CN102790150A - Manufacturing method for nanometer bowl-shaped sapphire pattern substrate - Google Patents
Manufacturing method for nanometer bowl-shaped sapphire pattern substrate Download PDFInfo
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- CN102790150A CN102790150A CN2012102817412A CN201210281741A CN102790150A CN 102790150 A CN102790150 A CN 102790150A CN 2012102817412 A CN2012102817412 A CN 2012102817412A CN 201210281741 A CN201210281741 A CN 201210281741A CN 102790150 A CN102790150 A CN 102790150A
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Abstract
The invention provides a manufacturing method for a nanometer bowl-shaped sapphire pattern substrate and relates to the technical field of semiconductor production. The manufacturing method comprises the following steps: evaporating a cesium chloride film on the surface of a sapphire substrate; causing the cesium chloride film on the surface of the sapphire substrate to absorb water and swell, thereby forming a cesium chloride nanometer island; depositing a silicon dioxide film on the outer surface of the cesium chloride nanometer island; preparing a silicon dioxide nanometer bowl layer; taking the silicon dioxide nanometer bowl layer as an etching mask for performing ICP (Inductively Coupled Plasma) etching, and connecting each bowl-shaped silicon dioxide nanometer layer of the silicon dioxide nanometer bowl layer to the sapphire substrate; and ultrasonically treating or soaking in a BOE solution, completely removing the silicon dioxide nanometer bowl layer from the surface of the sapphire substrate and exposing a nanometer bowl-shaped sapphire patterned surface. The product formed according to the manufacturing method provided by the invention can reduce the dislocation density in a nitride epitaxial layer and can increase the crystal quality and light intensity of an epitaxial material.
Description
Technical field
The present invention relates to the semiconductor fabrication techniques field.
Background technology
As everyone knows; Adopt the graphic sapphire substrate technology can reduce the stress that Sapphire Substrate and nitride epitaxial layer cause owing to lattice mismatch; Reduce the dislocation density in the GaN material; Improve the internal quantum efficiency of LED device, increase the escape exit probability of light simultaneously greatly, improve light extraction efficiency.
The method for preparing the sapphire graphical substrate at present commonly used is: earlier at Sapphire Substrate surface-coated photoresist, photoetching development goes out the figure of micron dimension, and (2～5um), it is circular that graphics shape is generally, and the spacing between the figure is 1-3 μ m.With the photoresist is mask, adopts the method etching sapphire surface of wet etching or dry etching, obtains the graphic sapphire substrate.Dimension of picture in the method is that micron dimension, figure are bigger, and figure is convex, and is limited with the defect concentration effect that reduces material for the release action of material stress.
Summary of the invention
The present invention seeks to a kind of manufacture method of the bowl-shape sapphire graphical substrate of nanometer of the escape exit probability that improves light.
The present invention includes following production stage:
1) on evaporator, vapor deposition thickness is the cesium chloride film of 100～800 nanometers on the Sapphire Substrate surface;
2) in the evaporator chamber, charge into steam, 5～30 minutes time, the cesium chloride film absorption moisture on Sapphire Substrate surface is grown up form cesium chloride nanometer island, making the duty ratio in the gap between each nanometer island and the adjacent nanometer island is 1:1;
3) be the silica membrane of 0.5～1um at the outer surface employing PECVD (plasma enhanced chemical vapor deposition) on cesium chloride nanometer island method deposit thickness;
4) with deionized water ultrasonic 5～15 minutes, the cesium chloride nanometer island of removing sapphire surface formed silica nanometer bowl layer, and this silica nanometer bowl layer continuous a plurality of back side of serving as reasons are formed towards the bowl-type silica nano material of Sapphire Substrate respectively;
5) with silica nanometer bowl layer as etch mask, sapphire surface is carried out ICP (inductively coupled plasma) etching, each bowl-type silica nanometer layer of silica nanometer bowl layer is connected on the Sapphire Substrate;
6) ultrasonic or immersion in BOE solution is removed the silica nanometer bowl layer on Sapphire Substrate surface totally, exposes the bowl-shape patterned sapphire surface of nanometer.
The present invention is to provide a kind of dimension of picture is that nanometer scale, graphics shape are the bowl-shape sapphire graphical substrate of nanometer, can reduce the dislocation density in the nitride epitaxial layer, improves the crystal mass and the luminous intensity of epitaxial material.
XRD (X ray double crystal diffraction) characteristic of the basic LED material of GaN on the micron graph substrate that the GaN base LED material on the sapphire graphical substrate of processing with the present invention and conventional method are processed contrasts; GaN base LED material on the substrate of the present invention is less at the halfwidth of (0002) direction X-ray diffraction test, luminous intensity increases, and reflects that quality of materials is better.It is thus clear that the LED device of processing with sapphire graphical substrate of the present invention can increase the escape exit probability of light greatly, improve light extraction efficiency.
In addition, the vapor deposition time of step 1) according to the invention is 5～40min.
Said step 2) diameter on each nanometer island is respectively 100～900nm, and the gap between the adjacent nanometer island is 100～900nm.
In the said step 5), use Cl during etching simultaneously
2, BCl
3And Ar
2As etching gas, Cl wherein
2Flow is 30～100sccm, BCl
3Flow is 5～20sccm, Ar
2Flow is 5～25sccm; Etching power is 500～1000W; Radio-frequency power is 100～300W; Etch period is 5～15 min.
The bowl-shape sapphire graphical diameter of said each nanometer of said step 6) is 100～900nm, and the degree of depth is 0.3～1.2 μ m.
The said BOE solution of said step 6) is for being HF and the NH of 1:7 by volume ratio
4F forms.
In the said step 6), the time of in BOE solution, soaking is 10～90s.
Description of drawings
Fig. 1 is the article construction sketch map that embodiment of the invention step 2 forms.
Fig. 2 is the article construction sketch map that embodiment of the invention step 3 forms.
Fig. 3 is the article construction sketch map that embodiment of the invention step 4 forms.
Fig. 4 is the article construction sketch map that embodiment of the invention step 6 forms.
XRD (X ray double crystal diffraction) the characteristic comparison diagram of the basic LED material of GaN on the micron graph substrate that the GaN base LED material on the nano graph substrate that Fig. 5 processes for the present invention and conventional method are processed.
Embodiment
One, the manufacture craft of the bowl-shape sapphire graphical substrate of nanometer:
Step 1: Sapphire Substrate 1 is put into evaporator, at Sapphire Substrate 1 upper surface vapor deposition cesium chloride film, time 5～40min, the cesium chloride film thickness of formation is 100～800 nanometers.
Step 2: after vapor deposition finishes; In the evaporator chamber, charge into steam; 5～30 minutes time grew up Sapphire Substrate 1 surperficial cesium chloride absorption moisture gradually and forms cesium chloride nanometer island 2, and the diameter on each nanometer island 2 is respectively 100～900nm; Gap between the adjacent nanometer island 2 is 100～900nm, and duty ratio is 1:1.As shown in Figure 1.
Step 3: adopt PECVD (plasma enhanced chemical vapor deposition) method cvd silicon dioxide film 3, thickness 0.5～1um on the Sapphire Substrate that is coated with cesium chloride nanometer island 22 surfaces.As shown in Figure 2.
Step 4: above-mentioned epitaxial wafer was put into deionized water for ultrasonic 5～15 minutes; Remove the cesium chloride nanometer island 2 of sapphire surface; Form silica nanometer bowl layer 3; This silica nanometer bowl layer 3 is served as reasons continuous a plurality of back sides respectively towards the bowl-type silica nano material composition of Sapphire Substrate 1, and is as shown in Figure 3.
Step 5: silica nanometer bowl layer 3 is carried out ICP (inductively coupled plasma) etching as etch mask, use Cl simultaneously
2, BCl
3And Ar
2As etching gas, Cl wherein
2Flow is 30～100sccm, BCl
3Flow is 5～20sccm, Ar
2Flow is 5～25sccm; Etching power is 500～1000W; Radio-frequency power is 100～300W; Etch period is 5～15 min.Each bowl-type silica nanometer layer of silica nanometer bowl layer 3 is connected on the Sapphire Substrate 1, promptly nanometer bowl figure transfer on Sapphire Substrate 1.
Step 6: with HF and NH
4F mixes with the volume ratio of 1:7, forms BOE solution.
The semi-products that above technology is formed are ultrasonic or soak 10 ~ 90s in BOE solution; Remove Sapphire Substrate 1 surface silica dioxide nanometer bowl layer 3 clean; Expose the bowl-shape patterned sapphire surface of nanometer; The bowl-shape sapphire graphical diameter of each nanometer is 100～900nm, and the degree of depth is 0.3～1.2 μ m.As shown in Figure 4.
So far, processed the bowl-shape sapphire graphical substrate of nanometer.
Two, use:
The bowl-shape sapphire graphical substrate of nanometer that the present invention is processed adopts method in common, in the bowl-shape patterned sapphire superficial growth GaN base LED material of nanometer.
Three, effect comparison:
XRD (X ray double crystal diffraction) the characteristic comparison diagram of the basic LED material of GaN on the micron graph substrate that the GaN base LED material on the nano graph substrate that Fig. 5 processes for the present invention and conventional method are processed.
Visible by Fig. 5, the GaN base LED material on the nano graph substrate is less at the halfwidth of (0002) direction X-ray diffraction test, luminous intensity increases, and reflects that quality of materials is better.
Also visible: the LED device of processing with sapphire graphical substrate of the present invention can increase the escape exit probability of light greatly, improves light extraction efficiency.
Claims (7)
1. the manufacture method of the bowl-shape sapphire graphical substrate of nanometer is characterized in that comprising following production stage:
1) on evaporator, vapor deposition thickness is the cesium chloride film of 100～800 nanometers on the Sapphire Substrate surface;
2) in the evaporator chamber, charge into steam, the cesium chloride film absorption moisture on Sapphire Substrate surface is grown up form cesium chloride nanometer island, making the duty ratio in the gap between each nanometer island and the adjacent nanometer island is 1:1;
3) be the silica membrane of 0.5～1um at the outer surface employing PECVD on cesium chloride nanometer island method deposit thickness;
4) with deionized water ultrasonic 5～15 minutes, the cesium chloride nanometer island of removing sapphire surface formed silica nanometer bowl layer, and this silica nanometer bowl layer continuous a plurality of back side of serving as reasons are formed towards the bowl-type silica nano material of Sapphire Substrate respectively;
5) with silica nanometer bowl layer as etch mask, sapphire surface is carried out the ICP etching, each bowl-type silica nanometer layer of silica nanometer bowl layer 3 is connected on the Sapphire Substrate;
6) ultrasonic or immersion in BOE solution is removed the silica nanometer bowl layer on Sapphire Substrate surface totally, exposes the bowl-shape patterned sapphire surface of nanometer.
2. according to the manufacture method of the bowl-shape sapphire graphical substrate of the said nanometer of claim 1, it is characterized in that: the vapor deposition time of said step 1) is 5～40min.
3. according to the manufacture method of the bowl-shape sapphire graphical substrate of the said nanometer of claim 1, it is characterized in that: said step 2) diameter on each nanometer island is respectively 100～900nm, and the gap between the adjacent nanometer island is 100～900nm.
4. according to the manufacture method of the bowl-shape sapphire graphical substrate of the said nanometer of claim 1, it is characterized in that: in the said step 5), use Cl during etching simultaneously
2, BCl
3And Ar
2As etching gas, Cl wherein
2Flow is 30～100sccm, BCl
3Flow is 5～20sccm, Ar
2Flow is 5～25sccm; Etching power is 500～1000W; Radio-frequency power is 100～300W; Etch period is 5～15 min.
5. according to the manufacture method of the bowl-shape sapphire graphical substrate of the said nanometer of claim 1, it is characterized in that: the bowl-shape sapphire graphical diameter of said each nanometer of said step 6) is 100～900nm, and the degree of depth is 0.3～1.2 μ m.
6. according to the manufacture method of the bowl-shape sapphire graphical substrate of the said nanometer of claim 1, it is characterized in that: the said BOE solution of said step 6) is for being HF and the NH of 1:7 by volume ratio
4F forms.
7. according to the manufacture method of the bowl-shape sapphire graphical substrate of the said nanometer of claim 6, it is characterized in that: in the said step 6), the time of in BOE solution, soaking is 10～90s.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094415A (en) * | 2013-01-14 | 2013-05-08 | 中国科学院高能物理研究所 | Silicon photocell nano lubricating P-N node structure and manufacture method of silicon photocell nano lubricating P-N node structure |
| CN110098298A (en) * | 2018-01-29 | 2019-08-06 | 山东浪潮华光光电子股份有限公司 | A kind of GaN base LED wafer metal electrode pattern-producing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101814427A (en) * | 2010-03-26 | 2010-08-25 | 中山大学 | Method for preparing GaN-based pattern substrate template |
| US20100270651A1 (en) * | 2009-04-27 | 2010-10-28 | Aurotek Corporation | Sapphire substrate with periodical structure |
| CN102157640A (en) * | 2011-03-17 | 2011-08-17 | 中国科学院半导体研究所 | Method for manufacturing gallium nitride (GaN)-based light-emitting diode (LED) chip with p-GaN layer subjected to surface roughening |
-
2012
- 2012-08-09 CN CN2012102817412A patent/CN102790150A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100270651A1 (en) * | 2009-04-27 | 2010-10-28 | Aurotek Corporation | Sapphire substrate with periodical structure |
| CN101814427A (en) * | 2010-03-26 | 2010-08-25 | 中山大学 | Method for preparing GaN-based pattern substrate template |
| CN102157640A (en) * | 2011-03-17 | 2011-08-17 | 中国科学院半导体研究所 | Method for manufacturing gallium nitride (GaN)-based light-emitting diode (LED) chip with p-GaN layer subjected to surface roughening |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094415A (en) * | 2013-01-14 | 2013-05-08 | 中国科学院高能物理研究所 | Silicon photocell nano lubricating P-N node structure and manufacture method of silicon photocell nano lubricating P-N node structure |
| CN103094415B (en) * | 2013-01-14 | 2015-07-08 | 中国科学院高能物理研究所 | Silicon photocell nano lubricating P-N node structure and manufacture method of silicon photocell nano lubricating P-N node structure |
| CN110098298A (en) * | 2018-01-29 | 2019-08-06 | 山东浪潮华光光电子股份有限公司 | A kind of GaN base LED wafer metal electrode pattern-producing method |
| CN110098298B (en) * | 2018-01-29 | 2020-05-08 | 山东浪潮华光光电子股份有限公司 | GaN-based LED wafer metal electrode pattern manufacturing method |
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Application publication date: 20121121 |