CN102610493B - A kind ofly remove the method that amorphous c film recycles silicon chip - Google Patents
A kind ofly remove the method that amorphous c film recycles silicon chip Download PDFInfo
- Publication number
- CN102610493B CN102610493B CN201210077702.0A CN201210077702A CN102610493B CN 102610493 B CN102610493 B CN 102610493B CN 201210077702 A CN201210077702 A CN 201210077702A CN 102610493 B CN102610493 B CN 102610493B
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- amorphous
- recycles
- cineration technics
- remove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Silicon Compounds (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to field of semiconductor manufacture, particularly relate to and a kind ofly remove the method that amorphous c film recycles silicon chip.The present invention proposes a kind ofly to remove the method that amorphous c film recycles silicon chip, produces plasma or ozone generator produces active O by adopting remote system
+carry out cineration technics, not only can reach the same efficiency removing agraphitic carbon, and less to the ion dam age of silicon chip surface, thus improve the cyclic utilization rate of silicon chip.
Description
Technical field
The present invention relates to the manufacture field of SIC (semiconductor integrated circuit), particularly relate to and a kind ofly remove the method that amorphous c film recycles silicon chip.
Background technology
At present, about the technique removing agraphitic carbon (amorphous carbon) thin layer, the usual way of industry is that employing and photoresistance remove identical process conditions and cineration technics, and then utilizes wet method to remove the polymkeric substance (polymer) on surface and the oxide layer of previous process generation.
Fig. 1 is the conventional process structure schematic diagram removing agraphitic carbon in background technology of the present invention, and Fig. 2 is the conventional process flow diagram removing agraphitic carbon in background technology of the present invention; As shown in Figure 1-2, in reaction chamber 13, cineration technics adopts O usually
2in-situ plasma O is produced in reaction chamber
+, and the O of activity
+react with agraphitic carbon and generate volatile gas as CO, CO
2deng, thus remove the amorphous carbon layer 12 on silicon chip 11 surface, and then utilize wet processing to remove the oxide generated in residual polymer and cineration technics; Adopt above-mentioned technique, can make silicon chip 11 to produce more ion dam age (damage), cause the cyclic utilization rate of silicon chip lower.
Summary of the invention
The invention discloses and a kind ofly remove the method that amorphous c film recycles silicon chip, it is characterized in that, comprise the following steps:
Step S1: in reaction chamber, adopts remote system to produce plasma or ozone generator produces active O
+carry out cineration technics, to remove amorphous carbon layer on silicon chip;
Step S2: remove remaining polymkeric substance and oxide layer.
Above-mentioned removal amorphous c film recycles the method for silicon chip, it is characterized in that, is also included in described reaction chamber and passes into oxygen.
Above-mentioned removal amorphous c film recycles the method for silicon chip, it is characterized in that, the flow of described oxygen is 1000-10000sccm.
Above-mentioned removal amorphous c film recycles the method for silicon chip, it is characterized in that, adopts wet processing to remove except remaining polymkeric substance and oxide layer.
Above-mentioned removal amorphous c film recycles the method for silicon chip, it is characterized in that, the temperature in described reaction chamber is 300-500 DEG C.
Above-mentioned removal amorphous c film recycles the method for silicon chip, it is characterized in that, the pressure in described reaction chamber is 1-10Torr.
Above-mentioned removal amorphous c film recycles the method for silicon chip, it is characterized in that, the reaction time of described cineration technics is 0-600s.
Above-mentioned removal amorphous c film recycles the method for silicon chip, it is characterized in that, when adopting remote system generation plasma to carry out cineration technics, its RF power is 50-3000W.
Above-mentioned removal amorphous c film recycles the method for silicon chip, it is characterized in that, employing remote system generation plasma carries out the O in cineration technics
2flow be 1000-20000sccm.
Above-mentioned removal amorphous c film recycles the method for silicon chip, it is characterized in that, adopts ozone generator to produce active O
+when carrying out cineration technics, its O
2flow be 1000-20000sccm.
In sum, owing to have employed technique scheme, the present invention proposes a kind ofly to remove the method that amorphous c film recycles silicon chip, produces plasma or ozone generator produces active O by adopting remote system
+carry out cineration technics, not only can reach the same efficiency removing agraphitic carbon, and less to the ion dam age of silicon chip surface, thus improve the cyclic utilization rate of silicon chip.
Accompanying drawing explanation
Fig. 1 is the conventional process structure schematic diagram removing agraphitic carbon in background technology of the present invention;
Fig. 2 is the conventional process flow diagram removing agraphitic carbon in background technology of the present invention;
Fig. 3 is that the present invention removes amorphous c film and recycles in the method for silicon chip and adopt remote system to produce plasma to carry out the structural representation of cineration technics;
Fig. 4 be the present invention remove amorphous c film recycle in the method for silicon chip adopt ozone generator produce O
+carry out the structural representation of cineration technics;
Fig. 5 is the process flow diagram that the present invention removes that amorphous c film recycles the method for silicon chip.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described:
Fig. 3 is that the present invention removes amorphous c film and recycles in the method for silicon chip and adopt remote system to produce plasma to carry out the structural representation of cineration technics; Fig. 5 is the process flow diagram that the present invention removes that amorphous c film recycles the method for silicon chip.
As shown in Figures 3 and 5, first, surface coverage had the silicon chip 21 of amorphous carbon layer (Amorphous Carbon) 22 to be placed in reaction chamber 23, and to adopt remote system 24 to produce plasma to this silicon chip 21 time of carrying out be the cineration technics of 0-600s, namely active O
+react with agraphitic carbon and generate volatile gas as CO, CO
2deng, thus remove the amorphous carbon layer 22 on silicon chip 21 surface, and then utilize wet processing to remove the oxide generated in residual polymer and cineration technics.
Wherein, passing into flow in reaction chamber 23 when carrying out cineration technics is the oxygen (O of 1000-10000sccm
2), and the temperature in reaction chamber 23 is 300-500 DEG C, pressure is 1-10Torr.
Further, the RF power of this remote system 24 is 50-3000W, O
2flow be 1000-20000sccm.
Fig. 4 be the present invention remove amorphous c film recycle in the method for silicon chip adopt ozone generator produce O
+carry out the structural representation of cineration technics; Fig. 5 is the process flow diagram that the present invention removes that amorphous c film recycles the method for silicon chip.
As shown in Figures 4 and 5, first, surface coverage there is the silicon chip 31 of amorphous carbon layer (Amorphous Carbon) 32 to be placed in reaction chamber 33, and adopt ozone generator 34 to produce active O
+be the cineration technics of 0-600s to this silicon chip 31 time of carrying out, namely active O
+react with agraphitic carbon and generate volatile gas as CO, CO
2deng, thus remove the amorphous carbon layer 32 on silicon chip 31 surface, and then utilize wet processing to remove the oxide generated in residual polymer and cineration technics.
Wherein, passing into flow in reaction chamber 33 when carrying out cineration technics is the oxygen (O of 1000-10000sccm
2), and the temperature in reaction chamber 33 is 300-500 DEG C, pressure is 1-10Torr.
Further, the O passed in this ozone generator 34
2flow be 1000-20000sccm.
In sum, owing to have employed technique scheme, the present invention proposes a kind ofly to remove the method that amorphous c film recycles silicon chip, produces plasma or ozone generator produces active O by adopting remote system
+carry out cineration technics, not only can reach the same efficiency removing agraphitic carbon, and less to the ion dam age of silicon chip surface, thus improve the cyclic utilization rate of silicon chip.
By illustrating and accompanying drawing, giving the exemplary embodiments of the ad hoc structure of embodiment, based on the present invention's spirit, also can do other conversion.Although foregoing invention proposes existing preferred embodiment, but these contents are not as limitation.
For a person skilled in the art, after reading above-mentioned explanation, various changes and modifications undoubtedly will be apparent.Therefore, appending claims should regard the whole change and correction of containing true intention of the present invention and scope as.In Claims scope, the scope of any and all equivalences and content, all should think and still belong to the intent and scope of the invention.
Claims (9)
1. remove the method that amorphous c film recycles silicon chip, it is characterized in that, comprise the following steps:
Step S1: in reaction chamber, the in-situ plasma adopting remote system to produce plasma or ozone generator generation activity carries out cineration technics, forms escaping gas to remove amorphous carbon layer on silicon chip in described cineration technics;
Step S2: remove the oxide skin(coating) generated in remaining polymkeric substance and surperficial cineration technics;
Wherein, wet processing is adopted to remove except remaining polymkeric substance and oxide layer.
2. removal amorphous c film according to claim 1 recycles the method for silicon chip, it is characterized in that, is also included in described reaction chamber and passes into oxygen.
3. removal amorphous c film according to claim 2 recycles the method for silicon chip, it is characterized in that, the flow of described oxygen is 1000-10000sccm.
4. removal amorphous c film according to claim 1 recycles the method for silicon chip, it is characterized in that, the temperature in described reaction chamber is 300-500 DEG C.
5. removal amorphous c film according to claim 1 recycles the method for silicon chip, it is characterized in that, the pressure in described reaction chamber is 1-10Torr.
6. removal amorphous c film according to claim 1 recycles the method for silicon chip, it is characterized in that, the reaction time of described cineration technics is 0-600s.
7. recycle the method for silicon chip according to the removal amorphous c film in claim 1-6 described in any one, it is characterized in that, when adopting remote system generation plasma to carry out cineration technics, its RF power is 50-3000W.
8. removal amorphous c film according to claim 7 recycles the method for silicon chip, it is characterized in that, employing remote system generation plasma carries out the O in cineration technics
2flow be 1000-20000sccm.
9. recycle the method for silicon chip according to the removal amorphous c film in claim 1-6 described in any one, it is characterized in that, when the in-situ plasma adopting ozone generator to produce activity carries out cineration technics, its O
2flow be 1000-20000sccm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210077702.0A CN102610493B (en) | 2012-03-22 | 2012-03-22 | A kind ofly remove the method that amorphous c film recycles silicon chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210077702.0A CN102610493B (en) | 2012-03-22 | 2012-03-22 | A kind ofly remove the method that amorphous c film recycles silicon chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102610493A CN102610493A (en) | 2012-07-25 |
| CN102610493B true CN102610493B (en) | 2015-08-26 |
Family
ID=46527785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210077702.0A Active CN102610493B (en) | 2012-03-22 | 2012-03-22 | A kind ofly remove the method that amorphous c film recycles silicon chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102610493B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104956476B (en) * | 2013-11-06 | 2017-11-14 | 马特森技术有限公司 | New mask minimizing technology strategy for vertical nand device |
| CN103646915A (en) * | 2013-11-28 | 2014-03-19 | 上海华力微电子有限公司 | A method for removing a C element in a SiCN thin film and a cyclic regeneration processing technique of a monitoring sheet containing the SiCN thin film |
| CN114999912A (en) * | 2022-05-24 | 2022-09-02 | 长鑫存储技术有限公司 | Semiconductor structure and forming method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1633701A (en) * | 2001-02-12 | 2005-06-29 | 兰姆研究有限公司 | Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications |
| CN101319354A (en) * | 2008-06-27 | 2008-12-10 | 浙江大学 | A kind of purification method of single-walled carbon nanotube film |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3848248B2 (en) * | 2002-12-17 | 2006-11-22 | 株式会社東芝 | SRAM cell and memory integrated circuit using the same |
-
2012
- 2012-03-22 CN CN201210077702.0A patent/CN102610493B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1633701A (en) * | 2001-02-12 | 2005-06-29 | 兰姆研究有限公司 | Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications |
| CN101319354A (en) * | 2008-06-27 | 2008-12-10 | 浙江大学 | A kind of purification method of single-walled carbon nanotube film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102610493A (en) | 2012-07-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102610493B (en) | A kind ofly remove the method that amorphous c film recycles silicon chip | |
| JP2013149604A5 (en) | Negative electrode for secondary battery and method for producing the same | |
| KR20110031863A (en) | Method for producing graphene, graphene obtained by the production method, conductive thin film containing the graphene, transparent electrode, heat dissipation or heating element | |
| WO2010081505A3 (en) | Solar cell and method for producing a solar cell from a silicon substrate | |
| PH12013500220A1 (en) | Aqueous acidic solution and etching solution and method for texturizing the surface of single crystal and polycrystal silicon substrates | |
| CN107868959A (en) | A kind of lithographic method for increasing foam nickel electrode electrochemical surface area | |
| CN106207201B (en) | A reduced graphene oxide/graphene foam composite with gradient distribution of oxygen-containing functional groups and its application in vanadium batteries | |
| WO2014123331A8 (en) | Method for continuously preparing silicon nanoparticles, and anode active material for lithium secondary battery comprising same | |
| CN102420100B (en) | Method for clearing memory effect of etching cavity | |
| CN107394009A (en) | A wet etching method, a double-sided solar cell and a manufacturing method thereof | |
| CN103534383A (en) | Thin film forming device | |
| CN104465879B (en) | A kind of passivation on double surfaces method of solar cell | |
| CN103632939A (en) | Method for optimizing top rounded corner of power device groove | |
| CN104393027B (en) | A kind of all-carbon graphene device and preparation method thereof | |
| CN111589457A (en) | Photocatalytic material, preparation method and application for in-situ growth of three-dimensional copper sulfide on copper mesh | |
| CN105932097A (en) | Silicon chip oxidation method | |
| CN104810384A (en) | Power semiconductor device and manufacture method thereof and cut-off ring | |
| CN102544234B (en) | A kind of heat treatment method of heterojunction crystal silicon solar battery passivation layer | |
| CN102361007A (en) | Method for etching groove and semiconductor device | |
| CN108364844A (en) | A kind of vertical structure method of roughening | |
| JP2014116488A (en) | Resistivity measurement method of n type silicon epitaxial layer | |
| JP6109939B2 (en) | Manufacturing method of solar cell | |
| CN105304751B (en) | A kind of heterojunction solar battery and preparation method thereof, surface passivation method | |
| CN103531440B (en) | A kind of surface repairing method of wafer rear | |
| CN104345581A (en) | Method for removing photoresist from plasma |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |