CN102683322B - POP encapsulating structure and manufacture method thereof - Google Patents
POP encapsulating structure and manufacture method thereof Download PDFInfo
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- CN102683322B CN102683322B CN201110059126.2A CN201110059126A CN102683322B CN 102683322 B CN102683322 B CN 102683322B CN 201110059126 A CN201110059126 A CN 201110059126A CN 102683322 B CN102683322 B CN 102683322B
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H01L2224/732—Location after the connecting process
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- H01L2224/73253—Bump and layer connectors
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
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- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
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- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
- H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
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Abstract
Description
技术领域 technical field
本发明涉及半导体封装领域，尤其涉及POP封装结构及其制造方法。The invention relates to the field of semiconductor packaging, in particular to a POP packaging structure and a manufacturing method thereof.
背景技术 Background technique
在逻辑电路及存储器领域，POP封装(叠层封装，package-on-package)已经称为业界的首选，主要应用于制造高端便携式设备和智能手机使用的先进移动通信平台。由于POP封装可以支持便携式设备对复杂性和功能性的需求，因此称为该领域的发动机。一些应用处理器或基带/应用存储器组合这样的核心部件，目前倾向于POP封装解决方案。In the field of logic circuits and memory, POP packaging (package-on-package) has become the industry's first choice, mainly used in the manufacture of advanced mobile communication platforms used in high-end portable devices and smart phones. Because the POP package can support the complexity and functionality of portable devices, it is called the engine of this field. Some core components such as application processors or baseband/application memory combinations are currently leaning towards POP packaging solutions.
图1为现有的POP封装结构的示意图。由图1可知，现有的POP封装的结构中，上层封装结构10通过其焊球11设置于下层封装结构20的上表面。其中所述焊球11与所述下层封装结构20上表面的焊盘21形成电气连接，由此执行复杂的功能。FIG. 1 is a schematic diagram of an existing POP packaging structure. As can be seen from FIG. 1 , in the existing POP package structure, the upper package structure 10 is disposed on the upper surface of the lower package structure 20 through its solder balls 11 . The solder balls 11 are electrically connected to the solder pads 21 on the upper surface of the lower packaging structure 20 , thereby performing complex functions.
但是，如上所述的现有POP封装结构中，由于上层封装结构10与下层封装结构20的连接仅通过球状的焊球11形成，因此应力集中作用于焊球11与下层封装结构的接合部位的边角部分，导致焊球11翘起，从而上层封装结构10与下层封装结构20的电气连接断开，半导体元件无法正常运行。However, in the conventional POP package structure as described above, since the connection between the upper package structure 10 and the lower package structure 20 is only formed by spherical solder balls 11, the stress concentrates on the junction of the solder balls 11 and the lower package structure. The corner portion causes the solder ball 11 to lift up, so that the electrical connection between the upper packaging structure 10 and the lower packaging structure 20 is disconnected, and the semiconductor element cannot operate normally.
发明内容 Contents of the invention
本发明是为了解决上述问题而提出的，其目的在于提供一种POP封装结构及其制造方法，所述POP封装结构能够有效地分散上层封装结构与下层封装结构的结合应力，从而使采用这种封装方式的半导体元件的运行更加稳定。The present invention is proposed to solve the above problems, and its purpose is to provide a POP packaging structure and its manufacturing method, the POP packaging structure can effectively disperse the bonding stress of the upper packaging structure and the lower packaging structure, so that the use of this The operation of the packaged semiconductor element is more stable.
根据本发明的一方面，提供一种POP封装结构，包括上层封装结构及下层封装结构，其中所述上层封装结构的焊球通过焊接连接于所述下层封装结构的上表面，而且，还包括设置于所述上层封装结构与所述下层封装结构之间的连接层，且该连接层包括：与所述上层封装结构的下表面形成连接的焊料层；设置于所述焊料层下侧的金属层；设置于所述金属层下侧的粘接层，该粘接层与下层封装结构形成连接。According to one aspect of the present invention, a POP packaging structure is provided, including an upper packaging structure and a lower packaging structure, wherein the solder balls of the upper packaging structure are connected to the upper surface of the lower packaging structure by soldering, and also include a set A connection layer between the upper packaging structure and the lower packaging structure, and the connection layer includes: a solder layer forming a connection with the lower surface of the upper packaging structure; a metal layer disposed on the lower side of the solder layer ; An adhesive layer disposed on the lower side of the metal layer, the adhesive layer forms a connection with the lower packaging structure.
其中，所述上层封装结构的下表面设有铜覆盖区，以与所述焊料层形成连接。Wherein, the lower surface of the upper packaging structure is provided with a copper covering area to form a connection with the solder layer.
其中，所述上层封装结构的上表面设有粘接区，以与所述粘接层形成连接。Wherein, an adhesive area is provided on the upper surface of the upper packaging structure to form a connection with the adhesive layer.
优选地，所述金属层为铜层，以提高连接层的稳定性的同时提高所述POP封装结构的散热性能。Preferably, the metal layer is a copper layer, so as to improve the stability of the connection layer and improve the heat dissipation performance of the POP package structure.
优选地，所述粘接层由导热胶形成，以提高所述POP封装结构的散热性能。Preferably, the bonding layer is formed of thermally conductive glue, so as to improve the heat dissipation performance of the POP packaging structure.
根据本发明的另一方面，提供一种POP封装结构的制造方法，包括以下步骤：制作上层封装结构及下层封装结构；将连接层设置于所述下层封装结构的上表面；通过所述连接层以及上层封装结构的焊球，将上层封装结构设置于所述下层封装结构的上面，其中，所述连接层包括：与所述上层封装结构的下表面形成连接的焊料层；设置于所述焊料层下侧的金属层；设置于所述金属层下侧的粘接层，该粘接层与下层封装结构形成连接。According to another aspect of the present invention, there is provided a method for manufacturing a POP packaging structure, comprising the following steps: making an upper packaging structure and a lower packaging structure; disposing a connecting layer on the upper surface of the lower packaging structure; passing through the connecting layer and the solder balls of the upper packaging structure, the upper packaging structure is disposed on the lower packaging structure, wherein the connection layer includes: a solder layer that forms a connection with the lower surface of the upper packaging structure; The metal layer on the lower side of the layer; the adhesive layer arranged on the lower side of the metal layer, and the adhesive layer forms a connection with the lower packaging structure.
其中，在所述制作上层封装结构及下层封装结构的步骤中，还包括在所述下层封装结构的上表面设置粘接区的步骤。Wherein, in the step of manufacturing the upper packaging structure and the lower packaging structure, a step of setting an adhesive area on the upper surface of the lower packaging structure is also included.
其中，在所述制作上层封装结构及下层封装结构的步骤中，还包括在所述上层封装结构的底面设置铜覆盖区的步骤。Wherein, in the step of manufacturing the upper packaging structure and the lower packaging structure, a step of setting a copper covering area on the bottom surface of the upper packaging structure is also included.
优选地，所述金属层为铜层，以提高连接层的稳定性的同时提高所述POP封装结构的散热性能。Preferably, the metal layer is a copper layer, so as to improve the stability of the connection layer and improve the heat dissipation performance of the POP package structure.
优选地，所述粘接层由导热胶形成，以提高所述POP封装结构的散热性能。Preferably, the bonding layer is formed of thermally conductive glue, so as to improve the heat dissipation performance of the POP packaging structure.
根据本发明提供的POP封装结构及其制造方法，能够有效地分散上层封装结构与下层封装结构之间的结合应力。并且，通过设置于上层封装结构与下层封装结构之间的连接层，能够进一步提高POP封装结构的散热性能。According to the POP package structure and the manufacturing method thereof provided by the present invention, the bonding stress between the upper package structure and the lower package structure can be effectively dispersed. Moreover, the heat dissipation performance of the POP packaging structure can be further improved through the connecting layer disposed between the upper packaging structure and the lower packaging structure.
附图说明 Description of drawings
通过下面结合示例性地示出一例的附图进行的描述，本发明的上述和其他目的和特点将会变得更加清楚，其中：The above and other objects and features of the present invention will become more apparent through the following description in conjunction with the accompanying drawings exemplarily showing an example, wherein:
图1现有的POP封装结构的示意图；Fig. 1 is a schematic diagram of an existing POP packaging structure;
图2为根据本发明的POP封装结构的示意图；Fig. 2 is the schematic diagram according to the POP packaging structure of the present invention;
图3为图2中的连接层的示意图。FIG. 3 is a schematic diagram of the connection layer in FIG. 2 .
具体实施方式 detailed description
以下，参照附图来详细说明根据本发明的实施例的POP封装结构。在以下说明中，为了能够更加准确地说明本发明的技术方案，对于本领域的与本发明没有直接关系的技术内容省略说明。部分组成部件在附图中被适当地扩张、省略及简化，并且各个组成部件的大小并不等同于实际大小。Hereinafter, a POP package structure according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the following description, in order to describe the technical solutions of the present invention more accurately, descriptions of technical contents in the field that are not directly related to the present invention are omitted. Some constituent parts are appropriately expanded, omitted and simplified in the drawings, and the size of each constituent part is not equal to the actual size.
如图2至图3所示，根据本发明实施例的POP封装结构包括：上层封装结构100、下层封装结构200以及连接层300。在本实施例中，所述上层封装结构100及下层封装结构200均为球栅阵列封装结构(BGA)。由此，所述上层封装结构100通过焊球101以及连接层300与所述下层封装结构200形成连接。其中，所述焊球101与所述下层封装结构200形成电气连接。具体说，所述下层封装结构200的包封材料202内设置有与所述焊球101形成电气连接的导电柱201，该导电柱201的设置位置及数量与所述上层封装结构100的焊球101相互对应，且所述导电柱201穿过所述包封材料202与PCB基板203上的焊盘(未图示)形成电气连接，从而使POP封装结构执行复杂的功能。显然，当下层封装结构200仅在中央部位设置包封材料，致使上层封装结构100的焊球101直接面对下层封装结构200的PCB基板时，焊球101直接焊接于该PCB基板的焊盘上。在本发明中，除了使用焊球101连接上层封装结构100与下层封装结构200之外，额外地在两个封装结构100、200之间增设连接层300，以将应力分散到中央部位，避免应力集中到焊球与下层封装结构的接合部位的边角部分，从而防止了焊球的翘起。其中，所述连接层300从上到下依次由焊料层301、金属层302、粘接层303构成。所述焊料层301与所述上层封装结构100的底面形成连接，为此，所述上层封装结构100的下表面还可以设置铜覆盖区，以提高焊接可靠性。优选地，所述铜覆盖区的面积大于焊料层301的面积。所述金属层302设置于所述焊料层301的下侧，在增加连接层300的稳定性的同时还具有散热功能。优选地，所述金属层为铜层，但并不局限于此，还可以采用具有良好的散热功能及焊接效果的其他金属。所述粘接层303设置于所述金属层302的下面，且与所述下层封装结构200的上表面形成连接。优选地，所述粘接层303由导热胶构成，以提高POP封装结构的散热性能。而且，所述下层封装结构200的上表面设置有粘接区，用以设置所述粘接层303，且所述粘接区的面积大于所述粘接层303的面积。此时，所述粘接区可以包括普通的双面胶，也可以是单独划分后进行粗糙化的区域。而且，在本发明中，所述连接层并不局限于上述结构，即在金属层的两侧可以设置液体胶，来替代粘接层及焊料层。As shown in FIG. 2 to FIG. 3 , the POP package structure according to the embodiment of the present invention includes: an upper package structure 100 , a lower package structure 200 and a connection layer 300 . In this embodiment, the upper packaging structure 100 and the lower packaging structure 200 are ball grid array packaging structures (BGA). Thus, the upper packaging structure 100 is connected to the lower packaging structure 200 through the solder balls 101 and the connection layer 300 . Wherein, the solder balls 101 are electrically connected to the lower packaging structure 200 . Specifically, the encapsulation material 202 of the lower packaging structure 200 is provided with a conductive column 201 electrically connected to the solder ball 101, and the location and number of the conductive column 201 are similar to those of the solder ball of the upper packaging structure 100. 101 correspond to each other, and the conductive pillars 201 pass through the encapsulation material 202 to form electrical connections with pads (not shown) on the PCB substrate 203 , so that the POP packaging structure performs complex functions. Obviously, the lower packaging structure 200 is only provided with encapsulation material at the central part, so that when the solder balls 101 of the upper packaging structure 100 directly face the PCB substrate of the lower packaging structure 200, the solder balls 101 are directly soldered to the pads of the PCB substrate. . In the present invention, in addition to using solder balls 101 to connect the upper package structure 100 and the lower package structure 200, a connection layer 300 is additionally added between the two package structures 100, 200 to disperse the stress to the central part and avoid stress Concentrate on the corners of the joints between the solder balls and the lower packaging structure, thereby preventing the solder balls from lifting. Wherein, the connection layer 300 is composed of a solder layer 301 , a metal layer 302 , and an adhesive layer 303 sequentially from top to bottom. The solder layer 301 is connected to the bottom surface of the upper packaging structure 100 , for this purpose, a copper covering area may be provided on the lower surface of the upper packaging structure 100 to improve soldering reliability. Preferably, the area of the copper covering area is larger than the area of the solder layer 301 . The metal layer 302 is disposed on the lower side of the solder layer 301 , which not only increases the stability of the connection layer 300 but also has a heat dissipation function. Preferably, the metal layer is a copper layer, but it is not limited thereto, and other metals with good heat dissipation function and soldering effect can also be used. The adhesive layer 303 is disposed under the metal layer 302 and is connected to the upper surface of the lower packaging structure 200 . Preferably, the adhesive layer 303 is made of thermally conductive glue, so as to improve the heat dissipation performance of the POP packaging structure. Moreover, an adhesive area is provided on the upper surface of the lower packaging structure 200 for disposing the adhesive layer 303 , and the area of the adhesive area is larger than that of the adhesive layer 303 . At this time, the bonding area may include common double-sided adhesive tape, or may be an area that is divided and roughened separately. Moreover, in the present invention, the connection layer is not limited to the above structure, that is, liquid glue can be provided on both sides of the metal layer to replace the adhesive layer and the solder layer.
以下，对如上说明的根据本发明的POP封装结构的制造方法进行说明。Hereinafter, the manufacturing method of the POP package structure according to the present invention as described above will be described.
首先，制作上层封装结构及下层封装结构。在本实施例中，所述上层封装结构及下层封装结构为球栅阵列封装结构，但是所述上层封装结构不限于此。当所述上层封装结构采用其他形式的封装结构时，可以另设柱状导电体来替代焊球。所述上层封装结构及下层封装结构的制造方法属于现有技术的范畴，因此在此不再详述。Firstly, the upper packaging structure and the lower packaging structure are fabricated. In this embodiment, the upper packaging structure and the lower packaging structure are ball grid array packaging structures, but the upper packaging structure is not limited thereto. When the upper package structure adopts other forms of package structure, additional columnar conductors can be provided instead of solder balls. The manufacturing methods of the upper packaging structure and the lower packaging structure belong to the scope of the prior art, so they will not be described in detail here.
在制作完成上层封装结构及下层封装结构之后，进行各项测试，测试的内容包括电特性测试与外观检查。由此，将得到的其中一个良品作为POP封装结构中的下层封装结构。此时，所述下层封装结构的包封材料中可能包含用于将PCB基板的电路延伸到下层封装结构的上表面的导电柱，所述导电柱可以在下层封装结构的制造过程中形成，也可以在制造出下层封装结构之后通过穿孔并填充导电材料的方式形成。After the upper-layer packaging structure and the lower-layer packaging structure are manufactured, various tests are carried out, including electrical characteristic testing and appearance inspection. Thus, one of the obtained good products is used as the lower packaging structure in the POP packaging structure. At this time, the encapsulation material of the lower packaging structure may contain conductive posts for extending the circuit of the PCB substrate to the upper surface of the lower packaging structure, and the conductive posts may be formed during the manufacturing process of the lower packaging structure, or It can be formed by punching holes and filling conductive materials after the lower packaging structure is manufactured.
然后，将连接层的粘接层设置于所述焊接区的上面。此时，可以选择性地在所述下层封装结构的上表面形成粘接区，以在该粘接区的上面设置连接层。所述粘接区可以包括普通的双面胶构成，也可以是对所述下层封装结构的上表面进行单独划分后进行粗糙化而增加粘接性能的区域。在本实施例中，所述连接层从上到下依次由焊料层、金属层以及粘接层构成。其中，所述金属层优选为铜层，所述粘接层由导热胶构成。此时，所述连接层的形成过程如下。首先，在下层封装结构的上表面设置粘接层。然后，在所述粘接层的上面粘贴金属层。最后，在所述金属层的上表面设置焊料层。而且，在本发明中，所述连接层并不局限于上述结构，即在金属层的两侧可以设置液体胶，来替代粘接层及焊料层。Then, the adhesive layer of the connecting layer is arranged on the welding area. At this time, an adhesive area may be selectively formed on the upper surface of the lower packaging structure, so as to arrange a connection layer on the adhesive area. The adhesive area may be composed of ordinary double-sided adhesive tape, or may be an area where the upper surface of the lower packaging structure is divided separately and then roughened to increase the adhesive performance. In this embodiment, the connection layer is composed of a solder layer, a metal layer and an adhesive layer in order from top to bottom. Wherein, the metal layer is preferably a copper layer, and the adhesive layer is made of thermally conductive adhesive. At this time, the formation process of the connection layer is as follows. First, an adhesive layer is provided on the upper surface of the lower packaging structure. Then, a metal layer is pasted on the adhesive layer. Finally, a solder layer is provided on the upper surface of the metal layer. Moreover, in the present invention, the connection layer is not limited to the above structure, that is, liquid glue can be provided on both sides of the metal layer to replace the adhesive layer and the solder layer.
然后，将上层封装结构设置在所述下层封装结构的上面。此时，可以选择性地在上层封装结构的下表面设置铜覆盖区，以增加焊接可靠性。并且，可以在所述铜覆盖区的上面涂覆助焊剂。所述铜覆盖区可以通过金属镀层的方式形成于所述上层封装结构的底面。如此，使分布在上层封装结构底面周围的焊球与下层封装结构的导电柱或PCB基板的焊盘对齐，并使所述铜覆盖区与所述连接层的焊料层对准，然后在专用设备中，使上层封装结构的焊球与下层封装结构的导电柱形成电气连接。Then, the upper encapsulation structure is disposed on the lower encapsulation structure. At this time, a copper covering area may be selectively provided on the lower surface of the upper package structure to increase soldering reliability. Also, flux may be applied on top of the copper footprint. The copper covering area may be formed on the bottom surface of the upper package structure by means of metal plating. In this way, the solder balls distributed around the bottom surface of the upper packaging structure are aligned with the conductive pillars of the lower packaging structure or the pads of the PCB substrate, and the copper coverage area is aligned with the solder layer of the connection layer, and then the dedicated equipment In this method, the solder balls of the upper packaging structure are electrically connected to the conductive columns of the lower packaging structure.
然后，对经过上述步骤而形成的POP封装结构进行各项测试，其中测试内容包括电特性测试和外观检查。Then, various tests are carried out on the POP packaging structure formed through the above steps, wherein the test content includes electrical characteristic test and appearance inspection.
由此，完成POP封装结构的制造过程，并对最终成品进行包装。Thus, the manufacturing process of the POP packaging structure is completed, and the final product is packaged.
采用上述制造工艺制造出的POP封装结构，由于在上下两个封装结构的中间设置了能够分散应力的连接层，因此能够提高连接可靠性。In the POP packaging structure manufactured by the above-mentioned manufacturing process, since a connection layer capable of dispersing stress is provided in the middle of the upper and lower packaging structures, the connection reliability can be improved.
本发明不限于上述实施例，在不脱离本发明范围的情况下，可以进行各种变形和修改。The present invention is not limited to the above-described embodiments, and various variations and modifications can be made without departing from the scope of the present invention.
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| CN109411373A (en) * | 2018-09-18 | 2019-03-01 | 中国工程物理研究院电子工程研究所 | A method of realizing that multilager base plate is three-dimensional stacked using carrier supported |
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| TW201640590A (en) * | 2015-05-04 | 2016-11-16 | 矽品精密工業股份有限公司 | Electronic package structure and the manufacture thereof |
| CN106374208B (en) * | 2016-10-09 | 2019-06-18 | 华进半导体封装先导技术研发中心有限公司 | High bandwidth organic substrate antenna structure and production method |
| CN119008549A (en) * | 2024-08-09 | 2024-11-22 | 中国电子科技集团公司第二十六研究所 | Micro-module, manufacturing method and tooling of package body |
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