CN102623323A - Semiconductor wafer liquid-spraying etching system and method - Google Patents
Semiconductor wafer liquid-spraying etching system and method Download PDFInfo
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- CN102623323A CN102623323A CN2012100985076A CN201210098507A CN102623323A CN 102623323 A CN102623323 A CN 102623323A CN 2012100985076 A CN2012100985076 A CN 2012100985076A CN 201210098507 A CN201210098507 A CN 201210098507A CN 102623323 A CN102623323 A CN 102623323A
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- semiconductor wafer
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- spraying
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 238000005530 etching Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000005507 spraying Methods 0.000 title claims abstract description 16
- 239000000243 solution Substances 0.000 claims description 19
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 230000005540 biological transmission Effects 0.000 claims description 7
- 239000007788 liquid Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 35
- 239000007921 spray Substances 0.000 description 7
- 230000005484 gravity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
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Abstract
The invention relates to a liquid-spraying etching system and method of a semiconductor wafer. The semiconductor wafer liquid-spraying etching system comprises a carrying-platform device and a spraying device, wherein the carrying-platform device is used for fixing the semiconductor wafer when the surface to be etched of the semiconductor wafer faces downwards, and controlling rotation of the semiconductor wafer; the spraying device is placed below the carrying-platform device and comprises a plurality of spraying nozzles and a plurality of controlling pieces; all the spraying nozzles are used for spraying etching liquid on the corresponding positions of the surface to be etched on the semiconductor wafer upwards; the plurality of controlling pieces correspond to the plurality of spraying nozzles; and each controlling piece is used for controlling the spraying flow rate of the etching liquid of the spraying nozzle corresponding to the control piece. The liquid-spraying etching system and method have good etching uniformity and can improve the quality of products.
Description
Technical field
The present invention relates to semiconductor wafer etch system and method, relate in particular to a kind of semiconductor wafer hydrojet etch system and method.
Background technology
In chip manufacturing proces, will pass through etch process, be about to certain material, for example photoresist removes from disk surfaces, and a kind of method of etch process is to be employed in disk surfaces to spray etching solution to remove the material of disk surfaces.With reference to figure 1 and Fig. 2, the way that this method is traditional is that disk 11 is fixed on the machine table 15, and disk 11 tops have nozzle 13 and etching solution sprayed etching solution downwards, the centrifugal force that produces through rotary wafer 11 with etching solution to outdiffusion.
This method is brought the problem of an etch uniformity difference; For example, in Fig. 1, the surface of disk 11 is not fully level and smooth usually; But have certain uneven; When etching solution was ejected into disk 11 surface, the dosage at recess and protruding place was different and cause the etching degree inhomogeneous, and serious near the position etching of spray site.And for example shown in Figure 2, when having figure salient point 17 on the disk 11, since more near the etching solution of spray site position, serious corner cut (being nearly corner cut) 19 caused easily from the nearer salient point of spray site, influence the quality of chip manufacture.
And, when the diverse location of different disks or disk is carried out etching, need the constantly position of adjustment nozzle, cumbersome, can not in time make adjustment as required.
Summary of the invention
Provide hereinafter about brief overview of the present invention, so that the basic comprehension about some aspect of the present invention is provided.Should be appreciated that this general introduction is not about exhaustive general introduction of the present invention.It is not that intention is confirmed key of the present invention or pith, neither be intended to limit scope of the present invention.Its purpose only is to provide some notion with the form of simplifying, with this as the preorder in greater detail of argumentation after a while.
A main purpose of the present invention is to provide semiconductor wafer hydrojet etch system and the method that a kind of etching uniformity is good, can in time adjust injection stream according to the needs of location of etch.
For realizing above-mentioned purpose, the invention provides a kind of semiconductor wafer hydrojet etch system, comprising:
Bearing table device, be used for semiconductor wafer treat that etched surfaces down the time fixing semiconductor wafer and control semiconductor wafer rotation; And
Injection apparatus; Be placed on the below of bearing table device; Injection apparatus comprises a plurality of nozzles and a plurality of control piece; Each nozzle is used for upwards spraying etching solution to the correspondence position of treating etched surfaces of semiconductor wafer, and a plurality of control pieces are corresponding one by one with a plurality of nozzles, and each control piece is used to control the etching solution injection flow of the nozzle corresponding with this control piece.
Alternatively, a plurality of nozzles are arranged in the form of a ring.
Alternatively, a plurality of nozzles are the arrangement of " X " shape.
Alternatively, a plurality of nozzles are the clathrate arrangement.
Alternatively, each control piece is the electromagnetically operated valve that is arranged on the transmission pipeline of corresponding nozzle.
For realizing above-mentioned purpose, the present invention also provides a kind of semiconductor wafer hydrojet engraving method, may further comprise the steps:
The etched surfaces of treating of semiconductor wafer is fixed on the bearing table device down, and through the rotation of bearing table device control semiconductor wafer; And
Regulate the flow of each nozzle on injection apparatus through each control piece of injection apparatus, and upwards the correspondence position of treating etched surfaces of semiconductor wafer is sprayed etching solution through a plurality of nozzles.
Alternatively, this semiconductor wafer hydrojet engraving method is through the flow of the solenoid control nozzle of operation setting on the transmission pipeline of each nozzle.
The present invention treats that through what make semiconductor wafer etched surfaces down; Upwards the etched surfaces of treating of semiconductor wafer is sprayed etching solution; Because the effect of gravity; Avoided the uneven problem of the uneven etching that brings of etched surfaces of treating, also avoided the interior corner cut problem of the figure salient point on the semiconductor wafer simultaneously owing to semiconductor wafer.Because the present invention has adopted a plurality of nozzle needles that semiconductor wafer is treated that the diverse location of etched surfaces sprays; Avoided spraying the problem of the far and near etching degree varies of bringing by single-nozzle; And each nozzle all is provided with the control piece of control flow; The flow of arbitrary nozzle be can in time adjust according to product needed, etching efficiency and product quality promoted.
Description of drawings
With reference to below in conjunction with the explanation of accompanying drawing, can understand above and other purpose, characteristics and advantage of the present invention to the embodiment of the invention with being more prone to.Parts in the accompanying drawing are just in order to illustrate principle of the present invention.In the accompanying drawings, identical or similar techniques characteristic or parts will adopt identical or similar Reference numeral to represent.
Fig. 1 and Fig. 2 are the work sketch map of existing semiconductor wafer hydrojet etch system.
Fig. 3 is the structural representation of a kind of execution mode of semiconductor wafer hydrojet etch system of the present invention.
Fig. 4, Fig. 5, Fig. 6 are respectively the arrangement mode sketch map of the nozzle among Fig. 3.
Fig. 7 is the flow chart of a kind of execution mode of semiconductor wafer hydrojet engraving method of the present invention.
Embodiment
Embodiments of the invention are described with reference to the accompanying drawings.Element of in an accompanying drawing of the present invention or a kind of execution mode, describing and characteristic can combine with element and the characteristic shown in one or more other accompanying drawing or the execution mode.Should be noted that for purpose clearly, omitted the parts that have nothing to do with the present invention, those of ordinary skills are known and the expression and the description of processing in accompanying drawing and the explanation.
With reference to figure 3, a kind of execution mode of semiconductor wafer hydrojet etch system of the present invention comprises bearing table device 20 and injection apparatus 30.Bearing table device 10 be used for semiconductor wafer 11 treat that etched surfaces down the time fixing semiconductor wafer 11 and control semiconductor wafer 11 rotation.Injection apparatus 30 is placed on the below of bearing table device 20, comprises a plurality of nozzles 31 and a plurality of control pieces, and each nozzle 31 is used for upwards spraying etching solution to the correspondence position of treating etched surfaces of semiconductor wafer 11.A plurality of control pieces are corresponding one by one with above-mentioned a plurality of nozzles 31, and each control piece is used to control the etching solution injection flow of the nozzle corresponding with this control piece 31.Through operating each control piece, can stop to spray etching solution to not needing etched position, perhaps adjust the emitted dose of etching solution as required, can in time adjust as required the flow of corresponding nozzle 31.
Alternatively, above-mentioned a plurality of nozzles 31 can be different shape to be arranged, and for example the clathrate that is that is among the arrangement of " X " shape and Fig. 6 among arrangement, the Fig. 5 in the form of a ring among Fig. 4 is arranged, and in other embodiments, above-mentioned a plurality of nozzles 31 also can other shape be arranged.
Alternatively, each control piece is the electromagnetically operated valve 33 that is arranged on the transmission pipeline (like the transmission pipeline among Fig. 3 32) of corresponding nozzle 31.
With reference to figure 7, the present invention also provides a kind of semiconductor wafer hydrojet engraving method based on above-mentioned semiconductor wafer hydrojet etch system, and its a kind of execution mode may further comprise the steps:
Step S1: the etched surfaces of treating of semiconductor wafer 11 is fixed on the bearing table device 20 down, and through 11 rotations of bearing table device 20 control semiconductor wafers.
Step S2: regulate the flow of each nozzle 31 on injection apparatus 30 through each control piece of injection apparatus 30, and upwards the correspondence position of treating etched surfaces of semiconductor wafer 11 is sprayed etching solution through above-mentioned a plurality of nozzles 31.
Alternatively, among the step S2, this semiconductor wafer hydrojet engraving method is through the flow of the electromagnetically operated valve 33 control nozzles of operation setting on the transmission pipeline 32 of each nozzle 31.
In above-mentioned semiconductor wafer hydrojet etch system and method; Because the effect of gravity; Etching solution can not accumulate at the recess of treating etched surfaces or figure salient point root; Can avoid the problem of the uneven etching degree varies of bringing and the problem of the nearly corner cut of salient point, spray, overcome because the over etching that closely brings apart from nozzle or because the problem of the undercut that far brings apart from nozzle through a plurality of nozzles corresponding to diverse location; When being applied to disk, can avoiding producing corner cut and influence product quality in the salient point position with figure salient point.
In system of the present invention, obviously, each parts reconfigures after can decomposing, make up and/or decomposing.These decomposition and/or reconfigure and to be regarded as equivalents of the present invention.In the above in the description to the specific embodiment of the invention; Characteristic to a kind of execution mode is described and/or illustrated can be used in one or more other execution mode with identical or similar mode; Combined with the characteristic in other execution mode, or substitute the characteristic in other execution mode.
Should stress that term " comprises/comprise " existence that when this paper uses, refers to characteristic, key element, step or assembly, but not get rid of the existence of one or more further feature, key element, step or assembly or additional.
Though specified the present invention and advantage thereof, be to be understood that and under not exceeding, can carry out various changes, alternative and conversion the situation of the appended the spirit and scope of the present invention that claim limited.And scope of the present invention is not limited only to the specific embodiment of the described process of specification, system, means, method and step.The one of ordinary skilled in the art will readily appreciate that from disclosure of the present invention, can use according to the present invention and carry out and process, system, means, method or step said essentially identical function of corresponding embodiment or acquisition result essentially identical with it, existing and that will be developed in the future.Therefore, appended claim is intended in their scope, comprise such process, system, means, method or step.
Claims (7)
1. a semiconductor wafer hydrojet etch system is characterized in that, comprising:
Bearing table device, be used for semiconductor wafer treat that etched surfaces down the time fixing said semiconductor wafer and control said semiconductor wafer rotation; And
Injection apparatus; Be placed on the below of said bearing table device; Said injection apparatus comprises a plurality of nozzles and a plurality of control piece; Each nozzle is used for upwards spraying etching solution to the correspondence position of treating etched surfaces of said semiconductor wafer, and said a plurality of control pieces are corresponding one by one with said a plurality of nozzles, and each control piece is used to control the etching solution injection flow of the nozzle corresponding with this control piece.
2. semiconductor wafer hydrojet etch system as claimed in claim 1 is characterized in that: said a plurality of nozzles are arranged in the form of a ring.
3. semiconductor wafer hydrojet etch system as claimed in claim 1 is characterized in that: said a plurality of nozzles are " X " shape and arrange.
4. semiconductor wafer hydrojet etch system as claimed in claim 1 is characterized in that: said a plurality of nozzles are clathrate and arrange.
5. like each described semiconductor wafer hydrojet etch system of claim 1-4, it is characterized in that each said control piece is the electromagnetically operated valve that is arranged on the transmission pipeline of corresponding nozzle.
6. the semiconductor wafer hydrojet engraving method based on the arbitrary described semiconductor wafer hydrojet etch system of claim 1-5 is characterized in that, comprising:
The etched surfaces of treating of semiconductor wafer is fixed on the bearing table device down, and controls said semiconductor wafer rotation through said bearing table device; And
Regulate the flow of each nozzle on injection apparatus through each control piece of injection apparatus, and upwards the correspondence position of treating etched surfaces of said semiconductor wafer is sprayed etching solution through a plurality of nozzles.
7. semiconductor wafer hydrojet engraving method as claimed in claim 6 is characterized in that, said semiconductor wafer hydrojet engraving method is through the flow of the solenoid control said nozzle of operation setting on the transmission pipeline of each said nozzle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100985076A CN102623323A (en) | 2012-04-01 | 2012-04-01 | Semiconductor wafer liquid-spraying etching system and method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012100985076A CN102623323A (en) | 2012-04-01 | 2012-04-01 | Semiconductor wafer liquid-spraying etching system and method |
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| CN102623323A true CN102623323A (en) | 2012-08-01 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103219232A (en) * | 2013-03-15 | 2013-07-24 | 上海华力微电子有限公司 | Wet etching machine table device |
| CN106711279A (en) * | 2016-11-29 | 2017-05-24 | 梁结平 | Solar cell panel electrode removing device and method |
| CN106784142A (en) * | 2016-12-16 | 2017-05-31 | 成都佰思汇信科技有限责任公司 | Solar battery slice etching device and method |
| CN108680575A (en) * | 2018-05-17 | 2018-10-19 | 宁波工程学院 | Workpiece coating uniformity detection method based on jet stream |
| CN109755159A (en) * | 2018-12-29 | 2019-05-14 | 武汉华星光电技术有限公司 | Dry etching board and dry etching method |
| CN110060945A (en) * | 2019-04-26 | 2019-07-26 | 德淮半导体有限公司 | Etching groove, the method and etching system for conveying etching liquid |
| CN110634771A (en) * | 2019-08-26 | 2019-12-31 | 石狮市玛哗贸易有限公司 | Wafer etching equipment |
| CN112635389A (en) * | 2020-12-28 | 2021-04-09 | 芯思杰技术(深圳)股份有限公司 | Etching jig, etching device and etching method |
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| US5772764A (en) * | 1995-10-13 | 1998-06-30 | Tokyo Electron Limited | Coating apparatus |
| JPH11265846A (en) * | 1998-03-17 | 1999-09-28 | Dainippon Screen Mfg Co Ltd | Substrate treating device |
| CN1636267A (en) * | 2001-12-21 | 2005-07-06 | 纳托尔公司 | Electrochemical edge and bevel cleaning process and system |
| CN1876243A (en) * | 2005-06-10 | 2006-12-13 | 株式会社半导体能源研究所 | Chemical solution application apparatus and chemical solution application method |
| CN101055417B (en) * | 2006-04-12 | 2011-01-12 | 中芯国际集成电路制造(上海)有限公司 | Sprinkler device |
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2012
- 2012-04-01 CN CN2012100985076A patent/CN102623323A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5772764A (en) * | 1995-10-13 | 1998-06-30 | Tokyo Electron Limited | Coating apparatus |
| JPH11265846A (en) * | 1998-03-17 | 1999-09-28 | Dainippon Screen Mfg Co Ltd | Substrate treating device |
| CN1636267A (en) * | 2001-12-21 | 2005-07-06 | 纳托尔公司 | Electrochemical edge and bevel cleaning process and system |
| CN1876243A (en) * | 2005-06-10 | 2006-12-13 | 株式会社半导体能源研究所 | Chemical solution application apparatus and chemical solution application method |
| CN101055417B (en) * | 2006-04-12 | 2011-01-12 | 中芯国际集成电路制造(上海)有限公司 | Sprinkler device |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103219232A (en) * | 2013-03-15 | 2013-07-24 | 上海华力微电子有限公司 | Wet etching machine table device |
| CN106711279A (en) * | 2016-11-29 | 2017-05-24 | 梁结平 | Solar cell panel electrode removing device and method |
| CN106784142A (en) * | 2016-12-16 | 2017-05-31 | 成都佰思汇信科技有限责任公司 | Solar battery slice etching device and method |
| CN108680575A (en) * | 2018-05-17 | 2018-10-19 | 宁波工程学院 | Workpiece coating uniformity detection method based on jet stream |
| CN109755159A (en) * | 2018-12-29 | 2019-05-14 | 武汉华星光电技术有限公司 | Dry etching board and dry etching method |
| CN109755159B (en) * | 2018-12-29 | 2021-02-02 | 武汉华星光电技术有限公司 | Dry etching machine and dry etching method |
| CN110060945A (en) * | 2019-04-26 | 2019-07-26 | 德淮半导体有限公司 | Etching groove, the method and etching system for conveying etching liquid |
| CN110634771A (en) * | 2019-08-26 | 2019-12-31 | 石狮市玛哗贸易有限公司 | Wafer etching equipment |
| CN110634771B (en) * | 2019-08-26 | 2021-09-21 | 深圳市中科光芯半导体科技有限公司 | Wafer etching equipment |
| CN112635389A (en) * | 2020-12-28 | 2021-04-09 | 芯思杰技术(深圳)股份有限公司 | Etching jig, etching device and etching method |
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Application publication date: 20120801 |