CN102637787B - Method for uninterrupted growth of high-quality InGaN/GaN multi-quantum well (MQW) - Google Patents

Abstract

The invention discloses a method for growing high-quality InGaN/GaN multiple quantum wells without interruption, comprising: epitaxially growing uGaN on a sapphire pattern substrate, growing nGaN on the uGaN, and then growing an MQW stress release layer on the nGaN; Epitaxial growth of InGaN/GaN multiple quantum wells on the stress release layer; repeated growth of multiple InGaN/GaN multiple quantum wells on the InGaN/GaN multiple quantum wells; growth of GaN-based LEDs on the multiple InGaN/GaN multiple quantum wells pAlGaN and pGaN. The present invention selects the metal-organic chemical vapor deposition method, utilizes the growth of GaN during the process of switching quantum wells and barrier growth conditions, that is, performs quantum well growth without interruption, shortens the time required for multi-quantum well growth, and greatly improves production efficiency. At the same time, high-quality InGaN/GaN multi-quantum well LED epitaxial wafers are obtained.

Description

A Method for Uninterrupted Growth of High Quality InGaN/GaN Multiple Quantum Wells

technical field

The invention relates to the technical field of quantum well growth, in particular to a method for growing high-quality InGaN/GaN multiple quantum wells without interruption, which is suitable for commercial production of high-brightness GaN-based LED epitaxial wafers.

Background technique

GaN-based LEDs have now entered the stage of commercial production. How to shorten the growth time of GaN-based LED epitaxial wafers while obtaining high-quality epitaxial wafers to increase production capacity has become a research focus. At present, MOCVD is used for commercial production of GaN-based LED epitaxial wafers. Due to the differences in the growth temperature and atmosphere between InGaN quantum wells and GaN quantum barriers, there is a lot of time spent in switching the temperature and atmosphere required for the growth of quantum wells and quantum barriers during the growth of InGaN/GaN multiple quantum wells. Quality generally does not undergo epitaxial growth, so there is intermittent growth during the growth of quantum wells, and the time utilization rate is not high. At present, in the MOCVD epitaxial growth GaN-based LED manufacturing process, the growth time of MQWs occupies half of the time required for the growth of GaN-based LED epitaxial wafers. How to shorten the MQWs growth time has become a major factor in improving the production efficiency of GaN-based LED epitaxial wafers.

Contents of the invention

(1) Technical problems to be solved

In view of this, the main purpose of the present invention is to provide a method for growing high-quality InGaN/GaN multiple quantum wells without interruption, to shorten the time required for the growth of multiple quantum wells, improve production efficiency, and obtain high-quality InGaN/GaN multiple quantum wells well for the LED epiwafer.

(2) Technical solution

In order to achieve the above object, the present invention provides a method for growing high-quality InGaN/GaN multiple quantum wells without interruption, the method comprising:

Epitaxially grow uGaN1 on the sapphire pattern substrate, then grow nGaN2 on uGaN1, and then grow MQW stress release layer 3 on nGaN2;

Epitaxial growth of InGaN/GaN multiple quantum wells on the MQW stress release layer 3;

Repeated growth of multiple InGaN/GaN multiple quantum wells on InGaN/GaN multiple quantum wells;

The pAlGaN12 and pGaN13 required for GaN-based LEDs are grown on the multiple InGaN/GaN multiple quantum wells.

In the above scheme, the MQW stress release layer 3 adopts a superlattice structure of InGaN and GaN, including m indium gallium nitride (In _y Ga _1-y N) quantum wells and m+1 gallium nitride (GaN ) quantum barrier, each In _y Ga _1-y N quantum well has a GaN quantum barrier on the upper and lower sides, where m≥1, 0≤y≤1; the thickness of GaN is in arrive Between, the thickness of InGaN is in arrive between.

In the above scheme, the InGaN/GaN multiple quantum wells sequentially include an InGaN quantum well 4, a first GaN cladding layer 5, a heating layer 6, a first temperature stabilizing layer 7, a quantum barrier (QB) 8, a cooling layer 9, The second temperature stabilizing layer 10 and the second GaN capping layer 11 . The epitaxial growth of InGaN/GaN multiple quantum wells on the MQW stress release layer 3 includes: epitaxially growing InGaN quantum wells 4 on the MQW stress release layer 3; growing a first GaN cladding layer 5 on the InGaN quantum wells 4; A temperature rising layer 6 is grown on the GaN cladding layer 5; a first temperature stabilizing layer 7 is grown on the temperature rising layer 6; a GaN quantum barrier 8 is grown on the first temperature stabilizing layer 7; a cooling layer 9 is grown on the GaN quantum barrier 8; growing a second temperature stabilizing layer 10 on the cooling layer 9; and growing a second GaN capping layer 11 on the second temperature stabilizing layer 10 to form an InGaN/GaN multiple quantum well.

In the above scheme, the InGaN quantum well 4 is epitaxially grown on the MQW stress release layer 3, and _high -purity N is used as the carrier gas, with a thickness of Between, the quantum well growth temperature (QW_T) is between 750°C and 900°C, the In composition is between 0% and 50%, and SiH ₄ is selected for n-type doping, and the doping concentration is between 1.0E+17cm ^- Between ³ and 5.0E+19cm ^-3 .

In the above scheme, the first GaN cladding layer 5 is grown on the InGaN quantum well 4, and _high -purity N is used as the carrier gas, with a thickness of Between, the growth temperature is the same as that of QW_T, SiH ₄ can be used for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 .

In the above-mentioned scheme, the temperature raising layer 6 is grown on the first GaN cladding layer 5, GaN material is selected, and high-purity _N2 and high-purity _H2 mixed gas is introduced at the same time as the carrier gas, and the ratio of _N2 and _H2 is: 1= ＜N ₂ /H ₂ ＜=100, triethylgallium (TEGa) is used as gallium source, the thickness is During the growth process, the temperature is always in a state of change. The temperature rises from the initial QW_T to the quantum barrier growth temperature (QB_T). QB_T is between 800°C and 1000°C, which is more than 40°C higher than QB_T. SiH ₄ can be used for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 .

In the above scheme, the first temperature stabilizing layer 7 is grown on the temperature raising layer 6, GaN material is selected, and the mixed gas of high-purity _N2 and high-purity _H2 is used as the carrier gas, and the ratio of _N2 and _H2 is: 1=< _N2 /H ₂ <=100, the set temperature is always kept at QB_T during the growth process, and the time lasts for 10s~600s. SiH ₄ can be used for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 .

In the above scheme, the GaN quantum barrier 8 is grown on the first temperature stabilizing layer 7, the GaN material is selected, and high-purity _N2 and high-purity _H2 mixed gas is introduced as the carrier gas at the same time, and the ratio of _N2 and _H2 is: 1 ＝＜N ₂ /H ₂ ＜＝100, the thickness is arrive Between, the growth temperature is kept at QB_T. SiH ₄ can be used for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 .

In the above scheme, the cooling layer 9 is grown on the GaN quantum barrier 8, the GaN material is selected, and the mixed gas of high-purity _N2 and high-purity _H2 is introduced at the same time as the carrier gas, and the ratio of _N2 and _H2 is: 1=<N ₂ /H ₂ ＜=100, the thickness is arrive Between, the growth temperature drops from QB_T to QW_T. SiH ₄ can be used for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 .

In the above scheme, the second temperature stabilizing layer 10 is grown on the cooling layer 9, GaN material is selected, and high-purity _N2 and high-purity _H2 mixed gas is introduced as the carrier gas at the same time, and the ratio of _N2 and _H2 is: 1= ＜N ₂ /H ₂ ＜=100, the thickness is arrive Between, the growth temperature is kept at QW_T, and the time lasts from 10s to 600s. SiH ₄ can be used for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 .

In the above scheme, the second GaN capping layer 11 is grown on the second temperature stabilizing layer 10, and high-purity N2 is used as the carrier gas, with a thickness of Between, the growth temperature is the same as QW_T.

In the above solution, multiple InGaN/GaN multiple quantum wells are repeatedly grown on the InGaN/GaN multiple quantum wells, the number of InGaN/GaN multiple quantum wells is N, and 1=<N<=25.

(3) Beneficial effects

As can be seen from the foregoing technical solutions, the present invention has the following beneficial effects:

The method for growing high-quality InGaN/GaN multi-quantum wells without interruption provided by the present invention adopts the metal organic chemical vapor deposition (MOCVD) method, and utilizes the method of maintaining GaN growth in the process of switching quantum wells and barrier growth conditions, that is, performing quantum well The uninterrupted growth shortens the time required for the growth of multiple quantum wells, greatly improves the production efficiency, and at the same time obtains high-quality InGaN/GaN multi-quantum well LED epitaxial wafers.

Description of drawings

1 is a flowchart of a method for growing high-quality InGaN/GaN multiple quantum wells without interruption according to an embodiment of the present invention;

2 is a schematic diagram of an epitaxial structure of an InGaN/GaN multi-quantum well LED grown without interruption according to an embodiment of the present invention;

Fig. 3 is the PL spectrum of the GaN-based blue LED epitaxial wafer obtained by the present invention according to an embodiment of the present invention;

Fig. 4 is an ω-2θ XRD diffraction spectrum of a GaN-based blue LED epitaxial wafer (002) direction obtained by using the present invention according to an embodiment of the present invention.

Detailed ways

In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

As shown in FIG. 1, FIG. 1 is a flow chart of a method for growing high-quality InGaN/GaN multiple quantum wells without interruption according to an embodiment of the present invention. The method includes:

Step 1: Epitaxially grow undoped gallium nitride (uGaN)1 on a sapphire pattern substrate, then grow n-type gallium nitride (nGaN)2 on uGaN1, and then grow InGaN/GaN multiple quantum wells (MQW) on nGaN2 ) stress release layer 3;

Step 2: epitaxially grow InGaN/GaN multiple quantum wells on the MQW stress release layer 3;

Step 3: repeatedly growing multiple InGaN/GaN multiple quantum wells on the InGaN/GaN multiple quantum wells;

Step 4: growing p-type aluminum gallium nitride (pAlGaN) 12 and p-type gallium nitride (pGaN) 13 required for GaN-based LEDs on the multiple InGaN/GaN multiple quantum wells.

The MQW stress release layer 3 described in step 1 adopts a superlattice structure of InGaN and GaN, including m indium gallium nitride (In _y Ga _1-y N) quantum wells and m+1 gallium nitride (GaN) Quantum barriers, each In _y Ga _1-y N quantum well has a GaN quantum barrier on the upper and lower sides, where m≥1, 0≤y≤1; the thickness of GaN is arrive Between, the thickness of InGaN is in arrive between.

The InGaN/GaN multi-quantum well described in step 2 includes, from bottom to top, an InGaN quantum well 4, a first GaN cladding layer 5, a heating layer 6, a first temperature stabilizing layer 7, a quantum barrier (QB) 8, a cooling layer 9, The second temperature stabilizing layer 10 and the second GaN capping layer 11 . The epitaxial growth of InGaN/GaN multiple quantum wells on the MQW stress release layer 3 includes: epitaxially growing InGaN quantum wells 4 on the MQW stress release layer 3; growing a first GaN cladding layer 5 on the InGaN quantum wells 4; A temperature rising layer 6 is grown on the GaN cladding layer 5; a first temperature stabilizing layer 7 is grown on the temperature rising layer 6; a GaN quantum barrier 8 is grown on the first temperature stabilizing layer 7; a cooling layer 9 is grown on the GaN quantum barrier 8; growing a second temperature stabilizing layer 10 on the cooling layer 9; and growing a second GaN capping layer 11 on the second temperature stabilizing layer 10 to form an InGaN/GaN multiple quantum well.

Wherein, the InGaN quantum well 4 is epitaxially grown on the MQW stress release layer 3, and _high -purity N is selected as the carrier gas, and the thickness is between Between, the quantum well growth temperature (QW_T) is between 750°C and 900°C, the In composition is between 0% and 50%, and SiH ₄ is selected for n-type doping, and the doping concentration is between 1.0E+17cm ^- Between ³ and 5.0E+19cm ^-3 .

The first GaN capping layer 5 is grown on the InGaN quantum well 4, and _high -purity N is used as the carrier gas, with a thickness of Between, the growth temperature is the same as that of QW_T, SiH ₄ can be used for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 .

The temperature raising layer 6 is grown on the first GaN capping layer 5, GaN material is selected, and high-purity N ₂ and high-purity H ₂ mixed gas is introduced as the carrier gas at the same time, and the ratio of N ₂ and H ₂ is: 1=<N ₂ / H ₂ ＜=100, triethylgallium (TEGa) as gallium source, thickness in During the growth process, the temperature is always in a state of change. The temperature rises from the initial QW_T to the quantum barrier growth temperature (QB_T). QB_T is between 800°C and 1000°C, which is more than 40°C higher than QB_T. SiH ₄ can be used for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 .

The first temperature stabilizing layer 7 is grown on the temperature raising layer 6, using GaN material, high-purity N ₂ and high-purity H ₂ mixed gas as carrier gas, the ratio of N ₂ and H ₂ : 1=<N ₂ /H ₂ < =100, the set temperature is always kept at QB_T during the growth process, and the time lasts from 10s to 600s. SiH ₄ can be used for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 .

The GaN quantum barrier 8 is grown on the first temperature stabilization layer 7, GaN material is selected, and high-purity N ₂ and high-purity H ₂ mixed gas is introduced as the carrier gas at the same time, and the ratio of N ₂ and H ₂ is: 1=<N ₂ /H ₂ ＜=100, the thickness is arrive Between, the growth temperature is kept at QB_T. SiH ₄ can be used for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 .

The cooling layer 9 is grown on the GaN quantum barrier 8, the GaN material is selected, and the mixed gas of high-purity N ₂ and high-purity H ₂ is introduced as the carrier gas at the same time, and the ratio of N ₂ and H ₂ is: 1=<N ₂ /H ₂ ＜=100, the thickness is arrive Between, the growth temperature drops from QB_T to QW_T. SiH ₄ can be used for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 .

The second temperature stabilizing layer 10 is grown on the cooling layer 9, GaN material is selected, and high-purity N ₂ and high-purity H ₂ mixed gas is introduced as the carrier gas at the same time, and the ratio of N ₂ and H ₂ is: 1=<N ₂ / H ₂ ＜=100, the thickness is arrive Between, the growth temperature is kept at QW_T, and the time lasts from 10s to 600s. SiH ₄ can be used for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 .

The second GaN capping layer 11 is grown on the second temperature stabilizing layer 10, using _high -purity N as carrier gas, with a thickness of Between, the growth temperature is the same as QW_T.

In step 3, multiple InGaN/GaN multiple quantum wells are repeatedly grown on the InGaN/GaN multiple quantum wells, the number of InGaN/GaN multiple quantum wells is N, and 1=<N<=25.

Example

Utilize MOCVD equipment (Crius 31 commercial machines of Aixtron Company), select high-purity _NH3 as N source, high-purity _N2 and _H2 as carrier gas, trimethylindium (TMIn) and trimethylaluminum (TMAl) respectively As the source of indium and aluminum, trimethylgallium (TMGa) as the source of gallium for GaN materials, triethylgallium (TEGa) as the source of gallium for InGaN/GaN multiple quantum wells, and silane (SiH ₄ ) as the N-type dopant , Dioxocene Mg (Cp2Mg) is a P-type dopant. Epitaxially grow uGaN1 on the sapphire pattern substrate, then grow nGaN2 on uGaN1, and then grow MQW stress release layer 3 on nGaN2, the MQW stress release layer 3 adopts InGaN/GaN superlattice structure SLs, SLs logarithm is 4, the growth temperature is 900°C, and the thickness of InGaN in the InGaN/GaN superlattice structure SLs is The thickness of GaN is

High-purity N ₂ is selected as the carrier gas, and the InGaN quantum well 4 is epitaxially grown on the MQW stress release layer 3 . The growth temperature is 800°C, and the thickness is Next, the first GaN capping layer 5 is grown on the InGaN quantum well 4 at the same temperature of 800°C and the thickness is Then grow the temperature raising layer 6 on the first GaN capping layer 5, the growth temperature is increased from 800°C to 890°C, the growth atmosphere is a mixed gas of _N2 and _H2 , the ratio of _N2 / _H2 is 8, and Si doping is carried out at the same time. The doping concentration is 2E+17cm ^-3 . Next, the first temperature stabilizing layer 7 is grown on the temperature raising layer 6 for 60 seconds, and Si is continuously injected, and the n-type doping concentration is 2E+17cm ⁻³ . Next, a GaN quantum barrier 8 is grown on the first temperature stabilizing layer 7 at a temperature of 890° C. and a growth thickness of The n-type doping concentration is 4E+17cm ^-3 . Next, a cooling layer 9 is grown on the GaN quantum barrier 8, and the temperature drops from 890°C to 800°C. Next, a second temperature stabilizing layer 10 is grown on the cooling layer 9 for 60 s. Next, the second GaN capping layer 11 is grown on the second temperature stabilizing layer 10, using high-purity _N2 as the carrier gas, stopping the introduction of _H2 , and the growth thickness is Finally, an InGaN/GaN multi-quantum well is formed, and the InGaN/GaN multi-quantum well includes an InGaN quantum well 4, a first GaN cladding layer 5, a heating layer 6, a first temperature stabilizing layer 7, and a quantum barrier (QB) from bottom to top. 8. A cooling layer 9 , a second temperature stabilizing layer 10 and a second GaN capping layer 11 .

Repeat the above steps 15 times, that is, grow 15 InGaN/GaN multiple quantum wells. Then pAlGaN12 and pGaN13 required for GaN-based LEDs are grown on the 15 InGaN/GaN multiple quantum wells, as shown in FIG. 2 .

The obtained high-quality GaN-based LED PL spectrum is shown in Figure 3, and it can be seen that the half width is only 20nm. Fig. 4 is the XRD diffraction spectrum of the prepared high-quality GaN-based LED (002) direction. It can be seen that the InGaN/GaN multi-quantum well satellite peak is obvious, and the fifth satellite peak can be seen, indicating that the method is used to prepare the obtained InGaN/GaN has better multi-quantum quality.

The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims (11)

1. A method for growing high-quality InGaN/GaN multiple quantum wells without interruption, characterized in that the method comprises: Epitaxial growth of uGaN (1) on a sapphire pattern substrate, followed by growth of nGaN (2) on uGaN (1), and then growth of an MQW stress release layer (3) on nGaN (2); Epitaxial growth of InGaN/GaN multiple quantum wells on the MQW stress release layer (3); Repeated growth of multiple InGaN/GaN multiple quantum wells on InGaN/GaN multiple quantum wells; pAlGaN(12) and pGaN(13) required for growing GaN-based LEDs on the multiple InGaN/GaN multiple quantum wells; Wherein, the InGaN/GaN multi-quantum well comprises, from bottom to top, an InGaN quantum well (4), a first GaN cladding layer (5), a GaN layer (6) grown at elevated temperature, and a first GaN layer (7) grown at a stable temperature. , a quantum barrier (8), a GaN layer (9) grown at reduced temperature, a second GaN layer (10) and a second GaN capping layer (11) grown at a stable temperature; the epitaxial growth on the MQW stress release layer (3) InGaN/GaN multiple quantum wells, including: epitaxially growing InGaN quantum wells (4) on the MQW stress release layer (3); growing a first GaN capping layer (5) on the InGaN quantum well (4); growing a temperature-increased GaN layer (6) on the first GaN capping layer (5); growing a first temperature-stable GaN layer (7) on the temperature-increased-grown GaN layer (6); growing a GaN quantum barrier (8) on the first stable temperature grown GaN layer (7); growing a temperature-reduced GaN layer (9) on the GaN quantum barrier (8); growing a second temperature-stabilized GaN layer (10) on the GaN layer (9) grown at reduced temperature; and A second GaN cladding layer (11) is grown on the second temperature-stabilized GaN layer (10) to form an InGaN/GaN multi-quantum well. 2. the method for growing high-quality InGaN/GaN multiple quantum wells without interruption according to claim 1, is characterized in that, what described MQW stress release layer (3) adopted is the superlattice structure of InGaN and GaN, comprises m Indium gallium nitride (In _y Ga _1-y N) quantum wells and m+1 gallium nitride (GaN) quantum barriers, each In _y Ga _1-y N quantum well has a GaN quantum barrier on the upper and lower sides , where m≥1, 0≤y≤1; the thickness of GaN is in arrive Between, the thickness of InGaN is in arrive between. 3. The method for growing high-quality InGaN/GaN multiple quantum wells without interruption according to claim 1, characterized in that, the epitaxial growth InGaN quantum wells (4) on the MQW stress release layer (3) is selected from high-purity N ₂ as carrier gas, the thickness is Between, the quantum well growth temperature (QW_T) is between 750°C and 900°C, the In composition is between 0% and 50%, and SiH ₄ is selected for n-type doping, and the doping concentration is between 1.0E+17cm ^- Between ³ and 5.0E+19cm ^-3 . 4. the method for growing high-quality InGaN/GaN multiple quantum wells without interruption according to claim 1, is characterized in that, the first GaN capping layer (5) of described growth on InGaN quantum well (4), selects high-purity N ₂ as carrier gas, the thickness is Between, the growth temperature is between 750°C and 900°C, SiH ₄ is selected for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 . 5. the method for growing high-quality InGaN/GaN multiple quantum wells without discontinuity according to claim 1, is characterized in that, the GaN layer (6) of described growth temperature rise growth on the first GaN capping layer (5), selects For GaN materials, high-purity N ₂ and high-purity H ₂ mixed gas are introduced at the same time as the carrier gas, the ratio of N ₂ and H2: 1=<N ₂ /H ₂ ＜=100, triethylgallium (TEGa) as the gallium source, thickness in During the growth process, the temperature is always in a state of change. The temperature rises from the initial quantum well growth temperature to the quantum barrier growth temperature (QB_T). Higher than 40°C; choose SiH ₄ for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 . 6. the method for growing high-quality InGaN/GaN multiple quantum wells without discontinuity according to claim 1, is characterized in that, the GaN layer (7) of the first temperature-stabilized growth is grown on the GaN layer (6) of temperature-raising growth ), choose GaN material, high-purity N ₂ and high-purity H ₂ mixed gas as the carrier gas, the ratio of N ₂ and H ₂ : 1=<N ₂ /H ₂ ＜=100, the set temperature during the growth process is always kept at the quantum The barrier growth temperature lasts from 10s to 600s; SiH ₄ is selected for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 . 7. The method for growing high-quality InGaN/GaN multiple quantum wells without interruption according to claim 1, characterized in that, the GaN quantum barrier (8) is grown on the GaN layer (7) of the first stable temperature growth, Choose GaN material, and feed high-purity N ₂ and high-purity H ₂ mixed gas as carrier gas at the same time, the ratio of N ₂ and H ₂ : 1=<N ₂ /H ₂ ＜=100, the thickness is at arrive In between, the growth temperature is maintained at the quantum barrier growth temperature; SiH ₄ is selected for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 . 8. The method for growing high-quality InGaN/GaN multiple quantum wells without discontinuity according to claim 1, characterized in that, the GaN layer (9) grown on the GaN quantum barrier (8) is grown at a lower temperature, and the GaN material is selected , while feeding high-purity N ₂ and high-purity H ₂ mixed gas as carrier gas, the ratio of N ₂ and H ₂ : 1=<N ₂ /H ₂ ＜=100, the thickness is at arrive In between, the growth temperature drops from the quantum barrier growth temperature to the quantum well growth temperature; SiH ₄ is selected for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 . 9. the method for growing high-quality InGaN/GaN multiple quantum wells without discontinuity according to claim 1, is characterized in that, the GaN layer (10) of the second stable temperature growth of described growth on the GaN layer (9) of cooling growth ), choose GaN material, and feed high-purity N ₂ and high-purity H ₂ mixed gas as carrier gas at the same time, the ratio of N ₂ and H ₂ : 1=<N ₂ /H ₂ ＜=100, the thickness is at arrive In between, the growth temperature is kept at the quantum well growth temperature, and the time lasts from 10s to 600s; SiH ₄ is selected for n-type doping, and the doping concentration is between 1.0E+17cm ^-3 and 5.0E+19cm ^-3 . 10. the method for growing high-quality InGaN/GaN multiple quantum wells without interruption according to claim 1, is characterized in that, the second GaN capping layer (11) is grown on the GaN layer (10) of the second stable temperature growth ), using high-purity N ₂ as carrier gas, with a thickness of Between, the growth temperature is the same as the quantum well growth temperature. 11. The method for growing high-quality InGaN/GaN multiple quantum wells without interruption according to claim 1, characterized in that, repeatedly growing a plurality of InGaN/GaN multiple quantum wells on the InGaN/GaN multiple quantum wells, InGaN/GaN multiple quantum wells The number of GaN multiple quantum wells is N, and 1=<N<=25.