-layer film structure according to claim 1; It is characterized in that; Said reference magnetic layer can be made up of single ferromagnetic layer with the detection magnetosphere, also can be by being the direct or indirect pinning structure that ferromagnetic layer, inverse ferric magnetosphere and nonmagnetic metal layer constitute; Said direct pinning is meant that the antiferromagnet layer directly contacts FM/AFM with ferromagnetic layer, and described indirect pinning is meant to be inserted the very thin non-magnetic metal layer FM/NM/AFM of one deck or insert composite bed FM1/NM/FM11/AFM between antiferromagnet layer and ferromagnetic layer.

6. according to the said magnetic Nano multi-layer film structure of claim 1; It is characterized in that; The material of said ferromagnetic layer is selected from Co, Fe, Ni or ferromagnetic metal alloy material, and perhaps semi-metallic changes at 0.2～10nm by required magnetic anisotropy different-thickness.

7. according to the said magnetic Nano multi-layer film structure of claim 6, it is characterized in that said ferromagnetic metal alloy firm is selected from CoFe, CoFeB, NiFeCr or NiFe, said semi-metallic is selected from CoFeAl, CoMnAl, CoMnGe or CoMnGa.

8. according to the said magnetic Nano multi-layer film structure of claim 1; It is characterized in that; Said antiferromagnetic materials are selected from PtMn, IrMn, FeMn, NiMn, perhaps are selected to have anti-ferromagnetic oxide, and said have anti-ferromagnetic oxide and be selected from CoO or NiO; The thickness of said PtMn, IrMn, FeMn and NiMn is 3～30nm, and said thickness with anti-ferromagnetic oxide is 5～50nm.

9. according to the said magnetic Nano multi-layer film structure of claim 1, it is characterized in that said non-magnetic metal layer is selected from Cu, Cr, V, Nb, Mo, Ru, Pd, Ta, W, Pt, Ag, Au or its alloy, thickness is 0.2～10nm.

10. according to the said magnetic Nano multi-layer film structure of claim 1, it is characterized in that, when said intermediate layer is potential barrier, be selected from AlO _x, MgO, Mg _1-xZn _xO, MgxAl _{2/3 (1-x)}O, AlN, Ta ₂O ₅, ZnO, HfO ₂, TiO ₂Inorganic oxide, thickness are 0.5～5nm, wherein, and for AlO _x, 0＜x＜3/2 is for Mg _1-xZn _xO and Mg _xAl _{2/3 (1-x)}O, 0＜x＜1; Said when the intermediate layer is nonmagnetic metal, be selected from Cu, Cr, V, Nb, Mo, Ru, Pd, Ta, W, Pt, Ag, Au metal material, thickness is 0.2～10nm.

11., it is characterized in that said resilient coating is the big and metal material that closely contact with substrate of resistance according to the said magnetic Nano multi-layer film structure of claim 1, described buffer layer thickness is 3～30nm.

12., it is characterized in that said resilient coating is selected from Ta, Ru, Cr, Pt, perhaps the multi-layer film structure of above-mentioned metal according to the said magnetic Nano multi-layer film structure of claim 11.

13. according to the said magnetic Nano multi-layer film structure of claim 1; It is characterized in that; Said cover layer is used to protect the not oxidized and corrosion of structure for being difficult for oxidized and corrosion and better conductivity metal level, and said tectal structure is the metal level of the individual layer of Ta, Cu, Al, Ru, Au, Ag, Pt; Perhaps be the plural layers of above-mentioned metal, said tectal thickness is 2～100nm.

14., it is characterized in that said substrate is glass substrate, Si substrate, Si/SiO according to the said magnetic Nano multi-layer film structure of claim 1 ₂The inorganic substrate of substrate, SiC substrate perhaps is polyethylene, polypropylene, polystyrene, according to organic flexible substrate of terephthalic acid (TPA) diol ester, polyimides, Merlon, the thickness of said substrate is 0.3～1mm.

15. magneto-dependent sensor based on the described magnetic Nano multi-layer film structure preparation of claim 1.

16. magneto-dependent sensor according to claim 15; It is characterized in that; Said magneto-dependent sensor is that three dimensions magnetosensitive integrated in the face is surveyed device; Integrated three dimensions magnetosensitive is surveyed device and is comprised three of diverse location on the same substrate independently magnetosensitive detector cells in said, and said magnetosensitive detector cells all adopts the said magnetic Nano multi-layer film structure preparation of claim 1.

17. magneto-dependent sensor according to claim 16 is characterized in that, during no external magnetic field, the reference layer magnetic moment direction of each magnetosensitive detector cells is vertical with its detecting layer magnetic moment direction respectively; Three magnetosensitive detector reference layer easy axis are vertical each other, and one of them magnetosensitive detector cells reference layer easy axis is perpendicular to face, and two magnetosensitive detector cells reference layer easy axis are parallel to face and vertical each other in addition.

18. the preparation method of the magneto-dependent sensor of a claim 16; It is characterized in that; Said magneto-dependent sensor is that three dimensions magnetosensitive integrated in the face is surveyed device; In said integrated three dimensions magnetosensitive survey device for utilize mask shielding mode diverse location in the substrate different units deposit successively three independently, nano-magnetic GMR or TMR plural layers; Be respectively the first magnetosensitive detector film, the second magnetosensitive detector film and the 3rd magnetosensitive detector film, obtain three independently GMR or TMR magnetosensitive detector cells through little processing again, constitute a three dimensions magnetosensitive and survey device; Wherein, the said first magnetosensitive detector film, the second magnetosensitive detector film and the 3rd magnetosensitive detector film all adopt GMR or the TMR magnetic Nano multi-layer film structure that the described magnetic anisotropy of claim 1 can be modulated at three dimensions.

19. the preparation method according to the magneto-dependent sensor of claim 18 is characterized in that, comprises step:

Step 1: select a substrate;

Step 2: the resilient coating, reference magnetic layer, intermediate layer, detection magnetosphere and the cover layer that deposit the first magnetosensitive detector film; Wherein deposit when reference magnetic layer and deposition are surveyed magnetosphere and add induced magnetic field in the one side respectively, and the reference magnetic layer is vertical each other with detection magnetosphere induced magnetic field direction;

Step 3: the resilient coating, reference magnetic layer, intermediate layer, detection magnetosphere and the cover layer that deposit the second magnetosensitive detector film; Wherein deposit and add induced magnetic field in the one side when reference magnetic layer is surveyed magnetosphere with deposition respectively; The reference magnetic layer is with to survey magnetosphere induced magnetic field direction vertical each other, and the reference magnetic layer adds in induced magnetic field direction and the step 2 the reference magnetic layer, and to add the induced magnetic field direction vertical;

Step 4: deposit the resilient coating of the 3rd magnetosensitive detector film, reference magnetic layer, intermediate layer, detection magnetosphere and cover layer; Do not add induced magnetic field when wherein depositing the reference magnetic layer or apply the induced magnetic field of a vertical face, and make the 3rd magnetosensitive detector film have the direction of easy axis of vertical face; Deposition adds induced magnetic field in the one side when surveying magnetosphere, and detection magnetospheric magnetic field direction is consistent in induced magnetic field direction and the step 3;

Step 5: for the reference magnetic layer with survey GMR or the TMR magnetosensitive detector film that magnetosphere is the pinning structure, press N T _NFrom high to low, under being higher than N, apply the consistent external magnetic field annealing of induced magnetic field when growing successively, make each magnetosensitive detector film reference magnetic layer vertical each other with detection magnetosphere direction of easy axis;

Step 6: to above-mentioned three magnetosensitive detector film GMR or the little processing of TMR magnetic Nano multi-layer film structure process; Be processed into GMR or TMR magnetosensitive detector cells, constitute three dimensions magnetosensitive integrated in the face and survey three dimensions magnetosensitive survey device integrated in face of device formation.

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