CN102790595B - Single ended differential gain amplifier with configurable radio frequency broadband gain - Google Patents
Single ended differential gain amplifier with configurable radio frequency broadband gain Download PDFInfo
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- CN102790595B CN102790595B CN201110176707.4A CN201110176707A CN102790595B CN 102790595 B CN102790595 B CN 102790595B CN 201110176707 A CN201110176707 A CN 201110176707A CN 102790595 B CN102790595 B CN 102790595B
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Abstract
The invention discloses a single ended differential gain amplifier with a configurable radio frequency broadband gain. The gain amplifier comprises a single ended differential circuit with a configurable gain, a broadband amplifying circuit with the configurable gain and a buffer driving circuit with the configurable gain which are sequentially connected in series. Gain control ends of the circuits are connected with a gain control signal from an outer digital base band processing module to form a gain value of the single ended differential gain amplifier with the configurable radio frequency broadband gain in combination, according to the control of each circuit at a set fixed step pitch, fine adjustment on the gain is implemented, thus a range of the broadband signal output by the differential conforms to a range value of a set signal, and strong disturbance is effectively restrained. Since the strong detection and processing capability of a digital processing module chip of the outer base band is good for a gain control mode, the gain control is enabled not to be affected from temperature, process, noise and the like, and more precise and flexible control can be realized. The control range of the gain is a summation of the maximum gain control ranges of the three circuits with the configurable gains, so that the gain amplifier is suitable for application of the high dynamic input with strong disturbance or weak signal, and is suitable for a radio frequency chip with multiple frequencies and multiple modes of a single ended broadband radio frequency signal input.
Description
Summary of the invention
The invention belongs to technology for radio frequency field, relate to a kind of single-ended transfer difference amplifying circuit, particularly relate to the configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain, for radio-frequency transmitter, the amplification that it both can realize small-signal exports, can realize the suppression to high reject signal, be controlled by base-band digital processing module chip to the mitigation and amplification of input signal simultaneously.
Summary of the invention
The object of the invention is the above problem formed for solving the traditional radio frequency receiver front end of prior art, a kind of configurable rf broadband gain amplifier is provided, support single-ended signal to be transformed into differential signal simultaneously, can be used for the radio-frequency transmitter of multifrequency and other need to carry out amplifying in the receiver of process to broadband signal.It, except the function of gain amplifier possessing traditional receivers, also has the function of gain controllable, better can reduce hardware and system power expense, improves system signal noise ratio, and optimization system designs.
The present invention changes in above-mentioned two kinds of traditional structures can not amplified broad band signal, single-ended signal input differential signal can not be realized export, need additional single-ended transfer difference device and the too narrow shortcoming of adjustable gain scope, make this radio frequency chip can realize amplifying great dynamic range broadband rf signal, eliminate outer member, decrease circuit overhead and power consumption, the performance of raising system, and the sensitivity etc. of radio-frequency transmitter, equipment power dissipation and volume can also be reduced thus, cost-saving.The configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain of the present invention, is applicable to the radio frequency chip of multiple frequency broad band, and being particularly suitable for needs to reduce external devices, increases the workplace of the dynamic range of input signal.
Above-mentioned purpose of the present invention is realized by technical scheme below:
The configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain, its circuit formation comprises the configurable single-ended transfer difference circuit of gain, the configurable wideband amplification circuit of gain and the configurable buffering drive circuit of gain; The broadband rf signal of the input access radio-frequency front-end output of the configurable single-ended transfer difference circuit of gain, its output connects the input of the configurable wideband amplification circuit of gain, the difference output end of the configurable wideband amplification circuit of gain connects the differential input end of the configurable buffering drive circuit of gain, and the differential signal amplified exports by the difference output end of the configurable buffering drive circuit of gain;
The configurable single-ended transfer difference circuit of described gain, the configurable wideband amplification circuit of gain and the configurable buffering drive circuit of gain have gain control end, the gain control end of each circuit above-mentioned all connects outside gain control signal, outside gain control signal is from digital base band processor chip, by different gain control signal value, control the gain of each circuit above-mentioned.
The described configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain, it is: the described configurable single-ended transfer difference circuit of a gain, a configurable wideband amplification circuit of gain and a configurable buffering drive circuit of gain are integrated in configurable gain module, the composition of configurable gain module comprises single-ended broadband signal input, the broadband signal output of difference and connect the gain control signal end of outside gain control signal; Circuit structure makes peripheral structure device reduce, and better reduces hardware cost, is conducive to improving system signal noise ratio.
The described configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain, it is: the configurable single-ended transfer difference circuit of described gain comprises several single-ended transfer difference amplifying circuits and several output control switch pair; Wherein
Several single-ended transfer difference amplifying circuits described for being connected in parallel, single-ended radio frequency input signal V
iNconnect the input of all single-ended transfer difference amplifying circuits simultaneously; Each single-ended transfer difference amplifying circuit difference output end of several single-ended transfer difference amplifying circuits is connected in parallel formation difference output end of the same name through the control switch of series connection; For realizing several single-ended transfer difference amplifying circuits single ended signal transferred to the differential output signal of gain controllable;
Several output control switch pair described, are connected in series on the difference output end of a single-ended transfer difference amplifying circuit corresponding in several single-ended transfer difference amplifying circuits separately; Several output control switch, to the control of the gain control signal by digital base band processor module chip, control the access number of several single-ended transfer difference amplifying circuits; The number of the single-ended transfer difference amplifying circuit of access determines the yield value of the configurable single-ended transfer difference circuit of gain, in order to realize course gain adjustment.
Described gain configurable single-ended transfer difference circuit is made up of multiple identical single-ended transfer difference amplifying circuit, the output of each single-ended transfer difference amplifying circuit is for selecting link, by the gain amplification module number of control connection input, the gain realizing the configurable single-ended transfer difference circuit of gain controls.
The configurable wideband amplification circuit of described gain is many sizes that can be changed gain by the load changing place in circuit.
The configurable buffering drive circuit of described gain is multi input pipe parallel circuit structure, can pass through gain control switch, and gain control signal changes the size of its gain by changing input pipe number in parallel.The gain stepping of single-ended transfer difference gain configurable rf broadband gain amplifier is more greatly the course gain adjustment in the configurable rf broadband gain amplifier of single-ended transfer difference gain.
The described configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain, it is: the configurable wideband amplification circuit of described gain comprises an input and amplifies differential pair circuit itself and a pair configurable laod network and a configurable negative feedback resistor, and a control switch group realizing configuration; Configurable negative feedback resistor is connected to the source electrode that differential pair tube is amplified in input, and the control end of control switch group connects the outside gain control signal end of base-band digital processing module chip; For realizing configuring the secondary stepping of the configurable wideband amplification circuit gain of gain by the configuration of switch control rule laod network and the configuration of switch control rule negative feedback resistor, and realize the fine gain adjustment to the configurable rf broadband gain amplifier of single-ended transfer difference gain.
The described configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain, it is: described a pair configurable laod network and a configurable negative feedback resistor are Two-stage control switches set circuit structure, wherein:
A pair configurable laod network is separately connected on the drain electrode that differential pair tube is amplified in input, and a pair configurable laod network connects first order control switch group, for realizing the gain stepping configuration of the step pitches such as the first order of the configurable wideband amplification circuit of gain;
A configurable negative feedback resistor connects second level control switch group, for realizing the gain stepping configuration of the step pitches such as the second level of the configurable wideband amplification circuit of gain,
The stride value of the step pitches such as the described second level is 2 times of the stride value of the step pitches such as the first order, for realizing the secondary fine tuning of the configurable rf broadband gain amplifier gain of single-ended transfer difference gain.
By outside gain control signal, input is adjusted to the control of control switch group and amplify the resistance sizes of differential pair laod network and the size of source degeneration resistor, realize the gain stepping configuration of the configurable wideband amplification circuit of gain, the stride value of the gain stepping of the configurable wideband amplification circuit of gain is fixed value, be less than the configurable rf broadband gain amplifier of single-ended transfer difference gain, realize the thin tuning in the configurable rf broadband gain amplifier of single-ended transfer difference gain.
The described configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain, it is: the configurable buffering drive circuit of described gain is the two-way multi input pipe parallel circuit structure of difference, every road circuit composition comprise one fixing export buffering drive circuit and two can control inputs buffering drive circuit, each can input series connection access control switch of control inputs buffering drive circuit; The control end of control switch connects the control signal end of base-band digital processing module chip, for accepting the control signal of base-band digital processing module chip, by controlling the break-make of control switch, realize configuring the stepping of the configurable buffering drive circuit gain of gain, and realize the gain accurate adjustment to the configurable rf broadband gain amplifier of single-ended transfer difference gain; Configurable buffering drive circuit difference output connects external baseband digital signal processing module radio circuit, for driving and isolation next stage radio circuit.
The gain of the configurable buffering drive circuit of gain the number of control inputs buffering drive circuit can change the size of gain by changing, base-band digital processing module chip controls the number of its input pipe by control switch, realize the configurable buffering drive circuit gain configuration of gain, the gain step value of the configurable buffering drive circuit of gain is less than the gain step value of the configurable wideband amplification circuit of gain, realizes the accurate adjustment joint of the configurable rf broadband gain amplifier of single-ended transfer difference gain.
The described configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain, it is: described gain configurable single-ended transfer difference circuit, the configurable wideband amplification circuit of gain and the gain control end of the configurable buffering drive circuit of gain are connected outside gain control signal output respectively, realize undistorted amplification and Gain tuning for controlling above-mentioned three gain configurable circuits to respective input signal; The Gain tuning of above-mentioned each gain configurable circuit, under gain control signal controls, implements step gain adjustment with each self-retaining step pitch; Described gain control signal is from the base-band digital processing module chip of outside.
The described configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain, it is: each independent single-ended transfer difference amplifying circuit of described gain configurable single-ended transfer difference circuit is cascode amplifier structure, the two-way load of each independent single-ended transfer difference amplifying circuit is variable-resistance LR laod network, and the variable resistor of laod network is configurable structure; For regulating amplification quantity, the signal amplitude and the phase place that realize each single-ended transfer difference amplifying circuit two-pass DINSAR output in gain configurable single-ended transfer difference circuit are consistent.
The described configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain, it is: the gain of described single-ended transfer difference gain configurable rf broadband gain amplifier can be configured to the configurable single-ended transfer difference circuit of the gain be sequentially connected in series, the gain stepping configuration combination of the configurable wideband amplification circuit of gain and the configurable buffering drive circuit of gain is formed, its gain control range is the maximum gain control range sum of above-mentioned three gain configurable circuits, its gain control value carries out regulating and controlling by external baseband processing module to the gain control signal that input signal detection generates, for controlling the configurable rf broadband gain amplifier gain of single-ended transfer difference gain stepping accurate adjustment step by step, realizing difference output broadband signal amplitude and meeting setting signal range value, effectively suppressing strong jamming.
The gain of the configurable rf broadband gain amplifier of single-ended transfer difference gain controls to regulate according to the signal of input, specifically, size is outputed signal by external detection unit inspection, if there is strong jamming to input, signal strength signal intensity exceedes set point, at this moment system can require the adjustable gain part of FEEDBACK CONTROL single-ended transfer difference circuit according to configured in one piece, adjustment gain reduces, if weak signal input, signal strength signal intensity is lower than set point, at this moment system can require the adjustable gain part of FEEDBACK CONTROL single-ended transfer difference circuit according to configured in one piece, adjustment gain increases, if the size of input signal meets setting requirement, at this moment according to configured in one piece, system can require that the adjustable gain fractionated gain of FEEDBACK CONTROL single-ended transfer difference circuit does not change.Not only can amplifying signal, when there being high reject signal to input, the gain that base-band digital processing module chip can control above circuit realizes reducing high reject signal, has inhibitory action to high reject signal.
The described configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain, it is characterized in that: described gain configurable single-ended transfer difference circuit, the configurable wideband amplification circuit of gain and the configurable buffering drive circuit of gain are the circuit of wideband structural, described wideband structural comprises source degeneration structure and inductance resonance structure, realized improving signal bandwidth, for the undistorted amplification to input broadband signal by device architecture and employing 0.18 μm of CMOS integrated technique.
Because present market requires more and more higher to the bandwidth sum input range of input signal, stable output voltage to be had simultaneously, in order to reduce circuit complexity, improve the stability of a system, introduce the configurable single-ended transfer difference circuit of gain, the configurable wideband amplification circuit of gain, meeting under broadband signal input prerequisite, greatly improves the dynamic range of system.Use the signal that base-band digital processing module chip detection exports, make full use of the disposal ability that its DSP is powerful, complete more complicated nonlinear algorithm, gain is made to control not by the impact of temperature, technique, noise etc., make control more flexible by programming, characteristic required for easy realization, realizes more accurate gain and controls.The configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain of the present invention, transfer single-ended wideband input signal to broadband differential signals, during access, noise factor is very low simultaneously, and according to the size of base-band digital processing module chip signal output, coordinate and change gain configuration mode, by the large step pitch of gain, middle step pitch, the combination stepping of half step distance, realize the thick of gain, carefully, accurate adjustment saves, obtain the controlled adjustment of great dynamic range, the input signal making dynamic range extremely wide can be stable output signal, reach and amplify weak signal and the effect suppressing strong signal and high reject signal.
Present market is to miniaturized at chip, integrated level proposes more and more higher requirement, the integration module of the configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain of the present invention, the requirement of the miniaturized high integration of chip can be adapted to, save a large amount of area, the peripheral components of system is reached minimize, at utmost decrease system cost.
Substantial effect of the present invention:
1, the configurable rf broadband gain amplifier of single-ended transfer difference gain of the present invention, is applicable to the dynamic input requirements of height being applied to strong jamming or weak signal.
2, the present invention has function single-ended signal being transferred to differential signal, and circuit structure makes peripheral structure device reduce, and better can reduce hardware and system cost expense, is conducive to optimizing improving system signal noise ratio.
3, the configurable buffering drive circuit driving force of gain that adds of circuit of the present invention is strong, can meet the driving requirement of late-class circuit very well.
4, the gain digital control model of single-ended transfer difference gain of the present invention configurable rf broadband gain amplifier has benefited from the powerful detection of external baseband digital signal processing module chip and disposal ability, gain is made to control, not by the impact of temperature, technique, noise etc., can realize more accurately controlling more flexibly.
5, the configurable rf broadband gain amplifier of single-ended transfer difference gain of the present invention can adapt to broadband signal input, can be applied to multiple radio frequency input occasion, is especially applicable to coordinating needs to receive the multifrequency receiver of different-waveband simultaneously.
Background technology
In recent years along with the continuous appearance of areas of information technology new technology and the continuous progress of technique, radio-frequency front-end and the base-band digital processing module chip of various receiver system all achieve larger development.There is the day by day ripe of the chip research and development of fixing little gain or large gain, but because of its function singleness, so attentiveness is turned to the research and development with dynamically high and high bandwidth chip by people, comprise the multifunction chip supporting multiple working frequency range and the research and development supporting the multifunction chip suppressing interference signal, the demand that technology for radio frequency field is more and more higher can be met.
As everyone knows, signal in different communication systems uses not identical signal in band, and the rf gain amplifier of the radio-frequency front-end of existing traditional receiver system is generally narrow-band reception pattern, can only receive the signal of wherein a kind of signal in band.Meanwhile, be all single ended input for present most of communication system radiofrequency signal, and chip internal all needing signal to be differential signal to suppress common-mode signal, needing to add extra single-ended transfer difference balun circuit outward at sheet so general.Meanwhile, existing interference is between different communication systems general very serious, and general communication chip all can not process interference signal very well.Based on above analysis, the defect of existing radio-frequency (RF) receiving circuit has seriously limited its application, and adds many extra peripheral circuits.
There is shortcomings in prior art rf gain amplifier: the first, and the radio frequency amplifier of traditional structure is all fixed gain, is not suitable for the dynamic input requirements of height being applied to strong jamming or weak signal.The second, the radio frequency amplifier of traditional structure is all work in narrowband environment, can not meet the occasion that different-waveband signal inputs simultaneously.3rd, the radio frequency amplifier of traditional structure all can not change single-ended signal into difference channel, chip exterior is needed additionally to increase the single-ended Ba Lun parts transferring differential signal to, so both add the cost of overall plan, also add the chip pin of input and output simultaneously, reduce the stability of signal, add the difficulty of global design.4th, there is limitation defect in output buffer driving force.
If there is a kind of configurable rf broadband gain amplifier can support single-ended transfer difference function, and can as required by its gain size of base-band digital processing module chip controls, to coordinate the application of different input size or strong jamming input, the flexibility of whole radio-frequency front-end is not only made greatly to improve, and the ever-increasing market demand of better adaptation areas of information technology new technology.
Accompanying drawing explanation
Fig. 1 is the configurable radio-frequency amplifier circuit theory diagram of gain of prior art;
In figure: 101-determines gain amplifier.
Fig. 2 is the configurable buffer circuit theory diagram of gain of prior art;
In figure: the output buffer that 201-is fixing, the output buffer of 202-switch control rule access.
Fig. 3 a is that the configurable rf broadband gain amplifier of single-ended transfer difference gain of the present invention forms block diagram;
In Fig. 3 a: the configurable single-ended transfer difference circuit of 31-, the configurable wideband amplification circuit of 32-gain, the configurable buffering drive circuit of 33-gain, V
iN-single ended signal, V
oUTPand V
oUTN-differential output signal, V
ctl-gain control signal.
Fig. 3 b is the single-ended transfer difference gain configurable rf broadband gain amplifier circuit structured flowchart of Fig. 3 a embodiment of the present invention;
In Fig. 3 b: 311 ~ 314-single-ended transfer difference amplifying circuit, 1 ~ single-ended transfer difference amplifying circuit n, the gain control switch of the configurable single-ended transfer difference circuit of 315 ~ 318-gain.
Fig. 4 is the configurable rf broadband gain amplifier of single-ended transfer difference gain of the embodiment of the present invention and the connection block diagram of outside digital base band processor module chip;
In Fig. 4: the configurable rf broadband gain amplifier of 41-single-ended transfer difference gain, 42-digital base band processor module.
Fig. 5 is the single-ended transfer difference amplifying circuit schematic diagram of the configurable single-ended transfer difference circuit of gain of the embodiment of the present invention;
In Fig. 5: M1, M2-input amplifier tube, M3, M4-tail current pipe, R1, R2-biasing resistor, R3, R4-variable load resistance, C1, C2-capacitance, L1, L2-load inductance, Bias1, Bias2-offset signal.
Fig. 6 is the gain configurable wideband amplification circuit principle of compositionality figure adopting the embodiment of the present invention;
In Fig. 6: the configurable wideband amplification circuit of 6-gain; M5, M6-are respectively the positive negative output amplifier tube of input signal, M7, M8-is respectively M5, the tail current pipe of M6, R5, R6-is respectively M5, the biasing resistor of M6, R7, R8-is respectively M5, the variable load resistance of M6 pipe, R9-source negative feedback variable resistor, C3, C4-are respectively M5, the capacitance of M6, L3, L4-load inductance.
Fig. 7 is the configurable buffering drive circuit figure of gain that the embodiment of the present invention adopts;
In Fig. 7: the configurable buffering drive circuit of 7-gain; The configurable buffering drive circuit of 71-P road gain, the configurable buffering drive circuit of 72-N road gain; M7-fixes the amplifier transistor of output buffer, M8 and M9-controls the amplifier transistor of access output buffer, and M10-tail current pipe, R10, R11 and R12-biasing resistor, SW1, SW2-control switch, C5-inputs capacitance.
The single-ended transfer difference gain configurable rf broadband gain amplifier circuit schematic diagram of Fig. 8 to be a gain control dynamic range of the embodiment of the present invention be 63dB;
In Fig. 8: the configurable rf broadband gain amplifier of 8-single-ended transfer difference gain; The configurable single-ended transfer difference circuit of 81-gain; 811-single-ended transfer difference circuit 1,812-single-ended transfer difference circuit 2,813-single-ended transfer difference circuit 3,814-single-ended transfer difference circuit 4; 815-818-control switch pair; The configurable wideband amplification circuit of 6-gain; The configurable buffering drive circuit of 7-gain; The configurable buffering drive circuit of 71-P road gain, the configurable buffering drive circuit of 72-N road gain
The configurable radio frequency amplifier of gain of prior art as shown in Figure 1.11 is fixed gain amplifier, RF1 and RF2 is the plurality of access modes of the multiple combination of the resistance of resistance value changeable terminals, interrupteur SW 1, SW2, SW3 and SW4 folding, controlling resistance R11 ~ R16, and the gain realizing radio frequency amplifier is configurable.
Fig. 2 is the configurable buffer circuit of gain of prior art.201 is fixing output buffer, 202 is switch control rule access output buffer, M1 and M2 is respectively the fixing amplifier transistor exporting and control access output buffer, interrupteur SW 1 controls access output buffer, switch control rule access output buffer 202 is one-level, and output buffer driving force exists limitation defect.
The schematic block circuit diagram of the configurable radio frequency amplifier of traditional gain as shown in Figure 1, the configurable radio frequency amplifier of gain is made up of resistance adjustable network and adjustable gain radio frequency amplifier, first input signal is being exported through adjustable amplification radio frequency amplifier by resistor network, resistance adjustable network can obtain different resistance values by configuration, different resistance values can make the input signal passed through obtain the decay of different gains, or select direct unattenuated pass-through mode, amplified through the radio frequency amplifier of adjustable gain again by the signal of resistance adjustable network, adjustable gain radio frequency amplifier can change the yield value of radio frequency amplifier by the value changing feedback resistance RF1 and RF2.
The configurable drive circuit of traditional gain as shown in Figure 2, radiofrequency signal is exported by grade follower of penetrating be made up of transistor M1 and current source Is1, whether interrupteur SW 1 selects M2 to work, when SW1 selects M2, M2 normally works, grade follower of penetrating that input signal forms via transistor M2 and current source Is2 joins in output, and the gain realizing drive circuit changes.
Embodiment
Below by embodiment also by reference to the accompanying drawings, technical scheme of the present invention is further described in detail.
First embodiment
The circuit that Fig. 3 gives the configurable rf broadband gain amplifier of single-ended transfer difference gain of the embodiment of the present invention forms block diagram.Composition graphs 3 illustrates that in the present invention, the configurable structure of gain realizes forming: input signal V
iNenter the single ended inputs of the configurable single-ended transfer difference circuit 31 of gain, the configurable single-ended transfer difference circuit 31 of gain is connected in parallel by single-ended transfer difference amplifying circuit 311 ~ 314, single-ended transfer difference amplifying circuit 311 ~ 314 realizes transferring input signal to differential signal by single-ended jointly, switch 315 ~ 418 controls variable gain stages 311 ~ 314 and accesses, differential output signal through control switch to 35 ~ 318, the input of the configurable wideband amplification circuit 32 of insertion gain, the output of the configurable wideband amplification circuit of gain is again by the configurable buffering drive circuit 33 of gain, late-class circuit is exported to by the configurable buffering drive circuit of gain.
Second embodiment
The configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain that Fig. 4 gives Application Example of the present invention is connected block diagram with the circuit of base-band digital processing module chip controls signal.Baseband chip provides three groups of control words to control the configurable rf broadband gain amplifier circuit of single-ended transfer difference gain, be respectively Vctl1, Vctl2 and Vctl3, Vctl1 ride gain can control single-ended transfer difference circuit 31, the configurable buffering drive circuit 33 of Vctl2 ride gain configurable wideband circuit 32, Vctl3 ride gain.
The differential output signal of the configurable rf broadband gain amplifier 41 of single-ended transfer difference gain, difference output end via the configurable buffering drive circuit 33 of gain delivers to outside base-band digital processing module 42, and base-band digital processing module detects the size of the differential output signal of the configurable buffering drive circuit 33 of gain.When base-band digital processing module chip detection is less than setting signal value to the signal value sent here, first transmit control signal Vctl1, the configurable buffering drive circuit of ride gain 33 increases the yield value of the configurable buffering drive circuit 33 of gain with step value 0.5dB, after the gain of adjustment gain configurable single-ended transfer difference rf broadband gain amplifier 41, base-band digital processing module chip continues to detect input differential output signal value, if be still less than setting signal value, the configurable buffering drive circuit 33 of ride gain increases yield value with step value 0.5dB again, until input differential output signal value equals setting signal value, stop transmitting control signal to the configurable buffering drive circuit 33 of gain, adjustment process stops.If base-band digital processing module chip detection to final output signal value be still still less than setting signal value, then base-band digital processing module chip sends gain control signal control signal Vctl2 to the configurable wideband amplification circuit 32 of gain, change the resistance of its load resistance R7 and R8, the output gain of the configurable wideband amplification circuit 32 of gain is increased with 2dB step value, in like manner, if until adjustment after base-band digital processing module chip detection to input signal size equal setting signal value, adjustment process stop.If base-band digital processing module chip detection to its input signal values be still less than setting signal value, then base-band digital processing module chip continues the Vctl2 that transmits control signal, change the resistance of the source degeneration resistor R9 of the configurable wideband amplification circuit 32 of gain, gain will increase with 4dB step value, if adjustment after base-band digital processing module chip detection to final output signal size equal setting signal value, adjustment process stop.If base-band digital processing module chip detection to final output signal value be still less than setting signal value, then base-band digital processing module chip sends gain control signal Vctl3, deliver to the configurable single-ended transfer difference circuit of gain, change the load resistance of each single-ended transfer difference amplifying circuit, gain is increased with the step value of 8dB, in like manner, if until adjustment after base-band digital processing module chip detection to final output signal value equal setting signal value, adjustment process stop.If base-band digital processing module chip detection to final output signal size be still less than set point, then base-band digital processing module chip continues to send gain control signal Vctl3, make the connection of a control switch in control switch 416 ~ 418, progressively control the number that the access of single-ended transfer difference amplifying circuit exports, the configurable single-ended transfer difference circuit 31 of gain is made to increase gain with 16dB step value, until gain configuration reaches optimum value.
If base-band digital processing module chip detection to rf broadband gain amplifier 41 output signal value or claim total output signal value to be greater than setting signal value, so, base-band digital processing module chip continues the gain control signal sending Reverse Turning Control, successively decrease according to gain the Gain tuning of the configurable rf broadband gain amplifier 41 of stride value descending Reverse Turning Control one by one single-ended transfer difference gain, until the output signal value of the configurable rf broadband gain amplifier 41 of single-ended transfer difference gain is optimum value, the permission gain deviation of optimum value and setting signal value is 0.5dB.
The gain adjustment range of the configurable rf broadband gain amplifier 41 of single-ended transfer difference gain, namely the maximum dynamic range that gain controls is that (accurate adjustment step pitch a)+(fine tuning step pitch b+ fine tuning step pitch c)+(coarse adjustment step pitch d+ coarse adjustment step pitch e)=(0.5a)+(2.0b+4.0c)+(8.0d+16e) dB, a, b, c, d, e is design load.In formula: a is the number of configurable buffering drive circuit, b is the variable resistance number of times of the configurable wideband amplification circuit load resistance of gain, c is the variable resistance number of times of the configurable wideband amplification circuit negative feedback resistor of gain, d is the variable resistance number of times of single-ended transfer difference amplifying circuit load resistance, and e is the number of single-ended transfer difference amplifying circuit.
3rd embodiment
Fig. 5 ~ 7 provide the configurable single-ended transfer difference amplifying circuit of gain of the embodiment of the present invention, the schematic diagram of the configurable wideband amplification circuit of gain and the configurable buffering drive circuit of gain.
Provide single-ended transfer difference amplifying circuit schematic diagram in the configurable single-ended transfer difference circuit of gain in Fig. 5, single-ended transfer difference amplifying circuit is the adjustable cascode amplifier structure of amplification quantity, input signal V
iNinput amplifier tube M1, M2 is input to respectively by capacitance C1, C2, input amplifier tube M1 with M2 is with the amplitude of identical amplification quantity amplification input signal, and with the phase place of contrary phase adjusted input signal, at L1 and the R3 shunt load of input amplifier tube M1, M2, the difference output end V of L2 and R4 shunt load
oUTNand V
oUTP, the differential amplification output signal that the amplitude that obtains is identical, phase place is contrary.The amplification quantity of single-ended transfer difference amplifying circuit is adjustable, can be realized the adjustment of differential signal output amplitude size by the size changing variable load resistance R3 and R4.The difference output end of each single-ended transfer difference amplifying circuit connects a control switch pair, control switch is to the control by gain control signal, control switch is to time closed, the controlled access of difference output end of this single-ended transfer difference amplifying circuit, the gain for the configurable single-ended transfer difference circuit of gain realizes stepping to be increased.Offset signal Vbias1 and Vbias2 is respectively from the voltage that bias voltage circuit produces.
Give gain configurable wideband amplification circuit structure in Fig. 6, input signal V
iNn2, V
iNp2 is input to input amplifier tube M5, M6 respectively by capacitance C3, C4, transistor M5 and M6 with formed objects amplification input signal, at the output V of shunt load L3 and R7, shunt load L4 and R8
oUTn2 and V
oUTthe differential signal that P2 is amplified.The size changing load resistance R7 and R8 or source degeneration resistor R9 can change differential signal output amplitude size.By the control of the gain control signal Vctl2 that base-band digital processing module chip sends, the variable resistor R7 of the shunt load of two-stage input amplifier M5 can be controlled, the variable resistor R8 value of the shunt load of M6, first with the yield value of the configurable wideband amplification circuit of gain step distance adjustment gain of 2.0dB, each output gain increases 2.0dB, can repeatedly fine control, it is 2.0 ~ 6.0dB that output gain increases adjusting range, then, by the control of the gain control signal Vctl2 that base-band digital processing module chip sends, the size of adjustment source degeneration resistor R9, thus participate in realizing the configurable fine tuning of gain to differential gain configurable rf broadband gain amplifier.The configurable wideband amplification circuit of gain adopts large resistance R5, R6 and the load of inductance L 3, L4 Parallel opertation, utilizes resistance to increase the resonant bandwidth produced by inductance spike, improves the resonance frequency of signal, obtains bandwidth amplification performance.Gain is configurable is first by changing load resistance R5 and R6, providing stepping to be the gain-adjusted ability of 2dB, by changing source degeneration resistance R9, can change gain afterwards, provides stepping to be the gain-adjusted ability of 4dB.
Fig. 7 gives the configurable buffering drive circuit schematic diagram of gain of single channel, the circuit structure of the configurable buffering drive circuit of P road gain 71 comprises the buffering drive circuit 711 of one-level fixed gain and the buffering drive circuit 712 and 713, input signal V of the controlled access of two-stage
iNp3 is linked into input amplifier tube M7, M8 by capacitance C5, M9, input amplifier tube M7, M8, the operating current of M9 is provided by tail current pipe M10, input amplifier tube M7, the output of M8 and M9 is connected in parallel, and forms one, P road output signal end and namely turns differential gain configurable rf broadband gain amplifier output signal end V
oUTp3.The controlled access of two-stage buffering drive circuit 712 with 713 signal input part be respectively connected control switch SW1 and SW2, the control of the gain control signal Vctl3 that interrupteur SW 1 and SW2 send by base-band digital processing module chip, the access of the buffering drive circuit 712 and 713 of the controlled access of two-stage can be controlled, with the step gain of 0.5dB apart from the yield value changing the configurable buffering drive circuit of gain, access first-level buffer drive circuit, output gain increases 0.5dB, access two-stage buffering drive circuit, output gain increases 1.0dB, its adjusting range is 0 ~ 1.0dB, thus participate in realizing the configurable intense adjustment of gain to differential gain configurable rf broadband gain amplifier.The circuit structure of the configurable buffering drive circuit of N road gain 72 is identical with P road, and the input signal end on N road is V
iNnamely the output signal end on N3, N road turns differential gain configurable rf broadband gain amplifier output signal end V
oUTn3.P road is identical with the amplitude output signal on N road, and phase place is contrary.Configurable buffering drive circuit exports and connects outside next stage radio circuit, drives and isolation next stage radio circuit.
The gain of the configurable buffering drive circuit of gain the number of control inputs buffering drive circuit can change the size of gain by changing, base-band digital processing module chip controls the number of its input pipe by control switch, realize the configurable buffering drive circuit gain configuration of gain, the gain stepping of the configurable buffering drive circuit of gain is less than the configurable wideband amplification circuit of gain, realizes the thin tuning in the configurable rf broadband gain amplifier of single-ended transfer difference gain.
4th embodiment
The circuit theory diagrams of Fig. 8 to be a gain control dynamic range be configurable rf broadband gain amplifier of single-ended transfer difference gain of 63dB.Single-ended transfer difference gain configurable rf broadband gain amplifier 8 is made up of gain configurable single-ended transfer difference circuit 81, the configurable wideband amplification circuit of gain 6 and the configurable buffering drive circuit 7 of gain.The present embodiment sets: a is 2, b is 1, c is 1, d is 1, e is 3, namely the configurable buffering drive circuit of gain 7 comprises the configurable buffering drive circuit of P road gain 71 and the configurable buffering drive circuit 72 of N road gain, P road is identical with the configurable buffering drive circuit of the gain on N road, and the number a that every road all comprises a fixing buffering drive circuit and configurable buffering drive circuit is 2.The load resistance of the configurable wideband amplification circuit 6 of gain can variable resistance number of times b be 1, the variable resistance number of times c of the negative feedback resistor of the configurable wideband amplification circuit 6 of gain is 1.Gain configurable single-ended transfer difference circuit 81 comprises 4 identical single-ended transfer difference amplifying circuits 811 ~ 814, and its variable resistance number of times d is 1.Two difference output ends of single-ended transfer difference amplifying circuit 811 ~ 814 are connected in series a control switch to 815 ~ 818.Single-ended transfer difference amplifying circuit 811 is fixed gain single-ended transfer difference circuit, and its control switch is normally closed to 815, and 812 ~ 814 is 3 configurable single-ended transfer difference amplifying circuits of gain, and the number e of the configurable single-ended transfer difference amplifying circuit of gain is 3.The two-way difference output end in parallel of 4 single-ended transfer difference amplifying circuits 811 ~ 814 connects the two-pass DINSAR input of the configurable wideband amplification circuit 6 of gain, the two-pass DINSAR output of the configurable wideband amplification circuit of gain 6 connects the configurable buffering drive circuit of P road gain 71 of the configurable buffering drive circuit of gain and the input of the configurable buffering drive circuit 72 of N road gain, the output V of the configurable buffering drive circuit 71 of P road gain
oUTthe output V of the configurable buffering drive circuit 72 of P and N road gain
oUTn connects the signal input part of external baseband signal processing module 42 separately.The signal amplitude of its signal input part delivered to by the configurable rf broadband gain amplifier 8 of external baseband signal processing module 42 detection of dynamic single-ended transfer difference gain, make comparisons with the signal amplitude value of setting, and make NONLINEAR CALCULATION, dynamic generation three road gain control signal Vctl1, Vctl2, Vctl3, to be distributed to the configurable buffering drive circuit of gain 7 of single-ended transfer difference gain configurable rf broadband gain amplifier 8, the configurable wideband amplification circuit of gain 6 and the configurable single-ended transfer difference circuit 81 of gain in control word mode by the gain control signal of three railway digitals.
Single-ended transfer difference gain configurable rf broadband gain amplifier 8 gain control dynamic range is 0.5 ~ 63dB, and gain control braking state Adjustment precision is 0.5dB.
Base-band digital processing module is by sending the gain control signal of control word, control the configurable single-ended transfer difference circuit of gain of single-ended transfer difference gain configurable rf broadband gain amplifier, the gain control dynamic range of the configurable wideband amplification circuit of gain and the configurable buffering drive circuit of gain is total up to 63dB, makes dynamically input signal greatly can obtain stable optimum output signals.
It will be understood by those skilled in the art that under the prerequisite not deviating from broad scope of the present invention, some changes are made to above-described embodiment.Thus, the present invention is not limited in disclosed specific embodiment.Its scope should contain appended claims limit core of the present invention and protection range in all changes.
Claims (7)
1. the configurable rf broadband gain amplifier of single-ended transfer difference gain, its circuit formation comprises the configurable single-ended transfer difference circuit of the gain of connecting successively, the configurable wideband amplification circuit of gain and the configurable buffering drive circuit of gain;
Described gain configurable single-ended transfer difference circuit, the configurable wideband amplification circuit of gain and the gain control end of the configurable buffering drive circuit of gain are connected outside gain control signal output respectively, realize undistorted amplification and Gain tuning for controlling above-mentioned three gain configurable circuits to respective input signal; The Gain tuning of above-mentioned each gain configurable circuit is under gain control signal controls, step gain adjustment is implemented with each self-retaining step pitch, it is 0.5 ~ 63 dB that the configurable rf broadband gain amplifier gain of single-ended transfer difference gain controls dynamic range, and gain control braking state Adjustment precision is 0.5 dB; The gain stepping of the configurable buffering drive circuit of gain is less than the configurable wideband amplification circuit of gain, realizes the thin tuning in the configurable rf broadband gain amplifier of single-ended transfer difference gain; The configurable buffering drive circuit driving force of the gain added is strong, can meet the driving requirement of late-class circuit very well; Described gain control signal is from the digital base band processor module chip of outside;
The broadband rf signal of the input access radio-frequency front-end output of the configurable single-ended transfer difference circuit of gain, its output connects the input of the configurable wideband amplification circuit of gain, the difference output end of the configurable wideband amplification circuit of gain connects the differential input end of the configurable buffering drive circuit of gain, and the differential signal amplified exports by the difference output end of the configurable buffering drive circuit of gain;
The configurable single-ended transfer difference circuit of described gain, the configurable wideband amplification circuit of gain and the configurable buffering drive circuit of gain have gain control end, the gain control end of each circuit above-mentioned all connects outside gain control signal, outside gain control signal is from digital base band processor module chip, by different gain control signal value, control the gain of each circuit above-mentioned.
2. the configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain according to claim 1, is characterized in that: the configurable single-ended transfer difference circuit of described gain comprises several single-ended transfer difference amplifying circuits and several output control switch pair; Wherein
Several single-ended transfer difference amplifying circuits described are for being connected in parallel, and single-ended radio frequency input signal VIN connects the input of all single-ended transfer difference amplifying circuits simultaneously; Each single-ended transfer difference amplifying circuit difference output end of several single-ended transfer difference amplifying circuits is connected in parallel formation difference output end of the same name through the control switch of series connection; For realizing several single-ended transfer difference amplifying circuits single ended signal transferred to the differential output signal of gain controllable;
Several output control switch pair described, are connected in series on the difference output end of a single-ended transfer difference amplifying circuit corresponding in several single-ended transfer difference amplifying circuits separately; Several output control switch, to the control of the gain control signal by digital base band processor module chip, control the access number of several single-ended transfer difference amplifying circuits; The number of the single-ended transfer difference amplifying circuit of access determines the yield value of the configurable single-ended transfer difference circuit of gain, in order to realize course gain adjustment.
3. the configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain according to claim 1, it is characterized in that: the configurable wideband amplification circuit of described gain comprises an input and amplifies differential pair tube and a pair configurable laod network and a configurable negative feedback resistor, and a control switch group realizing configuration; Configurable negative feedback resistor is connected to the source electrode that differential pair tube is amplified in input, and the control end of control switch group connects the outside gain control signal end of digital baseband processing module chip; For realizing configuring the secondary stepping of the configurable wideband amplification circuit gain of gain by the configuration of switch control rule laod network and the configuration of switch control rule negative feedback resistor, and realize the fine gain adjustment to the configurable rf broadband gain amplifier of single-ended transfer difference gain.
4. the configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain according to claim 3, is characterized in that: described a pair configurable laod network and a configurable negative feedback resistor are Two-stage control switches set circuit structure, wherein:
A pair configurable laod network is separately connected on the drain electrode that differential pair tube is amplified in input, and a pair configurable laod network connects first order control switch group, for realizing the gain stepping configuration of the step pitches such as the first order of the configurable wideband amplification circuit of gain;
A configurable negative feedback resistor connects second level control switch group, for realizing the gain stepping configuration of the step pitches such as the second level of the configurable wideband amplification circuit of gain,
The stride value of the step pitches such as the described second level is 2 times of the stride value of the step pitches such as the first order, for realizing the secondary fine tuning of the configurable rf broadband gain amplifier gain of single-ended transfer difference gain.
5. the configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain according to claim 1, it is characterized in that: the configurable buffering drive circuit of described gain is the two-way multi input pipe parallel circuit structure of difference, every road circuit composition comprise one fixing export buffering drive circuit and two can control inputs buffering drive circuit, each can input series connection access control switch of control inputs buffering drive circuit; The control end of control switch connects the control signal end of digital baseband processing module chip, for receiving the control signal of digital base band processor module chip, by controlling the break-make of control switch, realize configuring the stepping of the configurable buffering drive circuit gain of gain, and realize the gain accurate adjustment to the configurable rf broadband gain amplifier of single-ended transfer difference gain; Configurable buffering drive circuit difference output connects external digital baseband processing module chip radio frequency circuit, for driving and isolation next stage radio circuit.
6. the configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain according to claim 1, it is characterized in that: multiple single-ended transfer difference amplifying circuits of described gain configurable single-ended transfer difference circuit are for being connected in parallel, each single-ended transfer difference amplifying circuit is cascode amplifier structure, the two-way load of each single-ended transfer difference amplifying circuit is LR laod network, and the variable resistor of laod network is configurable structure; For regulating amplification quantity, the signal amplitude realizing each single-ended transfer difference amplifying circuit two-pass DINSAR output in gain configurable single-ended transfer difference circuit is identical, and phase place is contrary.
7. according to the configurable rf broadband gain amplifier of a kind of single-ended transfer difference gain one of claim 1-6 Suo Shu, it is characterized in that: the gain control value of the configurable rf broadband gain amplifier of described single-ended transfer difference gain carries out regulating and controlling by external digital baseband processing module chip to the gain control signal that input signal detection generates; According to the size of digital base band processor module chip output signal, coordinate and change gain configuration mode, by the combination stepping of the large step pitch of gain, middle step pitch, half step distance, realize thick, thin, the accurate adjustment joint of gain.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| GB2509777B (en) * | 2013-01-15 | 2016-03-16 | Broadcom Corp | An apparatus for a radio frequency integrated circuit |
| CN104104340B (en) * | 2013-04-03 | 2018-05-29 | 安凯(广州)微电子技术有限公司 | A kind of radio-frequency power amplifier |
| CN105684303A (en) * | 2013-08-29 | 2016-06-15 | 爱立信(中国)通信有限公司 | Driver circuit and associated power amplifier assembly, radio base station and method |
| CN105991196B (en) * | 2015-02-17 | 2019-04-19 | 华为技术有限公司 | A kind of data precoding device, system and coding method |
| US9843291B2 (en) * | 2015-08-07 | 2017-12-12 | Qualcomm Incorporated | Cascaded switch between pluralities of LNAS |
| US10922605B2 (en) * | 2015-10-23 | 2021-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| CN106817177A (en) * | 2015-11-30 | 2017-06-09 | 华大半导体有限公司 | A kind of inexpensive sensibility testing arrangement |
| TWI600995B (en) * | 2016-03-18 | 2017-10-01 | 財團法人工業技術研究院 | Voltage clamping circuit |
| CN105939149A (en) * | 2016-04-16 | 2016-09-14 | 合肥博雷电气有限公司 | Tunable microwave power amplifier device |
| CN105939150A (en) * | 2016-04-16 | 2016-09-14 | 合肥博雷电气有限公司 | Linear microwave power amplifier |
| CN106680690B (en) * | 2016-11-17 | 2020-02-07 | 上海精密计量测试研究所 | Clock driving method for single-ended input and differential output applied to ATE (automatic test equipment) test |
| CN111543007A (en) * | 2018-04-13 | 2020-08-14 | 华为技术有限公司 | Signal attenuation network and wireless signal receiver |
| CN110166005B (en) * | 2019-06-12 | 2021-10-08 | 中国科学院武汉物理与数学研究所 | A symmetrical low-noise isolation distribution amplifier circuit |
| CN114257188A (en) * | 2021-12-23 | 2022-03-29 | 深圳市乾鸿微电子有限公司 | Wide-range gain-adjustable trans-impedance amplifier |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101867382A (en) * | 2010-07-07 | 2010-10-20 | 复旦大学 | All-digital under-sampling pulsed UWB receiver |
| CN101902242A (en) * | 2010-07-14 | 2010-12-01 | 复旦大学 | RF front-end circuit with single-ended input and differential output applied to ultra-wideband systems |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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-
2011
- 2011-06-16 CN CN201110176707.4A patent/CN102790595B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101867382A (en) * | 2010-07-07 | 2010-10-20 | 复旦大学 | All-digital under-sampling pulsed UWB receiver |
| CN101902242A (en) * | 2010-07-14 | 2010-12-01 | 复旦大学 | RF front-end circuit with single-ended input and differential output applied to ultra-wideband systems |
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