CN103022268A

CN103022268A - Method for manufacturing silicon-based thin-film solar cell and device for manufacturing same

Info

Publication number: CN103022268A
Application number: CN2011102835168A
Authority: CN
Inventors: 胡兵
Original assignee: Ideal Energy Equipment Shanghai Ltd
Current assignee: Ideal Energy Equipment Shanghai Ltd
Priority date: 2011-09-22
Filing date: 2011-09-22
Publication date: 2013-04-03

Abstract

The invention discloses a method for manufacturing a silicon-based thin-film solar cell and a device for manufacturing the same, wherein the manufacturing method comprises the steps of: providing a substrate which comprises a transparent electrode layer; providing a chemical vapor deposition device which comprises a first treatment chamber; transporting the substrate to the first treatment chamber and forming a P type semiconductor layer on the transparent electrode layer; taking the substrate comprising the P type semiconductor layer out of the first treatment chamber and cleaning the first treatment chamber; transporting the substrate comprising the P type semiconductor layer to the first treatment chamber and forming an intrinsic semiconductor layer on the P type semiconductor layer; and forming an N type semiconductor layer on the intrinsic semiconductor layer. The manufacturing device comprises a loading chamber, a first treatment chamber, a vacuum transport chamber comprising a carrying manipulator and a control module. The method and the device provided by the invention are capable of eliminating pollution of the intrinsic semiconductor layer caused by the residue while forming the P type semiconductor layer at low cost and high efficiency.

Description

Silicon-based film solar cells manufacture method and manufacturing installation thereof

Technical field

The present invention relates to technical field of thin-film solar, relate in particular to a kind of silicon-based film solar cells manufacture method and manufacturing installation thereof.

Background technology

Thin-film solar cells is a kind of solar cell that forms at the photoelectric material of the substrates such as glass, metal or plastics deposition very thin (several microns to tens microns).Thin-film solar cells possess under the low light condition still can generate electricity, but the production process energy consumption is low and a series of advantages such as decrease raw material and manufacturing cost, has become study hotspot in recent years, its market development has a high potential.

In publication number is the Chinese patent application of CN101775591A a kind of amorphous silicon thin-film solar cell is disclosed, as shown in Figure 1.Described amorphous silicon thin-film solar cell comprises successively: glass substrate 10, transparent electrode layer 11, P type amorphous silicon layer 12, intrinsic amorphous silicon layer 13, N-type amorphous silicon layer 14, back electrode 18 and baffle 19, wherein P type amorphous silicon layer 12, intrinsic amorphous silicon layer 13 and amorphous silicon photovoltaic element of N-type amorphous silicon layer 14 common compositions.

Also there is a kind of microcrystalline silicon film solar cell in the prior art; with reference to shown in Figure 2; described microcrystalline silicon film solar cell comprises successively: glass substrate 10, transparent electrode layer 11, P type microcrystal silicon layer 15, intrinsic microcrystalline silicon layer 16, N-type microcrystal silicon layer 17, back electrode 18 and baffle 19, wherein P type microcrystal silicon layer 15, intrinsic microcrystalline silicon layer 16 and microcrystal silicon photovoltaic element of N-type microcrystal silicon layer 17 common compositions.

A kind of amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells have also been developed in the prior art, as shown in Figure 3, described amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells comprise successively: glass substrate 10, transparent electrode layer 11, amorphous silicon photovoltaic element, microcrystal silicon photovoltaic element, back electrode 18, baffle 19, and wherein said amorphous silicon photovoltaic element is made of jointly P type amorphous silicon layer 12, intrinsic amorphous silicon layer 13 and N-type amorphous silicon layer 14; Described microcrystal silicon photovoltaic element is made of jointly P type microcrystal silicon layer 15, intrinsic microcrystalline silicon layer 16 and N-type microcrystal silicon layer 17.

Below take amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells as example, the manufacture process of thin-film solar cells in the prior art is described.With reference to figure 3 and Fig. 4, Fig. 4 is the plan structure schematic diagram of amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells production equipment in the prior art.This equipment comprises for the manufacture of the amorphous silicon among Fig. 3 and crystalline/micro-crystalline silicon laminated thin-film solar cells: LOADED CAVITY 31 is used for loading the glass substrate 10 that comprises transparent electrode layer 11; Unloading chamber 32 is used for the glass substrate 10 that unloading comprises N-type microcrystal silicon layer 17; Amorphous silicon process chamber 33 is used for forming successively P type amorphous silicon layer 12, intrinsic amorphous silicon layer 13 and N-type amorphous silicon layer 14 on described transparent electrode layer 11; Microcrystal silicon process chamber 34 is used for forming successively P type microcrystal silicon layer 15, intrinsic microcrystalline silicon layer 16 and N-type microcrystal silicon layer 17 on described N-type amorphous silicon layer 14; Vacuum transmission chamber 35 connects respectively described LOADED CAVITY 31, unloading chamber 32, amorphous silicon process chamber 33 and microcrystal silicon process chamber 34, described vacuum transmission chamber 35 comprises: conveying robot 36, be used for to comprise that the glass substrate 10 of transparent electrode layer 11 transfers to amorphous silicon process chamber 33 from LOADED CAVITY 31, and the glass substrate 10 that will comprise N-type amorphous silicon layer 14 transfers to microcrystal silicon process chamber 34 from amorphous silicon process chamber 33, and will comprise that the glass substrate 10 of N-type microcrystal silicon layer 17 transfers to unloading chamber 32 from microcrystal silicon process chamber 34.There is valve 30 at the two ends in described LOADED CAVITY 31 and unloading chamber 32, and described amorphous silicon process chamber 33 is connected with the microcrystal silicon process chamber has valve 30 at an end that connects vacuum transmission chamber 35.

Described amorphous silicon process chamber 33 and microcrystal silicon process chamber 34 generally all are plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) device, Fig. 5 is the schematic diagram of an embodiment of PECVD device in the prior art.Described PECVD device mainly comprises: reaction chamber 103, top electrode 101, power supply 104 and bottom electrode 102, wherein top electrode 101 and bottom electrode 102 are positioned at reaction chamber 103, described top electrode 101 links to each other with described power supply 104, described bottom electrode 102 ground connection, reacting gas enters top electrode 101 by the air inlet (not shown) of reaction chamber 103, and by top electrode 101 gas uniform being distributed enters in the reaction chamber 103.The step that deposits described amorphous silicon photovoltaic element or described microcrystal silicon photovoltaic element at PECVD comprises: glass substrate 10 is placed on the bottom electrode 102; Pass into silane and hydrogen in reaction chamber 103, power supply 104 passes into radiofrequency signal with generation glow discharge and produces plasma to top electrode 101, thereby forms plasma between top electrode 101 and bottom electrode 102.Electronics in the plasma and silane generation chemical reaction are to form described amorphous silicon photovoltaic element or described microcrystal silicon photovoltaic element at glass substrate 10.

In conjunction with Fig. 3 and Fig. 4, the manufacture method of described amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells specifically comprises in the lump:

The first step provides glass substrate 10, and forms transparent electrode layer 11 at glass substrate 10;

Second step, the glass substrate 10 that will comprise transparent electrode layer 11 is loaded in the LOADED CAVITY 31, conveying robot 36 in the vacuum transmission chamber 35 transfers to this glass substrate 10 the amorphous silicon process chamber 33 from LOADED CAVITY 31, and deposition forms P type amorphous silicon layer 12, intrinsic amorphous silicon layer 13 and N-type amorphous silicon layer 14 successively on described transparent electrode layer 11;

The 3rd step, conveying robot 36 in the vacuum transmission chamber 35 will comprise that the glass substrate 10 of N-type amorphous silicon layer 14 transfers in the microcrystal silicon process chamber 34 from amorphous silicon process chamber 33, deposition forms P type microcrystal silicon layer 15, intrinsic microcrystalline silicon layer 16 and N-type microcrystal silicon layer 17 successively on described N-type amorphous silicon layer 14;

In the 4th step, the conveying robot 36 in the vacuum transmission chamber 35 will comprise that the glass substrate 10 of N-type microcrystal silicon layer 17 transfers in the unloading chamber 32 from microcrystal silicon process chamber 34;

In the 5th step, unloading chamber 32 will comprise that the glass substrate 10 of N-type microcrystal silicon layer 17 unloads out equipment shown in Figure 4, then form successively back electrode 18 and baffle 19 on N-type microcrystal silicon layer 17.

Because the successive sedimentation in same process chamber of P type amorphous silicon layer 12, intrinsic amorphous silicon layer 13 and N-type amorphous silicon layer 14 forms, the also successive sedimentation formation in same process chamber of P type microcrystal silicon layer 15, intrinsic microcrystalline silicon layer 16 and N-type microcrystal silicon layer 17, thereby, the reaction residues of described P type amorphous silicon layer 12 or P type microcrystal silicon layer 15 etc. can produce the deposition of follow-up intrinsic amorphous silicon layer 13 or intrinsic microcrystalline silicon layer 16 and pollute, thereby reduced the photoelectric conversion efficiency of hull cell, finally affected its power generation performance.

For fear of the pollution of 12 pairs of intrinsic amorphous silicon layer 13 of P type amorphous silicon layer or the pollution of 15 pairs of intrinsic microcrystalline silicon layer 16 of P type microcrystal silicon layer, prior art has proposed two kinds of different solutions:

The first, a kind of PECVD device is provided, it is deposition P type amorphous silicon layer 12, intrinsic amorphous silicon layer 13, P type microcrystal silicon layer 15 and intrinsic microcrystalline silicon layer 16 in different process chambers respectively.But this kind PECVD apparatus structure is complicated, expensive, has increased the production cost of thin-film solar cells.

Second, after formation P type amorphous silicon layer 12 and before forming intrinsic amorphous silicon layer 13 or after forming P type microcrystal silicon layer 15 and before forming intrinsic microcrystalline silicon layer 16, adopt the method for steam cleaning to form passivation layer at P type amorphous silicon layer 12 or P type microcrystal silicon layer 15.But the method can only avoid impurity gas residual on the P type amorphous silicon layer 12 or other residues to the pollution of intrinsic amorphous silicon layer 13, perhaps avoid impurity gas residual on the P type microcrystal silicon layer 15 or other residues to the pollution of intrinsic microcrystalline silicon layer 16, and can not avoid impurity gas or other residues on the process chamber wall to be recycled on intrinsic amorphous silicon layer 13 or the intrinsic microcrystalline silicon layer 15, thereby weaken the at the interface electric field strength in the intrinsic amorphous silicon layer 13 of P type amorphous silicon layer 12 and intrinsic amorphous silicon layer 13, perhaps weaken the at the interface electric field strength in the intrinsic microcrystalline silicon layer 16 of P type microcrystal silicon layer 15 and intrinsic microcrystalline silicon layer 16, the final collection efficiency that reduces solar cell, deterioration.

Therefore, in the manufacture process of thin-film solar cells, how low-cost and eliminate efficiently the residue that forms behind P type amorphous silicon layer 12 or the P type microcrystal silicon layer 15 pollution of intrinsic amorphous silicon layer 13 or intrinsic microcrystalline silicon layer 16 is just become those skilled in the art's problem demanding prompt solution.

Summary of the invention

The purpose of this invention is to provide a kind of silicon-based film solar cells manufacture method and manufacturing installation thereof, in order to solve the pollution problem in the thin-film solar cells manufacture process that exists in the prior art.

The invention provides a kind of silicon-based film solar cells manufacture method, comprising:

Substrate is provided, comprises transparent electrode layer on the described substrate;

One chemical vapor deposition unit is provided, and described chemical vapor deposition unit comprises the first process chamber;

In described board transport to the first process chamber, form p type semiconductor layer at described transparent electrode layer;

The substrate that will comprise p type semiconductor layer takes out from described the first process chamber, and described the first process chamber is cleaned;

To comprise in board transport to the first process chamber of p type semiconductor layer, form intrinsic semiconductor layer at described p type semiconductor layer;

Form n type semiconductor layer in described intrinsic semiconductor layer.

Preferably, described silicon-based film solar cells is amorphous silicon thin-film solar cell, and described the first process chamber is the amorphous silicon process chamber, and described p type semiconductor layer is P type amorphous silicon layer, described intrinsic semiconductor layer is intrinsic amorphous silicon layer, and described n type semiconductor layer is the N-type amorphous silicon layer.

The time of preferably, described the first process chamber being cleaned was more than or equal to 20 seconds and be less than or equal to 200 seconds.

Preferably, described silicon-based film solar cells is the microcrystalline silicon film solar cell, and described the first process chamber is the microcrystal silicon process chamber, and described p type semiconductor layer is P type microcrystal silicon layer, described intrinsic semiconductor layer is intrinsic microcrystalline silicon layer, and described n type semiconductor layer is the N-type microcrystal silicon layer.

The time of preferably, described the first process chamber being cleaned was more than or equal to 40 seconds and be less than or equal to 400 seconds.

Preferably, described silicon-based film solar cells is amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells, described the first process chamber is the amorphous silicon process chamber, described p type semiconductor layer is P type amorphous silicon layer, described intrinsic semiconductor layer is intrinsic amorphous silicon layer, and described n type semiconductor layer is the N-type amorphous silicon layer.

Preferably, described chemical vapor deposition unit also comprises: the second process chamber, described the second process chamber is the microcrystal silicon process chamber, and described method also comprises: will comprise in board transport to the second process chamber of N-type amorphous silicon layer, and form P type microcrystal silicon layer at described N-type amorphous silicon layer; The substrate that will comprise P type microcrystal silicon layer takes out from described the second process chamber, and described the second process chamber is cleaned; To comprise in board transport to the second process chamber of P type microcrystal silicon layer, form intrinsic microcrystalline silicon layer at described P type microcrystal silicon layer; Form the N-type microcrystal silicon layer in described intrinsic microcrystalline silicon layer.

Preferably, described cleaning is that in-situ plasma is cleaned or remote plasma cleans.

The time of preferably, described the first process chamber being cleaned was directly proportional with the time that forms described p type semiconductor layer.

Preferably, described silicon-based film solar cells manufacture method also comprises: when described the first process chamber is cleaned, the substrate that takes out from the first process chamber is carried out heat treated.

Preferably, described silicon-based film solar cells manufacture method also comprises: before the substrate that will comprise described p type semiconductor layer takes out from described the first process chamber, form passivation layer at described p type semiconductor layer.

Preferably, described silicon-based film solar cells manufacture method also comprises: n type semiconductor layer forms in the first process chamber, after forming described n type semiconductor layer, will comprise that the substrate of n type semiconductor layer takes out from described the first process chamber, described the first process chamber is cleaned.

Preferably; described silicon-based film solar cells manufacture method also comprises: after forming described n type semiconductor layer; the substrate that will comprise n type semiconductor layer takes out from described the first process chamber, forms successively back electrode and baffle on described n type semiconductor layer.

Preferably, described chemical vapor deposition unit also comprises: the vacuum transmission chamber, and described vacuum transmission chamber connects described the first process chamber, and described vacuum transmission chamber comprises conveying robot, when described the first process chamber was cleaned, described substrate was positioned at described handling machinery on hand.

Preferably, described chemical vapor deposition unit is plasma enhanced chemical vapor deposition unit.

Preferably, described chemical vapor deposition unit also comprises: the N-type process chamber, forming n type semiconductor layer in described intrinsic semiconductor layer comprises: the substrate that will comprise intrinsic semiconductor layer transfers to the N-type process chamber from described the first process chamber, forms n type semiconductor layer in described N-type process chamber.

Preferably, described silicon-based film solar cells is amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells, described the first process chamber is amorphous silicon process chamber and microcrystal silicon process chamber, described p type semiconductor layer is P type amorphous silicon layer, described intrinsic semiconductor layer is intrinsic amorphous silicon layer, described n type semiconductor layer is the N-type amorphous silicon layer, and after forming the N-type amorphous silicon layer, described method also comprises: clean described the first process chamber; Board transport to the first process chamber that will comprise the N-type amorphous silicon layer forms P type microcrystal silicon layer at described N-type amorphous silicon layer; The substrate that will comprise P type microcrystal silicon layer takes out from described the first process chamber, and described the first process chamber is cleaned; To comprise in board transport to the first process chamber of P type microcrystal silicon layer, form intrinsic microcrystalline silicon layer at described P type microcrystal silicon layer; Form the N-type microcrystal silicon layer in described intrinsic microcrystalline silicon layer.

In order to address the above problem, the present invention also provides a kind of silicon-based film solar cells manufacturing installation, comprising:

LOADED CAVITY is used for loading the substrate that comprises transparent electrode layer;

The first process chamber is used for forming successively p type semiconductor layer and intrinsic semiconductor layer on described transparent electrode layer;

The vacuum transmission chamber connects respectively described LOADED CAVITY and described the first process chamber, and described vacuum transmission chamber comprises conveying robot, and described conveying robot is used for comprising that the substrate of transparent electrode layer is from mutually carrying between each chamber;

Control module, after forming described p type semiconductor layer and before forming described intrinsic semiconductor layer, described control module is controlled the substrate that described conveying robot will comprise p type semiconductor layer and is taken out from described the first process chamber, controls the first process chamber and cleans; After described cleaning, described control module is controlled in board transport to the first process chamber that described conveying robot will comprise p type semiconductor layer, to form intrinsic semiconductor layer at described p type semiconductor layer.

Preferably, described control module is also controlled described the first process chamber and is formed n type semiconductor layer in described intrinsic semiconductor layer.

Preferably, described silicon-based film solar cells manufacturing installation also comprises: the N-type process chamber, connect described vacuum transmission chamber, after forming described intrinsic semiconductor layer, described control module is controlled the substrate that described conveying robot will comprise intrinsic semiconductor layer and is transferred in the N-type process chamber from the first process chamber, and controls described N-type process chamber and form n type semiconductor layer in described intrinsic semiconductor layer.

Preferably, described silicon-based film solar cells manufacturing installation also comprises: the second process chamber, be connected with described vacuum transmission chamber, described the second process chamber is the microcrystal silicon process chamber, is used for forming P type microcrystal silicon layer and intrinsic microcrystalline silicon layer at described N-type amorphous silicon layer; After forming described N-type amorphous silicon layer, described control module is controlled in board transport to the second process chamber that described conveying robot will comprise the N-type amorphous silicon layer, and controls described the second process chamber and form P type microcrystal silicon layer at described N-type amorphous silicon layer; After forming described P type microcrystal silicon layer and before the described intrinsic microcrystalline silicon layer of formation, described control module is controlled the substrate that described conveying robot will comprise P type microcrystal silicon layer and is taken out from described the second process chamber, controls the second process chamber and cleans; After described cleaning, described control module is controlled in board transport to the second process chamber that described conveying robot will comprise P type microcrystal silicon layer, and controls described the second process chamber and form intrinsic microcrystalline silicon layer at described P type microcrystal silicon layer.

Preferably, the number of described the second process chamber is the twice of the number of described the first process chamber.

Preferably, described silicon-based film solar cells is amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells, described the first process chamber is amorphous silicon process chamber and microcrystal silicon process chamber, described p type semiconductor layer is P type amorphous silicon layer, described intrinsic semiconductor layer is intrinsic amorphous silicon layer, and described n type semiconductor layer is the N-type amorphous silicon layer, after forming the N-type amorphous silicon layer, the substrate that will comprise the N-type amorphous silicon layer takes out from the first process chamber, and described the first process chamber is cleaned in described control module control; Described control module is controlled board transport to the first process chamber that described conveying robot will comprise the N-type amorphous silicon layer, to form P type microcrystal silicon layer at described N-type amorphous silicon layer; Described control module is controlled the substrate that described conveying robot will comprise P type microcrystal silicon layer and is taken out from described the first process chamber, so that described the first process chamber is cleaned; Described control module is controlled in board transport to the first process chamber that described conveying robot will comprise P type microcrystal silicon layer, forms intrinsic microcrystalline silicon layer at described P type microcrystal silicon layer.

Preferably, before the substrate that will comprise p type semiconductor layer took out from described the first process chamber, described control module was also controlled described the first process chamber and is formed passivation layer at described p type semiconductor layer.

Preferably, described vacuum transmission is provided with heater in the chamber, is used for the substrate that comprises described p type semiconductor layer is heated.

Preferably, described the first process chamber comprises two-layer at least the first process chamber, described conveying robot comprises two-layer at least load bearing arm, and described conveying robot is used for taking out at least two described substrates or inciting somebody to action simultaneously at least two described board carryings to described the first process chamber from described the first process chamber simultaneously.

Preferably, described silicon-based film solar cells manufacturing installation also comprises: gas extraction system is used for discharging intracavity gas; The cleaning source system is used for providing clean air; Each described first process chamber shares described gas extraction system or cleaning source system.

Preferably, described silicon-based film solar cells manufacturing installation also comprises: gas extraction system is used for discharging intracavity gas; The cleaning source system is used for providing clean air; Described the first process chamber and described the second process chamber share described gas extraction system or cleaning source system.

Compared with prior art, the present invention has the following advantages:

1) with described board transport to described the first process chamber, after transparent electrode layer forms p type semiconductor layer, the substrate that will comprise p type semiconductor layer takes out from the first process chamber, the first process chamber is cleaned, then will comprise in board transport to the first process chamber of p type semiconductor layer, to form intrinsic semiconductor layer at p type semiconductor layer, the present invention is by after forming p type semiconductor layer and before forming intrinsic semiconductor layer, substrate is temporarily shifted out the first process chamber, come the first process chamber is cleaned, the residue that forms in the time of can thoroughly removing the deposition p type semiconductor layer, avoid the pollution of p type semiconductor layer to intrinsic semiconductor layer, thereby prevented the reduction of thin-film solar cell photoelectric conversion efficiency; Simultaneously, the present invention need not to increase new process chamber or other equipment, has saved production cost.

2) described cleaning is that in-situ plasma is cleaned or remote plasma cleans, and can take etching method, finishes in the short period of time the cleaning to the first process chamber, has improved cleaning rate, and can effectively avoid the impact on battery performance; Simultaneously, when described the first process chamber is cleaned, substrate is arranged in the vacuum transmission chamber that is close to the first process chamber, and the time of its stop is shorter, therefore the temperature contrast of substrate when shifting out and again move into the first process chamber is less, minimum on successive process impact, finally saved the manufacturing time of silicon-based film solar cells.

The time of 3) described the first process chamber being cleaned was directly proportional with the time that forms described p type semiconductor layer, this be because, the time that forms p type semiconductor layer is longer, material residual in the first process chamber is more, correspondingly, time to the cleaning of the first process chamber should be longer, so not only avoided scavenging period too short and so that residue removal is not thorough, also avoided scavenging period oversize and lose time and clean air, guaranteed reasonably removing all residues in the first process chamber in the time.

4) when described the first process chamber is cleaned, the substrate that takes out from described the first process chamber is carried out heat treated, so that the temperature of substrate is kept, thereby avoided successive process is impacted.

5) before the substrate that will comprise described p type semiconductor layer takes out from described the first process chamber, form passivation layer at described p type semiconductor layer, thereby further reduced the pollution of the residue on the p type semiconductor layer to intrinsic semiconductor layer.

6) described the first process chamber is amorphous silicon process chamber and microcrystal silicon process chamber, after forming P type amorphous silicon layer and P type microcrystal silicon layer, respectively substrate is taken out from the first process chamber, so that the first process chamber is cleaned, thereby under deposition the prerequisite to the pollution of intrinsic microcrystalline silicon layer of the deposition of avoiding P type amorphous silicon layer to the pollution of intrinsic amorphous silicon layer and P type microcrystal silicon layer, by in same process chamber, finishing the manufacturing of amorphous microcrystalline silion cell, reduce the process chamber number, saved the production cost of thin-film solar cells.

7) described chemical vapor deposition unit also comprises the vacuum transmission chamber that connects the first process chamber, this vacuum transmission chamber comprises conveying robot, when described the first process chamber is cleaned, described substrate is positioned at described handling machinery on hand, thereby can after finishing cleaning, rapidly substrate be transmitted back the first process chamber again, optimize processing procedure with maximization, further, described vacuum transmission is provided with heater in the chamber, so that described handling machinery substrate temperature is on hand kept.

8) described the first process chamber is the amorphous silicon process chamber, described the second process chamber is the microcrystal silicon process chamber, the number of described the second process chamber is the twice of the number of described the first process chamber, because the manufacturing time of amorphous silicon battery approximately is the microcrystal silicon battery manufacture time half, therefore by the number ratio in different disposal chamber reasonably is set, can enhance productivity substantially, avoid the idle waste of part resource.

9) described the first process chamber comprises two-layer at least the first process chamber, described conveying robot comprises two-layer at least load bearing arm, described conveying robot is used for taking out at least two described substrates or inciting somebody to action simultaneously at least two described board carryings to described the first process chamber from described the first process chamber simultaneously, thereby increased the efficient of board transport and processing, finally improved the production efficiency of silicon-based film solar cells.

10) described silicon-based film solar cells manufacturing installation also comprises: gas extraction system and cleaning source system, described the first process chamber and described the second process chamber share described gas extraction system or cleaning source system, with further simplification device, save cost.

Description of drawings

Fig. 1 is the structural representation of amorphous silicon thin-film solar cell in the prior art;

Fig. 2 is the structural representation of microcrystalline silicon film solar cell in the prior art;

Fig. 3 is the structural representation of amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells in the prior art;

Fig. 4 is the plan structure schematic diagram of amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells production equipment in the prior art;

Fig. 5 is the cross-sectional view of PECVD device in the prior art;

Fig. 6 is the schematic flow sheet of the amorphous silicon thin-film solar cell manufacture method of the embodiment of the invention one;

Fig. 7 is the schematic flow sheet of the microcrystalline silicon film method for manufacturing solar battery of the embodiment of the invention two;

Fig. 8 is the amorphous silicon of the embodiment of the invention three and the schematic flow sheet of crystalline/micro-crystalline silicon laminated thin-film solar cells manufacture method;

Fig. 9 is the amorphous silicon of the embodiment of the invention four and the schematic flow sheet of crystalline/micro-crystalline silicon laminated thin-film solar cells manufacture method;

Figure 10 is the plan structure schematic diagram of the amorphous silicon thin-film solar cell manufacturing installation of the embodiment of the invention five;

Figure 11 is the schematic cross-section along A-B-C direction among Figure 10;

Figure 12 is the plan structure schematic diagram of the microcrystalline silicon film solar cell manufacturing installation of the embodiment of the invention six;

Figure 13 is the amorphous silicon of the embodiment of the invention seven and the plan structure schematic diagram of crystalline/micro-crystalline silicon laminated thin-film solar cells manufacturing installation;

Figure 14 is the amorphous silicon of the embodiment of the invention eight and the plan structure schematic diagram of crystalline/micro-crystalline silicon laminated thin-film solar cells manufacturing installation.

Embodiment

For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.

Set forth in the following description a lot of details so that fully understand the present invention, but the present invention can also adopt the alternate manner that is different from herein to implement, so the present invention is not subjected to the restriction of following public specific embodiment.

Just as described in the background section, in the prior art of making silicon-based film solar cells, impurity gas or other residues residual during the deposition p type semiconductor layer can produce pollution to the deposition of intrinsic semiconductor layer, thereby reduced the photoelectric conversion efficiency of thin-film solar cells, finally affected the power generation performance of thin-film solar cells.Although prior art has provided solution, there is the halfway problem of production cost height or residue removal.For defects, the invention provides a kind of silicon-based film solar cells manufacture method and manufacturing installation thereof, residue is to the pollution of intrinsic semiconductor layer in the time of can eliminating the formation p type semiconductor layer low-cost and efficiently.

Silicon-based film solar cells manufacture method provided by the invention comprises:

Form n type semiconductor layer in described intrinsic semiconductor layer.

Accordingly, silicon-based film solar cells manufacturing installation provided by the invention comprises:

The vacuum transmission chamber connects respectively described LOADED CAVITY and described the first process chamber, and described vacuum transmission chamber comprises conveying robot, and described conveying robot is used for comprising that the substrate of transparent electrode layer transfers to the first process chamber from LOADED CAVITY;

Control module, after forming described p type semiconductor layer and before forming described intrinsic semiconductor layer, described control module is controlled the substrate that described conveying robot will comprise p type semiconductor layer and is taken out from described the first process chamber, and described the first process chamber is cleaned; After described cleaning, described control module is controlled in board transport to the first process chamber that described conveying robot will comprise p type semiconductor layer, to form intrinsic semiconductor layer at described p type semiconductor layer.

The present invention is with in board transport to the first process chamber, after transparent electrode layer forms p type semiconductor layer, the substrate that will comprise p type semiconductor layer takes out from the first process chamber, the first process chamber is cleaned, then will comprise in board transport to the first process chamber of p type semiconductor layer, to form intrinsic semiconductor layer at p type semiconductor layer, the present invention is by after forming p type semiconductor layer and before forming intrinsic semiconductor layer, substrate is temporarily shifted out the first process chamber, so that the first process chamber is cleaned, thereby residual impurity gas or other residues in the first process chamber in the time of can thoroughly removing the formation p type semiconductor layer, avoid the pollution of p type semiconductor layer to intrinsic semiconductor layer, improved the photoelectric conversion efficiency of thin-film solar cells; Simultaneously, the present invention need not to increase new process chamber or other equipment, therefore can not improve the production cost of thin-film solar cells.

Be elaborated below in conjunction with accompanying drawing.

Embodiment one

Present embodiment provides a kind of silicon-based film solar cells manufacture method, be specially the amorphous silicon thin-film solar cell manufacture method, described amorphous silicon thin-film solar cell structure as shown in Figure 1, then described the first process chamber is the amorphous silicon process chamber in the present embodiment, described p type semiconductor layer is P type amorphous silicon layer in the present embodiment, described intrinsic semiconductor layer is intrinsic amorphous silicon layer in the present embodiment, described n type semiconductor layer is the N-type amorphous silicon layer in the present embodiment, referring to shown in Figure 6, described manufacture method comprises:

Step S11 provides substrate, comprises transparent electrode layer on the described substrate;

Step S12 provides a chemical vapor deposition unit, and described chemical vapor deposition unit comprises described amorphous silicon process chamber;

Step S13 to described amorphous silicon process chamber, forms P type amorphous silicon layer at described transparent electrode layer with described board transport;

Step S14 will comprise that the substrate of P type amorphous silicon layer takes out from described amorphous silicon process chamber, described amorphous silicon process chamber is cleaned;

Step S15 will comprise the board transport of P type amorphous silicon layer to the amorphous silicon process chamber, form intrinsic amorphous silicon layer at described P type amorphous silicon layer;

Step S16 forms the N-type amorphous silicon layer in described intrinsic amorphous silicon layer;

Step S17 forms back of the body electroplax and baffle successively on described N-type amorphous silicon layer.

Present embodiment with board transport to the described amorphous silicon process chamber, after described transparent electrode layer forms described P type amorphous silicon layer, the substrate that will include described P type amorphous silicon layer takes out from described amorphous silicon process chamber, described amorphous silicon process chamber is cleaned, the board transport that then will comprise described P type amorphous silicon layer is returned in the described amorphous silicon process chamber, to form intrinsic amorphous silicon layer at described P type amorphous silicon layer.The present invention is by after forming P type amorphous silicon layer and before the formation intrinsic amorphous silicon layer, substrate is temporarily shifted out the amorphous silicon process chamber, so that the amorphous silicon process chamber is cleaned, thereby residual impurity gas or other residues in the amorphous silicon process chamber in the time of can thoroughly removing formation P type amorphous silicon layer, avoid the pollution of P type amorphous silicon layer to intrinsic amorphous silicon layer, improved the photoelectric conversion efficiency of thin-film solar cells; Simultaneously, need not to increase new process chamber or other equipment, therefore can not improve the production cost of thin-film solar cells.

Described step S11 specifically comprises: provide large-area glass substrate, at the described transparent electrode layer of described glass substrate deposition, described glass substrate insulation and printing opacity.Described substrate can also be metal substrate or plastic base, and it does not limit protection scope of the present invention at this.Need to prove, before substrate forms transparent electrode layer, can also clean glass substrate, to avoid the impurity on the glass substrate transparent electrode layer is exerted an influence.Preferably, the material of described transparent electrode layer is zinc oxide, and adopts low-pressure chemical vapor deposition method to be formed on the glass substrate, and it is known for those skilled in the art, so do not repeat them here.Particularly, the thickness of described transparent electrode layer can be about 1.5 microns.

Described step S12 specifically comprises: a chemical vapor deposition unit is provided, described chemical vapor deposition unit comprises LOADED CAVITY, amorphous silicon process chamber and vacuum transmission chamber, described vacuum transmission chamber connects respectively described amorphous silicon process chamber and LOADED CAVITY, and described vacuum transmission chamber comprises conveying robot.Particularly, described chemical vapor deposition unit can be plasma enhanced chemical vapor deposition (PECVD) device.

Described step S13 specifically comprises: the substrate that will comprise described transparent electrode layer is loaded in the described LOADED CAVITY, and adopt the conveying robot in the described vacuum transmission chamber that described substrate is transferred to the described amorphous silicon process chamber from LOADED CAVITY, to form P type amorphous silicon layer at described transparent electrode layer.Preferably, adopt PECVD device deposition to form P type amorphous silicon layer, sedimentation time is usually more than or equal to 50 seconds and be less than or equal to 100 seconds, and concrete deposition process is known for those skilled in the art, so do not repeat them here.More excellent, after forming P type amorphous silicon layer and the substrate that will comprise P type amorphous silicon layer before the taking-up of amorphous silicon process chamber, can also form passivation layer at described P type amorphous silicon layer.The concrete grammar that forms described passivation layer is: pass into steam in described amorphous silicon process chamber, so that steam at high temperature reacts with the surface of P type amorphous silicon layer, finally form passivation layer at described P type amorphous silicon layer.The residue that this passivation layer has been got rid of on the P type amorphous silicon layer produces the possibility of pollution to the intrinsic amorphous silicon layer of follow-up formation, has improved the photoelectric conversion efficiency of thin-film solar cells.

Described step S14 specifically comprises: after adopting conveying robot in the described vacuum transmission chamber will comprise that the substrate of described P type amorphous silicon layer takes out from described amorphous silicon process chamber, described amorphous silicon process chamber is cleaned.Preferably, described cleaning is that in-situ plasma is cleaned or remote plasma cleans, and to finish in the short period of time the cleaning to described amorphous silicon process chamber, improves cleaning rate, and effectively avoids the impact on battery performance; Simultaneously, because the time that described substrate stops outside described amorphous silicon process chamber is shorter, when thereby substrate shifts out the amorphous silicon process chamber and follow-up when again transferring to the amorphous silicon process chamber between the two temperature contrast less, minimum on successive process impact, finally saved the manufacturing time of amorphous silicon thin-film solar cell.

Described in-situ plasma cleaning method specifically comprises: be filled with clean air in described amorphous silicon process chamber, described clean air comprises NF ₃, be provided with plasma generator (Plasma System, PS) and gas extraction system in the described amorphous silicon process chamber; Described plasma generator makes NF ₃Decomposite fluorine ion, then fluorine ion when forming described P type amorphous silicon layer in the amorphous silicon process chamber residual impurity gas or other residue react, generate gaseous compound; By described gas extraction system described gaseous compound or the described residual doping gaseous state that do not reacted are discharged the amorphous silicon process chamber, thereby removed when forming described P type amorphous silicon layer impurity gas or other residues residual in described amorphous silicon process chamber.Described remote plasma cleaning method comprises: a remote plasma generator (Remote Plasma System, RPS) is provided outside described amorphous silicon process chamber, and described amorphous silicon process chamber comprises gas extraction system; Described remote plasma generator directly is filled with the cleaning ion in the amorphous silicon process chamber, such as fluorine ion, this fluorine ion directly when forming described P type amorphous silicon layer in the amorphous silicon process chamber residual impurity gas or other residues react, generate gaseous compound; By described gas extraction system described gaseous compound or the described residual doping gaseous state that do not reacted are discharged described amorphous silicon process chamber, thereby removed when forming described P type amorphous silicon layer impurity gas or other residues residual in the amorphous silicon process chamber.This remote plasma cleaning method is different from described in-situ plasma cleaning method part and is, directly do not ionize in the described amorphous silicon process chamber, thereby can reduce infringement to described substrate, and it is shorter to clean the used time, and cleaning rate is higher.

In some more excellent embodiment of the present invention, the time that described amorphous silicon process chamber is cleaned was directly proportional with the time that forms described P type amorphous silicon layer, the time that forms described P type amorphous silicon layer is longer, material residual in the described amorphous silicon process chamber is more, correspondingly, time to described amorphous silicon process chamber cleaning should be longer, so not only avoided scavenging period too short and so that residue removal is not thorough, also avoid scavenging period oversize and lose time and clean air, guaranteed within the shortest time, to remove all residues in the amorphous silicon process chamber.The time of more preferably, described amorphous silicon process chamber being cleaned is 0.4～2 times of time of forming described P type amorphous silicon layer.Because the time that forms P type amorphous silicon layer in the present embodiment is usually more than or equal to 50 seconds and be less than or equal to 100 seconds, the time of therefore described amorphous silicon process chamber being cleaned can and be less than or equal to 200 seconds more than or equal to 20 seconds, as: 20 seconds, 50 seconds, 100 seconds or 200 seconds etc.When described amorphous silicon process chamber is cleaned, described substrate can be positioned at described handling machinery on hand, be positioned at described vacuum transmission chamber owing to carry the described conveying robot of described substrate, thereby after the cleaning of finishing the amorphous silicon process chamber, can rapidly described substrate be transferred to again described amorphous silicon process chamber, further shorten cleaning step to the impact of whole manufacturing time.

In some more excellent embodiment of the present invention, described vacuum transmission chamber has heater, when described amorphous silicon process chamber is cleaned, described heater carries out heat treated to the substrate that takes out from described amorphous silicon process chamber, so that the temperature of substrate is kept, thereby avoid successive process is impacted.More preferably, described heater is heat lamp.

Described step S15 specifically comprises: the substrate that will comprise described P type amorphous silicon layer is directly transferred in the described amorphous silicon process chamber by conveying robot, forms intrinsic amorphous silicon layer at described P type amorphous silicon layer.Wherein, adopt time that described PECVD device deposits described intrinsic amorphous silicon layer usually more than or equal to 400 seconds and be less than or equal to 800 seconds, concrete deposition process is known for those skilled in the art, so do not repeat them here.

Described step S16 specifically comprises: at the described N-type amorphous silicon layer of described intrinsic amorphous silicon layer deposition, this step can be carried out in the amorphous silicon process chamber, also can not carry out in the amorphous silicon process chamber.When in described amorphous silicon process chamber, forming described N-type amorphous silicon layer, adopt time that the PECVD device deposits described N-type amorphous silicon layer usually more than or equal to 200 seconds and be less than or equal to 400 seconds, concrete deposition process is known for those skilled in the art, so do not repeat them here.Need to prove, after in described amorphous silicon process chamber, forming described N-type amorphous silicon layer, comprise that also the conveying robot that adopts in the described vacuum transmission chamber will comprise the step that the substrate of described N-type amorphous silicon layer takes out from described amorphous silicon process chamber, so that described amorphous silicon process chamber is cleaned, successive process is impacted avoiding.Although also can be after the substrate that will comprise the N-type amorphous silicon layer takes out from the amorphous silicon process chamber in the prior art, the amorphous silicon process chamber is cleaned, but owing to be residue total when forming P type amorphous silicon layer and N-type amorphous silicon layer by cleaning what will remove in the prior art, and the cleaning of this moment only is the residue of removing when forming described N-type amorphous silicon layer in the present embodiment, therefore present embodiment cleans at this moment the required time and significantly reduces than prior art, has remedied the scavenging period among the step S14.When in described amorphous silicon process chamber, not forming described N-type amorphous silicon layer, this moment, described chemical vapor deposition unit also needed to comprise: the N-type process chamber, the process chamber of N-type described in the present embodiment is specially N-type amorphous silicon process chamber, forming n type semiconductor layer in described intrinsic semiconductor layer specifically comprises: adopt the conveying robot in the vacuum transmission chamber will comprise that the substrate of intrinsic amorphous silicon layer transfers to N-type amorphous silicon process chamber from described amorphous silicon process chamber, in described N-type amorphous silicon process chamber, form the N-type amorphous silicon layer, remain this moment and adopt PECVD device deposition to form the N-type amorphous silicon layer, the time that therefore forms described N-type amorphous silicon layer remains more than or equal to 200 seconds and is less than or equal to 400 seconds.

Described step S17 specifically comprises: after forming described N-type amorphous silicon layer; after the substrate that will comprise the N-type amorphous silicon layer takes out, on described N-type amorphous silicon layer, form successively back electrode and baffle from described amorphous silicon process chamber or described N-type amorphous silicon process chamber.The method that forms back electrode and baffle is known for those skilled in the art, so do not repeat them here.

Embodiment two

Present embodiment provides a kind of silicon-based film solar cells manufacture method, is specially the microcrystalline silicon film method for manufacturing solar battery, the structure of described microcrystalline silicon film solar cell, as shown in Figure 2.Then described the first process chamber is the microcrystal silicon process chamber, p type semiconductor layer is P type microcrystal silicon layer in the present embodiment, described intrinsic semiconductor layer is intrinsic microcrystalline silicon layer in the present embodiment, described n type semiconductor layer is the N-type microcrystal silicon layer in the present embodiment, referring to shown in Figure 7, described manufacture method comprises:

Step S21 provides substrate, comprises transparent electrode layer on the described substrate;

Step S22 provides a chemical vapor deposition unit, and described chemical vapor deposition unit comprises described microcrystal silicon process chamber;

Step S23 to described microcrystal silicon process chamber, forms described P type microcrystal silicon layer at described transparent electrode layer with described board transport;

Step S24 will comprise that the substrate of P type microcrystal silicon layer takes out from described microcrystal silicon process chamber, described microcrystal silicon process chamber is cleaned;

Step S25 will comprise the board transport of P type microcrystal silicon layer to the microcrystal silicon process chamber, form intrinsic microcrystalline silicon layer at described P type microcrystal silicon layer;

Step S26 forms the N-type microcrystal silicon layer in described intrinsic microcrystalline silicon layer;

Step S27 forms back of the body electroplax and baffle successively on described N-type microcrystal silicon layer.

Present embodiment is compared with embodiment one, difference is: the design parameters such as the flow rate of needed air pressure, reacting gas, temperature and time are different when depositing described P type amorphous silicon layer, described intrinsic amorphous silicon layer and described N-type amorphous silicon layer among the design parameters such as the flow rate of needed air pressure, reacting gas, temperature and time and the embodiment one when deposition described P type microcrystal silicon layer, described intrinsic microcrystalline silicon layer is with described N-type microcrystal silicon layer in the present embodiment, other something in common do not repeat them here.Need to prove that the described N-type microcrystal silicon layer that forms among the step S26 both can be finished in described microcrystal silicon process chamber, also can in described N-type microcrystal silicon process chamber, finish.

In some more excellent embodiment of the present invention, adopt time that the PECVD device deposits described P type microcrystal silicon layer usually more than or equal to 100 seconds and be less than or equal to 200 seconds, based on the proportional relation between sedimentation time and the scavenging period, therefore, after forming described P type microcrystal silicon layer, can and be less than or equal to 400 seconds more than or equal to 40 seconds to the scavenging period of described microcrystal silicon process chamber in the present embodiment.After finishing the described P type microcrystal silicon layer of deposition, the time that deposits described intrinsic microcrystalline silicon layer is usually more than or equal to 1500 seconds and be less than or equal to 2000 seconds.

Embodiment three

Present embodiment provides a kind of silicon-based film solar cells manufacture method, is specially amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells manufacture method, and the structure of described amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells as shown in Figure 3.Wherein said the first process chamber is the amorphous silicon process chamber, and p type semiconductor layer, intrinsic semiconductor layer, the n type semiconductor layer that deposits in described amorphous silicon process chamber is followed successively by P type amorphous silicon layer, intrinsic amorphous silicon layer, N-type amorphous silicon layer; In like manner, the second process chamber is the microcrystal silicon process chamber, and p type semiconductor layer, intrinsic semiconductor layer, the n type semiconductor layer that deposits in described microcrystal silicon process chamber is followed successively by P type microcrystal silicon layer, intrinsic microcrystalline silicon layer, N-type microcrystal silicon layer.Referring to shown in Figure 8, described manufacture method comprises:

Step S31 provides substrate, comprises transparent electrode layer on the described substrate;

Step S32 provides a chemical vapor deposition unit, and described chemical vapor deposition unit comprises described amorphous silicon process chamber and described microcrystal silicon process chamber;

Step S33 to described amorphous silicon process chamber, forms described P type amorphous silicon layer at described transparent electrode layer with described board transport;

Step S34 will comprise that the substrate of described P type amorphous silicon layer takes out from described amorphous silicon process chamber, described amorphous silicon process chamber is cleaned;

Step S35 will comprise that the board transport of described P type amorphous silicon layer to described amorphous silicon process chamber, forms described intrinsic amorphous silicon layer at described P type amorphous silicon layer;

Step S36 forms described N-type amorphous silicon layer in described intrinsic amorphous silicon layer;

Step S37 will comprise that the board transport of N-type amorphous silicon layer to described microcrystal silicon process chamber, forms described P type microcrystal silicon layer at described N-type amorphous silicon layer;

Step S38 will comprise that the substrate of described P type microcrystal silicon layer takes out from described microcrystal silicon process chamber, described microcrystal silicon process chamber is cleaned;

Step S39 will comprise that the board transport of described P type microcrystal silicon layer to described microcrystal silicon process chamber, forms described intrinsic microcrystalline silicon layer at described P type microcrystal silicon layer;

Step S40 forms described N-type microcrystal silicon layer in described intrinsic microcrystalline silicon layer;

Step S41 forms back of the body electroplax and baffle successively on described N-type microcrystal silicon layer.

Step S31～S36 is identical with step S11～S16 among the embodiment one in the present embodiment, and step S38～S41 is identical with step S24～S27 among the embodiment two in the present embodiment, does not repeat them here.And in the present embodiment among step S37 and the embodiment two difference of step S23 be: the substrate that will comprise transparent electrode layer among the step S23 of embodiment two transfers to the described microcrystal silicon process chamber from described LOADED CAVITY, and be that the substrate that will comprise described N-type amorphous silicon layer transfers to the microcrystal silicon process chamber from described amorphous silicon process chamber or N-type amorphous silicon process chamber among the present embodiment step S37, all the other are all identical.

Present embodiment is by adopting after the described P type amorphous silicon layer of deposition and described P type microcrystal silicon layer, the method of respectively substrate being taken out from described amorphous silicon process chamber or described microcrystal silicon process chamber, described amorphous silicon process chamber or described microcrystal silicon process chamber are cleaned, the method can thoroughly be removed when forming described P type amorphous silicon layer and P type microcrystal silicon layer impurity gas or other residues residual in described amorphous silicon process chamber and described microcrystal silicon process chamber, avoid the pollution to described intrinsic amorphous silicon layer and described intrinsic microcrystalline silicon layer, improved the photoelectric conversion efficiency of thin-film solar cells; Simultaneously, owing to need not to increase new process chamber or other equipment, can not increase cost yet.Because the parameters such as the flow rate of amorphous silicon battery and microcrystal silicon battery required temperature, air pressure, reacting gas in manufacture process and time are not identical, so adopted deposition of amorphous silicon films and microcrystalline silicon film in the different disposal chamber in the present embodiment, so that less to each parameter adjustment amount of each process chamber, save time, improve reaction rate.More preferably, the quantity of described microcrystal silicon process chamber is 2 times of quantity of described amorphous silicon process chamber.

Embodiment four

Present embodiment provides a kind of silicon-based film solar cells manufacture method, is specially amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells manufacture method, and the structure of described amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells as shown in Figure 3.Wherein said the first process chamber is amorphous silicon process chamber and microcrystal silicon process chamber, the p type semiconductor layer that deposits in described the first process chamber in the present embodiment is P type amorphous silicon layer or P type microcrystal silicon layer, the intrinsic semiconductor layer that deposits in described the first process chamber in the present embodiment is intrinsic amorphous silicon layer or Intrinsical microcrystal silicon layer, the n type semiconductor layer that deposits in described the first process chamber in the present embodiment is N-type amorphous silicon layer or N-type microcrystal silicon layer, referring to shown in Figure 9, described manufacture method comprises:

Step S51 provides substrate, comprises transparent electrode layer on the described substrate;

Step S52 provides a chemical vapor deposition unit, and described chemical vapor deposition unit comprises described the first process chamber;

Step S53 in described board transport to the first process chamber, forms described P type amorphous silicon layer at described transparent electrode layer;

Step S54 will comprise that the substrate of described P type amorphous silicon layer takes out from described the first process chamber, described the first process chamber is cleaned;

Step S55 will comprise the board transport of described P type amorphous silicon layer to described the first process chamber, in the described intrinsic amorphous silicon layer of described P type amorphous silicon layer deposition;

Step S56 forms the N-type amorphous silicon layer in described intrinsic amorphous silicon layer;

Step S57 will comprise that the substrate of described N-type amorphous silicon layer takes out from described the first process chamber, described the first process chamber is cleaned;

Step S58 will comprise board transport to the first process chamber of N-type amorphous silicon layer, form described P type microcrystal silicon layer at described N-type amorphous silicon layer;

Step S59 will comprise that the substrate of described P type microcrystal silicon layer takes out from described the first process chamber, described the first process chamber is cleaned;

Step S60 will comprise in board transport to the first process chamber of described P type microcrystal silicon layer, form described intrinsic microcrystalline silicon layer at described P type microcrystal silicon layer;

Step S61 forms described N-type microcrystal silicon layer in described intrinsic microcrystalline silicon layer;

Step S62 forms back of the body electroplax and baffle successively on described N-type microcrystal silicon layer.

Step S51～S56 is identical with step S31～S36 among the embodiment three in the present embodiment, and step S58～S62 is identical with step S37～S41 among the embodiment three, does not repeat them here.Compare with embodiment three, amorphous silicon photovoltaic element and microcrystal silicon photovoltaic element are finished in same process chamber in the present embodiment, have reduced process chamber quantity, have saved production cost.For fear of pollution, increased step S57 in the present embodiment, namely after forming described N-type amorphous silicon layer, clean described the first process chamber.Wherein, the detailed process of cleaning described the first process chamber is identical with preceding step S54, does not repeat them here.

Embodiment five

Present embodiment provides a kind of silicon-based film solar cells manufacturing installation, is specially the amorphous silicon thin-film solar cell manufacturing installation, and the structure of described amorphous silicon thin-film solar cell as shown in Figure 1.Wherein said the first process chamber is the amorphous silicon process chamber, p type semiconductor layer is P type amorphous silicon layer in the present embodiment, and intrinsic semiconductor layer is intrinsic amorphous silicon layer in the present embodiment, and n type semiconductor layer is the N-type amorphous silicon layer in the present embodiment, referring to shown in Figure 10, described manufacturing installation comprises:

LOADED CAVITY 31 is used for loading the substrate that comprises transparent electrode layer, and its two ends are respectively arranged with valve 30;

Unloading chamber 32 is used for the substrate that unloading comprises described N-type amorphous silicon layer, and its two ends arrange respectively valve 30;

One or more described amorphous silicon process chambers 33, be used for forming successively on described transparent electrode layer described P type amorphous silicon layer, described intrinsic amorphous silicon layer and described N-type amorphous silicon layer, the end that described amorphous silicon process chamber 33 connects vacuum transmission chamber 35 is provided with valve 30;

Vacuum transmission chamber 35, connect respectively described LOADED CAVITY 31, described unloading chamber 32 and described amorphous silicon process chamber 33, described vacuum transmission chamber 35 comprises conveying robot 36, described conveying robot 36 is used for comprising that the substrate of described transparent electrode layer transfers to described amorphous silicon process chamber 33 from described LOADED CAVITY 31, and the board transport that will comprise described N-type amorphous silicon layer is to described unloading chamber 32;

The control module (not shown), after forming described P type amorphous silicon layer and before forming described intrinsic amorphous silicon layer, described control module is controlled the substrate that described conveying robot 36 will comprise described P type amorphous silicon layer and is taken out from described amorphous silicon process chamber 33, and described amorphous silicon process chamber 33 is cleaned; After finishing cleaning, described control module is controlled board transport that described conveying robot 36 will comprise P type amorphous silicon layer to amorphous silicon process chamber 33, to form successively described intrinsic amorphous silicon layer and described N-type amorphous silicon layer on described P type amorphous silicon layer;

One or more gas extraction system (not shown)s are used for discharging described amorphous silicon process chamber 33 interior gases;

One or more cleaning source system (not shown)s are used to described amorphous silicon process chamber 33 that clean air is provided.

The described amorphous silicon process chamber 33 of present embodiment is the PECVD device, described control module is controlled described board transport to amorphous silicon process chamber 33, after transparent electrode layer forms P type amorphous silicon layer, the substrate that described control module will be controlled the described P of comprising type amorphous silicon layer takes out from amorphous silicon process chamber 33, and amorphous silicon process chamber 33 cleaned, then the described control module substrate that will control the described P of comprising type amorphous silicon layer transfers in the amorphous silicon process chamber 33 it, to form intrinsic amorphous silicon layer at P type amorphous silicon layer, the present invention is by after forming described P type amorphous silicon layer and before forming described intrinsic amorphous silicon layer, with described control module control substrate is temporarily shifted out described amorphous silicon process chamber 33, described amorphous silicon process chamber 33 is cleaned, residual impurity gas or other residues in the described amorphous silicon process chamber 33 in the time of can thoroughly removing the described P type amorphous silicon layer of formation, avoid described P type amorphous silicon layer to the pollution of described intrinsic amorphous silicon layer, improved the photoelectric conversion efficiency of thin-film solar cells; Simultaneously, need not to increase new process chamber or other equipment, can not improve the production cost of thin-film solar cells.

Cleaning described in the present embodiment is that in-situ plasma is cleaned or remote plasma cleans, thereby can finish in the short period of time the cleaning to amorphous silicon process chamber 33, has improved cleaning rate, and can effectively avoid the impact on battery performance; Simultaneously, substrate is shorter in the time of amorphous silicon process chamber 33 outer stops, when thereby substrate shifts out amorphous silicon process chamber 33 and follow-up when again transferring to amorphous silicon process chamber 33 between the two temperature contrast less, minimum on successive process impact, finally saved the manufacturing time of amorphous silicon thin-film solar cell.

When described cleaning was the in-situ plasma cleaning, then described amorphous silicon process chamber 33 comprised plasma generator, and the cleaning source system is filled with clean air in the PECVD device, such as NF ₃, plasma generator makes NF ₃Decomposite fluorine ion, then fluorine ion when forming P type amorphous silicon layer in the amorphous silicon process chamber 33 residual impurity gas or other residues react, generate gaseous compound, finally by gas extraction system gaseous compound or residual doping gaseous state are discharged amorphous silicon process chamber 33, thereby removed when forming P type amorphous silicon layer residual impurity gas or other residues in the amorphous silicon process chamber 33.

When described cleaning was the remote plasma cleaning, then described amorphous silicon process chamber 33 was outside equipped with the remote plasma generator, and the cleaning source system is filled with clean air in the remote plasma generator, such as NF ₃, the remote plasma generator makes NF ₃Decomposite fluorine ion, and fluorine ion directly is filled with in the amorphous silicon process chamber 33, this fluorine ion when forming P type amorphous silicon layer in the amorphous silicon process chamber 33 residual impurity gas or other residues react, generate gaseous compound, finally by gas extraction system gaseous compound or residual doping gaseous state are discharged amorphous silicon process chamber 33, thereby removed when forming P type amorphous silicon layer residual impurity gas or other residues in the amorphous silicon process chamber 33.The method and in-situ plasma are cleaned and are compared, and can not ionize in amorphous silicon process chamber 33, thereby can reduce infringement to substrate, and it is shorter to clean the used time, thereby cleaning rate is higher.

In some more excellent embodiment of the present invention, the time that described control module is controlled described amorphous silicon process chamber 33 cleanings was directly proportional with the time of the described P type amorphous silicon layer of deposition, because it is longer to deposit the time of described P type amorphous silicon layer, residuals in the described amorphous silicon process chamber 33 is more, to the time that described amorphous silicon process chamber 33 cleans also should be longer.So not only avoid scavenging period too short and so that removing residues is not thorough, also avoided scavenging period oversize and lose time and clean air, guaranteed within the shortest time, to remove the residue in the described amorphous silicon process chamber 33.

In some more excellent embodiment of the present invention, the time that described amorphous silicon process chamber 33 is cleaned can be to form 0.4～2 times of described P type amorphous silicon layer time.Because the time that forms described P type amorphous silicon layer in the present embodiment is usually more than or equal to 50 seconds and be less than or equal to 100 seconds, the time that described amorphous silicon process chamber is cleaned can and be less than or equal to 200 seconds more than or equal to 20 seconds, as: 20 seconds, 50 seconds, 100 seconds or 200 seconds etc.

In some more excellent embodiment of the present invention, when described amorphous silicon process chamber 33 is cleaned, described substrate can be positioned on the described conveying robot 36 in described vacuum transmission chamber 35, because described vacuum transmission chamber 35 is connected on the described amorphous silicon process chamber 33, so after the cleaning of finishing described amorphous silicon process chamber 33, can rapidly described substrate be transferred in the described amorphous silicon process chamber 33 again, shorten the impact of cleaning step on whole manufacturing time.

In some more excellent embodiment of the present invention, described vacuum transmission chamber 35 can comprise heater, as: heat lamp etc., described heater is used for the substrate on the described conveying robot 36 is heated, so that the temperature of substrate kept, thereby avoid successive process is impacted.

In some more excellent embodiment of the present invention, described amorphous silicon process chamber 33 comprises two-layer at least the first process chamber, as shown in figure 11, described the first process chamber is specially the amorphous silicon process chamber, described LOADED CAVITY 31 comprises two-layer at least loading chamber, described conveying robot 36 comprises two-layer at least load bearing arm, described conveying robot 36 is used for simultaneously taking out at least two plate bases or simultaneously at least two plate bases being carried to the described amorphous silicon process chamber 33 from described amorphous silicon process chamber 33 or described LOADED CAVITY 31, thereby increased the efficient of board transport and processing, improved the production efficiency of amorphous silicon thin-film solar cell.Correspondingly, described unloading chamber 32 also comprises two-layer at least relief chamber.

In some more excellent embodiment of the present invention, a plurality of the first process chambers in the described amorphous silicon process chamber 33 share same gas extraction system or cleaning source system, further, three amorphous silicon process chambers 33 share same gas extraction system or cleaning source system in the present embodiment, like this can simplification device, save cost.

In some more excellent embodiment of the present invention, comprise heating module in the described LOADED CAVITY 31, after described LOADED CAVITY 31 adds carried base board, the described substrate of described heating module preheating, make that substrate temperature is approximate to be reached or a little more than the temperature of described amorphous silicon process chamber 33 when the described P type amorphous silicon layer of deposition, thereby so that substrate need not long-time heating after described LOADED CAVITY 31 enters described amorphous silicon process chamber 33, just can just deposit described P type amorphous silicon layer in the short time.

In some more excellent embodiment of the present invention, described unloading chamber 32 comprises refrigerating module, to the described unloading chamber 32, described refrigerating module cools off described substrate in the board transport that will comprise described N-type amorphous silicon layer, so that substrate 32 reaches room temperature when taking out easily from described unloading chamber.

In some more excellent embodiment of the present invention, described amorphous silicon thin-film solar cell manufacturing installation can also comprise described N-type process chamber, and then described N-type process chamber is N-type amorphous silicon process chamber, connects described vacuum transmission chamber 35.When described substrate after described amorphous silicon process chamber deposits described intrinsic amorphous silicon layer, described control module is controlled the substrate that described conveying robot 36 will comprise intrinsic amorphous silicon layer and is transferred to from amorphous silicon process chamber 33 in the described N-type amorphous silicon process chamber, and controls described N-type amorphous silicon process chamber at described intrinsic amorphous silicon layer deposition N-type amorphous silicon layer; Then control module is controlled board transport that described conveying robot 36 will comprise described N-type amorphous silicon layer to described unloading chamber 32, and this moment, described amorphous silicon process chamber 33 only was used for depositing described P type amorphous silicon layer and described intrinsic amorphous silicon layer.

Embodiment six

Present embodiment provides a kind of silicon-based film solar cells manufacturing installation, is specially microcrystalline silicon film solar cell manufacturing installation, and described microcrystalline silicon film solar battery structure as shown in Figure 2.Wherein said the first process chamber is the microcrystal silicon process chamber, and p type semiconductor layer is P type microcrystal silicon layer, and intrinsic semiconductor layer is intrinsic microcrystalline silicon layer, and n type semiconductor layer is the N-type microcrystal silicon layer, and referring to shown in Figure 12, described manufacturing installation comprises:

Unloading chamber 32 is used for the substrate that unloading comprises described N-type microcrystal silicon layer, and its two ends are respectively arranged with valve 30;

One or more described microcrystal silicon process chambers 34, be used for forming successively on described transparent electrode layer described P type microcrystal silicon layer, described intrinsic microcrystalline silicon layer and described N-type microcrystal silicon layer, the end that described microcrystal silicon process chamber 34 connects vacuum transmission chamber 35 is provided with valve 30;

Vacuum transmission chamber 35, connect respectively described LOADED CAVITY 31, described unloading chamber 32 and described microcrystal silicon process chamber 34, described vacuum transmission chamber 35 comprises conveying robot 36, described conveying robot 36 is used for comprising that the substrate of transparent electrode layer transfers to described microcrystal silicon process chamber 34 from described LOADED CAVITY 31, and the board transport that will comprise described N-type microcrystal silicon layer is to described unloading chamber 32;

The control module (not shown), after forming described P type microcrystal silicon layer and before forming described intrinsic microcrystalline silicon layer, described control module is controlled the substrate that described conveying robot 36 will comprise P type microcrystal silicon layer and is taken out from described microcrystal silicon process chamber 34, and described microcrystal silicon process chamber 34 is cleaned; After described cleaning, described control module is controlled described conveying robot 36 will comprise that the board transport of described P type microcrystal silicon layer is to described microcrystal silicon process chamber 34, to form successively described intrinsic microcrystalline silicon layer and described N-type microcrystal silicon layer on described P type microcrystal silicon layer;

One or more gas extraction system (not shown)s are used for discharging described microcrystal silicon process chamber 34 interior gases;

One or more cleaning source system (not shown)s are used to described microcrystal silicon process chamber 34 that clean air is provided.

The present invention is by after forming described P type microcrystal silicon layer and before forming described intrinsic microcrystalline silicon layer, substrate is temporarily shifted out described microcrystal silicon process chamber 34, described microcrystal silicon process chamber 34 is cleaned, residual impurity gas or other residues in the described microcrystal silicon process chamber in the time of can thoroughly removing the described P type microcrystal silicon layer of formation, avoid described P type microcrystal silicon layer to the pollution of described intrinsic microcrystalline silicon layer, improved the photoelectric conversion efficiency of thin-film solar cells; Simultaneously, need not to increase new process chamber or other equipment, therefore can not improve the production cost of thin-film solar cells.

Compare with the described amorphous silicon thin-film solar cell of manufacturing in the enforcement five, present embodiment is when making described microcrystalline silicon film solar cell, it is different from parameter in the embodiment five amorphous silicon process chambers 33 that described control module is controlled the design parameters such as the flow rate, temperature and time of air pressure, the reacting gas of described microcrystal silicon process chamber 34, but the specific works process of each device of present embodiment is still identical with embodiment five, does not repeat them here.

In some more excellent embodiment of the present invention, the time that described control module control deposition forms described P type microcrystal silicon layer is usually more than or equal to 100 seconds and be less than or equal to 200 seconds, based on the proportional relation between sedimentation time and the scavenging period, and be generally 0.4～2 times of time of forming described P type microcrystal silicon layer the time that described microcrystal silicon process chamber cleans, therefore, after forming described P type microcrystal silicon layer, described control module can and be less than or equal to 400 seconds more than or equal to 40 seconds to the scavenging period of described microcrystal silicon process chamber 34 in the present embodiment.The time that forms described intrinsic microcrystalline silicon layer is usually more than or equal to 1500 seconds and be less than or equal to 2000 seconds, and the time that forms described N-type microcrystal silicon layer is usually more than or equal to 100 seconds and be less than or equal to 400 seconds.

In some more excellent embodiment of the present invention, described N-type microcrystal silicon layer can not form in described microcrystal silicon process chamber 34, and described manufacturing installation can also comprise: the N-type process chamber.Described N-type process chamber is N-type microcrystal silicon process chamber, is used for forming described N-type microcrystal silicon layer in described intrinsic microcrystalline silicon layer.At this moment, described microcrystal silicon process chamber 34 only is used to form described P type microcrystal silicon layer and described intrinsic microcrystalline silicon layer.

Embodiment seven

Present embodiment provides a kind of silicon-based film solar cells manufacturing installation, is specially amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells manufacturing installation, and the structure of described amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells as shown in Figure 3.Wherein said the first process chamber is the amorphous silicon process chamber, and p type semiconductor layer, intrinsic semiconductor layer, the n type semiconductor layer that deposits in described amorphous silicon process chamber is followed successively by P type amorphous silicon layer, intrinsic amorphous silicon layer, N-type amorphous silicon layer; In like manner, the second process chamber is the microcrystal silicon process chamber, and p type semiconductor layer, intrinsic semiconductor layer, the n type semiconductor layer that deposits in described microcrystal silicon process chamber is followed successively by P type microcrystal silicon layer, intrinsic microcrystalline silicon layer, N-type microcrystal silicon layer.Referring to shown in Figure 13, described manufacturing installation comprises:

One or more described amorphous silicon process chambers 33, be used for forming successively on described transparent electrode layer described P type amorphous silicon layer, described intrinsic amorphous silicon layer and described N-type amorphous silicon layer, the end that described amorphous silicon process chamber 33 connects described vacuum transmission chamber 35 is provided with valve 30;

One or more described microcrystal silicon process chambers 34, be used for forming successively on described N-type amorphous silicon layer described P type microcrystal silicon layer, described intrinsic microcrystalline silicon layer and described N-type microcrystal silicon layer, the end that described microcrystal silicon process chamber 34 connects described vacuum transmission chamber 35 is provided with valve 30;

Vacuum transmission chamber 35, connect respectively described LOADED CAVITY 31, described unloading chamber 32, described amorphous silicon process chamber 33 and described microcrystal silicon process chamber 34, described vacuum transmission chamber 35 comprises conveying robot 36, described conveying robot 36 is used for comprising that the substrate of transparent electrode layer transfers to described amorphous silicon process chamber 33 from described LOADED CAVITY 31, the substrate that will comprise described N-type amorphous silicon layer transfers to described microcrystal silicon process chamber 34 from described amorphous silicon process chamber 33, and the board transport that will comprise described N-type microcrystal silicon layer is to described unloading chamber 32;

The control module (not shown), after forming described P type amorphous silicon layer and before forming described intrinsic amorphous silicon layer, described control module is controlled the substrate that described conveying robot 36 will comprise P type amorphous silicon layer and is taken out from described amorphous silicon process chamber 33, and described amorphous silicon process chamber 33 is cleaned; After cleaning, described control module is controlled described conveying robot 36 will comprise that the board transport of described P type amorphous silicon layer is to described amorphous silicon process chamber 33, to form successively described intrinsic amorphous silicon layer and described N-type amorphous silicon layer on described P type amorphous silicon layer; Then control module is controlled board transport that described conveying robot 36 will comprise described N-type amorphous silicon layer to described microcrystal silicon process chamber 34, makes described substrate deposit described P type microcrystal silicon layer in described microcrystal silicon process chamber 34; After forming described P type microcrystal silicon layer and before forming described intrinsic microcrystalline silicon layer, described control module is controlled the substrate that described conveying robot 36 will comprise described P type microcrystal silicon layer and is taken out from described microcrystal silicon process chamber 34, and described microcrystal silicon process chamber 34 is cleaned; After cleaning, described control module is controlled board transport that described conveying robot 36 will comprise P type microcrystal silicon layer to microcrystal silicon process chamber 34, to form successively described intrinsic microcrystalline silicon layer and described N-type microcrystal silicon layer on described P type microcrystal silicon layer;

One or more gas extraction system (not shown)s are used for discharging described amorphous silicon process chamber 33 or described microcrystal silicon process chamber 34 interior gases;

One or more cleaning source system (not shown)s are used to described amorphous silicon process chamber 33 or described microcrystal silicon process chamber 34 that clean air is provided.

The course of work of control module control formation described P type amorphous silicon layer, described intrinsic amorphous silicon layer and described N-type amorphous silicon layer is identical with embodiment five in the present embodiment, the course of work that control module control forms described P type microcrystal silicon layer, described intrinsic microcrystalline silicon layer and described N-type microcrystal silicon layer is identical with embodiment six, does not repeat them here.

In some more excellent embodiment of the present invention, described N-type amorphous silicon layer can not form in described amorphous silicon process chamber 33, and described N-type microcrystal silicon layer can not form in described microcrystal silicon process chamber 34, this moment, described manufacturing installation also comprised: N-type process chamber (scheming not shown), described N-type process chamber is N-type amorphous silicon process chamber and N-type microcrystal silicon process chamber, is respectively applied to form the N-type amorphous silicon layer and form the N-type microcrystal silicon layer in intrinsic microcrystalline silicon layer in intrinsic amorphous silicon layer.

In some more excellent embodiment of the present invention, the number of described microcrystal silicon process chamber 34 can be the twice of amorphous silicon process chamber 33 numbers, this is because the manufacturing time of amorphous silicon battery approximately is half of microcrystal silicon battery manufacture time, by the number ratio in different disposal chamber reasonably is set, can enhance productivity substantially.

In some more excellent embodiment of the present invention, described amorphous silicon process chamber 33 and described microcrystal silicon process chamber 34 can share same gas extraction system or cleaning source system, thereby further reduce the cost of silicon-based film solar cells manufacturing installation.

Embodiment eight

Present embodiment provides a kind of silicon-based film solar cells manufacturing installation, is specially amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells manufacturing installation, and described amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells are as shown in Figure 3.Wherein, described the first process chamber is amorphous silicon process chamber and microcrystal silicon process chamber, p type semiconductor layer is P type amorphous silicon layer or P type microcrystal silicon layer, intrinsic semiconductor layer is intrinsic amorphous silicon layer or intrinsic microcrystalline silicon layer, n type semiconductor layer is N-type amorphous silicon layer or N-type microcrystal silicon layer, referring to shown in Figure 14, described manufacturing installation comprises:

One or more first process chambers 38, be used on described transparent electrode layer, forming successively described P type amorphous silicon layer, described intrinsic amorphous silicon layer and described N-type amorphous silicon layer, and form successively described P type microcrystal silicon layer, described intrinsic microcrystalline silicon layer and described N-type microcrystal silicon layer on the N-type amorphous silicon layer, the end that described the first process chamber 38 connects vacuum transmission chamber 35 is provided with valve 30;

Vacuum transmission chamber 35, connect respectively described LOADED CAVITY 31, described unloading chamber 32 and described the first process chamber 38, described vacuum transmission chamber 35 comprises conveying robot 36, described conveying robot 36 is used for comprising that the substrate of transparent electrode layer transfers to described the first process chamber 38 from LOADED CAVITY 31, and the board transport that will comprise the N-type microcrystal silicon layer is to described unloading chamber 32;

The control module (not shown), after forming described P type amorphous silicon layer and before forming described intrinsic amorphous silicon layer, described control module is controlled the substrate that described conveying robot 36 will comprise described P type amorphous silicon layer and is taken out from the first process chamber 38, and the first process chamber 38 is cleaned; After described cleaning, described control module is controlled in board transport to the first process chamber 38 that described conveying robot 36 will comprise described P type amorphous silicon layer, to form successively intrinsic amorphous silicon layer and N-type amorphous silicon layer on described P type amorphous silicon layer; After forming described N-type amorphous silicon layer, described control module is controlled the substrate that described conveying robot 36 will comprise described N-type amorphous silicon layer and is taken out from described the first process chamber 38, and described the first process chamber 38 is cleaned; Described control module is controlled board transport to the first process chamber 38 that described conveying robot will comprise described N-type amorphous silicon layer, to form described P type microcrystal silicon layer at described N-type amorphous silicon layer; Described control module is controlled the substrate that described conveying robot 36 will comprise described P type microcrystal silicon layer and is taken out from described the first process chamber 38, so that described the first process chamber 38 is cleaned; After described cleaning, described control module is controlled in board transport to the first process chamber 38 that described conveying robot 36 will comprise P type microcrystal silicon layer, forms described intrinsic microcrystalline silicon layer and described N-type microcrystal silicon layer at described P type microcrystal silicon layer;

One or more gas extraction system (not shown)s are used for discharging described the first reason chamber 38 interior gases;

One or more cleaning source system (not shown)s are used to described the first process chamber 38 that clean air is provided.

The difference of present embodiment and embodiment seven is: amorphous silicon battery and microcrystal silicon battery all form in same process chamber in the present embodiment, have further reduced the number of process chamber, have saved the production cost of thin-film solar cells.

In above-described embodiment five to embodiment eight described manufacturing installations, comprise simultaneously described LOADED CAVITY 31 and described unloading chamber 32, namely adopt different chambers to carry out substrate and load and unload.Need to prove, in other embodiments of the invention, can adopt same chamber to carry out substrate and load and unload, with the number of further minimizing chamber.

Although the own preferred embodiment of the present invention discloses as above, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can make various changes and modification, so protection scope of the present invention should be as the criterion with the claim limited range.

Claims

1. silicon-based film solar cells manufacture method comprises:

Form n type semiconductor layer in described intrinsic semiconductor layer.

2. silicon-based film solar cells manufacture method as claimed in claim 1, it is characterized in that, described silicon-based film solar cells is amorphous silicon thin-film solar cell, described the first process chamber is the amorphous silicon process chamber, described p type semiconductor layer is P type amorphous silicon layer, described intrinsic semiconductor layer is intrinsic amorphous silicon layer, and described n type semiconductor layer is the N-type amorphous silicon layer.

3. silicon-based film solar cells manufacture method as claimed in claim 2 is characterized in that, the time that described the first process chamber is cleaned was more than or equal to 20 seconds and be less than or equal to 200 seconds.

4. silicon-based film solar cells manufacture method as claimed in claim 1, it is characterized in that, described silicon-based film solar cells is the microcrystalline silicon film solar cell, described the first process chamber is the microcrystal silicon process chamber, described p type semiconductor layer is P type microcrystal silicon layer, described intrinsic semiconductor layer is intrinsic microcrystalline silicon layer, and described n type semiconductor layer is the N-type microcrystal silicon layer.

5. silicon-based film solar cells manufacture method as claimed in claim 4 is characterized in that, the time that described the first process chamber is cleaned was more than or equal to 40 seconds and be less than or equal to 400 seconds.

6. silicon-based film solar cells manufacture method as claimed in claim 1, it is characterized in that, described silicon-based film solar cells is amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells, described the first process chamber is the amorphous silicon process chamber, described p type semiconductor layer is P type amorphous silicon layer, described intrinsic semiconductor layer is intrinsic amorphous silicon layer, and described n type semiconductor layer is the N-type amorphous silicon layer.

7. silicon-based film solar cells manufacture method as claimed in claim 6 is characterized in that, described chemical vapor deposition unit also comprises: the second process chamber, and described the second process chamber is the microcrystal silicon process chamber, described method also comprises:

To comprise in board transport to the second process chamber of N-type amorphous silicon layer, form P type microcrystal silicon layer at described N-type amorphous silicon layer;

The substrate that will comprise P type microcrystal silicon layer takes out from described the second process chamber, and described the second process chamber is cleaned;

To comprise in board transport to the second process chamber of P type microcrystal silicon layer, form intrinsic microcrystalline silicon layer at described P type microcrystal silicon layer;

Form the N-type microcrystal silicon layer in described intrinsic microcrystalline silicon layer.

8. silicon-based film solar cells manufacture method as claimed in claim 1 is characterized in that, described cleaning is that in-situ plasma is cleaned or remote plasma cleans.

9. silicon-based film solar cells manufacture method as claimed in claim 1 is characterized in that, the time that described the first process chamber is cleaned was directly proportional with the time that forms described p type semiconductor layer.

10. silicon-based film solar cells manufacture method as claimed in claim 1 is characterized in that, also comprises: when described the first process chamber is cleaned, the substrate that takes out from the first process chamber is carried out heat treated.

11. silicon-based film solar cells manufacture method as claimed in claim 1 is characterized in that, also comprises: before the substrate that will comprise described p type semiconductor layer takes out from described the first process chamber, form passivation layer at described p type semiconductor layer.

12. silicon-based film solar cells manufacture method as claimed in claim 1, it is characterized in that, also comprise: n type semiconductor layer forms in the first process chamber, after forming described n type semiconductor layer, the substrate that will comprise n type semiconductor layer takes out from described the first process chamber, and described the first process chamber is cleaned.

13. silicon-based film solar cells manufacture method as claimed in claim 1; it is characterized in that; also comprise: after forming described n type semiconductor layer; the substrate that will comprise n type semiconductor layer takes out from described the first process chamber, forms successively back electrode and baffle on described n type semiconductor layer.

14. silicon-based film solar cells manufacture method as claimed in claim 1, it is characterized in that, described chemical vapor deposition unit also comprises: the vacuum transmission chamber, described vacuum transmission chamber connects described the first process chamber, described vacuum transmission chamber comprises conveying robot, when described the first process chamber was cleaned, described substrate was positioned at described handling machinery on hand.

15. silicon-based film solar cells manufacture method as claimed in claim 1 is characterized in that, described chemical vapor deposition unit is plasma enhanced chemical vapor deposition unit.

16. silicon-based film solar cells manufacture method as claimed in claim 1, it is characterized in that, described chemical vapor deposition unit also comprises: the N-type process chamber, forming n type semiconductor layer in described intrinsic semiconductor layer comprises: the substrate that will comprise intrinsic semiconductor layer transfers to the N-type process chamber from described the first process chamber, forms n type semiconductor layer in described N-type process chamber.

17. such as claim 12 or 16 described silicon-based film solar cells manufacture methods, it is characterized in that, described silicon-based film solar cells is amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells, described the first process chamber is amorphous silicon process chamber and microcrystal silicon process chamber, described p type semiconductor layer is P type amorphous silicon layer, and described intrinsic semiconductor layer is intrinsic amorphous silicon layer, and described n type semiconductor layer is the N-type amorphous silicon layer, after forming the N-type amorphous silicon layer, described method also comprises:

Clean described the first process chamber;

Board transport to the first process chamber that will comprise the N-type amorphous silicon layer forms P type microcrystal silicon layer at described N-type amorphous silicon layer;

The substrate that will comprise P type microcrystal silicon layer takes out from described the first process chamber, and described the first process chamber is cleaned;

To comprise in board transport to the first process chamber of P type microcrystal silicon layer, form intrinsic microcrystalline silicon layer at described P type microcrystal silicon layer;

18. a silicon-based film solar cells manufacturing installation comprises:

It is characterized in that, also comprise: control module, after forming described p type semiconductor layer and before forming described intrinsic semiconductor layer, described control module is controlled the substrate that described conveying robot will comprise p type semiconductor layer and is taken out from described the first process chamber, controls the first process chamber and cleans; After described cleaning, described control module is controlled in board transport to the first process chamber that described conveying robot will comprise p type semiconductor layer, to form intrinsic semiconductor layer at described p type semiconductor layer.

19. silicon-based film solar cells manufacturing installation as claimed in claim 18 is characterized in that, described control module is also controlled described the first process chamber and is formed n type semiconductor layer in described intrinsic semiconductor layer.

20. silicon-based film solar cells manufacturing installation as claimed in claim 18, it is characterized in that, also comprise: the N-type process chamber, connect described vacuum transmission chamber, after forming described intrinsic semiconductor layer, described control module is controlled the substrate that described conveying robot will comprise intrinsic semiconductor layer and is transferred in the N-type process chamber from the first process chamber, and controls described N-type process chamber and form n type semiconductor layer in described intrinsic semiconductor layer.

21. such as claim 19 or 20 described silicon-based film solar cells manufacturing installations, it is characterized in that, described silicon-based film solar cells is amorphous silicon thin-film solar cell, described the first process chamber is the amorphous silicon process chamber, described p type semiconductor layer is P type amorphous silicon layer, described intrinsic semiconductor layer is intrinsic amorphous silicon layer, and described n type semiconductor layer is the N-type amorphous silicon layer.

22. such as claim 19 or 20 described silicon-based film solar cells manufacturing installations, it is characterized in that, described silicon-based film solar cells is the microcrystalline silicon film solar cell, described the first process chamber is the microcrystal silicon process chamber, described p type semiconductor layer is P type microcrystal silicon layer, described intrinsic semiconductor layer is intrinsic microcrystalline silicon layer, and described n type semiconductor layer is the N-type microcrystal silicon layer.

23. such as claim 19 or 20 described silicon-based film solar cells manufacturing installations, it is characterized in that, described silicon-based film solar cells is amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells, described the first process chamber is the amorphous silicon process chamber, described p type semiconductor layer is P type amorphous silicon layer, described intrinsic semiconductor layer is intrinsic amorphous silicon layer, and described n type semiconductor layer is the N-type amorphous silicon layer.

24. silicon-based film solar cells manufacturing installation as claimed in claim 23, it is characterized in that, also comprise: the second process chamber, be connected with described vacuum transmission chamber, described the second process chamber is the microcrystal silicon process chamber, is used for forming P type microcrystal silicon layer and intrinsic microcrystalline silicon layer at described N-type amorphous silicon layer; After forming described N-type amorphous silicon layer, described control module is controlled in board transport to the second process chamber that described conveying robot will comprise the N-type amorphous silicon layer, and controls described the second process chamber and form P type microcrystal silicon layer at described N-type amorphous silicon layer; After forming described P type microcrystal silicon layer and before the described intrinsic microcrystalline silicon layer of formation, described control module is controlled the substrate that described conveying robot will comprise P type microcrystal silicon layer and is taken out from described the second process chamber, controls the second process chamber and cleans; After described cleaning, described control module is controlled in board transport to the second process chamber that described conveying robot will comprise P type microcrystal silicon layer, and controls described the second process chamber and form intrinsic microcrystalline silicon layer at described P type microcrystal silicon layer.

25. silicon-based film solar cells manufacturing installation as claimed in claim 24 is characterized in that, the number of described the second process chamber is the twice of the number of described the first process chamber.

26. such as claim 19 or 20 described silicon-based film solar cells manufacturing installations, it is characterized in that, described silicon-based film solar cells is amorphous silicon and crystalline/micro-crystalline silicon laminated thin-film solar cells, described the first process chamber is amorphous silicon process chamber and microcrystal silicon process chamber, described p type semiconductor layer is P type amorphous silicon layer, described intrinsic semiconductor layer is intrinsic amorphous silicon layer, described n type semiconductor layer is the N-type amorphous silicon layer, after forming the N-type amorphous silicon layer, the substrate that will comprise the N-type amorphous silicon layer takes out from the first process chamber, and described the first process chamber is cleaned in described control module control; Described control module is controlled board transport to the first process chamber that described conveying robot will comprise the N-type amorphous silicon layer, to form P type microcrystal silicon layer at described N-type amorphous silicon layer; Described control module is controlled the substrate that described conveying robot will comprise P type microcrystal silicon layer and is taken out from described the first process chamber, so that described the first process chamber is cleaned; Described control module is controlled in board transport to the first process chamber that described conveying robot will comprise P type microcrystal silicon layer, forms intrinsic microcrystalline silicon layer at described P type microcrystal silicon layer.

27. silicon-based film solar cells manufacturing installation as claimed in claim 18, it is characterized in that, before the substrate that will comprise p type semiconductor layer took out from described the first process chamber, described control module was also controlled described the first process chamber and is formed passivation layer at described p type semiconductor layer.

28. silicon-based film solar cells manufacturing installation as claimed in claim 18 is characterized in that, described vacuum transmission is provided with heater in the chamber, is used for the substrate that comprises described p type semiconductor layer is heated.

29. silicon-based film solar cells manufacturing installation as claimed in claim 18, it is characterized in that, described the first process chamber comprises two-layer at least the first process chamber, described conveying robot comprises two-layer at least load bearing arm, and described conveying robot is used for taking out at least two described substrates or inciting somebody to action simultaneously at least two described board carryings to described the first process chamber from described the first process chamber simultaneously.

30. silicon-based film solar cells manufacturing installation as claimed in claim 29 is characterized in that, also comprises: gas extraction system is used for discharging intracavity gas; The cleaning source system is used for providing clean air; Each described first process chamber shares described gas extraction system or cleaning source system.

31. silicon-based film solar cells manufacturing installation as claimed in claim 24 is characterized in that, also comprises: gas extraction system is used for discharging intracavity gas; The cleaning source system is used for providing clean air; Described the first process chamber and described the second process chamber share described gas extraction system or cleaning source system.