CN102804340B - Metal organic chemical vapor deposition equipment - Google Patents
Metal organic chemical vapor deposition equipment Download PDFInfo
- Publication number
- CN102804340B CN102804340B CN201080063854.4A CN201080063854A CN102804340B CN 102804340 B CN102804340 B CN 102804340B CN 201080063854 A CN201080063854 A CN 201080063854A CN 102804340 B CN102804340 B CN 102804340B
- Authority
- CN
- China
- Prior art keywords
- reaction chamber
- substrate
- chamber
- plate
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 19
- 229910052751 metal Inorganic materials 0.000 title claims description 19
- 239000002184 metal Substances 0.000 title claims description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 233
- 239000000758 substrate Substances 0.000 claims abstract description 158
- 238000000034 method Methods 0.000 claims abstract description 102
- 230000008569 process Effects 0.000 claims abstract description 64
- 230000005540 biological transmission Effects 0.000 claims abstract description 29
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 72
- 239000012298 atmosphere Substances 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 239000012044 organic layer Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 24
- 229910002601 GaN Inorganic materials 0.000 description 56
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 45
- 239000007789 gas Substances 0.000 description 36
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 29
- 229910002704 AlGaN Inorganic materials 0.000 description 26
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 25
- 229910052739 hydrogen Inorganic materials 0.000 description 20
- 239000001257 hydrogen Substances 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 16
- 229910021529 ammonia Inorganic materials 0.000 description 14
- 239000011777 magnesium Substances 0.000 description 13
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 10
- 238000000137 annealing Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 8
- 238000001816 cooling Methods 0.000 description 8
- 229910052749 magnesium Inorganic materials 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 230000002411 adverse Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 gallium nitride (GaN) compound Chemical class 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
On substrate in film forming process, need a kind of chemical vapor depsotition equipment to improve process efficiency and to form the film of high-quality.For this reason, chemical vapor depsotition equipment according to the present invention comprises: multiple reaction chamber, and substrate to be entered in described reaction chamber by gate and processes the described substrate on the upper surface of the substrate support be layered in described reaction chamber; Cushion chamber, connects described multiple reaction chamber, from described multiple reaction chamber, take out substrate, and makes described substrate through described buffer, to enter another reaction chamber in described multiple reaction chamber; Heater, is arranged in described multiple reaction chamber or described cushion chamber; Gas supply device, for described multiple reaction chamber supplying process gas; First direction transmission unit, for being transferred to described cushion chamber by the plate being laminated with described substrate above from described reaction chamber or being transferred to described reaction chamber from described cushion chamber; And second direction transmission unit, for will be arranged in described multiple reaction chamber a certain gate before described plate or another location before described substrate transport to another gate of described multiple reaction chamber.
Description
Technical field
The present invention relates to a kind of substrate-treating apparatus, more specifically, relate to a kind of chemical vapor depsotition equipment.
Background technology
Generally speaking, light-emitting diode (LED) has the structure of sequentially stacked n-layer, active layer and p-type layer.Forming one of method of n-layer, active layer and p-type layer is Metalorganic Chemical Vapor Deposition.Metalorganic Chemical Vapor Deposition is towards described by the substrate metal injection organic compound gas that heats chemical reaction occurred for the substrate surface that heats thus form the method for required film on described substrate surface.
For traditional Metalorganic Chemical Vapor Deposition, in a reaction chamber, perform the institute of formation n-layer, active layer and p-type layer in steps.But the problem of the method is that deposition process needs the time of costing a lot of money.
The reason of this problem is, because atmosphere temperature required and required in the step of depositing layers is different, therefore raises or be reduced to temperature required period or during the required atmosphere of control, each step must be suspended and wait in temperature.
Other reaction chamber reason of this problem is, must clear up chamber interior and whole manufacture process is suspended in cleanup step after completing a certain process.
Summary of the invention
Technical problem
On substrate in film forming process, need a kind ofly can improve process efficiency and form the Method of processing a substrate of high quality thin film.
Technical purpose of the present invention is not limited to above-mentioned purpose, and from following description, does not also describe other technical purpose above and will become obvious to those skilled in the art.
Technical scheme
For reach above object according to chemical vapor depsotition equipment of the present invention, comprise: multiple reaction chamber, be configured to by gate, substrate entered in described reaction chamber and process the described substrate on the upper surface of the substrate support be loaded in described reaction chamber; Cushion chamber, is configured to couple with described multiple reaction chamber and when described substrate is removed from any one described multiple reaction chamber, when being then admitted to another reaction chamber in described multiple reaction chamber, makes described substrate through described cushion chamber; Heater, is arranged in described multiple reaction chamber or described cushion chamber; Gas supply device, is configured to described multiple reaction chamber supplying process gas; First direction transmission unit, is configured to the plate being mounted with described substrate is above transferred to described cushion chamber from described reaction chamber or be transferred to described reaction chamber from described cushion chamber; And second direction transmission unit, be configured to the described plate before the gate of any one that is placed in described multiple reaction chamber or described substrate transport to another the gate in described multiple reaction chamber.
In addition, described multiple reaction chamber can be arranged as a row.
In addition, described first direction transmission unit can comprise actuating unit, and described actuating unit to be positioned at outside described cushion chamber and to be configured to described plate is transferred to described cushion chamber from described reaction chamber or be transferred to described reaction chamber from described cushion chamber.
In addition, described actuating unit can comprise the multiple actuators equal with the quantity of described reaction chamber, and described plate can couple with each described actuator.
In addition, described second direction transmission unit can comprise to be positioned within described cushion chamber or outside robots arm, thus by be loaded in multiple described plate any one on substrate transport to another in multiple described plate.
In addition, described plate can comprise conveyer unit, and this conveyer unit removably couples with described actuator and is configured to before the gate of any one being arranged in described multiple reaction chamber and the described plate be separated with described actuator is transferred to another gate of described multiple reaction chamber.
In addition, described second direction transmission unit may further include the actuator transfer unit for transmitting described actuating unit, thus before the described plate before the gate of any one being arranged in described multiple reaction chamber is placed on another gate of described multiple reaction chamber.
In addition, described first direction transmission unit can comprise and is arranged in described cushion chamber and the roller unit coupled with described plate, described plate is transferred to described cushion chamber from described reaction chamber or is transferred to described reaction chamber from described cushion chamber.
In addition, described second direction transmission unit can comprise robots arm, this robots arm to be arranged in outside described cushion chamber and to be configured to catch the described substrate on the plate that is loaded onto and is positioned at before any one gate of described multiple reaction chamber, and by the plate before described substrate transport to another the gate being arranged in described multiple reaction chamber.
In addition, described second direction transmission unit may further include the robots arm be positioned at outside described cushion chamber and transmits rail, thus slides and transmit described robots arm.
In addition, described second direction transmission unit may further include the robots arm be positioned at outside described cushion chamber and transmits rail, thus slides and transmit described robots arm.
In addition, multiple described substrate can be loaded on pedestal, and described pedestal can be loaded on described plate, thus transmit multiple described substrate.
In addition, may further include lifting unit, described lifting unit is positioned at described reaction chamber or described cushion chamber and is configured to substrate described in lifting, thus is loaded on described plate by described substrate.
In addition, described process gas can comprise III element and V group element.
In addition, described III element can comprise at least one in aluminium (Al), gallium (Ga) and indium (In).
Beneficial effect
Owing to using multiple reaction chamber, therefore process efficiency can be improved.Such as, if manufacture gallium nitride (GaN) compound semiconductor, then the suitable temperature of each process steps can be different.After controlling the temperature in each reaction chamber in advance with suitable temperature, substrate is sent into reaction chamber, and immediately substrate is processed.Therefore the time that control temperature spends can be reduced.
In addition, the cushion chamber membrane quality deterioration that can prevent from being caused by temperature jump.In other words, when the substrate completing process is in the reactor chamber fetched to cushion chamber, the temperature of cushion chamber can be controlled, thus make the temperature close in itself and the first reaction chamber.
Or, if control the temperature in cushion chamber in advance with the temperature needed for the process of next step, then can reduce the time controlling underlayer temperature and spend in the reaction chamber of the process by carrying out next step.
In addition, when cleaning reaction chamber is inner after completing arbitrary process, substrate can be sent into another reaction chamber and next process is performed to substrate, and not need to suspend.Therefore, process time can be reduced.
In addition, owing to can perform various process respectively in multiple reaction chamber simultaneously, the output of unit interval can therefore be increased.
Technique effect of the present invention is not limited to above effect, and from the following description, those skilled in the art are obviously appreciated that above other technique effect do not described.
Accompanying drawing explanation
Fig. 1 is the schematic plan view of the first embodiment of chemical vapor depsotition equipment according to execution Method of processing a substrate of the present invention;
Fig. 2 is the schematic cross sectional views of the A-A ' section of the chemical vapor depsotition equipment of Fig. 1;
Fig. 3 is the schematic plan view of the second embodiment of chemical vapor depsotition equipment according to execution Method of processing a substrate of the present invention;
Fig. 4 is the schematic plan view of the 3rd embodiment of chemical vapor depsotition equipment according to execution Method of processing a substrate of the present invention;
Fig. 5 is the schematic plan view of the 4th embodiment of chemical vapor depsotition equipment according to execution Method of processing a substrate of the present invention;
Fig. 6 is the schematic plan view of the 5th embodiment of chemical vapor depsotition equipment according to execution Method of processing a substrate of the present invention;
Fig. 7 is that diagram utilizes the flow chart comprising the Method of processing a substrate of the chemical vapor depsotition equipment of 9 reaction chambers;
Fig. 8 is that diagram utilizes the flow chart comprising the Method of processing a substrate of the chemical vapor depsotition equipment of 6 reaction chambers;
Fig. 9 is that diagram utilizes the flow chart comprising the Method of processing a substrate of the chemical vapor depsotition equipment of 3 reaction chambers.
Embodiment
Below, embodiments of the invention are described in detail with reference to the accompanying drawings.But, the invention is not restricted to disclosed embodiment, but can realize in every way.There is provided the present embodiment to make disclosure of the present invention complete and to make those of ordinary skill in the art understand scope of the present invention.In order to outstanding clearer description, the shape etc. of element in accompanying drawing can be amplified.In all of the figs, identical Reference numeral represents identical parts.
Fig. 1 is the schematic plan view of the first embodiment of chemical vapor depsotition equipment according to execution Method of processing a substrate of the present invention.
As shown in Figure 1, reaction chamber 1100, cushion chamber 1200, transmitting device, gas supply unit 1400, power subsystem 1500 and control unit 1600 is comprised according to the chemical vapor depsotition equipment of the first embodiment.
First, transmitting device is described in detail.Transmitting device can comprise substrate supply/discharger 1310, first pick device 1320, actuating unit 1330, robots arm 1340, first plate 1350a, the second plate 1350b, the 3rd plate 1350c and the second pick device 1370.
More specifically, substrate supply/discharger 1310 is instruments that the substrate W of wafer format is fed to yard (workshop) or is discharged to by substrate outside yard, and can be set to conveyer, transferring robot, pickup robot or linear actuators.
First pick device 1320 is the instruments be loaded into by substrate W on the upper surface of pedestal S, and can be transferring robot or pickup robot.As another embodiment, the first pick device 1320 can be utilized directly to be loaded on plate by substrate, and substrate not to be loaded on pedestal.
Actuating unit 1330 comprises the first actuator 1331, second actuator 1332 and the 3rd actuator 1333.First plate 1350a, the second plate 1350b and the 3rd plate 1350c can be transferred to cushion chamber 1200 from reaction chamber 1100 or be transferred to reaction chamber 1100 from cushion chamber 1200 by the first actuator 1331, second actuator 1332 and the 3rd actuator 1333 respectively.
First plate 1350a, the second plate 1350b and the 3rd plate 1350c can be each plates that can be mounted with substrate or pedestal above.Can arrange recess or hole in each in the first plate 1350a, the second plate 1350b and the 3rd plate 1350c, lifting unit 1380 can be moved up and down by this recess or hole, thus the substrate that can raise on the upper surface being loaded into described plate or pedestal.
Robots arm 1340 can catch pedestal S, enters cushion chamber 1200, and is placed on by pedestal on the upper surface of the first plate 1350a.In addition, robots arm 1340 can by the base station that is loaded on the upper surface of the first plate 1350a to the second plate 1350b in cushion chamber 1200, and can by the base station that is loaded on the upper surface of the second plate 1350b to the 3rd plate 1350c.
Lifting unit 1380 is for raising and reducing the component of pedestal and can be arranged in cushion chamber.Robots arm 1340 enters cushion chamber, then while lifting unit 1380 rises, lifts pedestal S.In addition, when robots arm 1340 from cushion chamber out time, lifting unit 1380 declines and is placed on plate 1350a, 1350b and 1350c by pedestal S.
When opening cushion chamber gate valve 1214, robots arm 1340 can pass cushion chamber gate 1213, then enters cushion chamber 1200.In addition, the pedestal being arranged in the first plate 1350a can be transferred to the second plate 1350b or the 3rd plate 1350c.The structure of transmitting device is not limited to embodiment described below and can improves in every way, thus makes transmitting device substrate can be sent into or send multiple reaction chamber and cushion chamber.
Below, gas supply unit 1400 is described in detail.Gas supply unit 1400 comprises hydrogen feeding unit 1410, nitrogen supply (NS) unit 1420, ammonia (NH
3) feeding unit 1430, silane (SiH
4) feeding unit 1440, trimethyl gallium (trimethylgallium, TMG) feeding unit 1450, trimethyl indium (tri-methyl-indium, TMI) feeding unit 1460, two luxuriant magnesium (bis-cyclopentadienyl-magnesium, Cp
2mg) feeding unit 1470 etc.
Hydrogen feeding unit 1410, nitrogen supply (NS) unit 1420 and ammonia feeding unit 1430 can by hydrogen (H
2), nitrogen (N
2) and ammonia (NH
3) be fed to cushion chamber 1200, first reaction chamber 1100, second reaction chamber 1120 and the 3rd reaction chamber 1130 respectively.As another embodiment, the embodiment comprising the feeding unit for supplying other V race gas except ammonia is feasible.
Silane (SiH
4) feeding unit 1440 can by silane (SiH
4) be fed to reaction chamber 1100.As another embodiment, comprise for supply except SiH
4outside the embodiment of feeding unit of other N-shaped impurity gas (such as comprising the gas of Ge and Sn) be feasible.
Trimethyl gallium can be fed to reaction chamber 1100 by trimethyl gallium feeding unit 1450.As another embodiment, the embodiment comprising the feeding unit for supplying other III gas except trimethyl gallium is feasible.
Trimethyl indium can be fed to reaction chamber 1100 by trimethyl indium feeding unit 1460.As another embodiment, the embodiment comprising the feeding unit for supplying other III gas except trimethyl indium is feasible.As another embodiment, if comprise the process forming AlGaN layer, then the feeding unit for supplying the trimethyl aluminium (tri-methyl-aluminum, TMA) as III gas can be set further.
Cp
2mg feeding unit 1470 can by two luxuriant magnesium (Cp
2mg) reaction chamber 1100 is fed to.As another embodiment, comprise for supply except Cp
2other p-type impurity gas (such as comprising the gas of Zn, Ca and Be) outside Mg gas (containing magnesium (Mg)) is feasible as the embodiment of the feeding unit of p-type impurity gas.
Power subsystem 1500 can provide electric energy to reaction chamber 1100 or cushion chamber 1200.Power subsystem 1500 comprises the first power subsystem 1510, second source unit 1520 and the 3rd power subsystem 1530.
Control unit 1600 can control reaction chamber 1100, cushion chamber 1200, transmitting device, gas supply unit 1400 and power subsystem 1500.
Below, reaction chamber 1100 is described in detail.Reaction chamber 1100 comprises the first reaction chamber 1110, second reaction chamber 1120 and the 3rd reaction chamber 1130 that are arranged as a row.The quantity of reaction chamber is not necessarily limited to 3, but can be 2 to 9 or larger.
Pedestal S is sent in the first reaction chamber 1110 by the first reaction chamber gate 1115.The rotary unit (1112 of Fig. 2) that upper surface is mounted with pedestal is installed in the first reaction chamber 1110.As another embodiment, upper surface is mounted with pedestal but non-rotary base support can be installed in the first reaction chamber 1110.
The process that substrate is heat-treated can be performed in the first reaction chamber 1110.The mixed-gas atmosphere of hydrogen atmosphere or such as hydrogen and nitrogen can be formed in the first reaction chamber 1110 by gas supply unit 1400.By utilizing heater (not shown) to control at about 1000 to 1200 DEG C by the temperature in the first reaction chamber 1110, the foreign matter layer of the oxide-film on such as substrate can be removed.
In addition, the process of growing GaN resilient coating can be performed in the first reaction chamber 1110.Can form hydrogen atmosphere in the first reaction chamber 1110 by gas supply unit 1400, and trimethyl gallium (TMG) and ammonia gas can be inputted the first reaction chamber 1110 by gas supply unit 1400.In addition, substrate or pedestal can be heated to about 450 DEG C to 700 DEG C by heater, more specifically, about 500 DEG C to 600 DEG C.Can growing GaN resilient coating on the upper surface being experienced heat treated substrate by this process.
As another embodiment, resilient coating can be the AlN layer comprising aluminium (Al) element and nitrogen (N) element.As another embodiment, if active layer comprises InAlGaN, then resilient coating can comprise AlGaN layer.
In addition, the process of the unadulterated GaN layer of growth can be performed in the first reaction chamber 1110 after growing GaN resilient coating.As another embodiment, the process of the unadulterated InGaN layer of growth or unadulterated AlGaN layer can be performed in the first reaction chamber 1110.Heat the inside of the first reaction chamber 1110, thus make substrate temperature become about 1000 DEG C to 1200 DEG C, more specifically, about 1030 DEG C to 1080 DEG C, unadulterated GaN layer can be grown.The process of grown buffer layer and unadulterated GaN layer can improve electrical efficiency and the epitaxial growth efficiency of GaN film on a sapphire substrate.
In addition, the process of growing n-type GaN layer (doping Si or Ge) on the upper surface of unadulterated GaN layer can be performed in the first reaction chamber 1110.Can form hydrogen atmosphere in the first reaction chamber 1110 by gas supply unit 1400, and trimethyl gallium (TMG) and ammonia can be input to the first reaction chamber 1110 by gas supply unit 1400.In addition, by additionally inputting silane (SiH
4) or germane (GeH
4) can adulterate Si or Ge.In addition, substrate or pedestal can be heated to about 1000 to 1200 DEG C by heater.By this process can on the upper surface of GaN layer growing n-type GaN layer.
As another embodiment, n-type GaN layer can have the stepped construction of n-GaN/n-AlGaN/n-InGaN.In addition, as another embodiment, n-layer can have the stepped construction of such as n-GaN/n-AlGaN, n-GaN/n-AlGaN/n-GaN or n-GaN/n-InGaN/n-AlGaN/n-GaN.Utilize the vapor deposition processes in differential responses chamber can form n-layer in the substrate.In addition, as another embodiment, if active layer comprises InAlGaN, then n-layer can comprise n-AlGaN layer.
The process of growth active layer can be performed in the second reaction chamber 1120.Nitrogen (N can be formed in the reactor chamber by gas supply unit 1400
2) atmosphere, and trimethyl gallium (TMG), trimethyl indium (TMI) and ammonia can be input to reaction chamber 1200 by gas supply unit 1400.In addition, the temperature of substrate or pedestal can be controlled at about 700 DEG C to 900 DEG C by heater.Active layer can be single quantum well (Single Quantum Well, SQW) layer or Multiple Quantum Well (Multi-Quantum Well, the MQW) layer with multiple quantum well.In other words, by barrier layer that repeatedly alternately stacked indium (In) is different with gallium (Ga) content and quantum well layer, mqw layer can be formed.By this process, active layer can be grown on the upper surface of n-type GaN layer.Active layer can have the structure of such as InGaN QW, InGaN/GaN QW, InGaN/AlGaN QW, InGaN/InGaN QW, GaN/AlGaN QW or InAlGaN/InAlGaN QW.
The process of growth p-type GaN layer (doped with Mg) can be performed in the 3rd reaction chamber 1130.Can form hydrogen atmosphere in the 3rd reaction chamber 1130 by gas supply unit 1400, and gas supply unit 1400 can by trimethyl gallium (TMG), two luxuriant magnesium (Cp
2mg) and ammonia be input to the 3rd reaction chamber 1130.In addition, the temperature of substrate or pedestal can be controlled at about 900 DEG C to 1200 DEG C by heater (not shown).By this process, p-type GaN layer can be grown on the upper surface of active layer.P-type GaN layer can have the stepped construction of such as p-AlGaN/p-GaN, p-AlGaN/p-GaN/p-AlGaN/p-GaN or p-GaN/p-AlGaN/p-GaN.If increase the process of growth AlGaN layer, then gas supply unit can be used for hydrogen, III gas (trimethyl aluminium (TMA)) and the V race gas that should be formed needed for AlGaN layer.
According to another embodiment, annealing process can be performed in the 3rd reaction chamber 1130.Such as, when the temperature in reaction chamber remains on 600 to 900 DEG C, the film that can be formed in prior process performs annealing.As another embodiment, cooling procedure can be performed after the annealing process, or can only perform cooling procedure and not perform annealing process.As another embodiment, low-energy electron beam radiation treatment process instead of annealing process can be performed in the 3rd reaction chamber.As another embodiment, also annealing process can be performed in cushion chamber 1200.
Then, cushion chamber 1200 is described in detail.Cushion chamber 1200 is couple to multiple reaction chamber 1100, and as the passage passed when pedestal sends into other reaction chamber after being removed from arbitrary reaction chamber.Before taking out pedestal from the first reaction chamber 1110, the temperature of cushion chamber 1200 can be controlled in advance, thus make the temperature of cushion chamber 1200 and the temperature close of the first reaction chamber 1110 and the second reaction chamber 1120.In other words, perform heat treatment process in the first reaction chamber 1110 before, can the temperature in cushion chamber 1200 be controlled at about 500 to 1200 DEG C in advance, more specifically, about 600 to 900 DEG C.Therefore, the time spent with the heating temperatures substrate needed for heat treatment process can be reduced.Under hydrogen atmosphere or nitrogen atmosphere, the inside of cushion chamber 1200 can be controlled in advance by hydrogen feeding unit 1410 and nitrogen supply (NS) unit 1420.
Fig. 2 illustrates the schematic cross sectional views of the A-A ' section of the chemical vapor depsotition equipment of Fig. 1.
As illustrated in fig. 1 and 2, when opening cushion chamber gate valve 1214, the first actuator 1331 is through cushion chamber gate 1213, and therefore the first plate 1350a is admitted to cushion chamber 1200.In addition, pedestal S is loaded in the first plate 1350a in cushion chamber by robots arm 1340.
If perform at about 1200 DEG C the process forming n-type GaN layer in arbitrary reaction chamber, then the temperature of cushion chamber 1200 can be controlled in advance at about 500 to 1200 DEG C, thus reduce the thermal shock to substrate when taking out substrate from reaction chamber 1100.In addition, the gas atmosphere in cushion chamber 1200 can be controlled in a hydrogen atmosphere.
After process in the first reaction chamber completes, the lifting unit 1119 be arranged in rotary unit 1112 raises and lifting is loaded into the pedestal on the upper surface of rotary unit 1112.In addition, the first plate 1350a is admitted to the first reaction chamber 1110, is then placed between rotary unit 1112 and pedestal S.In addition, when lifting unit 1119 declines, pedestal S is loaded onto on the first plate 1350a, and the first plate is output to cushion chamber 1200.
When being arranged on the first reaction chamber the first reaction chamber gate valve 1116 taken out in passage 1110a and opening, the first plate 1350a can pass the first reaction chamber gate 1115, is then transferred to cushion chamber 1200 from the first reaction chamber 1110.
Lifting unit 1380 on the upper surface of strutting piece 1351 can raise, thus robots arm 1340 can be caught be transferred to the pedestal S(of cushion chamber 1200 to see Fig. 1).When lifting unit 1380 raise between the recess of plate and lifting pedestal S time, robots arm 1340 catches pedestal S.In addition, pedestal is loaded onto on the second plate 1350b of being positioned at before the second reaction chamber gate 1125.
The heater 1203 being used for temperature in cushion chamber being controlled at about 600 to 900 DEG C is installed in cushion chamber 1200.Heater 1203 can be lamp heater or RF heater.
For being arranged in the first reaction chamber 1110 towards the spray head 1111 of pedestal inject process gas.Heater (not shown) for heating base can be arranged in rotary unit 1112.Motor 1114 can rotating base S and rotary unit 1112.Pedestal S can be separated with the rotary unit 1112 at pivot 1113 top or combine.
Fig. 3 is the schematic plan view of the second embodiment of chemical vapor depsotition equipment according to execution Method of processing a substrate of the present invention.Omit the description repeated with first embodiment of Fig. 1.Second embodiment comprises 3 reaction chambers and to transmit the method for pedestal different from the first embodiment.
As shown in Figure 3, actuating unit 2330 comprises actuator 2331, actuator transfer motor 2332 and brake transmission rail 2333.
Actuator 2331 is couple to actuator transfer rail 2333 slidably.Actuator transfer motor 2332 makes actuator 2331 can slide along actuator transfer rail 2333.
By actuator 2331 by pedestal S from after the first reaction chamber 2110 is fetched into cushion chamber 2200, actuator transfer motor 2332 movement actuator 2331, thus pedestal S is placed on before the second cushion chamber.When movement actuator 2331, pedestal S is also placed in cushion chamber 2200 by transmission pedestal S.Therefore, an actuator is only utilized just substrate can be sent into reaction chamber 2100 or cushion chamber 2200.
Fig. 4 is the schematic plan view of the 3rd embodiment of chemical vapor depsotition equipment according to execution Method of processing a substrate of the present invention.Omit the description repeated with the first embodiment and the second embodiment.3rd embodiment comprises 4 reaction chambers and to transmit the method for pedestal different with the second embodiment from the first embodiment.
As shown in Figure 4, transmitting device can comprise the first robots arm 3706, first robots arm and transmits rail 3705, second robots arm 3708, second robots arm and transmit rail 3707, first plate 3702a, the second plate 3702b, the 3rd plate 3702c, the 4th plate 3702d and roller unit 3701.
Second robots arm 3708 can receive untreated substrate W from substrate feeding unit 3801, and pickup substrate, is then loaded into substrate on pedestal.Second robots arm 3708 is couple to the second robots arm in the mode of movement slidably and transmits rail 3707.Second robots arm 3708 close to the pedestal being arranged in pedestal retrieval unit 3803, can pick up treated substrate, and by treated substrate transport to substrate retrieval unit 3804.
First robots arm 3706 picks up pedestal (substrate is loaded into this pedestal from pedestal feeding unit 3802), pedestal is sent into cushion chamber 3200, and is loaded into by pedestal on the first plate 3702a.When treated pedestal is fetched into cushion chamber from the 4th reaction chamber 3140, the first robots arm 3706 picks up the pedestal be loaded onto on the 4th plate 3702d, and pedestal is fetched into outside, and by base station to pedestal retrieval unit 3803.
Roller unit 3701 to be arranged in cushion chamber 3200 and can to rotate at its setting position place, thus the first plate 3702a can roll and transmission towards the first reaction chamber.Roller unit 3701 comprises a rotatable rollers or multiple rotatable rollers.Roller and plate can be combined by gear wherein and be configured to transmit described plate.
Fig. 5 is the schematic plan view of the 4th embodiment of chemical vapor depsotition equipment according to execution Method of processing a substrate of the present invention.Omit the description repeated with the first to the 3rd embodiment.4th embodiment comprises 4 reaction chambers and to transmit the method for pedestal different from the first to the 3rd embodiment.
As shown in Figure 5, transmitting device can comprise substrate supply/discharger 4310, first pick device 4320, first actuator 4331, second actuator 4332, the 3rd actuator 4333, the 4th actuator 4334, first plate 4350a, the second plate 4350b, the 3rd plate 4350c, the 4th plate 4350d, the first robots arm 4340, second robots arm 4360a, the 3rd robots arm 4360b, the 4th robots arm 4360c and the second pick device 4370.
The pedestal be loaded on the upper surface of the first plate 4350a can be transferred to the upper surface of the second plate 4350b by the second robots arm 4360a in cushion chamber 4200.Under being installed in each plate for the lifting unit 4380 raised or reduce substrate or pedestal.Therefore, when lifting unit 4380 rises the pedestal be loaded on the upper surface of the first plate 4350a, the second robots arm 4360a can enter between pedestal and the first plate 4350a.Then, when lifting unit 4380 reduces pedestal, pedestal is placed on the upper surface of the second robots arm 4360a.The pedestal be loaded on the upper surface of the second plate 4350b can be transferred to the 3rd plate 4350c by the 3rd robots arm 4360b in cushion chamber 4200.Preferably, the second device robot arm 4360b can be made up of heat proof material to the 4th robots arm 4360d, even if thus also stably can operate them the temperature of about 1000 DEG C.
Cushion chamber 4200 is equipped with the first cushion chamber gate 4213, first cushion chamber gate valve 4214, second cushion chamber gate 4223 and the second cushion chamber gate valve 4224.
Fig. 6 is the schematic plan view of the 5th embodiment of chemical vapor depsotition equipment according to execution Method of processing a substrate of the present invention.5th embodiment comprises 6 reaction chambers and to transmit the method for pedestal different from first to fourth embodiment.
As shown in Figure 6, transmitting device comprises substrate supply/discharger 5310, first pick device 5320, actuator 5330, multiple plate 5340 and the second pick device 5360.Actuator 5330 comprises the first to the 6th actuator 5331,5332,5333,5334,5335 and 5336.
Plate 5340 can be attached to actuator 5330 or pull down from actuator 5330.When plate 5340 is loaded onto on plate transmission unit 5350, when being then separated with actuator 5330, plate transmission unit 5350 is in the horizontal direction towards another reaction chamber transmission board 5340 and pedestal S.Plate transmission unit 5350 can be the device of conveyer belt or similar conveyer belt.Coupling device (not shown) can be arranged on the end of the bar of actuator 5330, thus makes plate 5340 be combined with each other with actuator 5330 or be separated.Therefore, when taking out plate after the process in arbitrary reaction chamber completes, control signal is sent to coupling device, therefore plate 5340 and actuator 5330 separated from one another.
The following describes according to Method of processing a substrate of the present invention.
Fig. 7 is that diagram utilizes the flow chart comprising the Method of processing a substrate of the chemical vapor depsotition equipment of 9 reaction chambers.The film formed by this method is formed by resilient coating/unadulterated GaN layer/n-type GaN layer/N-shaped AlGaN layer/active layer/p-type AlGaN layer/p-type GaN layer.Except the method shown in Fig. 7, can improve and supplement the process kind that can perform in each reaction chamber, and multiple process can be performed in arbitrary reaction chamber.
As shown in Figure 7, first, step S101 substrate being sent into the first reaction chamber is performed.Then, perform in the first reaction chamber the step S102 that substrate is heat-treated.The mist of hydrogen or hydrogen and nitrogen can be supplied in the first reaction chamber, and can be removed the foreign matter layer of the oxide-film on such as substrate by heating (such as about 1200 DEG C) substrate or pedestal.
Then, perform and substrate is fetched into cushion chamber from the first reaction chamber, then substrate is sent into the step S103 of the second reaction chamber.In cushion chamber, in predetermined temperature heated substrate in advance, thus do not produce temperature jump in the substrate.
Then, the step S104 forming resilient coating in the second reaction chamber on substrate is performed.In other words, hydrogen, trimethyl gallium (TMG) and ammonia are input in the second reaction chamber, and at predetermined temperature (such as about 600 DEG C) heated substrate or pedestal.By this process, can on the upper surface of the substrate of having heat-treated growing GaN resilient coating.
Then, perform and substrate is fetched into cushion chamber from the second reaction chamber and substrate is sent into the step S105 of the 3rd reaction chamber.
Then, the step S106 forming unadulterated GaN layer in the 3rd reaction chamber is in the substrate performed.Hydrogen (H is sprayed in the 3rd reaction chamber
2), trimethyl gallium (TMG) and ammonia (NH
3), and heated substrate or pedestal are to about such as 1200 DEG C.By this process, unadulterated GaN layer can be grown on the upper surface of GaN resilient coating.
Then, perform and substrate is fetched into cushion chamber from the 3rd reaction chamber and substrate is sent into the step S107 of the 4th reaction chamber.
Then, the step S108 forming n-type GaN layer in the 4th reaction chamber is in the substrate performed.In other words, in the 4th reaction chamber, hydrogen (H is sprayed
2), trimethyl gallium (TMG), ammonia (NH
3) and SiH
4, and heated substrate or pedestal are to about such as 1200 DEG C.By this process, growing n-type GaN layer (doping Si) on the upper surface of unadulterated GaN layer.
Then, perform and substrate is fetched into cushion chamber from the 4th reaction chamber and substrate sent into the step S109 the 5th reaction chamber.In cushion chamber, in predetermined temperature heated substrate, thus do not produce temperature jump in the substrate.Heating-up temperature can be set to about 500 to 1200 DEG C and environmentally can be set to about 700 DEG C.
Then, the step S110 forming N-shaped AlGaN layer in the 5th reaction chamber is in the substrate performed.By by SiH
4, trimethyl aluminium, trimethyl gallium, ammonia and hydrogen is fed in the 5th reaction chamber the AlGaN layer that can form doping Si.
Then, perform and substrate is fetched into cushion chamber from the 5th reaction chamber and substrate is sent into the step S111 of the 6th reaction chamber.
Then, the step S112 being formed with active layer in the 6th reaction chamber is in the substrate performed.In other words, in the 6th reaction chamber, nitrogen (N is sprayed
2), trimethyl gallium (TMG), trimethyl indium (TMI) and ammonia (NH
3), and the variable temperatures of substrate or pedestal is controlled at about 700 to 900 DEG C.
Then, perform and substrate is fetched into cushion chamber from the 6th reaction chamber and substrate is sent into the step S113 of the 7th reaction chamber.
Then, the step S114 forming p-type AlGaN layer in the 7th reaction chamber is in the substrate performed.In other words, by supply Cp
2mg, trimethyl aluminium, trimethyl gallium, ammonia and hydrogen can form the AlGaN layer of doped with Mg.
Then, perform and substrate is fetched into cushion chamber from the 7th reaction chamber and substrate is sent into the step S115 of the 8th reaction chamber.
Then, the step S116 forming p-type GaN layer in the 8th reaction chamber is in the substrate performed.Cp is sprayed in the 8th reaction chamber
2mg, trimethyl gallium, ammonia and hydrogen, and the variable temperatures of substrate or pedestal is controlled at about 1200 DEG C.By this process, the GaN layer of doped with Mg can be formed on the upper surface of active layer.If use Cp
2mg is as p-type impurity gas, then magnesium component to be attached to inside reaction chamber and magnesium component can have adverse effect to other process.Therefore, need to carry out cleaning.When cleaning the 8th reaction chamber, each process can be performed in remaining reaction chamber, and each process interrupt can not be made.
Then, perform and substrate is fetched into cushion chamber from the 8th reaction chamber and step S117 substrate being sent into the 9th reaction chamber.
Then, the step S118 carrying out annealing in the 9th reaction chamber is performed.In other words, when keeping nitrogen atmosphere state, controlling cavity temperature and being about 600 to 900 DEG C.As another embodiment, cooling procedure can be performed after anneal in the 9th reaction chamber, and can in the 9th reaction chamber, perform cooling procedure and not perform annealing.In addition, cooling procedure can be performed in cushion chamber.Cooling procedure can be the process of nature cooling substrate, such as about 100 to 300 DEG C.
Then, pedestal is fetched into outside, and the pick device substrate of pickup at pedestal top by substrate transport to substrate supply/discharger.
Fig. 8 is that diagram utilizes the flow chart comprising the Method of processing a substrate of the chemical vapor depsotition equipment of 6 reaction chambers.Although with reference to the example that Fig. 7 describes use 9 reaction chambers, the example of use 6 reaction chambers is described below.The film formed by this method is formed by resilient coating/n-type GaN layer/active layer/p-type GaN layer.
First, perform step S201 substrate being sent into the first reaction chamber, to the step S202 that substrate is heat-treated in the first reaction chamber, and substrate is fetched into cushion chamber from the first reaction chamber and substrate is sent into the step S203 of the second reaction chamber.
Then, perform the step S204 forming resilient coating in the second reaction chamber, and substrate is fetched into cushion chamber from the second reaction chamber and substrate is sent into the step S205 of the 3rd reaction chamber.
Then, perform the step S206 forming n-type GaN layer in the 3rd reaction chamber, and substrate is fetched into cushion chamber from the 3rd reaction chamber and substrate is sent into the step S207 of the 4th reaction chamber.
Then, perform the step S208 being formed with active layer in the 4th reaction chamber in the substrate, and substrate is fetched into cushion chamber from the 4th reaction chamber and substrate is sent into the step S209 the 5th reaction chamber.
Then, perform the step S210 growing p-type GaN layer in the 5th reaction chamber, and substrate is fetched into cushion chamber from the 5th reaction chamber and substrate is sent into the step S211 of the 6th reaction chamber.If use Cp
2mg is as p-type impurity gas, then magnesium component to be attached to inside reaction chamber and magnesium component can have adverse effect to other process.Therefore, need to carry out cleaning.When cleaning the 5th reaction chamber, each process can be performed in remaining reaction chamber, and each process interrupt can not be made.Then, the step S212 or cooling step that in the 6th reaction chamber, substrate are annealed is performed.
Simultaneously, if form more complicated stepped construction, the stepped construction such as formed by resilient coating/unadulterated GaN layer/n-type GaN layer/N-shaped AlGaN layer/active layer/p-type AlGaN layer/p-type GaN layer, then can use the chemical gaseous phase equipment comprising at least 6 reaction chambers.In other words, the step of the step forming resilient coating and the unadulterated GaN layer of formation can be performed in the second reaction chamber.In addition, the step of the step forming n-type GaN layer and formation N-shaped AlGaN layer can be performed in the 3rd reaction chamber.In addition, the step of the step forming p-type AlGaN layer and formation p-type GaN layer can be performed in the 5th reaction chamber.
Fig. 9 illustrates the flow chart utilizing and comprise the Method of processing a substrate of the chemical vapor depsotition equipment of 3 reaction chambers.Although describe the example of use 6 reaction chambers with reference to Fig. 8, the following example describing use 3 reaction chambers.The film formed by this method is formed by resilient coating/n-type GaN layer // active layer/p-type GaN layer.
First, perform step S301 substrate being sent into the first reaction chamber, and to the step S302 that substrate is heat-treated in the first reaction chamber.Then, perform and substrate is fetched into cushion chamber from the first reaction chamber, then substrate is sent into the step S303 of the second reaction chamber.
Then, perform the step S304 forming resilient coating in the second reaction chamber on substrate, form the step S305 of n-type GaN layer, and be formed with the step S306 of active layer.In addition, perform and substrate is fetched into cushion chamber from the second reaction chamber and substrate is sent into the step S307 of the 3rd reaction chamber.
Then, the step S308 growing p-type GaN layer in the 3rd reaction chamber and the step S309 carrying out annealing is performed.
As another embodiment, can perform in different reaction chambers the substrate step of heat-treating and the step forming resilient coating.By this process separately, the time temperature in reaction chamber being controlled to spend in the treatment temperature needed can be reduced, and the problem of next process of gases affect used in a upper process can be solved.
More than description and embodiments of the invention illustrated in the accompanying drawings should not be considered to limit technical spirit of the present invention.Scope of the present invention is only defined by the claims, and those skilled in the art can carry out various forms of improvement and amendment to technical spirit of the present invention.Therefore, these improve and revise will fall within the scope of the invention, as long as they are obvious for a person skilled in the art.
Claims (13)
1. a metal organic chemical vapor deposition equipment, comprising:
Multiple reaction chamber, to form metal organic layer by injection III metal gas and V race gas in chemical vapor deposition processes;
Cushion chamber, comprise the heater for controlling to predetermined temperature, and described cushion chamber is controlled to form predetermined gas atmosphere wherein, and couple with described multiple reaction chamber, thus when substrate is transferred to other the reaction chamber in described multiple reaction chamber from described multiple reaction chamber, described substrate is through described cushion chamber;
Transmission unit, be configured to enter described cushion chamber, then the pedestal being mounted with described substrate is above transferred to described cushion chamber from described multiple reaction chamber, then by described base station to other the reaction chamber in described multiple reaction chamber, then from described cushion chamber, take out described transmission unit;
Gas supply device, is configured to described multiple reaction chamber and described cushion chamber supplying process gas; And
First direction transmission unit, is configured to be transferred to described cushion chamber from described reaction chamber by being mounted with the plate of described substrate or pedestal above or being transferred to described reaction chamber from described cushion chamber;
Wherein, described first direction transmission unit to be placed in outside described cushion chamber and to be configured to described plate is transferred to described cushion chamber from described reaction chamber or be transferred to described reaction chamber from described cushion chamber.
2. metal organic chemical vapor deposition equipment according to claim 1, comprises further:
Second direction transmission unit, be configured to by be arranged in described multiple reaction chamber the gate of any one before plate or base station to the gate of other reaction chamber of described multiple reaction chamber.
3. metal organic chemical vapor deposition equipment according to claim 2,
Wherein, described first direction transmission unit comprises actuating unit, and described actuating unit is positioned at outside described cushion chamber.
4. metal organic chemical vapor deposition equipment according to claim 3,
Wherein, described actuating unit comprises the multiple actuators equal with the quantity of described reaction chamber, and described plate and each described actuator couple.
5. metal organic chemical vapor deposition equipment according to claim 4,
Wherein, described second direction transmission unit comprise to be positioned within described cushion chamber or outside robots arm, thus by be loaded in multiple described plate any one on substrate transport to other the plate in multiple described plate.
6. metal organic chemical vapor deposition equipment according to claim 4,
Wherein, multiple described plate and described actuator removably couple, and
Comprise conveyer unit further, this conveyer unit is configured to before the gate of any one being arranged in described multiple reaction chamber and the described plate be separated with described actuator is transferred to the gate of other reaction chamber of described multiple reaction chamber.
7. metal organic chemical vapor deposition equipment according to claim 3,
Wherein, described second direction transmission unit comprises the actuator transfer unit for transmitting described actuating unit further, thus is placed on before the gate of other reaction chamber of described multiple reaction chamber by the described plate before the gate of any one being arranged in described multiple reaction chamber.
8. metal organic chemical vapor deposition equipment according to claim 2,
Wherein, described first direction transmission unit comprises and is arranged in described cushion chamber and the roller unit coupled with described plate, described plate or described pedestal are transferred to described cushion chamber from described reaction chamber or are transferred to described reaction chamber from described cushion chamber.
9. metal organic chemical vapor deposition equipment according to claim 3,
Wherein, described second direction transmission unit comprises robots arm, this robots arm to be arranged in outside described cushion chamber and to be configured to catch the described substrate on the plate that is loaded onto and is positioned at before any one gate of described multiple reaction chamber, and by described substrate transport to be arranged in described multiple reaction chamber other reaction chamber gate before plate on.
10. metal organic chemical vapor deposition equipment according to claim 9,
Wherein, described second direction transmission unit comprises the robots arm be positioned at outside described cushion chamber further and transmits rail, thus slides and transmit described robots arm.
11. metal organic chemical vapor deposition equipment according to claim 2,
Wherein, multiple described substrate is loaded on pedestal, and described pedestal is loaded on described plate, thus transmit multiple described substrate.
12. metal organic chemical vapor deposition equipment according to claim 2,
Comprise lifting unit further, described lifting unit is positioned at described reaction chamber or described cushion chamber and is configured to substrate described in lifting, thus is loaded on described plate by described substrate.
13. metal organic chemical vapor deposition equipment according to claim 1, wherein, described III metal gas comprises at least one in aluminium (Al), gallium (Ga) and indium (In).
Applications Claiming Priority (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2009-0124224 | 2009-12-14 | ||
| KR1020090124226A KR101062459B1 (en) | 2009-12-14 | 2009-12-14 | Metal organic chemical vapor deposition apparatus and metal organic chemical vapor deposition method using the same |
| KR1020090124224A KR101062463B1 (en) | 2009-12-14 | 2009-12-14 | Metal organic chemical vapor deposition apparatus and metal organic chemical vapor deposition method using the same |
| KR10-2009-0124226 | 2009-12-14 | ||
| KR1020090124678A KR101075179B1 (en) | 2009-12-15 | 2009-12-15 | Apparatus for metal organic chemical vapor deposition and method using the same |
| KR10-2009-0124678 | 2009-12-15 | ||
| KR10-2009-0135707 | 2009-12-31 | ||
| KR1020090135714A KR101052889B1 (en) | 2009-12-31 | 2009-12-31 | Chemical Vapor Deposition Equipment |
| KR10-2009-0135714 | 2009-12-31 | ||
| KR1020090135707A KR101071249B1 (en) | 2009-12-31 | 2009-12-31 | Method for metal organic chemical vapor deposition |
| PCT/KR2010/004657 WO2011074753A1 (en) | 2009-12-14 | 2010-07-16 | Chemical vapor deposition apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102804340A CN102804340A (en) | 2012-11-28 |
| CN102804340B true CN102804340B (en) | 2015-07-29 |
Family
ID=44167494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080063854.4A Expired - Fee Related CN102804340B (en) | 2009-12-14 | 2010-07-16 | Metal organic chemical vapor deposition equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102804340B (en) |
| WO (1) | WO2011074753A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022268A (en) * | 2011-09-22 | 2013-04-03 | 理想能源设备(上海)有限公司 | Method for manufacturing silicon-based thin-film solar cell and device for manufacturing same |
| DE102013101777B4 (en) | 2013-02-22 | 2025-03-13 | Aixtron Se | Method and device for loading and unloading a CVD system |
| KR102568797B1 (en) * | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
| CN112670378A (en) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1841696A (en) * | 2005-02-07 | 2006-10-04 | 细美事有限公司 | Apparatus for processing substrate |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08195348A (en) * | 1995-08-28 | 1996-07-30 | Semiconductor Energy Lab Co Ltd | Semiconductor device manufacturing equipment |
| TW511169B (en) * | 2000-02-01 | 2002-11-21 | Tokyo Electron Ltd | Substrate processing apparatus and substrate processing method |
| US7918940B2 (en) * | 2005-02-07 | 2011-04-05 | Semes Co., Ltd. | Apparatus for processing substrate |
| KR20080090799A (en) * | 2007-04-06 | 2008-10-09 | 주식회사 하이닉스반도체 | Evaporation apparatus and method for forming semiconductor device using same |
| US20090194026A1 (en) * | 2008-01-31 | 2009-08-06 | Burrows Brian H | Processing system for fabricating compound nitride semiconductor devices |
-
2010
- 2010-07-16 CN CN201080063854.4A patent/CN102804340B/en not_active Expired - Fee Related
- 2010-07-16 WO PCT/KR2010/004657 patent/WO2011074753A1/en active Application Filing
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1841696A (en) * | 2005-02-07 | 2006-10-04 | 细美事有限公司 | Apparatus for processing substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102804340A (en) | 2012-11-28 |
| WO2011074753A1 (en) | 2011-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI461565B (en) | Metal organic chemical vapor deposition apparatus and method | |
| US8980657B2 (en) | Method for producing a group III nitride semiconductor light-emitting device | |
| EP3107128B1 (en) | Preparation method of a non-polar blue led epitaxial wafer based on lao substrate | |
| CN102804340B (en) | Metal organic chemical vapor deposition equipment | |
| CN106098871A (en) | A kind of preparation method of light-emitting diode epitaxial wafer | |
| US20120118227A1 (en) | Apparatus for forming layer | |
| CN114361302B (en) | Light-emitting diode epitaxial wafer, light-emitting diode buffer layer and preparation method thereof | |
| KR20110103503A (en) | MOCD device with satellite growth chambers for n-type and VII-type doping | |
| CN102884642A (en) | Substrate processing method | |
| KR101139691B1 (en) | Apparatus for metal organic chemical vapor deposition | |
| US9564552B2 (en) | Method for producing group III nitride semiconductor light-emitting device | |
| KR20110075185A (en) | Metal Organic Chemical Vapor Deposition System | |
| KR101100645B1 (en) | Chemical vapor deposition apparatus and chemical vapor deposition method using the same | |
| KR101078596B1 (en) | Method for metal organic chemical vapor deposition | |
| KR101062463B1 (en) | Metal organic chemical vapor deposition apparatus and metal organic chemical vapor deposition method using the same | |
| KR101071249B1 (en) | Method for metal organic chemical vapor deposition | |
| KR101133282B1 (en) | Apparatus for metal organic chemical vapor deposition | |
| KR101062459B1 (en) | Metal organic chemical vapor deposition apparatus and metal organic chemical vapor deposition method using the same | |
| KR101052889B1 (en) | Chemical Vapor Deposition Equipment | |
| KR20110078809A (en) | Metal Organic Chemical Vapor Deposition System | |
| KR101113700B1 (en) | Method for chemical vapor deposition | |
| KR101075179B1 (en) | Apparatus for metal organic chemical vapor deposition and method using the same | |
| KR20150124287A (en) | Method for manufacturing light emitting diode using silicon substrate | |
| KR20110075184A (en) | Metal Organic Chemical Vapor Deposition System | |
| KR20110078810A (en) | Metal Organic Chemical Vapor Deposition System |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150729 Termination date: 20170716 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |