CN102756513A - 铝合金或镁合金防腐处理方法及铝合金或镁合金制品 - Google Patents
铝合金或镁合金防腐处理方法及铝合金或镁合金制品 Download PDFInfo
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Abstract
本发明一种铝合金或镁合金防腐处理方法,包括如下步骤:提供铝合金或镁合金基体;采用真空镀膜的方式,以银铝合金靶为靶材,以氧气及氮气为反应气体,于该铝合金或镁合金基体上形成银-氮氧铝层;于该银-氮氧铝层上形成颜色层及绝缘层。本发明还提供了经上述方法制得的铝合金或镁合金制品。该铝合金或镁合金制品具有良好的耐腐蚀性。
Description
技术领域
本发明涉及一种铝合金或镁合金防腐处理方法及铝合金或镁合金制品。
背景技术
铝合金、镁合金具有质量轻、散热性能好等诸多优点,在通讯、电子、交通运输、建筑以及航空航天等领域的应用非常广泛。在空气中铝合金或镁合金表面会形成氧化铝或氧化镁的保护膜,在一般的大气环境下,铝合金或镁合金表面的这层氧化铝或氧化镁膜能够有效地保护铝合金或镁合金基体。但在含有氯离子的湿气中,由于氯离子含有一定的水合能,易于吸附在铝合金或镁合金表面的孔隙、裂缝中,排挤并取代氧化铝或氧化镁膜中的氧原子,把不溶性的氧化物变成可溶性的氯化物,从而导致产品使用寿命缩短。为了提高铝合金或镁合金产品的耐腐蚀性能(或耐盐雾性能),通常要对铝合金或镁合金基体进行表面处理,如阳极氧化、烤漆等,但这些工艺都存在较大的环境污染。
真空镀膜技术(PVD)是一种较环保的镀膜技术。PVD膜层具有高硬度、高耐磨性、良好的化学稳定性等优点,因此在表面防护或装饰处理领域的应用越来越广。而对于铝合金来说,其标准电极电位与许多PVD功能性膜层(如装饰性的颜色层等)的差异较大,极易造成电偶腐蚀,使整个铝合金产品失效。
据悉,目前有通过设置一绝缘层于铝合金或镁合金基体与功能性膜层之间来防止铝合金或镁合金基体的电偶腐蚀及失效,但收效甚微。这是由于PVD膜层本身不可避免的会存在缺陷,如针孔、裂纹等,这些缺陷将成为电解质溶液的通道,使铝合金或镁合金基体和表面的功能性膜层相连形成微电池。此时,功能性膜层成为微电池的阴极,而铝合金或镁合金基体表面的微小孔洞接触点成为阳极,由于阴极的面积远远大于阳极的面积,即阴阳极的面积比趋于无限大,致使腐蚀电流极大而急剧加速了腐蚀。这种腐蚀失效严重限制了铝合金或镁合金基体于PVD镀膜技术的应用。
发明内容
鉴于此,有必要提供一种可克服上述缺陷的铝合金或镁合金防腐处理方法。
另外,还有必要提供一种经由上述防腐处理方法所制得的铝合金或镁合金制品。
一种铝合金或镁合金防腐处理方法,包括如下步骤:
提供铝合金或镁合金基体;
采用真空镀膜的方式,以银铝合金靶为靶材,以氧气及氮气为反应气体,于该铝合金或镁合金基体上形成银-氮氧铝层;
于该银-氮氧铝层上形成颜色层及绝缘层。
一种铝合金或镁合金制品,所述铝合金或镁合金制品包括铝合金或镁合金基体、依次形成于铝合金或镁合金基体上的银-氮氧铝层、颜色层及绝缘层。
相较于现有技术,所述的铝合金防腐处理方法通过对铝合金或镁合金基体表面的PVD膜系进行结构调整,将装饰性的颜色层与绝缘层的位置互换,将绝缘层设置为外表层,这样一来,所述绝缘层阻挡了大部分的电解质溶液,仅少部分的电解质溶液到达颜色层表面,使颜色层的阴极面积大大降低,腐蚀电流也随之大大降低,从而极大地降低了发生腐蚀的速率,提高了铝合金或镁合金制品的耐腐蚀性能。
进一步地,在所述银-氮氧铝层中银元素主要以离子键的形式与其他元素结合,当与电解质接触时,银原子易于电离成银离子与电解质中的氯离子反应生成氯化银沉淀填充该银-氮氧铝层的部分针孔,如此可阻挡电解质溶液,使到达铝合金或镁合金基体的电解质溶液的浓度进一步降低,腐蚀电流也随之进一步降低,进一步提高了铝合金或镁合金制品的耐腐蚀性能。
附图说明
图1是本发明一较佳实施方式的铝合金或镁合金制品的剖视示意图;
图2是本发明一较佳实施例真空镀膜机的示意图。
主要元件符号说明
铝合金或镁合金制品 | 10 |
铝合金或镁合金基体 | 11 |
银-铝打底层 | 13 |
银-氮氧铝层 | 15 |
颜色层 | 17 |
绝缘层 | 19 |
真空镀膜机 | 20 |
镀膜室 | 21 |
银铝合金靶 | 23 |
铬靶 | 24 |
硅靶 | 25 |
轨迹 | 26 |
真空泵 | 30 |
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
请结合参阅图1与图2,本发明一较佳实施方式的铝合金或镁合金防腐处理方法包括如下步骤:
提供铝合金或镁合金基体11,该铝合金或镁合金基体11可以通过冲压成型得到。
对该铝合金或镁合金基体11进行清洁前处理。该清洁前处理包括:采用去离子水和无水乙醇依次对所述铝合金或镁合金基体11的表面进行擦拭,然后将该铝合金或镁合金基体11置于丙酮中进行超声波清洗,以去除表面的油污。清洗后将该铝合金或镁合金基体11干燥备用。
对经所述清洁前处理的铝合金或镁合金基体11的表面进行氩气等离子体清洗,以进一步去除铝合金或镁合金基体11表面的油污,以及改善铝合金或镁合金基体11表面与后续镀层的结合力。
请再次参阅图2,提供一真空镀膜机20,该真空镀膜机20包括一镀膜室21及连接于镀膜室21的一真空泵30,真空泵30用以对镀膜室21抽真空。该镀膜室21内设有转架(未图示)、相对设置的二银铝合金靶23、相对设置的二铬靶24及相对设置的二硅靶25。转架带动铝合金或镁合金基体11沿圆形的轨迹26公转,且铝合金或镁合金基体11在沿轨迹26公转时亦自转。其中,所述银铝合金靶23中银元素的质量百分含量为10~25%。
该等离子体清洗的具体操作及工艺参数可为:将铝合金或镁合金基体11固定于真空镀膜机20的镀膜室21中的转架上,将该镀膜室21抽真空至8.0×10-3Pa左右,然后向镀膜室21内通入流量约为500sccm(标准状态毫升/分钟)的氩气(纯度为99.999%),并施加-500~-800V的偏压于铝合金或镁合金基体11,对铝合金或镁合金基体11表面进行氩气等离子体清洗,清洗时间为5~10min。
采用磁控溅射法在经氩气等离子体清洗后的铝合金或镁合金基体11上溅镀一银-铝(Ag-Al)打底层13。形成Ag-Al打底层13的具体操作方法及工艺参数为:开启银铝合金靶23,设置该银铝合金靶23的功率为2~8kW;以氩气为工作气体,氩气流量为100~300sccm;溅镀时对铝合金或镁合金基体11施加-50~-300V的偏压,并加热所述镀膜室21至温度为100~200℃,镀膜时间可为5~10min。所述Ag-Al打底层13的厚度为100~200nm。
采用磁控溅射法在Ag-Al打底层13上溅镀一银-氮氧铝(Ag-AlON)层15。形成Ag-AlON层15的具体操作方法及工艺参数为:保持所述银铝合金靶23的功率、镀膜温度、氩气的流量及对铝合金或镁合金基体11施加的偏压不变;以氮气及氧气为反应气体,氮气的流量为10~20sccm,氧气的流量为10~20sccm,镀膜时间可为30~120min。所述Ag-AlON层15的厚度为500~700nm。溅射完成该Ag-AlON层15后,停止通入氧气并关闭所述银铝合金靶23的电源。
由于所述Ag-AlON层15在其形成过程中可形成Al-O与Al-N的两相化合物,上述两相化合物的形成可相互抑制各相晶粒的生长,从而可降低各相晶粒的尺寸,使得所述Ag-AlON层15的致密性增强。进一步地,在所述Ag-AlON层15中银元素主要以离子键的形式与其他元素结合,当与电解质接触时,银原子易于电离成银离子与电解质中的氯离子反应生成氯化银沉淀填充该Ag-AlON层15的部分针孔,如此可进一步增强该Ag-AlON层15的致密性。
于Ag-AlON层15上溅射一颜色层17。形成颜色层17的具体操作方法及工艺参数为:开启铬靶24,设置其功率为5~10kw;以氮气为反应气体,氮气流量为10~120sccm,以氩气为工作气体,氩气流量为100~200sccm;溅镀时对铝合金铝合金或镁合金基体11施加-100~-300V的偏压,并加热所述镀膜室21至温度为50~150℃,镀膜时间可为15~50min。该颜色层17为铬-氮(Cr-N)层,其厚度为300~500nm。溅射完成该颜色层17后,停止通入氮气并关闭所述铬靶24的电源。
于所述颜色层17上溅射一绝缘层19,制得铝合金或镁合金制品10。形成绝缘层19的具体操作方法及工艺参数为:开启硅靶25,该硅靶25的功率设置为2~8kW;以氧气为反应气体,氧气的流量为10~20sccm,以氩气为工作气体,氩气流量为100~300ccm;溅镀时对铝合金或镁合金基体11施加-50~-300V的偏压,并加热所述镀膜室21至温度为150~200℃,镀膜时间可为30~50min。所述绝缘层19为透明的SiO2层,其厚度为800~1000nm。溅射完成该绝缘层19后,关闭所述硅靶25的电源。
关闭负偏压、硅靶25的电源,停止通入氩气及氧气,待所述绝缘层19冷却后,向镀膜内通入空气,打开镀膜室门,取出所述铝合金或镁合金制品10。
可以理解的,所述颜色层17还可以为TiNO层、TiCN层、TiN层、CrNO层、CrCN层或其他任意具装饰色彩的膜层。该颜色层17也可被其他的功能性膜层所替代。
可以理解的,所述Ag-AlON层15及所述绝缘层19还可通过电弧离子镀膜法、蒸发镀膜法等其他真空镀膜法形成。
可以理解的,所述绝缘层19还可以为氧化铝层、聚四氟乙烯层、绝缘漆层、绝缘油墨层或其他任意的绝缘层。所述氧化铝层可通过真空镀膜法形成,所述聚四氟乙烯层可通过化学气相沉积或喷涂等方法形成,所述绝缘漆层、绝缘油墨层可通过喷涂或印刷等方式形成。
可以理解的,所述绝缘层19可制作为透明状或半透明状,以满足产品的外观需求。
本发明一较佳实施方式的经由上述防腐处理方法所制得的铝合金或镁合金制品10包括铝合金或镁合金基体11、依次形成于该铝合金或镁合金基体11上的Ag-AlON层15、颜色层17及绝缘层19。
该铝合金或镁合金制品10可以为3C电子产品的铝合金或镁合金制品,也可为通讯、电子、交通运输、建筑以及航空航天等领域的任意铝合金零部件或装饰件。
相较于现有技术,所述的铝合金防腐处理方法通过对铝合金或镁合金基体11表面的PVD膜系进行结构调整,将装饰性的颜色层17与绝缘层19的位置互换,将绝缘层19设置为外表层,这样一来,所述绝缘层19阻挡了大部分的电解质溶液,仅少部分的电解质溶液到达颜色层17表面,使颜色层17的阴极面积大大降低,腐蚀电流也随之大大降低,从而极大地降低了发生腐蚀的速率,提高了铝合金或镁合金制品10的耐腐蚀性能。同时,由于绝缘层19为透明层,其不会影响到颜色层17对铝合金或镁合金制品10的装饰性功能。
进一步地,所述的铝合金或镁合金防腐处理方法在形成颜色层17之前于铝合金或镁合金基体11表面设置Ag-AlON层15,由于该Ag-AlON层15本身具有良好的致密性,且电离形成的银离子与电解质中的氯离子反应生成氯化银沉淀可填充该Ag-AlON层15的部分针孔,如此可阻挡电解质溶液,使到达铝合金或镁合金基体11的电解质溶液的浓度进一步降低,腐蚀电流也随之进一步降低,进一步提高了铝合金或镁合金制品10的耐腐蚀性能。
Claims (12)
1.一种铝合金或镁合金制品,其特征在于:所述铝合金或镁合金制品包括铝合金或镁合金基体、依次形成于铝合金或镁合金基体上的银-氮氧铝层、颜色层及绝缘层。
2.如权利要求1所述的铝合金或镁合金制品,其特征在于:所述绝缘层为氧化硅层。
3.如权利要求2所述的铝合金或镁合金制品,其特征在于:所述绝缘层的厚度为200~400nm。
4.如权利要求1所述的铝合金或镁合金制品,其特征在于:所述绝缘层为氧化铝层、聚四氟乙烯层、绝缘漆层或绝缘油墨层。
5.如权利要求2或4所述的铝合金或镁合金制品,其特征在于:所述绝缘层为透明层。
6.如权利要求1所述的铝合金或镁合金制品,其特征在于:所述银-氮氧铝层的厚度为500~700nm。
7.如权利要求1所述的铝合金或镁合金制品,其特征在于:所述铝合金或镁合金制品还包括形成于所述铝合金或镁合金基体与银-氮氧铝层之间的银-铝打底层。
8.一种铝合金或镁合金防腐处理方法,包括如下步骤:
提供铝合金或镁合金基体;
采用真空镀膜的方式,以银铝合金靶为靶材,以氧气及氮气为反应气体,于该铝合金或镁合金基体上形成银-氮氧铝层;
于该银-氮氧铝层上形成颜色层及绝缘层。
9.如权利要求8所述的铝合金或镁合金防腐处理方法,其特征在于:形成所述银-氮氧铝层的步骤以如下方式进行:设置银铝合金靶的功率为2~8kW,氮气的流量为10~20sccm,氧气的流量为10~20sccm,以氩气为工作气体,氩气流量为100~300sccm;施加于铝合金或镁合金基体的偏压为-50~-300V,镀膜温度为100~200℃,镀膜时间为30~120min。
10.如权利要求8所述的铝合金或镁合金防腐处理方法,其特征在于:形成所述绝缘层的步骤为:以硅靶为靶材,设置其功率为2~8kW;以氧气为反应气体,氧气的流量为10~20sccm,以氩气为工作气体,氩气流量为100~300sccm,施加于铝合金或镁合金基体的偏压为-50~-300V,镀膜温度为150~200℃,镀膜时间为30~50min。
11.如权利要求8所述的铝合金或镁合金防腐处理方法,其特征在于:所述绝缘层为氧化铝层、聚四氟乙烯层、绝缘漆层或绝缘油墨层。
12.如权利要求8所述的铝合金或镁合金防腐处理方法,其特征在于:所述铝合金或镁合金防腐处理方法还包括在形成银-氮氧铝层之前于铝合金或镁合金基体上形成形成银-铝打底层的步骤。
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CN109518142A (zh) * | 2019-01-27 | 2019-03-26 | 佛山市南海区晶鼎泰机械设备有限公司 | 一种铝合金表面的pvd真空镀膜工艺 |
CN115896726A (zh) * | 2023-02-22 | 2023-04-04 | 中国科学院宁波材料技术与工程研究所 | 一种MAX-Ag相复合涂层及其制备方法和应用 |
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DE102014222347A1 (de) * | 2014-11-03 | 2016-05-19 | MTU Aero Engines AG | Verfahren zur Herstellung einer hochtemperaturfesten Ziellegierung, eine Vorrichtung, eine Legierung und ein entsprechendes Bauteil |
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