CN102677156B - Massive polycrystalline silicon charging device for Czochralski silicon single crystal furnace - Google Patents
Massive polycrystalline silicon charging device for Czochralski silicon single crystal furnace Download PDFInfo
- Publication number
- CN102677156B CN102677156B CN201210189952.3A CN201210189952A CN102677156B CN 102677156 B CN102677156 B CN 102677156B CN 201210189952 A CN201210189952 A CN 201210189952A CN 102677156 B CN102677156 B CN 102677156B
- Authority
- CN
- China
- Prior art keywords
- material guiding
- guiding pipe
- corrugated tube
- screw mandrel
- silica glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a massive polycrystalline silicon charging device for a Czochralski silicon single crystal furnace. According to the massive polycrystalline silicon charging device, a barrier ball is used as an isolation device of polycrystalline silicon; a material guiding pipe is used as a material guiding device which is used for injecting the polycrystalline silicon and passes through a gate valve or a flap valve; the gate valve or the flap valve is used as a vacuum device for isolating the Czochralski silicon single crystal furnace; and the dimensions of the devices are far greater than the granularity of the polycrystalline silicon, so that the massive polycrystalline silicon charging device for the Czochralski silicon single crystal furnace can inject the massive polycrystalline silicon of which the granularity is less than 50 millimeters and granular polycrystalline silicon of which the granularity is less than 5 millimeters into the Czochralski silicon single crystal furnace, and thus, the problem that only the granular polycrystalline silicon of which the granularity is less than 5 millimeters can be injected into the Czochralski silicon single crystal furnace, and the massive polycrystalline silicon cannot be injected into the Czochralski silicon single crystal furnace in the conventional polycrystalline silicon charging bin is solved.
Description
Technical field
The present invention relates to a kind of chunk polysilicon feeding device for straight pulling silicon single crystal furnace.
Background technology
Manufacture silicon single-crystal and mainly adopt vertical pulling method (Czochralski method), the growth of silicon single-crystal completes in straight pulling silicon single crystal furnace.In order to reduce energy consumption when using now conventional straight pulling silicon single crystal furnace growing silicon single crystal, improve single furnace output and quality generally uses feeding technique again, concrete working method is: first fill bulk or granulated polycrystalline silicon by crucible used, again through vacuumizing, polysilicon melts, melt temperature is stablized, crystal seed and melt welding, thin neck growth, shoulder grows, isodiametric growth, the steps such as ending grow first silicon single-crystal, the silicon melt of residue about 1/3 in crucible, silicon single-crystal is cooled to 200-300oC while being entered secondary furnace chamber with the pulling rate of setting by lift, in silicon single-crystal rising process of cooling, from the feeding chamber being arranged on bell side, granular polycrystalline silicon material is added in quartz crucible, start second polysilicon thaw process, after the temperature of silicon single-crystal is cooled to set(ting)value, take out monocrystalline, after the polysilicon added melts completely, start the process of growth of second silicon single-crystal.The process repeated above can use a quartz crucible growth 5-10 root silicon single-crystal.
In use, the adding of polysilicon, the fusing of polysilicon, the growth of silicon single-crystal, complete now conventional straight pulling silicon single crystal furnace sequentially in same crucible.There is the straight pulling silicon single crystal furnace that a kind of silicon melt is annotated continuously now, crystal growth completes in quartz crucible, being melted in ad hoc melting area of polysilicon completes, while silicon monocrystal growth, granular polycrystalline silicon is added into unmelted polycrystalline silicon district from feeding chamber, after melting area is converted to silicon melt by continuous supplementation in the quartz crucible of silicon monocrystal growth.
Two kinds of straight pulling silicon single crystal furnaces all will use polysilicon feeding chamber, and the polysilicon feeding chamber seen at present all can only be annotated granular polycrystalline silicon in single crystal growing furnace, chunk polysilicon of can not annotating.Granular polycrystalline silicon is of a size of the spheroid that diameter is less than 5mm.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of chunk polysilicon feeding device for straight pulling silicon single crystal furnace is provided.
A kind of chunk polysilicon feeding device for straight pulling silicon single crystal furnace: be provided with Cang Gai in turn from top to bottom, warehouse, turnover panel valve body, the storehouse side of covering from left to right is provided with backgauge ball lifting assembly in turn, material guiding pipe lifting assembly, charging opening, backgauge ball lifting assembly is provided with motor from top to bottom in turn, step-down gear, anchor, guiding slide bar, screw mandrel, corrugated tube lifting member, corrugated tube, lifting rod, motor, step-down gear, guiding slide bar, screw mandrel is arranged on anchor, and corrugated tube lifting member is connected on screw mandrel by internal thread and also can slides up and down along guiding slide bar, corrugated tube, lifting rod is arranged on the below of corrugated tube lifting member, and material guiding pipe lifting assembly is provided with motor from top to bottom in turn, step-down gear, anchor, guiding slide bar, screw mandrel, corrugated tube lifting member, corrugated tube, lifting rod, motor, step-down gear, guiding slide bar, screw mandrel is arranged on anchor, and corrugated tube lifting member is connected on screw mandrel by internal thread and also can slides up and down along guiding slide bar, corrugated tube, lifting rod is arranged on the below of corrugated tube lifting member, is provided with silica glass inner sleeve in turn from outside to inside in warehouse top, backgauge ball, backgauge ball elevating lever, material guiding pipe elevating lever, warehouse is provided with material guiding pipe in bottom, and material guiding pipe is suspended on the lower end of material guiding pipe elevating lever by material guiding pipe hook, and material guiding pipe hook is by inner ring, pull bar, set screw, annular holder is formed, and the bottom shape of annular holder is annular and is closely connected with the bottom of material guiding pipe, and material guiding pipe elevating lever is installed through inner ring, and warehouse lower outside wall is provided with vacuum pumping opening, vacuum valve, observation window, inlet mouth, turnover panel valve body comprises sealing-ring, division board, magnetic fluid seal, rocking bar, turnover panel body base is provided with sealing-ring, and the lower end of turnover panel valve body is provided with lower flange, and the external sidewall of flap valve is provided with magnetic fluid seal, rocking bar, rocking bar is connected with division board by magnetic fluid seal.
Described silica glass inner sleeve epimere is right cylinder, cylinder inner diameter D
1for 400-800mm, silica glass inner sleeve stage casing is cone, the half-angle α of cone
1for 15-45o, the overall height H of warehouse epimere barrel portion and stage casing conical sections and D
1ratio be 1.2-2:1, the diameter D of backgauge ball
2for 110-200mm, backgauge ball diametrically has through hole, through-hole diameter D
3for 15-25mm, the cylindrical height H of silica glass inner sleeve hypomere
1with the height h of material guiding pipe
3ratio be about 1:1, the cylindrical height H of silica glass inner sleeve hypomere
1with the height H of turnover panel valve body
2ratio be 1-1.5:1, silica glass inner sleeve hypomere cylinder inner diameter D
4for 100-160mm, the diameter D of division board
5for 140-200mm, the internal diameter of sealing-ring is 130-190mm, and the wall thickness of silica glass inner sleeve is 5-10mm.
The another kind of chunk polysilicon feeding device being used for straight pulling silicon single crystal furnace: be provided with Cang Gai in turn from top to bottom, warehouse, turnover panel valve body, the storehouse side of covering from left to right is provided with backgauge ball lifting assembly in turn, material guiding pipe lifting assembly, charging opening, backgauge ball lifting assembly is provided with motor from top to bottom in turn, step-down gear, anchor, guiding slide bar, screw mandrel, corrugated tube lifting member, corrugated tube, lifting rod, motor, step-down gear, guiding slide bar, screw mandrel is arranged on anchor, and corrugated tube lifting member is connected on screw mandrel by internal thread and also can slides up and down along guiding slide bar, corrugated tube, lifting rod is arranged on the below of corrugated tube lifting member, and material guiding pipe lifting assembly is provided with motor from top to bottom in turn, step-down gear, anchor, guiding slide bar, screw mandrel, corrugated tube lifting member, corrugated tube, lifting rod, motor, step-down gear, guiding slide bar, screw mandrel is arranged on anchor, and corrugated tube lifting member is connected on screw mandrel by internal thread and also can slides up and down along guiding slide bar, corrugated tube, lifting rod is arranged on the below of corrugated tube lifting member, is provided with silica glass inner sleeve in turn from outside to inside in warehouse top, backgauge ball, backgauge ball elevating lever, material guiding pipe elevating lever, warehouse is provided with material guiding pipe in bottom, and material guiding pipe is suspended on the lower end of material guiding pipe elevating lever by material guiding pipe hook, and material guiding pipe hook is by inner ring, pull bar, set screw, annular holder is formed, and the bottom shape of annular holder is annular and is closely connected with the bottom of material guiding pipe, and material guiding pipe elevating lever is installed through inner ring, and warehouse lower outside wall is provided with vacuum pumping opening, vacuum valve, observation window, inlet mouth, flashboard valve body comprises sealing-ring, division board, screw mandrel, shake wheel, magnetic fluid seal, division board moving member, lower flange, lower flange upper end is provided with sealing-ring, and flashboard valve body body outer side wall is provided with magnetic fluid seal, shake wheel, in flashboard valve body body, be provided with screw mandrel, division board, division board moving member, screw mandrel one end is connected with division board by division board moving member, and the screw mandrel the other end is connected with shaking to take turns by magnetic fluid seal, and division board moves in the horizontal direction under the drive of screw mandrel.
Described silica glass inner sleeve epimere right cylinder, cylinder inner diameter d
1for 400-800mm, silica glass inner sleeve stage casing is cone, the half-angle α of cone
2for 15-45o, total height h and the d of warehouse epimere barrel portion and stage casing conical sections
1ratio be the diameter d of 1.2-2:1, backgauge ball
2for 110-200mm, backgauge ball diametrically has through hole, through-hole diameter d
3for 15-25mm, the cylindrical height h of silica glass inner sleeve hypomere
1with the height h of material guiding pipe
3ratio be about 1:1, the cylindrical height h of silica glass inner sleeve hypomere
1with the height h of flashboard valve body
2ratio be 1-1.5:1, silica glass inner sleeve hypomere cylinder inner diameter d
4for 100-160mm, the internal diameter of sealing-ring 33 is 130-190mm, and the wall thickness of silica glass inner sleeve is 5-10mm.
Described material guiding pipe elevating lever and backgauge ball elevating lever are coaxially installed, and backgauge ball elevating lever is a hollow tubular structure, internal diameter d
6for 12-18mm, wall thickness is the outside diameter d of 1-3mm, material guiding pipe elevating lever
5for 8-16mm.
The material of described silica glass inner sleeve, backgauge ball, material guiding pipe is silica glass, and the material of described material guiding pipe hook, material guiding pipe elevating lever, backgauge ball elevating lever is metal molybdenum, and the material of the other parts of described feeding device is steel.
The present invention is by using backgauge ball as the disrupter of polysilicon, use material guiding pipe as the material guiding device passing through slide valve or flap valve injecting polysilicon, use slide valve or flap valve as the device of isolating straight pulling silicon single crystal furnace vacuum, the yardstick of these devices is much larger than the granularity of chunk polysilicon, a kind of chunk polysilicon feeding device for straight pulling silicon single crystal furnace of the present invention granularity of annotating in straight pulling silicon single crystal furnace is enable to be less than the granular polycrystalline silicon that the chunk polysilicon of 50mm and granularity be less than 5mm, solve existing polysilicon feeding chamber granularity of can only annotating in straight pulling silicon single crystal furnace and be less than the granular polycrystalline silicon of 5mm, can not to annotate the difficult problem of chunk polysilicon.
Accompanying drawing explanation
Fig. 1 is the chunk polysilicon feeding device I type structural representation for straight pulling silicon single crystal furnace;
Fig. 2 is the chunk polysilicon feeding device I type application schematic diagram for straight pulling silicon single crystal furnace;
Fig. 3 is the chunk polysilicon feeding device II type structural representation for straight pulling silicon single crystal furnace;
Fig. 4 is the chunk polysilicon feeding device II type application schematic diagram for straight pulling silicon single crystal furnace;
Fig. 5 is material guiding pipe and hook structure front view thereof;
Fig. 6 is material guiding pipe and hook structure vertical view thereof;
Fig. 7 is material guiding pipe elevating lever and backgauge ball lifting rod structure schematic diagram;
In figure: motor 1, step-down gear 2, corrugated tube lifting member 3, screw mandrel 4, guiding slide bar 5, anchor 6, corrugated tube 7, lifting rod 8, motor 9, step-down gear 10, anchor 11, screw mandrel 12, guiding slide bar 13, corrugated tube lifting member 14, corrugated tube 15, lifting rod 16, charging opening 17, storehouse lid 18, warehouse 19, silica glass inner sleeve 20, material guiding pipe elevating lever 21, backgauge ball elevating lever 22, backgauge ball 23, inlet mouth 24, material guiding pipe 25, observation window 26, vacuum valve 27, bleeding point 28, material guiding pipe hook 29, turnover panel valve body 30, division board 31, rocking bar 32, sealing-ring 33, lower flange 34, mounting flange 35, unmelted polycrystalline silicon pipe 36, temperature-stable pipe 37, crucible inner ring 38, crucible 39, monocrystalline 40, stay-warm case 41, secondary furnace chamber 42, flashboard valve body 43, division board 44, screw mandrel 45, shake wheel 46, lower flange 47, inner ring 48, pull bar 49, set screw 50, annular holder 51, magnetic fluid seal 52, division board moving member 53.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
As shown in Fig. 1, a kind of chunk polysilicon feeding device for straight pulling silicon single crystal furnace: be provided with storehouse lid 18 from top to bottom in turn, warehouse 19, turnover panel valve body 30, is from left to right provided with backgauge ball lifting assembly above storehouse lid 18 in turn, material guiding pipe lifting assembly, charging opening 17, backgauge ball lifting assembly is provided with motor 9 from top to bottom in turn, step-down gear 10, anchor 11, guiding slide bar 13, screw mandrel 12, corrugated tube lifting member 14, corrugated tube 15, lifting rod 16, motor 9, step-down gear 10, guiding slide bar 13, screw mandrel 12 is arranged on anchor 11, and corrugated tube lifting member 14 is connected on screw mandrel 12 by internal thread and also can slides up and down along guiding slide bar 13, corrugated tube 15, lifting rod 16 is arranged on the below of corrugated tube lifting member 14, and material guiding pipe lifting assembly is provided with motor 1 from top to bottom in turn, step-down gear 2, anchor 6, guiding slide bar 5, screw mandrel 4, corrugated tube lifting member 3, corrugated tube 7, lifting rod 8, motor 1, step-down gear 2, guiding slide bar 5, screw mandrel 4 etc. is arranged on anchor 6, and corrugated tube lifting member 3 is connected on screw mandrel 4 by internal thread and also can slides up and down along guiding slide bar 5, corrugated tube 7, lifting rod 8 is arranged on the below of corrugated tube lifting member 3, and warehouse 19 is provided with silica glass inner sleeve 20 in top from outside to inside in turn, backgauge ball 23, backgauge ball elevating lever 22, material guiding pipe elevating lever 21, warehouse 19 is provided with material guiding pipe 25 in bottom, and material guiding pipe 25 is suspended on the lower end of material guiding pipe elevating lever 21 by material guiding pipe hook 29, and material guiding pipe hook 29 is by inner ring 48, pull bar 49, set screw 50, annular holder 51 is formed, and the bottom shape of annular holder 51 is annular and is closely connected with the bottom of material guiding pipe 25, and material guiding pipe elevating lever 21 is installed through inner ring 48, and warehouse 19 lower outside wall is provided with vacuum pumping opening 28, vacuum valve 27, observation window 26, inlet mouth 24, turnover panel valve body 30 comprises sealing-ring 33, division board 31, magnetic fluid seal 52, rocking bar 32, is provided with sealing-ring 33 bottom turnover panel valve body 30, the lower end of turnover panel valve body 30 is provided with lower flange 34, and turnover panel valve body 30 outer side wall is provided with magnetic fluid seal 52, rocking bar 32, rocking bar 32 is connected with division board 31 by magnetic fluid seal 52.
Described silica glass inner sleeve 20 epimere is right cylinder, cylinder inner diameter D
1for 400-800mm, silica glass inner sleeve 20 stage casing is cone, the half-angle α of cone
1for 15-45o, the overall height H of warehouse 19 epimere barrel portion and stage casing conical sections and D
1ratio be 1.2-2:1, the diameter D of backgauge ball 23
2for 110-200mm, backgauge ball 23 diametrically has through hole, through-hole diameter D
3for 15-25mm, the cylindrical height H of silica glass inner sleeve 20 hypomere
1with the height h of material guiding pipe 25
3ratio be about 1:1, the cylindrical height H of silica glass inner sleeve 20 hypomere
1with the height H of turnover panel valve body 30
2ratio be 1-1.5:1, silica glass inner sleeve 20 hypomere cylinder inner diameter D
4for 100-160mm, the diameter D of division board 31
5for 140-200mm, the internal diameter of sealing-ring 33 is 130-190mm, and the wall thickness of silica glass inner sleeve 20 is 5-10mm.
As shown in Figure 2, a kind of chunk polysilicon feeding device I type application schematic diagram for straight pulling silicon single crystal furnace comprises a kind of chunk polysilicon feeding device I type for straight pulling silicon single crystal furnace of the present invention and mounting flange 35, unmelted polycrystalline silicon pipe 36, temperature-stable pipe 37, crucible inner ring 38, crucible 39, monocrystalline 40, stay-warm case 41, secondary furnace chamber 42.
As shown in Figure 3, the another kind of chunk polysilicon feeding device being used for straight pulling silicon single crystal furnace: be provided with storehouse lid 18 from top to bottom in turn, warehouse 19, turnover panel valve body 30, is from left to right provided with backgauge ball lifting assembly above storehouse lid 18 in turn, material guiding pipe lifting assembly, charging opening 17, backgauge ball lifting assembly is provided with motor 9 from top to bottom in turn, step-down gear 10, anchor 11, guiding slide bar 13, screw mandrel 12, corrugated tube lifting member 14, corrugated tube 15, lifting rod 16, motor 9, step-down gear 10, guiding slide bar 13, screw mandrel 12 is arranged on anchor 11, and corrugated tube lifting member 14 is connected on screw mandrel 12 by internal thread and also can slides up and down along guiding slide bar 13, corrugated tube 15, lifting rod 16 is arranged on the below of corrugated tube lifting member 14, and material guiding pipe lifting assembly is provided with motor 1 from top to bottom in turn, step-down gear 2, anchor 6, guiding slide bar 5, screw mandrel 4, corrugated tube lifting member 3, corrugated tube 7, lifting rod 8, motor 1, step-down gear 2, guiding slide bar 5, screw mandrel 4 etc. is arranged on anchor 6, and corrugated tube lifting member 3 is connected on screw mandrel 4 by internal thread and also can slides up and down along guiding slide bar 5, corrugated tube 7, lifting rod 8 is arranged on the below of corrugated tube lifting member 3, and warehouse 19 is provided with silica glass inner sleeve 20 in top from outside to inside in turn, backgauge ball 23, backgauge ball elevating lever 22, material guiding pipe elevating lever 21, warehouse 19 is provided with material guiding pipe 25 in bottom, and material guiding pipe 25 is suspended on the lower end of material guiding pipe elevating lever 21 by material guiding pipe hook 29, and material guiding pipe hook 29 is by inner ring 48, pull bar 49, set screw 50, annular holder 51 is formed, and the bottom shape of annular holder 51 is annular and is closely connected with the bottom of material guiding pipe 25, and material guiding pipe elevating lever 21 is installed through inner ring 48, and warehouse 19 lower outside wall is provided with vacuum pumping opening 28, vacuum valve 27, observation window 26, inlet mouth 24, flashboard valve body 43 comprises sealing-ring 33, division board 44, screw mandrel 45, shake wheel 46, magnetic fluid seal 52, division board moving member 53, lower flange 47, lower flange 47 upper end is provided with sealing-ring 33, and flashboard valve body 43 body outer side wall is provided with magnetic fluid seal 52, shake wheel 46, in flashboard valve body 43 body, be provided with screw mandrel 45, division board 44, division board moving member 53, screw mandrel 45 one end is connected with division board 44 by division board moving member 53, screw mandrel 45 the other end by magnetic fluid seal 52 with shake wheel 46 and be connected, division board 44 moves in the horizontal direction under the drive of screw mandrel 45.
Described silica glass inner sleeve 20 epimere right cylinder, cylinder inner diameter d
1for 400-800mm, silica glass inner sleeve 20 stage casing is cone, the half-angle α of cone
2for 15-45o, total height h and the d of warehouse 19 epimere barrel portion and stage casing conical sections
1ratio be the diameter d of 1.2-2:1, backgauge ball 23
2for 110-200mm, backgauge ball 23 diametrically has through hole, through-hole diameter d
3for 15-25mm, the cylindrical height h of silica glass inner sleeve 20 hypomere
1with the height h of material guiding pipe 25
3ratio be about 1:1, the cylindrical height h of silica glass inner sleeve 20 hypomere
1with the height h of flashboard valve body 43
2ratio be 1-1.5:1, silica glass inner sleeve 20 hypomere cylinder inner diameter d
4for 100-160mm, the internal diameter of sealing-ring 33 is 130-190mm, and the wall thickness of silica glass inner sleeve 20 is 5-10mm.
Described material guiding pipe elevating lever 21 and backgauge ball elevating lever 22 are coaxially installed, and backgauge ball elevating lever 22 is a hollow tubular structure, internal diameter d
6for 12-18mm, wall thickness is the outside diameter d of 1-3mm, material guiding pipe elevating lever 21
5for 8-16mm.
The material of described silica glass inner sleeve 20, backgauge ball 23, material guiding pipe 25 is silica glass, the material of described material guiding pipe hook 29, material guiding pipe elevating lever 21, backgauge ball elevating lever 22 is metal molybdenum, and the material of the other parts of described feeding device is steel.
As shown in Figure 4, a kind of chunk polysilicon feeding device II type application schematic diagram for straight pulling silicon single crystal furnace comprises a kind of chunk polysilicon feeding device II type for straight pulling silicon single crystal furnace of the present invention and mounting flange 35, unmelted polycrystalline silicon pipe 36, temperature-stable pipe 37, crucible inner ring 38, crucible 39, monocrystalline 40, stay-warm case 41, secondary furnace chamber 42.
As shown in Figure 5, Figure 6, material guiding pipe and hook structure front view thereof and vertical view comprise material guiding pipe 25, inner ring 48, pull bar 49, set screw 50, annular holder 51.
As shown in Fig. 7, material guiding pipe elevating lever and backgauge ball lifting rod structure schematic diagram comprise material guiding pipe elevating lever 21, backgauge ball elevating lever 22.
Backgauge ball 23 of the present invention controls adding of polysilicon, backgauge ball 23 can realize moving up and down under the control of backgauge ball elevating lever 22, size with polysilicon controls the lifting height of backgauge ball 23, makes feeding device possess filling granularity and is less than the ability that the chunk polysilicon of 50mm and granularity be less than the granular polycrystalline silicon of 5mm.Material guiding pipe 25 can move up and down under the control of material guiding pipe elevating lever 21, when needing to close lock (turning over) plate valve isolated vacuum, material guiding pipe 25 rises to its extreme higher position, annotate in straight pulling silicon single crystal furnace polysilicon time, material guiding pipe 25 drops to its extreme lower position, the upper end of material guiding pipe 25 and the lower end of silica glass inner sleeve 20 are cross-linked, the lower end of material guiding pipe 25 and the upper end of unmelted polycrystalline silicon pipe 36 are cross-linked, this mode of connection guarantees that the polysilicon of annotating can not enter in lock (turning over) plate valve, the folding of slide valve division board 44 and flap valve division board 31 can not be hindered.
Chunk polysilicon feeding device for straight pulling silicon single crystal furnace is arranged on the mounting flange 35 of the straight pulling silicon single crystal furnace that silicon melt is annotated continuously.In silicon monocrystal growth process, the step adding polysilicon in straight pulling silicon single crystal furnace is: rise the extreme higher position that material guiding pipe 25 is raised to it by material guiding pipe elevating lever 21, backgauge ball 23 is dropped to its extreme lower position by downshift pellet elevating lever 22, close division board 31 or the division board 44 of flap valve or slide valve, close vacuum valve 27, argon gas valve is reached maximum value through inlet mouth 24 to applying argon gas in feeding device of the present invention, argon gas is stopped after arriving normal pressure, open charging opening 17 and the chunk polysilicon added in warehouse 19 needed for growth silicon single-crystal or grain silicon, close charging opening 17, open vacuum valve 27 to vacuumize, when the pressure in feeding device of the present invention is identical with the pressure in single crystal growing furnace, open division board 31 or the division board 44 of flap valve or slide valve, the argon gas of technique flow is led to through inlet mouth 24, the extreme lower position that material guiding pipe 25 is dropped to it by material guiding pipe elevating lever 21 is fallen, backgauge ball 23 is raised to correct position by upshift pellet elevating lever 22, to annotate continuously in the unmelted polycrystalline silicon pipe 36 of straight pulling silicon single crystal furnace polysilicon.Crystal growth completes in quartz crucible, being melted in ad hoc melting area of polysilicon completes, while silicon monocrystal growth, polysilicon is added into unmelted polycrystalline silicon pipe 36 from feeding chamber, polysilicon is changed into silicon melt continuously in fusing pipe, silicon melt through temperature-stable pipe 37 by continuous supplementation in the quartz crucible 39 of silicon monocrystal growth, the growth of silicon single-crystal completes in quartz crucible 39.
The present invention is by using backgauge ball as the disrupter of polysilicon, use material guiding pipe as the material guiding device passing through slide valve or flap valve injecting polysilicon, use slide valve or flap valve as the device of isolating straight pulling silicon single crystal furnace vacuum, the yardstick of these devices is much larger than the granularity of chunk polysilicon, a kind of chunk polysilicon feeding device for straight pulling silicon single crystal furnace of the present invention granularity of annotating in straight pulling silicon single crystal furnace is enable to be less than the granular polycrystalline silicon that the chunk polysilicon of 50mm and granularity be less than 5mm, solve existing polysilicon feeding chamber granularity of can only annotating in straight pulling silicon single crystal furnace and be less than the granular polycrystalline silicon of 5mm, can not to annotate the difficult problem of chunk polysilicon.
The present invention can be used for the straight pulling silicon single crystal furnace that silicon melt is annotated continuously, also can be used for now conventional common straight pulling silicon single crystal furnace.
Claims (2)
1. for a chunk polysilicon feeding device for straight pulling silicon single crystal furnace, it is characterized in that: be provided with Cang Gai (18) from top to bottom in turn, warehouse (19), turnover panel valve body (30), Cang Gai (18) top is from left to right provided with backgauge ball lifting assembly in turn, material guiding pipe lifting assembly, charging opening (17), backgauge ball lifting assembly is provided with the first motor (9) from top to bottom in turn, first step-down gear (10), first anchor (11), first guiding slide bar (13), first screw mandrel (12), first corrugated tube lifting member (14), first corrugated tube (15), first lifting rod (16), the first motor (9), first step-down gear (10), first guiding slide bar (13), first screw mandrel (12) is arranged on the first anchor (11), and the first corrugated tube lifting member (14) is connected to the first screw mandrel (12) by internal thread and above also can slides up and down along the first guiding slide bar (13), the first corrugated tube (15), first lifting rod (16) is arranged on the below of the first corrugated tube lifting member (14), and material guiding pipe lifting assembly is provided with the second motor (1) from top to bottom in turn, second step-down gear (2), second anchor (6), second guiding slide bar (5), second screw mandrel (4), second corrugated tube lifting member (3), second corrugated tube (7), second lifting rod (8), the second motor (1), second step-down gear (2), second guiding slide bar (5), second screw mandrel (4) is arranged on the second anchor (6), and the second corrugated tube lifting member (3) is connected to the second screw mandrel (4) by internal thread and above also can slides up and down along the second guiding slide bar (5), the second corrugated tube (7), second lifting rod (8) is arranged on the below of the second corrugated tube lifting member (3), is provided with silica glass inner sleeve (20) from outside to inside in turn in warehouse (19) top, backgauge ball (23), backgauge ball elevating lever (22), material guiding pipe elevating lever (21), is provided with material guiding pipe (25) in warehouse (19) bottom, material guiding pipe (25) is suspended on the lower end of material guiding pipe elevating lever (21) by material guiding pipe hook (29), and material guiding pipe hook (29) is by inner ring (48), pull bar (49), set screw (50), annular holder (51) is formed, and the bottom shape of annular holder (51) is annular and is closely connected with the bottom of material guiding pipe (25), and material guiding pipe elevating lever (21) is installed through inner ring (48), and warehouse (19) lower outside wall is provided with vacuum pumping opening (28), vacuum valve (27), observation window (26), inlet mouth (24), turnover panel valve body (30) comprises sealing-ring (33), division board (31), magnetic fluid seal (52), rocking bar (32), turnover panel valve body (30) bottom is provided with sealing-ring (33), and the lower end of turnover panel valve body (30) is provided with lower flange (34), and turnover panel valve body (30) outer side wall is provided with magnetic fluid seal (52), rocking bar (32), rocking bar (32) is connected with division board (31) by magnetic fluid seal (52),
Described silica glass inner sleeve (20) epimere is right cylinder, cylinder inner diameter D
1for 400-800mm, silica glass inner sleeve (20) stage casing is cone, the half-angle α of cone
1for 15-45o, the overall height H of warehouse (19) epimere barrel portion and stage casing conical sections and D
1ratio be 1.2-2:1, the diameter D of backgauge ball (23)
2for 110-200mm, backgauge ball (23) diametrically has through hole, through-hole diameter D
3for 15-25mm, the cylindrical height H of silica glass inner sleeve (20) hypomere
1with the height h of material guiding pipe (25)
3ratio be 1:1, the cylindrical height H of silica glass inner sleeve (20) hypomere
1with the height H of turnover panel valve body (30)
2ratio be 1-1.5:1, silica glass inner sleeve (20) hypomere cylinder inner diameter D
4for 100-160mm, the diameter D of division board (31)
5for 140-200mm, the internal diameter of sealing-ring (33) is 130-190mm, and the wall thickness of silica glass inner sleeve (20) is 5-10mm.
2. for a chunk polysilicon feeding device for straight pulling silicon single crystal furnace, it is characterized in that: be provided with Cang Gai (18) from top to bottom in turn, warehouse (19), turnover panel valve body (30), Cang Gai (18) top is from left to right provided with backgauge ball lifting assembly in turn, material guiding pipe lifting assembly, charging opening (17), backgauge ball lifting assembly is provided with the first motor (9) from top to bottom in turn, first step-down gear (10), first anchor (11), first guiding slide bar (13), first screw mandrel (12), first corrugated tube lifting member (14), first corrugated tube (15), first lifting rod (16), the first motor (9), first step-down gear (10), first guiding slide bar (13), first screw mandrel (12) is arranged on the first anchor (11), and the first corrugated tube lifting member (14) is connected to the first screw mandrel (12) by internal thread and above also can slides up and down along the first guiding slide bar (13), the first corrugated tube (15), first lifting rod (16) is arranged on the below of the first corrugated tube lifting member (14), and material guiding pipe lifting assembly is provided with the second motor (1) from top to bottom in turn, second step-down gear (2), second anchor (6), second guiding slide bar (5), second screw mandrel (4), second corrugated tube lifting member (3), second corrugated tube (7), second lifting rod (8), the second motor (1), second step-down gear (2), second guiding slide bar (5), second screw mandrel (4) is arranged on the second anchor (6), and the second corrugated tube lifting member (3) is connected to the second screw mandrel (4) by internal thread and above also can slides up and down along the second guiding slide bar (5), the second corrugated tube (7), second lifting rod (8) is arranged on the below of the second corrugated tube lifting member (3), is provided with silica glass inner sleeve (20) from outside to inside in turn in warehouse (19) top, backgauge ball (23), backgauge ball elevating lever (22), material guiding pipe elevating lever (21), is provided with material guiding pipe (25) in warehouse (19) bottom, material guiding pipe (25) is suspended on the lower end of material guiding pipe elevating lever (21) by material guiding pipe hook (29), and material guiding pipe hook (29) is by inner ring (48), pull bar (49), set screw (50), annular holder (51) is formed, and the bottom shape of annular holder (51) is annular and is closely connected with the bottom of material guiding pipe (25), and material guiding pipe elevating lever (21) is installed through inner ring (48), and warehouse (19) lower outside wall is provided with vacuum pumping opening (28), vacuum valve (27), observation window (26), inlet mouth (24), flashboard valve body (43) comprises sealing-ring (33), division board (44), 3rd screw mandrel (45), shake wheel (46), magnetic fluid seal (52), division board moving member (53), lower flange (47), lower flange (47) upper end is provided with sealing-ring (33), and flashboard valve body (43) body outer side wall is provided with magnetic fluid seal (52), shake wheel (46), in flashboard valve body (43) body, be provided with the 3rd screw mandrel (45), division board (44), division board moving member (53), 3rd screw mandrel (45) one end is connected with division board (44) by division board moving member (53), 3rd screw mandrel (45) the other end is taken turns (46) by magnetic fluid seal (52) and is connected with shaking, division board (44) moves in the horizontal direction under the drive of the 3rd screw mandrel (45), described silica glass inner sleeve (20) epimere right cylinder, cylinder inner diameter d
1for 400-800mm, silica glass inner sleeve (20) stage casing is cone, the half-angle α of cone
2for 15-45o, total height h and the d of warehouse (19) epimere barrel portion and stage casing conical sections
1ratio be 1.2-2:1, the diameter d of backgauge ball (23)
2for 110-200mm, backgauge ball (23) diametrically has through hole, through-hole diameter d
3for 15-25mm, the cylindrical height h of silica glass inner sleeve (20) hypomere
1with the height h of material guiding pipe (25)
3ratio be 1:1, the cylindrical height h of silica glass inner sleeve (20) hypomere
1with the height h of flashboard valve body (43)
2ratio be 1-1.5:1, silica glass inner sleeve (20) hypomere cylinder inner diameter d
4for 100-160mm, the internal diameter of sealing-ring (33) is 130-190mm, and the wall thickness of silica glass inner sleeve (20) is 5-10mm.
3. a kind of chunk polysilicon feeding device for straight pulling silicon single crystal furnace as claimed in claim 1 or 2, it is characterized in that: described material guiding pipe elevating lever (21) and backgauge ball elevating lever (22) are coaxially installed, backgauge ball elevating lever (22) is a hollow tubular structure, internal diameter d
6for 12-18mm, wall thickness is 1-3mm, the outside diameter d of material guiding pipe elevating lever (21)
5for 8-16mm.
4. a kind of chunk polysilicon feeding device for straight pulling silicon single crystal furnace described in claim 1 or 2, it is characterized in that: the material of described silica glass inner sleeve (20), backgauge ball (23), material guiding pipe (25) is silica glass, described material guiding pipe hook (29), material guiding pipe elevating lever (21), the material of backgauge ball elevating lever (22) are metal molybdenum, and the material of the other parts of described feeding device is steel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210189952.3A CN102677156B (en) | 2012-06-11 | 2012-06-11 | Massive polycrystalline silicon charging device for Czochralski silicon single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210189952.3A CN102677156B (en) | 2012-06-11 | 2012-06-11 | Massive polycrystalline silicon charging device for Czochralski silicon single crystal furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102677156A CN102677156A (en) | 2012-09-19 |
| CN102677156B true CN102677156B (en) | 2015-07-15 |
Family
ID=46809685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210189952.3A Active CN102677156B (en) | 2012-06-11 | 2012-06-11 | Massive polycrystalline silicon charging device for Czochralski silicon single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102677156B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103310858B (en) * | 2013-06-28 | 2015-12-02 | 清华大学 | A kind of pellet charge device and method |
| CN104514031A (en) * | 2013-12-02 | 2015-04-15 | 浙江长兴众成电子有限公司 | Czochralski monocrystalline silicon doping apparatus and use method thereof |
| CN103882516B (en) * | 2014-03-25 | 2016-05-11 | 山西中电科新能源技术有限公司 | The online feed supplement method of polycrystalline silicon ingot or purifying furnace |
| CN103966666B (en) * | 2014-05-20 | 2016-06-15 | 江苏盎华光伏工程技术研究中心有限公司 | Polycrystalline silicon charge equipment and control method thereof |
| CN107815735A (en) * | 2016-09-14 | 2018-03-20 | 上海新昇半导体科技有限公司 | A kind of polysilicon secondary charging device and method |
| CN109306514B (en) * | 2017-07-27 | 2021-06-08 | 隆基绿能科技股份有限公司 | Material feeding device and crystal growth system |
| CN109306515B (en) * | 2017-07-27 | 2021-06-08 | 隆基绿能科技股份有限公司 | Material feeding device and crystal growth system |
| CN109011116B (en) * | 2018-07-06 | 2021-03-16 | 魏玉玲 | Gastroenterology gastric ulcer directly administers treatment indwelling equipment |
| CN114411241B (en) * | 2022-03-11 | 2023-12-22 | 浙江精工集成科技股份有限公司 | Single crystal furnace feeding device |
| CN114534867A (en) * | 2022-03-24 | 2022-05-27 | 辽宁五寰特种材料与智能装备产业技术研究院有限公司 | Automatic ball feeding device of mill |
| CN115961336A (en) * | 2022-12-13 | 2023-04-14 | 西安奕斯伟材料科技有限公司 | Single crystal furnace and secondary feeding method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1048526A (en) * | 1989-07-05 | 1991-01-16 | 日本钢管株式会社 | Apparatus for feeding granular silicon material |
| CN102418140A (en) * | 2011-12-09 | 2012-04-18 | 曾泽斌 | Czochralski silicon monocrystal growth furnace and method for filling silicon melts continuously |
| CN202671709U (en) * | 2012-06-11 | 2013-01-16 | 曾泽斌 | Chunk polysilicon feeding device for Czochralski silicon single crystal furnace |
-
2012
- 2012-06-11 CN CN201210189952.3A patent/CN102677156B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1048526A (en) * | 1989-07-05 | 1991-01-16 | 日本钢管株式会社 | Apparatus for feeding granular silicon material |
| CN102418140A (en) * | 2011-12-09 | 2012-04-18 | 曾泽斌 | Czochralski silicon monocrystal growth furnace and method for filling silicon melts continuously |
| CN202671709U (en) * | 2012-06-11 | 2013-01-16 | 曾泽斌 | Chunk polysilicon feeding device for Czochralski silicon single crystal furnace |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102677156A (en) | 2012-09-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102677156B (en) | Massive polycrystalline silicon charging device for Czochralski silicon single crystal furnace | |
| CN202380122U (en) | Straight-pull silicon single crystal growth furnace continuously filled with silicon melt | |
| CN102418140A (en) | Czochralski silicon monocrystal growth furnace and method for filling silicon melts continuously | |
| US20110036860A1 (en) | Single-crystal growth apparatus and raw-material supply method | |
| CN101435106A (en) | Production process and apparatus for monocrystalline silicon rod | |
| CN202671709U (en) | Chunk polysilicon feeding device for Czochralski silicon single crystal furnace | |
| CN109183140A (en) | Single crystal growing furnace and its continuous feeding | |
| CN110257901A (en) | The preparation process of major diameter high-efficiency N-type monocrystalline silicon | |
| CN201089803Y (en) | Charge pipe for elemental crystal furnace | |
| CN104313680A (en) | Vertical pipe furnace apparatus for crystal growth and application method thereof | |
| CN202671707U (en) | Secondary feeding device for vertical pulling silicon monocrystal | |
| CN104911694A (en) | Doping process for production of silicon single crystal rods | |
| CN202380124U (en) | Double-layer crucible used for growing czochralski silicon single crystal | |
| CN206680610U (en) | A kind of improved single crystal furnace structure and its application | |
| CN202202016U (en) | Single crystal furnace thermal field device capable of measuring distance between molten silicon liquid level and guide cylinder | |
| CN201321511Y (en) | New type crystal growing furnace | |
| CN203960392U (en) | The equipment of direct growth sapphire dome | |
| CN102409396A (en) | Double-layer crucible for growth of czochralski silicon single crystal | |
| CN207567377U (en) | monocrystalline silicon feeding device | |
| CN105951180B (en) | Polycrystalline silicon ingot or purifying furnace secondary charging device and polycrystalline cast ingot system | |
| KR101503237B1 (en) | Apparatus for Material Insert | |
| CN202610380U (en) | Thermal field lifting device of Czochralski single crystal furnace | |
| CN217104143U (en) | Thermal field structure of czochralski crystal growing furnace | |
| CN202220214U (en) | Secondary feeding device of czochralski crystal growing furnace | |
| CN201276607Y (en) | Feeder for monocrystal silicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220606 Address after: 325600 No. 211, Weishi 16th Road, Yueqing Economic Development Zone, Yueqing City, Wenzhou City, Zhejiang Province (in Beier Substation Electric Co., Ltd.) Patentee after: Zhejiang Jingtai Semiconductor Co.,Ltd. Address before: 310013 room 702, unit 1, building 67, Qiushi village, Xihu District, Hangzhou City, Zhejiang Province Patentee before: Zeng Zebin |
|
| TR01 | Transfer of patent right |