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CN102798387B - The huge piezoresistive effect microthrust test of a kind of SOI base - Google Patents

The huge piezoresistive effect microthrust test of a kind of SOI base Download PDF

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CN102798387B
CN102798387B CN201210329775.4A CN201210329775A CN102798387B CN 102798387 B CN102798387 B CN 102798387B CN 201210329775 A CN201210329775 A CN 201210329775A CN 102798387 B CN102798387 B CN 102798387B
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comb
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CN102798387A (en
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刘俊
李孟委
李锡广
王莉
杜康
石云波
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North University of China
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Abstract

本发明公开了一种SOI基巨压阻效应微陀螺,主要结构包括:键合基板和微陀螺角速率敏感体。键合基板上表面中间位置刻蚀有矩形底槽;微陀螺角速率敏感体设在键合基板上表面并与键合基板相连接。微陀螺角速率敏感体进一步包括:键合基板左、右侧上表面分布的固定梳齿电极正极;前、后侧上表面分布的梳齿电极负极;固定梳齿电极正极上表面设置的固定梳齿结构;梳齿电极负极上表面设置的固定座;对应设在底槽上方的敏感质量块,敏感质量块上表面均匀分布有阻尼孔;敏感质量块通过组合梁与固定座相连接;组合梁的检测梁根部设有硅纳米线电阻作为敏感机构。根据本发明实施例的微机械陀螺采用整体结构设计,结构合理、紧凑,检测电路简单,使用方便、可靠性好、适合微型化。

The invention discloses an SOI-based giant piezoresistive effect micro-gyroscope, which mainly includes a bonded substrate and a micro-gyroscope angular rate sensitive body. A rectangular bottom groove is etched in the middle of the upper surface of the bonding substrate; the micro-gyroscope angular rate sensitive body is arranged on the upper surface of the bonding substrate and connected with the bonding substrate. The micro-gyroscope angular rate sensitive body further includes: fixed comb-teeth electrode positive poles distributed on the left and right upper surfaces of the bonding substrate; comb-teeth electrode negative poles distributed on the front and rear sides; Tooth structure; the fixed seat provided on the upper surface of the negative electrode of the comb-toothed electrode; corresponding to the sensitive mass block above the bottom groove, damping holes are evenly distributed on the upper surface of the sensitive mass block; the sensitive mass block is connected to the fixed seat through a composite beam; the composite beam The root of the detection beam is equipped with a silicon nanowire resistor as a sensitive mechanism. The micromechanical gyroscope according to the embodiment of the present invention adopts an overall structural design, has a reasonable and compact structure, a simple detection circuit, is convenient to use, has good reliability, and is suitable for miniaturization.

Description

一种SOI基巨压阻效应微陀螺An SOI-Based Giant Piezoresistive Effect Microgyroscope

技术领域 technical field

本发明涉及微惯性导航关键器件研究领域,具体涉及一种SOI基巨压阻效应的微机械陀螺。 The invention relates to the research field of key components of micro-inertial navigation, in particular to an SOI-based micromechanical gyroscope with giant piezoresistive effect.

背景技术 Background technique

目前,微机械陀螺常用的检测方式是电容式和压阻式,压阻式是基于高掺杂硅的压阻效应原理实现的,由于硅压敏电阻的电阻应变系数较小,随着传感器尺寸的变小,传统掺杂工艺的压敏电阻已经不能满足现代高灵敏度测试的要求;电容式精度的提高是利用增大电容面积,由于器件的微小型化,其精度因有效电容面积的缩小而难以提高。 At present, the commonly used detection methods for micromechanical gyroscopes are capacitive and piezoresistive. The piezoresistive type is based on the principle of piezoresistive effect of highly doped silicon. Since the resistance gauge coefficient of silicon piezoresistors is small, with the sensor size The varistors of the traditional doping process can no longer meet the requirements of modern high-sensitivity testing; the improvement of capacitive precision is to increase the capacitance area. Due to the miniaturization of the device, its accuracy is reduced by the reduction of the effective capacitance area. Difficult to improve.

微机械陀螺对角速度的测量是靠检测装置实现力电转换来完成的,其灵敏度、分辨率是十分重要的,由于陀螺仪微型化和集成化,检测的敏感区域随之减小,故而使检测的灵敏度、分辨率等指标已达到敏感区域检测的极限状态,从而限制了陀螺仪检测精度的进一步提高,很难满足现代军事、民用装备的需要。 The measurement of the angular velocity of the micro-mechanical gyroscope is completed by the detection device to realize the force-electric conversion. Its sensitivity and resolution are very important. Due to the miniaturization and integration of the gyroscope, the sensitive area of the detection is reduced accordingly, so the detection The sensitivity, resolution and other indicators of gyroscopes have reached the limit state of sensitive area detection, which limits the further improvement of gyroscope detection accuracy, and it is difficult to meet the needs of modern military and civilian equipment.

发明内容 Contents of the invention

本发明旨在至少解决现有技术中存在的技术问题之一。 The present invention aims to solve at least one of the technical problems existing in the prior art.

有鉴于此,本发明需要提供微机械陀螺,该微机械陀螺为SOI(Silicon-On-Insulator,绝缘衬底上的硅)基巨压阻效应的微机械陀螺,至少可以提高微机械陀螺的检测精度。 In view of this, the present invention needs to provide a micromachined gyroscope, which is a SOI (Silicon-On-Insulator, silicon on an insulating substrate) micromachined gyroscope with a giant piezoresistive effect, which can at least improve the detection of a micromachined gyroscope. precision.

本发明提供了一种微机械陀螺,包括:键合基板,所述的键合基板上表面刻蚀有为敏感质量块提供运动的底槽;微陀螺角速率敏感体,所述的微陀螺角速率敏感体设在键合基板上方,并与键合基板粘结牢固,且微陀螺角速率敏感体包括:固定梳齿电极正极,设在键合基板左、右侧的上表面;梳齿电极负极,设在键合基板前、后侧的上表面;固定梳齿,设在固定梳齿电极正极上表面;固定座,设在梳齿电极负极上表面;敏感质量块,设在底槽上方,表面均匀分布有通孔阻尼孔;驱动梳齿,设在敏感质量块左右两侧的边缘,并与固定梳齿交叉吻合;组合梁,用于连接敏感质量块和固定座;硅纳米线电阻层,作为敏感机构设在组合梁的检测梁根部。 The invention provides a micromechanical gyroscope, comprising: a bonding substrate, the upper surface of the bonding substrate is etched with a bottom groove for providing movement for a sensitive mass; The rate sensitive body is set above the bonding substrate, and is firmly bonded to the bonding substrate, and the micro-gyroscope angular rate sensitive body includes: a fixed comb-tooth electrode positive electrode, which is arranged on the upper surface of the left and right sides of the bonding substrate; the comb-tooth electrode The negative electrode is arranged on the upper surface of the front and rear sides of the bonding substrate; the fixed comb is arranged on the upper surface of the positive electrode of the fixed comb electrode; the fixed seat is arranged on the upper surface of the negative electrode of the comb electrode; the sensitive mass is arranged above the bottom groove , with through-hole damping holes evenly distributed on the surface; the driving combs are set on the edges of the left and right sides of the sensitive mass and coincide with the fixed combs; the composite beam is used to connect the sensitive mass and the fixed seat; the silicon nanowire resistance Layer, as a sensitive mechanism, is set at the root of the detection beam of the composite beam.

根据本发明实施例的微机械陀螺,采用整体结构设计,结构设计紧凑合理,既能充分利用空间,又能抑制驱动对检测的影响,适合器件的自解耦和微型化。硅纳米线电阻由硅纳米线电阻层、硅纳米线电阻正极、硅纳米线电阻负极组成,硅纳米线电阻层所具有巨压阻效应比传统的硅压阻器件的压阻灵敏度高约2个数量级,可大幅提高硅压阻式传感器的检测灵敏度和分辨率,是一种十分理想的提高硅基压阻式MEMS器件的方法。除以上特点外,该微陀螺角速率敏感体的检测电路设计简单、使用方便、可靠性好,适合微型化。 The micromechanical gyro according to the embodiment of the present invention adopts an overall structural design, which is compact and reasonable, can not only make full use of space, but also suppress the influence of driving on detection, and is suitable for self-decoupling and miniaturization of devices. The silicon nanowire resistor is composed of a silicon nanowire resistor layer, a silicon nanowire resistor positive electrode, and a silicon nanowire resistor negative electrode. The giant piezoresistive effect of the silicon nanowire resistor layer is about 2 times higher than the piezoresistive sensitivity of traditional silicon piezoresistive devices. It can greatly improve the detection sensitivity and resolution of silicon piezoresistive sensors, and is an ideal method for improving silicon-based piezoresistive MEMS devices. In addition to the above features, the detection circuit of the micro-gyroscope angular rate sensitive body is simple in design, easy to use, good in reliability, and suitable for miniaturization.

根据本发明的一个实施例,所述的键合基板整体为矩形结构,其上设有矩形凹槽即底槽。可为微陀螺角速率敏感体仪的敏感质量块的上下、左右运动提供空间。 According to an embodiment of the present invention, the bonding substrate has a rectangular structure as a whole, and a rectangular groove, that is, a bottom groove, is provided on it. Space can be provided for the up and down, left and right movements of the sensitive mass block of the micro-gyro angular rate sensitive body instrument.

根据本发明的一个实施例,所述的微陀螺角速率敏感体进一步包括:固定梳齿电极正极,所述的固定梳齿电极正极为两个,分别置于键合基板左、右边框的上表面并粘结牢固,并且该电极上表面设固定梳齿,并粘结牢固;梳齿电极负极,所述的梳齿电极负极为敏感质量块左、右两侧驱动梳齿的电极,该电极与固定梳齿电极正极在同一平面,置于键合基板前、后边框上表面,并粘结牢固,并且该电极的上表面设固定座,并粘结牢固;敏感质量块,所述的敏感质量块表面均布通孔阻尼孔。敏感质量块左、右两侧边缘均匀分布有驱动梳齿,敏感质量块通过组合梁与固定座相连接。组合梁,所述的组合梁由驱动梁、检测梁、连接块构成,用于连接固定座和敏感质量块,检测梁的上表面设有硅纳米线电阻。 According to an embodiment of the present invention, the micro-gyroscope angular rate sensitive body further includes: a fixed positive electrode of the comb electrode, and two fixed positive electrodes of the fixed comb electrode are respectively placed on the left and right frames of the bonding substrate The surface of the electrode is firmly bonded, and the upper surface of the electrode is provided with fixed comb teeth, which are firmly bonded; the negative electrode of the comb electrode is the electrode that drives the comb teeth on the left and right sides of the sensitive mass. It is on the same plane as the positive electrode of the fixed comb electrode, placed on the upper surface of the front and rear frames of the bonding substrate, and bonded firmly, and the upper surface of the electrode is provided with a fixed seat, and bonded firmly; the sensitive mass, the sensitive Through-hole damping holes are evenly distributed on the surface of the mass block. Driving combs are evenly distributed on the left and right edges of the sensitive mass, and the sensitive mass is connected to the fixed seat through a composite beam. A composite beam, the composite beam is composed of a drive beam, a detection beam, and a connecting block, and is used to connect the fixed seat and the sensitive mass block, and the upper surface of the detection beam is provided with a silicon nanowire resistor.

根据本发明的一个实施例,所述的固定梳齿电极上设有所述固定梳齿的基座;所述的梳齿电极负极上设有所述的固定座,固定座有前、后两个,分别置于两个梳齿电极负极上表面,并通过组合梁与敏感质量块相连接;固定座与组合梁相连接部位的上表面设有硅纳米线电阻电极。 According to an embodiment of the present invention, the fixed comb electrode is provided with a base for the fixed comb; the negative electrode of the comb electrode is provided with the fixed seat, and the fixed seat has front and rear two One, respectively placed on the upper surface of the two comb-teeth electrode negative electrodes, and connected with the sensitive mass block through the composite beam; the upper surface of the connection part between the fixed seat and the composite beam is provided with a silicon nanowire resistance electrode.

根据本发明的一个实施例,所述的敏感质量块为矩形,且内嵌在键合基板的底槽中,并可在此底槽中上、下、前、后、左右运动;所述的敏感质量块前、后对称位置分别通过组合梁与固定座相连接。 According to an embodiment of the present invention, the sensitive mass is rectangular, embedded in the bottom groove of the bonding substrate, and can move up, down, forward, backward, left and right in the bottom groove; the The front and rear symmetrical positions of the sensitive mass are respectively connected to the fixed seat through the composite beam.

根据本发明的一个实施例,所述的组合梁呈回折形,驱动梁和检测梁通过连接块相连接,连接块两端为“几”字形驱动梁,连接块中间位置设检测梁;组合梁中驱动梁的厚度与敏感质量块的厚度相同,检测梁的厚度小于两侧驱动梁,在;检测梁靠近固定座一端的根部上表面设有硅纳米线电阻。 According to an embodiment of the present invention, the composite beam is in a folded shape, the driving beam and the detection beam are connected through a connecting block, the two ends of the connecting block are drive beams in the shape of a "ji", and the detection beam is arranged in the middle of the connecting block; the composite beam The thickness of the driving beam in the middle is the same as that of the sensitive mass block, the thickness of the detecting beam is smaller than that of the driving beams on both sides, and silicon nanowire resistors are arranged on the upper surface of the root of the detecting beam near the end of the fixed seat.

根据本发明的一个实施例,所述的固定梳齿与所述敏感质量块两侧边缘的驱动梳齿交叉吻合。 According to an embodiment of the present invention, the fixed combs coincide with the driving combs on both sides of the sensitive mass.

根据本发明的一个实施例,所述的敏感质量块的四角对称位置加工有组合梁运动空间,组合梁分别嵌于组合梁运动空间内,组合梁可在组合梁运动空间内上下、左右、前后运动。 According to an embodiment of the present invention, the four-corner symmetrical position of the sensitive mass is processed with a composite beam movement space, and the composite beams are respectively embedded in the composite beam movement space, and the composite beam can move up and down, left and right, forward and backward in the composite beam movement space sports.

根据本发明的一个实施例,所述的检测梁的硅衬底层上制作有二氧化硅层,二氧化硅层上制作有折形的硅纳米线电阻层,硅纳米线电阻层的两端分别连接有硅纳米线电阻正极、硅纳米线电阻负极。 According to an embodiment of the present invention, a silicon dioxide layer is formed on the silicon substrate layer of the detection beam, and a folded silicon nanowire resistance layer is formed on the silicon dioxide layer. The two ends of the silicon nanowire resistance layer are respectively The positive electrode of the silicon nanowire resistor and the negative electrode of the silicon nanowire resistor are connected.

根据本发明的一个实施例,所述硅纳米线电阻层采用SOI材料制成。 According to an embodiment of the present invention, the silicon nanowire resistance layer is made of SOI material.

附图说明 Description of drawings

本发明的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解,其中: The above and/or additional aspects and advantages of the present invention will become apparent and comprehensible from the description of the embodiments in conjunction with the following drawings, wherein:

图1为本发明实施例的整体结构立体图; Fig. 1 is the perspective view of the overall structure of the embodiment of the present invention;

图2为本发明实施例的整体结构平面图; Fig. 2 is the overall structural plan view of the embodiment of the present invention;

图3为本发明实施例的微陀螺角速率敏感体立体结构图; 3 is a three-dimensional structure diagram of a micro-gyroscope angular rate sensitive body according to an embodiment of the present invention;

图4为本发明实施例的敏感质量块平面结构图; Fig. 4 is a plane structure diagram of a sensitive mass block according to an embodiment of the present invention;

图5为本发明实施例的键合基板立体结构图; 5 is a three-dimensional structure diagram of a bonded substrate according to an embodiment of the present invention;

图6为本发明实施例的硅纳米线电阻结构图; Fig. 6 is the silicon nanowire resistance structural diagram of the embodiment of the present invention;

图7为本发明实施例的组合梁立体结构图; Fig. 7 is a three-dimensional structure diagram of a composite beam according to an embodiment of the present invention;

图8为本发明实施例的组合梁三视图; Fig. 8 is a three-view view of a composite beam according to an embodiment of the present invention;

图9为本发明实施例的固定梳齿结构图; Fig. 9 is a structure diagram of a fixed comb according to an embodiment of the present invention;

图中所示,附图标记清单如下: As shown in the figure, the list of reference signs is as follows:

1、敏感质量块,2、阻尼孔,3、固定座,4、固定梳齿基座,5、固定梳齿,6、硅纳米线电阻,7、硅纳米线电阻正极,8、硅纳米线电阻负极,9、驱动梳齿,10、组合梁运动空间,11、驱动梁,12、检测梁,13、连接块,14、梳齿,15、梳齿槽,16、梳齿电极负极,17、固定梳齿电极正极,18、硅衬底层,19、二氧化硅层,20、硅纳米线电阻层,21、键合基板,22、底槽,23、微陀螺角速率敏感体,24、组合梁 1. Sensitive mass, 2. Damping hole, 3. Fixed seat, 4. Fixed comb base, 5. Fixed comb, 6. Silicon nanowire resistor, 7. Silicon nanowire resistor positive electrode, 8. Silicon nanowire Resistor negative electrode, 9, driving comb teeth, 10, composite beam movement space, 11, driving beam, 12, detection beam, 13, connecting block, 14, comb teeth, 15, comb tooth groove, 16, comb tooth electrode negative pole, 17 , positive electrode of fixed comb electrode, 18, silicon substrate layer, 19, silicon dioxide layer, 20, silicon nanowire resistance layer, 21, bonding substrate, 22, bottom groove, 23, micro-gyroscope angular rate sensitive body, 24, composite beam

具体实施方式 detailed description

下面详细描述本发明的实施例,所述实施例的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的,仅用于解释本发明,而不能理解为对本发明的限制。 Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

在本发明的描述中,需要理解的是,术语“上”、“下”、“前”、“后”、“左”、“右”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。 In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "front", "rear", "left", "right" etc. are based on those shown in the accompanying drawings. Orientation or positional relationship is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present invention.

在本发明的描述中,需要说明的是,除非另有明确的规定和限定,术语“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本发明中的具体含义。 In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral Ground connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediary, and it can be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.

硅纳米线电阻是一种新型的硅压阻式电阻,其所表征的巨压阻效应的电阻应变系数高达5000,比传统体加工的硅压阻的电阻应变系数(100左右)高约2个数量级。将这种新型的硅纳米线电阻应用于微机械陀螺的研究是对传统压敏电阻式微机械陀螺的继承与突破。 Silicon nanowire resistors are a new type of silicon piezoresistive resistors. The gauge coefficient of the giant piezoresistive effect represented by it is as high as 5000, which is about 2 times higher than that of silicon piezoresistors processed by traditional bulk (about 100). Magnitude. The application of this new type of silicon nanowire resistance to the research of micromechanical gyroscope is the inheritance and breakthrough of the traditional piezoresistive micromechanical gyroscope.

以下结合附图对本发明做进一步的说明: The present invention will be further described below in conjunction with accompanying drawing:

如图1-2所示,根据本发明的一个实施例的微机械陀螺,包括:键合基板21和微陀螺角速率敏感体23两大部分; As shown in Figures 1-2, the micromechanical gyroscope according to an embodiment of the present invention includes two parts: a bonding substrate 21 and a microgyroscope angular rate sensitive body 23;

具体而言,可以以键合基板21为载体,例如键合基板21可以由半导体材料制成,键合基板21上表面中心位置设有用以为敏感质量块提供运动空间的底槽22。 Specifically, the bonding substrate 21 can be used as a carrier, for example, the bonding substrate 21 can be made of a semiconductor material, and a bottom groove 22 is provided at the center of the upper surface of the bonding substrate 21 to provide a movement space for the sensitive mass.

微陀螺角速率敏感体23可以设在键合基板21的上表面,并与键合基板21相连接,且微陀螺角速率敏感体23可以包括:敏感质量块1,设在底槽22之上,且二者之间间隔隔开,敏感质量块1可以在底槽22中上下、左右、前后振动;固定梳齿5,设在固定梳齿电极正极17上表面,并粘结牢固,且固定梳齿5与敏感质量块1在同一平面;驱动梳齿9,设在敏感质量块1左右两侧,梳齿均布,且与固定梳齿5交叉吻合,二者能够在静电力的作用下驱动敏感质量块1,使其左右振动。 The micro-gyroscope angular rate sensitive body 23 can be arranged on the upper surface of the bonding substrate 21 and be connected to the bonding substrate 21, and the micro-gyroscope angular rate sensitive body 23 can include: a sensitive mass 1 disposed on the bottom groove 22 , and the two are spaced apart, the sensitive mass 1 can vibrate up and down, left and right, front and back in the bottom groove 22; the fixed comb 5 is arranged on the upper surface of the positive electrode 17 of the fixed comb electrode, and is firmly bonded, and fixed The comb teeth 5 and the sensitive mass block 1 are on the same plane; the driving comb teeth 9 are arranged on the left and right sides of the sensitive mass block 1, the comb teeth are evenly distributed, and coincide with the fixed comb teeth 5, and the two can be separated under the action of electrostatic force. Drive the sensitive mass 1 to make it vibrate left and right.

根据本发明实施例的微机械陀螺,采用整体结构设计,结构设计合理紧凑,既能充分利用空间,又能抑制驱动对检测的影响,适合器件的自解耦和微型化。敏感质量块1在静电梳齿9的驱动作用力下,沿X轴方向做线性简谐振动,当陀螺仪在Y轴方向上有角速度输入时,由于哥氏力的作用,敏感质量块1将在Z轴方向上产生进动。此进动将带动组合梁24使检测梁12发生形变,从而引起制作于检测梁12根部的硅纳米线电阻层20发生形变。由于硅纳米线电阻层20具有巨压阻效应,因此微弱的形变就能够使该纳米线电阻层发生剧烈的阻值变化。这样就可以把一个微弱的哥氏力信号转化成一个较强的电学信号,通过对该信号的处理就可以检测出Y轴方向输入角速度的大小。此装置的检测电路设计简单、使用方便、可靠性好,适合微型化 The micromechanical gyro according to the embodiment of the present invention adopts an overall structural design, which is reasonable and compact, can not only make full use of space, but also suppress the influence of driving on detection, and is suitable for self-decoupling and miniaturization of devices. Under the driving force of the electrostatic comb teeth 9, the sensitive mass 1 performs linear simple harmonic vibration along the X-axis direction. When the gyroscope has an angular velocity input in the Y-axis direction, due to the Coriolis force, the sensitive mass 1 will Precession is generated in the Z-axis direction. This precession will drive the composite beam 24 to deform the detection beam 12 , thereby causing the silicon nanowire resistance layer 20 fabricated at the root of the detection beam 12 to deform. Since the silicon nanowire resistance layer 20 has a giant piezoresistive effect, a slight deformation can cause a drastic change in the resistance value of the nanowire resistance layer. In this way, a weak Coriolis force signal can be converted into a strong electrical signal, and the magnitude of the input angular velocity in the Y-axis direction can be detected by processing the signal. The detection circuit design of this device is simple, easy to use, good reliability, suitable for miniaturization

图3所示,根据本发明的一个实施例,微陀螺角速率敏感体23进一步包括:敏感质量块1、固定座3、固定梳齿5、组合梁24、梳齿电极负极16、固定梳齿电极正极17。 As shown in Figure 3, according to an embodiment of the present invention, the micro-gyroscope angular rate sensitive body 23 further includes: a sensitive mass 1, a fixed base 3, a fixed comb 5, a combined beam 24, a negative electrode 16 of a comb electrode, a fixed comb Electrode Positive 17 .

具体而言,所述的固定梳齿电极正极17为两个,分别置于键合基板21左、右边框的上表面并粘结牢固,并且该电极上表面设固定梳齿5,并粘结牢固;所述的梳齿电极负极16为敏感质量块1左、右两侧驱动梳齿9的电极,该电极与固定梳齿电极正极17在同一平面,置于键合基板21前、后边框上表面,并粘结牢固,并且该电极的上表面设固定座3,并粘结牢固;所述的敏感质量块1表面均布通孔阻尼孔2。敏感质量块1左、右两侧边缘均匀分布有驱动梳齿9,敏感质量块1通过组合梁24与固定座3相连接。所述的组合梁24由驱动梁11、检测梁12、连接块13构成,用于连接固定座和敏感质量块,检测梁12的上表面设有硅纳米线电阻6。 Specifically, there are two fixed comb-teeth electrode positive electrodes 17, which are respectively placed on the upper surface of the left and right frames of the bonding substrate 21 and bonded firmly, and the upper surface of the electrode is provided with fixed comb teeth 5, and bonded firm; the comb-teeth electrode negative pole 16 is the electrode that drives the comb teeth 9 on the left and right sides of the sensitive mass 1, and the electrode is on the same plane as the fixed comb-teeth electrode positive pole 17, and is placed on the front and rear frames of the bonding substrate 21 The upper surface of the electrode is firmly bonded, and the upper surface of the electrode is provided with a fixing seat 3, which is firmly bonded; the surface of the sensitive mass 1 is evenly distributed with through-hole damping holes 2. Driving combs 9 are evenly distributed on the left and right edges of the sensitive mass 1 , and the sensitive mass 1 is connected to the fixed seat 3 through the composite beam 24 . The composite beam 24 is composed of a driving beam 11 , a detection beam 12 , and a connecting block 13 , and is used for connecting the fixed seat and the sensitive mass. The upper surface of the detection beam 12 is provided with a silicon nanowire resistor 6 .

图4所示,根据本发明的一个实施例,敏感质量块1呈矩形,通过组合梁24连接于固定座3、的内侧四角部位,内嵌于键合基板21上表面的底槽22中;组合梁24的四角对称位置组合梁运动空间10的形状恰好于组合梁24的外侧边框形状吻合,组合梁4可在组合梁运动空间10内上下、前后、左右运动;敏感质量块1可以用半导体材料制作,在组合梁24的支撑下并可以在此底槽22中前后、左右、上下振动;敏感质量块1的表面均布通孔阻尼孔2;阻尼孔2贯通于敏感质量块1,阻尼孔2可呈圆形,也可呈方形,阻尼孔2的数量的多少及尺寸的大小可根据应用环境和阻尼系数确定。 As shown in FIG. 4 , according to an embodiment of the present invention, the sensitive mass 1 is rectangular, connected to the inner four corners of the fixed seat 3 through a combined beam 24, and embedded in the bottom groove 22 on the upper surface of the bonding substrate 21; The shape of the four-corner symmetric position of the composite beam 24 is just in line with the shape of the outer frame of the composite beam 24, and the composite beam 4 can move up and down, forward and backward, left and right in the composite beam motion space 10; the sensitive mass 1 can be made of a semiconductor Made of material, under the support of the composite beam 24, it can vibrate back and forth, left and right, and up and down in this bottom groove 22; the surface of the sensitive mass 1 is evenly distributed with through-hole damping holes 2; the damping holes 2 penetrate through the sensitive mass 1, and damping The holes 2 can be circular or square, and the number and size of the damping holes 2 can be determined according to the application environment and the damping coefficient.

图5所示,根据本发明的一个实施例,键合基板21呈矩形,上表面的中心位置制作有底槽22,此底槽22能够为敏感质量块1的上下左右前后运动提供运动空间。 As shown in FIG. 5 , according to an embodiment of the present invention, the bonded substrate 21 is rectangular, and a bottom groove 22 is made at the center of the upper surface. The bottom groove 22 can provide a movement space for the sensitive mass 1 to move up, down, left, and right.

图6所示,根据本发明的一个实施例,在硅衬底18上设置有二氧化硅层19,在二氧化硅层19上设置有硅纳米线电阻6,硅纳米线电阻6的两端分别连接有硅纳米线电阻正极7、硅纳米线电阻负极8;硅纳米线电阻层20采用SOI材料制成,上层硅结构经过掺杂后形成具有巨压阻效应的硅纳米线电阻,硅纳米线电阻层20的宽度、长度的大小和回折数量要视微机械陀螺设计参数及应用环境决定;硅纳米线电阻正极7、硅纳米线电阻负极8为金材料,在硅纳米线电阻层20的两端进行良好处理与硅纳米线电阻正极7、硅纳米线电阻负极8形成良好欧姆接触。 As shown in FIG. 6, according to an embodiment of the present invention, a silicon dioxide layer 19 is arranged on a silicon substrate 18, a silicon nanowire resistor 6 is arranged on the silicon dioxide layer 19, and the two ends of the silicon nanowire resistor 6 The silicon nanowire resistor positive electrode 7 and the silicon nanowire resistor negative electrode 8 are respectively connected; the silicon nanowire resistor layer 20 is made of SOI material, and the upper silicon structure is doped to form a silicon nanowire resistor with giant piezoresistive effect. The width of the wire resistance layer 20, the size of the length and the number of turns will depend on the design parameters of the micromachined gyroscope and the application environment; The two ends are well treated to form a good ohmic contact with the positive electrode 7 of the silicon nanowire resistor and the negative electrode 8 of the silicon nanowire resistor.

图7-8所示,根据本发明的一个实施例,组合梁24包括:驱动梁11、检测梁12、连接块13。组合梁24端部为连接块13,在连接块13的左右部对称设置有驱动梁11,在两驱动梁11之间为检测梁12,检测梁12端部接连接块13,三者为一体结构。驱动梁11与连接块13厚度相同,检测梁12的厚度小于驱动梁11和连接块13,连接块13、驱动梁11的厚度与敏感质量块1的厚度相同。保证检测梁12在Z轴方向上的总刚度也远远小于驱动梁11在Z轴方向上的总刚度,可以实现微陀螺角速率敏感体在驱动方向、即X轴方向和检测方向、即Z轴方向上的自解耦;在检测梁12靠近固定座3一端的根部上表面设有硅纳米线电阻层20,此结构即为陀螺仪的敏感结构。 As shown in FIGS. 7-8 , according to an embodiment of the present invention, the combined beam 24 includes: a driving beam 11 , a detecting beam 12 , and a connecting block 13 . The end of the combined beam 24 is a connection block 13, and the drive beam 11 is symmetrically arranged on the left and right parts of the connection block 13, and the detection beam 12 is between the two drive beams 11, and the end of the detection beam 12 is connected to the connection block 13, and the three are integrated structure. The thickness of the driving beam 11 is the same as that of the connecting block 13 , the thickness of the detection beam 12 is smaller than that of the driving beam 11 and the connecting block 13 , and the thickness of the connecting block 13 and the driving beam 11 is the same as that of the sensitive mass 1 . Ensure that the total stiffness of the detection beam 12 in the Z-axis direction is also far less than the total stiffness of the drive beam 11 in the Z-axis direction, so that the angular rate sensitive body of the micro-gyroscope can be adjusted in the driving direction, that is, the X-axis direction, and the detection direction, that is, the Z-axis direction. Self-decoupling in the axial direction; a silicon nanowire resistance layer 20 is provided on the upper surface of the root of the detection beam 12 near the end of the fixing seat 3, and this structure is the sensitive structure of the gyroscope.

如图9所示,根据本发明的一个实施例,固定梳齿包括:固定梳齿基座4、梳齿14、梳齿槽15,固定梳齿基座4的键合于固定梳齿电极正极17之上,固定梳齿5的一侧等间距设置梳齿14,梳齿14之间为梳齿槽15,梳齿14、梳齿槽15与敏感质量块1上的驱动梳齿9交叉关联,固定梳齿5与敏感质量块1的厚度相同。 As shown in Figure 9, according to an embodiment of the present invention, the fixed comb includes: fixed comb base 4, comb 14, comb groove 15, the fixed comb base 4 is bonded to the positive electrode of the fixed comb Above 17, one side of the fixed comb teeth 5 is equidistantly provided with comb teeth 14, between the comb teeth 14 are comb teeth grooves 15, and the comb teeth 14, the comb teeth grooves 15 are cross-connected with the driving comb teeth 9 on the sensitive mass 1 , the thickness of the fixed comb 5 is the same as that of the sensitive mass 1 .

在本说明书的描述中,参考术语“一个实施例”、“一些实施例”、“示意性实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不一定指的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。 In the description of this specification, references to the terms "one embodiment," "some embodiments," "exemplary embodiments," "example," "specific examples," or "some examples" are intended to mean that the implementation A specific feature, structure, material, or characteristic described by an embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

尽管已经示出和描述了本发明的实施例,本领域的普通技术人员可以理解,在不脱离本发明的原理和宗旨的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由权利要求及其等同物限定。 Although the embodiments of the present invention have been shown and described, those skilled in the art can understand that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principle and spirit of the present invention. The scope of the invention is defined by the claims and their equivalents.

Claims (9)

1.一种微机械陀螺,其特征在于,所述微机械陀螺基于SOI基巨压阻效应,具体包括:1. A micro-mechanical gyroscope, characterized in that, said micro-mechanical gyroscope is based on SOI substrate giant piezoresistive effect, specifically comprising: 键合基板,所述的键合基板上表面设有矩形凹槽即底槽;A bonded substrate, the upper surface of the bonded substrate is provided with a rectangular groove, that is, a bottom groove; 微陀螺角速率敏感体,所述的微陀螺角速率敏感体设在键合基板上方,并与键合基板粘结牢固,且微陀螺角速率敏感体包括:键合基板左、右侧上表面分布的固定梳齿电极正极;前、后侧上表面分布的梳齿电极负极;固定梳齿电极正极上表面设置的固定梳齿结构;梳齿电极负极上表面设置的固定座;对应设在底槽上方的敏感质量块,敏感质量块上均匀分布有通孔阻尼孔;敏感质量块通过组合梁与固定座相连接;组合梁的检测梁根部设有硅纳米线电阻作为敏感机构;The micro-gyro angular rate sensitive body, the micro-gyro angular rate sensitive body is arranged above the bonding substrate, and is firmly bonded to the bonding substrate, and the micro-gyro angular rate sensitive body includes: the left and right upper surfaces of the bonding substrate The positive electrode of the fixed comb electrode is distributed; the negative electrode of the comb electrode is distributed on the upper surface of the front and rear sides; the fixed comb structure is arranged on the upper surface of the positive electrode of the fixed comb electrode; The sensitive mass block above the groove has through-hole damping holes evenly distributed on the sensitive mass block; the sensitive mass block is connected to the fixed seat through the composite beam; the root of the detection beam of the composite beam is equipped with a silicon nanowire resistor as a sensitive mechanism; 固定梳齿电极正极,所述的固定梳齿电极正极为两个,分别置于键合基板左、右边框的上表面并粘结牢固,并且该固定梳齿电极正极上表面设固定梳齿,并粘结牢固;The positive pole of the fixed comb-teeth electrode, the positive pole of the fixed comb-teeth electrode is two, respectively placed on the upper surface of the left and right frames of the bonding substrate and bonded firmly, and the upper surface of the fixed comb-teeth electrode positive pole is provided with fixed comb teeth, and firmly bonded; 梳齿电极负极,所述的梳齿电极负极为敏感质量块左、右两侧驱动梳齿的电极,该电极与固定梳齿电极正极在同一平面,置于键合基板前、后边框上表面,并粘结牢固,并且该电极的上表面设固定座,并粘结牢固;The negative electrode of the comb-teeth electrode, the negative electrode of the comb-teeth electrode is the electrode that drives the comb teeth on the left and right sides of the sensitive mass block, the electrode is on the same plane as the positive electrode of the fixed comb-teeth electrode, and placed on the upper surface of the front and rear frames of the bonding substrate , and the bonding is firm, and the upper surface of the electrode is provided with a fixing seat, and the bonding is firm; 敏感质量块,所述的敏感质量块表面均布通孔阻尼孔,敏感质量块左、右两侧边缘均匀分布有驱动梳齿,敏感质量块通过组合梁与固定座相连接;Sensitive mass, the surface of the sensitive mass is evenly distributed with through-hole damping holes, driving comb teeth are evenly distributed on the left and right sides of the sensitive mass, and the sensitive mass is connected to the fixed seat through a composite beam; 组合梁,所述的组合梁由驱动梁、检测梁、连接块构成,用于连接固定座和敏感质量块。A composite beam, the composite beam is composed of a driving beam, a detection beam, and a connecting block, and is used to connect the fixed seat and the sensitive mass block. 2.根据权利要求1所述的微机械陀螺,其特征在于,所述的键合基板整体为矩形结构,可为微陀螺角速率敏感体仪的敏感质量块的上下、左右运动提供空间。2. The micro-mechanical gyroscope according to claim 1, wherein the bonding substrate as a whole has a rectangular structure, which can provide space for the up-down, left-right movement of the sensitive mass of the micro-gyro angular rate sensitive body instrument. 3.根据权利要求1所述的微机械陀螺,其特征在于,所述的固定梳齿电极正极上设有所述固定梳齿的基座;所述的梳齿电极负极上设有所述的固定座,固定座有前、后两个,分别置于两个梳齿电极负极上表面,并通过组合梁与敏感质量块相连接;固定座与组合梁相连接部位的上表面设有硅纳米线电阻电极。3. The micromechanical gyroscope according to claim 1, characterized in that, the positive electrode of the fixed comb electrode is provided with the base of the fixed comb; the negative electrode of the comb electrode is provided with the There are two fixed seats, the front and the back, which are respectively placed on the upper surfaces of the negative electrodes of the two comb-toothed electrodes, and connected to the sensitive mass block through the combined beam; the upper surface of the fixed seat and the combined beam is provided with a silicon nanometer Wire resistance electrodes. 4.根据权利要求1所述的微机械陀螺,其特征在于,所述的敏感质量块为矩形,且内嵌在键合基板的底槽中,并可在此底槽中上、下、前、后、左右运动;所述的敏感质量块前、后对称位置分别通过组合梁与固定座相连接。4. The micromechanical gyroscope according to claim 1, wherein the sensitive mass is rectangular, and is embedded in the bottom groove of the bonding substrate, and can be moved up, down and forward in the bottom groove. , backward and left and right movements; the front and rear symmetrical positions of the sensitive mass are respectively connected to the fixed seat through the composite beam. 5.根据权利要求1所述的微机械陀螺,其特征在于,所述的组合梁呈回折形,驱动梁和检测梁通过连接块相连接,连接块两端为“几”字形驱动梁,连接块中间位置设检测梁;组合梁中驱动梁的厚度与敏感质量块的厚度相同,检测梁的厚度小于两侧驱动梁,在检测梁靠近固定座一端的根部上表面设有硅纳米线电阻。5. The micromechanical gyroscope according to claim 1, wherein the combined beam is in a folded shape, the drive beam and the detection beam are connected through a connecting block, and the two ends of the connecting block are drive beams in the shape of a "several", connected A detection beam is arranged in the middle of the block; the thickness of the driving beam in the combined beam is the same as that of the sensitive mass block, the thickness of the detection beam is smaller than that of the driving beams on both sides, and a silicon nanowire resistor is arranged on the upper surface of the root of the detection beam near the end of the fixed seat. 6.根据权利要求1所述的微机械陀螺,其特征在于,所述的固定梳齿与所述敏感质量块两侧边缘的驱动梳齿交叉吻合。6 . The micromechanical gyroscope according to claim 1 , wherein the fixed combs coincide with the driving combs on both sides of the sensitive mass. 7 . 7.根据权利要求4所述的微机械陀螺,其特征在于,所述的敏感质量块的四角对称位置加工有组合梁运动空间,组合梁分别嵌于组合梁运动空间内,组合梁可在组合梁运动空间内上下、左右、前后运动。7. The micromechanical gyroscope according to claim 4, wherein the four-corner symmetrical position of the sensitive mass is processed with a combined beam movement space, the combined beams are respectively embedded in the combined beam movement space, and the combined beam can be combined The beam moves up and down, left and right, forward and backward in the movement space. 8.根据权利要求5所述的微机械陀螺,其特征在于,所述的检测梁的硅衬底层上制作有二氧化硅层,二氧化硅层上制作有硅纳米线电阻层,硅纳米线电阻层的两端分别连接有硅纳米线电阻正极、硅纳米线电阻负极。8. The micromachined gyroscope according to claim 5, characterized in that, a silicon dioxide layer is made on the silicon substrate layer of the detection beam, a silicon nanowire resistance layer is made on the silicon dioxide layer, and the silicon nanowire Both ends of the resistance layer are respectively connected with a silicon nanowire resistor positive electrode and a silicon nanowire resistor negative electrode. 9.根据权利要求8所述的微机械陀螺,其特征在于,所述硅纳米线电阻层采用SOI材料制成。9. The micromechanical gyroscope according to claim 8, wherein the silicon nanowire resistance layer is made of SOI material.
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US20140190260A1 (en) * 2013-01-09 2014-07-10 Kuan-Wen Chen Mems apparatus
CN105181189B (en) * 2015-10-23 2018-05-29 南京信息工程大学 Silicon nanowire pressure sensor and its encapsulating structure based on huge piezoresistive characteristic
CN107449410A (en) * 2017-08-15 2017-12-08 中北大学 Microthrust test device is detected in electromagnetic drive type tunnel magnetoresistive face
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101042411A (en) * 2007-04-19 2007-09-26 中北大学 Three-axis piezoresistance micro-accelerometer
CN101270990A (en) * 2008-05-06 2008-09-24 中北大学 Detection device of multi-layer nano-film tunneling micro-gyroscope
CN101655368A (en) * 2009-09-26 2010-02-24 中北大学 Electromagnet driven gyroscope based on nanometer film quantum tunneling effect
CN102633227A (en) * 2012-03-16 2012-08-15 中北大学 Film pressure damp adjustable device for MEMS (micro-electromechanical system) inertial sensor structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2917731B1 (en) * 2007-06-25 2009-10-23 Commissariat Energie Atomique DEVICE RESONANT TO PIEZORESISTIVE DETECTION REALIZED IN SURFACE TECHNOLOGIES

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101042411A (en) * 2007-04-19 2007-09-26 中北大学 Three-axis piezoresistance micro-accelerometer
CN101270990A (en) * 2008-05-06 2008-09-24 中北大学 Detection device of multi-layer nano-film tunneling micro-gyroscope
CN101655368A (en) * 2009-09-26 2010-02-24 中北大学 Electromagnet driven gyroscope based on nanometer film quantum tunneling effect
CN102633227A (en) * 2012-03-16 2012-08-15 中北大学 Film pressure damp adjustable device for MEMS (micro-electromechanical system) inertial sensor structure

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