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CN102723288A - Flip chip single-faced three-dimensional circuit manufacture method by encapsulation prior to etching and flip chip single-faced three-dimensional circuit encapsulation structure - Google Patents

Flip chip single-faced three-dimensional circuit manufacture method by encapsulation prior to etching and flip chip single-faced three-dimensional circuit encapsulation structure Download PDF

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CN102723288A
CN102723288A CN2012101900111A CN201210190011A CN102723288A CN 102723288 A CN102723288 A CN 102723288A CN 2012101900111 A CN2012101900111 A CN 2012101900111A CN 201210190011 A CN201210190011 A CN 201210190011A CN 102723288 A CN102723288 A CN 102723288A
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metal substrate
metal
chip
pin
green lacquer
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CN102723288B (en
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王新潮
李维平
梁志忠
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

本发明涉及一种芯片倒装单面三维线路先封后蚀制造方法,它包括以下工艺步骤:取金属基板;金属基板表面预镀铜材;绿漆披覆;金属基板正面去除部分绿漆;电镀惰性金属线路层;电镀金属线路层;绿漆披覆;金属基板正面去除部分绿漆;电镀金属线路层;绿漆披覆;金属基板正面去除部分绿漆;覆上线路网板;金属化前处理;移除线路网板;电镀金属线路层;装片及芯片底部填充;包封;金属基板背面去除部分绿漆;化学蚀刻;电镀金属线路层;绿漆披覆;绿漆表面开孔;清洗;植球;切割成品。本发明的有益效果是:降低了制造成本,提高了封装体的安全性和可靠性,减少了环境污染,能够真正做到高密度线路的设计和制造。

The invention relates to a manufacturing method of chip flip-chip single-sided three-dimensional circuit, which includes the following process steps: taking a metal substrate; pre-plating copper on the surface of the metal substrate; coating with green paint; removing part of the green paint from the front of the metal substrate; Electroplating inert metal circuit layer; electroplating metal circuit layer; green paint coating; removing part of the green paint on the front of the metal substrate; electroplating metal circuit layer; green paint coating; removing part of the green paint on the front of the metal substrate; Pre-treatment; removal of circuit board; electroplating metal circuit layer; chip loading and chip underfill; encapsulation; removal of part of the green paint on the back of the metal substrate; chemical etching; electroplating metal circuit layer; ; Cleaning; Planting balls; Cutting finished products. The beneficial effects of the invention are: the manufacturing cost is reduced, the safety and reliability of the packaging body are improved, the environmental pollution is reduced, and the design and manufacture of high-density circuits can be truly achieved.

Description

芯片倒装单面三维线路先封后蚀制造方法及其封装结构Flip-chip single-sided three-dimensional circuit manufacturing method and packaging structure after sealing first and etching later

技术领域 technical field

本发明涉及一种芯片倒装单面三维线路先封后蚀制造方法及其封装结构,属于半导体封装技术领域。 The invention relates to a chip flip-chip single-sided three-dimensional circuit manufacturing method which is first sealed and then etched and its packaging structure, which belongs to the technical field of semiconductor packaging.

背景技术 Background technique

传统的高密度基板封装结构的制造工艺流程如下所示: The manufacturing process flow of the traditional high-density substrate package structure is as follows:

步骤一、参见图53,取一玻璃纤维材料制成的基板, Step 1, referring to Figure 53, take a substrate made of glass fiber material,

步骤二、参见图54,在玻璃纤维基板上所需的位置上开孔, Step 2, see Figure 54, make holes on the required position on the glass fiber substrate,

步骤三、参见图55,在玻璃纤维基板的背面披覆一层铜箔, Step 3, see Figure 55, coat a layer of copper foil on the back of the glass fiber substrate,

步骤四、参见图56,在玻璃纤维基板打孔的位置填入导电物质, Step 4, see Figure 56, fill in the conductive material at the position where the glass fiber substrate is punched,

步骤五、参见图57,在玻璃纤维基板的正面披覆一层铜箔, Step 5, see Figure 57, coat a layer of copper foil on the front of the glass fiber substrate,

步骤六、参见图58,在玻璃纤维基板表面披覆光阻膜, Step 6, see Figure 58, coat the photoresist film on the surface of the glass fiber substrate,

步骤七、参见图59,将光阻膜在需要的位置进行曝光显影开窗, Step 7, see Figure 59, expose and develop the photoresist film at the required position to open the window,

步骤八、参见图60,将完成开窗的部分进行蚀刻, Step 8, see Figure 60, etch the part where the window is opened,

步骤九、参见图61,将基板表面的光阻膜剥除, Step 9, see Figure 61, peel off the photoresist film on the surface of the substrate,

步骤十、参见图62,在铜箔线路层的表面进行防焊漆(俗称绿漆)的披覆, Step 10, see Figure 62, apply solder resist paint (commonly known as green paint) on the surface of the copper foil circuit layer,

步骤十一、参见图63,在防焊漆需要进行后工序的装片以及打线键合的区域进行开窗, Step 11. Referring to Figure 63, open the window in the area where the solder resist paint needs to be installed in the post-process and wire bonded.

步骤十二、参见图64,在步骤十一进行开窗的区域进行电镀,相对形成基岛和引脚, Step 12, see Figure 64, perform electroplating on the area where the window is opened in step 11, and relatively form base islands and pins,

步骤十三、完成后续的装片、打线、包封、切割等相关工序。 Step thirteen, complete subsequent related processes such as film loading, wire bonding, encapsulation, and cutting.

上述传统高密度基板封装结构存在以下不足和缺陷: The above-mentioned traditional high-density substrate packaging structure has the following deficiencies and defects:

1、多了一层的玻璃纤维材料,同样的也多了一层玻璃纤维的成本; 1. There is an extra layer of glass fiber material, and also the cost of an extra layer of glass fiber;

2、因为必须要用到玻璃纤维,所以就多了一层玻璃纤维厚度约100~150μm的厚度空间; 2. Because glass fiber must be used, there is an extra layer of glass fiber thickness of about 100~150μm;

3、玻璃纤维本身就是一种发泡物质,所以容易因为放置的时间与环境吸入水分以及湿气,直接影响到可靠性的安全能力或是可靠性的等级; 3. Glass fiber itself is a kind of foaming material, so it is easy to absorb moisture and moisture due to the storage time and environment, which directly affects the safety capability or reliability level of reliability;

4、玻璃纤维表面被覆了一层约50~100μm的铜箔金属层厚度,而金属层线路与线路的蚀刻距离也因为蚀刻因子的特性只能做到50~100μm的蚀刻间隙(参见图65,最好的制作能力是蚀刻间隙约等同于被蚀刻物体的厚度),所以无法真正的做到高密度线路的设计与制造; 4. The surface of the glass fiber is covered with a copper foil metal layer thickness of about 50-100 μm, and the etching distance between the metal layer line and the line can only achieve an etching gap of 50-100 μm due to the characteristics of the etching factor (see Figure 65, The best production capacity is that the etching gap is approximately equal to the thickness of the etched object), so it is impossible to truly design and manufacture high-density circuits;

5、因为必须要使用到铜箔金属层,而铜箔金属层是采用高压粘贴的方式,所以铜箔的厚度很难低于50μm的厚度,否则就很难操作如不平整或是铜箔破损或是铜箔延展移位等等; 5. Because the copper foil metal layer must be used, and the copper foil metal layer is pasted by high pressure, so the thickness of the copper foil is difficult to be less than 50μm, otherwise it will be difficult to operate such as unevenness or copper foil damage Or the extension and displacement of copper foil, etc.;

6、也因为整个基板材料是采用玻璃纤维材料,所以明显的增加了玻璃纤维层的厚度100~150μm,无法真正的做到超薄的封装; 6. Also because the entire substrate material is made of glass fiber material, the thickness of the glass fiber layer is obviously increased by 100~150 μm, and it is impossible to achieve ultra-thin packaging;

7、传统玻璃纤维加贴铜箔的工艺技术因为材质特性差异很大(膨胀系数),在恶劣环境的工序中容易造成应力变形,直接的影响到元件装载的精度以及元件与基板粘着性与可靠性。 7. Due to the large difference in material properties (expansion coefficient), the traditional glass fiber plus copper foil technology is easy to cause stress deformation in the harsh environment process, which directly affects the accuracy of component loading and the adhesion and reliability of components and substrates. sex.

发明内容 Contents of the invention

本发明的目的在于克服上述不足,提供一种芯片倒装单面三维线路先封后蚀制造方法及其封装结构,其工艺简单,不需使用玻璃纤维层,减少了制造成本,提高了封装体的安全性和可靠性,减少了玻璃纤维材料带来的环境污染,而且金属基板线路层采用的是电镀方法,能够真正做到高密度线路的设计和制造。 The purpose of the present invention is to overcome the above disadvantages, to provide a flip-chip single-sided three-dimensional circuit first sealed and then etched manufacturing method and its packaging structure, the process is simple, no need to use glass fiber layer, reducing the manufacturing cost, improving the packaging body The safety and reliability of the circuit reduce the environmental pollution caused by the glass fiber material, and the metal substrate circuit layer adopts the electroplating method, which can truly achieve the design and manufacture of high-density circuits.

本发明的目的是这样实现的:一种芯片倒装单面三维线路先封后蚀制造方法,它包括以下工艺步骤:  The object of the present invention is achieved like this: a kind of flip-chip single-sided three-dimensional circuit first encapsulates and then etch manufacturing method, it comprises the following process steps:

步骤一、取金属基板 Step 1. Take the metal substrate

步骤二、金属基板表面预镀铜材 Step 2. Pre-plating copper on the surface of the metal substrate

在金属基板表面电镀一层铜材薄膜,  Electroplate a layer of copper film on the surface of the metal substrate,

步骤三、绿漆披覆 Step 3, green paint coating

在步骤二完成预镀铜材薄膜的金属基板正面及背面进行绿漆的被覆,  In step 2, the front and back of the metal substrate of the pre-plated copper film are covered with green paint,

步骤四、金属基板正面去除部分绿漆 Step 4. Remove part of the green paint from the front of the metal substrate

利用曝光显影设备在步骤三完成绿漆披覆的金属基板正面进行图形曝光、显影以及开窗,以露出金属基板正面后续需要进行电镀的图形区域; Use the exposure and development equipment to complete the pattern exposure, development and window opening on the front of the metal substrate coated with green paint in step 3, so as to expose the pattern area that needs to be electroplated on the front of the metal substrate;

步骤五、电镀惰性金属线路层 Step 5. Electroplating inert metal circuit layer

将步骤四金属基板正面已完成开窗的图形区域电镀上惰性金属线路层,  Electroplate the inert metal circuit layer on the pattern area where the window has been opened on the front side of the metal substrate in step 4,

步骤六、电镀金属线路层 Step 6. Plating metal circuit layer

在步骤五中的惰性金属线路层表面镀上金属线路层,  Metal circuit layer is plated on the surface of inert metal circuit layer in step five,

步骤七、绿漆披覆 Step 7. Green paint coating

在步骤六完成电镀金属线路层的金属基板正面再次进行绿漆的被覆,  In step 6, the front side of the metal substrate on which the electroplating metal circuit layer is completed is covered with green paint again,

步骤八、金属基板正面去除部分绿漆 Step 8. Remove part of the green paint from the front of the metal substrate

利用曝光显影设备在步骤七完成绿漆披覆的金属基板正面进行图形曝光、显影以及开窗,以露出金属基板正面后续需要进行电镀的图形区域, Use the exposure and development equipment to complete the pattern exposure, development and window opening on the front of the metal substrate coated with green paint in step 7, so as to expose the pattern area that needs to be electroplated on the front of the metal substrate.

步骤九、电镀金属线路层 Step 9. Plating metal circuit layer

将步骤八金属基板正面已完成开窗的图形区域电镀上金属线路层,  Electroplate the metal circuit layer on the pattern area where the window has been opened on the front of the metal substrate in step 8,

步骤十、绿漆披覆 Step 10. Green paint coating

在步骤九完成电镀金属线路层的金属基板正面再次进行绿漆的被覆,  In step 9, the front of the metal substrate on which the electroplating metal circuit layer is completed is covered with green paint again,

步骤十一、金属基板正面去除部分绿漆 Step 11. Remove part of the green paint from the front of the metal substrate

利用曝光显影设备在步骤十完成绿漆披覆的金属基板正面进行图形曝光、显影以及开窗,以露出金属基板正面后续需要进行电镀的图形区域, Use the exposure and development equipment to perform pattern exposure, development and window opening on the front of the metal substrate coated with green paint in step ten, so as to expose the pattern area on the front of the metal substrate that needs to be electroplated later,

步骤十二、覆上线路网板 Step 12. Cover the circuit board

在金属基板正面覆上线路网板,  Cover the circuit board on the front of the metal substrate,

步骤十三、金属化前处理 Step 13, pre-metallization treatment

对步骤十一金属基板正面已完成开窗的图形区域进行电镀金属线路层的金属化前处理, Carry out pre-metallization treatment of the electroplated metal circuit layer on the graphic area where the window has been opened on the front side of the metal substrate in step 11,

步骤十四、移除线路网板 Step 14. Remove the circuit board

将步骤十二中金属基板正面覆上的线路网板移除, Remove the circuit board covered on the front side of the metal substrate in step 12,

步骤十五、电镀金属线路层 Step 15. Electroplating the metal circuit layer

将步骤十三金属基板正面完成电镀金属线路层前处理的区域电镀上金属线路层,所述金属线路层电镀完成后即在金属基板正面相对形成引脚或基岛和引脚的上部, Electroplate the metal circuit layer on the area where the metal circuit layer pre-treatment is completed on the front side of the metal substrate in step 13. After the metal circuit layer is electroplated, the pins or the base island and the upper part of the pins are relatively formed on the front side of the metal substrate.

步骤十六、装片及芯片底部填充 Step 16, chip loading and chip bottom filling

在步骤十五相对形成的引脚的上部正面倒装上芯片及芯片底部填充环氧树脂, Flip chip on the upper side of the pins formed in step 15 and fill the bottom of the chip with epoxy resin,

步骤十七、包封 Step seventeen, encapsulation

将步骤十六完成芯片倒装及芯片底部填充后的金属基板正面进行包封塑封料作业,  Encapsulate the front side of the metal substrate after chip flip-chip and chip underfill in step 16,

步骤十八、金属基板背面去除部分绿漆 Step 18. Remove part of the green paint on the back of the metal substrate

利用曝光显影设备对金属基板背面披覆的绿漆进行图形曝光、显影以及开窗,以露出金属基板背面后续需要进行化学蚀刻的图形区域, Use exposure and development equipment to perform graphic exposure, development and window opening on the green paint coated on the back of the metal substrate to expose the pattern area on the back of the metal substrate that needs to be chemically etched later.

步骤十九、化学蚀刻 Step 19. Chemical Etching

将步骤十八中金属基板背面完成开窗的图形区域进行化学蚀刻,  Perform chemical etching on the graphic area where the windows are opened on the back of the metal substrate in step 18,

步骤二十、电镀金属线路层 Step 20, electroplating metal circuit layer

在步骤十九完成化学蚀刻后露出的惰性金属线路层表面进行金属线路层的电镀,金属线路层电镀完成后即在金属基板背面相对形成引脚或基岛和引脚的下部,  Electroplating the metal circuit layer on the surface of the inert metal circuit layer exposed after the chemical etching is completed in step nineteen, after the completion of the electroplating of the metal circuit layer, the pin or base island and the lower part of the pin are relatively formed on the back of the metal substrate,

步骤二十一、绿漆披覆 Step 21, green paint coating

在步骤二十完成电镀金属线路层的金属基板背面进行绿漆的被覆, In step 20, the backside of the metal substrate on which the electroplating metal circuit layer is completed is covered with green paint,

步骤二十二、绿漆表面开孔 Step 22. Open holes on the surface of the green paint

在步骤二十一金属基板背面披覆的绿漆表面进行后续要植金属球区域的开孔作业,  On the surface of the green paint coated on the back of the metal substrate in step 21, carry out the subsequent drilling work in the area where the metal balls will be planted,

步骤二十三、清洗 Step twenty-three, cleaning

对步骤二十二金属基板背面绿漆开孔处进行清洗 Clean the opening of the green paint on the back of the metal substrate in step 22

步骤二十四、植球 Step twenty-four, planting the ball

在步骤二十三经过清洗的小孔内植入金属球,  Insert a metal ball into the cleaned hole in step 23,

步骤二十五、切割成品 Step 25. Cut the finished product

将步骤二十四完成植球的半成品进行切割作业,使原本以阵列式集合体方式集成在一起并含有芯片的塑封体模块一颗颗切割独立开来,制得芯片倒装单面三维线路先封后蚀封装结构成品。 Cut the semi-finished products that have been ball-planted in step 24, so that the plastic-encapsulated modules that were originally integrated in the form of an array assembly and contain chips are cut and separated one by one, and the flip-chip single-sided three-dimensional circuit is obtained. After sealing, etch the finished package structure.

一种芯片倒装单面三维线路先封后蚀制造方法的封装结构,它包括基岛、引脚和芯片,所述芯片倒装于基岛和引脚正面,所述芯片底部与基岛和引脚正面之间设置有底部填充胶,所述基岛外围的区域、基岛和引脚之间的区域、引脚与引脚之间的区域以及基岛和引脚下部的区域包封有绿漆,所述基岛和引脚上部的区域以及芯片外包封有塑封料,所述引脚下部的绿漆表面上开设有小孔,所述小孔与引脚背面相连通,所述小孔内设置有金属球,所述金属球与引脚背面相接触。 A packaging structure of a chip flip-chip single-sided three-dimensional circuit first sealing and then etching manufacturing method, which includes a base island, pins and chips, the chip is flip-chip on the base island and the front of the pins, the bottom of the chip is connected to the base island and the An underfill glue is provided between the front faces of the pins, and the area around the base island, the area between the base island and the pins, the area between the pins, and the area under the base island and the pins are encapsulated with Green paint, the area of the base island and the upper part of the pins and the outside of the chip are encapsulated with a plastic compound, the surface of the green paint at the lower part of the pins is provided with small holes, and the small holes communicate with the back of the pins. A metal ball is arranged in the hole, and the metal ball is in contact with the back of the pin.

所述步骤二十三对金属基板背面绿漆开孔处进行清洗同时进行金属保护层被覆。 The step 23 cleans the openings of the green paint on the back of the metal substrate and covers the metal protective layer at the same time.

所述封装结构包括基岛,此时芯片倒装基岛和引脚正面,所述芯片底部与基岛正面和引脚正面之间设置有底部填充胶。 The packaging structure includes a base island. At this time, the chip is flipped on the base island and the front side of the pins, and an underfill glue is arranged between the bottom of the chip, the front side of the base island, and the front side of the pins.

所述基岛有单个或多个。  There are single or multiple base islands. the

与现有技术相比,本发明具有以下有益效果: Compared with the prior art, the present invention has the following beneficial effects:

1、本发明不需要使用玻璃纤维层,所以可以减少玻璃纤维层所带来的成本; 1. The present invention does not need to use the glass fiber layer, so the cost brought by the glass fiber layer can be reduced;

2、本发明没有使用玻璃纤维层的发泡物质,所以可靠性的等级可以再提高,相对对封装体的安全性就会提高; 2. The present invention does not use the foaming material of the glass fiber layer, so the reliability level can be further improved, and the relative safety of the package will be improved;

3、本发明不需要使用玻璃纤维层物质,所以就可以减少玻璃纤维材料所带来的环境污染; 3. The present invention does not need to use glass fiber material, so the environmental pollution caused by glass fiber material can be reduced;

4、本发明的三维金属基板线路层所采用的是电镀方法,而电镀层的总厚度约在10~15μm,而线路与线路之间的间隙可以轻松的达到25μm以下的间隙,所以可以真正地做到高密度内引脚线路平铺的技术能力; 4. The circuit layer of the three-dimensional metal substrate of the present invention adopts the electroplating method, and the total thickness of the electroplating layer is about 10-15 μm, and the gap between the lines can easily reach a gap below 25 μm, so it can be truly The technical ability to achieve high-density internal pin line tiling;

5、本发明的三维金属基板因采用的是金属层电镀法,所以比玻璃纤维高压铜箔金属层的工艺来得简单,且不会有金属层因为高压产生金属层不平整、金属层破损以及金属层延展移位的不良或困惑; 5. The three-dimensional metal substrate of the present invention adopts the metal layer electroplating method, so it is simpler than the process of glass fiber high-voltage copper foil metal layer, and there will be no metal layer unevenness, metal layer damage and metal layer due to high pressure. Poor or confused layer extension and displacement;

6、本发明的三维金属基板线路层是在金属基材的表面进行金属电镀,所以材质特性基本相同,所以镀层线路与金属基材的内应力基本相同,可以轻松的进行恶劣环境的后工程(如高温共晶装片、高温锡材焊料装片以及高温被动元件的表面贴装工作)而不容易产生应力变形。 6. The three-dimensional metal substrate circuit layer of the present invention is metal electroplated on the surface of the metal substrate, so the material properties are basically the same, so the internal stress of the plating circuit and the metal substrate is basically the same, and the post-engineering in harsh environments can be easily carried out ( Such as high-temperature eutectic chip mounting, high-temperature tin solder chip mounting, and surface mount work of high-temperature passive components) are not prone to stress deformation.

附图说明 Description of drawings

图1~图25为本发明芯片倒装单面三维线路先封后蚀制造方法实施例一的各工序示意图。 1 to 25 are schematic diagrams of each process in Embodiment 1 of the manufacturing method for flip-chip single-sided three-dimensional circuit of the present invention, which is sealed first and then etched.

图26为本发明芯片倒装单面三维线路先封后蚀封装结构实施例一的结构示意图。 Fig. 26 is a structural schematic diagram of Embodiment 1 of the flip-chip single-sided three-dimensional circuit packaging structure of the present invention, which is sealed first and then etched.

图27~图51为本发明芯片倒装单面三维线路先封后蚀制造方法实施例二的各工序示意图。 27 to 51 are schematic diagrams of each process in Embodiment 2 of the manufacturing method for flip-chip single-sided three-dimensional circuit of the present invention, which is sealed first and then etched.

图52为本发明芯片倒装单面三维线路先封后蚀封装结构实施例二的结构示意图。 Fig. 52 is a structural schematic diagram of Embodiment 2 of the flip-chip single-sided three-dimensional circuit packaging structure of the present invention, which is sealed first and then etched.

图53~图64为传统的高密度基板封装结构的制造工艺流程的各工序示意图。 53 to 64 are schematic diagrams of each process of the manufacturing process flow of the traditional high-density substrate packaging structure.

图65为玻璃纤维表面铜箔金属层的蚀刻状况示意图。 Fig. 65 is a schematic diagram of the etching status of the copper foil metal layer on the surface of the glass fiber.

其中: in:

金属基板1 Metal Substrate 1

铜材薄膜2 Copper film 2

绿漆3 Green paint 3

惰性金属线路层4 Inert metal wiring layer 4

金属线路层5 metal line layer 5

线路网板6 Circuit board 6

金属化前处理层7 Metallization pretreatment layer 7

芯片8 chip 8

底部填充胶9 Underfill 9

塑封料10 Plastic compound 10

小孔11 Small hole 11

金属保护层12 Metal protection layer 12

金属球13 metal ball 13

引脚14 pin 14

基岛15。 Key Island 15.

具体实施方式 Detailed ways

本发明芯片倒装单面三维线路先封后蚀制造方法包括以下工艺步骤: The manufacturing method of the chip flip-chip single-sided three-dimensional circuit of the present invention is sealed first and then etched, including the following process steps:

实施例一、无基岛 Embodiment 1, no base island

步骤一、取金属基板 Step 1. Take the metal substrate

参见图1,取一片厚度合适的金属基板,所述金属基板的材质可以依据芯片的功能与特性进行变换,例如:铜材、铁材、镍铁材或锌铁材等; Referring to Figure 1, take a metal substrate with a suitable thickness. The material of the metal substrate can be changed according to the functions and characteristics of the chip, for example: copper, iron, nickel-iron or zinc-iron;

步骤二、金属基板表面预镀铜材 Step 2. Pre-plating copper on the surface of the metal substrate

参见图2,在金属基板表面电镀一层铜材薄膜,目的是为后续电镀作基础,所述电镀的方式可以采用化学镀或是电解电镀; Referring to Figure 2, a layer of copper film is electroplated on the surface of the metal substrate, the purpose is to serve as the basis for subsequent electroplating, and the electroplating method can be electroless plating or electrolytic plating;

步骤三、绿漆披覆 Step 3, green paint coating

参见图3,在步骤二完成预镀铜材薄膜的金属基板正面及背面进行绿漆的被覆,以保护后续的电镀金属层工艺作业; Referring to Figure 3, in step 2, the front and back of the metal substrate of the pre-plated copper film are covered with green paint to protect the subsequent electroplating metal layer process operations;

步骤四、金属基板正面去除部分绿漆 Step 4. Remove part of the green paint from the front of the metal substrate

参见图4,利用曝光显影设备在步骤三完成绿漆披覆的金属基板正面进行图形曝光、显影以及开窗,以露出金属基板正面后续需要进行电镀的图形区域; Referring to Figure 4, use the exposure and development equipment to complete the pattern exposure, development and window opening on the front of the metal substrate coated with green paint in step 3, so as to expose the pattern area that needs to be electroplated on the front of the metal substrate;

步骤五、电镀惰性金属线路层 Step 5. Electroplating inert metal circuit layer

参见图5,将步骤四金属基板正面已完成开窗的图形区域电镀上惰性金属线路层,作为后续蚀刻作业的阻挡层,所述惰性金属线路层材料采用镍、钛或铜等,所述电镀方式采用化学镀或电解电镀方式; Referring to Fig. 5, an inert metal circuit layer is electroplated on the graphic area where the window has been opened on the front side of the metal substrate in step four, as a barrier layer for subsequent etching operations. The material of the inert metal circuit layer is nickel, titanium or copper, etc., and the electroplating The method adopts chemical plating or electrolytic plating;

步骤六、电镀金属线路层 Step 6. Plating metal circuit layer

参见图6,在步骤五中的惰性金属线路层表面镀上金属线路层,所述金属线路层可以是单层或多层,所述金属线路层材料采用银、铝、铜、镍金或镍钯金等,所述电镀方式可以是化学电镀也可以是电解电镀的方式; Referring to Fig. 6, a metal circuit layer is plated on the surface of the inert metal circuit layer in step five, and the metal circuit layer can be single-layer or multilayer, and the material of the metal circuit layer is silver, aluminum, copper, nickel gold or nickel Palladium, gold, etc., the electroplating method can be chemical plating or electrolytic plating;

步骤七、绿漆披覆 Step 7. Green paint coating

参见图7,在步骤六完成电镀金属线路层的金属基板正面再次进行绿漆的被覆,以保护后续的电镀金属层工艺作业; Referring to Fig. 7, in step 6, the front of the metal substrate of the electroplated metal circuit layer is covered with green paint again to protect the subsequent electroplating metal layer process operations;

步骤八、金属基板正面去除部分绿漆 Step 8. Remove part of the green paint from the front of the metal substrate

参见图8,利用曝光显影设备在步骤七完成绿漆披覆的金属基板正面进行图形曝光、显影以及开窗,以露出金属基板正面后续需要进行电镀的图形区域; Referring to Figure 8, use the exposure and development equipment to complete the pattern exposure, development and window opening on the front of the metal substrate coated with green paint in step 7, so as to expose the pattern area that needs to be electroplated on the front of the metal substrate;

步骤九、电镀金属线路层 Step 9. Plating metal circuit layer

参见图9,将步骤八金属基板正面已完成开窗的图形区域电镀上金属线路层,所述金属线路层可以是单层或多层,所述金属线路层材料采用银、铝、铜、镍金或镍钯金等,所述电镀方式可以是化学电镀也可以是电解电镀的方式; Referring to Fig. 9, the metal circuit layer is electroplated on the graphic area where the window has been opened on the front side of the metal substrate in step eight. The metal circuit layer can be a single layer or multiple layers, and the metal circuit layer material is silver, aluminum, copper, nickel Gold or nickel-palladium-gold, etc., the electroplating method can be chemical electroplating or electrolytic electroplating;

步骤十、绿漆披覆 Step 10. Green paint coating

参见图10,在步骤九完成电镀金属线路层的金属基板正面再次进行绿漆的被覆,以保护后续的电镀金属层工艺作业; Referring to FIG. 10 , in step 9, the front side of the metal substrate on which the electroplating metal circuit layer is completed is coated with green paint again to protect the subsequent electroplating metal layer process operations;

步骤十一、金属基板正面去除部分绿漆 Step 11. Remove part of the green paint from the front of the metal substrate

参见图11,利用曝光显影设备在步骤十完成绿漆披覆的金属基板正面进行图形曝光、显影以及开窗,以露出金属基板正面后续需要进行电镀的图形区域; Referring to Fig. 11, use the exposure and development equipment to perform pattern exposure, development and window opening on the front of the metal substrate coated with green paint in step ten, so as to expose the pattern area that needs to be electroplated on the front of the metal substrate;

步骤十二、覆上线路网板 Step 12. Cover the circuit board

参见图12,在金属基板正面覆上线路网板,线路网板覆盖后续不需要进行金属化的区域; Referring to Figure 12, the front of the metal substrate is covered with a circuit board, and the circuit board covers the area that does not need to be metallized in the future;

步骤十三、金属化前处理 Step 13, pre-metallization treatment

参见图13,对步骤十一金属基板正面已完成开窗的图形区域进行电镀金属线路层的金属化前处理,所述金属化前处理方式可采用涂布、喷洒、印刷、淋涂或浸泡等方式; Referring to Figure 13, perform metallization pre-treatment on the metallization circuit layer of the electroplated metal circuit layer on the graphics area on the front of the metal substrate in step 11. The pre-metallization method can be coating, spraying, printing, shower coating or immersion Way;

步骤十四、移除线路网板 Step 14. Remove the circuit board

参见图14,将步骤十二中金属基板正面覆上的线路网板移除; Referring to Figure 14, remove the circuit board covered on the front side of the metal substrate in step 12;

步骤十五、电镀金属线路层 Step 15. Electroplating the metal circuit layer

参见图15,将步骤十三金属基板正面完成电镀金属线路层前处理的区域电镀上金属线路层,所述金属线路层电镀完成后即在金属基板正面相对形成引脚的上部,所述金属线路层可以是单层或多层,所述金属线路层材料采用银、铝、铜、镍金或镍钯金等,所述电镀方式可以是化学电镀也可以是电解电镀的方式; Referring to Fig. 15, the metal circuit layer is electroplated on the area where the metal circuit layer pretreatment is completed on the front side of the metal substrate in step 13. After the metal circuit layer is electroplated, the upper part of the pin is relatively formed on the front side of the metal substrate. The metal circuit layer The layer can be single-layer or multi-layer, and the material of the metal circuit layer is silver, aluminum, copper, nickel-gold or nickel-palladium-gold, etc. The electroplating method can be chemical electroplating or electrolytic electroplating;

步骤十六、装片及芯片底部填充 Step 16, chip loading and chip bottom filling

参见图16,在步骤十五相对形成的引脚的上部正面倒装上芯片及芯片底部填充环氧树脂; Referring to Fig. 16, the chip is flip-chip mounted on the upper side of the oppositely formed pins in step fifteen and the bottom of the chip is filled with epoxy resin;

步骤十七、包封 Step seventeen, encapsulation

参见图17,将步骤十六完成芯片倒装及芯片底部填充后的金属基板正面进行包封塑封料作业,塑封料的包封方式可以采用模具灌胶方式、喷涂方式或刷胶方式,所述塑封料可以采用有填料物质或是无填料物质的环氧树脂; Referring to Figure 17, encapsulate the front of the metal substrate after chip flipping and chip bottom filling in step 16. The encapsulation method of the plastic compound can be mold filling, spraying or brushing. The molding compound can be epoxy resin with filler or no filler;

步骤十八、金属基板背面去除部分绿漆 Step 18. Remove part of the green paint on the back of the metal substrate

参见图18,利用曝光显影设备对金属基板背面披覆的绿漆进行图形曝光、显影以及开窗,以露出金属基板背面后续需要进行化学蚀刻的图形区域; Referring to Fig. 18, the green paint coated on the back of the metal substrate is exposed, developed and opened with an exposure and developing device to expose the graphic area that needs to be subsequently chemically etched on the back of the metal substrate;

步骤十九、化学蚀刻 Step 19. Chemical Etching

参见图19,将步骤十八中金属基板背面完成开窗的图形区域进行化学蚀刻,化学蚀刻直至惰性金属线路层的位置为止,蚀刻药水可以采用氯化铜或是氯化铁; Referring to Figure 19, perform chemical etching on the graphic area where the window is opened on the back of the metal substrate in step 18, until the position of the inert metal circuit layer is chemically etched, and the etching solution can be copper chloride or ferric chloride;

步骤二十、电镀金属线路层 Step 20, electroplating metal circuit layer

参见图20,在步骤十九完成化学蚀刻后露出的惰性金属线路层表面进行金属线路层的电镀,金属线路层电镀完成后即在金属基板背面相对形成引脚的下部,所述金属线路层可以是单层或多层,所述金属线路层材料采用铜镍金、铜镍银、钯金、金或铜等,所述电镀方法可以是化学电镀或是电解电镀; Referring to FIG. 20 , the surface of the inert metal circuit layer exposed after the chemical etching in step nineteen is electroplated on the metal circuit layer. After the metal circuit layer is electroplated, the lower part of the pin is relatively formed on the back of the metal substrate. The metal circuit layer can be It is single-layer or multi-layer, and the material of the metal circuit layer is copper-nickel-gold, copper-nickel-silver, palladium-gold, gold or copper, and the electroplating method can be chemical electroplating or electrolytic electroplating;

步骤二十一、绿漆披覆 Step 21, green paint coating

参见图21,在步骤二十完成电镀金属线路层的金属基板背面进行绿漆的被覆; Referring to FIG. 21 , in step 20, the backside of the metal substrate of the electroplated metal circuit layer is covered with green paint;

步骤二十二、绿漆表面开孔 Step 22. Open holes on the surface of the green paint

参见图22,在步骤二十一金属基板背面披覆的绿漆表面进行后续要植金属球区域的开孔作业,所述开孔方式可以采用干式激光烧结或是湿式化学腐蚀的方法; Referring to FIG. 22 , in step 21, the green paint surface coated on the back of the metal substrate is followed by opening operations in the area where metal balls are to be planted. The opening method can be dry laser sintering or wet chemical etching;

步骤二十三、清洗 Step twenty-three, cleaning

参见图23,对步骤二十二金属基板背面绿漆开孔处进行清洗以去除氧化物质或有机物质等,同时可进行金属保护层的被覆,金属保护层采用抗氧化剂; Referring to Figure 23, clean the opening of the green paint on the back of the metal substrate in step 22 to remove oxidized substances or organic substances, and at the same time coat the metal protective layer, which uses an antioxidant;

步骤二十四、植球 Step twenty-four, planting the ball

参见图24,在步骤二十三经过清洗的小孔内植入金属球,金属球与引脚的背面相接触,所述植球方式可以采用常规的植球机或是采用金属膏印刷再经高温溶解之后即可形成球状体,金属球的材料可以是纯锡或锡合金; Referring to Figure 24, metal balls are implanted in the cleaned small holes in step 23, and the metal balls are in contact with the back of the pins. The ball planting method can be a conventional ball planting machine or a metal paste printing process. Spheroids can be formed after high-temperature dissolution, and the material of the metal balls can be pure tin or tin alloy;

步骤二十五、切割成品 Step 25. Cut the finished product

参见图25,将步骤二十四完成植球的半成品进行切割作业,使原本以阵列式集合体方式集成在一起并含有芯片的塑封体模块一颗颗切割独立开来,制得芯片倒装单面三维线路先封后蚀封装结构成品。 Referring to Figure 25, the semi-finished product that has completed the ball planting in step 24 is cut, so that the plastic package modules that are originally integrated in an array assembly and contain chips are cut and separated one by one, and the chip flip chip is obtained. The surface three-dimensional circuit is first sealed and then etched into the finished package structure.

实施例一的封装结构如下: The packaging structure of Embodiment 1 is as follows:

参见图26,本发明芯片倒装单面三维线路先封后蚀封装结构,它包括引脚14和芯片8,所述芯片8倒装于引脚14正面,所述芯片8底部与引脚14正面之间设置有底部填充胶9,所述引脚14外围的区域、引脚14与引脚14之间的区域以及引脚14下部的区域包封有绿漆3,所述引脚14上部的区域以及芯片8包封有塑封料10,所述引脚14下部的绿漆3表面上开设有小孔11,所述小孔11与引脚14背面相连通,所述小孔11内设置有金属球13,所述金属球13与引脚14背面相接触,所述金属球13与引脚14背面之间设置有金属保护层12,所述金属保护层12为抗氧化剂。 Referring to Fig. 26, the chip flip-chip single-sided three-dimensional circuit packaging structure of the present invention is first sealed and then etched. It includes pins 14 and chips 8. The chip 8 is flip-chip on the front of the pins 14, and the bottom of the chip 8 is connected to the pins 14. Underfill glue 9 is provided between the fronts, the area around the pins 14, the area between the pins 14 and the pins 14, and the area below the pins 14 are encapsulated with green paint 3, the upper part of the pins 14 The area and the chip 8 are encapsulated with a plastic encapsulant 10, and a small hole 11 is opened on the surface of the green paint 3 at the bottom of the pin 14, and the small hole 11 communicates with the back of the pin 14, and the small hole 11 is set There is a metal ball 13, the metal ball 13 is in contact with the back of the pin 14, and a metal protective layer 12 is arranged between the metal ball 13 and the back of the pin 14, and the metal protective layer 12 is an antioxidant.

实施例二、有基岛 Embodiment 2, there is base island

步骤一、取金属基板 Step 1. Take the metal substrate

参见图27,取一片厚度合适的金属基板,所述金属基板的材质可以依据芯片的功能与特性进行变换,例如:铜材、铁材、镍铁材或锌铁材等; Referring to Figure 27, take a metal substrate with a suitable thickness. The material of the metal substrate can be changed according to the functions and characteristics of the chip, for example: copper, iron, nickel-iron or zinc-iron;

步骤二、金属基板表面预镀铜材 Step 2. Pre-plating copper on the surface of the metal substrate

参见图28,在金属基板表面电镀一层铜材薄膜,目的是为后续电镀作基础,所述电镀的方式可以采用化学镀或是电解电镀; Referring to Figure 28, a layer of copper film is electroplated on the surface of the metal substrate, the purpose is to serve as the basis for subsequent electroplating, and the electroplating method can be electroless plating or electrolytic plating;

步骤三、绿漆披覆 Step 3, green paint coating

参见图29,在步骤二完成预镀铜材薄膜的金属基板正面及背面进行绿漆的被覆,以保护后续的电镀金属层工艺作业; Referring to Figure 29, in step 2, the front and back of the metal substrate of the pre-plated copper film are covered with green paint to protect the subsequent electroplating metal layer process operations;

步骤四、金属基板正面去除部分绿漆 Step 4. Remove part of the green paint from the front of the metal substrate

参见图30,利用曝光显影设备在步骤三完成绿漆披覆的金属基板正面进行图形曝光、显影以及开窗,以露出金属基板正面后续需要进行电镀的图形区域; Referring to Fig. 30, use the exposure and development equipment to complete the pattern exposure, development and window opening on the front of the metal substrate coated with green paint in step 3, so as to expose the pattern area that needs to be electroplated on the front of the metal substrate;

步骤五、电镀惰性金属线路层 Step 5. Electroplating inert metal circuit layer

参见图31,将步骤四金属基板正面已完成开窗的图形区域电镀上惰性金属线路层,作为后续蚀刻作业的阻挡层,所述惰性金属线路层材料采用镍、钛或铜等,所述电镀方式采用化学镀或电解电镀方式; Referring to FIG. 31 , electroplating an inert metal circuit layer on the graphic area of the front of the metal substrate in step 4 where windows have been opened is used as a barrier layer for subsequent etching operations. The material of the inert metal circuit layer is nickel, titanium or copper, etc., and the electroplating The method adopts chemical plating or electrolytic plating;

步骤六、电镀金属线路层 Step 6. Plating metal circuit layer

参见图32,在步骤五中的惰性金属线路层表面镀上金属线路层,所述金属线路层可以是单层或多层,所述金属线路层材料采用银、铝、铜、镍金或镍钯金等,所述电镀方式可以是化学电镀也可以是电解电镀的方式; Referring to Fig. 32, a metal circuit layer is plated on the surface of the inert metal circuit layer in step five, and the metal circuit layer can be a single layer or multiple layers, and the material of the metal circuit layer is silver, aluminum, copper, nickel gold or nickel Palladium, gold, etc., the electroplating method can be chemical plating or electrolytic plating;

步骤七、绿漆披覆 Step 7. Green paint coating

参见图33,在步骤六完成电镀金属线路层的金属基板正面再次进行绿漆的被覆,以保护后续的电镀金属层工艺作业; Referring to FIG. 33 , in step six, the front of the metal substrate on which the electroplating metal circuit layer is completed is coated with green paint again to protect the subsequent electroplating metal layer process operations;

步骤八、金属基板正面去除部分绿漆 Step 8. Remove part of the green paint from the front of the metal substrate

参见图34,利用曝光显影设备在步骤七完成绿漆披覆的金属基板正面进行图形曝光、显影以及开窗,以露出金属基板正面后续需要进行电镀的图形区域; Referring to Figure 34, use the exposure and development equipment to complete the pattern exposure, development and window opening on the front of the metal substrate coated with green paint in step 7, so as to expose the pattern area that needs to be electroplated on the front of the metal substrate;

步骤九、电镀金属线路层 Step 9. Plating metal circuit layer

参见图35,将步骤八金属基板正面已完成开窗的图形区域电镀上金属线路层,所述金属线路层可以是单层或多层,所述金属线路层材料采用银、铝、铜、镍金或镍钯金等,所述电镀方式可以是化学电镀也可以是电解电镀的方式; Referring to Figure 35, electroplate the metal circuit layer on the graphic area where the window has been opened on the front side of the metal substrate in step eight. The metal circuit layer can be single-layer or multi-layer, and the material of the metal circuit layer is silver, aluminum, copper, nickel Gold or nickel-palladium-gold, etc., the electroplating method can be chemical electroplating or electrolytic electroplating;

步骤十、绿漆披覆 Step 10. Green paint coating

参见图36,在步骤九完成电镀金属线路层的金属基板正面再次进行绿漆的被覆,以保护后续的电镀金属层工艺作业; Referring to FIG. 36 , in step 9, the front side of the metal substrate on which the electroplating metal circuit layer is completed is coated with green paint again to protect the subsequent electroplating metal layer process operations;

步骤十一、金属基板正面去除部分绿漆 Step 11. Remove part of the green paint from the front of the metal substrate

参见图37,利用曝光显影设备在步骤十完成绿漆披覆的金属基板正面进行图形曝光、显影以及开窗,以露出金属基板正面后续需要进行电镀的图形区域; Referring to Fig. 37, use the exposure and development equipment to perform pattern exposure, development and window opening on the front of the metal substrate covered with green paint in step ten, so as to expose the pattern area that needs to be electroplated on the front of the metal substrate;

步骤十二、覆上线路网板 Step 12. Cover the circuit board

参见图38,在金属基板正面覆上线路网板,线路网板覆盖后续不需要进行金属化的区域; Referring to Figure 38, the front of the metal substrate is covered with a circuit screen, and the circuit screen covers the area that does not need to be metallized in the future;

步骤十三、金属化前处理 Step 13, pre-metallization treatment

参见图39,对步骤十一金属基板正面已完成开窗的图形区域进行电镀金属线路层的金属化前处理,所述金属化前处理方式可采用涂布、喷洒、印刷、淋涂或浸泡等方式; Referring to Figure 39, perform metallization pre-treatment on the pattern area of the metal substrate on which the window has been opened on the front side of the metal substrate in step 11. The metallization pre-treatment method can be coating, spraying, printing, shower coating or immersion, etc. Way;

步骤十四、移除线路网板 Step 14. Remove the circuit board

参见图40,将步骤十二中金属基板正面覆上的线路网板移除; Referring to Figure 40, remove the circuit board covered on the front side of the metal substrate in step 12;

步骤十五、电镀金属线路层 Step 15. Electroplating the metal circuit layer

参见图41,将步骤十三金属基板正面完成电镀金属线路层前处理的区域电镀上金属线路层,所述金属线路层电镀完成后即在金属基板正面相对形成基岛或引脚的上部,所述金属线路层可以是单层或多层,所述金属线路层材料采用银、铝、铜、镍金或镍钯金等,所述电镀方式可以是化学电镀也可以是电解电镀的方式; Referring to FIG. 41 , the metal circuit layer is electroplated on the area where the metal circuit layer pretreatment is completed on the front of the metal substrate in step 13. After the metal circuit layer is electroplated, the base island or the upper part of the pin is relatively formed on the front of the metal substrate. The metal circuit layer can be single-layer or multi-layer, and the material of the metal circuit layer is silver, aluminum, copper, nickel-gold or nickel-palladium-gold, etc. The electroplating method can be chemical electroplating or electrolytic electroplating;

步骤十六、装片及芯片底部填充 Step 16, chip loading and chip bottom filling

参见图42,在步骤十五相对形成的基岛和引脚的上部正面倒装上芯片及芯片底部填充环氧树脂; Referring to FIG. 42 , in step 15, the base island and the upper part of the pins are oppositely formed to flip-chip the chip and fill the bottom of the chip with epoxy resin;

步骤十七、包封 Step seventeen, encapsulation

参见图43,将步骤十六完成芯片倒装及芯片底部填充后的金属基板正面进行包封塑封料作业,塑封料的包封方式可以采用模具灌胶方式、喷涂方式或刷胶方式,所述塑封料可以采用有填料物质或是无填料物质的环氧树脂; Referring to Figure 43, encapsulate the front of the metal substrate after chip flip-chip and chip bottom filling in Step 16. The encapsulation method of the plastic compound can be mold filling, spraying or brushing. The molding compound can be epoxy resin with filler or no filler;

步骤十八、金属基板背面去除部分绿漆 Step 18. Remove part of the green paint on the back of the metal substrate

参见图44,利用曝光显影设备对金属基板背面披覆的绿漆进行图形曝光、显影以及开窗,以露出金属基板背面后续需要进行化学蚀刻的图形区域; Referring to Fig. 44, the green paint coated on the back of the metal substrate is exposed, developed, and opened with an exposure and developing device to expose the pattern area that needs to be subsequently chemically etched on the back of the metal substrate;

步骤十九、化学蚀刻 Step 19. Chemical Etching

参见图45,将步骤十八中金属基板背面完成开窗的图形区域进行化学蚀刻,化学蚀刻直至惰性金属线路层的位置为止,蚀刻药水可以采用氯化铜或是氯化铁; Referring to Figure 45, chemically etch the graphic area where the window is opened on the back of the metal substrate in step 18 until the position of the inert metal circuit layer is chemically etched. The etching solution can be copper chloride or ferric chloride;

步骤二十、电镀金属线路层 Step 20, electroplating metal circuit layer

参见图46,在步骤十九完成化学蚀刻后露出的惰性金属线路层表面进行金属线路层的电镀,金属线路层电镀完成后即在金属基板背面相对形成基岛或引脚的下部,所述金属线路层可以是单层或多层,所述金属线路层材料采用铜镍金、铜镍银、钯金、金或铜等,所述电镀方法可以是化学电镀或是电解电镀; Referring to FIG. 46, the surface of the inert metal circuit layer exposed after the chemical etching in step nineteen is subjected to electroplating of the metal circuit layer. After the electroplating of the metal circuit layer is completed, the base island or the lower part of the pin is relatively formed on the back of the metal substrate. The circuit layer can be single-layer or multi-layer, and the material of the metal circuit layer is copper-nickel-gold, copper-nickel-silver, palladium-gold, gold or copper, etc., and the electroplating method can be electroless plating or electrolytic plating;

步骤二十一、绿漆披覆 Step 21, green paint coating

参见图47,在步骤二十完成电镀金属线路层的金属基板背面进行绿漆的被覆; Referring to FIG. 47 , in step 20, the backside of the metal substrate on which the electroplated metal circuit layer is completed is coated with green paint;

步骤二十二、绿漆表面开孔 Step 22. Open holes on the surface of the green paint

参见图48,在步骤二十一金属基板背面披覆的绿漆表面进行后续要植金属球区域的开孔作业,所述开孔方式可以采用干式激光烧结或是湿式化学腐蚀的方法; Referring to Fig. 48, on the surface of the green paint coated on the back of the metal substrate in step 21, the subsequent opening operation of the area to be planted with metal balls is performed. The opening method can be dry laser sintering or wet chemical etching;

步骤二十三、清洗 Step twenty-three, cleaning

参见图49,对步骤二十二金属基板背面绿漆开孔处进行清洗以去除氧化物质或有机物质等,同时可进行金属保护层的被覆,金属保护层采用抗氧化剂; Referring to Figure 49, clean the openings of the green paint on the back of the metal substrate in step 22 to remove oxidized substances or organic substances, etc., and at the same time coat the metal protective layer, which uses an antioxidant;

步骤二十四、植球 Step twenty-four, planting the ball

参见图50,在步骤二十三经过清洗的小孔内植入金属球,金属球与引脚的背面相接触,所述植球方式可以采用常规的植球机或是采用金属膏印刷再经高温溶解之后即可形成球状体,金属球的材料可以是纯锡或锡合金; Referring to Figure 50, metal balls are implanted in the cleaned holes in step 23, and the metal balls are in contact with the back of the pins. The ball planting method can be a conventional ball planting machine or a metal paste printing process. Spheroids can be formed after high-temperature dissolution, and the material of the metal balls can be pure tin or tin alloy;

步骤二十五、切割成品 Step 25. Cut the finished product

参见图51,将步骤二十四完成植球的半成品进行切割作业,使原本以阵列式集合体方式集成在一起并含有芯片的塑封体模块一颗颗切割独立开来,制得芯片倒装单面三维线路先封后蚀封装结构成品。 Referring to Figure 51, the semi-finished products that have been ball-planted in step 24 are cut, so that the plastic package modules that are originally integrated in the form of an array assembly and contain chips are cut and separated one by one, and the chip flip chip is obtained. The surface three-dimensional circuit is first sealed and then etched into the finished package structure.

实施例二的封装结构如下: The packaging structure of the second embodiment is as follows:

参见图52,本发明芯片倒装单面三维线路先封后蚀封装结构,它包括基岛15、引脚14和芯片8,所述芯片8倒装于基岛15和引脚14正面,所述芯片8底部与基岛15和引脚14正面之间设置有底部填充胶9,所述基岛15外围的区域、基岛15和引脚14之间的区域、引脚14与引脚14之间的区域以及基岛15和引脚14下部的区域包封有绿漆3,所述基岛15和引脚14上部的区域以及芯片8外包封有塑封料10,所述引脚14下部的绿漆3表面上开设有小孔11,所述小孔11与引脚14背面相连通,所述小孔11内设置有金属球13,所述金属球13与引脚14背面相接触,所述金属球13与引脚14背面之间设置有金属保护层12,所述金属保护层12为抗氧化剂。 Referring to Fig. 52, the chip flip-chip single-sided three-dimensional circuit packaging structure of the present invention is first sealed and then etched, which includes a base island 15, pins 14 and chips 8, and the chip 8 is flip-chip on the front of the base island 15 and pins 14, so Underfill glue 9 is provided between the bottom of the chip 8 and the front of the base island 15 and the pin 14, the area around the base island 15, the area between the base island 15 and the pin 14, the pin 14 and the pin 14 The area between the base island 15 and the lower part of the pin 14 is encapsulated with green paint 3, the area on the base island 15 and the upper part of the pin 14 and the chip 8 are encapsulated with a plastic encapsulant 10, and the lower part of the pin 14 A small hole 11 is provided on the surface of the green paint 3, and the small hole 11 communicates with the back of the pin 14, and a metal ball 13 is arranged in the small hole 11, and the metal ball 13 is in contact with the back of the pin 14, A metal protection layer 12 is provided between the metal ball 13 and the back of the pin 14, and the metal protection layer 12 is an antioxidant.

Claims (5)

1. the three-dimensional circuit of the flip-chip single face erosion manufacturing approach of being honored as a queen earlier is characterized in that said method comprises following processing step:
Step 1, get metal substrate
Step 2, metallic substrate surfaces preplating copper material
Electroplate one deck copper material film in metallic substrate surfaces,
Step 3, green lacquer coating
Accomplish the metal substrate front and the back side of preplating copper material film in step 2 and carry out the lining of green lacquer,
Step 4, the positive green lacquer of part of removing of metal substrate
Utilize exposure imaging equipment to carry out graph exposure, develop and window, to expose the graphics field that the positive follow-up needs of metal substrate are electroplated in the metal substrate front that step 3 is accomplished green lacquer coating;
Step 5, plating inert metal line layer
The graphics field of windowing has been accomplished in step 4 metal substrate front has electroplated upward inert metal line layer,
Step 6, plated metal line layer
Inert metal line layer surface metal plated line layer in step 5,
Step 7, green lacquer coating
Accomplish the metal substrate front of plated metal line layer in step 6 and carry out the lining of green lacquer once more,
Step 8, the positive green lacquer of part of removing of metal substrate
Utilize exposure imaging equipment to carry out graph exposure, develop and window in the metal substrate front that step 7 is accomplished green lacquer coating, exposing the graphics field that the positive follow-up needs of metal substrate are electroplated,
Step 9, plated metal line layer
The graphics field of windowing has been accomplished in step 8 metal substrate front has electroplated upward metallic circuit layer,
Step 10, green lacquer coating
Accomplish the metal substrate front of plated metal line layer in step 9 and carry out the lining of green lacquer once more,
Step 11, the positive green lacquer of part of removing of metal substrate
Utilize exposure imaging equipment to carry out graph exposure, develop and window in the metal substrate front that step 10 is accomplished green lacquer coating, exposing the graphics field that the positive follow-up needs of metal substrate are electroplated,
Step 12, be covered with the circuit web plate
Be covered with the circuit web plate in the metal substrate front,
Step 13, metallization pre-treatment
The metallization pre-treatment that the plated metal line layer is carried out in the graphics field of windowing has been accomplished in step 11 metal substrate front,
Step 14, remove the circuit web plate
The circuit web plate that metal substrate front in the step 12 is covered with removes,
Step 15, plated metal line layer
The positive zone of accomplishing the pre-treatment of plated metal line layer of step 13 metal substrate electroplated goes up the metallic circuit layer, after said metallic circuit layer is electroplated and is accomplished promptly on the positive top that forms pin or Ji Dao and pin relatively of metal substrate,
Step 10 six, load and chip bottom are filled
Chip and chip bottom filling epoxy resin in the top front face upside-down mounting of relative Ji Dao that forms of step 15 or pin,
Step 10 seven, seal
The plastic packaging material operation is sealed in metal substrate front after step 10 six completion flip-chip and the chip bottom filling,
The green lacquer of part is removed at step 10 eight, the metal substrate back side
Utilize exposure imaging equipment that the green lacquer of metal substrate back side coating is carried out graph exposure, develops and windows, exposing the graphics field that the follow-up needs in the metal substrate back side carry out chemical etching,
Step 10 nine, chemical etching
The graphics field of windowing is accomplished at the metal substrate back side in the step 10 eight carries out chemical etching,
Step 2 ten, plated metal line layer
Accomplish the inert metal line layer surface of exposing after the chemical etching in step 10 nine and carry out the plating of metallic circuit layer, promptly form the bottom of pin or Ji Dao and pin after the metallic circuit layer is electroplated and accomplished relatively at the metal substrate back side,
Step 2 11, green lacquer coating
The lining of green lacquer is carried out at the metal substrate back side in that step 2 ten is accomplished the plated metal line layer,
Step 2 12, the surperficial perforate of green lacquer
The follow-up perforate operation that will plant the metal ball zone is carried out on green lacquer surface in step 2 11 metal substrate back side coatings,
Step 2 13, cleaning
The green lacquer tapping in the step 2 12 metal substrate back sides is cleaned
Step 2 14, plant ball
The aperture of crossing cleaning at the step 2 Thirteen Classics is implanted into metal ball,
Step 2 15, cutting finished product
Step 2 14 is accomplished the semi-finished product of planting ball carry out cutting operation; Make originally to integrate and to contain more than cuttings of plastic-sealed body module of chip independent, make the three-dimensional circuit of flip-chip single face and be honored as a queen earlier and lose the encapsulating structure finished product with array aggregate mode.
2. be honored as a queen earlier encapsulating structure of erosion manufacturing approach of the three-dimensional circuit of flip-chip single face according to claim 1; It is characterized in that: it comprises Ji Dao (15), pin (14) and chip (8); Said chip (8) upside-down mounting is in Ji Dao (15) and pin (14) front; Be provided with underfill (9) between said chip (8) bottom and Ji Dao (15) and pin (14) front; The zone between zone, pin (14) and the pin (14) between zone, Ji Dao (15) and the pin (14) of said Ji Dao (15) periphery and the zone of Ji Dao (15) and pin (14) bottom are encapsulated with green lacquer (3); The outer plastic packaging material (10) that is encapsulated with of the zone on said Ji Dao (15) and pin (14) top and chip (8); Offer aperture (11) on green lacquer (3) surface of said pin (14) bottom; Said aperture (11) is connected with pin (14) back side, is provided with metal ball (13) in the said aperture (11), and said metal ball (13) contacts with pin (14) back side.
3. the three-dimensional circuit of a kind of flip-chip single face according to claim 1 erosion manufacturing approach of being honored as a queen earlier, it is characterized in that: the green lacquer tapping in 13 pairs of metal substrate back sides of said step 2 cleans and carries out the coat of metal lining simultaneously.
4. the three-dimensional circuit of a kind of flip-chip single face according to claim 2 is honored as a queen earlier and is lost the encapsulating structure of manufacturing approach; It is characterized in that: said encapsulating structure comprises Ji Dao (15); This moment, chip (8) upside-down mounting Ji Dao (15) and pin (14) front were provided with underfill (9) between said chip (8) bottom and Ji Dao (15) front and pin (14) front.
5. the three-dimensional circuit of a kind of flip-chip single face according to claim 4 is honored as a queen earlier and is lost the encapsulating structure of manufacturing approach, and it is characterized in that: said Ji Dao (15) has single or a plurality of.
CN2012101900111A 2012-06-09 2012-06-09 Manufacture method of flip chip single-faced three-dimensional circuit manufactured by encapsulation prior to etching and flip chip single-faced three-dimensional circuit encapsulation structure Active CN102723288B (en)

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CN103400770A (en) * 2013-08-06 2013-11-20 江苏长电科技股份有限公司 Packaging-prior-to-etching chip-flipped bump type three-dimensional system-level metal circuit board and process method thereof
CN103400775A (en) * 2013-08-06 2013-11-20 江苏长电科技股份有限公司 Packaging-prior-to-etching type three-dimensional system-level chip-flipped bump packaging structure and process method thereof
CN103515249A (en) * 2013-08-06 2014-01-15 江苏长电科技股份有限公司 Firstly-packaged secondly-etched three-dimensional system level chip front-installed bump packaged structure and technology method thereof

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CN1691314A (en) * 2004-04-21 2005-11-02 美龙翔微电子科技(深圳)有限公司 Flip ball grid array packaging base plate and making technique thereof
CN101840901A (en) * 2010-04-30 2010-09-22 江苏长电科技股份有限公司 Lead frame structure of static release ring without paddle and production method thereof
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Publication number Priority date Publication date Assignee Title
CN103400770A (en) * 2013-08-06 2013-11-20 江苏长电科技股份有限公司 Packaging-prior-to-etching chip-flipped bump type three-dimensional system-level metal circuit board and process method thereof
CN103400775A (en) * 2013-08-06 2013-11-20 江苏长电科技股份有限公司 Packaging-prior-to-etching type three-dimensional system-level chip-flipped bump packaging structure and process method thereof
CN103515249A (en) * 2013-08-06 2014-01-15 江苏长电科技股份有限公司 Firstly-packaged secondly-etched three-dimensional system level chip front-installed bump packaged structure and technology method thereof
CN103400770B (en) * 2013-08-06 2016-02-24 江苏长电科技股份有限公司 First be honored as a queen and lose flip-chip salient point three-dimensional systematic metal circuit board and process
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